DFT in practice

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    Plane wave expansion & the Brillouin zone integration

    DFT in practice : Part Iplane wave expansion & the Brillouin zone integration

    Ersen Mete

    Department of PhysicsBalkesir University, Balkesir - Turkey

    August 13, 2009 - NanoDFT09, Izmir Institute of Technology, Izmir

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    Plane wave expansion & the Brillouin zone integration

    Outline

    Plane wave expansion

    Kohn-Sham equations for periodic systems

    Potential terms in plane waves

    Brillouin zone integration

    k-point sampling & Monkhorst-Pack grid

    Integration in irreducible Brillouin zone

    Smearing methods

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    Plane wave expansion & the Brillouin zone integration

    Kohn-Sham equations to be solved self-consistently

    122 + Veff(r)i(r) = ii(r)

    Veff(r) = ext(r) +

    dr

    n(r )|r r|

    Hartree potential+

    EXC[n]

    n(r)

    Exchangecorrelationpotentialn(r) =

    i

    |i(r)|2

    If the exchange-correlation functional is exact the total energy and the

    density will be exact.

    However, Kohn-sham single particle wavefunctions and eigenenergies donot correspond to any exact physical value.

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    Plane wave expansion & the Brillouin zone integration

    Self-consistent Kohn-Sham loop

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    Pl i & h B ill i i i

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    Plane wave expansion & the Brillouin zone integration

    Basis set representation of Kohn-Sham orbitals

    Atomic Orbitals (AO)

    (r) = (r)Ym (, ) where (r) =

    er

    2

    Gaussianer Slater

    molecular structures : slightly distorted atoms

    small basis sets can give good results

    easy to represent vacuum regions

    basis functions are attached to nuclear positions

    non-orthogonal basis set superposition errors (BSSE)

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    Plane a e e pansion & the Brillo in one integration

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    Plane wave expansion & the Brillouin zone integration

    Basis set representation of Kohn-Sham orbitals

    Plane waves

    k(r) = eikr

    orthogonal

    periodic (solids) (finite systems) = PBC with supercell approach

    practical for Fourier transfom and computation of matrix elements

    atomic wave functions require large number of plane waves

    nonlocalized = inefficient for parallelization

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    Plane wave expansion & the Brillouin zone integration

    Bravais lattice, primitive cell & Brillouin zone

    Direct lattice : a = a1,a2,a3Reciprocal lattice derives from confinementand Fourier analysis of periodic functions :

    eibiaj = ij = bi aj = 2 (=integer)

    Reciprocal latt. : b = 2(

    a)1 =

    b1, b2,b3Cell volume : cell = det(a)

    BZ volume : BZ = det(b) = (2)3/cell

    Direct lattice vectors : T(n1, n2, n3) = n1a1 + n2a2 + n3a3 TnReciprocal latt. vectors : G(m1,m2,m3) = m1b1 + m2b2 + m3b3 Gm

    1st BZ (Wigner-Seitz cell) : boundaries are the bisecting planes of Gvectors where Bragg scattering occurs.

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    Plane wave expansion & the Brillouin zone integration

    Born-von Karman supercell approach

    point defect slab molecule

    i,k(r + Njaj) = i,k(r)

    Supercell must be sufficiently large to maintain isolation.

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    Plane wave expansion & the Brillouin zone integration

    Plane wave expansion of the single particle wavefunctions

    Blochs theorem

    For a periodic Hamiltonian :

    i,k(r) = e

    ikr 1Ncell

    ui,k(r)

    i,k(r +aj) = eikaj

    i,k(r))

    where k is in the first BZ and periodic ui,k(r) can be expanded in aFourier series :

    ui,k(r) =

    1cell

    m

    ci,m(k)eiGmr

    u

    i,k(r +aj) = ui,k(r))

    Equivalently,

    i,k(r) =

    m

    ci,m1

    ei(k+Gm )r

    q

    ci,q|q (q = k+ Gm)

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    p g

    Fourier representation of the Kohn-Sham equations

    For a crystal,

    Implications of Bloch states

    i,k is a superposition of PWs with q wavevectors which differ by

    Gm to maintain the PBC.

    k is well-defined crystal momentum which is conserved.

    Potential has the lattice periodicity as ui,k(r).

    Veff(r) =

    m

    Veff(Gm)eiGmr

    Only Gm vectors are allowed in the Fourier expansion.The non-zero matrix elements are,

    q|Veff|q =

    mV(Gm)q|eiGmr|q =

    mVeff(Gm)qq,Gm

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    p g

    Substituting these Bloch states into the Kohn-Sham equations,multiplying by q| from the left and integrating over r gives a set ofmatrix equations for any given k.

    drq|

    1

    22 + Veff(r)

    q

    ci,m|q = iq

    ci,m|q

    m

    1

    2|k+ Gm|2m,m + Veff(Gm Gm)

    ci,m = ici,m

    Matrix diagonalization needed, but still easier to solve.

    Eigenvectors and eigenenergies for each k are independent in the 1stBZ.

    In the large = Ncellcell limit, k points become a dense continuumand i(k) become continuous bands.

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    Hartree potential in plane waves

    VH(G) =1

    cell dr ei

    Gr

    dr

    G n(

    G)eiGr

    |r

    r

    |

    =1

    cell

    G

    n(G)

    dr ei(GG)r

    du

    eiGu

    |u|

    =1

    cell G

    n(G)cellG,G2 011 e

    iGucos

    u u2d(cos )du

    = 2n(G)

    0

    eiGu eiGuiG

    du = 4n(G)

    G

    0

    sin(Gu)du

    = 4n(G)

    Glim0

    0

    eu sin(Gu)du

    = 4n(G)

    Glim0

    G

    2 + G2= 4

    n(G)

    G2(G = 0)

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    Exchange-correlation potential in plane waves

    VXC(G) =1

    cell dr eiGr

    nn(r)xc([n],r)=

    1

    cell

    dr ei

    Gr

    G

    xc([n],G)ei

    Gr +G,G

    n(G)eiGrxc([n],G

    )n

    eiGr

    =

    1

    cell

    G

    xc([n],G)

    dr ei(GG)r+

    G,G

    n(G)xc([n],G

    )n

    dr ei(

    GG+G)r

    =

    1

    cell G

    xc([n],G)cellG,G +

    G,Gn(G)

    xc([n],G)

    n cellG,GG= xc([n],G) +

    G

    n(G G)xc([n],G)

    n

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    Fourier representation ofEH and EXC terms

    By similar arguments,

    EH =

    1

    2 dr dr n(r)n(r)

    |rr| = 2cellG=0

    n(G)2

    G2

    EXC =

    dr n(r)xc(r) = cell

    Gn(G)xc(G)

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    External potential in terms of structure and form factors

    Ionic potential as a superposition of isolated atomic potentials

    ext(r) =nsp=1

    nj=1

    T

    V(r ,j T)

    nsp species, n atoms at ,j for , the set of translation vectors T

    Vext(G) =1

    drext(r)eiGr =

    1

    nsp=1

    nj=1

    duV(u)eiG(u+,j)

    T

    eiGT

    Ncell

    =

    1

    cell

    nsp

    =1

    duV(u)eiGu V(G)

    n

    j=1

    eiG

    ,j

    S(G)

    nsp

    =1

    cell S

    (G)V

    (G)

    This form is particularly useful when V(r) = V(|r|)!

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    Form factor for a spherically symmetric ionic potential

    V(G) =1

    0

    11

    20

    V(r)eiGrr2 d d(cos ) dr

    =2

    V(r)

    eiGr(cos )

    iGr 1

    -1

    r2 dr

    =2

    0

    eiGr e-iGriGr

    r2 dr

    =

    4

    0 j0(|G|r)V(r)r2dr= V(|G|)

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    Cutoff : finite basis set

    Computationally, a complete expansion in terms of infinitely many plane

    waves is not possible.The coefficients, cm(k), for the lowest orbitals decrease exponentially

    with increasing PW kinetic energy (k+ Gm)2/2.

    A cutoff energy value, Ecut,

    determines the number of PWs (Npw)

    in the expansion, satisfying,

    (k+ Gm)2

    2 < Ecut (PW sphere)

    Npw is a discontinuous function of the PW kinetic energy cutoff.

    Basis set size depends only on the computational cell size and the cutoffenergy value.

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    Electron density in the plane wave basis

    n(r) =1

    Nk

    occk,i

    ni,k(r) where ni,k(r) = |i,k(r)|2

    Then, in terms of Bloch states,

    ni,k(r) =

    1

    m,m

    ci,m(k)ci,m(k)ei(GmGm)r

    and

    ni,G(r) = 1 m

    ci,m(k)ci,m(k)

    where Gm = Gm + G = sphere of n(G) has a double radius.

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    Brillouin zone integration

    Properties like the electron density, total energy, etc. can be evaluated by

    intergration over k inside the BZ.

    for the ith band of a function fi(k)

    1

    BZ BZdk fi(k) = fi = 1

    Nk kfi(k)

    Example :

    a 2D square lattice

    25 k-points in the BZ

    fi = fi(k1) + . . . + fi(k25)

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    k-point sampling : uniform vs non-uniform

    Moreno and Soler [Phys.Rev.B 45,24] :

    A mesh with uniformly distributedk-points is preferred.

    Example : A rectangular lattice

    They have nearly the same number ofk-points.

    (a) : Isotropic sampling

    (b) : finer sampling vertically

    poor sampling horizontally

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    M kh P k id

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    Monkhorst-Pack grid

    A uniform mesh ofk-points can be generated by Monkhorst-Pack

    procedure

    kn1,n2,n3 =

    31

    2ni Ni 12Ni

    Gi

    where Ni is the number ofk-points in each direction and ni = 1, . . . ,Ni.

    Example : 441 MP grid for 2D square lattice

    G1 = b1 =a

    kx, G2 = b2 =a

    ky, G3 = 0

    k1,1 = -38 , -38 k1,3 = -38 , 18k1,2 =

    -38 ,

    -18

    k1,4 =

    -38 ,

    38

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    Plane wave expansion & the Brillouin zone integration

    Ti l

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    Time-reversal symmetry

    Kramers theorem

    Let the hamiltonian, H, be invariant under time-reversal,THT1 = H (in the absence of magnetic fields!)

    then H =

    TH = HT = T

    T (r,t) is also a solution of the same Schrodinger equation withthe same eigenvalue.

    The solutions and T are orthogonal, |T = 0

    Bloch states, i,-k and

    i,k

    satisfy the condition (r + Tn) = eikTn(r)

    = i,-k = i,k

    Kramers theorem implies inversion symmetry in the reciprocal space!

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    L tti t d th I d ibl B ill i Z

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    Lattice symmetry and the Irreducible Brillouin Zone

    We use symmetry of the Bravais lattice to reduce the calculation to a

    summation over k inside the IBZ.

    Example : IBZ of the 2D square lattice

    Special k-points :

    (0, 0) : full symmetry of the point group.X 12 , 0 : E, C2, x, yM

    12 ,

    12

    : full symmetry of the point group.

    Then, we can unfold the IBZ by the symmetry operations to get thesolution for the full BZ.

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    P t

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    Preserve symmetry

    Example : Hexagonal cell

    Shift thek-point mesh to preserve hexagonal symmetry!

    In this case, even meshes break the symmetry

    A mesh centered on preserves the symmetry.

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    Integration in the IBZ

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    Integration in the IBZ

    Generate a uniform mesh in reciprocal space

    Shift the mesh if required

    Employ all symmetry operations of the Bravais lattice to each of thek-points

    Select the k-points which fall into the IBZ

    Calculate weights, k, for each of the selectedk-points

    k =number of symmetry connected k-points

    total number ofk-points in the BZ

    IBZ integration is then given by

    fi =IBZk

    kfi(k)

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    Example : 441 MP grid for 2D square lattice

    441 MP grid = 16 k-points in the BZ

    4 equivalent k4,4 =

    38 ,

    38

    = wk = 14

    4 equivalentk3,3 = 18 , 38 = wk = 14

    8 equivalent k4,3 =

    38 ,

    18

    = wk = 12

    Then, the BZ integration reduces to,

    fi =14 fi(

    k4,4) +14 fi(

    k3,3) +12 fi(

    k4,3)

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    Smearing methods : fractional occupation numbers

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    Smearing methods : fractional occupation numbers

    Fermi level : the energy of the highest occupied band.

    IBZ integration over the filled states : fi =IBZk

    kfi(k)(i(k) F)

    For insulators and semiconductors, DOS goes to zero smoothly before the gap.

    For metals, the resolution of the step function at the Fermi level is very difficult

    in plane waves.

    Trick is to replace sharp (i(k) F) function with a smootherf(

    {i(k)

    }) function allowing partial occupancies at the Fermi level.

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    Fermi Dirac smearing

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    Fermi-Dirac smearing

    In order to overcome the discontinuity of the functions at the Fermi level,

    f{i(k)} = 1e(i(k)F)/ + 1

    where = kBT

    T 0 : Fermi-Dirac distribution approaches to the step function.

    Finite temperature T introduces entropy to the system of non-interactingparticles,

    S(f) = [f ln f + (1 f)ln(1 f)]and the Free energy is given by,

    F = E i

    S(fi)

    Drawback : reduced occupancies below F are not compensated newoccupancies above F.

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    Gaussian smearing

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    Gaussian smearing

    An approximate step function is obtained by integration of aGaussian-approximated delta function.

    f{(ik

    )} = 12

    1 erf

    ik F

    Smearing parameter, , has no physical interpretation.

    Entropy and the free energy cannot be written in terms of f.

    S F

    = 12

    exp F

    2

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    Method of Methfessel-Paxton

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    Method of Methfessel-Paxton

    To overcome the drawback introduced by the Fermi-Dirac smearing,

    Expand the step function in a complete set of orthogonal Hermitefunctions. (Hermite polynomials multiplied by Gaussians)

    (x) DN =N

    nAnH2ne

    x2 (H2n : (x) is even)

    (x) SN = 1

    DN(t)dt

    S0 =1

    2(1 erf(x)) (Gaussian smearing)

    SN = S0(x) +

    Nn=1

    AnH2n1(x)ex2

    Yields negative occupation numbers!

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    Marzari-Vanderbilt : cold smearing

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    Marzari Vanderbilt : cold smearing

    Amends the negative occupation numbers introduced byMethfessel-Paxton.

    The delta function is approximated by a Gaussian multiplied by a firstorder polynomial,

    (x) =1

    e[x(1/

    2]2 (2

    2x)

    where

    x =

    ik

    F

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    Linear tetrahedron method

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    Linear tetrahedron method

    Divide the BZ into tetrahedra

    Interpolate the function Xiwithin these tetrahedra

    Integrate the interpolated functionto obtain Xi

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