Development of novel Silicon detectors for next generation nuclear physics experiments

(SIDET)

O. KiselevUniversity of Mainz

JRA21/JRA22

Integrated E – E detectors

New technological process – Quasi-Selective Epitaxy

E-E scatter plots obtained after irradiation by heavy ions and alpha particles

Novel double-sided monolithic E-E detector

Potential applications – GANIL, LNL Legnaro, LNS Catania, GSI

Membrane-like E detectors

Anodic dissolution of large area n – n+ epitaxial oxidated structures

Potential applications – GANIL, LNL Legnaro, LNS Catania, GSI

Very thin strip detectors produced by new technology - Planar Process Partially Performed on Thin Silicon Membrane (PPPP process)

Passivated 52 µm thick transmissionE strip detector

Sub-segmented strip detectors

2D position sensitivity on one side (like pixel detectors)Same number and type of readout channels as strip detectors30 - 50 µm position resolution is possibleLarge pads on back side for timing/triggerThin dead layer on front side – low energy threshold Spectroscopy

Potential applications – any nuclear physics experiment, medicine, safety

Absolutely novel technique!

Thick Si calorimeters

Very good energy resolution High efficiency Low noise

Thick (7-10 mm) Li drifted Si detectors (SiLi)

Very expensive Very long and complicated production

process Almost no producers in the world

Thick (≥3 mm) Si PIN detectors

Very good energy resolution High efficiency Low noise Simple and fast production Any active area possible Low price Need an R&D on voltage termination

at the detector periphery Careful choice of the Si wafers

Potential applications – GANIL, LNL Legnaro, LNS Catania, GSI

Particle and ion ID Spectroscopy Position measurement Self-triggering, TOF measurement

Integrated E-E detector

Summary of JRA activityMembrane-like strip detector

Sub-segmented strip detector

Thick Si calorimeters

Merging potential with some other JRAs – dialog is going on

Substantial improvement

Full advanced telescope for charged particle detection

Institute of Electronic Materials Technology and Uni Warsaw;CCLRC Daresbury Laboratory; GSI Darmstadt, University of Mainz,Helsinki Institute of Technology; University of Huelva; CEA Saclay, GANIL, Caen; Mid-Sweden University, Uppsala University; INFN LNL, Legnaro, INFN LNS, Catania; LPSC Grenoble, France; associated partners PTI, St. Petersburg; RIMST, Zelenograd; BNL, Brookhaven

Substantial support in many institutes will be available

Partners: