Detectors and Analog Electronics · 2005-09-22 · Detectors and Analog Electronics Bill Crain The Aerospace Corporation 310-336-8530 ... Noise Model (1) Reference: Helmuth Spieler

Cosmic RAy Telescope for the Effects of RadiationBill Crain, PDR Slide 1 28 September 2005

Detectors and Analog Electronics

Bill Crain

The Aerospace Corporation

310-336-8530

[email protected]


Introduction

• Design Overview

• Requirements Flowdown

• Detector Specification

• Signals, Noise, and Processing

• Board Descriptions

• Interface Diagram

• Power Consumption

• Trade Studies

• Summary


Detector Electronics Design Overview

• Electronic Board Designs– Telescope Board

– Analog Processing Board (APB) in E-box

• Heritage approach from Polar CEPPAD/IPS unchanged fromproposal– Linear pulse processing system with Amptek front-end

– Circuits designed specifically for CRaTER requirements

• Functional requirements summary– Measure LET of high LET particles in thin detectors

– Measure LET of low LET particles in thick detectors

– Provide good resolution for TEP effects

– Robust to temperature drift and environments


Thin

Thick

Thin

Thick

Thin

Thick

Preamps

Bias Networks

Thermistor

Telescope Board Analog Processing Board

Shaping

Scaling

BaselineRestorer

TimingTrigger

Detector Boards

ToDigitalBoard

Functional Block Diagram


Analog Signal Flow Diagram

• Single fixed gain, linear transfer function

• All detector channels use same topology

Analog PulseSignals

dv/dt &Pole-Zero

Cancellation

ShapingAmp

Amp

BaselineRestorer

Preamp

TimingDiscrim.

SiliconDetector

BiasNetwork

TestPulser

ScalingAmp

Digital TimingSignals


Requirements Traceability

Preamp, bias network,baseline restorer

CRaTER-L3-01

CRaTER-L2-08

0.1%0.1%Stability / drift

Preamp, shaping ampCRaTER-L2-080.1%0.1%Integral non-linearity

Test pulserCRaTER-L3-08256:1256:1Internal Calibration

Shaping time, preamptime constant

CRaTER-L3-10 1.25 kHz 1.25 kHzMax. Singles Rate

Preamp, shaping time,thermal

CRaTER-L3-01

CRaTER-L2-08

< 40 keV< 400 keVNoise (rms)

Gain, baseline restorer,shaping time

CRaTER-L3-01200 keV

<130 keV

2 MeV

<1.3 MeV

Low E Threshold

Timing Threshold

Preamp range, closed-loop stability

CRaTER-L3-01100 MeV1 GeVMax. Energy Deposit

Board sizesCRaTER-L3-0133Amplifier strings

AffectivityParent Req.Thick Det.Thin Det.Electronics Req.


Detector Specification (1)

• Document 32-05001 released rev 02 August 1, 2005

• Micron Semiconductor Limited– Lancing Sussex, UK

• 20 years experience in supplying detectors for space physics– CEPPAD, CRRES, WIND, CLUSTER, ACE, IMAGE, STEREO,

and more…

• Detector Type– Ion-implanted doping to form P+ junction on N-type silicon

– Very stable technology

– Advantages to science include good carrier lifetime, stable toenvironmental conditions, and thin entrance windows


Detector Specification (2)• Circular detectors having active area of 9.6 cm2

• Two different detector thicknesses: thin and thick– note: state-of-the-art is 20um for thin and 2,000um for thick detectors

• Guard ring on P-side to improve surface uniformity• Very thin dead layers (windows) reduce energy loss, lower series

resistance, and reduce noise

Gd/FP P+ Contact Grid Gd/FP

Active Volume(depletion region)

P+ implant window

N window

0.1 um

0.1 um

Thickness140 um thin;1,000 um thick

ActiveDimension

(35mm)

N contact

E-field

~ 1mm


Detector Specification (3)

• Detector drawings (Micron)– Note: this is not the present mount design

Guard ring

Al. contact gridreduces surfaceresistivity

Al. contactplane


Detector Design Requirements Summary

Requirement Specification

Active area 9.6 cm2 circular

Active dimension 35 mm

Active dimension tolerance +/- 0.1 mm

Thickness Thin = 140 um, Thick = 1000 um

Thickness tolerance +/- 10 um

Thickness uniformity +/- 10 um

Window 0.1 um ohmic, 0.1 um junction

Metalization Ohmic surface and junction grid 3000 Å +/- 1000 Å

Full depletion (FD) Thin = 20 – 40V, Thick = 150 – 200V

Operating voltage max Thin = 2 x FD, Thick = FD + 30V

Capacitance Thin = 700 pF, Thick = 100 pF

Leakage current max (20C) Thin = 300 nA junction, 200 nA guardThick = 1,000 nA junction, 700 nA guard

Drift (max leakage @ 40C) 6 x Ileak @ 20C

Stability 1% Ileak @ 40C for 168 hours

Alpha resolution Thin = 45 KeV, Thick = 35 KeV FWHM


Detector Specification (4)• ISO9001

– Full traceability and serialization

– Travelers maintained

• Qualification tests prior to flight detector shipment– Bond pull test

– Random vibration test

– Thermal cycling

– Stability

• Verification matrix specifies test criteria– Leakage current

– Capacitance

– I-V characteristic

– Alpha resolution / pulser noise measurement


DetectorVerification

MatrixEye Chart

From 32-05001 Rev 02


Proton Energy Deposition Simulations Reference:M. Looper

Thin 150MeV incident E Thick 150MeV incident E

Thin 1000MeV incident E Thick 1000MeV incident E1 GeV Protons

1

10

100

1000

10000

0.01 0.1 1 10 100

Deposited Energy (MeV)

Eve

nts

Detector 2

Detector 4

Detector 5

20,000 incident protonsThick detectors (1000 um)

1 GeV Protons

1

10

100

1000

10000

0.01 0.1 1 10 100


Eve

nts

Detector 1

Detector 3

Detector 6

20,000 incident protonsThin detectors (140 um)

150 MeV Protons

1

10

100

1000

10000

0.01 0.1 1 10 100


Eve

nts

Detector 2

Detector 4

Detector 5

20,000 incident protonsThick detectors (1000 um)

150 MeV Protons

1

10

100

1000

10000

0.01 0.1 1 10 100


Even

ts

Detector 1

Detector 3

Detector 6

20,000 incident protonsThin detectors (140 um)

Nom

inal

Thr

esho

ld

Nom

inal

Thr

esho

ld

GEANT4


Iron Energy Deposition Simulation

Reference:J.B. Blake


Signal Characteristics

100 pF

700 pF

Detector

Capacitance

1.5 pF38 nsec e-drift

115 nsec h-drift

27.5E6 e-hpairs

(4.4 pC)

55E3 e-h pairs

(8.8 fC)

Thick

15 pF3 nsec e-drift

9 nsec h-drift

275E6 e-hpairs

(44 pC)

555E3 e-hpairs

(88 fC)

Thin

Feedback

Capacitance

CollectionTime

Max SignalMin SignalDetector

q_nNe(t)E q_pNh(t)E

PreAmp

Cdet

CFB

RFB

CFB (Ao) >> Cdet

AoVpk = Qtot/CFB


Signal Processing (1)

• Combined dynamic range of thin/thick pair is 5,000

• Thin threshold to provide overlap with thick range

• Thin Detector Signal– Preamp input stage designed for 97% charge collection

• High gain input jFET for large dynamic input capacitance

• 4% drift in operating point will result in 0.1% in output peak

– Large feedback capacitance needed to handle Fe deposit• Preamp compensation to maintain closed-loop stability

• Thick Detector Signal– Not as sensitive to detector capacitance

– Designed for low noise to maintain reliable 200 KeV low thresholdand meet resolution requirement


Noise Model (1)

Reference:Helmuth SpielerIFCA Instrumentation Course Notes2001

Thick

Thin

Detector

100 pF Det

10 pF jFET+stray

700 pF Det.

160 pF jFET+stray

InputCapacitance

1000 nA @ 20C

4000 nA @ 35C

200 nA @ 20C

800 nA @ 35C

LeakageCurrent

6 Meg ohms

6 Meg ohms

ShuntResistance

100 ohms

100 ohms

SeriesResistance

2.0 nV/√Hz

0.6 nV/√Hz

Preampnoise (ena)

+ input cap.

T=peaking timeF=shaping factors


Noise Model (2)


Noise Model (3)

20C BOL



• Noise dominated by thick detector leakage current

• Shaping time same for both thin and thick detectors– ~1 usec for comfortable PHA input timing

– 3-pole gaussian shaping improves symmetry

– 2-complex poles shortens tail

• Coincidence Timing– Noise occupancy in 1-usec coincidence window < 0.1%

– Threshold to noise ratio (T/N) ~ 3.2 for timing discriminator

– Timing discriminator threshold ~ 130 keV• Anticipated BOL T/N ratio is ~ 10

• Allows margin for leakage current drift up to 10 uA



• Other factors affecting noise performance– Bias resistor on thin detector sized to minimize voltage drop

– Bias resistor on thick detector sized to minimize noise

– Detector shot noise doubles every 8 C• Beneficial to operate cold; preferably below 20 C



• Pileup is rare due to low event rate and relatively shortshaping time– Exception: occasional periods of high ESP flux

• Coincidence timing uncertainty from leading edge triggeris small– Amplified timing discriminator reduces time walk to acceptable

10% uncertainty

• Ballistic deficit is not an issue due to short collectiontimes relative to peaking time of shaper

• Output voltage scaled for PHA input specifications


Telescope Board Details

• Thin/thick detector pair usesame design topology

• Signal collected on P-contact• Guard signal shunted to

ground• No guard leakage noise• AC coupling to isolate DC

detector leakage current• Low noise / high gain JFET

input stage (InterFET) withAmptek A250 hybrid

• MIL-STD-5510 polyimide 8-layer construction

BiasNetwork

Test Input&

Feedback Network

Negative Bias

Test Pulser

Signal

P-contactG G

N-contact

Active Volume

JFET

BiasNetwork

A250


Analog Processing Board Details

• Single board in E-box contains 3 thin and 3 thick detectorprocessing channels– Polyimide laminate, MIL-STD-55110, 8-layers, 0.062 in.

– Interfaces to digital board in same box

• Components– Linear Technology radiation tolerant opamps for shaping stages, BLR,

and comparators

– Analog Devices rad tolerant op-amp for test pulser interface and biasmonitoring (see trade study chart)

• Pole-zero cancellation circuit included to prevent undershoot


Analog Interface Block Diagram

• ICD 32-02052 rev 01

• +/- 6V power, 5V

• Thin and thick bias voltages

• Unipolar gaussian signalsinput to peak-hold circuits

• Low-level triggers forcoincidence timing

• Test pulser level andclocking signals

+/- 6V, 5V &Returns

Shaped Pulse AnalogSignals

Timing Digital Triggers

Test Pulser Level

Detector Bias &Returns

Temperatures

MIT

Test Pulser Trigger

3 thin, 3 thick

Analog Processing

Aerospace

Digital Processing & Power

3 thin, 3 thick

Power Supply

Pulse HeightAnalysisSystem

SpacecraftInterface


Power Estimate

Current Est. (mA) 10% Uncertainty Current Est. (mA) 10% Uncertainty

24-May-05 24-May-05 24-May-05 24-May-05

+6V Analog 27.000 29.700 61.800 67.980 88.800 97.680

-6V Analog 0.000 0.000 41.800 45.980 41.800 45.980

+5V Digital 0.000 0.000 1.000 1.100 1.000 1.100

-100V Thin Det Bias 0.030 0.033 0.000 0.000 0.030 0.033

-300V Thick Det Bias 0.075 0.083 0.000 0.000 0.075 0.083

Power Est. (mW) 10% Uncertainty Power Est. (mW) 10% Uncertainty Total Est. (mW) Total Max. (mW)

Total Load 187.5 206.25 626.6 689.26 814.1 895.51

Total Est. (mA) Total Max. (mA)Analog Processing Board

Power SourceDetector Boards (total for 3 boards)

Total estimated power dissipation is < 1 Watt


Trade Studies

• Considering detector bias current monitor– Housekeeping item to provide leakage current for each detector

– No impact on noise or failure modes

– Useful for diagnostic purposes especially during environmentaltesting of flight units


Summary

• Detectors are well-established technology from experiencedsupplier

• Detector specification and Analog/Digital ICD documentshave been released

• Electronics design meets requirements of instrumentrequirements document 32-01205


Documents

Detectors and Analog Electronics · 2005-09-22 · Detectors and Analog Electronics Bill Crain The Aerospace Corporation 310-336-8530 ... Noise Model (1) Reference: Helmuth Spieler