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Detector R&D . Cincinnati , FNAL, Hawaii, LBNL, Princeton, SLAC, VPI KEK, Nagoya , Niigata , Osaka , saga, Tohoku , Tokyo, TMU , Tsukuba. Contributions by US and JPN (recent 6 years). Cherenkov PID & advanced photon sensors High speed MCP PMT (SLAC, Nagoya) - PowerPoint PPT Presentation
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CINCINNATI, FNAL, HAWAII , LBNL, PRINCETON, SLAC, VPI
KEK, NAGOYA, NIIGATA, OSAKA ,SAGA, TOHOKU, TOKYO, TMU, TSUKUBA
Detector R&D
Contributions by US and JPN (recent 6 years)
Cherenkov PID & advanced photon sensors High speed MCP PMT (SLAC, Nagoya) Focusing DIRC prototype (SLAC, Cincinati) GaAs photocathode , TOP (Nagaoya) 144 ch HPD for RICH counter(Nagoya)
MPGD related technology GEM and MicroMEGAS for TPC read out (Saga,LBNL,KEK) Gas PMT with microMEGAS structure (TMU,SLAC)
Silicon detector technologies for thin trackers Development of light weight silicon strip ladder, high heat conducting readout
hybrid(Princeton) Continuous Acquisition Pixel (CAP) sensor(Hawaii) EMI from short bunch beam (Tohoku/KEK/SLAC) Development of fine pitch flexible circuit (Niigata) Striplet sensor (KEK) Ladder assembly(KEK) SOI pixel
Photon Sensors for Partilce ID
MCP PMT for ultimate timing resolutionFocusing DIRC counter with MCP-PMTMulti-pixel HPD for RICH in magnetic field GasPMT
Best timing sensors for single photon sensitivity even in a high B
(SLAC,TMU)
MCP-PMT (Burle85011) It is possible to reach a resolution of s ~ 50ps at 15kG.
The first demonstration of the Focusing DIRC prototype (SLAC)
AC RICH with 144ch HPD (Nagoya)This corresponds to 144 ch HAPD arrangement in inner layer of real ARICH (almost)Minimum distance between HAPDs ~1.0mm
~13.1mrad
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Pixel APD
MultiAlkali photocathode
Photon
Gas PMT (TMU)
Stable operation of a bi-alkali photocathode was established. Long term test (one year):
No change in QE.Performance of a
double Micromegas PMT in a high magnetic field. Even in 90 deg. (parallel to
the window surface) 20% gain is obtained.
World first demonstration for a stable operation of GasPMT with bi-alkarine photocathode
Silicon tracker
Impact parameter resolution
ILD
Belle ATLAS
Alice
SLD somehow achieved 20 years ago! (JB)
LHC detectors are beautiful…...but
LHCMega
trackers
A bit heavy !?Somewhat heavy !
Material budget is a key word
Typical LHC hybrid pixel detector
Belle lightweight Silicon strip ladder
flex r-z short (layer 1)
Design: KEKJigs: Melbourne
Assembly:Princeton
TPG Hybrid:Princeton
High densityFlex:Niigata
Two layer flex:Princeton
Monolithic CMOS sensorCAP3:
CAP4 revision
Hawaii
(Tested in the KEK-PS )
SOI pixel comes next
Promising vertex detector for future collider experiment
Excellent X-ray detector for the next generation…
SOI collaboration in US-JPN
Slide presented at PIXEL2010 by the LBNL team
R&D project started by Y. Arai in KEKDTPWith OKI semiconductor
MPW (Multi Project Wafer) run~Twice per Year
16Coming together on SOI wafer
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Integration Type Pixel (INTPIX4)
15 mm
10 mm
17x17 mm, 512x832 (~430k ) pixels 、 13 Analog Out 、 CDS circuit in each pixel.
Largest Chip so far.KEK
FNAL
LBNL Prototype Monolithic CMOS Imagers
AMS 0.35mm-OPTO• LDRD-1 (2005)10, 20, 40mm 3T pixels
• LDRD-2 (2006)(+ LDRD-2RH(2007))20mm pixels,in-pixel CDS(+ RadHard pixels)
OKI 0.15mm FD-SOI
• LDRD-SOI-1 (2007)10mm pixels,analog & binary pixels
OKI 0.20mm FD-SOI
• LDRD-SOI-2 (2008)20mm pixels, in pixel CDS fast binary pixels• LDRD-3 (2007)
20mm pixels, in-pixel CDSon-chip 5-bit ADCs • SOImager (2009)
~13mm pixels, 4x4 mm2 imager w/ fast readout
• TEAM Imager (2009)1kx1k 9mm pixels, analog
Thin CMOS SOI
We should collaborate…
R&D cost of advanced m-electronics is too much even for world major institutes.
Design/test facility are expensive to maintain Persons capable of the task are very precious
but few in the field.Share the access to special/expensive
resources/ companiesMutual review/information exchange/training
would be very helpful.Easier access to the chips developed by others.
More Functions in a finer pixel
Physical limitationsHuge R&D cost
Moor’s law seems saturate with 2D (planer) LSI only
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T-micro + OKI Semi + KEK/LBNLVertical (3D) Integration
Further integration with m-bump bonding (~5 um pitch) technology of T-Micro(ZyCube)
Detector R&D summary
Collaborations among US-J have been very fruitful for the last decade.
It should be much more important for the next decades because the applications of the most advanced industrial-level technology to the detector is almost impossible for any single institute/country to realize.
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Biggest issue in SOI Pixl
Front Gate and Back Gate can couple each otherBack Gate Effect
VTH _ front Cgate _ oxide
CBOXVG _ back
Snsor and electronics are too close
• Suppress the back gate effect.• Shrink pixel size without loosing sensitive area.• Increase break down voltage with low dose region.• Less electric field in the BOX which may improve radiation
hardness.
•Cut Top Si and BOX
•High Dose
•Keep Top Si not affected
•Low Dose
対策 : Buried p-Well (BPW)
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BPW Implantation
p(BPW)p+(PSUB)
SOI SiBuriedOxide(BOX)
PSUB Implantation
Pixel Peripheral
(a) (b)
Ids-Vgs Measurement without/with BPW
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w/o BPW with BPW=0VNMOS
Back gate effect is suppressed by the BPW.
shift
back channel open