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SS L Semiconductor System Lab 1 MS Thesis Design of Low Power Digital Hearing Aid Chip Jin Kyung Kim December 23, 2003

Design of Low Power Digital Hearing Aid Chip

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Page 1: Design of Low Power Digital Hearing Aid Chip

SS LSemiconductor System Lab

1

MS Thesis

Design of Low Power Digital Hearing Aid Chip

Jin Kyung KimDecember 23, 2003

Page 2: Design of Low Power Digital Hearing Aid Chip

SS LSemiconductor System Lab

2

Outline

• Introduction• Design of Digital Hearing Aid

– Specifications– Building Blocks

• Simulation Results• Conclusion and Further Work

Page 3: Design of Low Power Digital Hearing Aid Chip

SS LSemiconductor System Lab

3

Outline

• Introduction• Design of Digital Hearing Aid

– Specifications– Building Blocks

• Simulation Results• Conclusion and Further Work

Page 4: Design of Low Power Digital Hearing Aid Chip

SS LSemiconductor System Lab

4

Motivation• Hearing Problem is Serious!

– 10 % of population have difficulties in hearing.

0

100

200

300

400

500

600

700

800

900

1995 2005 2015 2025

# of people[Million]

Years

440

560

700

900

Increase of Hearing Problem

11%

45%14%

30%

Hearing Loss Ratio

Page 5: Design of Low Power Digital Hearing Aid Chip

SS LSemiconductor System Lab

5

Design Considerations

Small Size

(One-chip)

Low Power

(<500uW)

Programmability

LowPowerDigital

HearingAid!

LowPowerDigital

HearingAid!

Page 6: Design of Low Power Digital Hearing Aid Chip

SS LSemiconductor System Lab

6

Previous Work

JSSC 1989[Centre Swisse]

JSSC 1997[Philips]

JSSC 2002[TI]

Power Consumption 2.1mW 2.1mW400uW

@ no signalBandwidth 8kHz 8kHz 10kHz

Number of Channels - 4 2Total Harmonic Distortion - -45dB -40dB

Process 3um CMOS 0.8um CMOS 0.6um CMOSArea 35mm2 35mm2 12mm2

Misc.

4-chips,10 external

passive elements,EEPROM

IR remote control receiver,

TelecoilEEPROM

Page 7: Design of Low Power Digital Hearing Aid Chip

SS LSemiconductor System Lab

7

Outline

• Introduction• Design of Digital Hearing Aid

– Specifications– Building Blocks

• Simulation Results• Conclusion and Further Work

Page 8: Design of Low Power Digital Hearing Aid Chip

SS LSemiconductor System Lab

8

Specifications• Power < 500uW

– Battery lasts for 1 week at least. (16hr/day use)

• Supply Voltage = 1V

Lifetime

EMF1.1V

1.4V1.3V

[Zinc-Air Battery]

Page 9: Design of Low Power Digital Hearing Aid Chip

SS LSemiconductor System Lab

9

Specifications (Cont’d)

• Programmable 2 Channel DSP– Compensation for ‘ski-slope’ loss

• Acceptable Sound Quality– 12-bit Resolution

4-bit 12-bit16-bit

f

Gain

f

Gain

@ 16kHz Sampling Frequency

Page 10: Design of Low Power Digital Hearing Aid Chip

SS LSemiconductor System Lab

10

Specifications (Cont’d)

• Bandwidth – 8kHz

• Total Processing Time < 5ms– To avoid confusion with lip-reading

Page 11: Design of Low Power Digital Hearing Aid Chip

SS LSemiconductor System Lab

11

Overall Architectures

Microphone

Receiver

Preamp. ADC

DSP

ROMDAC

1.024MHz

32kHz

2.048MHzRing Oscillator

Preamplifier ReceiverDriver

[Digital Hearing Aid System]

Page 12: Design of Low Power Digital Hearing Aid Chip

SS LSemiconductor System Lab

12

Preamplifier• Microphone Specification

– Differential Output Gain 4.43V/V up to 100dB input– For A/D Converter Differential Input 140mV

Microphone

Receiver

Preamp. ADC

DSP

ROMDAC

Preamplifier ReceiverDriver

Input [dB SPL] Output [mV] Example

30~40 0.01 ~ 0.03 Ambient room noise/ Whisper

50~70 0.1 ~ 1 Conversation

80~90 3.16 ~ 10 Feature film in theater

90~11010 ~ 31.6

(@ 100dB)Bar with music

110 ~ 120 100 ~ Rock concert

130 ~ 140 Painful sound

※ Spec. for Knowles Inc. EM series Microphone

Page 13: Design of Low Power Digital Hearing Aid Chip

SS LSemiconductor System Lab

13

Preamplifier (Cont’d)

• Opamp. with MOS Resistive Circuit (MRC)– Small Area– Ease of Tunability

for Future AGC

MRC1

MRC2

vo

VG1 VG2

V'G1 V'G2

vi

1

2

3

4

VG1 VG2

T1

T2

T3

T4

I1

I2

)V(VLWK

RG2G1P

MRC−

=1

RMRC

RMRC

V1 V3

V2 V4

Page 14: Design of Low Power Digital Hearing Aid Chip

SS LSemiconductor System Lab

14

Preamplifier

Frequency Spectrum for 1kHz 1mV Input

• THD = -70dB @ 1kHz, 1mV input • THD = -52dB @ 10mV input• PowerMAX = 35uW

Page 15: Design of Low Power Digital Hearing Aid Chip

SS LSemiconductor System Lab

15

Analog-to-Digital Converter• Oversampling A/D Converter

– 12-bit Resolution A/D Converter • SNR > 72dB

– 1-bit 2nd Order Modulator with 64 Oversampling Ratio (fs/2f0)

Microphone

Receiver

Preamp. ADC

DSP

ROMDAC

Preamplifier ReceiverDriver

1/Z

1-bit DAC

1-bit ADC1/Z OSR

Delta-Sigma ModulatorDelta-Sigma Modulator Decimator

Page 16: Design of Low Power Digital Hearing Aid Chip

SS LSemiconductor System Lab

16

ADC Modulator

• SNR: 72dB (@ 1kHz)• Power: 89uW (Modulator: 82uW, Decimator: 7uW)

Frequency Spectrum for 1kHz 26mV Input

Page 17: Design of Low Power Digital Hearing Aid Chip

SS LSemiconductor System Lab

17

Digital Signal Processor• Specifications

– 2 Channel• Compensation for Ski-slope Loss

– 6 Programmable Parameters• P, G0, K, G1, G2, VC

– Serial Interface & Parameter ROM

Output

Freq.

Output

Input@High Freq.P

G0

K

G1

G2

Microphone

Receiver

Preamp. ADC

DSP

ROMDAC

Preamplifier ReceiverDriver

Page 18: Design of Low Power Digital Hearing Aid Chip

SS LSemiconductor System Lab

18

Parameter ROM

ROM Core

P K G0 G1 G2 VC

10 0000000100000000 1101 0110 0001 1000

Wor

d Li

ne D

ecod

er

Column Buffer

BL1

RippleCounterROM_SEL

2 416 4 44

P[1:0] K[15:0] G0[3:0] VC[3:0]G1[3:0] G2[3:0]

ROMCell

WL1

WL2

WL2

WL1

WL1

WL1

BL1

BL0

ColumnBuffer

Page 19: Design of Low Power Digital Hearing Aid Chip

SS LSemiconductor System Lab

19

DSP Frequency ResponseP G0

G1, G2 VC

G0 = 1/ 64, G1 = 32

1

23

P = 3, G1 = 32

2

1/2G0 = 1/ 64

P3 = 3, G0 = 1/ 64

64

32

16

P = 3, G0 = 1/ 64G1 = 32, G2 = 8

4

2

VC = 1

Page 20: Design of Low Power Digital Hearing Aid Chip

SS LSemiconductor System Lab

20

Digital-to-Analog Converter• Oversampling D/A Converter

– 12-bit Resolution D/A Converter• SNR > 72dB

– 1-bit 2nd Order Modulator with 128 OSR

Microphone

Receiver

Preamp. ADC

DSP

ROMDAC

Preamplifier ReceiverDriver

u(n)OSR

Interpolation Filter

1/Z

Decoder

1-bit DAC1/Z

Delta-Sigma ModulatorDelta-Sigma Modulator

y(t)

Analog LPF

Page 21: Design of Low Power Digital Hearing Aid Chip

SS LSemiconductor System Lab

21

Filter Coefficient OptimizationFilter Coeff.

“31”

2’s C

omp. CSD

0 1 1 1 1 1 1 0 0 0 0 1# of P.P. = 5# of INV = 0

# of P.P. = 2# of INV = 1

Filter Coeff.“3”

2’s C

omp. CSD

0 1 1 1 0 1# of P.P. = 2# of INV = 0

# of P.P. = 2# of INV = 1

WINNERWINNER

CSD Not Always Superior to 2’s Comp.

Page 22: Design of Low Power Digital Hearing Aid Chip

SS LSemiconductor System Lab

22

Decision AlgorithmFilter Coeff. Representation

1. Less P.P. (Adder)2. Less Inverter

Comparison

SharingSame Coeff.

2’s Comp. CSDfs Z-1

+

+

+

2fs

fs Z-1

+

+

+

2fs

Sharing Coeff.

19% Power Reduction Compared to CSD(28% to 2’s Comp.)

Page 23: Design of Low Power Digital Hearing Aid Chip

SS LSemiconductor System Lab

23

DAC

• SNR: 80dB @1kHz • Power: 65uW

Frequency Spectrum for 1kHz 26mV Input

Page 24: Design of Low Power Digital Hearing Aid Chip

SS LSemiconductor System Lab

24

Receiver DriverMicrophone

Receiver

Preamp. ADC

DSP

ROMDAC

Preamplifier ReceiverDriver• H-Bridge– High Efficiency– Low Power Dissipation

INP INNt

V

t

V

Knowles Inc. BPHF series Receiver

Page 25: Design of Low Power Digital Hearing Aid Chip

SS LSemiconductor System Lab

25

Outline

• Introduction• Design of Digital Hearing Aid

– Specifications– Building Blocks

• Simulation Results• Conclusion and Further Work

Page 26: Design of Low Power Digital Hearing Aid Chip

SS LSemiconductor System Lab

26

Total Simulation Results

• SNR: 70dB @ 1kHz • THD: -45dB

Frequency Spectrum for 1kHz 23mV Input

Page 27: Design of Low Power Digital Hearing Aid Chip

SS LSemiconductor System Lab

27

Total Simulation Results (Cont’d)

100 1000

Frequency (Hz)

-20

-18

-16

-14

-12

-10

-8

-6

-4

-2

0

500 4K 8K

Out

put A

mpl

itutd

e (d

B)

-14

-11

-2

-17

Vin=1mV (P=3, G0=1/2, G1=32, G2=8, VC=1, K=1)

Page 28: Design of Low Power Digital Hearing Aid Chip

SS LSemiconductor System Lab

28

Total Processing Time

Input(4kHz)

Output860usec (< 5msec)

Page 29: Design of Low Power Digital Hearing Aid Chip

SS LSemiconductor System Lab

29

Power Consumption

Preamp12.73%

ADC32.36%

DSP 4.00%

DAC23.64%

H - Bridge14.55%

Ring Osc.12.73%

Total Power275uW

Power Dissipation

Blocks Power (uW)

Preamplifier 35

ADC 89

DSP 11

DAC 65

H-Bridge 40

Ring Oscillator 35

Total 275uW

Page 30: Design of Low Power Digital Hearing Aid Chip

SS LSemiconductor System Lab

30

Power Comparison

0

500

1000

1500

2000

2500

Philips TI This Work

275

Power (uW)

Centre Swiss

Page 31: Design of Low Power Digital Hearing Aid Chip

SS LSemiconductor System Lab

31

Summary of Performance

Vdd 1V

Power Consumption 275uW

Number of Channels 2

Maximum Input Signal ~30mV

SNR D/A (@1kHz) 80dB

Temperature Range 0-100℃

Bandwidth 8kHz

SNR A/D (@1kHz) 72dB

SNR Audio Path (@1kHz) 70dB

THD Audio Path(@ 1kHz, 23mV input)

-45dB

Low Threshold 0.18um CMOS Process

Preamp. ADC

DAC

Preamplifier

ReceiverDriver

DSP

ROM

Receiver

Microphone

Page 32: Design of Low Power Digital Hearing Aid Chip

SS LSemiconductor System Lab

32

Outline

• Target• Building Blocks• Simulation Results• Conclusion and Further Work

Page 33: Design of Low Power Digital Hearing Aid Chip

SS LSemiconductor System Lab

33

Conclusion• A 1V 275uW Digital Hearing Aid Chip is Designed.

– Preamplifier with MRC• THD = -70dB @ 1kHz, 1mV input

– 1-bit 2nd Order ADC • OSR=64, SNR=72dB

– Programmable 2 channel DSP• 6 Programmable Parameters• Serial Interface & Parameter ROM

– 1-bit 2nd Order DAC • OSR=128, SNR=80dB• Coefficient Optimization of Interpolation Filter

– H-Bridge

Page 34: Design of Low Power Digital Hearing Aid Chip

SS LSemiconductor System Lab

34

Further Work• Implementation• Quality Improvement• H-Earphone (Healthy Earphone)

– Hearing aid with additional function• Noise cancellation, etc…

Page 35: Design of Low Power Digital Hearing Aid Chip

SS LSemiconductor System Lab

35

Supplementary

Page 36: Design of Low Power Digital Hearing Aid Chip

SS LSemiconductor System Lab

36

Delta-Sigma Modulator

INN

INP

CLK CLK

CLK CLK

CLKB CLKB

CLKBCLKB

CLK

CLK

CLK

CLK

CLKB

CLKB

CLKB

CLKB

CLKB

CLKB

CLKB

CLKB

CLK

CLK

CLK

CLK

CLKD

CLKD

CLKB

D

D

Q

Q

OUTN

OUTP

700pF

700pF

700pF

700pF

3pF

3pF

1pF

1pF

100fF

100fF

100fF

100fF

1st integrator

2st integrator

Comparator (1-bit ADC)

D-F/F

1-bit DAC

Page 37: Design of Low Power Digital Hearing Aid Chip

SS LSemiconductor System Lab

37

Decimation Filter

∏=

−+=4

0

32 )1()(i

i

zzH

2-1z -1z -1z -2z -2z -2z

2

2

-4z z z -8z z z

2-4 -4 -8 -8

2

z z z-16-16-16

1.024MHz1-bit

16-bit32kHz

Page 38: Design of Low Power Digital Hearing Aid Chip

SS LSemiconductor System Lab

38

Block Diagram

FIRBandSplitFilter

High-BandChannel

Low-BandChannel

Serial Interface CoefficientROM

VolumeControl

LEDATA

CK

DSP_OUT[15:0]

DSP_IN[15:0]

ROM_SEL

CK(32kHz)

Digital Signal Processor

16 16

Page 39: Design of Low Power Digital Hearing Aid Chip

SS LSemiconductor System Lab

39

Two-Band DSP Algorithm

DSPInput

DSPOutput

P

K

Hp

Lp

BandSplitFilter

1

0

G0

G2

G1

VC

Page 40: Design of Low Power Digital Hearing Aid Chip

SS LSemiconductor System Lab

40

Serial Interface

4-BitShift Register

LE

DATA

CK

2

P[0:1] K[0:15] G0[0:3] VC[0:3]

4-BitShift Register

4-BitShift Register

16-BitShift Register

4-BitShift Register

2-BitShift

Register

4-BitRegister

4-BitRegister

4-BitRegister

16-BitRegister

4-BitRegister

2-BitRegister

16 4 4 4 4

G1[0:3] G2[0:3]

Page 41: Design of Low Power Digital Hearing Aid Chip

SS LSemiconductor System Lab

41

DSP Performance SummaryI/O Type 2’s Complement 16-bit

High-Band Knee Point (K) 16-bit

Volume Control (VC) 4-bit

DSP 10 µWSerial Interface 1 µW

Clock Frequency 32 kHzChannel 2

Filter Type FIR FilterProgrammable Coefficients

Band Split (P) 2-bit

Low-Band Gain (G0) 4-bitHigh-Band Low-Level Gain (G1) 4-bit

High-Band Compression Ratio (G2) 4-bit

Power Dissipation

Active Area 0.3 x 0.3 mm2

Page 42: Design of Low Power Digital Hearing Aid Chip

SS LSemiconductor System Lab

42

Multiplication with Adders & Shifters

• 2’s Complement vs. Canonical Signed Digit (CSD)

Integer 2’s Complement CSD3 011 110

0

x15 x14 x1 x0

X 22

a1 a0a15 a14b1 b0b16 b15

+a0b0

c0

s0

+a1b1

s1

c1c2+a15b15

c15

s15

c16+b16

s16

c17+b17

s17

b17

x15 x14 x1 x0

X -2

(b)

x15 x14 x1 x0

X 20

x15 x14 x1 x0

X 21

a1 a0a15 a14b1 b0b16 b15

+a0b0

c0

s0

+a1b1

s1

c1c2+a14b14

c14

s14

a15

c15+b15

s15

c2+b16

s16s17

(a)

Implementation of ‘X * 3’ using (a) 2’s Complement (b) CSD

Page 43: Design of Low Power Digital Hearing Aid Chip

SS LSemiconductor System Lab

43

Ring Oscillator• CLK

– 2.048MHz, 1.024MHz, 512kHz, 256kHz, 128kHz, 64kHz, 32kHz

Delay DelayBias

Ring Oscillar

Divider

DividerDividerDividerDivider

2.04

8MH

z

1.02

4MH

z

64K

Hz

32K

Hz