Upload
others
View
3
Download
0
Embed Size (px)
Citation preview
1 23
TO-220
TAB
G(1)
C(2, TAB)
E(3)
G1C2TE3
Features• 10 μs of minimum short-circuit withstand time• VCE(sat) = 1.85 V (typ.) @ IC = 15 A• Tight parameter distribution• Positive VCE(sat) temperature coefficient• Low thermal resistance• Maximum junction temperature: TJ = 175 °C
Applications• Industrial drives• UPS• Solar• Welding
DescriptionThis device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimalbalance between inverter system performance and efficiency where the low-loss andthe short-circuit functionality is essential. Furthermore, the positive VCE(sat)temperature coefficient and the tight parameter distribution result in safer parallelingoperation.Product status link
STGP15M120F3
Product summary
Order code STGP15M120F3
Marking G15M120F3
Package TO-220
Packing Tube
Trench gate field-stop, 1200 V, 15 A, low-loss M series IGBT in a TO-220 package
STGP15M120F3
Datasheet
DS11255 - Rev 3 - August 2018For further information contact your local STMicroelectronics sales office.
www.st.com
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VCES Collector-emitter voltage (VGE = 0 V) 1200 V
ICContinuous collector current at TC = 25 °C 30 A
Continuous collector current at TC = 100 °C 15 A
ICP(1) Pulsed collector current 60 A
VGE Gate-emitter voltage ±20 V
PTOT Total dissipation at TC = 25 °C 259 W
Tstg Storage temperature range -55 to 150 °C
TJ Operating junction temperature range -55 to 175 °C
1. Pulse width is limited by maximum junction temperature.
Table 2. Thermal data
Symbol Parameter Value Unit
RthJC Thermal resistance junction-case 0.58°C/W
RthJA Thermal resistance junction-ambient 62.5
STGP15M120F3Electrical ratings
DS11255 - Rev 3 page 2/15
2 Electrical characteristics
TJ = 25 °C unless otherwise specified
Table 3. Static characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)CES Collector-emitter breakdown voltage VGE = 0 V, IC = 2 mA 1200 V
VCE(sat) Collector-emitter saturation voltage
VGE = 15 V, IC = 15 A 1.85 2.3
V
VGE = 15 V, IC = 15 A,
TJ = 125 °C2.1
VGE = 15 V, IC = 30 A,
TJ = 175 °C2.2
VGE(th) Gate threshold voltage VCE = VGE, IC = 500 μA 5 6 7 V
ICES Collector cut-off current VGE = 0 V, VCE = 1200 V 25 μA
IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V ±250 nA
Table 4. Dynamic characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
Cies Input capacitanceVCE = 25 V, f = 1 MHz,
VGE = 0 V
- 985 - pF
Coes Output capacitance - 118 - pF
Cres Reverse transfer capacitance - 38 - pF
Qg Total gate charge VCC = 960 V, IC = 15 A,
VGE = 0 to 15 V
(see Figure 23. Gate chargetest circuit)
- 53 - nC
Qge Gate-emitter charge - 8 - nC
Qgc Gate-collector charge - 32 - nC
Table 5. Switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time
VCE = 600 V, IC = 15 A,
VGE = 15 V, RG = 22 Ω,
(see Figure 22. Test circuit forinductive load switching)
- 26 - ns
tr Current rise time - 12 - ns
(di/dt)on Turn-on current slope - 1000 - A/μs
td(off) Turn-off delay time - 122 - ns
tf Current fall time - 163 - ns
Eon(1) Turn-on switching energy - 0.55 - mJ
Eoff(2) Turn-off switching energy - 0.85 - mJ
Ets Total switching energy - 1.4 - mJ
STGP15M120F3Electrical characteristics
DS11255 - Rev 3 page 3/15
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time
VCE = 600 V, IC = 15 A,
VGE = 15 V, RG = 22 Ω,
TJ = 175 °C
(see Figure 22. Test circuit forinductive load switching)
- 25 - ns
tr Current rise time - 14 - ns
(di/dt)on Turn-on current slope - 857 - A/μs
td(off) Turn-off delay time - 136 - ns
tf Current fall time - 270 - ns
Eon(1) Turn-on switching energy - 1.1 - mJ
Eoff(2) Turn-off switching energy - 1.13 - mJ
Ets Total switching energy - 2.23 - mJ
tsc Short-circuit withstand timeVCC ≤ 600 V, VGE = 15 V,
TJstart = 150 °C10 - μs
1. Including the recovery of the external diode. The diode is the same of the co-packed STGWA15M120DF3 device.2. Including the tail of the collector current.
STGP15M120F3Electrical characteristics
DS11255 - Rev 3 page 4/15
2.1 Electrical characteristics (curves)
Figure 1. Power dissipation vs case temperature
Ptot
150
100
50
00 50 100
(W)
200
150 TC(°C)
250 VGE ≥ 15 V, TJ ≤ 175 °C
GIPD271020141420FSR
Figure 2. Collector current vs case temperature
IC
15
10
5
00 50 100
(A)
20
150 TC(°C)
25
VGE ≥ 15 V, TJ ≤ 175 °C30
GIPD291020141132FSR
Figure 3. Output characteristics (TJ = 25 °C)
IC
40
30
10
00 1 3
(A)
2 4
50
VCE(V)
20
9V
11V
13VVGE=15V
5
GIPD291020141140FSR
Figure 4. Output characteristics (TJ = 175°C)
IC
40
30
10
00 1 3
(A)
2 4
50
VCE(V)
20
9V
11V
13V
VGE=15V
5
7V
GIPD291020141151FSR
Figure 5. VCE(sat) vs junction temperature
VCE(sat)
2.0
1.2-50 0 100
(V)
50 150
2.4
TC(°C)
1.6
2.8
VGE=15V
IC=7.5A
IC=30A
IC=15A
3.2
GIPD291020141158FSR
Figure 6. VCE(sat) vs collector current
1.6
0.80 5 1510 20
2.0
IC(A)
1.2
2.4
VGE=15V Tj=175°C
Tj=25°C
Tj=-40°C
25
VCE(sat) (V)
2.8
3.2
GIPD291020141315FSR
STGP15M120F3Electrical characteristics (curves)
DS11255 - Rev 3 page 5/15
Figure 7. Collector current vs switching frequency
IC
40
30
10
01
(A)
10 f(kHz)
20
TC=80°C
TC=100°C
Rectangular current shape,(duty cycle=0.5, Vcc= 600V Rg=22Ω, Vge=0/15V, Tj=175 °C)
GIPD291020141321FSR
Figure 8. Safe operating area
IC
10
1
(A)
10 VCE(V)1
10µs
100µs
1ms
100
Single pulse, Tc=25°CTj<175°C, VGE=15V
1µs
1000
GIPD291020141330FSR
Figure 9. Transfer characteristicsIC
40
30
10
03
(A)
5 VGE(V)
20
Tj=175°C
Tj=25°C
7
50
9 11
VCE = 8V
GIPD291020141347FSR
Figure 10. Normalized VGE(th) vs junction temperature
VGE(th)
0.8
1.1
-50
(norm)
TC(°C)0.7
0
0.9
1.0
50 100 150
VCE=VGE
IC=500µA
GIPD291020141405FSR
Figure 11. Normalized V(BR)CES vs junction temperature
V(BR)CES
1.04
0.88-50
(norm)
TC(°C)
1.0
0 50 100 150
IC=2mA
0.92
0.96
GIPD291020141443FSR
Figure 12. Capacitance variations
C(pF)
10
0.1 VCE(V)
1000
1 10
100
Cies
Coes
Cres
1100
f= 1MHz
GIPD291020141507FSR
STGP15M120F3Electrical characteristics (curves)
DS11255 - Rev 3 page 6/15
Figure 13. Gate charge vs gate-emitter voltage
VGE(V)
00 Qg(nC)20 40
4
8
12
16
10 5030
VCC = 960 VIC = 15 AIG = 1 mA
GIPD291020141517FSR
Figure 14. Switching energy vs collector current
E(mJ)
00 IC(A)
0.5
5 10
1
15 20
VCC=600V, VGE=15VRg=22Ω, Tj=175°C
1.5
2
2.5
Eon
Eoff
25 30
GIPD291020141521FSR
Figure 15. Switching energy vs gate resistance
E(mJ)
0 Rg(Ω)
1
20 400.8
1.2
60 80
VCC=600V, VGE=15VIC=15A, Tj=175°C
1.4
1.6
1.8Eon
Eoff
100
GIPD291020141526FSR
Figure 16. Switching energy vs junction temperature
E(mJ)
TJ(°C)
0.6
500.5
0.7
100
VCC=600V, VGE=15VIC=15A, Rg=22Ω
0.8
0.9
1Eon
Eoff
1500
1.1
GIPD291020141532FSR
Figure 17. Switching energy vs collector emitter voltage
E(mJ)
200 VCE(V)
1.1
400 6000.3
1.9
800
VGE=15V, Tj=175°CIC=15A, Rg=22Ω
Eon
Eoff
0.7
1.5
GIPD291020141536FSR
Figure 18. Short-circuit time and current vs VGE
tsc(µs)
9 VGE(V)
30
10 1110
12
VCC ≤ 600VTJ ≤150 °C Isc
tsc
20
40
13 14 15
60
20
40
80
Isc(A)GIPD291020141543FSR
STGP15M120F3Electrical characteristics (curves)
DS11255 - Rev 3 page 7/15
Figure 19. Switching times vs collector current
t(ns)
0 IC(A)5 101
15 20
VCC=600V,Tj=175°C,
VGE=15VRg=22Ω
tdoff
tdon
10
tf
tr
25 30
100
GIPD291020141715FSR
Figure 20. Switching times vs gate resistance
t(ns)
0 Rg(Ω)20 40
10
60 80
VCC=600V,Tj=175°C,
VGE=15VIC=15A
tdoff
tdon
100
tr
tf
1001
GIPD291020141725FSR
Figure 21. Thermal impedance
10 10 10 10 10 tp(s)-5 -4 -3 -2 -110-2
10-1
K
0.2
0.05
0.02
0.01
0.1
Zth=k Rthj-cδ=tp/t
tp
t
Single pulse
δ=0.5
ZthTO2T_B
STGP15M120F3Electrical characteristics (curves)
DS11255 - Rev 3 page 8/15
3 Test circuits
Figure 22. Test circuit for inductive load switching
A AC
E
G
B
RG+
-
G
C 3.3µF
1000µF
L=100 µH
VCC
E
D.U.T
B
AM01504v1
Figure 23. Gate charge test circuit
AM01505v1
k
k
k
k
k
k
Figure 24. Switching waveform
AM01506v1
90%
10%
90%
10%
VG
VCE
ICTd(on)
TonTr(Ion)
Td(off)
ToffTf
Tr(Voff)
Tcross
90%
10%
STGP15M120F3Test circuits
DS11255 - Rev 3 page 9/15
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitionsand product status are available at: www.st.com. ECOPACK® is an ST trademark.
STGP15M120F3Package information
DS11255 - Rev 3 page 10/15
4.1 TO-220 type A package information
Figure 25. TO-220 type A package outline
0015988_typeA_Rev_21
STGP15M120F3TO-220 type A package information
DS11255 - Rev 3 page 11/15
Table 6. TO-220 type A package mechanical data
Dim.mm
Min. Typ. Max.
A 4.40 4.60
b 0.61 0.88
b1 1.14 1.55
c 0.48 0.70
D 15.25 15.75
D1 1.27
E 10.00 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L 13.00 14.00
L1 3.50 3.93
L20 16.40
L30 28.90
øP 3.75 3.85
Q 2.65 2.95
STGP15M120F3TO-220 type A package information
DS11255 - Rev 3 page 12/15
Revision history
Table 7. Document revision history
Date Version Changes
10-Sep-2015 1 Initial release.
17-Apr-2018 2
Removed maturity status indication from cover page. The document status isproduction data.
Added Section 2.1 Electrical characteristics (curves).
Updated Section 4.1 TO-220 type A package information.
Minor text changes
01-Aug-2018 3 Updated Table 5. Switching characteristics (inductive load).
STGP15M120F3
DS11255 - Rev 3 page 13/15
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
4.1 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
STGP15M120F3Contents
DS11255 - Rev 3 page 14/15
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to STproducts and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. STproducts are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design ofPurchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2018 STMicroelectronics – All rights reserved
STGP15M120F3
DS11255 - Rev 3 page 15/15