Datasheet Ratings for MOSFET,IGBT,Diodes and Thyristors (Especificaciones)

8/18/2019 Datasheet Ratings for MOSFET,IGBT,Diodes and Thyristors (Especificaciones)

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0

50

100

150

200

0

sin.180

rec.180

cont.

IFAV A

W

P FAV

rec.120

rec.

60

25 50 75 100 125

dtdi

Q2I Frr RRM

trr = t s + t f

ts t f diFdt

Fdt

IRRM

IF

0.9 I RRM

0.2 I RRMQs Q f

Q rr = Q s+ Q f

i

v

Q rr – reverse recovery charge

Qs – storage charge

t rr – reverse recovery time

ts – storage time

Q f – fall time charge

t f – fall time

IRRM – reverse recovery peak current

VF

I,V

RRM

rr rr I

Q2t

dtdi

II

Q2t

F

RRM

RRM

rr f

dtdi

It

F

RRMS


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1

10

100

1000

1 10 100 1000V VDS

I A

D

100 µs

1 ms

10 ms

T = 25 °CCT 150 °C j ≤

Not for linear use

0

100

200

300

400

500

0 2 4 6 8 1 0V VCC

7 V

6.5 V

6 V

5.5 V

5 V

4.5 V4 V

8 V10 VV = 20 VGS

t = 80 sp μT = 25 °C j

A

ID

0

100

200

300

400

0 2 4 6 8 1 0V VGS

A

t = 80 sp μ

V = 25 VDS

ID

0

10

20

30

0 50 100 150°C

Ω

98%

typ.

T

R

j

DS(on)


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Driver

+

-

~

SKiiP: 2-fold "GB" (Case S2; S23)

Driver

+

-

~



+

-

~

Driver

SKiiP: 3-fold "GD" (Case S3; S33)

Driver

+

-

UVW

only SKiiP2: 4-fold "GH" (Case S5GH) only SKiiP2: 4-fold "GDL" (Case S5GDL)

+

-

U

V

Driver Driver

+

-

UVWBR

Driver Driver

Driver

+

-

~

only SKiiP4: 6-fold "GB"


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Documents

Datasheet Ratings for MOSFET,IGBT,Diodes and Thyristors (Especificaciones)