ACEPACK™ 1

Features• ACEPACK™ 1 power module

– DBC Cu Al2O3 Cu• Sixpack topology

– 1200 V, 35 A IGBTs and diodes– Soft and fast recovery diode

• Integrated NTC

Applications• Inverters• Industrial• Motor drives

DescriptionThis power module is a sixpack topology in an ACEPACK™ 1 package with NTC,integrating the advanced trench gate field-stop technologies fromSTMicroelectronics. This new IGBT technology represents the best compromisebetween conduction and switching loss, to maximize the efficiency of any convertersystem up to 20 kHz.

Product status

A1P35S12M3

Product summary

Order code A1P35S12M3

Marking A1P35S12M3

Package ACEPACK™ 1

Leads type Solder contact pins

ACEPACK™ 1 sixpack topology, 1200 V, 35 A, trench gate field‑stop M series IGBT with soft diode and NTC

A1P35S12M3

Datasheet

DS11635 - Rev 5 - November 2018For further information contact your local STMicroelectronics sales office.

www.st.com

1 Electrical ratings

1.1 IGBTLimiting values at TJ = 25 °C, unless otherwise specified.

Table 1. Absolute maximum ratings of the IGBT

Symbol Parameter Value Unit

VCES Collector-emitter voltage (VGE = 0 V) 1200 V

IC Continuous collector current (TC = 100 °C) 35 A

ICP(1) Pulsed collector current (tp = 1 ms) 70 A

VGE Gate-emitter voltage ±20 V

PTOT Total power dissipation of each IGBT (TC = 25 °C, TJ = 175 °C) 250 W

TJMAX Maximum junction temperature 175 °C

TJop Operating junction temperature range under switching conditions -40 to 150 °C

1. Pulse width limited by maximum junction temperature.

Table 2. Electrical characteristics of the IGBT

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)CESCollector-emitter breakdownvoltage IC = 1 mA, VGE = 0 V 1200 V

VCE(sat)

(terminal)Collector-emitter saturationvoltage

VGE = 15 V, IC= 35 A 1.95 2.45

VVGE = 15 V, IC = 35 A,

TJ = 150 ˚C2.3

VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V

ICES Collector cut-off current VGE = 0 V, VCE = 1200 V 100 µA

IGES Gate-emitter leakage current VCE = 0 V, VGE = ± 20 V ± 500 nA

Cies Input capacitanceVCE = 25 V, f = 1 MHz,

VGE = 0 V

2154 pF

Coes Output capacitance 164 pF

Cres Reverse transfer capacitance 86 pF

Qg Total gate chargeVCC = 960 V, IC = 35 A,

VGE = ±15 V163 nC

td(on) Turn-on delay time VCC = 600 V, IC = 35 A,

RG = 10 Ω, VGE = ±15 V,

di/dt = 1900 A/µs

122 ns

tr Current rise time 17 ns

Eon(1) Turn-on switching energy 1.21 mJ

td(off) Turn-off delay time VCC = 600 V, IC = 35 A,

RG = 10 Ω, VGE = ±15 V,

dv/dt = 7800 V/µs

142 ns

tf Current fall time 150 ns

Eoff(2) Turn-off switching energy 2.19 mJ

A1P35S12M3Electrical ratings

DS11635 - Rev 5 page 2/15

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time VCC = 600 V, IC = 35 A,

RG = 10 Ω, VGE = ±15 V,

di/dt = 1533 A/µs,

TJ = 150 °C

124 ns

tr Current rise time 18 ns

Eon(1) Turn-on switching energy 1.8 mJ

td(off) Turn-off delay time VCC = 600 V, IC = 35 A,

RG = 10 Ω, VGE = ±15 V,

dv/dt = 6700 V/µs,

TJ = 150 °C

142 ns

tf Current fall time 256 ns

Eoff(2) Turn-off switching energy 3.1 mJ

tSC Short-circuit withstand timeVCC ≤ 600 V, VGE ≤ 15 V,

TJstart ≤ 150 °C10 µs

RTHj-cThermal resistance junction-to-case Each IGBT 0.55 0.60 °C/W

RTHc-hThermal resistance case-to-heatsink Each IGBT, λgrease = 1 W/(m·°C) 0.70 °C/W

1. Including the reverse recovery of the diode.2. Including the tail of the collector current.

1.2 DiodeLimiting values at TJ = 25 °C, unless otherwise specified.

Table 3. Absolute maximum ratings of the diode

Symbol Parameter Value Unit

VRRM Repetitive peak reverse voltage 1200 V

IF Continuous forward current at TC = 100 °C 35 A

IFP(1) Pulsed forward current (tp = 1 ms) 70 A

TJMAX Maximum junction temperature 175 °C

TJop Operating junction temperature range under switching conditions -40 to 150 °C

1. Pulse width limited by maximum junction temperature.

Table 4. Electrical characteristics of the diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

VF

(terminal)Forward voltage

IF = 35 A - 2.95 4.1V

IF = 35 A, TJ = 150 ˚C - 2.3

trr Reverse recovery time

IF = 35 A, VR = 600 V,

VGE = ±15 V, di/dt = 1900 A/μs

- 140 ns

Qrr Reverse recovery charge - 2.62 µC

Irrm Reverse recovery current - 54 A

Erec Reverse recovery energy - 1.2 mJ

A1P35S12M3Diode

DS11635 - Rev 5 page 3/15

Symbol Parameter Test conditions Min. Typ. Max. Unit

trr Reverse recovery timeIF = 35 A, VR = 600 V,

VGE = ±15 V, di/dt = 1533 A/μs,

TJ = 150 °C

- 350 ns

Qrr Reverse recovery charge - 6.6 µC

Irrm Reverse recovery current - 63 A

Erec Reverse recovery energy - 3.2 mJ

RTHj-cThermal resistance junction-to-case Each diode - 0.8 0.9 °C/W

RTHc-hThermal resistance case-to-heatsink Each diode, λgrease = 1 W/(m·°C) - 0.75 °C/W

1.3 NTC

Table 5. NTC temperature sensor, considered as stand-alone

Symbol Parameter Test conditions Min. Typ. Max. Unit

R25 Resistance T = 25°C 5 kΩ

R100 Resistance T = 100°C 493 Ω

ΔR/R Deviation of R100 -5 +5 %

B25/50 B-constant 3375 K

B25/80 B-constant 3411 K

T Operating temperature range -40 150 °C

Figure 1. NTC resistance vs temperature

GADG260720171142NTC

10 4

10 3

10 2 0 25 50 75 100 125

R (Ω)

TC (°C)

Figure 2. NTC resistance vs temperature, zoom

GADG260720171151NTCZ

800

700

600

500

400

30085 90 95 100 105 110

R (Ω)

TC (°C)

max

min

typ

A1P35S12M3NTC

DS11635 - Rev 5 page 4/15

1.4 Package

Table 6. ACEPACK™ 1 package

Symbol Parameter Min. Typ. Max. Unit

Visol Isolation voltage (AC voltage, t = 60 s) 2500 Vrms

Tstg Storage temperature -40 125 °C

CTI Comparative tracking index 200

Ls Stray inductance module P1 - EW loop 28.7 nH

Rs Module single lead resistance, terminal-to-chip 3.9 mΩ

A1P35S12M3Package

DS11635 - Rev 5 page 5/15

2 Electrical characteristics (curves)

Figure 3. IGBT output characteristics (VGE = 15V, terminal)

IGBT230820171146OC25

60

50

40

30

20

10

00 1 2 3 4 5

IC (A)

VCE (V)

TJ = 25 °C

TJ = 150 °C

Figure 4. IGBT output characteristics(TJ = 150 °C, terminal)

IGBT230820171148OC175

60

50

40

30

20

10

00 1 2 3 4 5

IC (A)

VCE (V)

9 V

17 V

19 V

15 V

13 V11 V

Figure 5. IGBT transfer characteristics(VCE = 15 V, terminal)

IGBT230820171148TCH

60

50

40

30

20

10

05 6 7 8 9 10 11

IC (A)

VGE (V)

TJ = 25 °C

TJ = 150 °C

Figure 6. IGBT collector current vs case temperature

IGBT061120180836CCT

70

60

50

40

30

20

10

00 25 50 75 100 125 150

IC (A)

TC (°C)

VCC = 15 V, TJ ≤ 175 °C

A1P35S12M3Electrical characteristics (curves)

DS11635 - Rev 5 page 6/15

Figure 7. Switching energy vs gate resistance

IGBT230820171149SLG

7

6

5

4

3

2

1

00 20 40 60 80

E (mJ)

RG (Ω)

VCC = 600 V, VGE = ± 15 V, IC = 35 A

EON (TJ = 150 °C)

EON (TJ = 25 °C)

EOFF (TJ = 150 °C)

EOFF (TJ = 25 °C)

Figure 8. Switching energy vs collector current

IGBT230820171150SLC

5

4

3

2

1

05 15 25 35 45 55 65

E (mJ)

IC (A)

VCC = 600 V, VGE = ± 15 V, RG = 10 Ω

EON (TJ = 150 °C)

EON (TJ = 25 °C)

EOFF (TJ = 150 °C)

EOFF (TJ = 25 °C)

Figure 9. IGBT reverse biased safe operating area(RBSOA)

IGBT230820171151FSOA

70

60

50

40

30

20

10

00 200 400 600 800 1000 1200

IC (A)

VCE (V)

TJ = 125 °C, VGE = ±15 V, RG = 10 Ω

Figure 10. Diode forward characteristics (terminal)

IGBT230820171154DVF

60

50

40

30

20

10

00 1 2 3 4

IF (A)

VF (V)

TJ = 25 °C

TJ = 150 °C

Figure 11. Diode reverse recovery energy vs diode currentslope

IGBT230820171431RRE

3.2

2.8

2.4

2.0

1.6

1.2

0.8

0.4400 800 1200 1600

Erec (mJ)

di/dt (A/µs)

VCE = 600 V, IF = 35 A, VGE = ±15 V

TJ = 25 °C

TJ = 150 °C

Figure 12. Diode reverse recovery energy vs forwardcurrent

IGBT230820171157RRE

4.2

3.6

3.0

2.4

1.8

1.2

0.65 15 25 35 45 55 65

Erec (mJ)

IF (A)

TJ = 150 °C

TJ = 25 °C

VCE = 600 V, RG = 10 Ω, VGE = ±15 V

A1P35S12M3Electrical characteristics (curves)

DS11635 - Rev 5 page 7/15

Figure 13. Diode reverse recovery energy vs gateresistance

IGBT230820171158RRE

3.2

2.8

2.4

2.0

1.6

1.2

0.8

0.40 20 40 60 80

Erec (mJ)

RG (Ω)

TJ = 150 °C

TJ = 25 °C

VCE = 600 V, IF = 35 A, VGE = ±15 V

Figure 14. Inverter diode thermal impedance

IGBT230820171500MT

10 0

10 -1

10 -3 10 -2 10 -1 10 0

Zth(°C/W)

t (s)

Zth (typ.) JH

Zth (max.) JC

JC

i 1 2 3 4ri (˚C/W) 0.1372 0.4030 0.2525 0.1034τi(s)

JH

iri (˚C/W) 0.1497 0.4233 0.7016 0.2714τi(s) 0.0919 0.4067

0.0009 0.0090 0.0513 0.3253

0.0011 0.0154

1 2 3 4

RC - Foster thermal network

RC - Foster thermal network

Figure 15. IGBT thermal impedance

IGBT230820171153MT

10 0

10 -1

10 -3 10 -2 10 -1 10 0

Zth(°C/W)

t (s)

Zth (typ.) JH

Zth (max.) JC JC

i 1 2 3 4ri (˚C/W) 0.0619 0.3073 0.1502 0.0784τi(s) 0.3556

JH

iri (˚C/W) 0.0604 0.3088 0.5759 0.3016τi(s) 0.0005 0.0152 0.0939 0.3964

0.0005 0.0103 0.0613

1 2 3 4

RC - Foster thermal network

RC - Foster thermal network

A1P35S12M3Electrical characteristics (curves)

DS11635 - Rev 5 page 8/15

3 Test circuits

Figure 16. Test circuit for inductive load switching

A AC

E

G

B

RG+

-

G

C 3.3µF

1000µF

L=100 µH

VCC

E

D.U.T

B

AM01504v1

Figure 17. Gate charge test circuit

AM01505v1

k

k

k

k

k

k

Figure 18. Switching waveform

AM01506v1

90%

10%

90%

10%

VG

VCE

ICTd(on)

TonTr(Ion)

Td(off)

ToffTf

Tr(Voff)

Tcross

90%

10%

Figure 19. Diode reverse recovery waveform

25

A1P35S12M3Test circuits

DS11635 - Rev 5 page 9/15

4 Topology and pin description

Figure 20. Electrical topology and pin description

P

G1 G3 G5

G2 G4 G6

UV

W

EWE’W

EVE’V

EUE’U

T1

T2

Figure 21. Package top view with sixpack pinout

A1P35S12M3Topology and pin description

DS11635 - Rev 5 page 10/15

5 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®

packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitionsand product status are available at: www.st.com. ECOPACK® is an ST trademark.

A1P35S12M3Package information

DS11635 - Rev 5 page 11/15

5.1 ACEPACK™ 1 sixpack solder pins package information

Figure 22. ACEPACK™ 1 sixpack solder pins package outline (dimensions are in mm)

33.8±0.3

28.1±0.2

19.4±0.2

16.4±0.2

62.8

±0.

5

53±

0.1

42.5

±0.

2

41±

0.2

48±

0.3

4.5±0.1

3.2 BSC

12±

0.35

15.5

±0.

50

36.8

REF

1.3±0.2

2.5±0.2

3.2

BSC

Detail A

Section B-B

2.3

REF 8.5

3.5 REF x45°

B

B

AA

3.20

6.40

0.00

12.80

16.00

22.40

25.60

28.80

32.00

0.00

6.40

16.0

0

19.2

0

25.6

0

G6

P

W

VW

G5

T1

T2

G3

U

U

G1

E'W EW G4 EV E'V EU E'U

G2

P

V

3.20

9.60

22.4

0

0.64±0.03

GADG240820170900MT_8569715_4

• The lead size includes the thickness of the lead plating material.• Dimensions do not include mold protrusion.• Package dimensions do not include any eventual metal burrs.

A1P35S12M3ACEPACK™ 1 sixpack solder pins package information

DS11635 - Rev 5 page 12/15

Revision history

Table 7. Document revision history

Date Revision Changes

02-May-2016 1 Initial release.

24-Aug-2017 2

Updated title, features, description and Table 1: "Device summary" in cover page.Updated Section 1: "Electrical ratings". Added Section 2: "Electrical characteristicscurves", Section 3: "Test circuits", Section 4: "Topology and pin description" andSection 5: "Package information".

Minor text changes.

02-Oct-2017 3

Document status promoted from preliminary data to production data.

Updated Table 7: "ACEPACK™ 1 package" and Section 2: "Electricalcharacteristics curves".

Minor text changes.

16-Feb-2018 4

Updated features and removed maturity status indication from cover page.

Updated Figure 13. Inverter diode thermal impedance and Figure 14. IGBT thermalimpedance.

Updated Figure 21. ACEPACK™ 1 sixpack solder pins package outline(dimensions are in mm).

Minor text changes

14-Nov-2018 5Added Figure 6. IGBT collector current vs case temperature.

Minor text changes

A1P35S12M3

DS11635 - Rev 5 page 13/15

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

1.1 IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

1.2 Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

1.3 NTC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

1.4 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

2 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9

4 Topology and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

5 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

5.1 ACEPACK™ 1 sixpack solder pins package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

A1P35S12M3Contents

DS11635 - Rev 5 page 14/15

IMPORTANT NOTICE – PLEASE READ CAREFULLY

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to STproducts and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. STproducts are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design ofPurchasers’ products.

No license, express or implied, to any intellectual property right is granted by ST herein.

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.

Information in this document supersedes and replaces information previously supplied in any prior versions of this document.

© 2018 STMicroelectronics – All rights reserved

A1P35S12M3

DS11635 - Rev 5 page 15/15