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~D-A181 168 MEASURING AND MODELLING THE TRANSITION LAYER DURING THE 1/1DISSOLUTION OF GR (U) CORNELL UNIV ITHACA SCHOOL OFCHEMICAL ENGINEERING P D KRASICKY ET AL 29 MAY 87
UNCLASSIFIED TR-5 N88814-85-K-8474 F/G 7/ 6 NL
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OFFICE OF NAVAL RESEARCH
Contract NOQO 1 4-85-K-0474
00W" Technical Report No. 5
MEASURING AND MODELLING THE00 TRANSITION LAYER DURING THE DISSOLUTION
OF GLASSY POLYMER FILMS
o by
P. D. Krasicky, R, J. Groele, and F. Rodriguez
Olin Hall, Cornell University
School of Chemical EngineeringIthaca, NY 14853
Prepared for presentation at theNational Meeting of the American Institute of Chemical Engineers
Boston, August 24-27, 1987
Reproduction in whole or in part is permittedfor orICILECTE
any purpose of the United States Government .\JUN 1 0 1987
*This document has been approved for public release%')and sale; its distribution is unlimited
67 6 4 ,J
SECUf•ITY CLASSIFICATION OF THIS PAGE ("o.e Data Ensoteid)READ INSTRUCTIONS
REPORT DOCUMENTATION PAGE BEFORE COMPLETING FORM1. REPORT NUMBER 2. GOVT ACCESSION NO. 3. RECIPIENT'S CATALOG NUMBER
4. TITLE (and Subtitle) S. TYPE OF REPORT 6 PERIOD COVERED
Measuring and Modelling the Transition LayerDuring the Dissolution of Glassy Polymer Films Technical Report
6. PERFORMING ORG. REPORT NUMBER
7. AUTHOR(e) 6. CONTRACT OR GRANT NUMBER(@)
P. D. Krasicky, R. J. Groele, F. Rodriguez
S. PERFORMING ORGANIZATION NAME AND ADDRESS 10. PROGRAM ELEMENT. PROJECT. TASKAREA I WORK UNIT NUMBERS
Cornell UniversityIthaca, NY 14853
It. CONTROLLING OFFICE NAME AND ADDRESS 12. REPORT DATE
Chemistry May 29, 1987Office of Naval Research 13. NUMBER OF PAGES
Arlington, VA _?_17__9
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Technical Report Distribution List, GEN/413-2.
For unlimited distribution and public release.
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Abstracts Distribution List, 356A/413-2.For unlimited distribution and public release.
III. SUPPLEMENTARY NOTES
Presented at National Meeting of American Institute of Chemical Engineers,August 24-27, 1986, Boston, M1Au ut,,. s ..
I9. KEY WORDS (Continue on rev*ree ade It n*coddea-y nd identify by block nu.mber)
Poly (methyl methacrylate)Dissolut ionTransition layersMicrolithography
V 0. ABSTRACT (Continue ?*ver*e *ide If necoeOery and Identi y by block number)
--he technique of laser interferometry is now routinely used by the micro-electronics industry for the measurement of the dissolution rates of thinpolymer films. In addition to the rate of dissolution, laser interferometrycan also provide quantitative information on the thickness of the transitionlayer between the dissolving glassy polymer and the liquid solvent. This paperdescribes how observed patterns of reflected light intensity may be analyzed
- to calculate the thickness of the transition layer for polymers that dissolve
DD , jAN 7,1473 EDITION oF I NOV 6 IS OBSOLETES/N 0102-LF-014-6601
SECURITY CLASSIFICATION OF THIS PAGE (When Date Entered)
.%
SECURITY CLASSIFICATION OF THIS PAGE (Mlong Dot& Entored)
with little or no swelling. The technique required knowledge of the shapeof the concentration profile in the transition layer. However, by assumingvarious simple model profiles one may obtain a reasonable estimate.Experimental measurements of PMiA films dissolving in methyl ethyl ketoneindicate transition layers of thicknesses 0 to 0.1 pm for PMMA of molecularweights M n 37,000 to 1,400,000
~ F~r
r, ibut ion/-... .
.... : try Codes
,.st Spocial
i'iD
a L
SIC~uIlT'r C.ASSUICATIONi OF'TMIS PAOI (W~o n Data Enelred)
MEASURINGAND MODELLING THETRA~NSITION LA~YER DURING THE DISSOLUTION
OF GLA~SSY POLYMER FILMS
P.D. Krasicky, R.3. Groele, F. RodriguezSchool of Chemical Engineering, Olin Hall
Cornell UniversityIthaca, NY 14853
I N'tROI)U:T I ON
Over the past few ye'ars "there has been a renew~ed interest in
+-~d/ of plolYmer- selling and dissolution behavior. Most
' t I. I rnod elI havo c conc en t.r ated on diffusion and swjel-
100 nc h t somre uo T-v 5s ,o be~n do i-e onT- d 1s sol-jt ion. T me
.N-ie v~irif-ty of observed phenomena is indicative of the complexi-
t y o)f the problem. E.:-per mental 1y, many techniques and samplp
qpomnetrie-, have been uised." Optical rnicroscop"I' has proven
11seful i-1 the study o1 Sw~elling and dissnlution behavior since
~t Z31l1ows measurement of the rate of dissoluLtion and observation
,.F the concentration profile i n the dissolving surface layer.
10.)wever. microscopy wor~s best wjhen the dimensions being observed
* - e I C H,7) o-r greater. Rutherford 2ackscattering Spectroscopy,
ma,, b r used to mak-e mea,;urxement,s on inuc(h smallepr dimensions, but
3neit cannot be don in rsE r itu and reursspecial sample
rrpraiT procedures-, i t. i' lim iteri to the study of sw~elling
o n I Y.
This p-ipor- was pre-'-nted in part at the National
V Meetingi nf the Amer. Inst. of Chem. Engs., Boston,
'Auts 2- -7. !qG6.
/f
.~~ ~ ~ .'% .. .. . .
Of particular interest to the microelectronics industry is
the dissolution of a 1 Hm thick polymer film on a silicon
substrate. Thr technique of laser interferometry,"I is now
routinely used for the screening of new polymer-solvent systems
and for the optimization of processing conditions. Not so
obvious in the use of laser iriterferometry is the quantitative
information it can provide on the dissolving surface layer for
rolymers that dissolve with little or no swelling.
DISSOLUTION RATE MEASUREMENT USING LASER INTERFEROMETRY
Laser interferometry is popular as the method of dissolution
,-ate measurement since the sample geometries and substrate
materials of typical microlithographic processes can be used. The
basic: apparatus for laser interferometry is shown in figure I . A
silicon wafer that has been coated with a 0.5 to 1.5 Hm thic:
film of polymer is suspended in a transparent cylindrical
container filled with the developing solvent. The solvent
container includes a magnetic stirrer and a heating/cooling coil
convnected to a temperature bath. The beam from Hn unpolarized '-le--
Ne laser of wavelength 6328 A is directed ohliquely at the roated
ubstrate with an incident angle of typically 100. The reflected
beam is collected by a silicon photocell and the recorded signal
represents the reflected intensity as a function of time. A more
(-omp I Ct e description of the technique is gi vV h Kras I y
et. al..'
C-
%2
FW,
As the polymer film 'dissolves, the reflected intensity
should oscillate due to thin film interference effects. The
quantity of interest is the reflectance R which is defined as
the ratio of the reflected light intensity to the incident light
intensity. A sufficiently accurate expression for the reflectance
H = r,,, - cr,:-,r> . ( l-r;.. ':cos(,. ( ]
Here r, a a-e the F-esnel reflet on coefficierrts for the
polymer/suLIstratE, alrd SIvent/po iymer interfac :s, respect ve--
1,- y. The phase angle 0- is the diFference io phase between light
rays reflected frem the two inter-faces. The phase angle is given
4rT d 4 r ;' -
Where d is the thickness; o- the polymer tilm, is the tree
'space avnlergth of thc 1 iht (h t is t",e irrcf dent agie o+ thc
light, 3nd n -rd n are t P -,e-fr:arti%,e iIdires ot the s - .'e,)t
ard oDIymer. Figure P is a ,ketch of a tylpiral observed -etlert-
r-d in te FrI .t y pat t er n. A 7 P fx)er(-t e thp r ~e IF-(-t ed. it (- IIt
nsc1llates sinusoidally until the film is completely dilssolvd.
after wahich th- ref lectance from the bare substrate I s ,:orItaTt
"From a reflectance-time trare such as finjure a. meash em ont of
LA
the reflectance ratio a/b arfd the period of oscillation T allows
calculation of the dissolution rate of the polymer film and the
polymer's !efractive index. Values of the refractive indices of
the substrate and soIvent, the wavelength of light, and the
inc:ident anole must also be known.
fhe above a.na 1 ycis applies only if the solv rnt/polymer
iterface )s 1'erf e(tIy sharp. For some polymer-solvent systems
this interface is not perfectly sharp, but is expanded into a
-cntito,js t-ansition layer of nonzero thickness. The appropriate
* prescIro,1 to- th reflectance is now
F , . " + :'fr ,:.r;,,( L-r; ,'c- ,< ?
1 'I , is osI tire factor less than unity mult plyinq the
jie (tn ,- (ro f nr: t r and t 0',. + ,,,. B t, f 'id t
:ae ang1e 0, deoe,-,d on the thickness and s!hape ot toe
?rotratiron profile in the transition layer. The effect of the
t-ans 1'.on layer in t.o reduce the amplituCde of the -efl Iectance
Sse: 1 Ii at n,-. t by The factor f while preservin the average value
of the r f Ior t aTre aTd to ,h Ift the ns, i 1 1 at ins phase, tby
, IT, ittd , , edur ton factor 1 is measLirerd a -- 3)a)
,ffs t r--r f,) td-d bet-eF'n the maximum value of ref lect-ance ii thc-
I -r I at io--; c)nd rte reflectance of the bare substratfe after the
f Im has completely dlissolved (see figur e 3).
a -b+ s) (b
(a -' s) - (b3 - s,)
-4
- #
The phase angle IS isMeaSUIr9-d in terms of the time interval tol
between the observed endpoint of dissolution and the next
ex-pec-ted maximum relative to the period for a Complete oscilla-
t i On.
L,'rrection for Si Iicon Oxide Laver
.small correction nec- to be macle when a si licon wafer i
U se ( a s ihe s ubstrate mzate, ia 3 verA thin layer of Silicon
ox ide i s 'always Present and c~an account for- an additional phase
shift qiven approximately by
where d.. is the thickness o-f the silicon oxide layer, n_ s it s
refractive index.. -and e\ is th-~ w~avlength of light used. Fcr
the silI icon substrates used in this work the thickness ot the
nat i vn oF 0d1e IlayerT wa rqeA U r eel by elI i pslomeitry to be ahoci t
Pl A. 1his can 3CClrut tor)T a phas5e s h 1ft n f _7.,O vihich Mu t heL-
,uttrar ted fr-om the mrasutred value of 0, to get the phase Ihif t
Otue to thp transit ion) layer alu net-
- - .~.. ' ~ -;~-.**~*-* *~"~~9I-V ~ " *' - V
Sur face Roughness
One might wonder whether an alternate explanation for the
apparent reduction in the amplitude of the reflectance oscilla-
tions could he roughness on the dissolving pol-ymer surface.
Usng simple scattering theory it can be shown that the presence
o!a rough surface at the polymer/solvent interface would result
in a reduction of the amplitude of the reflectance oscillations,
hut the average value of the reflectance would also he reduced.
1I surface roughness were present one would calculate an er-
roneous polymer refract ve index when applying the equat ioi,
cleri ved for the' presence of a transition layrer. For the po yme-rs
used in th-s study the refractive index Was ver!fied to be
correct by other means. Thus it appears the formation of a
transition layer is the correct explanation for the' observed
havor.
IUANTITATIVE ANALYSIS OF THE TRANSITION LAYER
The magnitude of the observed amplitude reductinr: factu: m.
h)Fe, used Is a gauge of the thickness of the tri tJ7, 1 y-,
.,etweero the solvent and the glassy polymer . A value of =
,oUld correspond to a perfectly sharp interface, i.e. a t7 1-
t in laynr of zero thickness. Values of f 1 correspond to
thirhLer transitinn layers. A more quantitative analysis is ,l
JuucV ihlO. In principle, one can ralculate an absol,,te thiu kness
V LW
of the transition layer, provided the shape of the concentration
prmof ile is krnown. For simpl ic ity, this prof ile may be expressed
in term5i of refractive index (as in figure 4). It can be shown
'hat the variation in refractive index through the transition
ilyer is to -a good aporoximation proportional to the variation i-
concv:en tr a tion. I t i s assumed that the transition 1-ye has a
f iite th i ckness 6S and that the refractive indlex in the laver-
va~ries only in the direction perpendicular to the surface, IFcI
v'hich the- distance variable ;-s 7. The profile may be simplified
1u r t he b y scal I rig th -* v ar i a b Ie s o f th1 rk ne ss arri r efra t
d e' (sP fig u rE 5.
Q(U) - --- ) -----
Th- resulting expressions that quantify the tr-an-,i ton lay-v c r
be der ived fI-o m opt i CalI t heo ry. of i nhomogerieou-s layers. T 1)
I pi tude reduc tion factor- f i S equa I to thFe maqrnlfude O-f 1-
complex quantity F(Y) aind the phase angle V, i- the co'Trl>'pva
<wq o f F (I~'
0, arjF('Y)}
where
Si -dg(u)-e - du (11)
do
TT n, .c o S"',.
n.. 4- n'
(n -i (
cosi = [ - )35
Equation 11 for F(Y) results when the reflection coefficient of
the transition layer is calculated using the Rayleigh-Gans or
Born approximation.I;'' 1. Physically, this amounts to treating
the transition layer as a continuous weakly reflecting region
in which the local differential reflection coefficient is
I n I!/2n, 'where Vn is the gradient of refractive index.
Weakly reflecting meaTs that the total change in refractive index
is small rompared with the average refractive index and that
m iltiple reflections within the layer can be neglected. The
overall reflection coefficient nf the layer is found by integrat-
ing the differential reflection coefficient while incorporating
the appropriate phase factor to account for propagation through
I8
the layer. Scaling the parameters then gives F(C) in equation
Il. Thus, one only needs to know something about the shape of
the refractive index profile g(u) in order to calculate directly
its thickness S from the measured values of f and 0,.. If
knoLledoe about the profile is incomplete, then a fitting
-procedure needs to be used to match the thickness S to the
masured f and 0,
FXPERIMENTAL RESULTS
Measurements were made on various molecular weights of PMMA
dissolvinQ in MEK at 20 0 C. As in figure 3, the presence of the
transitiorn laver is evident by the reduction in the amplitude of
the reflectance oscillations. Also, the endpoint of dissolution
rften ccrS significantly ahead of the next extrapolated maximum
in intensity. Because the reflectance is not observed to deviate
from its sinusoidal variation until the endpoint of dissolution,
it is postulated that this point represents the "leading edqe" of
the transition layer. Once this point reaches the substrat
surface thp rmaining transition layer dissolves away rapidly.
TibIe I lists the measured values of f and Q, for the va rious
molecular weights of PMMA dissolving in MEK. These values are
plotted in figure 6.
..
Thickness Calculations
In order to calculate directly the thickness of the transi-
tion layer it is necessary to know the shape of its refractive
index profile. Unfortunately, the exact shape of this profile is
not known for these types of polymer-solvent systems. However,
it i'- still instrjctiv\,- to calculate the thickness based on some
:imnle model profiles. The profile shapes (figure 7) of linear,
cosine, step-linear, and step-exponential were chosen to approxi-
mate a realistic profiie shape and still allow an analytical
solution to the intearai in Equation 11. The functional form of
these proj I es and the1ir der i vat i ves as they would appear in
equation 11 are listed in Table 2.
The thickness of the transition layer can be calculated to
match the measured values of f and 0i . The linear and cosine
orofiles contain only one adjustable parameter: the normalized
transition layer thickness ', so in genera] the observed values
of f arid 0, cannot both be satisfied at the same time. The
stEp-linear and step-exponential profiles contain two adjustable
parameters: I and the step fraction q. For the latter tteo
profiles it is assumed that the observed endpoint of controlled
uniform dissoltition occurs when the step edge of the transition
layer reaches the substrate surface. The occurrence of these
step-like profiles has been observed on a much larger scale by
Ieberreiter"' in the dissolution of polystyrene.
In principle one could perform the above analysis for any
profile shape, although it might require numerical integration
1 0
and tedious iteration to sblve for the transition layer thick-
ness. In practice it is convenient to use a graphical pro-
cedure. As an example, figure 8 is a chart of transition layer
thickness as a function of phase shift for the step-linear
profile, with '6 and q as adjustable parameters. In this case one
only needs to read off the unique values of normalized trnickness
and step fraction q for measured values of f and C.A
Table 3 lists the calculated thicknesses of the transition
layer of PMMA for the four model profi les. Although not entirely
obvious from the values given in Table 3 the actual physical
thicknesses arTe very close for all four model orofiles. This can
be seen more clearly in figure 9 where the actual profiles have
been plotted on the same scale for one molecular w.,eight of PMMA.
Despite deviations at the tail ends the profiles overlap remark-
ably wel 1. Thus, even though the exact profile shape is not
known, it is reasonable to conclude that the transition layer
thickness calculated by any of the model profiles is not far from
the actual thickness. The same kind of consistency in overall
thickness has been obtained elsewhere by fitting a fami ly f
one-parameter refractive index profiles to photometry data from
the reflection of light from an interface separating the liquid
and vapor phases of a fluid near its critical point.'
.1g
4-,i
CONCLUSIONS
The technique just described is useful for approximating the
thickness of the transition layer for polymers that dissolve with
little or no swelling. Because the calculated thickness does not
depend strongly on the assumed concentration profile shape it is
reasonable that a calculated thickness will closely approximate
the actual thickness. However, for the same reason experimental
measurements are not likely to distinguish among various
theoretical models based on profile shape alone. Application of
this technique to polymer-solvent systems that exhibit both
swelling and dissolution is not as straightforward since these
systems are generally characterized by a non-uniform dissolution
rate and damped reflectance oscillations, i.e. T and f are not
constant. However, at least some qualitative information about
the profile may be obtainable in such cases.
The reflectance of the dissolving film is not observed to
deviate from its sinusoidal shape until the leading edge of the
transition layer reaches the substrate surface. At that time the
remaining transition layer dissolves away rapidly. It appears
that the rate of the dissolution process is governed primarily by
what is happening near the leading edge -- the interface with the
solid polymer -- rather than by what is happening elsewhere in
the transition layer. Although it does not provide direct
detailed information about the shape of the concentration profile
in the transition layer, this technique may be helpful in the
12
development of theoretical models for- the dissolution o zvr
*by reveal ing the lenoth scales over which the o'ssolJut icn -2ce
takes place.
ACKNOWLEDGEMENTS
This work was supported in p'tb the fce O
Researc:h. The cooPerati.orejthe National Research-
Fac iilt\ for Submicron Struct;ures a+. Cornel i -h sL-ns--
* NSF) also is aCknoiOLIe -ged.
REFERENCES
1. A.H. Windle, in "Polymer Permeability," ed. J. Comyn,
Elsevier Applied Science Publishers,1 London (i985).
2. J.S. Vrentas, J.L. Duda, and A.-C. Hou, Journal of App.
Polymer Science, 29, 399 (1984).
3. C. Gostoli, and G.C. Sarti, Polym. Eno. Sci.. 22. 1016
(1982).
4. R.C. Lasky, PhD Thesis, Cornell University (1986).
5. A.C. Quano, in "Polymers in Electronics," ACS Symposium~
Series, 242, ed. T. Davidson, ACS, Washington D.C.(14)
6. D.S. Soong, SPIE Proceedings, 539, ed. L.F. Thompson.
(March, 1985).
7. E.E Parsonage, N.A. Peppas, and P.I. Lee, paper to be
published, Journal of Vacuum Science and Tech., B.
8. F. Rodriguez, P.D. Krasicky, and R.J. Groele, Solid State
Technology, 28, 125 (May, 1985).
'3
9. K. Ueberreiter, in "Diffusion in Polymers," ed. J. Crank
and G.S. Park, Academic Press, New York (1968).
10. A.C. Ouano, Y.O Tu, and J.A. Carothers, in "Structure-
Solubility Relationships in Polymers," ed. F.W. Harris
and R.B. Seymour, Academic Press, New York (1977).
11. P.D. Krasicky, R.J. Groele, and F. Rodriguez, paper to be
published, Chem. Eng. Comm..
12. Lord Rayleigh, Proc. Roy. Soc. A 86, 207 (1912).
13. R. Gans, Ann. Physik 47, 707 (1915).
14. W. Geffcken, Ann. d. Phys. (5) 40, 385 (1941).
15. R. Jacobsson, Progress in Optics 5, 247 (1965).
16. J.S. Huang and W.W. Webb, J. Chem. Phys. 50, 3677 (1969).
TABLE I : Am t tude reduction factor f an phase _i i
ancle O., due to the transition layer for
various molecular weights oF PMM4 dissolvinoin MEK at 200G.
Molecular Weioht
p M_. M_. f (dre)
27 10-3 37 xi0 !.0 4
29 52 1.03_ 61 i.0
35 63 0.9-7
67 13L 0 9397 170 0. 90 i
100 150 o.S ic -0160 320 0.89 P 5180 270 0.88 !5
220 500 0.85 24
220 500 0.87 30
360 950 0.79 30360 950 0.80 33
1000 1400 0.71 35
14
Lztk*S.,..
TABLE 2
MOD.EL TRANSITION LAYER COCNRAT737-4
PROPILE SHAPE g(ei)
i. L 1NEAR 1-u
2. COSINE 0.5(1 + cor ~ 0.-s-r
3. S TEP -LI NE AR q(1 u)- -
4. STEP-EXPONENTIAL e-c - -
-Note - thazt here S(,-) represents the raczi 4 t a
,-ees-r to account T4 or re--Featicn
tra i 0o 1i -- aer e~cness -9 e I sewhc- t
T. -9;-E 3: Calculated transition ',a"v- t-li-:-=
and step fr-action q, 7e =-
mcdel profile shapes. -zs Z. e
MoeflrWeight L in e ar Cosine Se~-1-
0' ' iO- 07:±0 0 0 C
2= 52 0 0Ci0 0
5: 3 0.031 0.04100/ 340.047 0.063 C0!f Z .
Q7170 0.057 0.075 .o CB *-
150 0.060 0.079 0.7. .CC_
0~ 320 0.060 0.079 0 05 C
180 270 0.062 0.083 0 .065 -'4~ C. 0 s C.
20500 0.070 0.093 0.06-3 C.52 0.02--220 500 0.065 0.086 0.057 0.8 0.021 1.350 950 0.08E4 0.11 0.0 7 & 0. 55 0.020 0. 1350 950 0.08E1 0.11 0.07, 6.2 0.022= 0. ZO
1000 1400 0.10 0.13 0.07q .54 0,. 038 0.2
15 Copy avaUiabl. am &"O be tPganit hwly logibl Iseoftaobo
Pw
20
LB
1. Interferometer for monitoring polymer dissolution. Beam from laser. L.is reflected at angle 0 from coated wafer, W, immersed in solvent bath. B.Reflected light is measured with photocell. P.
T-1- I1(I)C " -
a , I
a b
r 0 Time
2. Typical reflected Light intensity trace from polymer film with anegligible transition layer. This example used a personal computerinterfaced with the photocell to reproduce the signal. The period T andamplitudes a and b are used to calculate the dissolution rate.
C -T - T .-
-
a)ab
a.0Time
3. Trace of reflected light intensity when transition laver is present. Theadded features (beyond Fig. 2) are the offset. s, and the phase difference.
teI r e
n ?~(Po lyrne
n ni
((so/venl)z
4. Refractive index.n. profile in the transition laver of thicknesswhere z is distance
! a(u)
O0 u
5. Scaled refractive index profile where u and g(u) are given by equations7 and 8
7
1.0- v vv 010 0' 0
" f -- TV o 0 00 °
0-8 0 Q
0.8 ~o o
v 200
0.6 0 C0
-0 00 1000
0 0
I ,, , II ,I i , * Q0°
0.01 0.05 0.1 0.5 I 2
VT. A.,'e. Molecular Wt., Mw xlO -6
6. Experimental results for P.MMA dissolving in MEk at 20C where f is the
Amplitude reduction fac-or and Ot is the Phase shift angle 'see equations 4
and 5 ).
SL_ neorStpLna
q(u) g(u) ......
0 00 U I 0 U
Cos• S/ep-Eponeni/
g(u) (u)q
I0~ 00 U I 0 U
7. Profiles for the four models of Table 2.
0.0 3000t 60 90
$~~~~~~~. Char ofrdcdtato ae hckes .a ucno h
0.5 A /S Li0ea
0 30 Sep -Epoe 0i0
indisinurdAite rmeauciothe facor.f anfourPmodels.iTheadata.usedhearaetfor q Ao take 9no30oute000 hag in cocetato at the
0.5 8- ' a
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"L413/83/ 01356A/413-2
ABSTRACTS 0 STRIBUTION LIST, 356A
Naval Surface Weapons Center Professor J. K. GillhamAttn: Dr. J. M. Augl, Or. B. Hartman Department of ChemistryWhite Oak Princeton UniversitySilver Spring, Maryland 20910 Princeton, New Jersey 08540Professor Hatsuo Ishida Professor R. S. Roe
Department of Macromolecular Science Department of Materials ScienceCase Western Reserve University and Metallurgical EngineeringCleveland, Ohio 44106 University of Cincinnati
Cincinnati, Ohio 45221
Dr. Robert E. Cohen Professor L. H. SperlingChemical Engineering Department Department of Chemical EngineeringMassachusetts Institute of Technology -Lehigh UniversityCambridge, Massachusetts 02139 Bethlehem, Pennsylvania 18015
Dr. R. S. Porter Professor Brian NewmanDepartment of Polymer Science Department of Mechanics and
and Engineering Materials ScienceUniversity of Massachusetts Rutgers UniversityAmherst, Massachusetts 01002 Piscataway, New Jersey 08854
Professor A. Heeger Dr. C. E. HoyleDepartment of Chemistry Department of Polymer Science
- University of California University of Southern Mississippi* Santa Barbara, California 93106 Hattiesburg, Mississippi 39406
Dr. T. J. Reinhart, Jr., Chief Dr. Stuart L. CooperNonmetallic Materials Division Department of Chemical EngineeringDepartment of the Air Force University of WisconsinAir Force Materials Laboratory (AFSC) Madison, Wisconsin 53706Wright-Patterson AFB, Ohio 45433
Professor J. Lando Professor D. GrubbDepartment of Macromolecular Science Department of Materials Science.Case Western Reserve University and EngineeringCleveland, Ohio 44106 Cornell University
Ithaca, New York 14853
Professor C. Chung Dr. 0. B. CottsDepartment of Materials Engineering SRI InternationalRensselaer Polytechnic Institute 333 Ravenswood AvenueTroy, New York 12181 Menlo Park, California 94205
Professor J. T. Koberstein PLASTECDepartment of Chemical Engineering DRSMC-SCM-0(D), Bldg 351 NPrinceton University Armament Research & DevelopmentPrinceton, New Jersey 08544 Center
Dover, New Jersey 07801
Professor J. H. MagillDepartment of Metallurgical Professor C. H. Wang
and Materials Engineering Department of Chemistry
University of Pittsburgh University of UtahPittsburgh, Pennsylvania 15261 Salt Lake City, Utah 84112
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