CURRICULUM VITAE

SURNAME AND NAME Miranda Castellano, Enrique Alberto

r

E-mail address enrique.miranda@uab.cat

Nationality Spain, Argentina

Birth date 14/12/1963

Academic Position (if the candidate holds a position in a University)

Qualification/Title Professor

University Universitat Autònoma de Barcelona

Department Electronics Engineering

Academic Field Electronics

Academic Discipline Nanoelectronics

Working experience (please use the following table in order to briefly describe the working positions

covered by the candidate)

1989-03

2001-05

2003-05

2003-05

2006-pres

Assistant Professor, Faculty of Engineering, Universidad de Buenos Aires, Argentina

Associate Researcher, National Council of Science and Technology, Argentina

Associate Professor, Faculty of Engineering, Universidad de Buenos Aires, Argentina

Researcher Ramón y Cajal, Universitat Autònoma de Barcelona, Spain

Professor, Escola d’Enginyeria, Universitat Autònoma de Barcelona, Spain

Education and Training (please use the following table to describe Degrees awarded, by only

indicating the information concerning Bachelor’s Degree, Master of Science’s Degree or/and PhD)

Date 1998

Institution which issued the degree Universitat Autònoma de Barcelona

Type of Degree awarded Master in Electronics Engineering

Date 1999

Institution which issued the degree Universitat Autònoma de Barcelona

Type of Degree awarded PhD in Electronics Engineering

Date 2001

Institution which issued the degree Universidad de Buenos Aires

Type of Degree awarded PhD in Physics

EVALUATION FIELDS

1. Scientific Activity

1.1 The three most important outcomes/results of the research activity of the candidate

a) In 2000 we proposed the quantum point-contact model for dielectric breakdown which is based on the

conduction properties of narrow constrictions viewed as mesoscopic systems. Now this model is frequently

used by many authors to explain the electron transport process in resistive switching memories in which

conductance quantization is observed. Some publications in which we developed this outcome:

J. Suñé, E. Miranda, M. Nafria and X. Aymerich, “Modeling the breakdown spots in silicon dioxide

films as point contacts”, Applied Physics Letters75, 959-961 (1999).

E. Miranda, J. Suñe, R. Rodriguez, M. Nafria and X. Aymerich, “A common framework for soft and

hard breakdown in ultrathin gate oxides based on the theory of point contact conduction”,

Microelectronics Engineering 48, 171-174 (1999).

E. Miranda and J. Suñé, “Mesoscopic approach to the soft breakdown failure mode in ultrathin SiO2

films”, Applied Physics Letters 78, 225-227 (2001).

A. Avellán, E. Miranda, D. Schroeder, and W. Krautschneider, "Consistent model for the voltage

and temperature dependence of the soft breakdown conduction mechanism”, Mic. Eng. 72 136-

139 (2004).

E. Miranda, “Mesoscopic approach to progressive breakdown in ultra-thin oxides”, Applied Physics

Letters 91, 053502 (2007).

C. Walczyk, D. Walczyk, T. Schroeder, T. Bertaud, M. Sowińska, M. Lukosius, M. Fraschke, E.

Miranda, C. Wenger, “Impact of temperature on the resistive switching behavior of embedded

HfO2-based RRAM devices”, IEEE Transactions on Electron Devices 58, 3124-3131 (2011).

E. Miranda, “Mesoscopic nature of the electron transport in electroformed metal-insulator-metal

switches”, Journal of Vacuum Science and Technology B 29, 01AD051-01AD055 (2011).

E. Miranda, S. Kano, C. Dou, K. Kakushima, J. Suñé, H. Iwai, “Nonlinear conductance quantization

effects in CeOx/SiO2-based resistive switching devices”, Appl Phys Letters 101, 012910 (2012).

S. Long, X. Lian, C. Cagli, E. Miranda, J. Suñe, “Quantum-size effects in hafnium-oxide resistive

switching”, Appl Phys Lett 102, 183505 (2013)

E. Miranda, A. Mehonic, J. Suñé, A.J. Kenyon, “Multi-channel conduction in redox-based resistive

switch modelled using quantum point contact theory”, Appl Phys Lett 103, 22222904 (2013)

JB Roldán, E Miranda, G González-Cordero, P García-Fernández, et al, Multivariate analysis and

extraction of parameters in resistive RAMs using the Quantum Point Contact model, Journal of

Applied Physics 123 (1), 014501, 2018

b) In 2010 we demonstrated that the techniques of spatial statistics, a branch of classical statistics, can be

used to characterize the distribution of breakdown spots in metal-insulator-metal and metal-insulator-

semiconductor devices. As a result of the application of this technique around ten paper were published in

which it is demonstrated that reliability investigations which required a large number of devices in the past

can be obtained using just a single one. These research work was mainly carried out in collaboration with

Tyndall National Institute, Ireland. Some publications related to this outcome:

E. Miranda, E. O’Connor, and P.K. Hurley, “Exploratory analysis of the breakdown spots spatial

distribution in metal gate/High-K/III-V stacks using functional summary statistics”, Mic. Rel. 50,

1294–1297 (2010).

E. Miranda, E. O’Connor, and P.K. Hurley, “Simulation of the breakdown spots spatial distribution

in high-K dielectrics and model validation using the Spatstat package”, ECS Transactions 33, 557-

562 (2010).

E. Miranda, E. O’Connor, P. K. Hurley, “Application of the quadrat counts method to the analysis of

the spatial breakdown spots pattern in metal gate/MgO/InP structures”, Microelectronic

Engineering88, pp. 448-451 (2011).

E. Miranda, D. Jimenez, J. Suñe et al, “Nonhomogeneous spatial distribution of filamentary leakage

current paths in circular area Pt/HfO2/Pt capacitors”, J Vac Sci Technol B 31, 01A017 (2013)

X. Saura, J. Suñe, S. Monaghan, P.K. Hurley, E. Miranda, “Analysis of the breakdown spot spatial

distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics”, J Appl Phys 114, 154112

(2013)

X. Saura, D. Moix, J. Suñé, P.K. Hurley, E. Miranda, “Direct observation of the generation of

breakdown spots in MIM structures under constant voltage stress”, Mic Rel 53, 1257-1260 (2013)

X. Saura, S. Monaghan, J. Suñé, P. K. Hurley, E. Miranda, “Failure analysis of MIM and MIS

sructures using point-to-event distance and angular probability distributions”, IEEE Transaction on

Materials and Devices Reliability, 14 (2014) 1080-1090

E. Miranda, M. Riccio, G. De Falco, J. Suñé, A. Irace, “Assessing the spatial correlation and

conduction state of breakdown spot patterns in Pt/HfO2/Pt structures using transient infrared

thermography”, Journal of Applied Physics 115 (2014) 174502

X. Saura, M. Riccio, G. De Falco, J. Suñé, A. Irace, E. Miranda, “Study on the spatial generation of

breakdown spots in MIM capacitors with different aspect ratios”, Invited Paper, Facta

Universitatis (2015)

J Muñoz-Gorriz, S Monaghan, K Cherkaoui, J Suñé, PK Hurley, E Miranda, Exploratory study and

application of the angular wavelet analysis for assessing the spatial distribution of breakdown

spots in Pt/HfO2/Pt structures, Journal of Applied Physics 122 (21), 215304, 2017

J Muñoz-Gorriz, S Monaghan, K Cherkaoui, J Suñé, PK Hurley, E Miranda, Spatial analysis of

failure sites in large area MIM capacitors using wavelets, Mic. Eng. 178, 10-16, 2017

J Muñoz-Gorriz, S Monaghan, K Cherkaoui, J Suñé, PK Hurley, E Miranda, Characterization of the

Failure Site Distribution in MIM Devices Using Zoomed Wavelet Analysis, Journal of Electronic

Materials 47 (9), 5033-5038, 2018

c) In 2015 we introduced the concept of hysteron, i.e. the memory map of a device exhibiting hysteretic

properties. The hysteron can be used to construct the conduction characteristics of resistive switching

devices for a compact description suitable for circuit simulators. This is of utmost importance for the

simulation of a large array of devices such as that found in storage-class memories. Some publications

related to this outcome:

J. Blasco, P. Jancovic, K. Frohlich, J. Suñé, E. Miranda, “Modeling of the switching I-V

characteristics in ultrathin (5 nm) atomic layer deposited HfO2 layers using the logistic hysteron”,

Journal of Vac. Sci. Technol., 33 (2014) 01A102 - 01A102-6

J. Blasco, N. Ghenzi, J. Suñé, P. Levy, E. Miranda (Introductory Invited Paper), “Equivalent circuit

modeling of the bistable conduction characteristics in electroformed thin dielectric films”,

Microelectronics Reliability 55 (2015) 1–14

E. Miranda, B. Hudec, J. Suñe, K. Frohlich “Model for the Current–Voltage Characteristic of

Resistive Switches Based on Recursive Hysteretic Operators”, IEEE Electron Device Letters 36,

944-946 (2015)

E. Miranda, “Compact Model for the Major and Minor Hysteretic I–V Loops in Nonlinear

Memristive Devices”, IEEE Transactions on Nanotechnology 14, 787 (2015)

GA Patterson, J Suñé, E Miranda, Voltage-Driven Hysteresis Model for Resistive Switching: SPICE

Modeling and Circuit Applications, IEEE Transactions on Computer-Aided Design of Integrated

Circuits, 2017

GA Patterson, J Suñé, E Miranda, SPICE simulation of memristive circuits based on memdiodes

with sigmoidal threshold functions, International Journal of Circuit Theory and Applications, 46,

39-49, 2017

As the result of these works,

according to Google Scholar,

the h-index of the applicant

exhibits a continuous increase

in the last years

Source:

https://scholar.google.com/citations?hl=en&user=vKLI8ewAAAAJ&view_op=list_works&sortby=pu

bdate

1.2 List of the submitted publications (with a maximum number of 20) in addition to those listed at

point 1.1. For each publication and/or set of publications, the candidate is required to briefly describe

his/her contribution, their scientific/technical significance and individual importance, the overall

impact of the results in the international scientific community.

Other relevant publications of the candidate:

E. Miranda, C. Walczyk, C. Wenger, and T. Schroeder, “Model for the resistive switching effect in

HfO2 MIM structures based on the transmission properties of narrow constrictions”, IEEE

Electron Device Letters 31, 609-611 (2010). Cited by 140. Collaboration Spain-Germany.

S. Long, X. Lian, C. Cagli, E. Miranda, J. Suñe, “Quantum-size effects in hafnium-oxide resistive

switching”, Appl Phys Lett 102, 183505 (2013). Cited by 129. Collaboration Spain-France-

China. E. Miranda and J. Suñé, “Electron transport through broken down ultra-thin SiO2 layers in MOS

devices”, Microelectronics Reliability 44, 1-23 (2004). Cited by 122. Invited paper.

E. Miranda, J. Suñe, R. Rodriguez, M. Nafria and X. Aymerich, “Soft breakdown conduction in

ultrathin (3-5 nm) gate dielectrics”, IEEE Transactions on Electron Devices 47, 82-88 (2000).

Cited by 119. C. Walczyk, D. Walczyk, T. Schroeder, T. Bertaud, M. Sowińska, M. Lukosius, M. Fraschke, E.

Miranda, C. Wenger, “Impact of temperature on the resistive switching behavior of embedded

HfO2-based RRAM devices”, IEEE Transactions on Electron Devices 58, 3124-3131 (2011).

Cited by 118. Collaboration Spain-Germany. S. Long, C. Perniola, L. Cagli, M. Buckley, X. Lian, E. Miranda, L. Pan, X. Liu, J. Suñé, “Voltage

and power-controlled regimen in the progressive unipolar RESET transition of HfO2-based

RRAM”, Scientific Reports 3, 2929 (2013). Cited by 117. Collaboration Spain-France-China.

M. Lanza, G. Bersuker, M. Porti, M. Nafría, and E. Miranda, “Resistive switching in hafnium

dioxide layers: Local phenomenon at grain boundaries”, Appl Phys Lett 101, 193502, 2012. Cited

by 110. Collaboration Spain-EEUU-China. S. Long, X. Lian, C. Cagli, L. Perniola, E. Miranda, M. Liu, and J. Suñé, “A Model for the Set

Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown, IEEE Electron Dev

Lett 34, 2013. Cited by 103. Collaboration Spain-France-China.

E. Miranda, J. Suñe, R. Rodriguez, M. Nafria and X. Aymerich, “A function-fit model for the soft

breakdown failure mode”, IEEE Electron Device Letters 20, 265-267 (1999). Cited by 87.

J. Suñé, G. Mura and E. Miranda, “Are soft breakdown and hard breakdown of ultrathin gate oxides

actually different failure mechanism?”, IEEE Electron Device Letters 21, 167-169 (2000). Cited

by 83

J. Suñé, M. Nafría, E. Miranda, X. Oriols, R. Rodríguez and X. Aymerich, “Failure physics of ultra-

thin SiO2 gate oxides near their scaling limit”, Semicond. Sci. Technol. 15, 445-454 (2000).

Invited paper. E. Miranda, “Mesoscopic approach to progressive breakdown in ultra-thin oxides”, Applied Physics

Letters 91, 053502 (2007). Sole author.

E. Miranda, “A diodelike conduction model for the postbreakdown current in metal-oxide-

semiconductor structures”, Journal of Applied Physics 96, 6940 (2004). Sole author.

E. Miranda, “Compact modeling of the non-linear post-breakdown current in thin gate oxides using

the generalized diode equation”, Microelectronics Reliability 48, 1604-1607 (2008). Sole author.

E. Miranda, “Compact Model for the Major and Minor Hysteretic I–V Loops in Nonlinear

Memristive Devices”, IEEE Transactions on Nanotechnology 14, 787 (2015) Sole author.

Y Li, M Zhang, S Long, J Teng, Q Liu, H Lv, E Miranda, J Suñé, M Liu, Investigation on the

conductive filament growth dynamics in resistive switching memory via a universal Monte Carlo

simulator, Scientific Reports 7 (1), 11204, 2017. Nature publisher. Collaboration Spain-China.

C Pan, E Miranda, MA Villena, N Xiao, X Jing, X Xie, T Wu, F Hui, Y Shi, Model for multi-

filamentary conduction in graphene/hexagonal-boron-nitride/graphene based resistive switching

devices, 2D Materials 4 (2), 025099, 2017. High impact factor journal: 7

A Grossi, E Perez, C Zambelli, P Olivo, E Miranda, R Roelofs, J Woodruff. Impact of the precursor

chemistry and process conditions on the cell-to-cell variability in 1T-1R based HfO 2 RRAM

devices, Scientific reports 8 (1), 11160, 2018. Nature publisher. Collaboration Spain-

Germany-Italy. A Mehonic, AL Shluger, D Gao, I Valov, E Miranda, D Ielmini, A Bricalli, AJ. Kenyon, Silicon

Oxide (SiOx): A Promising Material for Resistance Switching?, Advanced Materials, 1801187,

2018. High impact factor journal: 22. Invited paper.

1.3 Complete list of all the significant publications of the candidate, including those listed at points

1.1 and 1.2

Attached to the end of the Curriculum

2. Coordination of research and technology transfer groups and projects.

Coordination and management of research groups, possibly with international relationships

and collaborations; explicit mention of the number and of the type of PhD and Post-Doc students, of

whom the candidate has been the academic supervisor;

PhD Thesis Supervisor

X. Saura, PhD EE, “Conductive filaments in thin dielectric films”, UAB, 2015

J. Blasco, PhD EE, “Compact modeling of the conduction characteristics of resistive switching

devices”, UAB, 2017

A. Rodríguez, PhD EE, “Post-breakdown conduction in HfO2-based thin films”, UAB, 2018

J. Muñoz, PhD EE, “Experimental study and simulation of conductive filaments in ReRAM devices”,

under course, to be concluded in 2019.

Post-Doc Student

G. Patterson, 2017, Universidad de Buenos Aires, Argentina, UAB

Scientific responsibility (Principal Investigator) of competitive National and International

research projects, awarded through a peer-review process.

Most recent projects:

TEC2017-84321-C4-4-R: FABRICATION, CHARACTERIZATION, SIMULATION, MODELING

AND APPLICATION OF RESISTIVE SWITCHING DEVICES. RS-FACSIMILE 2. Funding

Agency: Ministerio de Economía y Competitividad. 1/1/2018-31/12/2020.

EUROPEAN PROJECT WAKeMeUP: WAFERS FOR AUTOMOTIVE AND OTHER KEY

APPLICATIONS USING MEMORIES AND EMBEDED IN ULSI PROCESSORS. Funding

Agency: European Comission (ENIAC) and the Spanish “Ministerio de Economía y

Competitividad”. 1/1/2018-31/12/2021

SPAIN-UK PROJECT: VP1-2016-019: RESISTIVE SWITCHING SIOX-BASED DEVICES.

Funding Agency: Leverhulme Trust, UK. 2017-2018

ENIAC-JU-621217-PANACHE. PILOT LINE FOR ADVANCED NONVOLATILE MEMORY

TECHNOLOGIES FOR AUTOMOTIVE MICROCONTROLERS, HIGH SECURIY

APPLICATIONS AND GENERAL ELECTRONICS, EU Consortium-Universitat Autònoma de

Barcelona (UAB). 15/12/2013 - 14/12/2017.

TEC2012-32305. DISPOSITIVOS IONICO-ELECTRONICOS BASADOS EN OXIDOS PARA

MEMORIAS NO VOLATILES Y NANOELECTRONICA RECONFIGURABLE. Subprograma de

Proyectos de Investigación Fundamental no orientada 2012. Universitat Autònoma de Barcelona

(UAB). 01/01/2013 - 31/12/2015.

CONES-2010-0005. RELIABILITY OF ULTRATHIN HIGH-K DIELECTRICS FOR

ADVANCED MOS TRANSISTORS, Proyectos CONES, AGAUR, 2011-2013, Cataluña.

International Project Universitat Autònoma de Barcelona (UAB)-Tokyo Institute of Technology

(TIT), 2011-2013.

ACI2009-0853. DEGRADATION AND BREAKDOWN OF METAL GATE/HIGH K/III-V

SEMICONDUCTOR STRUCTURES, International Project España-India, 2009-2012, MCINN,

España. Universitat Autònoma de de Barcelona (UAB)-Indian Institute of Technology (IIT).

WVA-07/W.1/I1828. DEGRADATION AND BREAKDOWN OF METAL GATE/HIGH-K/III-V

STRUCTURES FOR ADVANCED FIELD EFFECT TRANSISTORS, Walton Award, 2008,

Science Foundation Ireland. International Project Universitat Autònoma de de Barcelona (UAB)-

Tyndall National Institute.

3. National and international reputation and professional activity for the scientific community

Editorship of Journals with international reputation (in the role of Editor in Chief – EIC),

editorship of book series, encyclopedias and essays of recognized prestige.

Invited Editor: "The TDDB power-law model – Physics and experimental evidences”, Special Issue of

Microelectronics Reliability, 2005.

Participation in the Editorial Board of Journals with international reputation (in the role of

Associate Editor or equivalent), participation in the Editorial Board of book series, encyclopedias and

essays of recognized prestige.

Since 2002 Member of the Editorial Board of Microelectronics Reliability (Ed. Elsevier, UK).

Since 2018 Associated Editor of Microelectronics Reliability (Ed. Elsevier, UK).

Official research and/or teaching and/or fellowship roles, positions as Scholar/ Visiting

Professor in international highly qualified universities and research centers.

Fellowships

1988 Fellowship for degree students “Solid-state Physics Course”, CONICET-Instituto Balseiro,

Argentina.

1990 Research fellowship for degree students, Faculty of Engineering UBA, Argentina.

1991 Research fellowship for graduates, CONICET, Argentina.

1993 Research fellowship for graduates, Faculty of Engineering UBA, Argentina.

1995 Fellowship INTERCAMPUS from the Spanish International Cooperation Agency (AECI),

Condensed Matter Physics Dept., Universidad de Zaragoza, Spain.

1997 Research fellowship MUTIS from the Spanish International Cooperation Agency (AECI),

Departament d’Enginyeria Electrónica, Universitat Autònoma de Barcelona, Spain.

2000 Re-entry Grant from Fundación Antorchas, Faculty of Engineering UBA, Argentina.

2001 Research fellowship from the German Academic Exchange Service (DAAD), Dept. Electronics

Engineering, Technical University Hamburg-Harburg, Germany.

2002 Post-doctoral research fellowship, Dipartimento di Ingegneria, Universita degli Studi di

Padova, Italy.

2003 Research fellowship RAMON y CAJAL, Universitat Autònoma de Barcelona, Spain.

2004 Research fellowship MATSUMAE International Foundation, Tokyo Institute of Technology, Japan.

2006 Research fellowship TAN CHIN TUAN, Microelectronics Centre, School of Electrical and

Electronic Engineering, Nanyang Technological University, Singapore.

2008 Research fellowship from the AGAUR-Catalan Government, Tyndall National Institute, Cork,

Ireland.

2013 Research fellowship from the Royal Academy of Engineering, University College London, UK.

2014 Research fellowship from the Slovak Academy of Sciences, Inst. of Electrical Engineering, Slovak

Rep.

2015 Research fellowship for Professors SALVADOR DE MADARIAGA from Ministerio de Educación,

Spain, Comisión Nacional de Energía Atómica, Argentina.

2017 Research fellowship from the Slovak Academy of Sciences, Slovak Rep.

2017 Visiting Professor Fellowship from Leverhulme Trust, University College London, UK.

2018 Visiting Professor Fellowship from Leverhulme Trust, University College London, UK.

Visiting Professor

(2009-2012) Dept. Physics, National Comission of Atomic Energy (CNEA), Buenos Aires,

Argentina with support from the Abdus Salam International Centre for Theoretical Physics, Italy.

(2010-2012) IHP (Innovations for High Performance Microelectronics), Germany.

(2010-2012) Dept. Electronics & Electrical Communication Engineering, Indian Institute of

Technology, India, with support from the Ministry of Science and Technology, Spain.

(2011-2013) Iwai’s Lab, Tokyo Institute of Technology, Tokyo, Japan, with support from the

Catalan Agency of Research (AGAUR), Spain.

(2016) Institute of Functional Nano & Soft Materials (FUNSOM), with support from the College of

Nano Science & Technology, Soochow University, China

(2016) “Cesar Milstein” grant from the Ministry of Science and Technology, National Comission of

Atomic Energy (CNEA), Argentina

(2018) Visiting Professor, Doctoral Course (12hs), Facultad Tecnológica Nacional, Regional Buenos

Aires, Argentina.

Prizes and awards awarded to the candidate for his/her scientific activity and project activity

in the Academic Fields, where this is appropriate.

Since 2003 Member of the Distinguished Lecturer Programme of IEEE-Electron Devices Society.

Recipient of WALTON AWARD, Science Foundation Ireland (SFI), Ireland, 2008.

Recipient of DISTINGUISHED VISITING FELLOWSHIP, Royal Academy of Engineering, UK,

2013.

Best conference paper: E. Miranda, P. Falbo, M. Nafría, F. Crupi, “Progressive breakdown dynamics

in HfSiON/SiON gate stacks”, 26th International Conference on Microelectronics, Nis, Serbia, 2008.

Best conference paper: J. Blasco, N. Ghenzi, J. Suñé, P. Levy, E. Miranda, “Equivalent Circuit

Model for the Switching Conduction Characteristics of TiO2-Based MIM Structures”, 29th

International Conference on Microelectronics, Belgrade, Serbia, 2014.

Participation in international conferences, as a distinguished invited speaker; participation in

the scientific committees of International Conferences.

Invited speaker, papers, talks

J. Suñé and E. Miranda (Invited Paper): "Soft and Hard Breakdown of ultrathin SiO2 films",

197th Meeting of the Electrochemical Society, Toronto, Canada (May, 2000).

J. Suñé, M. Nafría, E. Miranda, X. Oriols, R. Rodríguez and X. Aymerich, (Invited Paper): "Failure

physics of ultra-thin SiO2 gate oxides near their scaling limit", Semicond. Science and Technology,

15, 445 (2000).

J. Suñé and E. Miranda (Invited Tutorial): "Thin Gate Oxide Reliability: degradation, statistics and

breakdown modes", IEEE International Reliability Physics Symposium (IRPS’01) Orlando, USA

(May, 2001).

J. Suñé, D. Jiménez and E. Miranda (Invited Paper): "Breakdown modes and breakdown statistics of

ultrathin SiO2 gate oxides", International Journal on High Speed Electronics and Systems, vol. 11,

789-848 (2001).

E. Miranda (Invited talk): "Reliability physics of ultra-thin gate oxides in MOS devices", Electronics

Engineering Dept., Technical University Hamburg-Harburg, Germany, February 2001.

J. Suñé and E. Miranda (Invited Paper): “Ultrathin gate oxide reliability: breakdown modes and

breakdown statistics”, 6th Workshop “Characterization and Reliability of ultrathin silicon oxides”,

Japan, January 2001.

E. Miranda and J. Suñé (Introductory Invited Paper): “Electron transport through broken down ultra-

thin SiO2 layers in MOS devices", Microelectronics Reliability 44, 1-23 (2004).

E. Miranda (Invited talk): "Towards stochastic modeling of progressive breakdown in ultra-thin

SiO2 films", Semiconductor Technology Academic Research Center (STARC), Yokohama, Japan,

January 2004.

E. Miranda (Invited Paper): “Spatial statistics for micro/nanoelectronics and materials science”,

MIEL Conference, Nis, Serbia, 2012.

E. Miranda (Invited talk): “Oxide reliability analysis using spatial statistics”, Spanish Conference on

Electron Devices (CDE 2013), Valladolid, Spain, 2013.

E. Miranda (Invited talk): “Dielectric breakdown in CMOS nanodevices”, Sixht Eurpean SINANO

Summer School, Italy, 2014

J. Blasco and E. Miranda (Introductory Invited Paper): “Equivalent circuit modeling of the bistable

conduction characteristics in electroformed thin dielectric films”, Microelectronics Reliability 55, 1–

14 (2015)

X. Saura and E. Miranda (Invited Paper): “Study on the spatial generation of breakdown spots in

MIM capacitors with different aspect ratios”, Facta Universitatis (2015)

E. Miranda (Invited talk): “Nonlinear memristive equations for resistive switching devices”, 4th

Micro and nano-electronics 2DAYs: Non-Volatile Memories: State of Art in Europe, Sapienza

Universita di Roma, Italy, 2015

E. Miranda (Invited talk): “Introducción a los dispositivos memristivos para físicos e ingenieros”,

Universidad Nacional de San Martín, Argentina, 2016

E. Miranda (Invited talks): “Compact modeling of hysteresis effects in ReRAM devices”, University

of Southampton, University of Hull, University of Liverpool, July 2018.

Invited speaker as IEEE-EDS (Electron Devices Society) Distinguished Lecturer

2004 Frontier Collaborative Research Center, Tokyo Institute of Technology, Tokyo, Japan

2006 Centro de Investigación Instituto Politécnico Nacional (CINVESTAV), México DF, México

2006 Nanyang Technological University, Singapore

2007 Universidad Simón Bolivar, Caracas, Venezuela

2007 IEEE-EDS Section, Buenos Aires, Argentina

2008 IEEE-EDS Minicolloquium, Cancun, Mexico

2010 IEEE-EDS Section, University of La Plata, La Plata, Argentina

2010 IEEE-EDS Section Kharkiv University, Kharkiv, Ukraine

2011 Frontier Collaborative Research Center, Tokyo Institute of Technology, Tokyo, Japan

2012 MIEL’12, Microelectronics Conference, University of Engineering, Nis, Serbia

2013 SEMINATEC, University of Campinas, Campinas, Brazil

2014 IEEE-EDS Student Meeting Universitat Rovira i Virgili, Tarragona, Spain

2015 IEEE-EDS Section Italy, Universita La Sapienza, Roma, Italy

2016 IEEE-EDS Argentine Chapter, University of La Plata, La Plata, Argentina

2017 IEEE-EDS Spain Chapter, Universitat de Barcelona, Barcelona, Spain

2018 IEEE-EDS Brazil Chapter, SBMicro Conference, Bento Goncalvez, Brazil

2018 IEEE-EDS Ecuador Chapter, ECTM Conference, Cuenca, Ecuador

2018 IEEE-EDS Spain Chapter, Universidad de Salamanca, Salamanca, Spain

Committee membership, past & present

INFOS’07,09,11&13 (Insulating Films on Semiconductors Conference-EUROPE),

IRPS’08,09,10,11,15,16,17 (IEEE International Reliability Physics Symposium-EEUU),

ESREF’10-18 (European Symposium on Reliability of Electron Devices),

E-MRS’12 (European Materials Research Symposium),

MIEL’08,10,12&14 (Microelectronics Conference-Serbia),

ESSDERC 2014,15,16,17 (European Solid-State Device Conference),

IPFA’16-18 (Physical and Failure Analysis of Integrated Circuits-Singapore).

Membership of scientific organisations

Senior Member of IEEE-Electron Devices Society, USA

4. Teaching activity

Formal responsibility of Bachelor’s and Master of Science’s degree courses in Italian and/or

foreign universities.

Formal responsibility of PhD courses in Italian and/or foreign universities.

(2014) Professor in the 6th Sinano Summer School, "Physics and Spatial Statistics of

Multifilamentary Conduction Patterns in MIS/MIM Devices", Bertinoro, Universita di

Bologna, Italy

(2015) Visiting Professor, Doctoral Course (15hs): “Oxide Electronics: from conventional to

multifilamentary conduction mechanisms”, Dipartimento di Ingegneria "Enzo Ferrari", with

support from the Università di Modena e Reggio Emilia, Italy.

(2016) Visiting Professor, Doctoral Course (10hs): “Conduction, degradation, and breakdown

of thin oxide films for nano and microelectronics applications”, Dipartimento di Ingegneria

Elettronica, Universita di Cagliari, Italy.

Place and date ___Barcelona, 20/10/2018___

Book Chapters

J. Suñé, D. Jiménez and E. Miranda (Invited Book Chapter): "Breakdown modes and breakdown

statistics of ultrathin SiO2 gate oxides", Selected Topics in Electronics and Systems (Vol. 23), World

Scientific, 2002.

M. Morales, E. Miranda, J.M. van Ruitenbeek (Invited Book Chapter): “Quantum point contact

conduction, in Resistive switching – from fundamentals of nanoionic redox processes to memristive

device applications”, D. Ielmini and R. Waser, eds, Wiley-VCH, 2014

F. Guarin (IBM), E. Miranda (UAB), E. Gutiérrez (INAOE) (Invited Book Chapter): “Advanced device

characterization techniques”, The Institution of Engineering and Technology (IET), 2015

Complete list of publications

1) A. Faigón, A. Straboni, E. Miranda and G. Redin, "Tunneling in Al-Silicion oxynitride-Si

Structures", Thin Solid Films 230, 133-137 (1993).

2) E. Miranda, G. Redin and A. Faigón, "Electronic States Generation at the Silicon Oxynitride-

Silicon Interface in M.O.S. Structures", Journal of Physics-Condensed Matter, Vol. 5, A319-

A320 (1993).

3) E. Miranda, G. Redin and A. Faigón, "An effective-field approach for the Fowler-Nordheim

tunneling current through a metal-oxide-semiconductor charged barrier". Journal of Applied

Physics 82, 1262-1265 (1997).

4) E. Miranda, A. Faigón and F. Campabadal, “Analysis of experimental current oscillations in

MOS structures using a semi-empirical tunneling model”. Solid-State Electronics 41, 67-73

(1997).

5) R. Rodriguez, E. Miranda, M. Nafria, J. Suñe and X. Aymerich, “Two-step stress method for

the dynamic testing of very thin (8 nm) SiO2 films”, Microelectronics Reliability 38, 1127-

1131 (1998).

6) E. Miranda, J. Suñe, R. Rodríguez, M. Nafría and X. Aymerich, "Soft breakdown fluctuation

events in ultra-thin SiO2 layers", Applied Physics Letters 73, 490-493 (1998).

7) E. Miranda, J. Suñe, R. Rodríguez, M. Nafría and X. Aymerich. "Switching events in the soft

breakdown I-t characteristic of ultra-thin SiO2 layers", Microelectronics Reliability 39, 161-

164 (1999).

8) E. Miranda, J. Suñe, R. Rodriguez, M. Nafria, F. Martin and X. Aymerich “Soft breakdown in

ultrathin SiO2 layers: the conduction problem from a new point of view”, Japanese Journal of

Applied Physics 38, 2223-2226 (1999)

9) E. Miranda, J. Suñe, R. Rodriguez, M. Nafria and X. Aymerich, “A function-fit model for the

soft breakdown failure mode”, IEEE Electron Device Letters 20, 265-267 (1999).

10) R. Rodriguez, M. Nafria, E. Miranda, J. Suñe and X. Aymerich, “A new approach to analyze

the degradation and breakdown of thin SiO2 films under static and dynamic electrical stress”,

IEEE Electron Device Letters 20, 317-319 (1999).

11) R. Rodríguez, M. Nafría, E. Miranda, J. Suñé and X. Aymerich, Model-independent

determination of the degradation dynamics of thin SiO2 films”, Microelectronics Reliability

39, 891-895 (1999).

12) J. Suñé, E. Miranda, M. Nafria and X. Aymerich, “Modeling the breakdown spots in silicon

dioxide films as point contacts”, Applied Physics Letters75, 959-961 (1999).

13) E. Miranda, J. Suñe, R. Rodriguez, M. Nafria and X. Aymerich, “Detection and fitting of the

soft breakdown failure mode in MOS structures”, Solid State Electronics 43, 1801-1805

(1999).

14) E. Miranda, J. Suñe, R. Rodriguez, M. Nafria and X. Aymerich, “A common framework for

soft and hard breakdown in ultrathin gate oxides based on the theory of point contact

conduction”, Microelectronics Engineering 48, 171-174 (1999).

15) E. Miranda, J. Suñe, R. Rodriguez, M. Nafria and X. Aymerich, “Soft breakdown conduction

in ultrathin (3-5 nm) gate dielectrics”, IEEE Transactions on Electron Devices 47, 82-88

(2000).

16) J. Suñé, G. Mura and E. Miranda, “Are soft breakdown and hard breakdown of ultrathin gate

oxides actually different failure mechanism?”, IEEE Electron Device Letters 21, 167-169

(2000).

17) R. Rodríguez, E. Miranda, R. Pau, J. Suñé, M. Nafría and X. Aymerich, “Monitoring the

degradation which causes the breakdown of ultrathin (<5nm) SiO2 gate oxides”, IEEE

Electron Device Letters 21, 251-253 (2000).

18) E. Miranda, J. Suñé, R. Rodríguez, M. Nafría and X. Aymerich, “Conduction properties of

breakdown paths in ultrathin gate oxides”, Microelectronics Reliability 40, 691-695 (2000).

19) R. Rodríguez, E. Miranda, R. Pau, J. Suñé, M. Nafría and X. Aymerich, “Relation between

defect generation, stress induced leakage current and soft breakdown in thin (<5nm) oxides”,

Microelectronics Reliability 40, 771-714 (2000).

20) J. Suñé, M. Nafría, E. Miranda, X. Oriols, R. Rodríguez and X. Aymerich, “Failure physics of

ultra-thin SiO2 gate oxides near their scaling limit”, INVITED PAPER Semicond. Sci.

Technol. 15, 445-454 (2000).

21) E. Miranda and J. Suñé, “Mesoscopic approach to the soft breakdown failure mode in ultrathin

SiO2 films”, Applied Physics Letters 78, 225-227 (2001).

22) J. Suñé, D. Jiménez and E. Miranda, "Breakdown modes and breakdown statistics of ultrathin

SiO2 gate oxides", International Journal on High Speed Electronics and Systems, vol. 11, 789-

848 (2001).

23) E. Miranda and J. Suñé, “Modeling the conduction characteristics of broken down gate oxides

in MOS structures”, Microelectronics Reliability 40, 1599-1603 (2000).

24) R. Rodríguez, M. Nafría, E. Miranda, J. Suñé and X. Aymerich, “Analysis of the degradation

and breakdown of thin SiO2 films under static and dynamic tests using a two-step stress

procedure”, IEEE Trans. Electron Devices 47, 2138 (2000).

25) E. Miranda, J. Suñé and X. Oriols, “Linear and nonlinear conduction regimes in broken down

gate oxides”, Journal of Non Crystalline Solids 280, 132-137 (2001).

26) E. Miranda, J. Suñé, R. Rodríguez, M. Nafría and X. Aymerich, “Breakdown and anti-

breakdown events in high-field stressed ultrathin gate oxides”, Solid State Electronics 45,

1327-1332 (2001).

27) R. Rodríguez, E. Miranda, M. Nafría, J. Suñé and X. Aymerichm, “Two-step methodology for

monitoring the gate oxide degradation in MOS devices”, Solid State Electronics 45, 1317-1325

(2001).

28) A. Cester, A. Paccagnella, J. Suñé and E. Miranda, “Post-radiation-induced soft breakdown

conduction properties as a function of temperature”, Applied Physics Letters 79, 1336-1338

(2001).

29) E. Miranda, G. Redin and A. Faigón, “Modeling of the I-V characteristics of high-field

stressed MOS structures using a Fowler-Nordheim-type tunneling expression”, Mic. Rel. 42,

935-941 (2002).

30) E. Miranda, A. Cester and A. Paccagnella, "Logistic model for leakage current in electrical

stressed ultra-thin gate oxides", Electronics Letters 39, 749-750 (2003).

31) E. Miranda and A. Cester, "Degradation dynamics of ultrathin gate oxides subjected to

electrical stress", IEEE Electron Devices Letters 24, 604-606 (2003).

32) E. Miranda, A. Cester and A. Paccagnella, "Stochastic modeling of progressive breakdown in

ultrathin SiO2 films", Applied Physics Letters 83, 5014-5016 (2003).

33) A. Cester, S. Cimino, E. Miranda, A. Paccagnella, G. Ghidini and A. Candelori, "Statistical

model for radiation induced wear-out of ultra-thin gate oxides", IEEE Trans on Nuc Science

50, 2167-2003 (2003).

34) A. Avellán, E. Miranda, D. Schroeder, and W. Krautschneider, "Consistent model for the

voltage and temperature dependence of the soft breakdown conduction mechanism”, Mic. Eng.

72 136-139 (2004).

35) E. Miranda and E. Mallaina, "Single-equation model for low and high voltage soft breakdown

conduction", Microelectronics Reliability 44, 163-166 (2004).

36) E. Miranda and B. Brandala, “Semi-empirical modelling of the post-breakdown current-

voltage characteristics of ultra-thin oxides in MOS structures”, Microelectronics Reliability 45,

175-178 (2004).

37) E. Miranda and J. Suñé, (Invited Paper) “Electron transport through broken down ultra-thin

SiO2 layers in MOS devices”, Microelectronics Reliability 44, 1-23 (2004).

38) E. Miranda, “Method for extracting series resistance in MOS devices using Fowler-Nordheim

plot”, Electronics Letters 40, 1153 (2004).

39) E. Miranda, “A diodelike conduction model for the postbreakdown current in metal-oxide-

semiconductor structures”, Journal of Applied Physics 96, 6940 (2004).

40) E. Miranda, “Analytic model for the post-breakdown conductance of sub-5 nm SiO2 gate

oxides”, IEEE Electron Device Letters 26, 673-675 (2005).

41) A. Avellán, E. Miranda, D. Schroeder and W. Krautschneider, “Physical model for the voltage

and temperature dependence of the soft breakdown current”, Journal of Applied Physics 97,

4104 (2005).

42) E. Miranda, A. Cester, J. Suñé, A. Paccagnella, and G. Ghidini, “Simulation of the time-

dependent breakdown characteristics of heavy ion irradiated gate oxides”, IEEE Trans on

Nuclear Science 52, 1462-1467 (2005).

43) E. Miranda, J. Molina, Y. Kim, and H. Iwai, "Effects of high-field electrical stress on the

conduction properties of ultra-thin La2O3 films", Applied Physics Letters 86, 232104 (2005).

44) E. Miranda, J. Molina, Y. Kim, and H. Iwai, “Degradation of High-K La2O3 gate dielectrics

using progressive electrical stress”, Microelectronics Reliability 45, 1365-1369 (2005).

45) F. Palumbo, E. Miranda, and S. Lombardo, “Accurate assessment of the time-to-failure of

hyper-thin gate oxides subjected to constant electrical stress using a logistic-type model”, Mic.

Eng. 80, 166-169 (2005).

46) R.Vollertsen, E. Miranda, “The TDDB power-law model-Physics and experimental

evidences”, Microelectronics Reliability.2005;45(12):1807-1808.

47) E. Miranda, J. Molina, Y. Kim, and H. Iwai, "Tunneling in sub-5nm La2O3 films deposited by

E-beam evaporation", J. Non-Cryst. Solids 352, 92-97 (2006).

48) E. Miranda, A. Ortiz-Conde, F. García-Sánchez, and E. Farkas-Sosa, “Post-breakdown current

in MOS structures: Extraction of parameters using the IDF method”, IEEE Trans Dev 6, 190-

196 (2006).

49) E. Miranda, Comments on "postbreakdown current in MOS structures: Extraction of

parameters using the integral difference function method", IEEE Transactions on Device and

Materials Reliability.2006;6(4):575.

50) D. Jiménez, X. Cartoixà, E. Miranda, J. Suñé, F. Alveiro Chaves, S. Roche, 2A drain current

model for Schottky-barrier CNT-FETs”, J. of Computational Electronics.2006;5(4):361-364.

51) E. Miranda and H. Iwai, "Post-breakdown conduction in ultra-thin La2O3 gate dielectrics",

IEEE Transactions Devices and Materials Reliability 7, 333-339 (2007).

52) D. Jiménez, X. Cartoixà, E. Miranda, J. Suñé, F. A. Chaves, and S. Roche, “A simple drain

current model for Schottky-barrier carbon nanotube field effect transistors”, Nanotechnology

18, 419001 (2007).

53) E. Miranda, “Mesoscopic approach to progressive breakdown in ultra-thin oxides”, Applied

Physics Letters 91, 053502 (2007).

54) E. Miranda, K. L. Pey, R. Ranjan, and C. H. Tung, “Analysis of the post-breakdown current in

HfO2/TaN/TiN gate stack MOSFETs for low applied biases”, Microelectronics Engineering

84, 1960-1963 (2007).

55) E. Miranda, K. L. Pey, R. Ranjan, and C. H. Tung, “Post-breakdown conduction in ultra-thin

HfO2 films in MOS transistors”, Electronics Letters 43, 1050-1051 (2007).

56) E. Miranda, P. Falbo, M. Nafria, F. Crupi, “Electron transport through electrically induced

nanoconstrictions in HfSiON gate stacks”, Applied Physics Letters 92, 253505 (2008).

57) E. Miranda, “Compact modeling of the non-linear post-breakdown current in thin gate oxides

using the generalized diode equation”, Microelectronics Reliability 48, 1604-1607 (2008).

58) E. Miranda, K. L. Pey, R. Ranjan, and C. H. Tung, “Equivalent circuit model for the gate

leakage current in broken down HfO2/TaN/TiN gate stacks”, IEEE Electron Device Letters 29,

1353-1355 (2009).

59) E. Miranda, J. Tinoco, I. Garduno, M. Estrada, and A. Cerdeira, “Modeling of the leakage

current through broken down TiO2/SiO2 gate stacks”, Thin Solid Films 517, 1710-1714

(2009).

60) E. Miranda, J. Martin-Martinez, E. O’Connor, G. Hughes, P. Casey, et al, Effects of the

electrical stress on the conduction characteristics of metal gate/MgO/InP stacks, Mic Rel. 49,

1052-1055 (2009).

61) E. Miranda, E. O’Connor, G. Hughes, P. Casey, K. Cherkaoui, S. Monaghan, R. Long, D.

O’Connell, P.K. Hurley, “Degradation dynamics and breakdown of MgO gate oxides”, Mic.

Eng. 86, 1715-1717 (2009).

62) C.P. Quinteros, F. Palumbo, F. Campabadal, E. Miranda, “Stress conditions to study the

reliability characteristics of high-k nanolaminates”, ECS Transactions.2009;49(1):161-168.

63) E. Miranda, E. O'Connor, G. Hughes, P. Casey, K. Cherkaoui, S. Monaghan, R.D. Long, D.

O'Connell, P.K. Hurley, “Effects of the semiconductor substrate material on the post-

breakdown current of MgO dielectric layers”, ECS Transactions.2009;25(6):79-86.

64) E. Miranda, E. O’Connor, G. Hughes, P. Casey, K. Cherkaoui, et al., “Electrical

characterization of the soft breakdown failure mode in MgO layers”, Appl. Phys. Lett. 95,

012901 (2009).

65) E. Miranda, E. O’Connor, and P.K. Hurley, “Exploratory analysis of the breakdown spots

spatial distribution in metal gate/High-K/III-V stacks using functional summary statistics”,

Mic. Rel. 50, 1294–1297 (2010).

66) J. Garcia-Garcia, E. Miranda, C.S. Martínez-Cisneros, J. Alonso, L. Viladoms, P. de Mariscal,

“Porosity enhancement by the utilization of screening patterns in electro-perforated paper

webs” Journal of Electrostatics.2010;68(2):196-199.

67) E. Miranda, E. O’Connor, and P.K. Hurley, “Simulation of the breakdown spots spatial

distribution in high-K dielectrics and model validation using the Spatstat package”, ECS

Transactions 33, 557- 562 (2010).

68) E. Miranda, C. Walczyk, C. Wenger, and T. Schroeder, “Model for the resistive switching

effect in HfO2 MIM structures based on the transmission properties of narrow constrictions”,

IEEE Electron Device Letters 31, 609-611 (2010).

69) D. Jiménez, E. Miranda, A. Godoy, “Analytic Model for the Surface Potential and Drain

Current in Negative Capacitance Field-Effect Transistors”, IEEE Transactions on Electron

Devices 57, 2405-2409 (2010).

70) F. Palumbo, E. Miranda, K. Cherkaoui, P.K. Hurley, M. Negara, “Effects of high-energy ion

irradiation on the conduction characteristics of HfO2-based MOSFET devices”, ECS

Transactions 31, 327-332 (2010).

71) J. Suñé, S. Tous, E. Miranda, “Gate stack insulator breakdown when the interface layer

thickness is scaled toward zero”, Applied Physics Letters 97, 213503 (2010).

72) E. Miranda, D. Jimenez, J. Suñe, “Progressive breakdown dynamics and entropy production in

ultrathin SiO2 films”, Appl Phys Lett 98, 253504 (2011)

73) C. Martínez-Domingo, X. Saura, A. Conde, D. Jiménez, E. Miranda, et al, “Initial leakage

current related to extrinsic breakdown in HfO2/Al2O3 nanolaminate ALD dielectrics” Mic.

Eng. 88, 1380-1383 (2011).

74) C. Garzon, E. Miranda, C. Martinez-Cisneros, et al, “Effect of the electric discharge

confinement on the perforation density of porous materials”, IEEE Trans Industry Appl, 47,

2367-2373 (2011).

75) F. Lime, R. Ritzenthaler, M. Ricoma, F. Martinez, F. Pascal, E. Miranda, O. Faynot, B.

Iñiguez, “A physical compact DC drain current model for long-channel undoped ultra-thin

body (UTB) SOI and asymmetric double-gate (DG) MOSFETs with independent gate

operation”, Solid-state Electronics 57, 61-66 (2011).

76) F. Palumbo, C. Quinteros, F. Campabadal, J. M. Rafí, M. Zabala, E. Miranda, “Soft

breakdown in irradiated high-κ nanolaminates”, Microelectronic Engineering, vol. 88, 1425-

1427 (2011).

77) E. Miranda, C. Mahata, T. Das, C. K. Maiti, “Model for the leakage current decay in high-

field stressed Al/HfYOx/GaAs structures”, Microelectronic Engineering 88, 1295-1297

(2011).

78) E. Miranda, C. Mahata, T. Das, C. K. Maiti, “An extension of the Curie-von Schweidler law

for the leakage current decay in MIS structures including progressive breakdown”,

Microelectronics Reliability 51, 1535-1539 (2011).

79) E. Miranda, F. Palumbo, “Analytic expression for the Fowler–Nordheim V– I characteristic

including the series resistance effect”, Solid-state Electronics 61, 93-95 (2011).

80) E. Miranda, E. O’Connor, P. K. Hurley, “Application of the quadrat counts method to the

analysis of the spatial breakdown spots pattern in metal gate/MgO/InP structures”,

Microelectronic Engineering88, pp. 448-451 (2011).

81) F. Palumbo, E. Miranda, G. Ghibaudo, V. Jousseaume, “Model and fitting results for the

filamentary conduction in MIM resistive switching devices”, ECS Transactions, 187-193

(2011).

82) E. Miranda, C. Garzón, C. Martínez-Cisneros, J. Alonso, J. García-García, “Analysis of

electroperforated materials using the quadrat counts method”, Journal of Physics: Conference

Series. 2011;301(1):[012049].

83) C. Garzón, E. Miranda, C. Martínez-Cisneros, J. Alonso, J. García-García, “Method for

improving the electrostatics perforation pattern using power controlled discharges”, Journal of

Physics: Conference Series. 2011;301(1):[012016].

84) C. Walczyk, D. Walczyk, T. Schroeder, T. Bertaud, M. Sowińska, M. Lukosius, M. Fraschke,

E. Miranda, C. Wenger, “Impact of temperature on the resistive switching behavior of

embedded HfO2-based RRAM devices”, IEEE Transactions on Electron Devices 58, 3124-

3131 (2011).

85) S. Tous, E. Wu, E. Miranda, J. Suñé, “A strong analogy between the dielectric breakdown of

high-K gate stacks and the progressive breakdown of ultrathin oxides”, Journal of Applied

Physics 109, 124115 (2011)

86) F. Palumbo, E. Miranda, “Modeling of the tunneling current in MOS devices after proton

irradiation using a nonlinear series resistance correction”, IEEE Transactions on Nuclear

Science 58, 770-775 (2011).

87) T. Das, C. Mahata, C.K. Maiti, E. Miranda, et al, “Effects of Ti incorporation on the interface

properties and band alignment of HfTaOx thin films on sulfur passivated GaAs”, Appl. Phys.

Letters 98, 022901 (2011).

88) C. Walczyk, C. Wenger, D. Walczyk, M. Lukosius, I. Costina, M. Fraschke, J. Dabrowski, E.

Miranda, T. Schroeder, “On the role of Ti adlayers for resistive switching in HfO2-based

metal-insulator-metal structures”, Journal of Vacuum Science and Technology B 29,

01AD021-01AD027 (2011).

89) E. Miranda, “Mesoscopic nature of the electron transport in electroformed metal-insulator-

metal switches”, Journal of Vacuum Science and Technology B 29, 01AD051-01AD055

(2011).

90) E. Miranda, S. Kano, C. Dou, K. Kakushima, J. Suñé, H. Iwai, “Nonlinear conductance

quantization effects in CeOx/SiO2-based resistive switching devices”, Applied Physics Letters

101, 012910 (2012).

91) S. Kano, C. Dou, M. Hadi, K. Kakushima, P. Ahmet, A. Nishiyama, N. Sugii, K. Tsutsui, Y.

Kataoka, K. Natori, E. Miranda, H. Iwai. “Influence of electrode materials on CeOx based

resistive switching ECS Transactions”.2012;44(1):439-443.

92) F. Palumbo, E. Miranda, G. Ghibaudo, V. Jousseaume, “Formation and characterization of

filamentary current paths in HFO2-based resistive switching structures”, IEEE Electron

Device Letters.2012; 33(7):1057-1059:[6194991].

93) E. Miranda, C. Garzón, C. Martínez-Cisneros, J. Alonso, J. García-García, “Detection and

characterization of the spatial inhibition potential in electroperforated sheet materials”, J. of

Electrostatics 70, 264-268 (2012).

94) A. Conde, C. Martínez, D. Jiménez, E. Miranda, et al, “Modeling the breakdown statistics of

Al2O3/HfO2 nanolaminates grown by atomic-layer-deposition”, Solid-State Electronics 71,

48-52 (2012).

95) C. Mahata, S. Mallik, T. Das, C.K. Maiti, G. Dalapati, C, Tan, C. Chia, E. Miranda, “Atomic

layer deposited (TiO2)(Al2O3)/InGa as gate stacks for MOSFET applications”, Applied

Physics Letters 100, 062905 (2012).

96) E. Miranda, C. Mahata, T. Das, J. Suñé, C.K. Maiti, “Degradation and breakdown

characteristics of Al/HfYO x/GaAs capacitors”, Thin Solid Films 520, 2956-2959 (2012).

97) E. Miranda, D. Jimenéz, J. Suñé, “The quantum point-contact memristor”, IEEE Electron Dev

Lett 33, 1474-1476 (2012).

98) E. Miranda, C. Mahata, T. Das, J. Suñé, C.K. Maiti, “Degradation analysis and

characterization of multifilamentary conduction patterns in TiO2/Al2O3 nanolaminates”,

Journal of Applied Physics Appl Phys 112, 064113 (2012).

99) E. Miranda, T. Kawanago, K. Kakushima, J. Suñé, H. Iwai, “Analysis and modeling of the

gate leakage current in advanced nMOSFET devices with severe G-to-D breakdown”, Mic.

Rel. 52, 1909-1912 (2012).

100)M. Lanza, G. Bersuker, M. Porti, M. Nafría, and E. Miranda, “Resistive switching in hafnium

dioxide layers: Local phenomenon at grain boundaries”, Appl Phys Lett 101, 193502, 2012

101)E. Miranda, T. Kawanago, K. Kakushima et al. “Modeling of the output characteristics of

advanced n-MOSFETs after a severe gate-to-channel dielectric breakdown”, Mic Eng 109,

322-325 (2013).

102)S. Long, X. Lian, C. Cagli, E. Miranda et al, “A Model for the Set Statistics of RRAM

Inspired in the Percolation Model of Oxide Breakdown”, IEEE Elect Dev Lett 34, 999-1001

(2013)

103)E. Miranda, T. Kawanago, Takamasa, K. Kakushima, H. Iwai, “Analysis and Simulation of

the Postbreakdown I-V Characteristics of n-MOS Transistors in the Linear Response Regime”

IEEE Elect Dev Lett 34, 798-800 (2013)

104)S. Long, X. Lian, C. Cagli, E. Miranda, J. Suñe, “Quantum-size effects in hafnium-oxide

resistive switching”, Appl Phys Lett 102, 183505 (2013)

105)V. Maccaronio, F. Crupi, L.M. Procel, L. Goux, E. Simoen, L. Trojman, E. Miranda, “DC and

low-frequency noise behavior of the conductive filament in bipolar HfO2-based resistive

random access memory”, Microelectronic Engineering.2013;107:1-5.

106)S. Long, L. Xiaojuan, T. Ye, E. Miranda, J. Suñe, “Cycle-to-Cycle Intrinsic RESET Statistics

in HfO2-Based Unipolar RRAM Devices”, IEEE Elect Dev Lett 34, 623-625 (2013)

107)E. Miranda, S. Kano, C. Dou, J. Suñe, H. Iwai, “Effect of an ultrathin SiO2 interfacial layer

on the hysteretic current-voltage characteristics of CeOx-based metal-insulator-metal

structures”, Thin Solid Films 533, 38-42 (2013)

108)X. Saura, E. Miranda, D. Jimenez, J. Suñe, “Threshold Switching and Conductance

Quantization in Al/HfO2/Si(p) Structures”, Jap J Appl 52, UNSP 04CD06 (2013)

109)E. Miranda, D. Jimenez, J. Suñe et al, “Nonhomogeneous spatial distribution of filamentary

leakage current paths in circular area Pt/HfO2/Pt capacitors”, J Vac Sci Technol B 31, 01A017

(2013)

110)X. Saura, J. Suñe, S. Monaghan, P.K. Hurley, E. Miranda, “Analysis of the breakdown spot

spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics”, J Appl Phys

114, 154112 (2013)

111) X. Saura, D. Moix, J. Suñé, P.K. Hurley, E. Miranda, “Direct observation of the generation

of breakdown spots in MIM structures under constant voltage stress”, Mic Rel 53, 1257-1260

(2013)

112)E. Miranda, K. Kano, K. Kakushima, C. Dou, J. Suñé, H. Iwai, “Effect of an ultrathin SiO2

interfacial layer on the hysteretic current-voltage characteristics of CeOx-based MIM

structures”, Thin Solid Films 533, 38-42 (2013)

113)S. Long, C. Perniola, L. Cagli, M. Buckley, X. Lian, E. Miranda, L. Pan, X. Liu, J. Suñé,

“Voltage and power-controlled regimen in the progressive unipolar RESET transition of

HfO2-based RRAM”, Scientific Reports 3, 2929 (2013)

114)E. Miranda, A. Mehonic, J. Suñé, A.J. Kenyon, “Multi-channel conduction in redox-based

resistive switch modelled using quantum point contact theory”, Appl Phys Lett 103, 22222904

(2013)

115)D. Jiménez, E. Miranda, A. Tsurumaki-Fukuchi, H. Yamada, J. Suñé, A. Sawa, “Multilevel

recording in Bi-deficient Pt/BFO/SRO heretostructures based on ferroelectric resistive

switching targeting high-density information storage in nonvolatile memories”, Appl Phys Lett

103, 2635012 (2013)

116)X. Saura, X. Lian, D. Jiménez, E. Miranda, X. Borrisé, F. Campabadal, J. Suñé, “Field-effect

control of breakdown paths in HfO2 based MIM structures”, Microelectronics Reliability 53

(2013) 1346–1350

117)S. Long, X. Lian, C. Cagli, L. Perniola, E. Miranda, M. Liu, and J. Suñé, “A Model for the

Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown, IEEE Electron

Dev Lett 34, 2013

118)X. Saura, S. Monaghan, J. Suñé, P. K. Hurley, E. Miranda, “Failure analysis of MIM and MIS

sructures using point-to-event distance and angular probability distributions”, IEEE

Transaction on Materials and Devices Reliability, 14 (2014) 1080-1090

119)X. Lian, X. Cartoixà, E. Miranda, L. Perniola, R. Rurali, S. Long, M. Liu, J. Suñé, “Multi-

scale quantum point contact model for filamentary conduction in resistive random access

memories devices”, Journal of Applied Physics. 2014;115(24).

120)J. Blasco, H. Castán, H. García, S. Dueñas, J. Suñé, M. Kemell, K. Kukli, M. Ritala, M.

Leskelä, E. Miranda, “Single-parameter model for the post-breakdown conduction

characteristics of HoTiOx-based MIM capacitors”, Microelectronics Reliability 54 (2014)

1707–1711

121)E. Miranda, M. Riccio, G. De Falco, J. Suñé, A. Irace, “Assessing the spatial correlation and

conduction state of breakdown spot patterns in Pt/HfO2/Pt structures using transient infrared

thermography”, Journal of Applied Physics 115 (2014) 174502

122)J. Blasco, P. Jancovic, K. Frohlich, J. Suñé, E. Miranda, “Modeling of the switching I-V

characteristics in ultrathin (5 nm) atomic layer deposited HfO2 layers using the logistic

hysteron”, Journal of Vac. Sci. Technol., 33 (2014) 01A102 - 01A102-6

123)J. Blasco, N. Ghenzi, J. Suñé, P. Levy, E. Miranda (Introductory Invited Paper), “Equivalent

circuit modeling of the bistable conduction characteristics in electroformed thin dielectric

films”, Microelectronics Reliability 55 (2015) 1–14

124)J. Blasco, N. Ghenzi, J. Suñé, P. Levy, E. Miranda, “Modeling of the hysteretic I-V

characteristics of TiO2-based resistive switches using the generalized diode equation”,

Electron Dev Lett 35 (2014) 390-392

125)E. Miranda, D. Jiménez, A. Tsurumaki-Fukichi, J. Blasco, H. Yamada, J. Suñé, A. Sawa,

“Modeling of hysteretic Schottky diode-like conduction in Pt/BiFeO3/SrRuO3 switches”,

Applied Physics Letters 105, 082904 (2014)

126)M. Zhang, S. Long, G. Wang, X. Xu, Y. Li, Qi Liu, H. Lv, X. Lian, E. Miranda, J. Suñé, and

M. Liu, “Set statistics in conductive bridge random access memory device with Cu/HfO2/Pt

Structure”, Applied Physics Letters 105, 193501 (2014)

127)X. Lian, E. Miranda, S. Long, L. Perniola, M. Liu, J. Suñé, “Three-state resistive switching in

HfO2-based RRAM”, Solid-State Electronics 98 (2014) 38–44

128)Y. Shi, Y. Ji, F. Hui, V. Iglesias, M. Porti, M. Nafria, E. Miranda, G. Bersuker, M. Lanza,

“Elucidating the origin of resistive switching in ultrathin hafnium oxides through high spatial

resolution tools”, ECS Transactions.2014;64(14):19-28.

129)M. A. Villena, M. B. González, F. Jiménez-Molinos, F. Campabadal, J. B. Roldán, J. Suñé, E.

Romera, and E. Miranda, “Simulation of thermal reset transitions in resistive switching

memories including quantum effects”, Journal of Applied Physics 115, 214504 (2014)

130)M. A. Villena, J B Roldán, F Jimenez-Molinos, J Suñé, S Long, E. Miranda and M Liu, “A

comprehensive analysis on progressive reset transitions in RRAMs”, J. Phys. D: Appl. Phys.

47 205102 (2014)

131)M. Zhang, S. Long, G. Wang, X. Xu, Y. Li, Q. Liu, H. Lv, X. Lian, E. Miranda, J. Suñé; et al.

“Set statistics in conductive bridge random access memory device with Cu/HfO2/Pt structure”,

Applied Physics Letters.2014;105(19).

132)M. Zhang, S. Long, E. Miranda et al, “Statistical characteristics of reset switching in

Cu/HfO2/Pt resistive switching memory”, Nanoscale Research Letters 9, 694 (2014)

133)E. Miranda, A. Mehonic, J. Blasco, J. Suñé, and A.J. Kenyon, “Multiple Diode-Like

Conduction in Resistive Switching SiOx-based MIM Devices”, IEEE Transactions on

Nanotechnology 14 , 15 – 17 (2015)

134)A. Rodriguez, M.B. Gonzalez, F. Campabadal, J. Suñé, and E. Miranda, “Breakdown time

statistics of successive failure events in constant voltage-stressed Al2O3/HfO2

nanolaminates”, Mic Engineering (2015)

135)X. Saura, M. Riccio, G. De Falco, J. Suñé, A. Irace, E. Miranda, “Study on the spatial

generation of breakdown spots in MIM capacitors with different aspect ratios”, Invited Paper,

Facta Universitatis (2015)

136)R. Ortega-Hernandez, M. Coll, J. Gonzalez-Rosillo, A. Palau, X. Obradors, E. Miranda, T.

Puig, J. Suñe, “Resistive switching in CeO2/La0.8Sr0.2MnO3 bilayer for non-volatile memory

applications”, Microelectronic Engineering 147, 37–40 (2015)

137)A. Grossi, D. Walczyk, C. Zambelli, E. Miranda et al, “Impact of Intercell and Intracell

Variability on Forming and Switching Parameters in RRAM Arrays”, IEEE Transactions on

Electron Devices 62, 2502-2509 (2015)

138)E. Miranda, B. Hudec, J. Suñe, K. Frohlich “Model for the Current–Voltage Characteristic of

Resistive Switches Based on Recursive Hysteretic Operators”, IEEE Electron Device Letters

36, 944-946 (2015)

139)E. Miranda, “Compact Model for the Major and Minor Hysteretic I–V Loops in Nonlinear

Memristive Devices”, IEEE Transactions on Nanotechnology 14, 787 (2015)

140)H. Castán, H. García, S. Dueñas, L. Bailón, E. Miranda, K. Kukli, M. Kemell, M. Ritala, M.

Leskelä, “Conduction and stability of holmium titanium oxide thin films grown by atomic

layer deposition”, Thin Solid Films 591, 55–59 (2015)

141)P. Lorenzi, R. Rao, F. Irrera, J. Suñé and E. Miranda, “A thorough investigation of the

progressive reset dynamics in HfO2-based resistive switching structures”, Appl. Phys. Lett.

107, 113507 (2015)

142)A. Rodríguez, M.B. Gonzalez, F. Campabadal, J. Suñé, E. Miranda, “Electrical

characterization of multiple leakage current paths in HfO2/Al2O3-based nanolaminates”,

Microelectronics Reliability (2015)

143)A. Rodriguez, M.B. Gonzalez, E. Miranda, F. Campabadal, J. Suñe, “Temperature and

polarity dependence of the switching behavior of Ni/HfO-based RRAM devices”,

Microelectronic Engineering 147:75-78 (2015)

144) A Rodriguez, MB Gonzalez, F Campabadal, J Suñé, E Miranda, “Breakdown time statistics

of successive failure events in constant voltage-stressed Al2O3/HfO2 nanolaminates”,

Microelectronic Engineering 147, 85-88 (2015)

145) M Zhang, S Long, Y Li, Q Liu, H Lv, E Miranda, J Suñé, M Liu, “Analysis on the filament

structure evolution in reset transition of Cu/HfO2”, Nanoscale Research Letters 11 (1), 1-6

(2016)

146) C Vaca, MB González, H Castán, H García, S Dueñas, F Campabadal, E. Miranda, “Study

from cryogenic to high temperatures of the high-and low-resistance-state currents of ReRAM

in HfO2–Si capacitors”, IEEE Transactions on Electron Devices 63 (5), 1877-1883 (2016)

147) H García, M Gonzalez, C Vaca, H Castán, S Dueñas, F Campabadal, E. Miranda, “Electrical

properties and nanoresistive switching of Ni-HfO2-Si capacitors”, ECS Transactions 72 (2),

335-342 (2016)

148) M Zhang, G Wang, S Long, Z Yu, Y Li, D Xu, H Lv, Q Liu, E Miranda, “A physical model

for the statistics of the set switching time of resistive RAM measured with the width-adjusting

pulse operation method”, IEEE Electron Device Letters 36 (12), 1303-1306 (2016)

149)A. Grossi, C. Zambelli, P. Olivo, E. Miranda, V. Stikanov, C. Walczyk, C. Wenger,

“Electrical characterization and modeling of pulse-based forming techniques in RRAM

arrays”, Solid-State Electronics 115:17-25 (2016)

150) A Rodriguez-Fernandez, J Suñé, E Miranda, MB González, Function-fit model for the rate of

conducting filament generation in constant voltage-stressed multilayer oxide stacks. Journal of

Vacuum Science & Technology B 35, 01A108, 2017

151) C. Pan, Y. Ji, N. Xiao, F. Hui, K. Tang, Y. Guo, X. Xie, F. M Puglisi, L. Larcher, E.

Miranda, L. Jiang, Y. Shi, I. Valov, P. McIntyre, R. Waser, M. Lanza, Coexistence of

Grain‐Boundaries‐Assisted Bipolar and Threshold Resistive Switching in Multilayer

Hexagonal Boron Nitride, Advanced Functional Materials, 2017

152)J Muñoz-Gorriz, S Monaghan, K Cherkaoui, J Suñé, PK Hurley, E Miranda, Exploratory

study and application of the angular wavelet analysis for assessing the spatial distribution of

breakdown spots in Pt/HfO2/Pt structures, Journal of Applied Physics 122 (21), 215304, 2017

153) MA Villena, JB Roldán, F Jiménez-Molinos, E Miranda, J Suñé, M Lanza, A physical model

for RRAM devices simulation, Journal of Computational Electronics 16 (4), 1095-1120, 2017

154)GA Patterson, J Suñé, E Miranda, Voltage-Driven Hysteresis Model for Resistive Switching:

SPICE Modeling and Circuit Applications, IEEE Transactions on Computer-Aided Design of

Integrated Circuits, 2017

155)JC Gonzalez-Rosillo, R Ortega-Hernandez, J Jareño-Cerulla, E Miranda, et al, Volume

Resistive Switching in metallic perovskite oxides driven by the Metal-Insulator Transition,

Journal of Electroceramics 39 (1-4), 185-196, 2017

156)Y Li, M Zhang, S Long, J Teng, Q Liu, H Lv, E Miranda, J Suñé, M Liu, Investigation on the

conductive filament growth dynamics in resistive switching memory via a universal Monte

Carlo simulator, Scientific Reports 7 (1), 11204, 2017

157)A Rodriguez-Fernandez, C Cagli, L Perniola, J Suñé, E Miranda, Identification of the

generation/rupture mechanism of filamentary conductive paths in ReRAM devices using oxide

failure analysis, , Microelectronics Reliability 76, 178-183, 2017

158)S Dueñas, H Castán, H García, ÓG Ossorio, LA Domínguez, E Miranda, Experimental

Observation of Negative Susceptance in HfO 2-Based RRAM Devices, IEEE Electron Device

Letters 38 (9), 1216-1219, 2017

159)A Rodríguez-Fernandez, S Aldana, F Campabadal, J Suñé, E Miranda, et al, Resistive

Switching with Self-Rectifying Tunability and Influence of the Oxide Layer Thickness in

Ni/HfO 2/n+-Si RRAM Devices, IEEE Transactions on Electron Devices 64 (8), 3159-3166,

2017

160)A Rodriguez-Fernandez, C Cagli, L Perniola, J Suñé, E Miranda, Effect of the voltage ramp

rate on the set and reset voltages of ReRAM devices, Microelectronic Engineering 178, 61-65

161)S Dueñas, H Castán, H García, E Miranda, MB Gonzalez, F Campabadal, Study of the

admittance hysteresis cycles in TiN/Ti/HfO 2/W-based RRAM devices, Microelectronic

Engineering 178, 30-33, 2017

162)J Muñoz-Gorriz, S Monaghan, K Cherkaoui, J Suñé, PK Hurley, E Miranda, Spatial analysis

of failure sites in large area MIM capacitors using wavelets, Mic. Eng. 178, 10-16, 2017

163)E Miranda, W Román Acevedo, D Rubi, U Lüders, P Granell, J Suñé, P. Levy, Modeling of

the multilevel conduction characteristics and fatigue profile of Ag/La1/3Ca2/3MnO3/Pt

structures using a compact memristive approach, Journal of Applied Physics 121 (20), 205302,

2017

164)C Pan, E Miranda, MA Villena, N Xiao, X Jing, X Xie, T Wu, F Hui, Y Shi, Model for multi-

filamentary conduction in graphene/hexagonal-boron-nitride/graphene based resistive

switching devices, 2D Materials 4 (2), 025099, 2017

165)S Pazos, F Aguirre, E Miranda, S Lombardo, F Palumbo, Comparative study of the

breakdown transients of thin Al2O3 and HfO2 films in MIM structures and their connection

with the thermal properties of materials, Journal of Applied Physics 121 (9), 094102, 2017

166)GA Patterson, J Suñé, E Miranda, SPICE simulation of memristive circuits based on

memdiodes with sigmoidal threshold functions, International Journal of Circuit Theory and

Applications, 46, 39-49, 2017

167)JB Roldán, E Miranda, G González-Cordero, P García-Fernández, et al, Multivariate analysis

and extraction of parameters in resistive RAMs using the Quantum Point Contact model,

Journal of Applied Physics 123 (1), 014501, 2018

168) B. Wang, N. Xiao, C. Pan, Y. Shi, F. Hui, X. Jing, K. Zhu, B. Guo, M. Villena, E. Miranda,

M. Lanza, Experimental Observation and Mitigation of Dielectric Screening in Hexagonal

Boron Nitride Based Resistive Switching Devices. Journal Crystal Research and Technology,

Vol 53, 1800006, 2018

169)A Rodriguez-Fernandez, C Cagli, J Sune, E Miranda, Switching Voltage and Time Statistics

of Filamentary Conductive Paths in HfO2-Based ReRAM Devices, IEEE Electron Device

Letters 39 (5), 656-659, 2018

170)A Mehonic, AL Shluger, D Gao, I Valov, E Miranda, D Ielmini, A Bricalli, AJ. Kenyon,

Silicon Oxide (SiOx): A Promising Material for Resistance Switching?, Advanced Materials,

1801187, 2018

171) A Grossi, E Perez, C Zambelli, P Olivo, E Miranda, R Roelofs, J Woodruff. Impact of the

precursor chemistry and process conditions on the cell-to-cell variability in 1T-1R based HfO

2 RRAM devices, Scientific reports 8 (1), 11160, 2018

172) A Rodriguez-Fernandez, C Cagli, L Perniola, E Miranda, J Suñé, Characterization of HfO2-

based devices with indication of second order memristor effects, Mic Eng 195, 101-106, 2018

173) J Muñoz-Gorriz, S Monaghan, K Cherkaoui, J Suñé, PK Hurley, E Miranda, Characterization

of the Failure Site Distribution in MIM Devices Using Zoomed Wavelet Analysis, Journal of

Electronic Materials 47 (9), 5033-5038, 2018