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LaMaVLaMaV
Crystal Growth in Glass Crystal Growth in Glass Forming LiquidsForming Liquids
MarcioMarcio Luis Ferreira Luis Ferreira NascimentoNascimentoEdgar Edgar DutraDutra ZanottoZanotto
Federal University of São Carlos, BrazilFederal University of São Carlos, BrazilVitreous Materials LaboratoryVitreous Materials Laboratory
www.lamav.ufscar.brwww.lamav.ufscar.br
Presented at the IMI-NFG US-Japan Winter School , Jan 14, 2008 and Reproduced by the International Materials Institute for Glass for use by the glass research community; Available at: www.lehigh.edu/imi
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•• IntroductionIntroduction•• Growth models?Growth models?•• Normal GrowthNormal Growth•• Screw Dislocation GrowthScrew Dislocation Growth•• Surface Nucleation GrowthSurface Nucleation Growth•• Some ExamplesSome Examples•• Experimental ResultsExperimental Results•• AcknowledgmentsAcknowledgments•• BibliographyBibliography
Outline
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i) The undercoolingundercooling, which is a measure of the driving force for crystal growth;
ii) The site factor, which is the fraction of sites on the crystal/ glass interface that can incorporate molecules;
iii) The effective diffusivity in the crystal/liquid interface, which is a measure of the resistance to molecular motion and rearrangement.
Crystal growth rates depend basically on three factors:Crystal growth rates depend basically on three factors:
Introduction
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Relevance
The development of glassThe development of glass--ceramics ceramics depend on the controlled depend on the controlled
crystallization of certain glassescrystallization of certain glasses
Crystallization kinetics allows or Crystallization kinetics allows or not the existence of vitreous statenot the existence of vitreous state
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Example of Crystal Growth
αα--phase growth on NS2 atphase growth on NS2 at780780ooCC / / 1 min 1 min intervalsintervals
NaNa22OO⋅⋅2SiO2SiO22
800 850 900 950 1000 1050 1100 115010-9
10-8
10-7
10-6
u (m
/s)
T (K)
Meling & Uhlmann
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ii) ) NORMALNORMAL
Three Classical MechanismsThree Classical Mechanisms
SiOSiO22 & GeO& GeO22
How Crystals Grow?
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iiii) ) SCREW DISLOCATION MODELSCREW DISLOCATION MODELNaNa22OO⋅⋅2SiO2SiO2 2 , Na, Na22OO⋅⋅4B4B22OO33 & & DiopsideDiopside
G. H. Gilmer, J. Crystal Growth 42 (1977)
How Crystals Grow?George Gilmer
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PbOPbO⋅⋅SiOSiO22 & & AnorthiteAnorthite
iiiiii) ) SURFACE NUCLEATION or 2DSURFACE NUCLEATION or 2D
How Crystals Grow?
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Normal Growth
λcrystal liquid
crystalcrystal--liquid interfaceliquid interface
⎟⎠⎞
⎜⎝⎛ Δ
−=RTGvv D
lc exp0
⎟⎟⎠
⎞⎜⎜⎝
⎛ Δ+Δ−=
RTGG
vv Dcl exp0
( ) ⎥⎦
⎤⎢⎣
⎡⎟⎟⎠
⎞⎜⎜⎝
⎛ Δ−−⎟
⎠⎞
⎜⎝⎛ Δ−λ=
RTG
RTGvTu D expexp 10
( )cllc vvu −λ=
| |
Potential
Distance
ΔG l
ΔG c
ΔG
ΔGD
λcrystalliquid
vlc
vclKineticsKinetics
S. Glasstone, K. J. Laidler, H. Eyring, The Theory of Rate Processes (1941)
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( ) ⎥⎦
⎤⎢⎣
⎡⎟⎟⎠
⎞⎜⎜⎝
⎛ Δ−−⎟
⎠⎞
⎜⎝⎛ Δ
−λ=RT
GRTGvfTu D expexp 10 f ≈ constantconstant ≈ 1
Harold A. WilsonHarold A. Wilson YakovYakov FrenkelFrenkel
Normal GrowthFraction of prefered
growth sites f
H. A. Wilson, Philos. Mag. 50 (1900)Ya. Frenkel, Phys. Z. Sowjetunion 1 (1932)
Main supposition: crystal growth front has a high concentration of growth sites f ~1
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The screw dislocation mechanism was proposed by Burton, Cabrera & Frank.
Screw Dislocation
Frederick Frank Nicolás Cabrera
W. K. Burton, N. Cabrera, F. C. Frank, Trans. Roy. Soc. London A243 (1951)
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Screw Dislocation
( ) ( ) ⎥⎦
⎤⎢⎣
⎡⎟⎟⎠
⎞⎜⎜⎝
⎛ Δ−−
ηλλ=
RTGTkTfTu B exp13
ThermodynamicTransport
ηλ= 3
Tkv B
dislocation linedislocation line⎥⎦
⎤⎢⎣
⎡⎟⎟⎠
⎞⎜⎜⎝
⎛ Δ−−λ=
RTG
vfTu exp)( 1
Surface is smooth but imperfect at atomic level
m
m
TTTf
π−
≈2
SE
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Surface Growth: 2D⎟⎠⎞
⎜⎝⎛
Δ−
η=
GTBbCu exp
wherewhere:3λ
=Tkb B
3 2mA
m
VN
HΔα=σ
((largelarge crystal case)crystal case)
B
mkVB
2σπλ=
((smallsmall crystal case)crystal case)
B
mk
VB3
2σπλ=
0ANC Sλ≈
( ) ( )[ ]323 5
134
3 //exp/
/RTG
NC S Δ−−
Γ
λπ=
Surface is smooth but also imperfect at atomic level, but free of intersecting screw dislocations
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i) i) NormalNormal ((NN))
ii) ii) Screw DislocationsScrew Dislocations ((SDSD))
iii) iii) Surface NucleationSurface Nucleation ((2D2D))
Summary: Growth Mechanisms
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i) i) NormalNormal ((NN))
ii) ii) Screw DislocationsScrew Dislocations ((SDSD))
iii) iii) Surface NucleationSurface Nucleation ((2D2D))
( ) ⎥⎦
⎤⎢⎣
⎡⎟⎠⎞
⎜⎝⎛ Δ
−−λ
=RT
GDTu u exp1
( ) ⎥⎦
⎤⎢⎣
⎡⎟⎠⎞
⎜⎝⎛ Δ
−−λ
=RT
GDfTu u exp1
( ) ⎟⎠⎞
⎜⎝⎛
Δ−
λ=
GTBDCTu u exp2
ifif DDuu≈≈ DDηη
Summary: Growth Mechanisms
ηλ= 3
Tkv BDu
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EXAMPLES OF
CRYSTAL GROWTH CURVES
Properties required to test modelsor calculate growth rates
i) Diffusivity (or viscosity) vs. T;ii) Crystal-glass free energy vs. T
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800 900 1000 1100 1200 1300 1400 1500 1600 17000
1x104
2x104
3x104
4x104
5x104
6x104
7x104
ΔG (J
/mol
)
T (K)
Turnbull Hoffman Borisova
700 800 900 1000 1100 1200 13000,0
5,0x103
1,0x104
1,5x104
2,0x104
2,5x104
ΔG (J
/mol
)
T (K)
Turnbull Hoffman Burgner & Weinberg
Gibbs Free EnergyComparison of measured and calculated Gibbs free energies ΔG for LS2 and diopside in wide range of temperatures. Li2O⋅2SiO2
CaO⋅MgO⋅2SiO2
M. L. F. Nascimento, Thesis, Federal University of São Carlos (2004)
Both approximations are valid near Tm. For normal and screw dislocationgrowth ΔG does not have a strong influence on U compared to the transport term.
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Viscosity: Diopside
)/(.log 751396127410 −+−=η T
1000 1200 1400 1600 1800 2000
-2
0
2
4
6
8
10
12
14
16
Licko & Danek15
Kozu & Kani16
McCaffery et al.17
Neuville & Richet18
Sipp et al.19
Taniguchi20
Klyuev21
this worklog
η (P
a.s)
Temperature T (K)
M. L. F. Nascimento, E. B. Ferreira, E. D. Zanotto, J. Chem. Phys. 121 (2004)
CaOCaO⋅⋅MgMgOO⋅⋅22SiOSiO22
Eduardo Ferreira
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Arrhenius or Vogel-Fulcher-Tammann-Hesse (VFTH) equations describe viscosity data between Tgand Tm for many systems; but is the Stokes-Einstein/Eyring equation adequate to describe the rearrangements on the crystal growth front?
Svante Arrhenius Gustav TammannGordon Fulcher
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1100 1200 1300 1400 1500 160010-11
10-10
10-9
10-8
10-7
10-6
10-5
10-4
800 900 1000 1100 1200 1300 1400
10-11
10-10
10-9
10-8
10-7
10-6
10-5
10-4
CaO·MgO·2SiO2
Briggs & Carruthers Fokin & Yuritsyn Kirkpatrick et al. Nascimento et al. Reinsch & Müller ZanottoG
row
th ra
te U
(m/s
)
Temperature T (K)
screw
T (oC)
Growth rates: Diopside
( ) ⎥⎦
⎤⎢⎣
⎡⎟⎠⎞
⎜⎝⎛ Δ
−−λ
=RT
GDfTu u exp1
λ ~ 1.5 ASD
1.1Tg
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1000 1100 1200 1300 1400 1500 1600 170010-13
10-12
10-11
10-10
10-9
10-8
10-7
10-6
10-5
10-4
R2 = 0.89a0 = (0.161 ± 0.004)ÅA = -2.0449B = 4330.54141 KT0 = 777.01529 KHm = 180 kJ/mol
Tm = 1623 (1350oC)
Reinsch & Müller's data
Gro
wth
rate
u (m
/s)
T (K)
CordieriteS. Reinsch, M. L. F. Nascimento, R. Muller, E. D. Zanotto, sub. JACS
The mechanismdepends on the Tmof μ−cordierite, a metastable phase...
If Tm = 1350oC ⇒ SD
If Tm = 1467oC ⇒ 2D
2MgO2MgO⋅⋅2Al2Al22OO33⋅⋅5SiO5SiO22
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Si−O bondbond1.62Å
O−O bondbond2.64Å
SiOSiO22 glassglass
⎥⎥⎦
⎤
⎢⎢⎣
⎡⎟⎟⎠
⎞⎜⎜⎝
⎛ Δ−−
λη=
RTGTkTu B exp)( 1
Silica Type I
1600 1700 1800 1900 2000
-1,0x10-9
0,0
1,0x10-9
2,0x10-9
SiO2 Type I - Wagstff's data
Gro
wth
rate
u (m
/s)
Temperature T (K)
Normal growth
1.11.1TTgg
λ ~ 1 A
Nascimento & Zanotto, PRB (2006)
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700 800 900 1000 1100 1200 130010-13
10-12
10-11
10-10
10-9
10-8
10-7
10-6
10-5
10-4
u (m
/s)
T (K)
Barker et al. Burgner & Weinberg James Matusita & Tashiro Ota et al. Schmidt & Frischat Zanotto & Leite Fokin Soares Jr. Gonzalez-Oliver et al. Deubener et al. Ogura et al. Parcell Ito et al. Leontjeva
u(T) ajustado com λ = 1,3 Å
LiLi22OO⋅⋅2SiO2SiO22
2D2D
TTgg
1.11.1TTgg
LS2 ( ) ⎟⎠⎞
⎜⎝⎛
Δ−
λ=
GTBDCTu u exp2
B
m
kVB3
2σπλ=
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SummaryThree classical types: normalnormal, screwscrew & 2D2D
ΔG = TurnbullTurnbull or HoffmannHoffmannΔGD == via StokesStokes--Einstein / Einstein / EyringEyring
ΔHm = melting enthalpymelting enthalpyη = viscosityviscosity
Validity of crystal growth models & StokesValidity of crystal growth models & Stokes--Einstein / Einstein / EyringEyring equation in a equation in a widewide temperature rangetemperature range