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Critical Dimension Enhancement
of DUV Photolithography on the
ASML 5500/300
Francesca Calderon
Miramonte High School
August 13th, 20151
2
g-line - 436 nm
i-line - 365 nm
DUV - 248 nm
DUV - 193 nm
resolution ~ 𝝀/2NA
[1] Krassenstein, Brian. "The Moore’s Law of 3D Printing… Yes It Does Exist, And Could Have Staggering Implications."
3DPrintcom. N.p., 28 June 2014. Web. 12 Aug. 2015.
Photolithography Review
3
Bottom Anti Reflective
Coating - svgcoat3
Photoresist Coat - svgcoat6
DUV Exposure - asml300
Develop in MF26 - svgdev6
UV stabilize - axcelis/uv
bake
[2] "Semiconductor Lithography." The Basics of Microlithography. N.p., 23 Nov. 2006. Web. 03 Aug. 2015.
Background and History
➢It is understood that the current resolution limit
of the asml300 is 250 nm
➢The past baseline CMOS runs have successfully
made transistors with 350 nm features
➢Similar systems in other labs have been shown
to go down to 200 nm for an isolated line
4
Background: Optical Column in Stepper
5[3] Ito, Takashi, and Shinji Okazaki. Nature. N.p., 31 Aug. 2000. Web. 12 Aug. 2015.
Theory: Annular Illumination
6[3] Ito, Takashi, and Shinji Okazaki. Nature. N.p., 31 Aug. 2000. Web. 12 Aug. 2015.
Goals➢Characterize properties of UV210-0.3, a new
photoresist○ generate a process specification for lab members to
reference
➢Determine the minimum feature size that can be
produced on the asml300○ Focus-exposure matrices and inspection with leo SEM
➢Characterize off-axis illumination and variable
numerical aperture○ Bossung and exposure latitude plots
7
Tools Qualified On :
8
axcelis
svgcoat3
svgcoat/dev6
asml300uvbake
Tools Qualified On :
9
leoasiq
primeoven
nanospec
matrix
Experimental Method - Photoresist Characterization
10
1. Coated wafers at different spin speeds
and measured film thickness
○ generate spin speed curve
2. Decided upon a spin speed to achieve
a targeted film thickness
3. Created a process specification to
define the final process
4. Ran process wafers to populate the
process specification
Experimental Results - Photoresist Characterization
11
The vendor data sheet provided a spin speed curve that
closely matched our experimental results on svgcoat6
12
Experimental Results - Process Specification
Experimental Method - Critical Dimension Enhancement
13
1. Ran focus-exposure matrices
2. Measured linewidth with the leo SEM
3. Created Bossung and exposure latitude
plots
4. Determined ideal imaging conditions to
resolve 150 nm isolated lines
5. Patterned whole wafers with ideal
conditions to make sure the results were
repeatable
Intro to Bossung Plots
14
What is important:
1. A change in exposure dose results in the smallest possible change in linewidth - ΔY
2. A change in focus results in the smallest possible change in linewidth - slope
Intro to Exposure Latitude Plots
15
What is important:
1. A change in focus dose results in the smallest possible change in linewidth - ΔY
2. A change in exposure results in the smallest possible change in linewidth - slope
Experimental Results - Conventional Imaging
16
Dose: 13 mJ/cm2
Focus: -0.23 um
Enhancement: none
Exposure Latitude: 186 nm - 117 nm = 69 nm
mJ/cm2
mJ/cm2
mJ/cm2
mJ/cm2
mJ/cm2
mJ/cm2
mJ/cm2
mJ/cm2
mJ/cm2
um
um
um
um
um
17
Experimental Results - Critical Dimension Enhancement
Dose: 16 mJ/cm2
Focus: -0.23 um
Enhancement: NA = 0.6 Outer = 0.855 Inner = 0.550
Exposure Latitude: 151.5 nm - 142 nm = 9.5 nm
mJ/cm2
mJ/cm2
mJ/cm2
mJ/cm2
mJ/cm2
mJ/cm2
mJ/cm2
mJ/cm2
mJ/cm2
um
um
um
um
um
um
um
18
Dose: 16 mJ/cm2
Focus: -0.23 um
Enhancement: NA = 0.6 Outer = 0.755 Inner = 0.450
Exposure Latitude: 161 nm - 157.5 nm = 3.5 nm
mJ/cm2
mJ/cm2
mJ/cm2
mJ/cm2
mJ/cm2
mJ/cm2
mJ/cm2
mJ/cm2
mJ/cm2
um
um
um
um
um
um
um
um
Experimental Results - Critical Dimension Enhancement
Chosen Image Settings
Exposure: 16 mJ/cm2
Focus: -0.23 microns
Numerical Aperture: 0.6
Annular Condition 1: Sigma Inner: 0.550
Sigma Outer: 0.855
Annular Condition 2: Sigma Inner: 0.450
Sigma Outer 0.75519
Experimental Results : Wafer Scale Performance, CD = 150 nm
20
21 locations per wafer were measured
Best case imaging was observed with the small annular ring. It produced an average line
width of 150.3 nm, with a 90.5% yield.
Experimental Results : UV210-0.3 Cross-sectional Profiles
21Imaging conditions: 16 mJ/cm2, -0.23 um, NA=0.6 Sigma Outer=0.855 Sigma Inner=0.55
line width =
152 nm
sidewall angle
= 90º
aspect ratio ~ 2.5:1
Conclusion
22
➢ 150 nm lines have been resolved in 3800 Å
thick UV210-0.3 photoresist
➢ The results found are consistent from wafer-to-
wafer and uniform across a wafer
➢ CD fidelity has good accuracy with the average
line width less than 1 nm from target and a
standard deviation approximately 11 nm
Acknowledgements - Thank You!
23
★Jeff Clarkson
★Kim Chan
★Irving Garduno
★Greg Mullins
★David Lo
★Cheryl Chang
★Marilyn Kushner
★Bill Flounders
24