Conference Information and Technical Programme · PDF fileErlangen-Nurnberg, Germany T. Kimoto Kyoto University, ... 08:45 Registration 08:45 ... Hungarian Academy of Sciences,

Conference Information and

Technical Programme

www.ecscrm2016.org Page 2

Contents Welcome to ECSCRM 2016 ............................................................................................................................. 3

20 years of ECSCRM ...................................................................................................................................... 3

Committees .................................................................................................................................................... 4

Conference Timetable ...................................................................................................................................... 5

Proceedings .................................................................................................................................................... 6

Session Listing ............................................................................................................................................... 7

Tutorial Day Sunday, 25 Sept. 2016 ............................................................................................................... 7

Industrial Session Monday, 26 Sept. 19:30 - 22:30 .......................................................................................... 8

Oral presentations ........................................................................................................................................... 9

Monday, 26 Sept. 8:30 - 8:40 Opening ........................................................................................................... 9

Monday, 26 Sept. 8:40 - 10:15 Mo1 Plenary Session ....................................................................................... 9

Monday, 26 Sept. 10:40 - 12:25 Mo2a Related Materials................................................................................ 10

Monday, 26 Sept. 10:40 - 12:25 Mo2b Extended Defects ............................................................................... 11

Monday, 26 Sept. 14:00 - 15:45 Mo3 Interfaces ............................................................................................ 12

Tuesday, 27 Sept. 8:30 - 10:15 Tu1 Bipolar and High Voltage Devices ............................................................ 13

Tuesday, 27 Sept. 10:40 - 12:25 Tu2a Fundamental Electro-Optical Properties ................................................. 14

Tuesday, 27 Sept. 10:40 - 12:25 Tu2b Bulk Growth ....................................................................................... 15

Tuesday, 27 Sept. 14:00 - 15:45 Tu3 MOSFETs ............................................................................................ 16

Wednesday, 28 Sept. 8:30 - 10:15 We1 Processing ........................................................................................ 17

Wednesday, 28 Sept. 10:40 - 12:25 We2a Epitaxy ......................................................................................... 18

Wednesday, 28 Sept. 10:40 - 12:25 We2b Devices, Power Conversion, Sensors ................................................ 19

Wednesday, 28 Sept. 14:00 - 15:45 We3 Quantum Technology and Point Defects ............................................. 20

Thursday, 29 Sept. 8:30 - 10:15 Th1 MOS Interfaces ..................................................................................... 21

Thursday, 29 Sept. 10:40 - 12:10 Th2 Challenges and Perspectives ................................................................. 22

Thursday, 29 Sept. 12:10 - 12:50 Closing Session ......................................................................................... 22

Poster Presentations ...................................................................................................................................... 23

Monday, 26 Sept. 16:00 - 18:00 MoP Poster Session ..................................................................................... 23

Tuesday, 26 Sept. 16:00 - 18:00 TuP Poster Session ...................................................................................... 29

Wednesday, 26 Sept. 16:00 - 18:00 WeP Poster Session ................................................................................. 35

Author Index ................................................................................................................................................ 41

http://www.ecscrm2016.org/


Welcome to ECSCRM 2016 The European Conference on Silicon Carbide and Related Materials (ECSCRM) is a highly-anticipated event, held every two years, that represents an important international forum that brings together world-leading specialists working in different areas of wide-bandgap semiconductors. Experienced researchers, experts from leading companies and young students interested in this specific scientific domain have a unique opportunity to exchange their views and ideas on the subject in a beautiful environment. The ECSCRM2016 is held in Greece, in the Porto Carras Grand Resort located in Sithonia, Halkidiki. Sithonia is one of Halkidiki’s peninsulas offering exquisite scenery with the unique combination of clear blue sea and dark green pine trees reaching out to the water over the white sand. The organizers have the pleasure of inviting you to participate in ECSCRM2016 and look forward to welcoming you at a beautiful venue for an exciting conference. ECSCRM 2016 Chairpersons:

Konstantinos Zekentes Principal Researcher

Microelectronics Research Group (MRG) Institute of Electronic Structure and Laser (IESL)

Foundation for Research & Technology Hellas (FORTH) Heraklion, Greece

Nikolaos Frangis Professor

Electron Microscopy Laboratory (EML) Department of Physics

Aristotle University of Thessaloniki (AUTH) Thessaloniki, Greece

20 years of ECSCRM Back in 1996, the first ECSCRM took place in Fodele-Heraklion, on the beautiful island of Crete, Greece. Following a successful course of almost two decades, the conference has gained momentum, acquired significant prestige among professionals and travelled all over Europe. Twenty years later, ECSCRM returns to Greece, this time to the beautiful land of Halkidiki, in the north part of the country.

1st ECSCRM 1996 Fodele-Heraklion, Greece 6-9 October 1996 2nd ECSCRM 1998 Montpellier, France 2-4 September 1998 3rd ECSCRM 2000 Kloster Banz, Germany 3-7 September 2000 4th ECSCRM 2002 Linkoping, Sweden 2-5 September 2002 5th ECSCRM 2004 Bologna, Italy 31 August - 4 September 2004 6th ECSCRM 2006 Newcastle upon Tyne, UK 3-7 September 2006 7th ECSCRM 2008 Barcelona, Spain 7-11 September 2008 8th ECSCRM 2010 Oslo, Norway 29 August – 2 September 2010 9th ECSCRM 2012 St. Petersburg, Russia 2-6 September 2012

10th ECSCRM 2014 Grenoble, France 21-25 September 2014 11th ECSCRM 2016 Halkidiki, Greece 25-29 September 2016


http://www.physics.auth.gr/en

http://www.forth.gr/


Committees Local Organizing Committee

M. Bucher Technical University of Crete, Chania, Greece

N. Frangis Aristotle University of Thessaloniki, Thessaloniki, Greece

G. Konstantinidis Foundation for Research and Technology, Heraklion, Greece

S. Manias National Technical University of Athens, Athens, Greece

D. Tassis Aristotle University of Thessaloniki, Thessaloniki, Greece

K. Vasilevskiy Newcastle University, Newcastle upon Tyne, UK

V. Veliadis PowerAmerica, North Carolina State University, USA

K. Zekentes Foundation for Research and Technology, Heraklion, Greece

International Steering Committee

D. Crippa LPE, Italy M. Dudley Stony Brook University, New York, USA

G. Ferro Universite Claude Bernard Lyon 1, Lyon, France

A. Gali Budapest University of Technology and Economics, Budapest, Hungary

A. Henry Linkoping University, Linkoping, Sweden

M. Krieger Friedrich-Alexander-Universitat Erlangen-Nurnberg, Germany

T. Kimoto Kyoto University, Kyoto, Japan A. Lebedev Ioffe Institute, St Petersburg, Russia D. Planson National Institute of Applied Sciences,

Lyon, France F. Roccaforte National Research Council, Catania,

Italy R. Rupp Infineon Technologies, Germany

A. Schoner Ascatron, Sweden B. Svensson University of Oslo, Oslo, Norway

Panel Members

J. Camassel University of Montpellier, Montpellier, France

P. Deak University of Bremen, Bremen, Germany

P. Godignon Centro Nacional de Microelectronica, Barcelona, Spain

E. Janzen Linkoping University, Linkoping, Sweden

H. Matsunami Kyoto University, Kyoto, Japan R. Nipoti National Research Council, Bologna,

Italy J. Stoemenos Aristotle University of Thessaloniki,

Thessaloniki, Greece

Technical Program Committee I. Material Growth

D. Crippa LPE, Italy G. Ferro Universite Claude Bernard Lyon 1,

Lyon, France A. Henry Linkoping University, Linkoping,

Sweden F. La Via National Research Council, Catania,

Italy A. Lebedev Ioffe Institute, St Petersburg, Russia

S. Polychroniadis Aristotle University of Thessaloniki, Thessaloniki, Greece

A. Schoner Ascatron, Sweden P. Wu II-VI Incorporated, USA

II. Characterization & Modelling

P. Bergman Linkoping University, Linkoping, Sweden

N. Frangis Aristotle University of Thessaloniki, Thessaloniki, Greece

A. Gali Budapest University of Technology and Economics, Budapest, Hungary

T. Kimoto Kyoto University, Kyoto, Japan M. Krieger Friedrich-Alexander-Universitat

Erlangen-Nurnberg, Germany P. Soukiassian CEA, Saclay, France

B. Svensson University of Oslo, Oslo, Norway III. Processing

D. Alquier University of Tours, Tours, France G. Konstantinidis Foundation for Research and

Technology, Heraklion, Greece R. Nipoti National Research Council, Bologna,

Italy F. Roccaforte National Research Council, Catania,

Italy R. Rupp Infineon Technologies, Germany

K. Vasilevskiy Newcastle University, Newcastle upon Tyne, UK

K. Zekentes Foundation for Research and Technology, Heraklion, Greece

IV. Devices

G. Brezeanu University Politehnica of Bucharest, Bucharest, Romania

M. Bucher Technical University of Crete, Chania, Greece

P. Godignon Centro Nacional de Microelectronica, Barcelona, Spain

P. Mawby University of Warwick, Coventry, UK A. Mihaila ABB, Zurich, Switzerland D. Peters Infineon Technologies, Germany

D. Planson Ampere INSA, Lyon, France M. Saggio ST, Catania, Italy

V. Related Materials

D. Alquier University of Tours, Tours, France P. Bergman Linkoping University, Linkoping,

Sweden P. Godignon Centro Nacional de Microelectronica,

Barcelona, Spain A. Henry Linkoping University, Linkoping,

Sweden G. Konstantinidis Foundation for Research and

Technology, Heraklion, Greece P. Soukiassian CEA, Saclay, France K. Vasilevskiy Newcastle University, Newcastle upon

Tyne, UK



Conference Timetable



Proceedings Like in the previous conferences, ECSCRM 2016 proceedings will be published by the Trans Tech Publication Co. in the Materials Science Forum journal. Materials Science Forum is one of the largest periodicals in its field and is broadly indexed by all the major services:

Thomson Reuters, in their CPCI index (part of the Web of Science) Elsevier, in SCOPUS Index Copernicus Journals Master Google Scholar Engineering Village (Ei Compendex - CPX) Cambridge Scientific Abstracts (CSA) Inspec (IET, Institution of Engineering Technology) SCImago Journal & Country Rank (SJR)

Materials Science Forum volumes are not only available online to the broad TTP subscriber base, but also via third party distributors and aggregators such as Ebray, EBSCO, Dawson, British Library, etc. ECSCRM 2016 participants will receive a printed copy of the proceedings volume, a CD with the proceedings and online access to their paper in the publisher’s portal.



Session Listing

Tutorial Day Sunday, 25 Sept. 2016

Location: Olympic Hall Ι Tutorial Title: Learn how to develop your SiC MOSFET in one day!

08:15 - 08:45 Registration

08:45 - 09:00 Prof Matthias Bucher Technical University of Crete, Greece

Welcome

09:00 - 10:10 Prof James Cooper Purdue University, USA

SiC MOSFET device physics and design optimization

10:10 - 10:25 Coffee break

10:25 - 11:25 Prof Tsunenobu Kimoto Kyoto University, Japan

Material for SiC MOSFET fabrication (bulk/epitaxial growth, selection criteria, defects, screening methods)

11:25 - 12:15 Dr Victor Veliadis PowerAmerica/NCSU, USA

Other MOSFET processing (ohmic contacts, implantation, passivation, specific issues related to device geometry,…)

12:15 - 13:30 Lunch

13:30 - 14:30 Dr Kevin Matocha Monolith, USA

Physics and technology of SiO2/SiC interface

14:30 - 15:30 Prof Alberto Castellazzi Nottingham University, UK

SiC MOSFET electrical static and dynamic characterization, electrical stresses, device reliability


15:45 - 16:45 Dr Ljubisa Stevanovic GE, USA

SiC MOSFET as circuit components - targeted applications

16:45 - 17:15 Dr Scott Allen Wolfspeed, USA

Summarizing remarks (evolution of SiC MOSFETs - main open points)



Industrial Session Monday, 26 Sept. 19:30 - 22:30

Following the long ICSCRM/ECSCRM tradition, ECSCRM 2016 also hosts an Industrial Session. This time a new, more attractive scheme has been chosen. The Industrial Session will be two panel discussions, one after the other, each lasting approximately 1 hour and consisting of panel members (company representatives specialized on a certain subject) and two moderators. There will be a short introduction by each company and then questions by the moderators and mainly the audience. This panel discussion will offer direct comparison possibilities that will be interesting to the audience and the interaction between companies and participants will allow both sides to clarify their objectives and get more targeted information. 19:30 -20:30 Material-related session

Moderators: Mario Saggio (ST Microelectronics, Italy)

Hidekazu Tsuchida (CRIEPI, Japan) Location: Olympic Hall Ι

20:35 - 21:35 Device/applications session

Moderators: Hong Lin (YOLE Inc, France)

Viktor Veliadis (PowerAmerica, USA) Location: Olympic Hall Ι

21:35 - 22:40 Greek specialities with Greek beers and refreshment drinks



Oral presentations

Monday, 26 Sept. 8:30 - 8:40 Opening

Location: Olympic Hall Ι

08:30 Prof Nikolaos Frangis

Aristotle University of Thessaloniki (AUTH), Greece

Opening

Monday, 26 Sept. 8:40 - 10:15 Mo1 Plenary Session

Session Chairs: Nikolaos Frangis (AUTH, Greece) Konstantinos Zekentes (FORTH, Greece)


08:40 Plenary Mo1.02 Rupp How to further improve the market penetration of SiC power devices?

R. Rupp1, R. Bayerer2 1Infineon Technologies AG, Am Campeon 1, 85579 Neubiberg, Germany 2Infineon Technologies AG, Max-Planck-Str. 5, 59581 Warstein, Germany

09:20 Plenary Mo1.01 Rahimo Performance evaluation and expected challenges of silicon carbide power

MOSFETs and diodes for high voltage applications

M. T. Rahimo

ABB Switzerland Ltd., Semiconductors, Fabrikstrasse 3, Lenzburg, CH-5600,

Switzerland

10:00 Invited Poster Announcement:

Invited

poster

MoP.01 Masuda 0.97 MΩ.cm2 / 820 V 4H-SiC Super Junction V-groove Trench MOSFET

T. Masuda1, R. Kosugi1, T. Hiyoshi2 1Nation Institute of Advanced Industrial Science and Technology 16-1 Onogawa,

Tsukuba, Ibaraki, 303-8564 Japan 2Sumitomo Electric Industries, Ltd. 1-1-3 Shimaya, Konohana, Osaka 554-0024,

Japan

Invited

Poster

MoP.02 Csore Density functional theory study on NV center in 4H-SiC

A. Csore1, A. Gali2 1Department of Atomic Physics, Budapest University of Technology and Economics,

Budafoki út 8, H-1111 Budapest, Hungary 2Wigner Research Centre for Physics, Hungarian Academy of Sciences,

Konkoly Thege Miklos ut 29-33., H-1121 Budapest, Hungary

Invited

poster

MoP.03 Guo Evaluation and reduction of epitaxial wafer defects resulting from carbon-

inclusion defects in 4H-SiC substrate

L. Guo, K. Kamei, K. Momose, and H. Osawa

SHOWA DENKO K.K. Business Development Center, Power Semiconductor Project,

1505 Shimokagemori Chichibu-shi, Saitama 369-1893, Japan




Monday, 26 Sept. 10:40 - 12:25 Mo2a Related Materials

Session Chairs: Philippe Godignon (CNM, Spain) Jeorg Pezoldt (Ilmenau University, Germany)


10:40 Invited Mo2a.01 Higashiwaki Status and Potential of Gallium Oxide Devices - a New Candidate for Future Power

Semiconductor Electronics

M. Higashiwaki1, M. H. Wong1, K. Konishi1, K. Sasaki2,1, K. Goto2,3, R. Togashi3, H.

Murakami3, Y. Kumagai3, B. Monemar3,4, A. Kuramata2, and S. Yamakoshi2 1National Institute of Information and Communications Technology, Koganei, Tokyo 184-

8795, Japan 2Tamura Corporation, Sayama, Saitama 350-1328, Japan 3Department of Applied Chemistry, Tokyo University of Agriculture and Technology,

Koganei, Tokyo 184-8588, Japan 4Department of Physics, Chemistry, and Biology, Linkӧping University, S-581 83

Linkӧping, Sweden

11:10 Mo2a.02 Myers-Ward Turning it off: towards graphene-based vertical transistors for realistic applications

A. Nath1, A.D. Koehler2, G. G. Jernigan2, B.D.Kong3, V.R.Anderson4, V.D. Wheeler2, E.R.

Cleveland2, A.K. Boyd4, K.M. Daniels3, R.L. Myers-Ward2, D.K. Gaskill2 , K.D. Hobart2 and

F.J. Kub2 1George Mason University, Fairfax, Virginia 22030, USA 2U.S. Naval Research Laboratory, Washington DC 20375, USA 3NRC Postdoctoral Fellow Residing at Naval Reasearch Lab 4ASEE Postdoctoral Fellow Residing at Naval Reasearch Lab

11:25 Mo2a.03 Dagher CVD growth of graphene on SiC (0001): influence of hydrogen ratio and offcut on

the growth

R. Dagher1, B. Jouault2, M. Bayle2, L. Nguyen1, M. Portail1, M. Zielinski3, T. Chassagne3,

Y. Cordier1 and A. Michon1 1CNRS-CRHEA, Rue Bernard Gregory, 06560 Valbonne, France 2Laboratoire Charles Coulomb, Pl. Eugene Bataillon, 34095 Montpellier, France 3NOVASiC, Savoie Technolac, Arche Bat 4, BP267, 73375 Le Bourget du Lac, France

11:40 Mo2a.04 Gkanatsiou Quantitative analysis of strained steps in the AlN/6H-SiC interface

A. Gkanatsiou, Ch. B. Lioutas, N. Frangis, E. K. Polychroniadis

Solid State Physics Section, Department of Physics, Aristotle University of Thessaloniki,

GR-54124 Thessaloniki, Greece

11:55 Mo2a.05 Kaneko Periodically Aligned Misfit Dislocations at AlN/SiC Heterointerface

M. Kaneko, T. Kimoto, and J. Suda

Dept. of Electronic Sci. & Eng., Kyoto University, Nishikyo, Kyoto 615-8510, Japan

12:10 Mo2a.06 Ingebrigtsen Bulk β- Ga2O3 with (010) and (201) surface orientation: Schottky contacts and

defects

M. E. Ingebrigtsen1, L. Vines1, G. Alfieri2, A. Mihaila2, U. Badstubner2, B.G. Svensson1, A.

Kutznetsov1 1University of Oslo, Pb 1048 Blindern, 0316 Oslo, Norway 2ABB Corporate Research, Segelhofstrasse 1K, 5405 Baden-Dattwil, Switzerland

12:25 - 14:00 Lunch



Monday, 26 Sept. 10:40 - 12:25 Mo2b Extended Defects

Session Chairs: Michael Dudley (RPI, USA) Peder Bergman (Linkoping University, Sweden)

Location: Olympic Hall ΙII

10:40 Invited Mo2b.01 Iijima Correlation between Shapes of Shockley Stacking Faults and Structure of Basal

Plane Dislocations in 4H-SiC Epilayers

A. Iijima, J. Suda, and T. Kimoto


11:10 Mo2b.02 Tokuda Structure and Glide Velocity of Leading Partials for Expanding Double Shockley

Stacking Faults in n+-Type 4H-SiC

Y. Tokuda1,3,4, I. Kamata2, T. Yamashita1,5, T. Naijo1,6, T. Miyazawa2,

N. Hoshino2, T. Kato1, H. Okumura1, T. Kimoto4 and H. Tsuchida2 1National Institute of Advanced Industrial Science and Technology (AIST), 16-1

Onogawa, Tsukuba, Ibaraki 305-8569, JAPAN 2Central Research Institute of Electric Power Industry (CRIEPI), Japan 3DENSO CORPORATION, Japan 4Department of Electronic Science and Engineering, Kyoto University, Japan 5SHOWA DENKO K.K., Japan, 6Toray Research Center, Inc., Japan

11:25 Mo2b.03 Weber On Deep Level Transient Spectroscopy of Extended Defects in n-type 4H-SiC

J. Weber1, H. B. Weber1, M. Krieger1 1Lehrstuhl fur Angewandte Physik, Department Physik, Friedrich-Alexander-Universitat

Erlangen-Nurnberg, Staudtstrasse 7, 91058 Erlangen, Germany

11:40 Mo2b.04 Ashida Low energy electron channeling contrast imaging from 4H-SiC surface by SEM and

its comparison with CDIC-OM and PL imaging

K. Ashida1, T. Asio2, M. Okamoto2, H. Seki3, M. Kitabatake4, T. Kaneko 1 Kwansei Gakuin University, School of Science and Technology,2-1 Gakuen, Sanda,

Hyogo, 669-1337, Japan 2Toyo Corp., 1-6 Yaesu 1-chome, Chuo-ku, Tokyo, 103-8284, Japan 3Lasertec Corp., 2-10-1 Shinyokohama, Kohoku, Yokohama, 222-8552, Japan 4Toyo Tanso Corp., 2181-2 Nakahime, Ohnohara, Kanonji, Kagawa 769-1612, Japan

11:55 Mo2b.05 Guo Investigation of Factors Influencing Penetration Depth in Grazing Incidence X-ray

Topography of 4H-SiC Wafers

Y. Yang1, J. Guo1, O. Y. Goue1, B. Raghothamachar 1, M. Dudley1, G. Chung2, E.

Sanchez2, I. Maning2 1Stony Brook University, Stony Brook, NY 11794-2278, USA 2Dow Corning Corporation, 5300 11 Mile Road, Auburn, MI 48611, USA

12:10 Mo2b.06 Tsukimoto Correlation between Local Strain Distribution and Microstructure of Grinding-

Induced Damage Layers in 4H-SiC(000¯1)

Susumu Tsukimoto1,2, Tatsuhiko Ise1,3, Genta Maruyama2, Satoshi Hashimoto2, Tsuguo

Sakurada2, Junji Senzaki1, Tomohisa Kato1, Kazutoshi Kojima1, Hajime Okumura1 1Advanced Power Electronics Research Center, National Institute of Advanced Industrial

Science and Technology (AIST), 1-1-1, Umezono, Tsukuba, Ibaraki 305-8568, Japan 2Nano-Scale Characterization Center, JFE Techno-Research Corporation, 1-1

Minamiwatarida, Kawasaki, Kanagawa 210-0855, Japan 3Asahi Diamond Industrial Co., Ltd., 787 Tabi, Ichihara, Chiba 290-0515, Japan

12:25 - 14:00 Lunch



Monday, 26 Sept. 14:00 - 15:45 Mo3 Interfaces

Session Chairs: Andrei Mihaila (ABB Corporate Research, Switzerland) Kevin Matocha (Monolith, USA)


14:00 Mo3.01 Asada Origin of shunt current in 4H-SiC mesa p-n diodes passivated by SiO2 with post-

oxidation nitridation

S. Asada, T. Kimoto, and J. Suda

Department of Electronic Science and Engineering, Kyoto University A1-303,

Kyotodaigaku-katsura, Nishikyo, Kyoto 615-8510, JAPAN

14:15 Mo3.02 Okamoto Dynamic characterization of the Vth instability under the pulsed AC gate bias

stress in 4H-SiC MOSFET

M. Okamoto1, M. Sometani1, S. Harada1, H. Yano2, H. Okumura1 1Advanced Industrial Science and Technology, Tsukuba Central 2, 1-1-1 Umezono,

Tsukuba, Ibaraki 305-8568, Japan 2University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan

14:30 Mo3.03 Sveinbjornsson Conductance signal from near-interface traps in n-type 4H-SiC MOS capacitors

under strong accumulation

R.Y. Khosa1 and E.O. Sveinbjӧrnsson1,2 1 Science Institute, University of Iceland, IS-107 Reykjavik, Iceland 2Department of Physics, Chemistry and Biology (IFM), Semiconductor Materials Division,

Linkoping University, SE-58183 Linkoping, Sweden

14:45 Mo3.04 Hauck Quantitative Investigation of Near Interface Traps in 4H-SiC MOSFETs via Drain

Current Deep Level Transient S3pectroscopy

M. Hauck1, J. Weisse1, H. B. Weber1, M. Krieger1 1Lehrstuhl fur Angewandte Physik, Department Physik, Friedrich-Alexander-Universitat

Erlangen-Nurnberg, Staudtstrasse 7, 91058 Erlangen, Germany

15:00 Mo3.05 Cho Two-dimensional imaging of trap distribution in SiO2/SiC interface using local

deep level transient spectroscopy based on super-higher-order scanning

nonlinear dielectric microscopy

N. Chinone1, R. Kosugi2, Y. Tanaka2, S. Harada2, H. Okumura2, Y. Cho1 1 Research Institute of Electrical Communication, Tohoku University 2-1-1 Katahira,

Aoba-ku, Sendai, 980-8577, Japan 2 National Institute of Advanced Industrial Science and Technology 1-1-1 Umezono,

Tsukuba, 305-8568, Japan

15:15 Mo3.06 Lichtenwalner Electrical Properties and Interface Structure of SiC MOSFETs with Barium

Interface Passivation

D. J. Lichtenwalner1, J. Houston Dycus2, Weizong Xu2, James M. LeBeau2, B. Hull1, S.

Allen1, and J. W. Palmour1 1 Wolfspeed, a Cree Company, 4600 Silicon Drive, Durham, NC 27703, USA 2 Dept. of Mat. Sci. & Eng., N.C. State University, Raleigh, NC 27695, USA

15:30 Mo3.07 Fiorenza Anomalous Fowler-Nordheim tunneling through SiO2 /4H-SiC barrier investigated

by temperature and time dependent gate current measurements

P. Fiorenza1, A. La Magna1, M. Vivona1, F. Roccaforte1 1Consiglio Nazionale delle Ricerche - Istituto per la Microelettronica e Microsistemi

(CNR-IMM),

Strada VIII, n.5 Zona Industriale, 95121 Catania, Italy

15:45 - 16:00 Coffee break followed by MoP Poster Session 16:00 - 18:00



Tuesday, 27 Sept. 8:30 - 10:15 Tu1 Bipolar and High Voltage Devices

Session Chairs: Dominique Planson (INSA - Lyon, France) James Cooper (Purdue University,USA)


08:30 Invited Tu1.01 Ostling New developments in the field of SiC based BJTs. Comparison of SiC BJTs with

SiC MOSFETs in terms of performance and suitability for various applications

Mikael Ostling, Arash Salemi, Hossein Elahipanah, Carl-Mikael Zetterling 1KTH Royal Institute of Technology School of ICT, Electrum 229, 16440 Kista Sweden

09:00 Tu1.02 Ryu Impact of Carrier Lifetime Enhancement Using High Temperature Oxidation on 15

kV 4H-SiC P-GTO Thyristor

S. Ryu1, D. Lichtenwalner1, E. Van Brunt1, C. Capell1, M. O’Loughlin1, C. Jonas1, Y.

Lemma1, J. Zhang1, J. Richmond1, A. Burk1, B. Hull1, H. O’Brien2, A. Ogunniyi2, A. Lelis2,

J. Casady1, D. Grider1, S. Allen1, and J. Palmour1 1Wolfspeed, a Cree Company, RTP, NC, USA 2U.S. Army Research Laboratory, Adelphi, MD, USA

09:15 Tu1.03 Chow Impact of Cell Geometry and Design on the Electrical Characteristics of High

Voltage 4H-SiC Bidirectional IGBTs

S. Chowdhury1, C. W. Hitchcock1, Z. Stum1,2, R. P. Dahal1, I. B. Bhat1, T. P. Chow1 1Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A 2General Electric Global Research Center, Niskayuna, NY 12309, U.S.A

09:30 Tu1.04 Salemi 15 kV-Class Implantation-Free 4H-SiC PiN Diodes

A. Salemi1, H. Elahipanah1, C.M. Zetterling1, M. Ostling1 1KTH Royal Institute of Technology, 164 40 Kista, Sweden

09:45 Tu1.05 Tawara Suppression of the forward degradation in 4H-SiC PiN diodes by employing a

recombination-enhanced buffer layer

T. Tawara1,2, T. Miyazawa3, M. Ryo1,2, M. Miyazato1,2, T. Fujimoto2, K. Takenaka1,2, S.

Matsunaga1,2, M. Miyajima1,2, A. Otsuki2 , Y. Yonezawa1, T. Kato1, H. Okumura1, T.

Kimoto4, H. Tsuchida3 1 National Institute of Advanced Industrial Science and Technology (AIST), Onogawa,

Tsukuba 305-8569, Japan 2 Fuji Electric Co., Ltd., Fuji, Hino, 191-8502, Japan 3 Central Research Institute of Electric Power Industry (CRIEPI), Nagasaka, Yokosuka,

240-0196, Japan 4 Kyoto University, Kyotodaigaku-katsura, Nishikyo, 615-8510, Japan

10:00 Tu1.06 Bu High-reliability 6.5 kV 4H-SiC PiN Diodes without Bipolar Degradation

Y. Bu, H. Yoshimoto, K. Konishi, A. Shima, Y. Shimamoto

Center for Technology Innovation - Electronics, Research & Development Group, Hitachi,

Ltd. 1-280, Higashi-Koigakubo, Kokubunnji-shi, Tokyo 185-8601, Japan




Tuesday, 27 Sept. 10:40 - 12:25 Tu2a Fundamental Electro-Optical Properties

Session Chairs: Adam Gali (Budapest University, Hungary) Nguen T. Son (Linkoping University)


10:40 Invited Tu2a.01 Booker Device-relevant and processing induced deep level traps and recombination

centers in 4H-SiC

I. D. Booker1, T. Okuda1, E. O. Sveinbjornsson2,3, P. Grivickas4, J. Hassan2, R. Karhu2, J.

Suda1, E. Janzen2, T. Kimoto1 1Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510,

Japan 2Department of Physics, Chemistry and Biology (IFM), Semiconductor Materials Division,

Linkoping University, 581 83 Linkoping, Sweden 3Science Institute, University of Iceland, IS-107, Reykjavik, Iceland 4Lawrence Livermore National Laboratory, USA

11:10 Tu2a.02 Miyazawa Carrier Lifetime Control of 4H-SiC Epitaxial Layers by Boron Doping

T. Miyazawa1, T. Tawara2,3, and H. Tsuchida1 1Central Research Institute of Electric Power Industry (CRIEPI), 2-6-1 Nagasaka,

Yokosuka, Kanagawa 240-0196, Japan 2National Institute of Advanced Industrial Science and Technology, 1-1-1Umezono,

Tsukuba, Ibaraki 305-8568, Japan 3 Fuji Electric Co., Ltd., 1 Fuji, Hino, Tokyo 191-8502, Japan

11:25 Tu2a.03 Ayedh Formation of D-center in p-type 4H-SiC epi-layers during high temperature

treatments

H. M. Ayedh1, N. Iwamoto2, R. Nipoti3, A. Hallen4, and B. G. Svensson1 1University of Oslo, Department of Physics/SMN, N-0316 Oslo, Norway 2National Institute of Technology, Kagawa College, 769-1192 Kagawa, Japan 3CNR-IMM, UOS of Bologna, via Gobetti 101, I-40129 Bologna, Italy 4Royal Institute of Technology, KTH-ICT, SE-164 40 Kista, Sweden

11:40 Tu2a.04 Tanaka Theoretical Analysis of Hole Density, Hole Mobility, and Hall Scattering Factor in p-

type 4H-SiC

H. Tanaka, S. Asada, T. Kimoto, J. Suda

Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo,

Kyoto, 615-8510, Japan

11:55 Tu2a.05 Wei Localized Surface Plasmon on <6H> SiC with Ag Nanoparticles

Yi Wei, Ahmed Fadil, Haiyan Ou

Department of Photonics Engineering, Technical University of Denmark, DK-2800, Kgs.

Lyngby, Denmark

12:10 Tu2a.06 Choyke New Evidence for the Second Conduction Band in 4H SiC

Walter Klahold, Charles Tabachnick, Gabriel Freedman, R.P. Devaty, W.J. Choyke

Dept. of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, USA

12:25 - 14:00 Lunch



Tuesday, 27 Sept. 10:40 - 12:25 Tu2b Bulk Growth

Session Chairs: Ping Wu (II-VI Incorporated, USA) Alexander Lebedev (Ioffe Institute, Russia)


10:40 Invited Tu2b.01 Mitani Bulk Growth of p-type 4H-SiC Crystals from Si-C-Al solution

T. Mitani1, N. Komatsu1, Y. Hayashi1, T. Kato1, H. Okumura1 1National Institute of Advanced Industrial Science and Technology, 16-1 Onogawa,

Tsukuba, Ibaraki 305-8569, Japan

11:10 Tu2b.02 Wellmann 3C-SiC bulk sublimation growth on CVD hetero-epitaxial seeding layers

P. Schuh1, G. Litrico2,3, F. La Via3, M. Mauceri4, P.J. Wellmann1 1Crystal Growth Lab, Materials Department 6, FAU Erlangen-Nurnberg, Martensstr. 7,

91058 Erlangen, Germany 2 Laboratori Nazionali del Sud, via S. Sofia, 62, 95123 Catania, Italy 3IMM-CNR, VIII Strada, 5, 95121 Catania, Italy 4E.T.C. Epitaxial Technology Center, 16a strada - Pantano d’Arci, 95121 Catania, Italy

11:25 Tu2b.03 Murayama Reduction of all types of dislocation in 4H-SiC crystal by two-step solution growth

K. Murayama1, T. Hori2, S. Harada1,2, S. Xiao2, M. Tagawa1,2, T. Ujihara1,2 1Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and

Systems for Sustainability (IMaSS), Nagoya University, Furo-cho, Chikusa, Nagoya 464-

8603, Japan 2Department of Materials Science and Engineering, Nagoya University, Furo-cho,

Chikusa, Nagoya464-8603, Japan

11:40 Tu2b.04 Suo Bulk growth of low resistivity n-type 4H-SiC using co-doping

H. Suo1, 2, K. Eto1, T. Kato1, K. Kojima1, H. Osawa2, and H. Okumura1 1National Institute of Advanced Industrial Science and Technology (AIST), Ibaraki, Japan 2Showa Denko K. K, Tokyo, Japan

11:55 Tu2b.05 Harada Solvent design for high-purity SiC solution growth

S. Harada1,2, G. Hatasa2, K. Murayama1, T. Kato3, M. Tagawa1,2, T. Ujihara1,2 1Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and

Systems for Sustainability (IMaSS), Nagoya University, Furo-cho, Chikusa-ku, Japan 2Department of Material Science and Engineering, Nagoya University, Furo-cho,

Chikusa-ku, Japan 3Advanced Power Electronics Research Center (APERC), National Institute of Advanced

Industrial Science and Technology (AIST), 16-1 Onogawa, Tsukuba, Ibaraki, Japan

12:10 Tu2b.06 Guo Effect of Radial Thermal Gradients on the Activation of Prismatic Slip in

4H-SiC Crystals Grown by PVT Method

J. Guo1, Y. Yang1, B. Raghothamachar1, M. Dudley1, G. Chung2, I. Manning2, E.

Sanchez2 1Stony Brook University, Stony Brook, NY 11794-2275, USA 2 Dow Corning Corporation, 5300 11 Mile Road, Auburn, MI 48611, USA

12:25 - 14:00 Lunch



Tuesday, 27 Sept. 14:00 - 15:45 Tu3 MOSFETs

Session Chairs: Paul Chow (RPI, USA) John Palmour (Wolfspeed, USA)


14:00 Invited Tu3.01 Hino Demonstration of SiC-MOSFET Embedding Schottky Barrier Diode for Inactivation

of Parasitic Body Diode

S. Hino, T. Hatta, K. Sadamatsu, Y. Nagahisa, S. Yamamoto, T. Iwamatsu, Y.

Yamamoto, M. Imaizumi, S. Nakata and S. Yamakawa 1 Mitsubishi Electric Corporation, Tsukaguchi-Honmachi 8-1-1, Amagasaki, HYOGO 661-

8661, JAPAN

14:30 Tu3.02 Peters 1200V SiC Trench-MOSFET Optimized for High Reliability and High Performance

D. Peters1, T. Aichinger2, T. Basler3, W. Bergner2, D. Kueck2, R. Esteve2 1Infineon Technologies AG, Erlangen, Germany, 3, Munich, Germany 2Infineon Technologies Austria AG, Villach, Austria

14:45 Tu3.03 Harada 1200 V SiC IE-UMOSFET with Low On-resistance and High Threshold Voltage

S. Harada1, Y. Kobayashi1,2, A. Kinoshita2, N. Ohse1,2, T. Kojima1,2, M. Iwaya2, H.

Shiomi1,3, H. Kitai1,3, S. Kyogoku4, K. Ariyoshi1,4, Y. Onishi2, H. Kimura1,2 1 National Institute of Advanced Industrial Science and Technology, AIST Tsukuba

Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan 2 Fuji Electric Co., Ltd., 1-11-2 Osaki, Shinagawa-ku, Tokyo 141-0032, Japan 3 Sumitomo Electric Industries, Ltd., 1-1-3 Shimaya, Konohana-ku, Osaka, Japan 4 Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki, Kanagawa, Japan

15:00 Tu3.04 Soler Impact of channel mobility implant using Boron diffusion on different Power

MOSFETs voltage classes

V. Soler1, M. Cabello1, M. Berthou2, J. Montserrat1, J. Rebollo1, P. Godignon1, E.

Bianda3, A. Mihaila3 1 Centre Nacional de Microelectronica, CNM-CSIC, Barcelona, SPAIN 2 CALY Technologies, Villeurbanne, FRANCE 3 ABB Switzerland Ltd, Corporate Research Centre, 5405, Baden-Dattwil,

SWITZERLAND

15:15 Tu3.05 Shima 3.3 kV 4H-SiC DMOSFET with Highly Reliable Gate Insulator and Body Diode

A. Shima, H. Shimizu, Y. Mori, M. Sagawa, K. Konishi, R. Fujita, T. Ishigaki, N. Tega, K.

Kobayashi, S. Sato, and Y. Shimamoto


Ltd. 1-280 Higashi-koigakubo, Kokubunji-shi, Tokyo 185-8601, Japan

15:30 Tu3.06 Sato Analysis Self-healing of Gate Leakage Current due to Oxide traps to Improve

Reliability of Gate Electrode

S. Sato, H. Shimizu, A. Shima, and Y. Shimamoto


Ltd. 1-280 Higashi-koigakubo, Kokubunji-shi, Tokyo 185-8601, Japan

15:45 - 16:00 Coffee break followed by TuP Poster Session 16:00 - 18:00



Wednesday, 28 Sept. 8:30 - 10:15 We1 Processing

Session Chairs: Fabrizio Roccaforte (CNR, Italy) Konstantin Vasilevskiy (Newcastle University, UK)


08:30 Invited We1.01 Hosoi Ultrahigh-temperature Oxidation of 4H-SiC(0001) and an Impact of Cooling Process

on SiO2/SiC Interface Properties

T. Hosoi1, D. Nagai1, M. Sometani1, T. Shimura1, M.Takei2, H. Watanabe1 1 Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan 2 Fuji Electric Co., Ltd., 1 Fujimachi, Hino, Tokyo 191-8502, Japan

09:00 We1.02 Fisher An electrical and physical study of crystal damage in high-dose Al- and N-

implanted 4H-SiC

C. A. Fisher1, R. Esteve1, S. Doering2, M. Roesner1, M. DeBiasio3, M. Kraft3, W.

Schustereder1 and R. Rupp4 1 Infineon Technologies AT, Siemenstrasse 2, 9500 Villach, Austria 2 Infineon Technologies AG, Koenigbruecker Strasse 180, D-01099 Dresden, Germany 3 CTR Carinthian Tech Research AG, Europastrasse 12, 9524 Villach, Austria 4 Infineon Technologies AG, Schottkystrasse 10, D-91058 Erlangen, Germany

09:15 We1.03 Nipoti Al+ ion implanted vertical p+-i-n 4H-SiC diodes: processing dependence of forward

leakage current and OCVD carrier life time

R. Nipoti1, M. Puzzanghera2, G. Sozzi2 1CNR-IMM of Bologna, via Gobetti 101, I-40129 Bologna 2University of Parma, Department of Information Engineering,Parco Area delle Scienze

181A, I-43124 Parma, Italy

09:30 We1.04 Dahal Fabrication of Thick Free-Standing Lightly-Doped N-type 4H-SiC Wafers

Rajendra Dahal, Sauvik Chowdhury, Collin Hitchcock, T. Paul Chow and Ishwara B. Bhat

Electrical, Computer, and Systems Engineering Department Rensselaer Polytechnic

Institute, Troy, NY 12180, USA

09:45 We1.05 Stavrinidis Salicide-like process for the formation of gate and source contacts in 4H-SiC TI-

VJFETs

A. Stavrinidis1, G. Konstantinidis1, K. Vamvoukakis1, K. Zekentes1,2 1 MRG-IESL/ FORTH, Vassilika Vouton, PO Box 1385 Heraklion, Greece 2 Grenoble-INP, IMEP-LAHC, F-38000 Grenoble, France

10:00 We1.06 Roy Characterisation of 4H-SiC MOS capacitor with a protective coating for harsh

environments applications

S. K. Roy, J.U. Ibanez, A. O’Neill, N. G. Wright, A. B. Horsfall

School of Electrical and Electronic Engineering, Merz Court, Newcastle University,

Newcastle upon Tyne, NE1 7RU, United Kingdom




Wednesday, 28 Sept. 10:40 - 12:25 We2a Epitaxy

Session Chairs: Adolf Schoener (ASCATRON, Sweden) Rachel Myers-Ward (NRL, USA)


10:40 Invited We2a.01 Ferro 3C-SiC heteroepitaxy on various substrates

G. Ferro, V. Souliere

Universite Claude Bernard Lyon 1, CNRS, UMR 5615, Laboratoire des Multimateriaux

etInterfaces, 43 Bd du 11 Nov. 1918, 69622 Villeurbanne - France

11:10 We2a.02 Tsuchida V and Ti doping in 4H-SiC epitaxy for reduction of carrier lifetimes

Y. Miyazawa1, T. Tawara2,3, H. Tsuchida1 1Central Research Institute of Electric Power Industry (CRIEPI),2-6-1 Nagasaka,

Kanagawa 240-0196, Japan 2National Institute of Advanced Industrial Science and Technology (AIST), Onogawa,

Tsukuba 305-8569, Japan 3Fuji Electric Co., Ltd., Fuji, Hino 191-8502, Japan

11:25

We2a.03 La Via High growth rate 3C-SiC deposition from hetero to homo-epitaxy

F. La Via1, G. Litrico2,1, R. Anzalone3, A. Severino3, M. Salanitri3, S. Coffa3, 1 IMM-CNR, VIII Strada, 5, 95121 Catania, Italy 2 Laboratori Nazionali del Sud, via S. Sofia, 62, 95123 Catania, Italy 3 STMicroelectronics, Stradale Primosole, 50, 95121 Catania, Italy

11:40 We2a.04 Mochizuki Analysis of Trench-Filling Epitaxial Growth of 4H-SiC Based on Continuous Fluid

Approximation Including Gibbs-Thomson Effect

K. Mochizuki, S. Ji, R. Kosugi , K. Kojima, Y. Yonezawa, H. Okumura

National Institute of Advanced Industrial Science and Technology (AIST), Central 2-13,

1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568, Japan

11:55 We2a.05 Hens Epi Layer Uniformity of 3C-SiC Grown on Silicon by Hot Filament Chemical Vapor

Deposition

P. Hens1, R. Brow2, H. Robinson2, M. Cromar2, B. Van Zeghbroeck1,2 1Univ. of Colorado, Dept. of Electrical, Comp. and Energy Eng., CB 425, Boulder, CO

80309, USA 2BASiC 3C, Inc., 1830 Boston Ave., Longmont, CO 80501, USA

12:10 We2a.06 Stenberg Towards understanding fluorinated SiC CVD chemistry

P. Stenberg, P. Sukkaew, O. Danielsson, O. Kordina, H. Pedersen, E. Janzen

Department of Physics, Chemistry and Biology (IFM), Linkoping University, SE-581 83

Linkoping, Sweden

12:25 - 14:00 Lunch



Wednesday, 28 Sept. 10:40 - 12:25 We2b Devices, Power Conversion, Sensors

Session Chairs: Dethard Peters (Infineon Technologies AG, Germany) Mietek Bakowski (Acreo, Sweden)


10:40 We2b.01 Suzuki A Built-in High Temperature Half-bridge Power Module with Low Stray Inductance

and Low Thermal Resistance for In-Wheel Motor Application

Tatsuhiro Suzuki1, Mari Yamashita1, Tetsuya Mori1 , Sawa Araki1, Satoshi Tanimoto1,2,

Shota Iizuka2, Yuuta Niitsuma2, Kan Akatsu2 1Nissan ARC, Ltd., 1, Natsushima-cho, Yokosuka, 237-0061, Japan 2Shibaura Institute of Technology, 3-7-5, Toyosu, Koto-ku, 135-8548, Japan

10:55 We2b.02 Matlok Switching SiC Devices Faster and More Efficient Using a DBC Mounted Terminal

Decoupling Si-RC Element

S. Matlok1, T. Erlbacher1, F. Krach2, B. Eckardt1 1Fraunhofer IISB, Power Electronic Systems, Schottkystr. 10, 91058 Erlangen, Germany 2Friedrich-Alexander University (FAU), Electron Devices, Erlangen, Germany

11:10 We2b.03 Sadik Comparison of Thermal Stress during Short-Circuit in Different Types of 1.2 kV SiC

Transistors Based on Experiments and Simulations

D. P. Sadik1, J.-K. Lim2, J. Colmenares1, M. Bakowski2, H.-P. Nee1 1KTH, Royal Institute of Technology, EPE Departement, Stockholm, Sweden 2Acreo Swedish ICT AB, Electrum 236, 164 25 Kista, Sweden

11:25 We2b.04 Gammon Silicon-on-silicon-carbide power devices for harsh environment applications

P.M. Gammon1, C.W. Chan1, F. Gity2, T. Trajkovic3, V. Kilchytska4, L. Fan1, V. Pathirana3,

G. Camuso3, N. Udugampola3, K. Ben Ali4, D. Flandre4, P.A. Mawby1, and J.W. Gardner1 1 School of Engineering, University of Warwick, Coventry, CV4 7AL, UK 2 Tyndall National Institute at National University of Ireland, Cork, Prospect Row, Ireland 3 Cambridge Microelectronics Limited, Cambridge, United Kingdom 4 Universite Catholique de Louvain, Louvain-la-Neuve, Belgium

11:40 We2b.05 Minamisawa Characterization of a n+3C/n-4H SiC heterojunction diode

R. A. Minamisawa1, A. Mihaila1, I. Farkas2, V. S. Teodorescu3, V. V. Afanas’ev4, C.-W.

Hsu2, E. Janzen2 and M. Rahimo5 1Department of Power Electronics, ABB Corporate Research Center, CH-5405 Baden-

Dattwil, Switzerland 2Semiconductor Materials, IFM, Linkoping University, SE-58183 Linkoping, Sweden 3National Institute of Material Physics, R-077125 Bucharest-Măgurele, Romania 4Semiconductor Physics Laboratory, KU Leuven, 3001 Leuven, Belgium 5ABB Semiconductors, Fabrikstrasse 3, CH - 5600 Lenzburg, Switzerland.

11:55 We2b.06 Burenkov Optimization of 4H-SiC Photodiodes as Selective UV Sensors

C. D. Matthus1, A. Burenkov2, T. Erlbacher2 1Friedrich-Alexander University Erlangen-Nuremberg, Chair of Electronic Devices,

Cauerstrasse 5, 91058 Erlangen, Germany 2Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Schottky

strasse 10, 91058 Erlangen, Germany

12:10 We2b.07 Hou 4H-SiC PIN Diode as High Temperature Multifunction Sensor

S. Hou, P.-E. Hellstrom, C.-M. Zetterling, M. Ostling

KTH Royal Institute of Technology, 164 40 Kista, Sweden

12:25 - 14:00 Lunch



Wednesday, 28 Sept. 14:00 - 15:45 We3 Quantum Technology and Point Defects

Session Chairs: Michael Krieger (Friedrich-Alexander-Universitat Erlangen-Nurnberg, Germany) Bengt G. Svensson (University of Oslo, Norway)


14:00 Invited We3.01 Ohshima Creation and Functionalization of Defects in SiC by Irradiation and Thermal Treatment

T. Ohshima1, T. Honda1,2, S. Onoda1, T. Makino1, Y. Hijikata2, A. Lohrmann3, J.R. Klein3, B.C.

Johnson4, J.C. McCallum3, S. Castelletto5, B. Gibson6, H. Kraus7, V. Dyakonov7, G. Astakhov7 1National Institutes for Quantum and Radiological Science and Technology (QST), Takasaki,

Gunma370-1292, Japan 2Saitama University, Saitama 338-8570, Japan 3School of Physics, The University of Melbourne, Victoria 3010, Australia 4Centre for Quantum Computing and Communication Technology, School of Physics, The

University of Melbourne, Victoria 3010, Australia 5School of Engineering, RMIT University, Melbourne, Victoria 3001, Australia 6ARC Centre of Excellence for Nanoscale BioPhotonics, School of Applied Sciences, RMIT

University, Melbourne, Victoria 3001, Australia 7Experimental Physics VI, Julius Maximilian University of Wurzburg, Wurzburg, Germany

14:30 We3.02 Gali Identification of PL5-6 qubits in 4H-SiC

V. Ivady1,2, E. Janzen1, I. A. Abrikosov1,3,4, A. Gali2,5 1Department of Physics, Chemistry and Biology, Linkoping University, Linkoping, Sweden 2Wigner Research Centre for Physics, Hungarian Academy of Sciences, Budapest, Hungary 3Materials Modelling and Development Laboratory, National University of Science and

Technology ‘MISIS’, 119049 Moscow, Russia 4LACOMAS Laboratory, Tomsk State University, 634050 Tomsk, Russia 5Department of Atomic Physics, Budapest University of Technology and Economics, Hungary

14:45 We3.03 Ivanov Excitation Properties of the Divacancy in 4H and 3C SiC

I. G. Ivanov1, N. T. Son1, T. Ohshima2, E. Janzen1 1Linkoping University, Department of Physics, Chemistry & Biology,

IFM/Fysikhuset, 581 83 Linkoping, Sweden 2 National Institutes for Quantum and Radiological Science and Technology, 1233 Watanuki,

Takasaki, Gunma 370-1292, Japan

15:00 We3.04 von

Bardeleben

NV Centers in Silicon Carbide: identification, modeling and basic properties

H.J. von Bardeleben1, J.L.Cantin1, E.Rauls2, U.Gerstmann2 1Universite Pierre et Marie Curie, Institut des Nanosciences de Paris, Paris, France 2Universitat Paderborn, Physik Department, Warburgerstr., Paderborn, Germany

15:15 We3.05 Son Isolated Carbon Interstitial Ci-CC Defects in 4H-SiC

N.T. Son1, X.T. Trinh1,2, V. Ivady1, H. Nakane3, M. Kato3, T. Ohshima4, A. Gali5, I. Abrikosov1,

E. Janzen1 1Dept. of Physics, Chemistry and Biology, Linkoping University, Linkoping, Sweden 2Research Laboratories of Saigon Hi-Tech Park, Ho Chi Minh City, Vietnam 3Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of

Technology, Gokiso, Showa, Nagoya 466-8555, Japan 4National Institutes for Quantum and Radiological Science and Technology, 1233 Watanuki,

Takasaki, Gunma 370-1292, Japan 5Wigner Research Centre for Physics, Institute for Solid State Physics and Optics, Budapest,

PO-Box 49, H-1525, Hungary

15:30 We3.06 Galeckas Depth-resolved Carrier Lifetime Measurements in 4H-SiC Epilayers Monitoring Carbon

Vacancy Elimination

A. Galeckas1, H. M. Ayedh1, J. P. Bergman2, and B. G. Svensson1 1Department of Physics / Centre for Materials Science & Nanotechnology, University of Oslo,

Norway 2Department of Physics, Chemistry and Biology, Linkoping University, Linkoping, Sweden

15:45 - 16:00 Coffee break followed by WeP Poster Session 16:00 - 18:00



Thursday, 29 Sept. 8:30 - 10:15 Th1 MOS Interfaces

Session Chairs: Roberta Nipoty (CNR-IMM of Bologna,Italy) Tsunenobu Kimoto (Kyoto University, Japan)


08:30 Invited Th1.01 Yano Threshold Voltage Instability in 4H-SiC MOSFETs with Phosphorus-doped and

Nitrided Gate Oxides

Hiroshi Yano

Graduate School of Pure and Applied Sciences, University of Tsukuba 1-1-1 Tennodai,

Tsukuba, Ibaraki 305-8573, Japan

09:00 Th1.02 Ikeda Enhanced Oxidation of 4H-SiC Using SrTi1-xMgxO3-δ Catalyst

L. Li, A. Ikeda, T. Asano

Graduate School of Information Science and Electrical Engineering, Kyushu University

Moto-oka 744, Nishi-ku Fukuoka, Japan

09:15 Th1.03 Chanthaphan Structure and Surface Morphology of Thermal SiO2 Grown on 4H-SiC by Metal-

enhanced Oxidation using Barium

A. Chanthaphan, Y. Katsu, T. Hosoi, T. Shimura, H. Watanabe

Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

09:30 Th1.04 Cabello Improved 4H-SiC N-MOSFET interface passivation by combining N2O with Boron

diffusion oxidation

M.Cabello1, V.Soler1, N.Mestres2, J. Montserrat1, J.Rebollo1, J.Millan1, P.Godignon1 1 CNM CSIC, Campus UAB, 08193 Bellaterra, Spain 2 ICMAB CSIC, Campus UAB, 08193 Bellaterra, Spain

09:45 Th1.05 Kobayashi Reduction of Interface State Density in SiC(0001) MOS structures by Post-

Oxidation Ar Annealing at High Temperature

T. Kobayashi, J. Suda, T. Kimoto


10:00 Th1.06 Piluso 4H-SiC defects evolution by thermal processes

N. Piluso, M.A. DiStefano, S. Lorenti

STMicroelectronics, Stradale Primosole, 50, 95100 Catania, Italy




Thursday, 29 Sept. 10:40 - 12:10 Th2 Challenges and Perspectives

Session Chairs: Robert Stahlbush (NRL, USA) Phil Mawby (University of Warwick, UK)


10:40 Invited Th2.01 Stambouli Functionalisation of SiC Nano Wire Field Effect Transistors (NWFETs) for

advanced biosensor applications

V. Stambouli1, E. Bano2, F.Rossi3 1 Univ. Grenoble Alpes, IMEP-LAHC, F-38000 Grenoble, France 2 Univ. Grenoble Alpes, LMGP, F-38000 Grenoble, France 3 IMEM, Parco Area delle Scienze 37/A, 43100 Parma, Italy

11:10 Invited Th2.02 Peftitsis Challenges on Drive Circuit Design for Series-Connected SiC Power Transistors

PEFTITSIS Dimosthenis1, RABKOWSKI Jacek2, NEE Hans-Peter3, and UNDELAND

Tore1 1Dept. of Electric Power Engineering, NTNU Norwegian University of Science and

Technology, Trondheim, Norway 2Institute of Control and Industrial Electronics, Warsaw University of Technology,

Warsaw, Poland 3Power Electronics Research Group, Dept. of Electric Power and Energy Systems, KTH

Royal Institute of Technology, Stockholm, Sweden

11:40 Invited Th2.03 Cheung Silicon Carbide Micro-resonators

R. Cheung1, E. Mastropaolo1, G. Wood1, B. Sviličić2 1Scottish Microelectronics Centre, Institute for Integrated Micro and Nano Systems,

School of Engineering, University of Edinburgh, Scotland 2Faculty of Maritime Studies Rijeka, University of Rijeka, Rijeka, Croatia

Thursday, 29 Sept. 12:10 - 12:50 Closing Session


12:10 ICSCRM’17 Announcement

12:25 ECSCRM’18 Announcement

12:40 Dr Konstantinos Zekentes

Foundation for Research & Technology Hellas

(FORTH), Heraklion, Greece

Closing Remarks

12:50 - 15:00 Lunch



Poster Presentations Location: Olympic Hall ΙI

Monday, 26 Sept. 16:00 - 18:00 MoP Poster Session

MoP.03 - MoP.07 LN.04 - LN.05 Epitaxy

MoP.08 - MoP.19 LN.06 Processing

MoP.02, MoP.20 - MoP.38 LN.07 - LN.09 Characterisation

MoP.01, MoP.39 - MoP.58 LN.01 - LN.03 Devices and Circuits

MoP.01

Invited

Masuda

0.97 mΩ.cm2 / 820 V 4H-SiC Super Junction V-groove Trench MOSFET

T. Masuda 1, R. Kosugi1, T. Hiyoshi2 1Nation Institute of Advanced Industrial Science and Technology 16-1 Onogawa, Tsukuba, Ibaraki, Japan 2Sumitomo Electric Industries, Ltd.1-1-3 Shimaya, Konohana, Osaka 554-0024, Japan

MoP.02 Invited Csore

Density functional theory study on NV center in 4H-SiC

A. Csore1, A. Gali2 1Department of Atomic Physics, Budapest University of Technology and Economics, Budapest, Hungary 2Wigner Research Centre for Physics, Hungarian Academy of Sciences, Budapest, Hungary

MoP.03

Invited

Guo

Evaluation and reduction of epitaxial wafer defects resulting from carbon-inclusion defects in 4H-SiC substrate

L. Guo, K. Kamei, K. Momose, and H. Osawa

SHOWA DENKO K.K. Business Development Center, Power Semiconductor Project,

1505 Shimokagemori Chichibu-shi, Saitama 369-1893, Japan

MoP.04

Bosi

A study on 3C-SiC carbonization on misoriented Si substrates: from research to production scale reactors

M. Bosi1, C. Ferrari1, D. Nilsson2, P. J. Ward2 1 IMEM-CNR, Area delle Scienze 37A 43124 Parma, Italy 2 Anvil Semiconductors Ltd, Windmill Ind Est, Birmingham Road, Allesley, UK

MoP.05

Liao

Reduction of In-grown Stacking Faults in 4H-SiC epitaxy

Chen-Zi Liao, Hung-Wen Chen, Rong Xuan

SiC compound semiconductor project, Technology Development, Compound Business Division,

Episil-Precision Incorporation No.3, Innovation Road I, Hsinchu Science Park, Hsinchu, Taiwan, ROC

MoP.06

Feng

Reduction of In-Grown Stacking Faults in 150 mm 4H-SiC Epiwafers

G. Feng1, Y. Q. Sun1, W. N. Qian1, Y.Y. Li1, K.X. Li1, L. P. Lv1, J. Huang1, Z. X. Chen1, and J. H. Zhao2 1EpiWorld International Co., LTD, Xiamen 361101, China 2ECE Dept, Rutgers University, Piscataway, NJ 08902, USA

MoP.07

Fukada

Depth Profile of Doping Concentration in Thick and Low-Doped Epilayers

Keisuke Fukada, Naoto Ishibashi , Yoshihiko Miyasaka, Akira Bandoh, Kenji Momose and Hiroshi Osawab

SHOWA DENKO K.K., 1505 Shimokagemori, Chichibu, Saitama 369-1893, Japan

MoP.08

Iwasa

Formation of porous SiC and PL enhancement by Al2O3 passivation

Y. Iwasa1, W.Lu2, S.Kamiyama1, H.Ou2, T.Takeuchi1, M.Iwaya1, I.Akasaki1 1Department of Materials Science and Engineering, Meijo University, Tenpaku-ku, Nagoya, Japan 2Department of Photonics Engineering, Technical University of Denmark, DK-2800, Lyngby, Denmark

MoP.09

Alquier

Design, fabrication and characterizations of new peripheries for 4H-SiC JBS diodes

D. Alquier1, J. Biscarrat1,2, D. Valente1, F. Lanois2, E. Collard2, and J.F.Michaud1 1 Universite François Rabelais, Tours, GREMAN, CNRS-UMR 7347, France 2 STMicroelectronics, 16 rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2, France

MoP.10

Kueck

Investigation on Wet Etching Silicon Carbide Damaged by Ion Implantation

S. Guillemin1, R. Esteve1, C. Heidorn1, G. Unegg1, G. Reinwald1, M. Hartl1, D. Kueck1 1Infineon Technologies Austria AG, Siemenstrasse 2, Villach, Austria

MoP.11

Enokizono

Etching Mode in Electrochemical Etching of p-type 4H-SiC and Its Impact on Suppression of Etch Pits

T. Enokizono, T. Kimoto, and J. Suda

Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo, Kyoto, Japan



MoP.12

Li

Physical characterisation of 3C-SiC/SiO2 interface using XPS

F. Li1, O. Vavasour1, D. Martin1, M. Walker1, S. Russell1, M. Jennings1, Y. Sharma2, P. M. Gammon1, A. Perez-Tomas3,

P. A. Mawby1 1 University of Warwick, Coventry, CV4 7AL, UK. 2 Dynex Semiconductor Ltd, Doddington Road, Lincoln, LN6 3LF, UK. 3 ICN2, CSIC and the Barcelona Institute of Science and Technology, Campus UAB, Barcelona, Spain

MoP.13

Pezoldt

Nanostructuring of Graphene on Semi-Insulating SiC

B. Hahnlein1, M. Eckstein1, Th. Stauden1, J. Pezoldt1 1FG Nanotechnologie, Institut fur Micro- und Nanoelektronik und Institut fur Mikro- und Nanotechnologien MacroNano,

TU Ilmenau, Postfach 100565, 98684 Ilmenau, Germany

MoP.14

Habuka

A Method to Adjust Silicon Carbide Etching Rate Profile by Chlorine Trifluoride Gas

K. Nakagomi1, S. Okuyama1, D. Yajima1, H. Habuka1, T. Kato2 1Department of Chemical and Energy Engineering, Yokohama National Univ., Japan 2National Institute of Advanced Industrial Science and Technology, Japan

MoP.15

Hanafusa

High-temperature Oxidation of 4H-SiC by Thermal-Plasma-Jet

H. Hanafusa1, R. Ishimaru1, S.Higashi1 1 Graduate School of Advanced Sciences of Matter, Hiroshima University 1-3-1 Kagamiyama, Higashi-Hiroshima,

Hiroshima 739-8530, Japan

MoP.16

Hiramatsu

High Selectivity in SiC/SiO2 Etching by ICP-RIE in a SF6-O2-Ar Chemistry

K. Hiramatsu1, T. Okuda1, J. Suda1, and T. Kimoto1 1Dept. of Electronic Sci. & Eng., Kyoto University, Katsura, Nishikyo, Kyoto 615-8510, Japan

MoP.17

Kang

Effect of surface passivation on breakdown voltages of 4H-SiC Schottky barrier diodes

In Ho Kang1, Him Chan Park1, Moon Kyong Na1, Jung Hyun Moon1, Ogyun Seok1, Wook Bahng1, Sang Cheol Kim1,

Nam-Kyun Kim1, Chang Heon Yang2 1Power Semiconductor Research Center, Korea Electrotechnology Research Institute (KERI), Changwon, Korea 2R&D team, MAPLE SEMICONDUCTORS. INC., Pohang, Gyungbuk 790-784, Korea

MoP.18

Ikeda

Effects of Substrate Heating on Al Doping Performed by Irradiating Laser Beam to Al Film on 4H-SiC

A. Ikeda, R. Tsutsui, R. Sumina, H. Ikenoue and T. Asano

Graduate School of Information Science and Electrical Engineering, Kyushu University Moto-oka 744, Nishi-ku

Fukuoka, Japan

MoP.19

Isohashi

Planarization of SiC and GaN Wafers by Catalyst-Referred Etching Employing a Photo-electrochemical

Reaction

T. Inada1, A. Isohashi1, S. Matsuyama1, Y. Sano1, K. Yamauchi1,2 1Department of Precision Science and Technology, Graduated School of Engineering, Osaka University, Japan 2Research Center for Ultra-Precision Science and Technology, Graduated School of Engineering, Osaka University,

Japan

MoP.20

Strel’chuk

Effect of neutron irradiation on current-voltage characteristics of packaged diodes based on 6H-SiC pn

structures

A.M. Strel’chuk1, V.T. Gromov2, V.V. Zelenin1, A.N. Kuznetsov1, A.A. Lebedev1, N.G. Orlov2, N.S. Savkina1, V.P.

Shukailo2 1Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia 2Russian Federal Nuclear Center Zababakhin All-Russian Scientific Research Institute of Technical Physics, Russia

MoP.21

Berenguier

Lifetime Measurement in Silicon Carbide: Improvement of the Microwave Phase Shift Method

B. Berenguier1, E. Quiniou1, M. Felici1, O. Palais1, L. Ottaviani1, S. Bertaina1, A Lyoussi2 1IM2NP (UMR 7334) - Aix-Marseille Universite, 13397 Marseille Cedex 20, France 2CEA/DEN/CAD/DER/SPEx/LDCI, 13108 St Paul les Durance Cedex, France

MoP.22

Yen

Negative Bias Temperature Instability on Subthreshold Slope of SiC MOSFET

Cheng-Tyng Yen, Hsiang-Ting Hung, Chien-Chung Hung, Lurng-Shehng Lee, Chwan-Ying Lee, Yao-Feng Huang, Fu-

Jen Hsu, Tzong-Liang Chen

Hestia Power Incorporated, 10F-2, 27, Guanxin Rd, Hsinchu, 30072, Taiwan R.O.C.

MoP.23

Hamilton

Demonstrating the instability of Ni-SiC ohmic contacts and drain terminal metallization schemes aged at 300 °C

D. P. Hamilton1, F. Li2, S. A. Hindmarsh3, M. R. Jennings2, S. Russell2, R. A. McMahon1, P. A. Mawby2 1Warwick Manufacturing Group, University of Warwick, Coventry, United Kingdom 2School of Engineering, University of Warwick, Coventry, United Kingdom 3Electron Microscopy RTP, University of Warwick, Coventry, United Kingdom



MoP.24

Dutta

Dopant and Space Charge Mapping/ Spectroscopy of Semiconductor Device Cross-Sections

D.Dutta1,2, H. Rossmann1,2, U. Gysin2, R. Schelldorfer1, E. Mueller1, S.S.A Gerstl5, A. Schoner4, T. Glatzel2, S.

Reshanov4, L. Zhu2, S. Roy2, S. Goedecker2, M.Camarda1, J. Lehmann3, T. Jung1,2, H. Bartolf3, E. Meyer2 1Laboratory for Micro- and Nanotechnology, Paul Scherrer Insititut, Villigen, CH 2Department of Physics, University of Basel, Klingelbergstrasse 82, Basel, CH 3ABB Switzerland Ltd, ABB Corporate Research, Segelhofstrasse 1K, Baden-Dattwil, CH 4Ascatron, Kista S 5ScopeM- ETH, Zurich, CH

MoP.25

Simin

Coherence Properties of the Silicon Vacancy in SiC: from Ensemble to Single Defects

D.Simin1, H. Kraus1, A. Sperlich1, M. Trupke2, T. Ohshima3, G. V. Astakhov1, V. Dyakonov1,4 1Experimental Physics VI, Julius Maximilian University, 97074 Wuerzburg, Germany 2Vienna Center for Quantum Science and Technology, TU Wien, 1020 Vienna, Austria 3National Institutes for Quantum and Radiological Science and Technology (QST), Takasaki, Japan 4Zentrum fur Angewandte Energieforschung (ZAE) Bayern, 97074 Wuerzburg, Germany

MoP.26

Ebihara

Simulation of Incomplete Ionization on SiC devices during high speed switching

K. Ebihara, K. Kawahara, H. Watanabe, S. Nakata, S. Yamakawa

Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-honmachi, Amagasaki, HYOGO

661-8661, Japan

MoP.27

Rescher

Improved interface trap density close to the conduction band edge of a-face 4H-SiC MOSFETs revealed using

the charge pumping technique

G. Rescher1,2, G. Pobegen1, T. Aichinger3, T. Grasser2 1KAI GmbH, Europastrasse 8, 9524 Villach, Austria 2Institute of Microelectronics, TU Wien, Gusshausstrasse 27-29, 1040 Wien, Austria 3Infineon Austria AG, Siemenstrasse 2, 9500 Villach, Austria

MoP.28

Nagalyuk

Effect of neutron irradiation on SiC etching in KOH melt

E.N. Mokhov, O.P. Kazarova, S.S. Nagalyuk

Ioffe Institute, St. Petersburg, Russia

MoP.29

Lebedev

Effect of 3C-SiC Irradiation with 8 MeV protons

A.A. Lebedev1, B.Ya. Ber1 G.A.Oganesyan1, S.V. Belov1, N.V. Seredova1, I.P. Nikitina1, V.V.Kozlovski2 1 Ioffe Institute, Politekhnicheskaya 26, St. Petersburg, 194021 Russia 2 St. Petersburg State Polytechnic University, St. Petersburg, 195251 Russia

MoP.30

Das

Detection of crystal defects in high doped epitaxial layers and substrates by photoluminescence

H. Das1, S. Sunkari1, H. Naas2, M. Domeij2, A. Konstantinov2, F. Allerstam2, T. Neyer2 1Fairchild Semiconductor, 333 Western Ave, South Portland, Maine 04106, USA 2Fairchild Semiconductor, Isafjordsgatan 32C, 164 40, Kista-Stockholm, Sweden

MoP.31

Isshiki

Observation of Basal Plane Dislocation in 4H-SiC Wafer by Mirror Projection Electron Microscopy and Low-

energy SEM

T. Isshiki1, M. Hasegawa2, Y. Orai2, A. Miyaki2, T. Sato2 1 Kyoto Institute of Technology, Dept. Electrical Engineering and Electronics, Kyoto, 606-8585, JAPAN 2 Hitachi High-Technologies Corporation 882, Ichige, Hitachinaka, Ibaragi 312-8504, JAPAN

MoP.32

Pezoldt

High temperature growth of graphene on SiC studied by Raman and FTIR

B. Hahnlein1, M. Auge1 M. Eckstein1, J. Pezoldt1 1FG Nanotechnologie, Institut fur Mikro- und Nanotechnologien, TU Ilmenau, Ilmenau, Germany

MoP.33

Erlekampf

Lifetime engineering of 4H-SiC by thermal post-epi processing

J. Erlekampf, D. Kaminzky, P. Berwian, J. Friedrich

Fraunhofer IISB, Schottkystr. 10, 91058 Erlangen, Germany

MoP.34

Kondo

Photoluminescence Characterization of Carrier Recombination Centers in 4H-SiC Substrates by Utilizing Below

Gap Excitation

K. Kondo, N. Kamata, H. Yaguchi, S. Yagi, T. Fukuda and Z. Honda

Dept. Functional Materials Science, Saitama University, 255 Shimo-Okubo, Sakura-ku, Saitama, Japan

MoP.35

Vasilevskiy

On electron mobility in heavily nitrogen doped 4H-SiC

K. V. Vasilevskiy, S. K. Roy, N. Wood, A. B. Horsfall, and N. G. Wright

School of Electrical and Electronic Engineering, Newcastle University, Newcastle upon Tyne, UK

MoP.36

Konishi

Modeling of Stacking Fault Expansion Velocity of Body Diodes in 4H-SiC MOSFET

K. Konishi, R. Fujita, A. Shima, Y. Shimamoto

Center for Technology Innovation - Electronics, Research & Development Group, Hitachi, Ltd., Tokyo, Japan



MoP.37

Domeij

Analysis of interface trap density and channel mobility in 4H-SiC NMOS capacitors and lateral MOSFETs

M. Domeij1, J. Franchi1 K. Gumaelius1, K. Lee1, F. Allerstam1 1 Isafjordsgatan 32C, 16440 Kista, Sweden

MoP.38

Matsuura

Comparison of Electric Properties in Heavily Al-Doped 4H-SiC and Heavily Al- and N-Codoped 4H-SiC

H. Matsuura1, A. Takeshita1, D. Shinchi1, J. Yoshino1, T. Imamura1, K. Takano1, Y. Tsuguki1, K. Okuda1, S.Y. Ji2, K.

Eto2, K. Kojima2, T. Kato2, H. Okumura2 1 Osaka Electro-Communication University, Neyagawa, Osaka 572-8530, Japan 2 National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan

MoP.39

Kono

Impact of device structure on Neutron-Induced Single Event Burnout in SiC MOSFET

Hiroshi Kono1, Takao Noda1,Kenya Sano1, and Masakazu Yamaguchi1 1Storage & Electronic Devices Solutions Company, Toshiba Corp., 300, Ikaruga, Taishi-Cho, Ibo-Gun, Hyogo, Japan

MoP.40

Hedayati

High Temperature Integrated Frequency Divider in SiC

R. Hedayati1, L. Lanni1 M. Shakir1, C. M. Zetterling1 1KTH Royal Institute of Technology, 16440 Stockholm, Sweden

MoP.41 Vamvoukakis

Capacitances in 4H-SiC TI-VJFETs

M. Kayambaki1, K. Vamvoukakis1, A. Stavrinidis1, G. Konstantinidis1, K.Zekentes1,2 1 MRG-IESL/ FORTH, Vassilika Vouton, PO Box 1385 Heraklion, Greece 2 Grenoble-INP, IMEP-LAHC, F-38000 Grenoble, France

MoP.42

Kyoung

Improving Electrical Characteristics of 4H-SiC Junction Barrier Schottky Diode by Designing Trench Structure

Sinsu Kyoung 1,2, Eun-Sik Jung3, Tai-young Kang 2, and Man Young Sung 1 1Dept. of Electrical Engineering, Korea University Anam-Dong, Seongbuk-Gu, Seoul, Republic of Korea 2Powercubesemi, Inc. R&D Center, Samjeong-Dong, Ojeong-Gu, Bucheon-City, Gyeonggi-Do, Republic of Korea. 3Maplesemiconductor, Inc. R&D Center, Samjeong-Dong, Ojeong-Gu, Bucheon-City, Gyeonggi-Do, Republic of Korea

MoP.43

Afanasyev

Effect of neutron irradiation on epitaxial 4H-SiC PiN UV-photodiodes

A.V. Afanasyev1, V.A. Ilyin1, V.V. Luchinin1, S.A. Reshanov2, A. Schoner3, K.A. Sergushichev1, A.A. Smirnov1 1 Saint-Petersburg Electrotechnical University “LETI”, Professor Popov str. 5, St.-Petersburg, Russia 2Ascatron AB, Electrum 207, Kista, 16440, Sweden

MoP.44

Ogunniyi

Simulation Study of Switching Dependent Device Parameters of High Voltage 4H-SiC P-GTOs

Aderinto Ogunniyi1, James Schrock2, Miguel Hinojosa1, Heather O’Brien1, Stephen Bayne2, Sei-Hyung Ryu3 1U. S. Army Research Laboratory, 2800 Powder Mill Rd, Adelphi, MD 20783 USA 2Texas Tech University, 224 Electrical and Computer Engineering, Lubbock, TX 79409 USA 3Wolfspeed, a Cree Company, 3026 E. Cornwallis Rd, Research Triangle Park, NC 27709 USA

MoP.45

Huerner

Monolithically Integrated Solid-State-Circuit-Breaker for High Power Applications

A. Huerner1, T. Erlbacher2, A.J. Bauer2, L. Frey1,2 1 Fraunhofer IISB, Schottkystrasse 10, 91058 Erlangen, Germany 2 University of Erlangen-Nuremberg, Chair of Electron Devices, Cauerstrasse 6, 91058 Erlangen, Germany

MoP.46

Mihaila

On the influence of active area design on the performance of SiC JBS diodes

A. Mihaila1, R. A. Minamisawa1, L. Knoll1, V. K. Sundaramoorthy1, H. Bartolf1, E. Bianda1, G. Alfieri1, M. Rahimo2 1ABB Corporate Research, Segelhofstrasse 1K, CH-5405 Baden-Dattwil, Switzerland 2ABB Switzerland Ltd., Semiconductors CH-5600, Lenzburg, Switzerland

MoP.47

Bai

Design and Simulation of 4H-SiC MESFET Ultraviolet Photodetector with Optical Gain

Yun Bai1), Chengzhan Li2), Huajun Shen1), Chengyue Yang1), Yidan Tang1), Xinyu Liu1) 1 Microwave Devices and Integrated Circuits Department, the Institute of Microelectronics, Beijing, China 2 ZhuZhou CSR Times Electric CO., LTD., Zhuzhou, Hunan, China

MoP.48

Alexandrov

650V SiC Cascode: A Breakthrough for Wide-Bandgap Switches

P. Alexandrov, A. Bhalla, Z. Li, X. Li, J. Bendel, J. Dodge

United Silicon Carbide, Inc., 7 Deer Park Dr., Monmouth Junction, NJ 08852, USA

MoP.49

Baliga

Design and Fabrication of 1400V 4H-SiC Accumulation Mode MOSFETs (ACCUFETs)

Woongje Sung1, B. J. Baliga1

PowerAmerica Institute, North Carolina State University, Raleigh, NC 27695, USA

MoP.50

Chan

Numerical study of energy capability of Si/SiC LDMOSFETs

C.W. Chan1, F. Li1, P.A. Mawby1, and P.M. Gammon1, 1School of Engineering, University of Warwick, Coventry, CV4 7AL



MoP.51

Ichikawa

Performance improvement of 3C-SiC photocathodes by using co-catalysts

Naoto Ichikawa, Masashi Kato, Masaya Ichimura

Nagoya Institute of Technology, Gokiso, Showa Nagoya 466-8555, Japan

MoP.52

Chow

Comparative Evaluation of Commercial 1200V SiC power MOSFETs using Diagnostic I-V Characterization at

Cryogenic Temperatures

S. Chowdhury, C. W. Hitchcock and T. P. Chow

Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A.

MoP.53

Habersat

Feasibility of SiC Threshold Voltage Drift Characterization for Reliability Assessment in Production

Environments

D. B. Habersat1, R. Green1, A. J. Lelis1, 1Power Components Branch, Sensors and Electron Devices Directorate, U.S. Army Research Laboratory, Adelphi, MD

20783, USA

MoP.54

Bange

Chemical stability of Si-SiC core-shell nanostructures under physiological conditions

R. Bange1,2, E. Bano1, L. Rapenne2, M. Negri3, M. Bosi3, M. Legallais1,2, B. Salem4, T. Baron4, V. Stambouli2 1IMEP-LaHC, 3 Parvis Louis Neel, 38016 Grenoble Cedex 1, France 2LMGP, 3 Parvis Louis Neel, 38016 Grenoble Cedex 1, France 3IMEM, Parco Area delle Scienze 37/A, 43100 Parma, Italy 4LTM, CEA-Leti, 17 avenue des Martyrs, 38054 Grenoble cedex 9, France

MoP.55

Brezeanu

Barrier stability of Pt/4H-SiC Schottky diodes used for high temperature sensing

G. Pristavu1, G. Brezeanu1, M. Badila1, F.Draghici1, R. Pascu2, A. Pribeanu3 1 University “POLITEHNICA” Bucharest, Romania 2 IMT Bucharest, Romania 3 CEPROCIM S.A. Bucharest, Romania

MoP.56

Rong

Combined High temperature N2O and Phosphorus Passivations for 4H-SiC MOSFETs

H. Rong1, Y. Sharma2, P. Mawby3 1,3School of Engineering, University of Warwick, Coventry, United Kingdom 2Dynex Semiconductor Ltd, Lincoln, United Kingdom

MoP.57

Amini

Moghadam

The effect of charge redistribution on flat-band voltage turnaround in 4HSiC MOS capacitors

H. Amini Moghadam1, S. Dimitrijev1, J. Han1, D. Haasmann1, and A. Aminbeidokhti1, 1Queensland Micro- and Nanotechnology Centre, Griffith University, QLD 4111, Australia

MoP.58

Hazdra

Lifetime Control in SiC PiN Diodes Using Radiation Defects

P. Hazdra1 and S. Popelka1, 1Department of Microelectronics, Faculty of Electrical Engineering, Czech Technical University in Prague, Technicka 2,

CZ-16627 Prague 6, Czech Republic

LN.01

Niwa

Demonstration of 10 kV SiC Hybrid Unipolar/Bipolar Operating Diodes

H. Niwa1, J. Suda1, T. Kimoto1 1 Department of Electronic Science and Engineering, Kyoto University, Japan

LN.02

Lee

Investigation of Electrical Characteristics of Novel 4H-SiC Junction Barrier Schottky Diode Structures

Sheng-Zhong Wang, Kung-Yen Lee, Yuan-Heng Liu, Le-Shan Chan

Department of Engineering Science and Ocean Engineering, National Taiwan University, Taipei, Taiwan

LN.03

Litrico

4H-SiC detectors for nuclear physics

G. Litrico1, S. Privitera2, F. La Via2, L. Calcagno3, G. Lanzalone1,4, A. Muoio1,5, C. Agodi1, F. Capuzzello1,3, M.

Cavallaro1, D. Carbone1, S. Tudisco1 1 Laboratori Nazionali del Sud, via S. Sofia, 62, 95123 Catania, Italy 2 IMM-CNR, VIII Strada, 5, 95121 Catania, Italy 3 Physics Department, Catania University, Via S.Sofia 64 Catania (Italy) 4 Universita Kore Enna, Via delle Olimpiadi, 94100 Enna (Italy) 5 Phys. Department, Messina University Viale D’Alcontres 31, 98166 Messina (Italy)

LN.04

H J Kim

Enhancing Polytype Stability of 4H-SiC Homoepitaxial Growth on On-axis Substrates by Controlling Micro-

steps

Hyunwoo Kim1, Hunhee Lee2, Suhyeuong Lee1, Hong Jeon Kang1, Young Seok Kim, Hyeong Joon Kim1 1Department of Material Science and Engineering, College of Engineering, Seoul National University, Korea 2Samsung electronics, 1, samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 445-701, Korea

LN.05

Hara

150 mm Silicon Carbide Selective Embedded Epitaxial Growth Technology by CVD

K. Hara, H. Fujibayashi, Y. Takeuchi, S. Omae

DENSO CORPORATION, Kariya, Aichi 448-8681, Japan



LN.06

Miyagawa

The formation of periodic nanostructures and singular microstructures induced by femtosecond laser

irradiation

Reina Miyagaw and Osamu Eryu

Nagoya Institute of Technology Gokiso, Showa Nagoya 466-8555, JAPAN

LN.07

Ichikawa

Dependence of surface recombination velocity for 4H-SiC on contacted aqueous solution

Yoshihito Ichikawa 1, Masaya Ichimura 1, Tsunenobu Kimoto 2, Masashi Kato 1 1Nagoya Institute of Technology, Gokiso, Showa Nagoya 466-8555, Japan 2Kyoto University, Katsura, Nishikyo, Kyoto 615-8510, Japan

LN.08

Soroush

Nitrogen Vacancy in Silicon Carbide (SiC)

Soroush Abbasi Zargaleh 1, 2 1Sorbonne Universite ́s, UPMC Universite ́ Paris 06, CNRS-UMR 7588, Institut des NanoSciences de Paris, France 2Laboratoire Aime ́ Cotton, CNRS, Univ. Paris-Sud, ENS Cachan, Universite ́ Paris-Saclay, France

LN.09 Iwahashi

A study on the extension of stacking faults in 4H-SiC pn diodes under high current pulse stress

Yohei Iwahashi1, Masaki Miyazato 1, Masaaki Miyajima 1, Yoshiyuki Yonezawa 1, Tomohisa Kato 1, Hirokazu Fujiwara 2, Kimimori Hamada 2, Akihiro Otsuki 3 and Hajime Okumura 1 1National Institute of Advanced Industrial Science and Technology (AIST) 16-1 Onogawa, Tsukuba, Ibaraki, Japan 2 Toyota Motor Corporation, 543 Kirigahora, Nishihirose-cho, Toyota, Aichi, Japan 3Fuji Electric Co. Ltd., 1 Fujimachi, Hino, Tokyo, Japan



Tuesday, 26 Sept. 16:00 - 18:00 TuP Poster Session

TuP.01 - TuP.14 LN.13 - LN.14 Characterisation

TuP.15 - TuP.30 LN.10 - LN.12 Devices and Circuits

TuP.31 - TuP.44 LN.15 - LN.18 Bulk Growth

TuP.45 - TuP.56 Epitaxy

TuP.01

Kocher

Systematic characterization of doping profiles in 4H-SiC by point contact current voltage measurements

M. Kocher1, M. Niebauer1, M. Rommel1, V. Haeublein1, A. Bauer1, 1Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Schottkystrasse 10, Erlangen, Germany

TuP.02

Puzzanghera

DLTS study on ion implanted and 1950°C annealed p+-i-n 4H-SiC vertical diodes

H. M. Ayedh1, M. Puzzanghera2, B. G. Svensson1, and R. Nipoti3 1University of Oslo, Department of Physics/SMN, N-0316 Oslo, Norway 2University of Parma, Dept. Inform. Eng., Parco Area Scienze 181A, I-43124 Parma, Italy 3CNR-IMM of Bologna, via Gobetti 101, I-40129 Bologna

TuP.03

Idris

Electrical stability impact of gate oxide in channel implanted SiC NMOS and PMOS transistors

M.I. Idris1*, M.H. Weng1,2, H.-K. Chan1, A.E. Murphy2, D.A. Smith2, R.A.R. Young2, E.P. Ramsay2, D.T. Clark2,

N.G. Wright1, A.B. Horsfall1 1 School of Electrical and Electronic Engineering, Newcastle University, Newcastle, NE1 7RU, U.K. 2 Raytheon UK, Glenrothes, Fife, KY7 5PY, U.K.

TuP.04

Mihaila

Point defects investigation of high-energy proton irradiated SiC p+-i-n diodes

G. Alfieri1, A. Mihaila1, R. Nipoti2, M. Puzzanghera3, G. Sozzi3, P. Godignon4, J. Millan4 1ABB Corporate Research, Segelhofstrasse 1K, 5405 Baden-Dattwil, Switzerland 2CNR-IMM of Bologna, via Gobetti 101, I-40129 Bologna, Italy 3University of Parma, Dept. Inform. Eng., Parco Area Scienze 181A, I-43124 Parma, Italy 4National Center of Microelectronics-Barcelona, Campus UAB, 08193, Bellaterra-Barcelona, Spain

TuP.05

Mori

Characterization of nitrogen at SiO2/SiC(000-1) interface

Daisuke Mori1, Yoshiki Oyama2, Kei Inoue1, Hideaki Teranishi1, Aki Takigawa1 , Takayuki Hirose1, Akira Saito1, and

Fumihiko Matsui2 1 Fuji Electric Co., Ltd., 1, Fuji-machi, Hino-city, Tokyo, 191-8502 Japan 2Graduate School of Materials Science, Nara Institute of Science and Technology, Japan

TuP.06

Yao

Elementary screw and mixed-type dislocations in 4H-SiC characterized by X-ray topography taken with six

equivalent 11-28 g-vectors and a comparison to etch pit evaluation

Y. Yao1, Y. Ishikawa1, Y. Sugawara1, Y. Takahashi2, K. Hirano2 1 Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta, Nagoya 456-8587, Japan 2 High Energy Accelerator Research Organization (KEK), 1-1 Ooho, Tsukuba 305-0801, Japan

TuP.07

Kim

Control of trench shape for development of high-efficiency 4H-SiC power semiconductor

K. H. Kim1, O. Seok2, I. H. Kang2, J. H. Moon2, N. K. Kim2, Y. H. Kang1, E. S. Jung1 and C. H. Yang1 1SiC R&D Center, Maple Semiconductor Inc., Seokcheon-ro, Ojeong-gu, Bucheon-si,Gyeonggi-do, Republic of Korea 2Power Device Research Center, Korea Electrotechnology Research Institute(KERI), 12,bulmosan-ro 10 beon-gil,

Seongsan-gu, Changwon-si, Gyeongsangnam-do, 51543, Republic of Korea

TuP.08

Tabuchi

SEM and ECC imaging study of step-bunched structure on 4H-SiC epitaxial layers

Y. Tabuchi1, K. Ashida1, T. Kaneko1,2, N. Ohtani1,2, M. Katsuno3, H. Tsuge3, S. Sato3, T. Fujimoto3 1 Kwansei Gakuin University, School of Science and Technology 2-1 Gakuen, Sanda, Hyogo, Japan 2 Kwansei Gakuin University, R&D Center for SiC Materials and Processes 2-1 Gakuen, Sanda, Hyogo, Japan 3 Nippon Steel & Sumitomo Metal Corporation, Advanced Technology Research Laboratories 20-1 Shintomi, Futtsu,

Chiba 293-8511, Japan

TuP.09

Fukunaga

Micro-Raman scattering study of stress fields in high-purity homo-epitaxial layer on nitrogen-doped 4H-SiC

substrate

D. Fukunaga1, N. Ohtani1,2, M. Katsuno3, H. Tsuge3, S. Sato3, T. Fujimoto3, 1 Kwansei Gakuin University, School of Science and Technology 2-1 Gakuen, Sanda, Hyogo, Japan 2 Kwansei Gakuin University, R&D Center for SiC Materials and Processes 2-1 Gakuen, Sanda, Hyogo, Japan 3 Nippon Steel & Sumitomo Metal Corporation, Advanced Technology Research Laboratories 20-1 Shintomi, Futtsu,




TuP.10

Woodend

Cryogenic Characterisation and Modelling of Commercial SiC MOSFETs

L.J. Woodend1, P.M. Gammon1, V.A. Shah1, A. Perez-Tomas3, F. Li1, D.P. Hamilton1, M. Myronov2 and P.A. Mawby1 1 School of Engineering University of Warwick, Coventry, CV4 7AL, UK 2 Department of Physics, University of Warwick, Coventry, CV4 7AL, UK 3 Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and the Barcelona Institute of Science and

Technology, Campus UAB, Bellaterra, 08193 Barcelona, Spain

TuP.11

Wu

Control of Etching Process for SiC Defect Analysis

P. Wu1, X. Xu1, I. Zwieback1, J. Hostetler2 1II-VI Incorporated, 20 Chapin Rd., Suite 1005, Pine Brook, NJ 07058, USA 2United Silicon Carbide, Inc., 7 Deer Park Drive, Suite E, Monmouth Junction, NJ 08852, USA

TuP.12

Ma

Characterization of B-implanted 3C-SiC for intermediate band solar cells

Quanbao Ma1, Patricia Carvalho2, Augustinas Galeckas1, Alexander Azarov1, Sigurd Hovden2, Annett Thøgersen2, Daniel

N. Wright2, Spyros Diplas2, Ole M. Løvvik2, Valdas Jokubavicius3, Jianwu Sun3, Mikael Syvajarvi3, Bengt G. Svensson1 1. University of Oslo, Department of Physics, Centre for Materials Science and Nanotechnology, Norway 2. SINTEF, Forskningsveien 1, N-0373 Oslo, Norway 3. Linkoping University, Department of Physics, Chemistry and Biology, SE-58183 Linkoping, Sweden

TuP.13

Lebedev

Effect of High-Energy Electrons on Conductivity Compensation in n-4H-SiC

V. V. Kozlovski1, A. A. Lebedev2, L.F. Makarenko3 1St. Petersburg State Polytechnic University, Politekhnicheskaya 29, St. Petersburg, 195251Russia 2Ioffe Institute, Politekhnicheskaya 26, St. Petersburg, 194021 Russia 3Belorussian State University, Independence Ave. 4, Minsk, 220030 Belarus

TuP.14

Elpelt

Employing Scanning Spreading Resistance Microscopy (SSRM) for improving TCAD simulation accuracy of

silicon carbide

R. Elpelt1, B. Zippelius1, S. Doering2, U. Winkler2 1Infineon Technologies AG, Schottkystr. 10, 91058 Erlangen, Germany 2Infineon Technologies Dresden GmbH, Konigsbrucker Strasse 180, 09099 Dresden, Germany

TuP.15

Elahipanah

Design Optimization of a High Temperature 1.2-kV 4H-SiC Buried Grid JBS Rectifier

H. Elahipanah1,3, N. Thierry-Jebali1, S.A. Reshanov1, W. Kaplan1, A. Zhang1, J.-K. Lim2, M. Bakowski2, M. Ostling3, A.

Schoner1 1Ascatron AB, Electrum 207, SE-164 40, Kista, Sweden 2Acreo Swedish ICT AB, Electrum 236, SE-164 40, Kista, Sweden 3 KTH Royal Institute of Technology, Isafjordsgatan 22 164 40 Kista, SWEDEN

TuP.16

Kim

Effect of Trench corner Shape on Breakdown Characteristics of the 4H-SiC Trench MOSFET

H.W.Kim1, W. Bahng1, O. Seok1, J. H. Moon1, N.K.Kim1 and J.Y.Jo2 1Power Semiconductor Research Center, KERI, 12, bulmosan-ro 10beon-gil, Seongsan-gu, Changwon,Republic of Korea 2Department of Electrical and Computer Engineering, Ajou University, Suwon, 16499, Republic of Korea

TuP.17

Schoeck

4.5 kV SiC Junction Barrier Schottky Diodes with Low Leakage Current and High Forward Current Density

J. Schoeck1, J. Buettner1, M. Rommel1, T. Erlbacher1, A. Bauer1 1Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Erlangen, Germany

TuP.18

Zhang

Next Generation 1700 V, 20 mΩ 4H-SiC DMOSFETs with Low Specific On-resistance and High Switching Speed

Q. J. Zhanga, C. Jonas, C. Capell, G. Wang, S. Pickle, P. Butler, D. Lichtenwalner, E. Van Brunt, S. Ryu, J. Richmond, B.

Hull, J. Casady, S. Allen, and J. Palmour

Wolfspeed, a Cree Company, RTP, NC 27709, USA

TuP.19

Chatty

High Current 900V SiC Schottky Diodes Manufactured on 150mm SiC Wafers for Automotive Applications

Kiran Chatty1, Sujit Banerjee1, and Kevin Matocha1, 1Monolith Semiconductor Inc., 408 Fannin Ave, Round Rock, TX-78664, USA

TuP.20

Kitai

Demonstration of 13 kV-Class Junction Barrier Schottky Diodes in 4H-SiC with Three-Zone Junction Termination

Extension

H. Kitai1, Y. Hozumi1, H. Shiomi1, M. Furumai2, K. Omote3, K. Fukuda1 1National Institute of Advanced Industrial Science and Technology (AIST) 16-1 Onogawa, Tsukuba, Ibaraki, Japan 2Sumitomo Electric Industries, Ltd., 1-1-1, Koyakita, Itami, Hyogo 664-0016, Japan 3Rigaku Corporation, 3-9-12, Matsubara-cho, Akishima, Tokyo 196-8666, Japan



TuP.21

Ottaviani

Fast neutron detection up to 500°C with SiC-based sensors

D. Szalkai1, L. Ottaviani2, U. Fischer1, F. Issa3, A. Klix1, V. Vervisch2, M. Lazar4, A. Lyoussi5 1Karlsruhe Institute of Technology, Institute of Neutron Physics and Reactor Technology, Germany 2IM2NP (UMR CNRS 7334) - Aix-Marseille University, Case 231 -13397 Marseille Cedex 20, France 3European Spallation Source, P.O. Box 176, SE-22100 Lund, Sweden 4AMPERE (UMR 5005) - INSA de Lyon, 21 Av. Capelle, 69621 Villeurbanne, France 5CEA, DEN, Departement d’Etudes des Reacteurs, Service de Physique Experimentale, Laboratoire Dosimetrie Capteurs

Instrumentation, 13108 Saint-Paul-lez-Durance, France.

TuP.22

Di Benedetto

Novel Advanced Analytical Design Tool for 4H-SiC VDMOSFET Devices

L. Di Benedetto1, G.D.Licciardo1, T. Erlbacher2, A.J. Bauer2, A.Rubino1 1 Dept. of Industrial Engineering, University of Salerno, Italy 2 Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Germany

TuP.23

Albrecht

Experimental verification of solid-state circuit breaker based on Bipolar-Injection Field Effect-Transistor (BiFET)

M. Albrecht1, A. Huerner2, T. Erlbacher2, A.J. Bauer2, L. Frey1,2 1 Chair of Electron Devices, Cauerstrasse 6, 91058 Erlangen, Germany 2 Fraunhofer IISB, Schottkystrasse 10, 91058 Erlangen, Germany

TuP.24

Muting

Comprehensive and Detailed Study on the Modelling of Commercial SiC Power MOSFET Devices Using TCAD

J. Muting, B. Kakarla, U. Grossner

Advanced Power Semiconductor Laboratory, ETH Zurich, Physikstrasse 3, 8092 Zurich, Switzerland

TuP.25

Neudeck

Experimentally Observed Electical Durability of 4H-SiC JFET ICs Operating from 500 °C to 700 °C

P. G. Neudeck1, D. J. Spry1, L. Chen2, D. Lukco3, C. W. Chang3 and G. M. Beheim1 1NASA Glenn Research Center, 21000 Brookpark Rd. MS 77-1, Cleveland, OH 44135 USA 2OAI, NASA Glenn, 21000 Brookpark Rd. MS 77-1, Cleveland, OH 44135 USA 3Vantage Partners LLC, NASA Glenn, 21000 Brookpark Rd. MS 77-1, Cleveland, OH 44135 USA

TuP.26

Seok

Systematic Design and Fabrication of FLRs for 3.3 kV 4H-SiC DMOSFETs

O. Seok1, S. Kim1, I. H. Kang1, J. H. Moon1, M. Na1, H. W. Kim1, H. Park1, S. B. Yun2, Y. H. Kang2, C. H. Yang2,N. K. Kim1 1Korea Electrotechnology Research Institute, Seongsan-gu 51543, Changwon, Republic of Korea 2Maple Semiconductor, Nam-gu 37673, Pohang, Republic of Korea

TuP.27

Korolkov

SiC Schottky Diode Rectifier Bridge Represented as the Diffusion-Welded Stack

O. Korolkov1, R. Land1, N. Sleptsuk1, J. Toompuu1, T. Rang1 1Thomas Johann Seebeck Department of Electronics, Tallinn University of Technology, Tallinn, Estonia

TuP.28

Baliga

Understanding High Temperature Static and Dynamic Characteristics of 1.2 kV SiC Power MOSFETs

Siyang Liu1,2, Yifan Jiang2, Woongje Sung2, Xiaoqing Song2, B.J. Baliga2, Weifeng Sun1, Alex Q. Huang2 1National ASIC System Engineering Research Center, Southeast University, China 2NSF FREEDM Systems Center, North Carolina State University, NC, USA

TuP.29

Ivanov

Collector conductivity modulation in 1200-V 4H-SiC BJTs (modeling)

P. A. Ivanov1, V. S. Yuferev1, M. E. Levinshtein1, Jon Q. Zhang2, J. W. Palmour2

1Ioffe Institute St. Petersburg, 26 Politekhnicheskaya, 194021 Russia 2Wolfspeed, A Cree company, 3026 East Cornwallis Rd., Research Triangle Park, NC 27709, USA

TuP.30

Lelis

Short-Circuit Robustness Testing of SiC MOSFETs

R. Green1, D. P. Urciuoli1, A. J. Lelis1, 12800 Powder Mill Road, Adelphi, MD. 20783, USA

TuP.31

Bosi

Parameters affecting n-type doping in 3C-SiC

M. Negri1, M. Bosi2, G. Attolini2, T. Rimoldi3, D. Orsi3, L. Cristofolini3, E. Buffagni2, C. Ferrari2, G. Salviati2 1 Laboratoire des Materiaux Semiconducteurs, Ecole Polytechnique Federale de Lausanne,Lausanne, Switzerland 2 IMEM-CNR, Area delle scienze 37A, 43124 Parma, Italy 3 Dipartimento di Fisica e Scienze della Terra, Universita degli Studi di Parma, Italy

TuP.32

Kim

Quality Improvement of 4” 4H-SiC crystal by using modified seed adhesion method

Jung-Woo Choi1, Jong-Hwi Park1, Jung-Doo Seo1, Jung-Gyu Kim1, Myung-Ok Kyun1, Kap-Ryeol Ku1, Hwang-Ju Kim2,

Yeon-Suk Jang2, Won-Jae Lee2 1 SKC, Advanced Technology R&D Center, Jeongia-1 dong, Jangan-gu, Suwon-si, Gyeonggi-do, Korea 2 Department of Advanced Materials Engineering, Dong-Eui University, 176, Eomgwang-ro, Busanjin-gu, Busan, Korea



TuP.33

D.-H. Lee

Process Parameters to Influence on the Resistivity Level of SiC Single Crystal

Dong-Hoon Lee1, Hwang-Ju Kim1, Young-Gon Kim1, Su-Hoon Choi1, Mi-Seon Park1, Yeon-Suk Jang1, Won-Jae Lee1,

Jung-Woo Choi2, Jong-Hwi Park2, Jung-Doo Seo2, Jung-Gyu Kim2, Myung-Ok Kyun2, Kap-Ryeol Ku2, Seong-Min Jeong3,

Myung-Hyun Lee3, Younghee Kim3, Si-Hyun Lee4 1Department of Advanced Materials Engineering, Dong-Eui University, 176, Eomgwang-ro, Busanjin-gu, Busan, Korea 2SKC, Advanced Technology R&D Center, Jeongia-1 dong, Jangan-gu, Suwon-si, Gyeonggi-do, 440-301, Korea 3Energy and Environmental Division, Korea Institute of Ceramic Engineering and Technology, Jinju 52851, Korea 4Morgan, 394, Dunchon-daero, Jungwon-gu, Seongnam-si, Gyeonggi-do, 13229, Korea

TuP.34

Ramm

Role of Tantalum in Polytype Stability of 3C-SiC Grown on 6H-SiC

V. Jokubavicius1, M. Syvajarvi1, R. Yakimova1, A.V. Kulik2, M.V. Bogdanov2, M.S. Ramm2 1Department of Physics, Chemistry and Biology (IFM), Semiconductor Materials Division, Linkoping University, 58183

Linkoping, Sweden 2STR Group, Inc. - Soft-Impact, Ltd., Engels av. 27, P.O. Box 89, 194156 St. Petersburg, Russia

TuP.35

Nagalyuk

Reduction dislocation density in the bulk silicon carbide crystals grown by PVT on the profiled seeds

E.N.Mokhov, S.S. Nagalyuk

Ioffe Institute, St. Petersburg, 194021, Russia

TuP.36

Ohtomo

Investigation of the surface morphology and stacking fault nucleation on the (0001_)C facet of heavily nitrogen-

doped 4H-SiC boules

K. Ohtomo1, N. Matsumoto1, N. Ohtani1,2, M. Katsuno3, H. Tsuge3, S. Sato3, T. Fujimoto3, 1 Kwansei Gakuin University, School of Science and Technology 2-1 Gakuen, Sanda, Hyogo, Japan 2 Kwansei Gakuin University, R&D Center for SiC Materials and Processes 2-1 Gakuen, Sanda, Hyogo 669-1337, Japan 3 Nippon Steel & Sumitomo Metal Corporation, Advanced Technology Research Laboratories 20-1 Shintomi, Futtsu,


TuP.37

Kawanishi

In-situ observation of competition between spiral growth and step-flow growth during solution growth of 4H-SiC

S. Kawanishi1,2, T. Yoshikawa1 1 Institute of Industrial Science, The University of Tokyo 4-6-1 Komaba, Meguro-ku, Tokyo, Japan 2 Currenty; Institute of Multidisciplinary Research for Advanced Materials, Tohoku University 2-1-1, Katahira, Aoba-ku,

Sendai, Miyagi 980-8577, Japan

TuP.38

Byeon

SiC single crystals grown by high temperature chemical vapor deposition using methyltrichlorosilane as a

precursor

Chang-Hyoung Yoo1,2, Dae-Seop Byeon1, Myung-Hyun Lee1, Won-Seon Seo1, Won-Jae Lee3, Cheol-Woong Yang2,

Seong-Min Jeong1 1Energy and Environment Division, Korea Institute of Ceramic Engineering and Technology, Jinju, Korea 2School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Korea 3Department of Materials and Component Engineering, Dong-Eui University, Busan 47340, Korea

TuP.39

Ha

Investigation into carbon supply in top seeded solution growth of SiC bulk crystals

Minh-Tan Ha1,2, Myung-Hyun Lee1, Younghee Kim1, Cheol-Jin Kim2, Won-Jae Lee3, Seong-Min Jeong1 1Energy & Environmental Division, Korea Institute of Ceramic Engineering & Technology, Jinju, Korea 2Department of Ceramic Engineering, Gyeongsang National University, Jinju 52828, Korea 3Department of Materials and Component Engineering, Dong-Eui University, Busan 47340, Korea

TuP.40

Hori

Formation of basal plane dislocations introduced by collision of macrosteps on growth surface during SiC

solution growth

T. Hori1, K. Murayama2, S. Harada1,2, S. Xiao1, M. Tagawa1,2, T. Ujihara1,2, 1Department of Materials Science and Engineering, Nagoya University, Furo-cho, Chikusa-ku, Japan 2Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability

(IMaSS), Nagoya University, Furo-cho, Chikusa-ku, Japan

TuP.41

Daikoku

Effect of Al addition in Si-Cr melt by real-time observation of 4H-SiC growth interface

H. Daikoku1,2 , S. Kawanishi1,3,T. Yoshikawa1 1 Institute of Industrial Science, The University of Tokyo 4-6-1 Komaba, Meguro-ku, Tokyo, Japan 2 Higashifuji Technical Center, Toyota Motor Corporation 1200, Mishuku, Susono, Shizuoka, Japan 3 Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Miyagi, Japan

TuP.42

Yang

Growth and Temperature-depending Raman characterization of different nitrogen-doped 4H-SiC crystals

X. L. Yang, X. F. Chen, P. Yan, X. J. Xie, X. B. Hu, X. G. Xu

State Key Laboratory of Crystal Materials, Shandong University Jinan 250100, China

Collaborative Innovation Center for Global Energy Interconnection,Jinan, Shandong 250061, China

TuP.43

Chen

Reduction of Dislocation Density of SiC Crystals grown on Seeds After H2 etching

X.F.Chen, F.S.Zhang, X.L.Yang, Y.Peng, X.J.Xie, X.B.Hu, X.G.Xu

State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

Collaborative Innovation Center forGlobal Energy Interconnection,Jinan,Shandong250061,China



TuP.44

Makarov

Growth of 4 and 6 inch 4H-SiC in TaC crucibles and characterization of the wafers for device applications

Yu. Makarov1, D. Litvin2, A. Vasiliev2, S. Nagalyuk2 1 Nitride Crystals Inc,1607 Swinton Ln., Richmond, VA 23238, USA 2 Nitride Crystals Ltd, 27 Engels Ave., St.Peteburg,194166, Russia

TuP.45

Habuka

Susceptor Coating Materials Applicable for SiC Reactor Cleaning

K. Shioda1, H. Habuka1, Y. Takahashi2 1Yokohama National University, 79-5 Tokiwadai Hodogaya Yokohama 240-8501 Japan

2Kanto Denka Kogyo Co., Ltd, Kanda Awaji-cho Chiyoda Tokyo 101-0063 Japan

TuP.46

Ishibashi

High-Quality 100/150 mm p-type 4H-SiC Epitaxial Wafer for High-voltage Bipolar Devices

Naoto Ishibashia, Keisuke Fukada, Akira Bandoh, Kenji Momose and Hiroshi Osawab


TuP.47

Hassan

On-axis Homoepitaxial Growth of V-Doped Semi-insulating 4H-SiC

J. Hassan1, R. Karhu1, B. Magnusson2, O. Danielsson1, O. Kordina1 and E. Janzen1 1Department of Physics, Chemistry and Biology, IFM. Linkoping University, Sweden 2Norstel AB, Ramshallsvagen 15 SE-602 38 Norrkoping, Sweden

TuP.48

Lilja

Influence of n-type Doping Levels on Carrier Lifetime in 4H-SiC Epitaxial Layers

L. Lilja, I. Farkas, J. Hassan, E. Janzen, J.P. Bergman

Department of Physics, Chemistry and Biology, Linkoping University, Sweden

TuP.49

Mabuchi

Investigation of Carrot Reduction Effect on 4H- Silicon Carbide Epitaxial Wafers with Optimized Buffer Layer

M. Mabuchi, T. Masuda, D. Muto, K. Momose, H. Osawa


TuP.50

Miyasaka

Improvement of Quality of Thick 4H-SiC Epilayers

A. Miyasaka1,2, K. Kojima1, K. Momose2, H. Osawa2, H. Okumura1 1National Institute of Advanced Industrial Science and Technology, Central 2 1-1-1 Umezono, Tsukuba, Ibaraki, Japan 2SHOWA DENKO K. K., 1505 Shimokagemori, Chichibu, Saitama 369-1893, Japan

TuP.51

Chassagne

Influence of Growth Temperature on Site Competition Effects During Chemical Vapor Deposition of 4H-SiC

Layers

M. Zielinski1, T. Chassagne1, R. Arvinte1, A. Michon2, M. Portail2, S. Contreras3, S. Juillaguet3, H. Peyre3 1NOVASiC; Savoie Technolac; 73375 Le Bourget du Lac cedex; France 2CRHEA-CNRS UPR10; rue Bernard Gregory; 06560 Valbonne; France 3CNRS, Lab. Charles Coulomb UMR 5221; 34095 Montpellier cedex 5; France

TuP.52

Myers-Ward

Conversion of BPDs in 4H-SiC Epilayers grown on 2° Offcut Substrates

R.L. Myers-Ward, N.A. Mahadik, R.E. Stahlbush, P.B. Klein, K.M. Daniels, A.K. Boyd, C.R. Eddy, Jr. and D.K. Gaskill

U.S. Naval Research Laboratory, 4555 Overlook Avenue, SW, Washington, DC 20375, U.S.A.

TuP.53

Anzalone

Hydrogen etching influence on 4H-SiC homo-epitaxial layer for high power device

R. Anzalone, M. Salanitri, S. Lorenti and S. Coffa

STMicroelectronics, Stradale Primosole 50, 95121, Catania, Italy

TuP.54

Yuan

The quality deterioration of 3C-SiC layer grown on C face 4H-SiC

Bin Xin, Yu-ming Zhang, Ren-xu Jia, Hao Yuan

School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,

Xi’an 710071, China

TuP.55

Sejil

Very High Sustainable Forward Current Densities on 4H-SiC P+N- Junctions formed by localized VLS P+ epitaxy

S. Sejil1,2, L. Lalouat1,2, M. Lazar2, D. Carole1, C. Brylinski1, F. Jomard3, D. Planson2, G. Ferro1, C. Raynaud2, 1Laboratoire des Multimateriaux et Interfaces, UMR 5615, Universite de Lyon, LYON 1, CNRS, 69622 Villeurbanne,

France 2AMPERE, INSA Lyon, Ecole Centrale de Lyon, CNRS, 69621 Villeurbanne, France 3GEMAC, Universite Versailles-Saint-Quentin, CNRS, 78035 Versailles, France

TuP.56

Yeghoyan

Silicon deposition on 3C-SiC seeds of different orientations

T. Yeghoyan1, K. Alassaad1, V. Souliere1, G. Ferro1 1Universite Claude Bernard Lyon 1, CNRS, UMR 5615, Laboratoire des Multimateriaux et Interfaces, 43 Bd du 11 Nov.

1918, 69622 Villeurbanne - France

LN.10

Zhao

Impact Ionization Coefficients in 4H-SiCat High Temperatures

Y. Zhao1, H. Niwa1,J. Suda1, T. Kimoto1 1Department of Electronic Science and Engineering, Kyoto University, Japan



LN.12

Okamura

Novel 3.3 kV SiC-MOSFET for Accelerator Application

K. Okamura 1, 2, K. Takayama 1, 2 1 High Energy Accelerator Research Organization, 1-1 Oho, Tsukuba, Ibaraki, 305-0801 Japan 2 Graduate University for Advanced Studies, Hayama, Kanagawa, 240-0193, Japan

LN.11

Rabkowski

SiC power devices in impedance source converters

J. Rabkowski

Warsaw University of Technology, Poland

LN.13

Sankin

New efficient canal of THz emission from SiC natural superlattices in conditions of Wannier-Stark localization

V.I. Sankin 1, A.V. Andrianov 1, A.G. Petrov 1, S.S.Nagalyuk 1, P.P. Shkrebiy 1, A.O. Zachar’in 1 1Ioffe Institute, 26 Politekhnicheskaya, St. Petersburg, 194021, Russia

LN.14

Chokawa

Oxidation Effect for the Carbon Related Defect Formation in SiC/SiO2 interfaces by First Principles Calculation

K. Chokawa1, K. Shiraishi2 1Graduate School of Engineering Nagoya University, Nagoya 464-8603, Japan 2Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8603, Japan

LN.15

Sakai

In-situ observation during solution growth of SiC by X-ray transmission method

Takenobu Sakai 1, Motohisa Kado 2, Hironori Daikoku 2, Shunta Harada 3 and Toru Ujihara 3 1 Institute of Innovation for Future Society, Nagoya University, Fur-cho, Chikusa-ku, Nagoya, 464-8603, Japan 2Toyota Motor Corporation, 1200 Mishuku, Susono, Shizuoka 410-1193, Japan 3Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability

(IMaSS), Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8603, Japan

LN.16

Dai

Growth of High Purity 4H-SiC Grown without Blue Belt in the Middle Part by PVT Method

Rusheng Wei , Yingmin Wang, Lizhong Wang, Fen Fu, Xin Dai, Kangfu Ma, Bin L

The Second Institute of China Electronics Technology Group Corporation,China

LN.17

S Kim

Numerical Study on the Growth Rate of SiC Single Crystals in a High Temperature Chemical Vapor Deposition

System

Seongkyung Kim, Sungin Suh, and Hyeong Joon Kim

Department of Materials Science and Engineering, Seoul National University, Republic of Korea

LN.18

Daikoku Effect of Al addition to Si-Cr solvent for n-type 2 inch 4H-SiC by solution growth on concave surface method

H. Daikoku1, M. Kado1, H. Saito1, T. Bessho1 ,S. Kawanishi2,3, T.Yosikawa2 1 Higashifuji Technical Center, Toyota Motor Corporation 1200, Mishuku, Susono, Shizuoka 410-1193, Japan 2 Institute of Industrial Science, The University of Tokyo 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan 3 Currently; Institute of Multidisciplinary Research for Advanced Materials, Tohoku University 2-1-1, Katahira, Aoba-ku,

Sendai, Miyagi 980-8577, Japan



Wednesday, 26 Sept. 16:00 - 18:00 WeP Poster Session

WeP.01 - WeP.15 Characterisation

WeP.16 - WeP.32 LN.22 - LN.24 Devices and Circuits

WeP.33 - WeP.46 LN.20 - LN.21 Processing

WeP.47 - WeP.57 LN.25 - LN.26 Related Materials

WeP.01

Peng

Defect induced magnetism in nitrogen implanted 4H-SiC single crystal

B. Peng1, R.X. Jia1, Y.T. Wang1 and Y.M. Zhang1 1 School of Microelectronics, Xidian University, Xi’an, China

WeP.02

Khosa

Low density of near-interface traps at the Al2O3/4H-SiC interface with Al2O3 made by low temperature oxidation of

Al

R.Y. Khosa1, E.O. Sveinbjӧrnsson1,2, M. Winters3, J. Hassan2,d and N.Rorsman3 1 Science Institute, University of Iceland, IS-107 Reykjavik, Iceland 2Department of Physics, Chemistry and Biology (IFM), Semiconductor Materials Division, Linkoping University, SE-58183

Linkoping, Sweden 3Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Goteborg, Sweden

WeP.03

Savtchouk

Non-contact Photo-assisted Charge-based Characterization of Dielectric Interfaces in SiC: Evidence of Slow

States

A. Savtchouk, M. Wilson, J. Lagowski

10770 N. 46th St., Ste. E700, Tampa, FL 33617 USA

WeP.04

Chow

Carrier Lifetime Enhancement in Free-standing, Lightly Doped, N-type 4H-SiC Substrates

S. Chowdhury, C. W. Hitchcock, R. P. Dahal, I. B. Bhat and T. P. Chow

Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A

WeP.05

Leonard

Exploration of Bulk and Epitaxy Defects in 4H SiC Using Large Scale Optical Characterization

R.T. Leonard1, M.J. Paisley1, J.J. Sumakeris1, A.R. Powell1 Y. Khlebnikov1, J.C. Seaman1, E.L. Hutchins1, A.A. Burk1,

M.J. O’Loughlin1, E. Balkas1 1Cree, Inc. 4600 Silicon Dr. Durham, NC 27703, USA

WeP.06

Litrico

Crystallographic defects detection in 3C-SiC by micro-Raman analysis

G. Litrico1,3, N. Piluso2, F. La Via3 1Laboratori Nazionali del Sud, via S. Sofia, 62, 95123 Catania, Italy 2STMicroelectronics, Stradale Primosole, 50, 95121 Catania, Italy 3IMM-CNR, VIII Strada, 5, 95121 Catania, Italy

WeP.07

Argunova

Thermal and lattice misfit stress relaxation in growing AlN crystal with simultaneous evaporation of SiC

substrate

T.S. Argunova1, M.Yu. Gutkin2-4, K.D. Shcherbachev5, S.S. Nagalyuk1, O.P. Kazarova1, E.N. Mokhov1, J.H. Je6 1 Ioffe Physical-Technical Institute RAS, St. Petersburg, Russia 2 Institute of Problems of Mechanical Engineering RAS, St. Petersburg, Russia 3 Peter the Great St. Petersburg Polytechnic University, St. Petersburg, Russia 4 ITMO University, St. Petersburg, Russia 5 National University of Science and Technology MISiS, Moscow, Russia 6 Pohang University of Science and Technology, Pohang, Republic of Korea

WeP.08

Sato

Three Dimensional Dislocation Analysis of Threading Mixed Dislocation using Multi Directional Scanning

Transmission Electron Microscopy

T. Sato1, Y. Suzuki1, H. Ito1, T. Isshiki2, K. Nakamura1 1Hitachi High-Technologies Corporation, 1040, Ichige, Hitachinaka, Ibaraki, 312-8504, JAPAN 2Kyoto Institute of Technology, 1, Matsugasaki-hashikamicyo, Sakyo-ku, Kyoto, 606-8585, JAPAN

WeP.09

Tang

Crystallographic defects detection in 3C-SiC by micro-Raman analysis

G. Litrico1,3, N. Piluso2, F. La Via3 1Laboratori Nazionali del Sud, via S. Sofia, 62, 95123 Catania, Italy 2STMicroelectronics, Stradale Primosole, 50, 95121 Catania, Italy 3IMM-CNR, VIII Strada, 5, 95121 Catania, Italy



WeP.10

Kang

Minority Carrier Traps in n-type 4H-SiC Measured by Schottky Diode-based Deep Level Transient Spectroscopy

Hong-Jeon Kang1, Suhyeong Lee1, Hyunwoo Kim1, Sungmin Kim1, Seongkyung Kim, Wook Bahng2, Jeong Hyun Moon2,

Dohyun Lee3, Hyeong Joon Kim1 1Department of Material Science and Engineering, College of Engineering, Seoul National University, Seoul, Korea 2Center for Energy Efficient Semiconductors, Korea Electrotechnology Research Institute, Changwon, Gyungnam, Korea 3Samsung electronics, 1, samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 445-701, Korea

WeP.11

Bonyadi

An investigation into the impact of surface passivation techniques using metal-semiconductor interfaces

Y. Bonyadi1, P.M. Gammon1, Y.K. Sharma2, P.A. Mawby1 1School of Engineering, University of Warwick, Coventry, CV4 7AL, UK 2Dynex Semiconductor Ltd, Lincoln, United Kingdom

WeP.12

Contreras

Comparative study of p-type 4H-SiC grown on n-type and semi insulating 4H-SiC substrates

S. Contreras1, L. Konczewicz1, R. Arvinte2, H. Peyre1, T. Chassagne2, M. Zielinski2, S. Juillaguet1 1Laboratoire Charles Coulomb (L2C), UMR 5221 CNRS-Universite de Montpellier, France. 2NOVASiC, Savoie Technolac, 73375 Le Bourget du Lac cedex, France

WeP.13

Yao

Dislocation revelation and categorization for thick free-standing GaN substrates grown by HVPE

Y. Yao1, Y. Ishikawa1,2, Y. Sugawara1, D. Yokoe1, M. Sudo2, N. Okada3, K.Tadatomo3 1 Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta, Nagoya 456-8587, Japan 2 Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan 3 Yamaguchi Univ., 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan

WeP.14

Cho

Universal parameter evaluating SiO2/SiC interface quality based on scanning nonlinear dielectric microscopy

N. Chinone1, A. Nayak1, R. Kosugi2, Y. Tanaka2, S. Harada2, Y. Kiuchi2, H. Okumura2, Y. Cho1, 1 Research Institute of Electrical Communication, Tohoku University 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577, Japan 2 National Institute of Advanced Industrial Science and Technology 1-1-1 Umezono, Tsukuba, Japan

WeP.15

Yuan

Investigation on carbon vacancy and minority carrier lifetime in silicon carbide combining ESR and μ-PCD

techniques

L. Yuan1, Q.W. Song2, X.Y. Tang1, Z.J. Li1, S.C. Liu1, Y.M. Zhang1, Y.M. Zhang1 1 Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xidian University, Xi’an, China. 2 School of Advanced materials and nanotechnology, Xidian University, Xi’an, China

WeP.16

Yang

4H-SiC Trench Junction Barrier Schottky Diodes with High-k Dielectrics

S. Yang1, Q. W. Song2, X. Y. Tang1, Y. M. Zhang1, Y. M. Zhang1, Y. M. Zhang1, H. Yuan1, Q. J. Sun1 1Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xidian University, Xi’an, China 2School of Advanced materials and nanotechnology, Xidian University, Xi’an, China

WeP.17

Niethammer

Vector magnetic field sensing using defect spins in 4H-SiC

M. Niethammer1, M. Widmann1, S.-Y. Lee1, P. Neumann1, P. Stenberg2, H. Pedersen2, O. Kordina2, T. Ohshima3, N. T.

Son2, E. Janzen2, J. Wrachtrup1 13rd Institute of Physics, University of Stuttgart, Pfaffenwaldring 57, 70569 Stuttgart, Germany 2Department of Physics, Chemistry and Biology, Linkoping University SE-58183, Linkoping, Sweden 3National Institute for Quantum and Radiological Science and Technology, Takasaki, Gunma, Japan

WeP.18

Widmann

Charge State Switching of Single Silicon Vacancies in SiC

M. Widmann1, M. Niethammer1, S.-Y. Lee1, I. Booker2, T. Ohshima3, Adam Gali4,5,N. T. Son2, E. Janzen2, J. Wrachtrup1, 13rd Institute of Physics, University of Stuttgart, Pfaffenwaldring 57, 70569 Stuttgart, Germany 2Department of Physics, Chemistry and Biology, Linkoping University SE-58183, Linkoping, Sweden 3National Institute for Quantum and Radiological Science and Technology, Takasaki, Gunma, Japan 4Wigner Research Centre for Physics, Hungarian Academy of Sciences, Budapest, Hungary 5Department of Atomic Physics, Budapest University of Technology and Economics, Budapest, Hungary

WeP.19

Russell

Functional Oxide as an Extreme High-k Dielectric Towards 4H-SiC MOSFET Incorporation

S. A. O. Russell 1, M. R. Jennings 1 , T. Dai 1, F. Li 1, D. P. Hamilton 1, C. A. Fisher 1, Y. K. Sharma 2, P. A. Mawby 1, M.

Lira-Cantu3, G. Catalan3, A. Perez-Tomas 3 1 School of Engineering, University of Warwick, Coventry, CV4 7AL, UK. 2 Dynex Semiconductor Ltd, Doddington Road, Lincoln, LN6 3LF, UK. 3 Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and the Barcelona Institute of Science and

Technology, Campus UAB, Bellaterra, 08193 Barcelona, Spain

WeP.20

Saitoh

Switching performance of V-groove trench gate SiC MOSFETs with grounding buried p+ regions

Y. Saitoh1, T. Masuda1, H. Tamaso1, H. Notsu1, H. Michikoshi1, K. Hiratsuka1 S. Harada1 and Y. Mikamura2 1National Institute of Advanced Industrial Science and Technology (AIST), Ibaraki 305-8569, Japan 2Sumitomo Electric Industries, Ltd., Osaka 554-0024, Japan



WeP.22

Cochrane

Three-axis silicon carbide magnetoresistive based magnetometer

C. J. Cochrane1, M.A. Anders2, P. M. Lenahan2, G. Hernandez3 1JPL/Caltech, Pasadena, CA 91109, USA 2Penn State University, University Park, PA 16802, USA 3University of California Riverside, Riverside, CA 92521, USA

WeP.23

Suvanam

Total Dose Effects on 4H-SiC Bipolar Junction Transistor

S. S. Suvanam1, L. Lanni 1, B. G. Malm1, C-M. Zetterling1, A. Hallen1 1KTH, Royal Institute of Technology, 16440 Kista, Sweden

WeP.24

Sato

Switching Analysis for a Full SiC Module

Shinji Sato1,2 Hidekazu Tanisawa1,2 Kenichi Koui1,3 Hiroki Takahashi1,4 Yoshinori Murakami1,5 Fumiki Kato1 Kinuyo

Watanabe1 Hiroshi Sato1 1National Institute of Advanced Industrial Science and Technology, 2Sanken Electric Co., Ltd. 3Calsonic Kansei Corporation 4FUJI ELECTRIC CO., LTD. 5NISSAN MOTOR CO.,LTD.

WeP.25

Lebedev

Degradation of 600-V 4H-SiC Schottky diodes under irradiation with 0.9 MeV electrons

A.A. Lebedev1, K.S. Davydovskaya1, V.V. Kozlovski2, O.M. Korolkov3, N.Sleptsuk 3, J.Toompuu 3, 1 Ioffe Institute, Politekhnicheskaya 26, St. Petersburg, 194021 Russia 2St. Petersburg State Polytechnic University, St. Petersburg, 195251 Russia 3Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn, Estonia

WeP.26

Rascuna

Optimization of edge termination structure for SiC JBS Diode

S. Rascuna1, M. Saggio1, E. Collard2, S. Ngo2 1 STMicroelectronics, Stradale Primosole 50, 95121 Catania (Italy) 2 STMicroelectronics, Rue Thales De Milet 10, CS 97155 Tours (France)

WeP.27

Kuroki

4H-SiC Pseudo-CMOS Logic Inverters for Harsh Environment Electronics

S.-I. Kuroki1, H. Nagatsuma1, T. Kurose1, S. Ishikawa1,2, T. Maeda1,2, H. Sezaki1,2, T. Kikkawa1, T. Makino3, T.

Ohshima3, M. Ostling4, and C.-M. Zetterling4 1Research Institute for Nanodevice and Bio Systems, Hiroshima University 1-4-2 Kagamiyama, Higashi-Hiroshima, 739-

8527, Japan 2Phenitec Semiconductor Co.,Ltd, Ibara, 715-8602, Japan 3National Institutes for Quantum and Radiological Science and Technology (QST), Japan 4KTH Royal Institute of Technology, Kista SE-16440, Sweden

WeP.28

Lee

Improved Sensitivity of 4H-SiC JFET based Biosensor Applications by Channel Modulation

Taeseop Lee1, Anders Hallen2, Carl-Mikael Zetterling2, Eun-Sik Jung3, Chang-Heon Yang3, Ye-Hwan Kang3,Sang-Mo

Koo1 1Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701, Korea 2KTH, Royal Institute of Technology, School of ICT, Kista-Stockholm SE-164 40, Sweden 3Maple Semiconductor, Incorporated, Bucheon 421-150, Korea

WeP.29

Jung

SiC nanoparticles- incorporated ZTO/SiC heterojunction diodes

Se-Woong Jung1, and Sang-Mo Koo1 1Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701, Korea

WeP.30

Kim

Improvement of breakdown characteristics of 4H-SiC schottky diodes using Al annealed Metal Rings (AMR)

Ki-Hwan Kim1, Jun-bo Park2, Taeseop Lee1, Jung Se-Woong1, Sang-Choon Ko2 and Sang-Mo Koo1 1Dept. of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, Korea 2Dept. of GaN Power Electronics Devices R&D section, Electronics and Telecommunication Research Institute (ETRI),

Daejeon 34129, Korea

WeP.31

Sampayan

16 kV, 75 kHz, 50% Duty Cycle, SiC Photonic Based Bulk Conduction Power Switch Development

S. E. Sampayan1 1Opcondys Incorporated, P.O. Box 901, Manteca, CA 95336, U.S.A.

WeP.32

Idris

Silicon carbide radiation detectors for medical applications

N. S. Mohamed1 2, M. I. Idris1, N. G. Wright1, A. B. Horsfall1 1School of Electrical and Electronic Engineering, Newcastle University, Newcastle Upon Tyne, UK 2Faculty of Health Sciences, Universiti Sultan Zainal Abidin, Terengganu, Malaysia

WeP.33

Yang

Charactrerization of Contact Resistance with Nickel-Vanadium alloy and 4H-SiC

C. H. Yang1, M. Na2, J. H. Lee1, S. B. Yun1, E. S. Jung1, I. H. Kang2, W. Bahng2, N. K. Kim2 1 SiC R&D Center, Maple Semiconductor Inc., Gyeonggi-do, Republic of Korea 2 Power Semiconductor Research Center, Korea Electrotechnology Research Institute(KERI), Republic of Korea



WeP.34

Moon

Effects of implantation temperature on electrical properties of heavily doped Nitrogen in p-well region of 4H-SiC

Jeong Hyun Moon, Su Jin Kim, Hyoung Woo Kim, Ogyun Seok, Wook Bahng, Nam-Kyun Kim

Power Semiconductor Research Center, Korea Electrotechnology Research Institute, Changwon, Republic of Korea

WeP.35

Roccaforte

Electrical properties of 4H-SiC MOS capacitors with SiO2 deposited from a high-temperature process

M. Vivona1, P. Fiorenza1, F. Iucolano2, A. Severino2, S. Lorenti2, F. Roccaforte1 1Consiglio Nazionale delle Ricerche - Istituto per la Microelettronica e Microsistemi (CNR-IMM), Catania, Italy 2STMicroelectronics, Stradale Primosole 50, 95121 Catania, Italy

WeP.36

Woerle

Analysis of thin thermal oxides on (0001) SiC epitaxial layers

Judith Woerle1,2, Massimo Camarda1, Christof W. Schneider1, Hans Sigg1, Ulrike Grossner2, Jens Gobrecht1 1Paul Scherrer Institut, 5232 Villigen, Switzerland 2Advanced Power Semiconductor Laboratory, ETH Zurich, Physikstrasse 3, 8092 Zurich, Switzerland

WeP.37

Muraoka

Enhanced-oxidation and interface modification on 4H-SiC(0001) substrate using alkaline earth metal

K. Muraoka1, H. Sezaki1,2, S. Ishikawa1,2, T. Maeda1,2, T. Sato1, T. Kikkawa1 and S-I. Kuroki1 1 Research Institute for Nanodevice and Bio Systems, Hiroshima University, Japan 2 Phenitec Semiconductor Corp., 150, Kinoko-cho, Ibara, Okayama, 715-8602, Japan

WeP.38

Camarda

Analysis of 4H-SiC MOS capacitors on Macro-Stepped Surfaces

Massimo Camarda1, Judith Woerle1,3, Veronique Souliere2, Gabriel Ferro2, Hans Sigg1, Ulrike Grossner3, Jens Gobrecht1 1Paul Scherrer Institute CH-5232 Villigen, Switzerland 2Laboratoire des Multimateriaux et Interfaces, Universite de Lyon, 43 Bd du 11 nov. 1918, 69622, Villeurbanne, France 3Advanced Power Semiconductor Laboratory, ETH Zurich, Physikstrasse 3, 8092 Zurich, Switzerland

WeP.39

De Silva

Low resistance Ti-Si-C ohmic contacts for 4H-SiC power devices using Laser annealing

Milantha De Silva1, Teruhisa Kawasaki2, Takamaro Kikkawa1, and Shin-Ichiro Kuroki1 1Research Institute for Nanodevices and Bio Systems, Hiroshima University, Japan 2Sumitomo Heavy Industries, Ltd, 19, Natsushima-cho, Yokosuka-shi, Kanagawa, 237-8555, Japan

WeP.40

Liu

Electrical Property Study of Ni/Nb contact to n-type 4H-SiC

Xue-Chao Liu1, Hua-Jie Wang1, Ren-Wei Zhou1, Hai-Kuan Kong1, Pan Gao1, Er-Wei Shi1 1Shanghai Institute of Ceramics, Chinese Academy of Sciences, People’s Republic of China

WeP.41

Peng

Reinvestigation of SiC/SiO2 interface passivation by nitrogen annealing

Zhao-Yang Peng1, Yi-Yu Wang2, Hua-Jun Shen1, Yun Bai1, Yi-Dan Tang1, Xi-Ming Chen2, Cheng-Zhan Li2, Ke-An Liu2,

Xin-Yu Liu1 1Microwave Device and IC Department, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China 2 Zhuzhou CRRC Times Electric Co., Ltd, ZhuZhou, China

WeP.42

Torimi

Improving mechanical strength and surface uniformity to prepare high quality thinned 4H-SiC epitaxial wafer

using Si-vapor etching technology

S. Torimi1, K. Ashida2, N. Yabuki1, M. Shinohara1, T. Sakaguchi1, Y. Teramoto1, S. Nogami1, M. Kitabatake1, T. Kaneko2 1 Toyo Tanso Corp., 2181-2 Nakahime, Ohnohara, Kanonji, Kagawa 769-1612, Japan 2 Kwansei Gakuin University, R&D Center for SiC Materials and Processes, 2-1 Gakuen, Sanda, Hyogo 669-1337, Japan

WeP.43

Kyoung

Investigation of Layout and Optical Proximity Correction Effects to Control Trench Etching Process on 4H-SiC

Sinsu Kyoung 1,2, Eun-Sik Jung 3,Tai-young Kang 2, and Man Young Sung 1 1Dept. of Electrical Engineering, Korea University Anam-Dong, Seongbuk-Gu, Seoul, Republic of Korea 2Powercubesemi, Inc. R&D Center, Samjeong-Dong, Ojeong-Gu, Bucheon-City, Gyeonggi-Do, Republic of Korea. 3Maplesemiconductor, Inc. R&D Center, Samjeong-Dong, Ojeong-Gu, Bucheon-City, Gyeonggi-Do, Republic of Korea

WeP.44

Dai

4H-SiC Trench devices fabrication with Al2O3 etching mask

T. Dai 1, Z. Mohammadi 1, S. A. O. Russell 1, C. A. Fisher 1, M. R. Jennings 1, and P. A. Mawby 1 1School of Engineering, University of Warwick, Coventry, CV4 7AL, UK

WeP.45

Toh

Study on the catalytic activities of transition metals in the catalyst-referred etching of SiC

D. Toh1, A. Isohashi1, P. V. Bui1, T. Inada1,Y. Nakahira1, Y. Sano1, S. Matsuyama1,K. Yamauchi1 1Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka,

Suita, Osaka, Japan

WeP.46

Zheng

Channel transport of Boro-silicate glass (BSG) gated 4H-SiC MOSFETs with Antimony surface doping

Yongju Zheng1, T. Isaacs-Smith1, A. C. Ahyi1, and S. Dhar1 1Dept. of Physics, Auburn University, Auburn, AL, USA 36849



WeP.47

Makarov

Investigation of Direct Water Photoelectrolysis Process Using III-N Structures

A. Usikov1,2, A. Nikiforov3, O. Khait4, O. Medvedev5, I. Ermakov2, B. Papchenko2, M. Puzyk2,6, A. Antipov7, I. Barash7, S.

Kurin7, A. Roenkov7, H. Helava1, Yu. Makarov1,7 1 Nitride Crystals Inc., 181 E Industry Court, Suite B, Deer Park, NY 11729, USA 2 University ITMO, Kronverkskiy pr. 49, St. Petersburg 197101, Russia 3 Boston University, Photonics Center, 8 St. Mary’s St., Boston, MA 02215, USA 4 Multitech Ltd., Rizhsky pr. 26, St. Petersburg 190103, Russia 5 St. Petersburg State University, Universitetskaya nab. 7-9, St. Petersburg 199034, Russia 6 Herzen University, Nab. r. Moyki 48, St. Petersburg 194186, Russia 7 Nitride Crystals Group Ltd., pr. Engel’sa 27, St. Petersburg 194156, Russia

WeP.48

Makarov

Bio-sensors based of graphene, produced by thermal destruction of SiC substrates

A. A. Lebedev1,2, S. P. Lebedev1,2, S. N. Novikov3, Yu. Makarov4,5, V. B. Klimovich6 1 Ioffe Institute, Politekhnicheskaya 26, 194021, St. Petersburg 2 ITMO University, Kronverkskii 49, 197101, St. Petersburg 3 Aalto University, Tietotie 3, 02150, Espoo, Finland 4 Nitride Crystals Corp. group, Engel’sa 27, 194156, St. Petersburg 5 Nitride Crystals Inc., 181 E Industry Court, Suite B, Deer Park, NY 11729, USA 6 Russian Research Center for Radiology and Surgical Technologies, St. Petersburg

WeP.49

Kozu

DUV irradiation damage of Tetrahedral Amorphous Carbon (ta-C) in Argon and air atmosphere

T. Kozu1, M. Yamaguchi1, M. Kawaguchi2 1Akita university, 1-1 Tegatagakuen-machi, Akita city, 010-8502, Japan 2Tokyo Metropolitan Industrial Technology Research Institute, 2-4-10 Aomi, Koto-ku, Tokyo, Japan

WeP.50

Pezoldt

Corona Assisted Ga based Nanowire Growth on 3C-SiC(111)/Si(111) pseudosubstrates

J. Reiprich1, Th. Stauden1, T. Berthold2, M. Himmerlich2, J. Pezoldt1, H.O. Jacobs1 1FG Nanotechnologie, Institut fur Mikro- und Nanoelektronik und Institut fur Mikro- und Nanotechnologien MacroNano,

TU Ilmenau, Postfach 100565, 98684 Ilmenau, Germany 2FG Technische Physik I, Institut fur Physik und Institut fur Mikro- und Nanotechnologien MacroNano, TU Ilmenau,

Postfach 100565, 98684 Ilmenau, Germany

WeP.51

Ramm

Simulation of β-Ga2O3 growth by HVPE

M.V. Bogdanov1, A.V. Kulik1, M.S. Ramm1 1STR Group, Inc. - Soft-Impact, Ltd., Engels av. 27, P.O. Box 89, 194156 St. Petersburg, Russia

WeP.52

Lazar

Realization and characterization of carbonic layers on 4H-SiC for electrochemical detections

J. Pezard1, V. Souliere2, M. Lazar1, N. Haddour1, F. Buret1, C. Raynaud1, D. Planson1 1 AMPERE, INSA Lyon, Ecole Centrale de Lyon, 69621 Villeurbanne, France 2 Laboratoire des Multimateriaux et Interfaces, Universite Lyon 1, 69622 Villeurbanne, France

WeP.53

Narumi

Effect of N2 partial pressure on solution growth of AlN using Cr-Ni solvent

S. Kurosaka1, T. Narumi1, H. Sasaki1,2, S. Kawanishi1,3, T. Yoshikawa1, M. Maeda1 1Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo, Japan 2Currently, Department of Materials Science and Engineering, Ehime University 3Currently, Institute of Multidisciplinary Research for Advanced Materials, Tohoku University

WeP.54

Kajiwara

Formation of a new interlayer during graphene growth on SiC(0001) by chemical vapor deposition

T. Kajiwara1, A. Visikovskiy1, T. Iimori2, F. Komori2, S. Tanaka1 1 Department of Applied Quantum Physics and Nuclear Engineering, Kyushu University, Fukuoka, Japan 2 Institute of Solid State Physics, University of Tokyo, Kashiwa 277-8581, Japan

WeP.55

Tanimoto

High Temperature Reliability Assessment and Degradation Analysis for Diamond Semiconductor Devices

Satoshi Tanimoto1,3, Tatsuhiro Suzuki1, Sawa Araki1, Toshiharu Makino2, Hiromitsu Kato2, Masahiko Ogura2 and Satoshi

Yamasaki2 1PEAL-DAD, NISSAN ARC, Ltd., 1, Natsushima, Yokosuka 237-0061, Japan 2ADPERC, Central 2, AIST, 1-1-1, Umezono, Tsukuba 305-8568, Japan 3RCGI, Shibaura Institute of Technology, 3-7-5 Toyosu, Koto 135-8548, Japan

WeP.56

Bosi

Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD

M. Bosi 1, F. Boschi 1,2, T. Berzina 2, E. Buffagni 1, C. Ferrari 1, B. Pecz 3, I. Cora 3, G. Calestani 4, F. Mezzadri 4, R.

Fornari 1,2 1 CNR-IMEM Institute, Parco area delle Scienze 37/A, 43124 Parma Italy 2 Department of Physics and Earth Sciences, University of Parma, Parma, Italy 3 Institute for Technical Physics and Materials Science, Centre for Energy Research, Budapest, Hungary 4 Dipartimento di Chimica, Universita di Parma, Parco Area delle Scienze 17/A, Parma, Italy



WeP.57

J.-K. Lim

Thermo-mechanical Reliability of a Lead-free RF Power Amplifier with GaN-on-SiC HEMTs

J. Lang1, I. Belov2, J. Hellen3, J.-K. Lim4, B. Schodt5, T. Nilsson3, R. Poder5, M. Bakowski4, P. Leisner1 1SP Technical Research Institute of Sweden, Box 857, 501 15 Borås, Sweden 2Jonkoping University, School of Engineering, Box 1026, 551 11 Jonkoping, Sweden 3Saab AB, Solhusgatan 10, 412 76 Gothenburg, Sweden 4Acreo Swedish ICT, Box 1070, 164 25 Kista, Sweden 5SP Technical Research Institute of Sweden, A.C. Meyers V. 15, 2450 Copenhagen, Denmark

LN.20

Fedeli

Ni-Al-Ti ohmic contacts on Al implanted 4H-SiC

P. Fedeli1, M. Puzzanghera1,2, F. Moscatelli 1, R. A. Minamisawa 3, G. Alfieri 3, U. Grossner4, R. Nipoti 1 1CNR-IMM of Bologna, via Gobetti 101, I-4029 Bologna, Italy 2University of Parma, Department of Information Engineering (DII), Parco Area delle Scienze 181A, Parma, Italy 3ABB Corporate Research, Segelhofstrasse 1K, 5405 Baden-Dattwil, Switzerland 4ETH, Advanced Power Semiconductor Laboratory, Physikstrasse 3 - ETL, 8092 Zurich, Switzerland

LN.21

Yamasaki

Carbon Concentration and Carbon Oxides Desorption at Interfaces of 4H-SiC(0001)Si/SiO2 and (000-1)C/SiO2 in

Oxidation Processes

T. Yamasaki1,2, N. Tajima 1,2, T. Kaneko1,2, J. Nara 1,2, T. Schimizu 3, K. Kato4, T. Ohno1,2 1 National Institute for Materials Science, Tsukuba, Ibaraki, Japan 2 MARCEED, Tsukuba, Ibaraki, Japan 3 Toshiba R&D Center, Kawasaki, Kanagawa, Japan 4 IIS, Univ. Tokyo, Tokyo, Japan

LN.22

Matthus

Implementation of 4H-SiC pin-diodes as a nearly linear temperature sensor up to 800 K towards SiC multi-sensor

integration

C. D. Matthus 1, T. Erlbacher 2, B. Schofer 1, A. J. Bauer 2, and L. Frey 1, 2 1Friedrich-Alexander University of Erlangen-Nuremberg, Chair of Electron Devices, Erlangen, Germany 2Fraunhofer Institute for Electronic Systems and Device Technology (IISB), Schottkystr. 10, 91058 Erlangen, Germany

LN.23

Singh

4H-SiC bipolar SRAM cell for high-temperature applications

Hazem Elgabra 1, Amna Siddiqui 1, Shakti Singh 1 1Khalifa University of Science, Technology & Research P.O Box: 127788, Abu Dhabi, United Arab Emirates

LN.24

Kotamraju

Improved switching characteristics obtained by using high-K dielectric layers in 4H-SiC IGBT: Simulation

approach

Vidya Naidu 1, Siva Kotamraju 2 1International Institute of Information Technology, Hyderabad, India 2Indian Institute of Information Technology, SriCity, India

LN.25

Dojima

Kinetically controlled growth of uniform (6√3×6√3) R30º graphene precursor layer on 4H-SiC (0001)

D. Dojima 1, Y. Kutsuma 1, K. Ashida 1, T. Kaneko 1 1 Kwansei Gakuin University, School of Science and Technology, 2-1 Gakuen, Sanda, Hyogo, 669-1337, Japan

LN.26

Zhang

Prediction of High-Density and High-Mobility Two-Dimensional Electron Gas at AlxGa1-xN/4H-SiC Interface

Z. W. Shen 1, F. Zhang 1, Sima Dimitrijev 2, Jisheng Han 2, Lixin Tian 1, Z.X.Wen 1,Guoguo Yan 1, Wanshun Zhao 1, Lei

Wang 1, Xingfang Liu 1, Guosheng Sun 1, and Yiping Zeng 1 1Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing

100083, People’s Republic of China 2 Queensland Micro- and Nanotechnology Centre, Griffith University, Brisbane, QLD 4111, Australia


www.ecscrm2016.org Page 41 Author Index

The Author Index is generated for your convenience using the information provided in the online abstract submission system. It may not coinside with the actual list of authors in submitted abstracts.

A

Abrikosov I A We3.05; We3.02 Afanas’ev V V We2b.05 Afanasyev A V MoP.43 Agodi C LN.03 Aichinger T Tu3.02; MoP.27 Aiso T Mo2b.04 Akasaki I MoP.08 Akatsu Kan We2b.01 Alassaad K TuP.56 Albrecht M TuP.23 Alexandrov P MoP.48 Alfieri G TuP.04; Mo2a.06; LN.20; MoP.46 Allen S Mo3.06; TuP.18; Tu1.02 Allerstam F MoP.37; MoP.30 Alquier D MoP.09 Aminbeidokhti A MoP.57 Amini M H MoP.57 Anders M A WeP.22 Anderson V R Mo2a.02 Antipov A WeP.47 Anzalone R TuP.53; We2a.03 Aomori F WeP.54 Araki S WeP.55; We2b.01 Argunova T S WeP.07 Ariyoshi K Tu3.03 Arjunan A C MoI.23 Arvinte R TuP.51; WeP.12 Asada S Mo3.01; Tu2a.04 Asano T Th1.02; MoP.18 Ashida K Mo2b.04; TuP.08; WeP.42; LN.25 Astakhov G V We3.01; MoP.25 Attolini G TuP.31 Auge Manuel MoP.32 Ayedh H M Tu2a.03; TuP.02; We3.06 Azarov A TuP.12

B

Badila M MoP.55 Badstübner U Mo2a.06 Bahng W TuP.16; TuP.26; WeP.33; WeP.10 Bai Yun MoP.47; WeP.41; WeP.09 Bakowski Mietek WeP.57; We2b.03; TuP.15 Baliga Jayant MoP.49; TuP.28 Balkas E WeP.05 Bandoh A TuP.46; MoP.07 Banerjee S TuP.19 Bange R MoP.54 Bano E MoP.54 Barash I WeP.47 Baron T MoP.54 Bartolf H MoP.46 Bartolf Holger MoP.24 Basler T Tu3.02 Batten Tim MoI.02 Bauer A J TuP.01; TuP.17; LN.22; TuP.23 Bauer A J MoP.45 Bauer Anton TuP.22 Bayerer R Mo1.02 Bayle M Mo2a.03 Beheim G M TuP.25 Belov I WeP.57 Belov Sergey V MoP.29 Ben Ali K We2b.04 Bendel J MoP.48 Ber Boris Ya MoP.29 Berenguier B MoP.21 Bergman J P We3.06; TuP.48 Bergner W Tu3.02 Bertaina S MoP.21 Berthold T WeP.50 Berthou M Tu3.04 Berwian Patrick MoP.33 Berzina T WeP.56 Bessho T LN.18

Bhalla A MoP.48 Bhat I B WeP.04; Tu1.03; We1.04 Bianda E MoP.46; Tu3.04 Biscarrat J MoP.09 Bogdanov M V WeP.51; TuP.34 Bonyadi Y WeP.11 Booker I D Tu2a.01 Booker Ian WeP.18 Boschi F WeP.56 Bosi M MoP.04; WeP.56; TuP.31; MoP.54 Boyd A K TuP.52; Mo2a.02 Brezeanu G MoP.55 Brow R We2a.05 Brylinsky C TuP.55 Bu Yuan Tu1.06 Buettner J TuP.17 Buffagni E WeP.56; TuP.31 Bui P V WeP.45 Burenkov Alex We2b.06 Buret F WeP.52 Burk A Tu1.02; WeP.05 Burnside P MoI.22 Butler P TuP.18 Byeon D -S TuP.38

C

Cabello M Th1.04; Tu3.04 Calcagno L LN.03 Calestani G WeP.56 Camarda M WeP.38; WeP.36; MoP.24 Camuso G We2b.04 Cantin J L We3.04 Capell C TuP.18; Tu1.02 Capuzzello F LN.03 Carbone D LN.03 Carole Davy TuP.55 Carvalho P TuP.12 Casady J TuP.18; Tu1.02 Castelletto S We3.01 Catalan G WeP.19 Cavallaro M LN.03 Chan C W We2b.04 Chan C W MoP.50 Chan H K TuP.03 Chan L S LN.02 Chang C W TuP.25 Chanthaphan A Th1.03 Chassagne T TuP.51; WeP.12; Mo2a.03 Chatty K TuP.19 Chen Hung-Wen MoP.05 Chen L TuP.25 Chen T L MoP.22 Chen Xi-Ming WeP.41 Chen Xiufang TuP.43; TuP.42 Chen Z X MoP.06 Cheung R Th2.03 Chinone N Mo3.05; WeP.14 Cho Y Mo3.05; WeP.14 Choi Jung-Woo TuP.33 Choi Su-Hoon TuP.33 Chokawa K LN.14 Chow T P MoP.52; WeP.04; Tu1.03; We1.04 Chowdhury S MoP.52; Tu1.03; WeP.04;

We1.04 Choyke W J Tu2a.06 Chung G Mo2b.05; Tu2b.06 Clark D T MoI.22; TuP.03 Cleveland E R Mo2a.02 Cochrane C J WeP.22 Coffa S TuP.53; We2a.03 Collard E WeP.26; MoP.09 Colmenares J We2b.03 Contreras S WeP.12; TuP.51 Cora I WeP.56 Cordier Y Mo2a.03 Cristofolini L TuP.31 Cromar M We2a.05 Csore A MoP.02

D

Dagher R Mo2a.03 Dahal R P WeP.04; Tu1.03; We1.04

Dai T WeP.44; WeP.19 Dai X LN.16 Daikoku H TuP.41; LN.15; LN.18 Daniels K M TuP.52; Mo2a.02 Danielsson O We2a.06; TuP.47 Das H MoP.30 Davydovskaya K WeP.25 De Silva W M WeP.39 DeBiasio M We1.02 Devaty R P Tu2a.06 Di Benedetto L TuP.22 Di Stefano M A Th1.06 Dimitrijev S MoP.57; LN.26 Diplas S TuP.12 Dodge J MoP.48 Doering S We1.02 Doering Stefan TuP.14 Dojima D LN.25 Domeij M MoP.37; MoP.30 Draghici F MoP.55 Dudley M Tu2b.06; Mo2b.05 Duncan M MoI.22 Dutta Dipanwita MoP.24 Dyakonov V MoP.25; We3.01 Dycus J H Mo3.06

E

Ebihara K MoP.26 Eckardt B We2b.02 Eckstein Marco MoP.13; MoP.32 Eddy, Jr C R TuP.52 Elahipanah H TuP.15; Tu1.04 Elgabra H LN.23 Elliott Bart MoI.21 Elpelt Rudolf TuP.14 Enokizono T MoP.11 Erlbacher T LN.22; MoP.45; We2b.02;

TuP.23; TuP.17; TuP.22; We2b.06 Erlekampf J MoP.33 Ermakov I WeP.47 Eryu Osamu LN.06 Esteve R MoP.10; We1.02; Tu3.02 Eto K MoP.38 Eto Kazuma Tu2b.04

F

Fadil Ahmed Tu2a.05 Fan L We2b.04 Farkas I TuP.48; We2b.05 Fedeli P LN.20 Felici M MoP.21 Feng G MoP.06 Ferrari C MoP.04; WeP.56; TuP.31 Ferro G We2a.01; TuP.56; TuP.55 Fiorenza P Mo3.07; WeP.35 Fischer Ulrich TuP.21 Fisher C A WeP.44; WeP.19 Fisher C A We1.02 Flandre D We2b.04 Fornari R WeP.56 Franchi J MoP.37 Frangis N Mo2a.04 Freedman G Tu2a.06 Frey L LN.22; TuP.23 Friedrich Jochen MoP.33 Fujibayashi H LN.05 Fujimoto T Tu1.05; TuP.09; TuP.36; TuP.08 FUJITA R Tu3.05; MoP.36 Fujiwara H LN.09 Fukada K MoP.07; TuP.46; TuP.20 Fukunaga D TuP.09 Furumai M TuP.20

G

Galeckas A We3.06; TuP.12 Gali A MoP.02; We3.02; We3.05; WeP.18 Gammon P WeP.11; MoP.12; We2b.04;

TuP.10; MoP.50 Gao Pan WeP.40 Gardner J W We2b.04 Gaskill D K TuP.52; Mo2a.02 Gerstl Stephan MoP.24



Gerstmann Uwe We3.04 Gibson B C We3.01 Gity F We2b.04 Gkanatsiou A Mo2a.04 Glatzel Thilo MoP.24 Gobrecht J WeP.36 Godignon P Tu3.04; TuP.04 Goedecker S MoP.24 Goto K Mo2a.01 Goue O Y Mo2b.05 Grasser T MoP.27 Green R TuP.30; MoP.53 Grider D Tu1.02 Grivickas P Tu2a.01 Gromov V T MoP.20 Grossner U TuP.24; WeP.36; LN.20 Guillemin S MoP.10 Gumaelius K MoP.37 Guo Fei WeP.09 Guo J Tu2b.06; Mo2b.05 Guo L MoP.03 Gutkin M Yu WeP.07 Gysin Urs MoP.24

H Ha M T TuP.39 Haasmann D MoP.57 Habersat D B MoP.53 Habuka H MoP.14; TuP.45 Haddour N WeP.52 Haehnlein Bernd MoP.13; MoP.32 Haeublein V TuP.01 Hallen A WeP.28; Tu2a.03; WeP.23 Hamada K LN.09 Hamilton D P MoP.23; WeP.19; TuP.10 Han J MoP.57; LN.26 Hanafusa H MoP.15 Hara K LN.05 Harada S Tu2b.05; Tu3.03; Mo3.02;

Tu2b.03; Mo3.05; TuP.40; WeP.14; WeP.20; LN.15

Hartl M MoP.10 Hasegawa M MoP.31 Hashimoto S Mo2b.06 Hassan J Tu2a.01; TuP.48; WeP.02 Hatasa G Tu2b.05 Hatta Hideyuki Tu3.01 Hauck Martin Mo3.04 Hayashi Y Tu2b.01 Hayward Ian MoI.02 Hazdra P MoP.58 Hedayati R MoP.40 Heidorn C MoP.10 Helava H WeP.47 Hellen J WeP.57 Hellstrom P -E We2b.07 Hens P We2a.05 Hernandez G WeP.22 Higashi S MoP.15 Higashiwaki M Mo2a.01 Hijikata Y We3.01 Himmerlich M WeP.50 Hindmarsh S A MoP.23 Hino Shiro Tu3.01 Hiramatsu Kana MoP.16 Hirano K TuP.06 Hiratsuka K WeP.20 Hirose T TuP.05 Hitchcock C W MoP.52; Tu1.03; WeP.04;

We1.04 Hiyoshi Toru MoP.01 Hobart K D Mo2a.02 Honda T We3.01 Hori T Tu2b.03; TuP.40 Horsfall A B MoP.35; WeP.32; We1.06;

TuP.03 Hoshino Norihiro Mo2b.02 Hosoi T We1.01; Th1.03 Hostetler J TuP.11 Hou S We2b.07 Hovden S TuP.12 Hozumi Y TuP.20

Hsu C-W We2b.05 Hsu F J MoP.22 Hu Xiaobo TuP.42; TuP.43 Huang Alex Q TuP.28 Huang J MoP.06 Huang Y F MoP.22 Huerner A MoP.45; TuP.23 Hull B Mo3.06; Tu1.02; TuP.18 Hung C C MoP.22 Hung H T MoP.22 Huntley C MoI.22 Hutchins E L WeP.05

I Ibanez J U We1.06 Ichikawa N MoP.51 Ichikawa Y LN.07 Ichimura M LN.07; MoP.51 Idris M I TuP.03; WeP.32 Iijima Akifumi Mo2b.01 Iimori T WeP.54 Iizuka Shota We2b.01 Ikeda A MoP.18; Th1.02 Ikenoue H MoP.18 Ilyin V A MoP.43 Imaizumi M Tu3.01 Imamura T MoP.38 Inada T WeP.45 Ingebrigtsen ME Mo2a.06 Inoue K TuP.05 Ise Tatsuhiko Mo2b.06 Ishibashi N TuP.46; MoP.07 ISHIGAKI T Tu3.05 Ishikawa S WeP.27; WeP.37 Ishikawa Y TuP.06; WeP.13 Ishimaru R MoP.15 Isohashi A MoP.19; WeP.45 Issa Fatima TuP.21 Isshiki T MoP.31; WeP.08 Ito Hiroyuki WeP.08 Iucolano F WeP.35 Ivady V We3.02; We3.05 Ivanov I G We3.03 Ivanov P TuP.29 Iwahashi Y LN.09 Iwamatsu T Tu3.01 Iwamoto N Tu2a.03 Iwasa Y MoP.08 Iwaya M MoP.08; Tu3.03

J Jacobs H O WeP.50 Jang Yeon-Suk TuP.33 Janzen E We3.02; TuP.48; We3.03; Tu2a.01;

TuP.47; We2a.06; We2b.05; We3.05; WeP.17; WeP.18

Je J H WeP.07 Jennings M WeP.44; MoP.12; WeP.19 Jeong S -M TuP.39; TuP.38; TuP.33 Jernigan G G Mo2a.02 Ji S We2a.04; MoP.38 Jia R X WeP.01; TuP.54 Jiang Yifan TuP.28 Jo J Y TuP.16 Johnson B C We3.01 Jokubavicius V TuP.34; TuP.12 JOMARD F TuP.55 Jonas C TuP.18; Tu1.02 Jouault B Mo2a.03 Juillaguet S TuP.51; WeP.12 Jung E S WeP.28; WeP.33; TuP.07 Jung Eun-Sik MoP.42; WeP.43 Jung S W WeP.29; WeP.30 Jung Thomas MoP.24

K Kado M LN.18 Kajiwara T WeP.54 Kakarla B TuP.24 Kamata Isaho Mo2b.02 Kamata N MoP.34 Kamei K MoP.03 Kaminzky Daniel MoP.33

Kamiyama S MoP.08 Kaneko M Mo2a.05 Kaneko T LN.21; TuP.08; LN.25; Mo2b.04;

WeP.42 Kang Hong Jeon WeP.10; LN.04 Kang I H TuP.07; TuP.26; WeP.33; MoP.17 Kang Tai-young MoP.42; WeP.43 Kang Y H TuP.07; WeP.28; TuP.26 Kaplan Wlodek TuP.15 Karhu R TuP.47; Tu2a.01 Kato Fumiki WeP.24 Kato H WeP.55 Kato K LN.21 Kato M MoP.51; LN.07; We3.05 Kato T Tu2b.01; Tu2b.05; LN.09;

MoP.14; Tu1.05; MoP.38 Kato Tomohisa Tu2b.04; Mo2b.02; Mo2b.06 Katsu Y Th1.03 Katsuno M TuP.09; TuP.36; TuP.08 Kawaguchi M WeP.49 Kawahara K MoP.26 Kawanishi S TuP.37; WeP.53; LN.18 Kawasaki T WeP.39 Kayambak M MoP.41 Kazarova O P WeP.07; MoP.28 Khait O WeP.47 Khlebnikov Y WeP.05 Khosa R Y Mo3.03 Khosa R Y WeP.02 Kikkawa T WeP.39; WeP.27; WeP.37 Kilchytska V We2b.04 Kim C J TuP.39 Kim H J WeP.10; LN.04; LN.17 Kim H W TuP.16; TuP.26 Kim Hwang-Ju TuP.32; TuP.33 Kim Hyunwoo LN.04; WeP.10 Kim Jung-Gyu TuP.33 Kim K H TuP.07; WeP.30 Kim N K TuP.07; TuP.16; WeP.33; TuP.26 Kim S C TuP.26 Kim S K LN.17 Kim Seongkyung WeP.10 Kim Sungmin WeP.10 Kim Y H TuP.39 Kim Young Seok LN.04 Kim Young-Gon TuP.33 Kim Younghee TuP.33 Kimoto T Mo2a.05; Mo3.01; MoP.11;

LN.01; LN.07; Th1.05; Tu2a.04; LN.10; Tu2a.01; Tu1.05

Kimoto Tsunenobu Mo2b.01; MoP.16; Mo2b.02

Kimura H Tu3.03 Kinnear R MoI.22 Kinoshita A Tu3.03 Kitabatake M Mo2b.04; WeP.42 Kitai H TuP.20; Tu3.03 Kiuchi Y WeP.14 Klahold W Tu2a.06 Klein J R We3.01 Klein P B TuP.52 Klimovich V B WeP.48 Klix Axel TuP.21 Knoll L MoP.46 KOBAYASHI K Tu3.05 Kobayashi T Th1.05 Kobayashi Y Tu3.03 Kocher M TuP.01 Koehler A D Mo2a.02 Kohno H MoI.01 Kojima K TuP.50; We2a.04; MoP.38 Kojima Kazutoshi Tu2b.04; Mo2b.06 Kojima T Tu3.03 Komatsu N Tu2b.01 Konczewicz L WeP.12 Kondo K MoP.34 Kong B D Mo2a.02 Kong Hai-Kuan WeP.40 Konishi K Mo2a.01; Tu3.05; MoP.36; Tu1.06 Kono H MoP.39



Konstantinidis G We1.05; MoP.41 Konstantinov A MoP.30 Koo S M WeP.29; WeP.30; WeP.28 Kordina O We2a.06; TuP.47; WeP.17 Korolkov O TuP.27; WeP.25 Kosugi R Mo3.05; We2a.04; WeP.14 Kosugi Ryoji MoP.01 Kotamraju Siva LN.24 Koui Kenichi WeP.24 Kozlovski V V WeP.25; TuP.13; MoP.29 Kozu T WeP.49 Krach F We2b.02 Kraft M We1.02 Kraus H MoP.25; We3.01 Krieger Michael Mo2b.03; Mo3.04 Ku Kap-Ryeol TuP.33 Kub F J Mo2a.02 Kueck D Tu3.02; MoP.10 Kulik A V WeP.51; TuP.34 Kumagai Y Mo2a.01 Kuramata A Mo2a.01 Kurin S WeP.47 Kuroki S I WeP.39 Kuroki S -I WeP.37; WeP.27 Kurosaka S WeP.53 Kurose T WeP.27 Kutsuma Y LN.25 Kuznetsov A Mo2a.06; MoP.20 Kyogoku S Tu3.03 Kyoung Sinsu MoP.42; WeP.43 Kyun Myung-Ok TuP.33

L La Magna A Mo3.07 La Via F We2a.03; LN.03; Tu2b.02; WeP.06 Lagowski Jacek MoI.24; WeP.03 Lalouat Loic TuP.55 Land R TuP.27 Lang J WeP.57 Lanni L MoP.40; WeP.23 Lanois F MoP.09 Lanzalone G LN.03 Lazar Mihai TuP.55; WeP.52; TuP.21 Lebeau J M Mo3.06 Lebedev A A WeP.48; MoP.20; MoP.29;

WeP.25; TuP.13 Lebedev S P WeP.48 Lee C Y MoP.22 Lee Dohyun WeP.10 Lee Dong-Hoon TuP.33 Lee Hunhee LN.04 Lee J H WeP.33 Lee K MoP.37 Lee K Y LN.02 Lee L S MoP.22 Lee M -H TuP.33; TuP.39; TuP.38 Lee S -Y WeP.17; WeP.18 Lee Si-Hyun TuP.33 Lee Suhyeong WeP.10; LN.04 Lee T S WeP.28; WeP.30 Lee W -J TuP.38; TuP.39 Lee Won-Jae TuP.32; TuP.33 Legallais M MoP.54 Lehmann Joerg MoP.24 Leisner P WeP.57 Lelis A Tu1.02 Lelis A J TuP.30 Lelis A J MoP.53 Lemma Y Tu1.02 Lenahan P M WeP.22 Leonard R T WeP.05 Levinshtein M TuP.29 Li Cheng-Zhan MoP.47; WeP.41 Li F MoP.12; MoP.23; MoP.50;

WeP.19; TuP.10 Li K X MoP.06 Li L Th1.02 Li X MoP.48 Li Y Y MoP.06 Li Z MoP.48 Li Zhao Jun WeP.15 Liao Chen-Zi MoP.05

Licciardo G D TuP.22 Lichtenwalner D Tu1.02; TuP.18; Mo3.06 Lilja L TuP.48 Lim J -K WeP.57; WeP.57 Lim Jang-Kwon We2b.03; TuP.15 Lioutas Ch B Mo2a.04 Lira-Cantu M WeP.19 Litrico G LN.03; WeP.06; Tu2b.02; We2a.03 Litvin D TuP.44 Liu Ke-An WeP.41 Liu Si Cheng WeP.15 Liu Siyang TuP.28 Liu X F LN.26 Liu Xin-Yu MoP.47; WeP.09; WeP.41 Liu Xue-Chao WeP.40 Liu Y H LN.02 Lohrmann A We3.01 Lorenti S TuP.53; WeP.35; Th1.06 Lovvik O M TuP.12 Lu W MoP.08 Luchinin V V MoP.43 Lukco D TuP.25 Lv L P MoP.06 Lyoussi A MoP.21 Lyoussi A TuP.21

M Ma Q TuP.12 Mabuchi Y TuP.49 Maeda M WeP.53 Maeda T WeP.27; WeP.37 Magnusson B TuP.47 Mahakik N A TuP.52 Makarenko L F TuP.13 Makarov Yu TuP.44; WeP.48; WeP.47 Makino T We3.01; WeP.55; WeP.27 Malm B G WeP.23 Maning I Mo2b.05 Manning I Tu2b.06 Manning I C MoI.03 Marinski D MoI.24 Martin D MoP.12 Maruyama G Mo2b.06 Mastropaolo E Th2.03 Masuda T TuP.49; WeP.20; MoP.01 Matlok S We2b.02 Matocha K TuP.19 Matsui F TuP.05 Matsumoto N TuP.36 Matsunaga S Tu1.05 Matsuura H MoP.38 Matsuyama S WeP.45 Matthus C D LN.22; We2b.06 Mauceri M Tu2b.02 Mawby P TuP.10; WeP.19; We2b.04;

MoP.50; MoP.23; MoP.56; WeP.11; WeP.44; MoP.12

McCallum J C We3.01 Medvedev O WeP.47 Meyer Ernst MoP.24 Mezzadri F WeP.56 Michaud J F MoP.09 Michikoshi H WeP.20 Michon A TuP.51; Mo2a.03 Mihaila A MoP.46; TuP.04; We2b.05;

Mo2a.06; Tu3.04 Mikamura Y WeP.20 Milikofu Olga MoI.02 Millan J TuP.04 Minamisawa R We2b.05; MoP.46; LN.20 Mitani T Tu2b.01 Miyagawa Reina LN.06 Miyajima M LN.09; Tu1.05 Miyaki A MoP.31 Miyasaka A TuP.50 Miyasaka Y MoP.07 Miyazato M LN.09; Tu1.05 Miyazawa T Tu2a.02; We2a.02; Tu1.05;

Mo2b.02 Mochizuki K We2a.04 Moeggenborg K MoI.03 Mohamed N S WeP.32

Mohammadi Z WeP.44 Mokhov E N WeP.07; MoP.28; TuP.35 Momose K TuP.50; TuP.46; TuP.49; MoP.07 Monemar B Mo2a.01 Montserrat J Tu3.04 Moon J H WeP.34; TuP.07; TuP.16;

TuP.26; WeP.10 Mori D TuP.05 Mori Tetsuya We2b.01 MORI Y Tu3.05 Moscatelli F LN.20 Motohisa Kado LN.15 Mueller E MoP.24 Muoio A LN.03 Murakami H Mo2a.01 Murakami Y WeP.24 Muraoka K WeP.37 Murayama K Tu2b.03; Tu2b.05; TuP.40 Murphy A E TuP.03 Muting J TuP.24 Muto D TuP.49 Myers-Ward R L TuP.52; Mo2a.02 Myronov M TuP.10

N Na M WeP.33; TuP.26 Naas H MoP.30 Nagahisa Yuichi Tu3.01 Nagai D We1.01 Nagalyuk S TuP.44; WeP.07; TuP.35; MoP.28 Nagatsuma H WeP.27 Naidu Vidya LN.24 Naijo Takanori Mo2b.02 Nakagomi K MoP.14 Nakahira Y WeP.45 Nakamura K WeP.08 Nakane H We3.05 Nakata S MoP.26; Tu3.01 Nara J LN.21 Narumi T WeP.53 Nath A Mo2a.02 Nayak A WeP.14 Nee Hans-Peter Th2.02; We2b.03 Negri M TuP.31; MoP.54 Neudeck P G TuP.25 Neumann P WeP.17 Neyer T MoP.30 Ngo S WeP.26 Nguyen L Mo2a.03 Niebauer M TuP.01 Niethammer M WeP.17; WeP.18 Niitsuma Yuuta We2b.01 Nikiforov A WeP.47 Nikitina I P MoP.29 Nilsson D MoP.04 Nilsson T WeP.57 Nipoti R We1.03; Tu2a.03; TuP.04;

TuP.02; LN.20 Niwa H LN.01; LN.10 Noda T MoP.39 Nogami S WeP.42 Notsu H WeP.20 Novikov S N WeP.48

O O'Brien H Tu1.02 Oganesyan G A MoP.29 Ogunniyi A Tu1.02; MoP.44 Ogura M WeP.55 Ohnishi Y Tu3.03 Ohno T LN.21 Ohse N Tu3.03 Ohshima T We3.01; We3.03; MoP.25;

We3.05; WeP.17; WeP.27; WeP.18

Ohtani N TuP.09; TuP.36; TuP.08 Ohtomo K TuP.36 Okada N WeP.13 Okamoto M Mo3.02; Mo2b.04 Okamura K LN.12 Okuda K MoP.38



Okuda T MoP.16 Okumura H Tu2b.04; Mo2b.02; Mo2b.06;

Mo3.02; Mo3.05; Tu2b.01; TuP.50; We2a.04; WeP.14;

LN.09; Tu1.05; MoP.38 Okuyama S MoP.14 O'Loughlin M Tu1.02; WeP.05 Omae S LN.05 Omote K MoI.01; TuP.20 O’Neill A We1.06 Onoda S We3.01 Orai Y MoP.31 Orlov N G MoP.20 Orsi D TuP.31 Osawa H TuP.50; TuP.46; TuP.49;

MoP.07; Tu2b.04 Ostling M We2b.07; WeP.27; Tu1.01;

Tu1.04; TuP.15 Otsuki A We1.01; LN.09; Tu1.05 Ottaviani L MoP.21; TuP.21 Ou H MoP.08 Ou Haiyan Tu2a.05 Oyama Y TuP.05 Paisley M J WeP.05 Palais O MoP.21

P

Palmour J TuP.29; TuP.18; Tu1.02; Mo3.06 Papchenko B WeP.47 Park H TuP.26 Park J B WeP.30 Park Jong-Hwi TuP.33 Park Mi-Seon TuP.33 Pascu R MoP.55 Pathirana V We2b.04 Pecz B WeP.56 Pedersen H We2a.06; WeP.17 Peftitsis D Th2.02 Peng B WeP.01 Peng Yan TuP.42; TuP.43 Peng Z-Y WeP.41; WeP.09 Perez-Tomas A TuP.10; WeP.19 Peters D Tu3.02 Peyre H WeP.12; TuP.51 Pezard Julien WeP.52 Pezoldt Joerg MoP.13; MoP.32; WeP.50 Pickle S TuP.18 Pierson T MoI.04 Piluso N WeP.06 Piluso Nicolo Th1.06 Planson D TuP.55; WeP.52 Pobegen G MoP.27 Poder R WeP.57 Polychroniadis E K Mo2a.04 Popelka S MoP.58 Portail M Mo2a.03; TuP.51 Powell A R WeP.05 Pribeanu A MoP.55 Pristavu G MoP.55 Privitera S LN.03 Puzyk M WeP.47 Puzzanghera M LN.20; TuP.02; We1.03;

TuP.04

Q

Qian W N MoP.06 Quast J P MoI.03 Quiniou E MoP.21

R

Rabkowski J LN.11; Th2.02 Raghothamachar B Tu2b.06; Mo2b.05 Rahimo M MoP.46; We2b.05; Mo1.01 Ramm M S WeP.51; TuP.34 Ramsay E P TuP.03 Rang T TuP.27 Rapenne L MoP.54 Rascuna S WeP.26 Rauls Eva We3.04 Raynaud C WeP.52; TuP.55 Rebollo J Tu3.04 Reinwald G MoP.10 Reiprich J WeP.50

Rescher G MoP.27 Reshanov S A MoP.43; TuP.15; MoP.24 Richmond J Tu1.02; TuP.18 Rimoldi T TuP.31 Robinson H We2a.05 Roccaforte F Mo3.07; WeP.35 Roenkov A WeP.47 Roesner M We1.02 Rommel M TuP.01; TuP.17 Rong H MoP.56 Rorsman N WeP.02 Rossmann H MoP.24 Roy S K We1.06; MoP.35 Roy Shantanu MoP.24 Rubino Alfredo TuP.22 Rupp R We1.02; Mo1.02 Russell S WeP.44; MoP.12; WeP.19 Ryo M Tu1.05 Ryu S Tu1.02; TuP.18

S Sadamatsu Koji Tu3.01 Sadik D-P We2b.03 Sagawa M Tu3.05 Saggio M WeP.26 Saito H LN.18 Saito A TuP.05 Saitoh Y WeP.20 Sakaguchi T WeP.42 Sakai Takenobu LN.15 Sakurada T Mo2b.06 Salanitri M TuP.53; We2a.03 Salem B MoP.54 Salemi Arash Tu1.04 Salviati G TuP.31 Sampayan S E WeP.31 Sanchez E Tu2b.06; Mo2b.05; MoI.03 Sang S C WeP.30 Sankin V I LN.13 Sano K MoP.39 Sano Y WeP.45 Sasaki H WeP.53 Sasaki K Mo2a.01 Sato Hiroshi WeP.24 Sato S Tu3.06; TuP.09; TuP.36;

TuP.08; Tu3.05; WeP.24 Sato T MoP.31 Sato Tadashi WeP.37 Sato Takahiro WeP.08 Savkina N S MoP.20 Savtchouk A MoI.24; WeP.03 Schelldorfer Rolf MoP.24 Schimizu T LN.21 Schneider C W WeP.36 Schodt B WeP.57 Schoeck J TuP.17 Schofer B LN.22 Schoner A MoP.43; MoP.24; TuP.15 Schuh P Tu2b.02 Schustereder W We1.02 Seaman J C WeP.05 SEJIL Selsabil TuP.55 Seki H Mo2b.04 Senzaki Junji Mo2b.06 Seo Jung-Doo TuP.33 Seo W -S TuP.38 Seok O TuP.26; TuP.07; TuP.16 Seredova N MoP.29 Sergushichev K MoP.43 Severino A We2a.03; WeP.35 Sezaki H WeP.27 Sezaki Hiroshi WeP.37 Shah V A TuP.10 Shakir M MoP.40 Sharma Y MoP.56; WeP.11; MoP.12; WeP.19 Shcherbachev K WeP.07 Shen Huajun MoP.47 Shen Hua-Jun WeP.09; WeP.41 Shen Z W LN.26 Shi Er-Wei WeP.40 SHIMA A MoP.36; Tu1.06; Tu3.05; Tu3.06 Shimamoto Y Tu3.06; Tu3.05; Tu1.06

Shimizu H Tu3.05; Tu3.06 Shimura T Th1.03; We1.01 Shinchi D MoP.38 Shinohara M WeP.42 Shioda Kohei TuP.45 Shiomi H TuP.20; Tu3.03 Shiraishi K LN.14 Shukailo V P MoP.20 Siddiqui Amna LN.23 Sigg H WeP.36 Simin D MoP.25 Singh Elaa J MoI.23 Singh Rajiv K MoI.23 Singh Shakti LN.23 Sleptsuk N TuP.27; WeP.25 Smirnov A A MoP.43 Smith D A TuP.03 Soler V Tu3.04 Sometani M Mo3.02; We1.01 Son N T We3.05; We3.03; WeP.18; WeP.17 Song Qing Wen WeP.15; WeP.16 Song Xiaoqing TuP.28 Souliere V We2a.01; TuP.56; WeP.52 Sozzi G We1.03; TuP.04 Sperlich A MoP.25 Spry D J TuP.25 Stahlbush R E TuP.52 Stambouli V MoP.54 Stauden T WeP.50; MoP.13 Stavrinidis A We1.05; MoP.41 Stenberg P We2a.06; WeP.17 Strel'chuk A M MoP.20 Stum Z Tu1.03 Suda J LN.01; Th1.05; LN.10; Mo2a.05;

Mo3.01; MoP.11; Tu2a.04 Suda Jun Mo2b.01; MoP.16 Sudo M WeP.13 Sugawara Y TuP.06; WeP.13 Sukkaew P We2a.06 Sumakeris J J WeP.05 Sumina R MoP.18 Sun G S LN.26 Sun J TuP.12 Sun Qiu Jie WeP.16 Sun Weifeng TuP.28 Sun Y Q MoP.06 Sundaramoorthy V MoP.46 Sung M Y MoP.42; WeP.43 Sung WOONGJE MoP.49; TuP.28 Sunkari S MoP.30 Suo Hiromasa Tu2b.04 Suvanam Sethu Saveda WeP.23 Suzuki T WeP.55; We2b.01 Suzuki Yuya WeP.08 Sveinbjornsson E Mo3.03; WeP.02 Svensson B G TuP.02; TuP.12; We3.06;

Tu2a.03; Mo2a.06 Svilicic B Th2.03 Syvajarvi M TuP.34; TuP.12 Szalkai Dora TuP.21

T

Tabachnick C Tu2a.06 Tabuchi Y TuP.08 Tadatomo K WeP.13 Tagawa M TuP.40; Tu2b.03; Tu2b.05 Tajima N LN.21 Takahashi Hiroki WeP.24 Takahashi Y TuP.06; TuP.45 Takano K MoP.38 Takayama K LN.12 Takenaka K Tu1.05 Takeshita A MoP.38 Takeuchi T MoP.08 Takeuchi Y LN.05 Takigawa A TuP.05 Tamaso H WeP.20 Tanaka H Tu2a.04 Tanaka S WeP.54 Tanaka Y Mo3.05; WeP.14 Tang Xiao Yan WeP.15; WeP.16



Tang Yidan MoP.47 Tang Yi-Dan WeP.09; WeP.41 Tanimoto S WeP.55; We2b.01 Tanisawa H WeP.24 Tawara T Tu1.05; Tu2a.02; We2a.02 TEGA N Tu3.05 Teodorescu V S We2b.05 Teramoto Y WeP.42 Teranishi H TuP.05 Thierry-Jebali N TuP.15 Thogersen A TuP.12 Tian L X LN.26 Togashi R Mo2a.01 Toh D WeP.45 Tokuda Yuichiro Mo2b.02 Tomas A P MoP.12 Toompuu J TuP.27 Toompuu Jana WeP.25 Torimi S WeP.42 Trajkovic T We2b.04 Trinh X T We3.05 Trupke M MoP.25 Tsuchida H Tu2a.02; We2a.02; Tu1.05;

Mo2b.02 Tsuge H TuP.09; TuP.36; TuP.08 Tsuguki Y MoP.38 Tsukimoto S Mo2b.06 Tsutsui R MoP.18 Tudisco S LN.03

U

Udugampola N We2b.04 Ujihara T TuP.40; Tu2b.03; Tu2b.05; LN.15 Ul Hassan J TuP.47 UNDELAND T Th2.02 Unegg G MoP.10 Urciuoli D P TuP.30 Usikov A WeP.47

V

Valente D MoP.09 Vamvoukakis K MoP.41; We1.05 Van Brunt E Tu1.02; TuP.18 Van Zeghbroeck B We2a.05 Vasilevskiy K V MoP.35 Vasiliev A TuP.44 Vavasour O MoP.12 Vervisch V TuP.21 Vines L Mo2a.06 Visikovskiy A WeP.54 Vivona M WeP.35; Mo3.07 von Bardeleben H J We3.04

W

Walker M MoP.12 Wang G TuP.18 Wang Hua-Jie WeP.40 Wang L LN.26 Wang S Z LN.02 Wang Y T WeP.01 Wang Yi-Yu WeP.41 Ward P J MoP.04 Watanabe H MoP.26; Th1.03; We1.01 Watanabe K WeP.24 Watanabe T MoI.01 Weber Heiko B Mo2b.03; Mo3.04 Weber Jonas Mo2b.03 Wei Yi Tu2a.05 Weisse Julietta Mo3.04 Wellmann P J Tu2b.02 Wen Z X LN.26 Weng M H TuP.03; MoI.22 Wheeler V D Mo2a.02 Whetzel Lloyd MoI.21 Widmann M WeP.17; WeP.18 Wilson Andy MoI.21 Wilson Marshall MoI.24; WeP.03 Winkler Uwe TuP.14 Winters M WeP.02 Woerle J WeP.36 Wong M H Mo2a.01 Wood G Th2.03 Wood N MoP.35

Woodend L J TuP.10 Wrachtrup J WeP.17; WeP.18 Wright D N TuP.12 Wright N G MoP.35; WeP.32; We1.06;

TuP.03 Wu P TuP.11

X

Xiao S TuP.40; Tu2b.03 Xie Xuejian TuP.42; TuP.43 Xin Bin TuP.54 Xu W Mo3.06 Xu X TuP.11 Xu Xiangang TuP.42; TuP.43 Xuan Rong MoP.05

Y

Yabuki N WeP.42 Yajima D MoP.14 Yakimova R TuP.34 Yamaguchi M WeP.49; MoP.39 Yamakawa S MoP.26; Tu3.01 Yamakoshi S Mo2a.01 Yamamoto S Tu3.01 Yamamoto Y Tu3.01 Yamasaki S WeP.55 Yamasaki T LN.21 Yamashita Mari We2b.01 Yamashita T Mo2b.02 Yamauchi K WeP.45 Yan G G LN.26 Yang C H WeP.33; WeP.28; TuP.07; TuP.26 Yang C W TuP.38 Yang Chengyue MoP.47 Yang Shuai WeP.16 Yang Xianglong TuP.42; TuP.43 Yang Y Mo2b.05; Tu2b.06 Yano H Mo3.02 Yano Hiroshi Th1.01 YAO Y TuP.06; WeP.13 Yasuhiro S MoP.36 Yeghoyan T TuP.56 Yen C T MoP.22 Yokoe D WeP.13 Yonezawa Y LN.09; We2a.04; Tu1.05 Yoo C H TuP.38 Yoshikawa T TuP.37; TuP.41; WeP.53;

LN.18 Yoshimoto H Tu1.06 Yoshino J MoP.38 Young R A R MoI.22; TuP.03 Yuan Hao TuP.54; WeP.16 Yuan Lei WeP.15 Yuferev V TuP.29 Yun S B WeP.33; TuP.26

Z

Zargaleh S A LN.08 Zekentes K We1.05; MoP.41 Zelenin V V MoP.20 Zeng Y P LN.26 Zetterling C M WeP.28; MoP.40; We2b.07;

WeP.27; Tu1.04; WeP.23 Zhang Andy TuP.15 Zhang F LN.26 Zhang Fusheng TuP.43 Zhang J Tu1.02 Zhang Jon TuP.29 Zhang Q TuP.18 Zhang Xu-Fang WeP.09 Zhang Y M WeP.01 Zhang Yi Men WeP.15; WeP.16 Zhang Yi Meng WeP.16 Zhang Yu Ming WeP.16; WeP.15; TuP.54 Zhao J H MoP.06 Zhao W S LN.26 Zhao Y LN.10 Zheng Y WeP.46 Zhou Ren-Wei WeP.40 Zhu Li MoP.24 Zielinski M TuP.51; Mo2a.03; WeP.12 Zippelius Bernd TuP.14 Zwieback I TuP.11


Documents

Conference Information and Technical Programme · PDF fileErlangen-Nurnberg, Germany T. Kimoto Kyoto University, ... 08:45 Registration 08:45 ... Hungarian Academy of Sciences,