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0 Condensed Résumé with Most Cited and Recent Publications Jagdish (Jay) Narayan The John C. C. Fan Family Distinguished Chair Professor and ORNL Distinguished Visiting Scientist Room 3030, Engineering Building I, Centennial Campus Department of Materials Science and Engineering North Carolina State University Raleigh, NC 27695-7907, USA Phone: (919) 515-7874; Fax: (919) 515-7642; E-mail: [email protected] Birth Place : Kanpur, India, Naturalization Date : March 18, 1981 Education Ph.D. (1971) and M.S. (1970) University of California, Berkeley; B. Tech. (1969 Univ First Rank Medalist, Highest Hons. & Dist.) I.I.T., Kanpur, India, 1997 Distinguished Alumnus Award Major field- Materials Science and Engineering; Minor fields- Electrical and Computer Engineering and Solid State Physics Employment 2002- The John C. C. Fan Family Distinguished Chair Professor 1990- NCSU Distinguished University Professor (Materials Science and Engineering, Electrical and Computer Engineering and Physics) and Director of Center for Advanced Materials and Smart Structures 2007- ORNL Distinguished Guest Scientist 1990-92 National Science Foundation, Division of Materials Research, Director 1983- North Carolina State University, Professor 1984-86 Microelectronics Center of North Carolina, Director 1972-84 Oak Ridge National Lab., Senior Scientist and Leader of Thin Film and Electron Microscopy Group 1971-72 Lawrence Berkeley National Lab., Research Metallurgist Professional Affiliations: Member: Albert Sauveur Achievement Award, ASM International; Member TMS Awards Committee; Star Nanotech, LLC Board Chair; Q-Carbon, LLC Board Chair Past Member: MRS Fellow Committee; MRS Governing Board Member; ASM Awards Policy Committee Chair; ASM Gold Medal Committee Chair; Edward DeMille Campbell Lecture and Prize Committee Chair; Kopin Corporation Board Member Professional Association/Society Membership: Materials Research Society (Member and Inaugural Fellow); American Physical Society (Life Member and Fellow); The Metals, Minerals and Materials Society (TMS Life Member and Fellow); American Association for the Advancement of Science (AAAS Fellow); ASM International (Fellow); MRS-I (Honorary Member); Bohmische Physical Society (Fellow);

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Page 1: Condensed Résumé with Most Cited and Recent · PDF fileCondensed Résumé with Most Cited and Recent Publications Jagdish (Jay) Narayan ... Research Metallurgist Professional Affiliations:

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Condensed Résumé with Most Cited and Recent Publications

Jagdish (Jay) Narayan

The John C. C. Fan Family Distinguished Chair Professor and

ORNL Distinguished Visiting Scientist

Room 3030, Engineering Building I, Centennial Campus

Department of Materials Science and Engineering

North Carolina State University

Raleigh, NC 27695-7907, USA

Phone: (919) 515-7874; Fax: (919) 515-7642; E-mail: [email protected]

Birth Place : Kanpur, India, Naturalization Date : March 18, 1981

Education

Ph.D. (1971) and M.S. (1970) University of California, Berkeley; B. Tech. (1969 Univ First

Rank Medalist, Highest Hons. & Dist.) I.I.T., Kanpur, India, 1997 Distinguished Alumnus

Award

Major field- Materials Science and Engineering; Minor fields- Electrical and Computer

Engineering and Solid State Physics

Employment

2002- The John C. C. Fan Family Distinguished Chair Professor

1990- NCSU Distinguished University Professor (Materials Science and Engineering,

Electrical and Computer Engineering and Physics) and Director of Center for

Advanced Materials and Smart Structures

2007- ORNL Distinguished Guest Scientist

1990-92 National Science Foundation, Division of Materials Research, Director

1983- North Carolina State University, Professor

1984-86 Microelectronics Center of North Carolina, Director

1972-84 Oak Ridge National Lab., Senior Scientist and Leader of Thin Film and Electron

Microscopy Group

1971-72 Lawrence Berkeley National Lab., Research Metallurgist

Professional Affiliations:

Member: Albert Sauveur Achievement Award, ASM International; Member TMS Awards

Committee; Star Nanotech, LLC Board Chair; Q-Carbon, LLC Board Chair

Past Member: MRS Fellow Committee; MRS Governing Board Member; ASM Awards Policy

Committee Chair; ASM Gold Medal Committee Chair; Edward DeMille Campbell Lecture and

Prize Committee Chair; Kopin Corporation Board Member

Professional Association/Society Membership:

Materials Research Society (Member and Inaugural Fellow); American Physical Society (Life

Member and Fellow); The Metals, Minerals and Materials Society (TMS Life Member and

Fellow); American Association for the Advancement of Science (AAAS Fellow); ASM

International (Fellow); MRS-I (Honorary Member); Bohmische Physical Society (Fellow);

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National Academy of Sciences, India (Life Member and Fellow); National Academy of

Inventors (Life Fellow)

Summary of Recent Accomplishments:

Narayan discovered recently Q-carbon and direct conversion of carbon into diamond, in

addition to sequel discovery of Q-BN and direct conversion of h-BN into c-BN and related

nanostructured materials. This discovery started with his seminal papers in Science (Vol.

252,416 (1991) and Vol. 204, 461 (1979)) which culminated in 2015-16 with series of papers in

APL Materials 3, 100702 (2015); APL Materials 4, 202701 (2016); J. Appl. Phys. 118, 215303

(2015); J. Appl. Phys. 119, 185302 (2016); Materials Res. Letters 2016;

http://dx.doi.org/10.1080/21663931.2015.1126865; Materials Res. Letters, 2016

http://dx.doi.org/10.1080/21663831.2016.1249805; and ten US Patents and two International

Patents Pending (62/245,108 (2015); 62/202,202 (2015); and 62/331.217 (2016).

Discoveries of Q-carbon and Q-BN and direct conversion of carbon into diamond and h-BN into

c-BN at ambient temperatures and pressures in air, represent unparalleled contributions to the

field of materials science and new materials with greatest anticipated impact on advanced

technology ranging from high-power devices and quantum computing to bio-nano- and magnetic

sensors and targeted drug therapies. Narayan’s group has bypassed thermodynamics with the

help of kinetics and time control by nanosecond laser melting and created super undercooled

state of carbon and h-BN. The quenching of super undercooled state leads to formation novel Q-

carbon and Q-BN with many unique properties, including super hardness, room-temperature

ferromagnetism, and very large negative electron affinity. Diamond and phase-pure c-BN

microstructures are created in the form of nanodots, microcrystals, nanoneedles, and

microneedles. Large-area singles are grown by providing a template for epitaxial growth during

quenching of super undercooled liquid. A remarkable aspect of this discovery is that heating can

be confined to the carbon layer in such a way that while it melts underlying substrate remains

close to the ambient. Thus, direct conversion of carbon into diamond and h-BN into c-BN is

achieved at ambient temperatures and pressures in air. This leads to pure and doped diamond

and c-BN depositions on heat sensitive polymer substrates, thus facilitating next-generation of

flexible electronics. Controlled introduction of nitrogen-vacancy (NV) center defects (higher

than solubility limits) in diamond has potential for single-photon sensors, nanoscale electronic

and magnetic sensing, single-spin nuclear magnetic resonance, nanoscale thermometry,

fluorescent biomarkers and nanosensors. The group has also grown diamond on c-BN by pulsed

laser deposition of carbon at 500C without the presence of hydrogen, and created c-BN and

diamond epitaxial composites. This research represents a major breakthrough for diamond and

c-BN based high-power electronic and photonic devices, and host of other applications related

to high-speed machining, deep-sea drilling, field-emission displays and biomedical applications.

Narayan has published over 500 papers in archival journals (Science, Physical Review Letters,

Physical Review B, Applied Physics Letters, Journal of Applied Physics, Acta Materialia,

Philosophical Magazine..) and equal number in Conference Proceedings with over 23,000

citations (Google Scholar), h-index over 75, and 46 Citation Classics with citations over 100 to

1200, in addition to 40 Patents and 9 edited books. His top twelve highly cited papers have over

5,500 citations with seminal contributions in laser annealing and pulsed laser deposition, domain

matching epitaxy across the misfit scale, defects and interfaces in thin film heterostructures, and

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novel nonequilibrium and nanostructured materials. He has published over 235 papers in Applied

Physics Letters and Journal of Applied Physics alone, which ranked as top journals among the 95

journals in the Applied Physics and Materials Science Category tracked by Thomson Reuters.

Narayan’s research has been duly recognized by the American Institute of Physics (AIP) in last

year's Nobel Prize in Physics on Blue Light Emitting Diodes (LEDs) made from Gallium

Nitrides (III-nitrides) based materials. The AIP has singled out Narayan’s highly cited paper (J.

Appl. Phys. 87, 965 (2000) with over twelve hundred citations) on the development of GaN

based materials used in the Nobel Laureates' work. In fact, all high efficiency GaN- based

LEDs are manufactured today using a process made possible by Narayan’s invention of

quantum nanostructuring or Nano-Pocket LEDs (AIP Publishing http://aip-info.org/1XPS-2V90F-

B8C9LRLX04/cr.aspx).

Narayan’s pioneering contributions in laser-solid interactions and transient thermal processing,

pulsed laser deposition, defects in semiconductors, and domain matching epitaxy have resulted in

new materials and thin film heterostructures across the misfit scale integrated with practical

substrates such as silicon and sapphire. The following scientific contributions by Professor

Narayan and his group have impacted profoundly advanced materials and technologies thereof.

1) New Era in Oxide Electronics

Groundbreaking innovations (J. Narayan, US Patent # 8, 222,740 B2 (2012)) by Professor

Narayan and his group in nanostructured transparent conducting oxides have lowered the cost

of flat panel display devices and launched a new era in oxide electronics. The ZnO based

transparent conductors enhance optical power and lower manufacturing cost and switching

voltage of GaN based LEDs. He has also developed the first functional oxide thin films that can

be used efficiently in electronics, opening the door to an array of new high-power devices and

smart sensors. This is the first time that researchers have been able to produce positively

charged (p-type) conduction and negatively charged (n-type) conduction in a single oxide

material, launching a new era in oxide electronics. (For latest breaking news, Google: new era

in oxide electronics narayan)

2) Multifunctional Smart Sensors and High-Power Devices on a Computer Chip

The researchers have developed the means to, for the first time, integrate gallium nitride (GaN)

sensors and devices directly into silicon-based computer chips. “This enables the development

of high-power – high-voltage and high-current – devices that are critical for the development of

energy distribution devices, such as smart grid technology and high-frequency military

communications.” Professor Narayan and his students have patented (US Patent # 7,803,717,

(2010)) a new technology which is expected to revolutionize the global energy and

communications infrastructure. (For fast breaking news, Google: Multifunctional Smart

Sensors and High-Power Devices on a Computer Chip narayan)

3) Nanotechnology solutions to enhance fuel efficiency of automobiles and trucks and reduce

exhaust pollution

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Narayan has invented (US Patent # 7,994,105 (2011) and Patents in India, Turkey, China

granted) nano-oil and nano-fuel additives to improve fuel efficiency as much as 25% and reduce

exhaust pollution as much as 50%. While nano-oil additives reduce friction by hardening and

smoothening the internal surfaces of the combustion engines, the fuel additives further enhance

the efficiency by improving the combustion efficiency. These products are being tested in USA

and abroad for major marketing and sales through his company Star Nanotech, Inc.

4) High-efficiency Nano-Pocket LEDs for Solid State Lighting

Narayan’s inventions have shown that by quantum confining the carriers in Nano-Pockets by

thickness variation of quantum wells, it is possible to enhance internal quantum efficiency of

III-nitride and II-oxide based light emitting diodes (LEDs) to match and exceed the luminosity

of conventional fluorescent light sources. Today most of the high-efficiency LEDs in the market

are being manufactured by using the Narayan’s inventions of quantum confinement of carriers

by thickness variation of quantum wells containing Nano-Pockets. These patents (US Patents #

7122841, 6881983, 6847052, 6734091) have been licensed by the Kopin and Kobrite

Corporations.

5) Domain Epitaxy and Self-Assembled Nanostructures

Narayan’s discoveries in this area have led to three-dimensional epitaxial nanodot structures of

magnetic materials, opening a new gateway for information storage over 6 Tbits per chip. One

Tbits per chip corresponds to 250 million pages of information. This groundbreaking discovery

was hailed as one of the scientific breakthroughs of the year 2004 by the US National Science

Foundation. Following these discoveries, this technology is being used to create super data

storage disks (US Patents # 5,406,123; 6,955,985; 7,105,118). The first two patents on domain

matching epitaxy have been licensed by the Kopin Corporation.

Summary of Overall Scientific and Technological Accomplishments:

Narayan has made fundamental contributions in defects, diffusion, ion implantation and laser-

solid interactions, which have led to precise determination of activation energies for diffusion in

bulk and along dislocations and grain boundaries, critical energy for amorphization, and

quantitative crystallization and solute trapping and laser annealing models. These seminal

contributions have resulted in technological breakthroughs: (1) Formation of laser-diffused p-n

junctions and solar cells by laser processing (US patent # 4,147, 563 and IR-100 Award); (2)

Defect-free annealing of semiconductors (Science paper, US-DOE Award, US Patent #

4,181,538, and IR-100 Award); and (3) Laser method for forming low-resistance Ohmic

contacts, diamond and diamondlike films (Science paper and US Patent # 4,261,764).

Narayan pioneered the concept of solute trapping in semiconductors by his discoveries of laser

annealing in the late seventies and the formation of supersaturated semiconductor alloys for

which he received 1981 US-DOE Award and 1983 IR-100 on Supersaturated Semiconductor

Alloys that form the backbone of modern Integrated Circuits. Narayan received the 2011 Acta

Materialia Gold Medal for these pioneering contributions and his leadership in materials science

worldwide. The concept of solute trapping, which was introduced by John Cahn in the early

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seventies, resulted in the 2011 Kyoto Prize for Cahn and the 2011 Nobel Prize for Dan

Shechtman for his work on quasicrystals which formed due to Mn solute trapping in aluminum-

manganese alloys.

Narayan’s laser annealing research transitioned to pulsed laser deposition which led to: (1) First

key experiments and highly cited theoretical model, leading to PLD of high-transition

temperature superconductors (US Patent # 5,063,202); (2) Single-crystal TiN on Si with lattice

misfit over 22% (US patent # 5,406,123); (3) Novel ZnMgO and CdMgO alloys and thin film

heterostructures (US Patents # 6,423,983 & 6,518,077).

Narayan invented domain matching epitaxy (DME), which is based upon matching of integral

multiples of lattice planes across the film-substrate interface, to address epitaxial growth of

heterostructures across the misfit scale. The proposed DME paradigm and strain relaxation

mechanisms were verified by in-situ X-ray diffraction studies in a Synchrotron. Thus, 2% misfit

is accommodated by 49/50, and 25% by 3/4domain matching. The misfit in between such as

22.5% (which is close to TiN/Si) is accommodated by the principle of domain variation where

3/4 and 4/5 domains alternate with equal frequency (US Patents # 5,406,123 & 6,955,985).

The DME paradigm is revolutionizing the growth and integration of III-nitrides and II-oxides

on polar (c-sapphire) and nonpolar (r-sapphire and Si(100)), where fully relaxed films can be

grown on substrates involving large misfits. Kopin ( and Kobrite) Corp have licensed Narayan’s

dozen patents on DME and novel ZnMgO-ZnCdO materials , in addition to his patents on

Quantum confined NanoPocket LEDs and low-resistivity transparent epitaxial Ohmic contacts

to manufacture high efficiency LEDs for solid state lighting(US Patents # 6,881,983;

6,847,052; 6,734,091; 7,122,841).

Narayan invented integrated smart sensors and 3-D self-assembled nanostructures with oriented

magnetic nanodots formed by the DME paradigm for information storage which NSF hailed as

one of the breakthroughs of the year 2004 (US Patent # 7,105,118). Narayan’s work on bulk

nanocrysatlline materials, which started with Phys. Rev. Lett. 46, 1491 (1981); US Patent #

4,376,755 and IR-100 Award (1982), started nanotechnology revolution in metal-ceramic

nanocomposites. His most recent work on inverse Hall-Petch and grain softening, and twinning

deformation in nanocrystalline materials has been highly cited and duly recognized as a seminal

contribution to the field of nanomaterials.

Recent Honors and Awards:

1) Member of National Academy of Engineering (2017)

2) Life Member and of Fellow National Academy of Inventors (2014)

3) Life Member and Fellow National Academy of Sciences, India (1982, Limited to 100

Foreign Members)

4) 2014 North Carolina Science Award (Highest Civilian Honor of the State of North

Carolina) bestowed by the Governor of North Carolina, first Materials Scientist and

the sole winner at the Golden Jubilee Celebrations of North Carolina Awards. Past

winners included seven Nobel Laureates in Science, and others: Maya Angelou,

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Charlie Rose Andy Griffith, Charles Kuaralt, John Hope Franklin in literature,

Fine Arts and Public Service.

5) 2014 TMS Robert Franklin Mehl Gold Medal, Pinnacle Honor from The Materials

Society (most prestigious honor from World’s oldest -143 years old- professional

society) for Pioneering Contributions in Nanomaterials and Nanotechnology leading to

useful commercial products.

6) 2015 Professor SC Jain Memorial Lecture and Prize, 2015 IWPSD, December 7-10,

2015, IISc Bangalore, India.

7) 2016 ECE Emerging Materials Research Prize

8) 2015 Emerging Materials Research Prize (Best Paper in the Journal):

Mutlifunctional Heterostructures Integrated on Si(100), Emerging Materials Research 4,

50-70 (2015).

9) 2014 Mehl Medal from the Brazilian ABM-TMS and presented plenary keynote talk at

its 69th Annual ABM-TMS Meeting in Sao Paulo, July 20-24, 2014.

10) 2014 The Institute of Metals Lecture Award of TMS on Frontiers in Thin Epitaxy

and Novel Nanostructured Materials delivered at the 143rd TMS Annual Meeting in

San Diego, California, February 16-20, 2014

11) 2014 TMS International Symposium on Frontiers in Nanostructured Electronic and

Structural Materials and Their applications, Honoring Professor Narayan, at the 143rd

TMS Annual Meeting in San Diego, California, February 16-20, 2014

12) 2014 O. Max Gardner Award and Prize, Highest Award of the UNC System

The O. Max Gardner Award is the Highest Faculty Honor of The University of North

Carolina System comprising of 17 universities, given annually to one faculty member

whose academic and research contributions have made maximum impact on the human

race. The Winner receives a medallion and Prize of $35K. Professor Narayan is

recognized for his groundbreaking contributions in nanoscience and nanotechnology

leading to useful products for the society at large. This is the first in the field of

materials science in the 66 year history of the award named after 57th Governor of

North Carolina who also served in Roosevelt and Truman administrations. Past winners

included Nobel Laureate Oliver Smithies of UNC Chapel Hill. There was a thirty-

minute documentary on UNC-TV (April 16, 2014), covering the unprecedented

academic and research accomplishments of Professor Narayan in nanoscience and

nanotechnology, which have impacted the society. In addition, NCSU Memorial Bell

Tower (Prominent Historical Landmark in Raleigh) was lighted in Professor Narayan’s

honor on May 2 2014, after the Chancellor’s reception. The award announcement was

covered by The News & Observer on April 12, 2014. There was a special ceremony on

the platform by the NCSU Chancellor and the UNC Board of Governors to celebrate O.

Max Gardner Award Winner at the 2014 NCSU Convocation on May 10, 2014.

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13) Journal of Materials Research Volume 28, 2013 devoted to Professor Narayan’s

research on FRONTIERS IN THIN FILM EPITAXY AND NANOSTRUCTURED

MATERIALS, part of 2011 MRS Forum in honor of Prof. Narayan

14) Acta Materialia Special Issue Volume 61, Issue 8, Pages 2703-3140 (May 2013)

Devoted to Professor Narayan’s Gold Medal

(http://www.sciencedirect.com/science/journal/13596454/61/8)

15) 2012 Alexander Holladay Medal (Highest NC State Faculty Honor)

16) 2011 Acta Materialia Gold Medal and Prize for pioneering contributions and

leadership in materials science worldwide, an international prize sponsored by the

federation of 33 professional societies

17) 2011 MRS Forum: 2011 MRS Spring Meeting, San Francisco, April 25-30, 2011.

Acta Materialia Gold Medal Forum: Frontiers in Thin Film Epitaxy and

Nanostructured Materials (Honoring Professor Jay Narayan): Forum Chairs -Amit

Goyal (Oak Ridge National Lab); Bill Appleton (University of Florida, Gainesville);

Sungho Jin (UC San Diego); Justin Schwartz (NCSU). Funded by Kopin Corp and

Army Research Office

18) 2011 MS&T Meeting, Columbus, Ohio, October 17-20, 2011. International

Symposium on Advances in Nanostructured Materials and Applications (Honoring

Professor Jay Narayan). Co-Chairs: Haiyan Wang and Xinghang Zhang (Texas A&M);

Ravi Ravindra (NJIT); Yuntian Zhu (NC State); Rajiv Singh (University of Florida);

Alan Ardell (NSF); and John Prater (ARO). Funded by Army Research Office and

Acta Materialia (Elsevier), Special Volume 61 (8) of Acta Materialia devoted to this

Sympoium

19) 2011 Reynolds Prize, highest NCSU honor for excellence in research, teaching and

extension

20) 2011 Lee Hsun Lecture Award from the Chinese Academy of Sciences

21) Acta Materialia Award Forum Chair: Materials Research for Advancing Science and

Society (Honoring Professor Millie Dresselhaus): Forum Chair- Jay Narayan (NC State).

Funded by Army Research Office and Acta Materialia (Elsevier) at 2012 MRS Fall

Meeting, Boston, November 25-30, 2012.

Other Honors: 2004 ASM Edward DeMille Campbell Lecture (New Frontiers in Thin Film

Growth and Nanomaterials) and Prize; 1999 ASM-International Gold Medal (Highest honor

from world’s largest materials science and technology society); 2008 MRS Inaugural Fellow

(one of the first 34 materials researchers in the world); 2005 TMS Symposium on NEW

FONTIERS IN THIN FILM GROWTH AND NANOMATERIALS held in honor of Professor

Narayan at the 134th TMS Annual Meeting in San Francisco; Journal of Electronic Materials

(May 2006 Issue) Published honoring Professor Narayan; 2003 Electronic Products Magazine’s

“Product of the Year” Award; ASM Best-in-Class Award (1971); DOE (Div. of Materials

Sciences) Award for Outstanding Research (1981); IR-100 Award (1979) for Laser Diffused p-

n Junctions and Devices; IR-100 Award (1981) for Novel Supersaturated Semiconductor

Alloys; IR-100 Award (1982) for New Nanocrystalline Metal-Ceramic Composites; 1992 NSF

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Distinguished Service Award; 1997 IIT/K Distinguished Alumnus Award; NCSU –

Distinguished University Research Professorship (1990- ); 2001ASM-International Best

Paper Award; EMSA – Best Paper Award (1994); One of the most cited authors for Journal

articles published 1980 through 1997 (Max-Planck Citation Index), Google Scholar Citation

Index: over 25,000 Citations, h-index >79, Citation Classics 50 (Citations: >100-1220).

http://chronicle.com/article/Electronics-Pioneer-Sheds/65783/.

Recent Plenary and Invited Talks at International Conferences

1) Invited Talk: Self-Assembly of Epitaxial Magnetic Nanostructures

2010 MRS Spring Meeting, San Francisco, April 5-9, 2010.

First Place Prize: Poster Paper on Mechanism of Semiconductor to Metal Transition of

VO2 Thin Films (Symposium N) 2010 MRS Spring Meeting, San Francisco, April 5-9,

2010

2) Plenary Invited Talk: Frontiers in Nanoscience and Nanotechnology,”

2010 Materials Conclave, The IITK Golden Jubilee Conference, December 19-21, 2010

3) Plenary Invited Talk : Defects and Interfaces in nanostructured Materials: Opportunities

and Challenges

2011 MRS Spring Meeting April 24-29, 2011

7) Plenary Invited Talk: Frontiers in Nanomaterials Processing and Characterization

2009 IWPSD: Fifteenth International Workshop on the Physics of Semiconductor

Devices,

Dec 15-19, 2009, New Delhi, India.

8) Plenary Invited Talk : Frontiers in Nanostructured Materials for Next-Generation

nanotechnology

Indo-US Conference on Fabrionics: Science of Advanced Fabrication, December 9-12,

2009, IIT, Kanpur, India.

Session Chair at Indo-US Conference on Fabrionics: Science of Advanced Fabrication,

December 9-12, 2009, IIT, Kanpur, India.

9) Keynote Address, Plenary Invited Talk: Transition from Nanoscience to

Nanotechnology to Manufacturing

Indo-French Workshop on Nanoscience and Nanotechnology, October 12-14, 2009,

Ansal Institute of Technology, Gurgaon, India.

Panel Chair on Future Directions in Nanoscience, Nanotechnology and Manufacturing

10) Keynote Address, Plenary Invited Talk: Nanoscience and Nanotechnology Impact on

Energy and Environment

International Conference on Nanoscience and Nanotechnology (AIT NANO- 2009),

October 14-17, 2009, Gurgaon, India.

Panel Chair on Future Directions in Nanoscience, Nanotechnology

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11) Keynote address: Twenty-fifth Anniversary of Kopin Corporation, Gillette Stadium,

Foxboro, MA.

Nanotechnology Innovations for Next Generation (April 28, 2010)

12) Plenary Invited Talk: Frontiers in Nanostructured and Nanotechnology and Impact on

Society

ICONSAT 2012, International Conference on Nanoscience and Nanotechnology,

Jan 20-23, Hyderabad, India.

13) Chair: Indo-US Forum on Nanoscience and Nanotechnology at 2012 ICONST, Jan

21, 2012. 14) Plenary Session Chair at the ICONSAT 2012, International Conference on Nanoscience

and Nanotechnology, Jan 20-23, Hyderabad, India.

15) Plenary Invited Talk: Frontiers in Nanostructured Materials for Next-Generation

Nanotechnology

2012 VMN, International Conference on VLSI, MEMS and NEMS, Jan 24-25, 2012,

Amity University, Noida, India

16) Plenary Session Chair at the 2012 VMN (VLSI, MEMS & NEMS) Conference

17) Invited Talk: 2012 MRS Fall Meeting, November 25-30, 2012, Boston, MA

Title: Designing Novel Nanostructured Materials with Improved Properties

18) Chair: MRS Forum at the 2012 MRS Fall Meeting, November 25-30, 2012, Boston,

MA

19) Plenary Invited Talk, 2011 MS&T Meeting, October 16-20, 2011, Columbus, Ohio

20) Plenary Keynote Speaker, ICCE-20, Twentieth Annual International Conference on

Composites and Nanoengineering, July 22-28, 2012, Beijing, China.

Title: Frontiers of Nanostructured Materials and Nanocomposites

21) The 2012 Lee Hsun Award Lecture, July 20, 2012, Shenyang, China, Sponsored by

Chinese Academy of Sciences, IMR and Shenyang National Laboratory

Title: Frontiers in Nanostructured Materials for Next-generation Nanotechnology

22) The 2014 TMS (The Materials Society) Institute of Metals Lecture on the Frontiers

in Thin Film Epitaxy and Novel Nanostructured Materials in the Symposium on

Frontiers in Nanostructured Electronic and Structural Materials and Their Applications,

held in his honor at the 143rdTMS Annual Meeting in San Diego, February 16-20, 2014.

23) Plenary Invited Talk on Frontiers in Nanomaterials and Impact on Nanotechnology

at The 2014 Pan American Materials Conference, ABM, July 21-25, Sao Paulo,

Brazil.

24) 2014 MRS Spring Meeting, San Francisco, April 20-25, 2014: Plenary Talk (in

Symposium K) on Novel Two-dimensional Multifunctional Nanostructured Materials),

Invited Talk VV on Tuning of electrical and magnetic Properties of nanostructured

oxides, and Invited Talk FFF on Holistic approach to training and mentoring of next-

generation materials scientists.

25) 2015 MRS Spring Meeting, April 6-10, Invited Talk on Defects and Interfaces in Oxide

Thin Film Heterostructures

26) 2015 MRS Fall Meeting, November 29-December 4, Invited Talk on Discovery of Q-

carbon and Direct Conversion of Carbon into Diamond

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27) 2015 SC Jain Memorial Lecture and Prize, Plenary Talk at the 2015 IWPSD

(International Workshop on Physics of Semiconductor Devices, Dec 7-10, IISc,

Bangalore, India

28) JNCASR-Cambridge University Winter School-2015 on Frontiers in Materials

Science, Dec 7-11, Bangalore, India, Plenary Talk Novel Two Dimensional

Multifunctional Materials and Discovery of Q-carbon

29) Third International Conference on Nanostructured Materials and nanocomposites,

December 12-14, 2015, Opening Plenary Talk and Session Chair

30) 2016 MRS Spring Meeting, March 28-April 1, Phoenix, Invited Talk on Discovery of

Q-carbon and Q-BN and Direct Conversion of Carbon into Diamond and h-BN into c-BN

(Invited Lecture Recorded by MRS and Paper Published in MRS Advances) .

Impact of Work

Profound impact on thin film epitaxy across the misfit scale, defects and interfaces, laser processing,

semiconductor doping and novel materials processing which led to a record three IR-100 Awards for

new materials and technologies. Narayan holds forty patents on domain matching epitaxy, defect

reduction in thin film heterostructures, new materials, and processing of semiconductor devices. His

patents on domain epitaxy (US Patents # 6955985 & 5406123) are being used to form the nucleation

or foundation layer of all the LEDs manufactured today. Narayan’s patent (US Patent # 6881983) on

quantum nanostructuring (Nano-Pocket LEDs) by thickness variation of quantum wells is used

universally to enhance internal quantum efficiency and brightness. He holds ten patents with Kopin

Corp (and Kobrite Corp), which are pivotal to their highly successful CYBER display,

nanostructured LEDs and solid state lighting and high-power device business. The Kopin Corp, MIT

spin-off and Massachusetts based multinational Corp, has licensed patents related to domain epitaxy

and new cubic ZnMgO and ZnCdO alloys from NCSU to manufacture III-nitride and II-oxide based

light emitting diodes and lasers covering the entire range of the visible spectrum. Using DME and 3-

D thin-film growth concepts (Volmer-Weber growth), Narayan invented 3-D self-assembled

nanostructures with oriented nanodots (US Patent # 7,105,118, Sept 12, 2006), which NSF hailed as

one of the breakthroughs of the year (2004). He founded Star Nanotech, Inc. to successfully

commercialize Narayan’s US Patent #7994105 for nanotech solutions to enhance fuel efficiency;

www.starnanotechnology.com) and Q-Carbon LLC (www.q-carboninc.com) has licensed twelve of

Narayan’s patents to manufacture Q-carbon, diamond, Q-BN and c-BN based products. A large

fraction of these companies have been bought by private investors.

Landmark Research Areas and Publications

Properties of Vacancies and Interstitials in MgO – Scripta Met 6, 259 (1972) and Phil Mag. 26, 1179

(1972); J. Appl. Phys 43, 4862(1972); Acta Met 21, 533(1973).

Laser Annealing of Ion Implanted Semiconductors – Appl. Phys. Lett. 32, 139 (1978) Citation Classic, and

(Invited) Science 204, 461 (1979) Citation Classic; Pulsed Laser Melting – Phil Mag 43, 1515 (1981) and

Phys. Rev. Lett. 52, 561 (1983).

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Interface Instability and Formation of Supersaturated Semiconductor Alloys – J. Appl. Phys. 52, 1289

(1981) and Appl. Phys. Lett. 41, 239 (1982).

Pulsed Laser Deposition and Processing of Thin Films – Appl. Phys. Lett. 51, 1845 (1987) and Physical

Review B41, 8843 (1990) Citation Classic, and Science 252, 416 (1991) and (Invited) International Materials

Reviews 42, 137 (1997).

Atomic Structure of Dislocations and Grain Boundaries – Phil. Mag. A71, 537 (1995); Phil Mag. A72,

297 (1995) and Phil Mag. A73, 767 (1996); J. Appl. Phys.92, 7122(2002) and Recent Papers below.

Domain Epitaxy and Thin Films – Appl. Phys. Lett. 61, 1290 (1992); J. Appl. Phys. 84, 2597 (1998); J.

Appl Phys. (Invited Review) 87, 965 (2000); J. Appl. Phys.93,278(2003) and Met and Mat Trans 36, 5

(2005)- Edward DeMille Campbell Lecture and Recent Papers below.

Novel Nanocrystalline Materials – Phys. Rev. Lett. 46, 1491 (1981); Phil Mag A 49,287(1984); Phil Mag

49, 475(1984); US Patent 4,376,755(1984); Appl. Phys. Lett. 76, 43 (2000); J. Nanoparticle Research 2,

91(2000);4,265(2002); Acta materialia 50, 3527 (2002); Acta Materialia 50, 5067(2002); Acta Materialia 50,

3995(2002); Acta Materialia 50, 4823(2002); J. Nanoscience and Nanotechnology 4, 726 (2004); J. Appl.

Phys. 89, 132502 (12006); J. Appl Phys 100, 034309 (2006) and Recent Papers below.

III-nitride and II-oxide Based Materials- Appl. Phys Lett 67, 1549(1995); J. Appl Phys. 84,2597(1998);

Appl Phys. Lett. 74, 2465(1999); J. Appl Phys, 85, 7884(1999); Solid State Comm 121, 9(2002); Appl. Phys

Lett 81,841(2002); Sold State Comm 121, 371(2002); Appl. Phys Lett 81, 3978(2002) and Recent Papers

below.

Perovskite Based Materials- J. Appl. Phys. 80,6720(1996); Appl. Phys Lett 71, 1709(1997); Appl. Phys Lett

76, 1458(2000); Appl. Phys Lett 80,4039(2002); Solid State Comm 121, 357(2002) and 121 357(2002); Appl

Phys Lett 80,1337(2002) and Recent Papers below.

Diluted Magnetic Semiconductors- Solid State Comm 121, 371 (2002); Appl. Phys Lett 88, 142503 (2006);

J. Elect Mat 35, 852 (2006); Appl. Phys Lett 88, 142511 (2006); Applied Phys Lett 84, 5255(2004); Appl

Phys Lett 87, 172502 (2005) and Recent Papers below.

Smart Materials and Transparent Conducting Oxides- J. Appl. Phys 100, 103524 (2006); J. Appl. Phys

100, 123 102 (2006); J. Appl Phys 100, 093519 (2006); J. Appl Phys 100, 033713 (2006); Appl Phys Lett 88,

032106 (2006); J. Appl Phys 97, 083539 (2005) and Recent Papers below.

Principal Technical Society Membership and Activities

Inaugural MRS Fellow; Life Member and Fellow TMS (The Materials Society) and National

Academy of Sciences, India – both limited to 100 members; Life Member and Fellow of APS;

Fellow of ASM International; Fellow of AAAS; Materials Research Society Governing Board

Councillor (1984-87); MRS Fall Meeting Co-chair (1984), MRS Long-Range Planning (1987-89);

Executive council-Electronic, Magnetic and Photonic Materials Division of TMS; DOE-National

Labs. and NSF-major facilities reviewer; TMS Awards Chair-EMPMD; Board member Kopin

(Highly Successful Advanced Materials and Display Devices Co.); Consultants at H. C. Starck, Inc.,

Advanced Ceramics, Lockheed Martin, Honeywell and Spire Corp.; Director – Division of Materials

Research, NSF (1990-92); NSF Representative to NRC Committees; NSF Chair for the Presidential

Materials (AMPP) Initiative; Member – University of Alabama Advisory Committee; Member –

Visiting Committee (School of Materials Science and Engineering) Georgia Tech.; TMS Bruce

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Chalmers Award Committee Member and Chair (2000-03); Army Research Office (ARO) Board

Member and Chairman of the Board (2002); ASM Nominating Committee Member; ASM Gold

Metal Committee Member and Chair (2001-04); International Materials Reviews Committee

Member: TMS John Bardeen Committee Member and Chair (2004-07).

Research Training and Mentoring of Students

Narayan has graduated over 70 Ph.D. students and trained 40 Postdocs who are employed in leading

companies such as IBM, INTEL, Motorola, Texas Instruments, AMD; National Labs., and

universities. Fourteen of them are in tenured and tenure-track faculty positions, six of these students

received NSF-NYI/CAREER Award, One Presidential Early CAREER (PECASE) Award, five

MRS-Best Graduate Student Medal, one TMS Hardy Gold Medal, three TMS Young Scientist

Award, one IBM Faculty Awards, EMSA and ASM Best Paper Awards, etc. Some his students have

received Fellow Honors from premier professional societies: AAAS, APS, ASM, IEEE, MRS and

ECS. In 2013-14, he graduated five PhD students who joined INTEL Corporation.

Teaching Accomplishments

Since his tenure at NCSU in 1983, Professor Narayan has developed a total of eight graduate-level

courses which are intimately connected with his research:

1. MSE 702 – Defects in Solids

2. MSE-465/565 – introduction to Nanomaterials

3. MSE 760 – Materials Science and Processing of Semiconductor Devices

4. MSE 770 – Defects, Diffusion and Ion Implantation in Semiconductors

5-6. MSE 791 A & B – Advanced Materials and Smart Structures I & II

7-8 MSE 791 J & K – Advanced Materials Processing I & II

Three of them MSE-760, MSE-702 and MSE-465/565 are taught on Distance-Education Network,

Engineering Online Network. These courses MSE-465/565 (Introduction to Nanomaterials), MSE

760 (Materials Science and Processing of Semiconductor Devices) and MSE -702 (Defects in

Solids) are very popular among NCSU students and practicing engineers in microelectronics and

Photonics industry such as IBM, INTEL, Motorola, AMD, to update their skills and finish the M.S.

degrees. Narayan pioneered Distance-Education teaching in North Carolina, starting with his first

course in 1985. The GA/Office of the President has provided a special grant as a part of the UNC E

learning Initiative to incorporate these courses into a special degree program in Photonics and

Microelectronics. Narayan also obtained the GA grant to develop MS in Nanoengineering which is

offered via Engineering Online nationally and internationally starting fall 2014 under his direction.

Publications in Archival Journals (Total over 500 papers in Journals and equal number in

Conf Proceedings; 9 Books edited, and 40 US Patents): Total Citations 25,000, h-index >79

Recent (2016-2014) Archival Journal papers

1) Multifunctional epitaxial systems on silicon substrates By: Singamaneni, Srinivasa Rao;

Prater, John Thomas; Narayan, Jagdish APPLIED PHYSICS

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REVIEWS Volume: 3 Issue: 3 Article Number: 031301 Published: SEP 2016 (One of the Most Cited Papers: Impact factor 15)

2) Wafer scale integration of reduced graphene oxide by novel laser processing at room temperature in air By: Bhaumik, Anagh; Narayan, Jagdish JOURNAL OF APPLIED

PHYSICS Volume: 120 Issue: 10 Article Number: 105304 Published: SEP 14 2016

3) Dependence of grain size and defect density on the magnetic properties of mechanically alloyed Fe90W10 powder By: Yamoah, N. K.; Koten, M. K.; Thompson, D.; J.

Narayan, JOURNAL OF APPLIED PHYSICS Volume: 120 Issue: 14 Article Number: 143903 Published: OCT 14 2016

4) Defect mediated room temperature ferromagnetism and resistance minima study in epitaxial ZnGa0.002Al0.02O transparent conducting oxide films By: Temizer, Namik K.;

Nori, Sudhakar; Kumar, D.; J. Narayan. JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 49 Issue: 34 Article Number: 345302 Published: SEP 1 2016

5) Mechanical properties of copper/bronze laminates: Role of interfaces

By: Ma, Xiaolong; Huang, Chongxiang; Moering, Jordan; J. Narayan. ACTA MATERIALIA Volume: 116 Pages: 43-52 Published: SEP 1 2016

6) Multi-frequency ferromagnetic resonance investigation of nickel nanocubes

encapsulated in diamagnetic magnesium oxide matrix, Saritha Nellutla, Sudhakar

Nori, Srinivasa R. Singamaneni, John T. Prater, Jagdish Narayan, and Alex I. Smirnov, J.

Appl. Phys 120, 223902 (2016).

7) Two-Dimensional Layered Oxide Structures Tailored by Self Assembled Layer

Stacking via Interfacial Strain By: Zhang, Wenrui; Li, Mingtao; Chen, Aiping; J.

Narayan. ACS APPLIED MATERIALS &

INTERFACES Volume: 8 Issue: 26 Pages: 16845-16851 Published: JUL 6 2016

8) Research Update: Direct conversion of amorphous carbon into diamond at ambient pressures and temperatures in air By: Narayan, Jagdish; Bhaumik, Anagh APL

MATERIALS Volume: 3 Issue: 10 Article Number: 100702 Published: OCT 2015 9) Direct Conversion of h-BN into c-BN and Formation of Epitaxial c-BN/Diamond

Heterostructures By: Narayan, Jagdish; Bhaumik, Anagh JOURNAL OF APPLIED PHYSICS 119,185302 (2016).

10) Novel synthesis and properties of pure and NV nanodiamonds and other nanostructures, : Narayan, Jagdish; Bhaumik, Anagh; Materials Res. Letters, 2016 http://dx.doi.org/10.1080/21663831.2016.1249805.

11) Novel phase of carbon, ferromagnetism, and conversion into diamond By: Narayan, Jagdish; Bhaumik, Anagh JOURNAL OF APPLIED PHYSICS Volume: 118 Issue: 21 Article Number: 215303 Published: DEC 7 2015

12) Research Update: Direct conversion of h-BN into pure c-BN at ambient temperatures and pressures in air By: Narayan, Jagdish; Bhaumik, Anagh, APL

MATERIALS Volume: 4 Issue: 2 Article Number: 020701 Published: FEB 2016 13) DISCOVERY OF Q-PHASES AND DIRECT CONVERSION OF CARBON INTO DIAMOND

AND h-BN INTO c-BN By: Narayan, Jagdish; Bhaumik, Anagh; Narayan, Roger ADVANCED

MATERIALS & PROCESSES Volume: 174 Issue: 3 Pages: 24-28 Published: MAR 2016

14) Q-carbon discovery and formation of single-crystal diamond and nano- and microneedles and thin films by: Narayan, Jagdish; Bhaumik, Anagh;

Materials Research Letters 2016; http://dx.doi.org/10.1080/21663931.2015.1126865.

15) Fundamental Discovery of New Phases and Direct Conversion of Carbon into Diamond and hBN into cBN and Properties By: Narayan, Jagdish; Bhaumik, Anagh

METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE Volume: 47A Issue: 4 Pages: 1481-1498 Published: APR 2016

16) Epitaxial growth of rutile TiO2 thin films by oxidation of TiN/Si{100} heterostructure

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By: Moatti, A.; Bayati, R.; Narayan, J., ACTA MATERIALIA Volume: 103 Pages: 502-511 Published: JAN 15 2016

17) Diamagnetism to ferromagnetism in Sr-substituted epitaxial BaTiO3 thin films By: Singamaneni, Srinivasa Rao; Punugupati, Sandhyarani; Prater, John T.; Narayan, J. APPLIED PHYSICS LETTERS Volume: 108 Issue: 14, 142404 (2016).

18) Stacking-fault energy effect on zero-strain deformation twinning in nanocrystalline Cu-Zn alloys, By: Ma, X. L.; Zhou, H.; Narayan, J.; et al., SCRIPTA MATERIALIA Volume: 109 Pages: 89-93 Published: DEC 2015

19) Strain induced room temperature ferromagnetism in epitaxial magnesium oxide thin films, By: Jin, Zhenghe; Nori, Sudhakar; Lee, Yi-Fang; et al., JOURNAL OF APPLIED PHYSICS Volume: 118 Issue: 16 Article Number: 165309 Published: OCT 28 2015

20) Magnetic exchange coupling in bilayers of two epitaxial ferromagnetic oxides,

By: Singamaneni, Srinivasa Rao; Prater, John T.; Narayan, Jagdish, CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE Volume: 19 Issue: 5 Pages: 301-304 Published: OCT 2015

21) Microstructure and transport properties of epitaxial topological insulator Bi2Se3 thin films grown on MgO (100), Cr2O3 (0001), and Al2O3 (0001) templates, By: Lee, Y. F.; Kumar, R.; Hunte, F.; et al. JOURNAL OF APPLIED PHYSICS Volume: 118 Issue: 12 Article Number: 125309 Published: SEP 28 2015

22) Fabrication of epitaxial Cu3Ge on sapphire with controlled crystallinity and planar defects, By: Wu, F.; Zheng, J. K.; Cai, W.; et al., JOURNAL OF ALLOYS AND COMPOUNDS Volume: 641 Pages: 238-243 Published: AUG 25 2015

23) Control of intrinsic defects and magnetotransport properties of Bi2Se3/c-sapphire epitaxial heterostructures, By: Lee, Y. F.; Kumar, R.; Hunte, F.; et al., ACTA MATERIALIA Volume: 95 Pages: 57-64 Published: AUG 15 2015

24) Multifunctional heterostructures integrated on Si (100), By: Singamaneni, Srinivasa Rao;

Narayan, Jay; Prater, John T., EMERGING MATERIALS RESEARCH Volume: 4 Issue: 1 Pages: 50-70 Published: JUN 2015

25) Room temperature ferromagnetism in epitaxial Cr2O3 thin films grown on r-sapphire,

By: Punugupati, Sandhyarani; Narayan, Jagdish; Hunte, Frank, JOURNAL OF APPLIED PHYSICS Volume: 117 Issue: 19 Article Number: 193907 Published: MAY 21 2015

26) Complete vertical M-H loop shift in La0.7Sr0.3MnO3/SrRuO3 thin film heterostructures, By: Singamaneni, Srinivasa Rao; Fan, Wu; Prater, J. T.; et al., JOURNAL OF

APPLIED PHYSICS Volume: 117 Issue: 17 Article Number: 17B711 Published: MAY 7 2015

27) Ferroelectric and magnetic properties of multiferroic BiFeO3-La0.7Sr0.3MnO3 heterostructures integrated with Si (100), By: Singamaneni, Srinivasa Rao; Prater, J. T.;

Nori, S.; et al., JOURNAL OF APPLIED PHYSICS Volume: 117 Issue: 17 Article Number: 17D908 Published: MAY 7 2015

28) Dependence of Semiconductor to Metal Transition of VO2(011)/NiO{100}/MgO{100}/TiN{100}/Si{100} Heterostructures on Thin Film Epitaxy and Nature of Strain, By: Bayati, Reza; Molaei, Roya; Wu, Fan; et al., JOURNAL OF THE AMERICAN CERAMIC SOCIETY Volume: 98 Issue: 4 Pages: 1201-1208 Published: APR 2015

29) Alloying effect on grain-size dependent deformation twinning in nanocrystalline Cu-Zn alloys, By: Ma, X. L.; Xu, W. Z.; Zhou, H.; et al., PHILOSOPHICAL MAGAZINE Volume: 95 Issue: 3 Pages: 301-310 Published: JAN 22 2015

30) Integration and structural analysis of strain relaxed bi-epitaxial zinc oxide (0001) thin

film with silicon(100) using titanium nitride buffer layer, P. Gupta, J. Narayan, , Journal

of Applied Physics 115, 043513 (2014). 31) Two-dimensional metamaterials for epitaxial heterostructures

By: Zhou, H.; Chisholm, M. F.; Gupta, A.; J. Narayan CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE Volume: 18 Issue: 1 Special Issue: SI Pages: 46-52 Published: FEB 2014

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32) Ga and Al doped Zinc oxide thin films for transparent conducting oxide applications:

Structure-property correlations, N. K. Temizer, Sudhakar Nori and J. Narayan, Journal

of Applied Physics 115, 023705 (2014).

33) Modification of properties of yttria stabilized zirconia epitaxial thin films, R. Bayati, R.

Molaei, A. Richmond, J. Narayan, ACS Applied Materials and Interfaces 6, 22316

(2014).

34) Magnetic properties of BaTiO3/La0.7Sr0.3MnO3 thin films integrated on Si(100), S.

Rao, F. Wu, JT Prater, J. Narayan, J. Appl. Phys 116, 224104 (2014).

35) Tunable electronic structure in dilute magnetic semiconductor Sr3SnO/c-YSZ/Si(001)

epitaxial heterostructures, YF Lee, J. Narayan and J. Schwartz, J. Appl. Phys. 116,

164903 (2014).

36) Strain induced ferromagnetism in epitaxial Cr2O3 thin films integrated on Si(001), S.

Punugupati, J. Narayan, and F. Hunte, Appl. Phys. Lett. 105, 132401 (2014).

37) Thermal misfit strain relaxation in Ge/(001)Si heterostructures, J. Bharathan, H. Zhou, J.

Narayan, J. Electronic Materials 43, 3196 (2014).

38) Nanosecond laser switching of surface wettability and epitaxial integration of c-axis ZnO

thin films with Si(111) substrates, R. Molaei, M.R. Bayati, H.M. Alipour, N.A. Estrich,

and J. Narayan, Journal of Physics: Condensed Matter. 26, 015004 (2014).

39) Integration of epitaxial permalloy on Si(100) through domain matching epitaxy

paradigm, S.S. Rao, J.T. Prater, F. Wu, Sudhakar Nori, D. Kumar, J. Narayan Curr.

Opin. Solid State Mater. Sci. 18, 1 (2014).

40) Positive exchange bias in epitaxial permalloy/MgO integrated with Si (100), S.S. Rao,

J.T. Prater, F. Wu, Sudhakar Nori, D. Kumar, L. Yue, S.-H. Liou and J. Narayan, Curr.

Opin. Solid State Mater. Sci. (in press) (2014).

41) Oxygen vacancy enhanced room temperature ferromagnetism in Sr3SnO/c-YSZ/Si (001)

heterostructures, Y lee, F. Wu, J. Narayan, J. Schwartz, MRS Communications 4, 7

(2014).

42) A microstructural approach toward the effect of thickness on semiconductor-to-metal

transition of VO2 epitaxial layers, R. Molaei, R. Bayati, F. Wu, and J. Narayan, J. Appl.

Phys 115, 164311(2014).

43) Oxygen vacancy enhanced toom-temperature ferromagnetism in Sr3SnO/c-YSZ/Si(001)

heterostructures, Y. F. Lee, F. Wu, J. Narayan and J. Schwartz, MRS Communications

4(1) 7 (2014).

44) Structural and resistance switching properties of epitaxial Pt/ZnO/TiN/Si(100)

heterostructures, S. Punigupati, N. K. Temizer, J. Narayan, and F. Hunte, J. Appl. Phys.

115 ,234501(2014).

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45) Evidence for topological surface states in epitaxial Bi2Se3 thin film grown by pulsed

laser deposition through magneto-transport measurements, Y. F. Lee.., J. Narayan and J.

Schwartz, COSSMS 18, 279(2014).

46) Ferroelectric and ferromagnetic properties in BaTiO3 thin films on Si(100), S. S.

Rao,..J.T. Prater and J. Narayan, J. Appl. Phys. 116, 094103 (2014).

47) Laser annealing induced ferromagnetism in SrTiO3 single crystals, S. S. Rao, Y. F. Lee,

J. T. Prater, A. Smirnov and J. Narayan, Applied Physics Letters 105, 042403(2014).

48) Effect of substrate temperature on the physical and corrosion properties of TiN

nanowires grown by pulsed laser deposition, S. Gbordzoe, R. Kotoka, E. Craven, D.

Kumar F. Wu and J. Narayan, J. Appl. Phys. 116, 064310 (2014).

49) Tuning exchange bias in epitaxial Ni/MgO/TiN heterostructures integrated on Si(100),

Fan Wu, S. S. Rao, J. T. Prater, Y. T. Zhu and J. Narayan, COSSMS (2014).

Archival Journal Papers 2001-2013 50) Diamagnetic to ferromagnetic switching in VO2 epitaxial films by nanosecond excimer

laser treatment, R. Molaei, M.R. Bayati, Sudhakar Nori, D. Kumar, J.T. Prater and J.

Narayan, Applied Physics Letters 103, 252109 (2013).

51) Interface Magnetism in Epitaxial BiFeO3‑La0.7Sr0.3MnO3 Heterostructures Integrated on

Si(100), S. S. Rao, J. T. Prater, Fan Wu, C. T. Shelton, J.-P. Maria, and J. Narayan;

Nano Letters 13, 5814 (2013).

52) Correlation between Structure and Semiconductor to Metal Transition Characteristics of

VO2/TiO2/sapphire Thin Film Heterostructures, M.R. Bayati, R. Molaei, F. Wu, J.D.

Budai, Y. Liu, R.J. Narayan, .F. Wu, et al., Acta Materialia 61, 7805 (2013).

53) Crystallographic characteristics and p-type to n-type transition in epitaxial NiO thin film,

R. Molaei, M.R. Bayati, and J. Narayan, , Crystal Growth and Design 13, 5459 (2013).

54) Grain size effect on twin density in as-deposited nanocrystalline Cu film, F. Wu, Y.T.

Zhu and J. Narayan, Philosophical Magazine, 93, 4355 (2013)

55) Twin intersection mechanisms in nanocrystalline fcc metals, F. Wu, H.M. Wen, E.J.

Lavernia, J. Narayan, Y.T. Zhu, Materials Science and Engineering: A 585, 292 (2013).

56) Research Updates: Epitaxial strain relaxation and associated interfacial reconstructions:

The driving force for creating new structures with integrated functionality, Y.Y. Zhu,

A.P. Chen, H. Zhou, W. R. Zhang, J. Narayan, J.L. MacManus-Driscoll, Q. Jia, H.Wang,

APL Materials 1, 050702 (2013).

57) Controlled epitaxial growth of bcc and fcc Cu on MgO for integration on Si, F. Wu and

J. Narayan, Crystal Growth & Design, 13, 5018 (2013).

58) Defect Characterization in Ge/(001)Si Epitaxial Films Grown by Reduced-Pressure

Chemical Vapor Deposition, J. Bharathan, J. Narayan, G. Rozgonyi, G. Bulman, J.

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Electronic Materials 42, 2888 (2013).

59) Epitaxial integration of dilute magnetic semiconductor Sr3SnO with Si (001), Y.F.

Lee, F. Wu, R. Kumar, F. Hunte, J. Schwartz, and J. Narayan, Appl. Phys. Lett. 103,

112101 (2013).

60) Field-assisted selective-melt sintering: a novel approach to high-density ceramics, J.

Narayan, MRS Commincations 3, 139 (2013).

61) Selective-Melt Sintering Brings Speed and Efficiency to Creating High-Density

Ceramics, J. Narayan, Advanced Materials & Processes 171, 29 (2013).

62) Role of substrate crystallographic characteristics on structure and properties of rutile

TiO2 epilayers, M.R. Bayati, R. Molaei, J.D. Budai, R.J. Narayan and J. Narayan,

Journal of Applied Physics 114, 044314 (2013).

63) FRONTIERS IN THIN FILM EPITAXY AND NANOSTRUCTURED MATERIALS

Introduction, J. Narayan, J. Schwartz, A. Goyal, H. Wang, S. Jin, X. Liao, Journal.

Materials Research 28, 1625 (2013).

64) Low-temperature processing and control of structure and properties of TiO2/c-sapphire

epitaxial heterostructures, M.R. Bayati, S. Joshi, R.J. Narayan and J. Narayan, J.

Materials Research 28, 1669 (2013).

65) Deposition and characterization of nanostructured Cu2O thin-film for potential

photovoltaic applications, N. Gupta, R Singh, F. Wu, J. Narayan, et al., Journal of

Materials Research 28, 1740 (2013).

66) A new mechanism for field-assisted processing and flash sintering of materials, J.

Narayan, Scripta Materialia 69, 107 (2013).

67) Grain size effect on deformation twinning and detwinning, Y.T. Zhu, X. Liao, X. Wu

and J. Narayan, Journal of Materials Research 48, 4467 (2013).

68) Enhanced photocatalytic efficiency in zirconia buffered n-NiO/p-NiO single crystalline

heterostructures by nanosecond laser treatment, R. Molaei, M.R. Bayati, H.M. Alipour,

S. Nori, and J. Narayan, Journal of Applied Physics 113, 233708 (2013).

69) Recent progress in thin film epitaxy across the misfit scale (2011 Acta Gold Medal

Paper), J. Narayan, Acta Materialia 61, 2703 (2013).

70) Misfit accommodation in oxide thin film heterostructures, S.J. Pennycook, H. Zhou,M.F.

Chisholm, A.Y. Borisevich, M. Varela, J. Gazquez, T.J. Pennycook and J. Narayan, Acta

Materialia 61, 2725 (2013).

71) In situ X-ray microdiffraction studies inside individual VO2 microcrystals, J.D. Budai,

A. Tselev, J.Z. Tischler, E. Strelcov, A. Kolmakov, W.J. Liu, A. Gupta and J. Narayan,

Acta Materialia 61, 2751 (2013).

72) Ion-irradiation-induced ferromagnetism in undoped ZnO thin films, S. Mal, S. Nori, J.

Narayan, J.T. Prater,D.K. Avasthi, Acta Materialia 61, 2763 (2013).

73) Grain growth model for electric field-assisted processing and flash sintering of materials,

J. Narayan, Scripta Materialia 68, 785 (2013).

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74) Thin-Film Epitaxy and Enhancement of Photocatalytic Activity of Anatase/Zirconia

Heterostructures by Nanosecond Excimer Laser Treatment, M.R. Bayati, H.M. Alipour,

S. Joshi, R. Molaei, R.J. Narayan, J. Narayan and S.T. Misture, Journal of Physical

Chemistry C 117, 7138 (2013).

75) Controlled epitaxial integration of polar ZnO(0001) with Si(001), R. Molaei, M.R.

Bayati, H.M. Alipour, and J. Narayan, Applied Physics Letters 102, 101602 (2013).

76) A New Class of Room-Temperature Multiferroic Thin Films with Bismuth-Based

Supercell Structure, A.P. Chen, H.H. Zhou, Z. Bi,Y.Y. Zhu,.. J. Narayan et al. Advanced

Materials 25, 1028 (2013).

77) Ultrafast switching in wetting properties of TiO2/YSZ/Si(001) epitaxial heterostructures

induced by laser irradiation, M.R. Bayati, S. Joshi, R. Molaei, R.J. Narayan and J.

Narayan, Journal of Applied Physics 113, 063706 (2013).

78) Poisson Ratio of Epitaxial Germanium Films Grown on Silicon ,J. Bharathan, J.

Narayan, G. Rozgonyi, G. Bulman, J. Electronic Materials 42, 40 (2013).

79) Macroscopic strain caused by twinning in multilayer Cu/Ta thin films, F. Wu, Y.T. Zhu,

J. Narayan, Materials Research letters, 2 63 (2013).

80) Epitaxial integration of topological insulator SrSnO with c-YSZ/Si(001), Y. lee, F. Wu,

J. Narayan, et al., Applied Physics Letters, 103 112101 (2013).

81) Ultrafast switching in wetting properties of TiO2/YSZ/Si(001) epitaxial heterostructures induced by

laser irradiation: Author(s): Bayati, M. R.; Joshi, S.; Molaei, R.; et al.: Source: JOURNAL OF APPLIED

PHYSICS Volume: 113 Issue: 6 Article Number: 063706 DOI: 10.1063/1.4790327, FEB 14 2013

82) Poisson Ratio of Epitaxial Germanium Films Grown on Silicon: Author(s): Bharathan,

Jayesh; Narayan, Jagdish; Rozgonyi, George; et al.: Source: JOURNAL OF ELECTRONIC

MATERIALS Volume: 42 Issue: 1 Pages: 40-46 DOI: 10.1007/s11664-012-2337-6 Published: JAN

2013

83) Defect mediated reversible ferromagnetism in Co and Mn doped zinc oxide epitaxial films:

Author(s): Mal, Siddhartha; Nori, Sudhakar; Mula, Suhrit; et al.: Source: JOURNAL OF APPLIED

PHYSICS Volume: 112 Issue: 11 Article

Number: 113917 DOI: 10.1063/1.4768721 Published: DEC 1 2012

84) Thin film epitaxy and near bulk semiconductor to metal transition in VO2/NiO/YSZ/Si(001)

heterostructures: Author(s): Molaei, Roya; Bayati, Mohammad Reza; Narayan, Jagdish:

Source: JOURNAL OF MATERIALS RESEARCH Volume: 27 Issue: 24 Pages: 3103-

3109 DOI: 10.1557/jmr.2012.374: DEC 2012

85) Defect mediated photocatalytic decomposition of 4-chlorophenol on epitaxial rutile thin films under

visible and UV illumination: Author(s): Bayati, M. R.; Ding, J.; Lee, Y. F.; et al.: Source: JOURNAL OF

PHYSICS-CONDENSED MATTER Volume: 24 Issue: 39 Article

Number: 395005 DOI: 10.1088/0953-8984/24/39/395005 Published: OCT 3 2012

86) Nanoscience to nanotechnology to manufacturing transition: Author(s): Narayan, Jagdish:

Source: INTERNATIONAL JOURNAL OF NANOTECHNOLOGY Volume: 9 Issue: 10-12 Special

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Issue: SI Pages: 914-941 DOI: 10.1504/IJNT.2012.049456 Published: 2012

1. Controlled p-type to n-type conductivity transformation in NiO thin films by ultraviolet-laser

irradiation

Author(s): Gupta Pranav; Dutta Titas; Mal Siddhartha; J. Narayan et al.

Source: JOURNAL OF APPLIED PHYSICS Volume: 111 Issue: 1 Article Number: 013706 DOI:

10.1063/1.3671412 Published: JAN 1 2012

2. Defects in room-temperature ferromagnetic Cu-doped ZnO films probed by x-ray absorption

spectroscopy Author(s): Ma, Q.; Prater, J. T.; Sudakar, C.; et al.; Source: JOURNAL OF PHYSICS-

CONDENSED MATTER Volume: 24 Issue: 30 Article Number: 306002 DOI: 10.1088/0953-

8984/24/30/306002 Published: AUG 1 2012

3. Domain epitaxy in TiO2/alpha-Al2O3 thin film heterostructures with Ti2O3 transient layer; Author(s):

Bayati, M. R.; Molaei, R.; Narayan, J.; et al,Source: APPLIED PHYSICS LETTERS Volume: 100 Issue: 25

Article Number: 251606 DOI: 10.1063/1.4729937 Published: JUN 18 2012

4. Structure-property correlation in epitaxial (200) rutile films on sapphire substrates Author(s): Bayati, M.

R.; Joshi, Sh; Molaei, R.; et al.; Source: JOURNAL OF SOLID STATE CHEMISTRY Volume: 187 Pages:

231-237 DOI: 10.1016/j.jssc.2012.01.031 Published: MAR 2012

5. Thin film epitaxy and magnetic properties of STO/TiN buffered ZnO on Si(0 0 1) substrates

Author(s): Mal Siddhartha; Yang Tsung-Han; Gupta P.; J. Narayan et al.

Source: ACTA MATERIALIA Volume: 60 Issue: 1 Pages: 457-457 DOI: 10.1016/j.actamat.2011.08.010

Published: JAN 2012

6. Role of interfacial transition layers in VO2/Al2O3 heterostructures

Author(s): Zhou H.; Chisholm M. F.; Yang Tsung-Han; et al.

Source: JOURNAL OF APPLIED PHYSICS Volume: 110 Issue: 7 Article Number: 073515 DOI:

10.1063/1.3642980 Published: OCT 1 2011

7. d(0) Ferromagnetism in undoped ZnO thin films: Effect of thickness, interface and oxygen annealing

Author(s): Mal Siddhartha; Yang Tsung-Han; Jin Chunming; et al.

Source: SCRIPTA MATERIALIA Volume: 65 Issue: 12 Pages: 1061-1064 DOI:

10.1016/j.scriptamat.2011.09.016 Published: DEC 2011

8. Intrinsic Room-Temperature Ferromagnetic Properties of Ni-Doped ZnO Thin Films

Author(s): Jin C.; Aggarwal R.; Wei W.; et al.

Source: METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND

MATERIALS SCIENCE Volume: 42A Issue: 11 Pages: 3250-3254 DOI: 10.1007/s11661-010-0479-9

Published: NOV 2011

9. VO2 Thin Films: Defect Mediation in Room Temperature Ferromagnetic Switching Characteristics

Author(s): Nori Sudhakar; Yang T. -H.; Narayan Jagdish

Source: JOM Volume: 63 Issue: 10 Pages: 29-33 Published: OCT 2011

10. Control of room-temperature defect-mediated ferromagnetism in VO(2) films

Author(s): Yang Tsung-Han; Nori Sudhakar; Mal Siddhartha; et al.

Source: ACTA MATERIALIA Volume: 59 Issue: 16 Pages: 6362-6368 DOI:

10.1016/j.actamat.2011.06.047 Published: SEP 2011

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11. Defect-mediated ferromagnetism and controlled switching characteristics in ZnO

Author(s): Mal Siddhartha; Nori Sudhakar; Narayan Jagdish; et al.

Source: JOURNAL OF MATERIALS RESEARCH Volume: 26 Issue: 10 Pages: 1298-1308 DOI:

10.1557/jmr.2011.74 Published: MAY 2011

12. Thin film epitaxy and magnetic properties of STO/TiN buffered ZnO on Si(001) substrates

Author(s): Mal Siddhartha; Yang Tsung-Han; Gupta P.; et al.

Source: ACTA MATERIALIA Volume: 59 Issue: 6 Pages: 2526-2534 DOI:

10.1016/j.actamat.2010.12.058 Published: APR 2011

13. Epitaxial VO(2)/Cr(2)O(3)/sapphire heterostructure for multifunctional applications

Author(s): Yang Tsung-Han; Mal S.; Jin C.; et al.

Source: APPLIED PHYSICS LETTERS Volume: 98 Issue: 2 Article Number: 022105 DOI:

10.1063/1.3541649 Published: JAN 10 2011

14. SELF-ASSEMBLY AND DIRECTED ASSEMBLY OF ADVANCED MATERIALS Introduction

Author(s): Goyal Amit; Narayan Jagdish; Lin Qinghuang

Source: JOURNAL OF MATERIALS RESEARCH Volume: 26 Issue: 2 Pages: 109-110 DOI:

10.1557/jmr.2010.103 Published: JAN 2011

15. Dislocation-twin interactions in nanocrystalline fcc metals

Author(s): Zhu Y. T.; Wu X. L.; Liao X. Z.; et al.

Source: ACTA MATERIALIA Volume: 59 Issue: 2 Pages: 812-821 DOI: 10.1016/j.actamat.2010.10.028

Published: JAN 2011

16. Effect of Li doping in NiO thin films on its transparent and conducting properties and its application in

heteroepitaxial p-n junctions

Author(s): Dutta Titas; Gupta P.; Gupta A.; et al.

Source: JOURNAL OF APPLIED PHYSICS Volume: 108 Issue: 8 Article Number: 083715 DOI:

10.1063/1.3499276 Published: OCT 15 2010

17. Near bulk semiconductor to metal transition in epitaxial VO(2) thin films

Author(s): Gupta Alok; Narayan Jagdish; Dutta Titas

Source: APPLIED PHYSICS LETTERS Volume: 97 Issue: 15 Article Number: 151912 DOI:

10.1063/1.3503632 Published: OCT 11 2010

18. Reversible room temperature ferromagnetism in undoped zinc oxide: Correlation between defects and

physical properties

Author(s): Mal Siddhartha; Nori Sudhakar; Jin Chunming; et al.

Source: JOURNAL OF APPLIED PHYSICS Volume: 108 Issue: 7 Article Number: 073510 DOI:

10.1063/1.3491037 Published: OCT 1 2010

19. Atomic structure of misfit dislocations in nonpolar ZnO/Al(2)O(3) heterostructures

Author(s): Zhou H.; Chisholm M. F.; Pant P.; et al.

Source: APPLIED PHYSICS LETTERS Volume: 97 Issue: 12 Article Number: 121914 DOI:

10.1063/1.3489687 Published: SEP 20 2010

20. Defect-mediated room temperature ferromagnetism in zinc oxide

Author(s): Mal Siddhartha; Narayan J.; Nori Sudhakar; et al.

Source: SOLID STATE COMMUNICATIONS Volume: 150 Issue: 35-36 Pages: 1660-1664 DOI:

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10.1016/j.ssc.2010.06.030 Published: SEP 2010

21. Role of twin boundaries in semiconductor to metal transition characteristics of VO(2) films

Author(s): Yang Tsung-Han; Jin Chunming; Zhou Honghui; et al.

Source: APPLIED PHYSICS LETTERS Volume: 97 Issue: 7 Article Number: 072101 DOI:

10.1063/1.3481075 Published: AUG 16 2010

22. Mott transition in Ga-doped Mg(x)Zn(1-x)O: A direct observation

Author(s): Wei Wei; Nori Sudhakar; Jin Chunming; et al.

Source: MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE

MATERIALS Volume: 171 Issue: 1-3 Pages: 90-92 DOI: 10.1016/j.mseb.2010.03.078 Published: JUL

25 2010

23. Semipolar r-plane ZnO films on Si(100) substrates: Thin film epitaxy and optical properties

Author(s): Aggarwal Ravi; Zhou Honghui; Jin Chunming; et al.

Source: JOURNAL OF APPLIED PHYSICS Volume: 107 Issue: 11 Article Number: 113530 DOI:

10.1063/1.3406260 Published: JUN 1 2010

24. High work function (p-type NiO(1+x))/Zn(0.95)Ga(0.05)O heterostructures for transparent conducting

oxides

Author(s): Dutta Titas; Gupta Pranav; Gupta Alok; et al.

Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 43 Issue: 10 Article Number: 105301

DOI: 10.1088/0022-3727/43/10/105301 Published: MAR 17 2010

25. On growth of epitaxial vanadium oxide thin film on sapphire (0001)

Author(s): Yang Tsung-Han; Jin Chunming; Aggarwal Ravi; et al.

Source: JOURNAL OF MATERIALS RESEARCH Volume: 25 Issue: 3 Pages: 422-426 DOI:

10.1557/JMR.2010.0059 Published: MAR 2010

26. Semiconductor-metal transition characteristics of VO(2) thin films grown on c- and r-sapphire

substrates

Author(s): Yang Tsung-Han; Aggarwal Ravi; Gupta Alok; et al.

Source: JOURNAL OF APPLIED PHYSICS Volume: 107 Issue: 5 Article Number: 053514 DOI:

10.1063/1.3327241 Published: MAR 1 2010

27. Nonpolar ZnO film growth and mechanism for anisotropic in-plane strain relaxation

Author(s): Pant P.; Budai J. D.; Narayan J.

Source: ACTA MATERIALIA Volume: 58 Issue: 3 Pages: 1097-1103 DOI:

10.1016/j.actamat.2009.10.026 Published: FEB 2010

28. Optical and electrical properties of gallium-doped Mg(x)Zn(1-x)O

Author(s): Wei Wei; Jin Chunming; Narayan Jagdish; et al.

Source: JOURNAL OF APPLIED PHYSICS Volume: 107 Issue: 1 Article Number: 013510 DOI:

10.1063/1.3271415 Published: JAN 1 2010

29. Effect of annealing on atomic ordering of amorphous ZrTaTiNbSi alloy

Author(s): Yang Tsung-Han; Huang Rong-Tang; Wu Cheng-An; et al.

Source: APPLIED PHYSICS LETTERS Volume: 95 Issue: 24 Article Number: 241905 DOI:

10.1063/1.3273387 Published: DEC 14 2009

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30. Optical and electrical properties of bandgap engineered gallium-doped Mg(x)Zn(1-x)O films

Author(s): Wei Wei; Jin Chunming; Narayan Jagdish; et al.

Source: SOLID STATE COMMUNICATIONS Volume: 149 Issue: 39-40 Pages: 1670-1673 DOI:

10.1016/j.ssc.2009.06.021 Published: OCT 2009

31. Semiconductor to metal transition characteristics of VO(2) thin films grown epitaxially on Si (001)

Author(s): Gupta A.; Aggarwal R.; Gupta P.; et al.

Source: APPLIED PHYSICS LETTERS Volume: 95 Issue: 11 Article Number: 111915 DOI:

10.1063/1.3232241 Published: SEP 14 2009

32. Defect-mediated room temperature ferromagnetism in vanadium dioxide thin films

Author(s): Yang Tsung-Han; Nori Sudhakar; Zhou Honghui; et al.

Source: APPLIED PHYSICS LETTERS Volume: 95 Issue: 10 Article Number: 102506 DOI:

10.1063/1.3224202 Published: SEP 7 2009

33. Thin film epitaxy and structure property correlations for non-polar ZnO films

Author(s): Pant P.; Budai J. D.; Aggarwal R.; et al.

Source: ACTA MATERIALIA Volume: 57 Issue: 15 Pages: 4426-4431 DOI:

10.1016/j.actamat.2009.05.031 Published: SEP 2009

34. Raman studies of GaN/sapphire thin film heterostructures

Author(s): Hushur Anwar; Manghnani Murli H.; Narayan Jagdish

Source: JOURNAL OF APPLIED PHYSICS Volume: 106 Issue: 5 Article Number: 054317 DOI:

10.1063/1.3213370 Published: SEP 1 2009

35. Formation of single and multiple deformation twins in nanocrystalline fcc metals

Author(s): Zhu Y. T.; Narayan J.; Hirth J. P.; et al.

Source: ACTA MATERIALIA Volume: 57 Issue: 13 Pages: 3763-3770 DOI:

10.1016/j.actamat.2009.04.020 Published: AUG 2009

36. Twinning partial multiplication at grain boundary in nanocrystalline fcc metals

Author(s): Zhu Y. T.; Wu X. L.; Liao X. Z.; et al.

Source: APPLIED PHYSICS LETTERS Volume: 95 Issue: 3 Article Number: 031909 DOI:

10.1063/1.3187539 Published: JUL 20 2009

37. Magnetic Properties of Self-Assembled Ni Nanoparticles in Two Dimensional Structures

Author(s): Gupta A.; Narayan J.; Kumar Dhananjay

Source: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY Volume: 9 Issue: 6 Pages: 3993-

3996 DOI: 10.1166/jnn.2009.214 Published: JUN 2009

38. The synthesis and magnetic properties of a nanostructured Ni-MgO system

Author(s): Narayan J.; Nori Sudhakar; Ramachandran S.; et al.

Source: JOM Volume: 61 Issue: 6 Pages: 76-81 DOI: 10.1007/s11837-009-0093-8 Published: JUN 2009

39. Structural characterization of two-step growth of epitaxial ZnO films on sapphire substrates at low

temperatures

Author(s): Pant P.; Budai J. D.; Aggarwal R.; et al.

Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 42 Issue: 10 Article Number: 105409

DOI: 10.1088/0022-3727/42/10/105409 Published: MAY 21 2009

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40. Magnetic properties and their dependence on deposition parameters of Co/Al(2)O(3) multilayers grown

by pulsed laser deposition

Author(s): Aggarwal Ravi; Nori Sudhakar; Jin Chunming; et al.

Source: ACTA MATERIALIA Volume: 57 Issue: 6 Pages: 2040-2046 DOI:

10.1016/j.actamat.2009.01.018 Published: APR 2009

41. MoO(x) modified ZnGaO based transparent conducting oxides

Author(s): Dutta Titas; Gupta P.; Bhosle V.; et al.

Source: JOURNAL OF APPLIED PHYSICS Volume: 105 Issue: 5 Article Number: 053704 DOI:

10.1063/1.3078812 Published: MAR 1 2009

42. Plasma plume dynamics in magnetically assisted pulsed laser deposition

Author(s): Haverkamp J. D.; Bourham M. A.; Du S.; et al.

Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 42 Issue: 2 Article Number: 025201

DOI: 10.1088/0022-3727/42/2/025201 Published: JAN 21 2009

43. New frontier in thin film epitaxy and nanostructured materials

Author(s): Narayan Jagdish

Source: INTERNATIONAL JOURNAL OF NANOTECHNOLOGY Volume: 6 Issue: 5-6 Pages: 493-510

Published: 2009

44. Growth of biepitaxial zinc oxide thin films on silicon (100) using yttria-stabilized zirconia buffer layer

Author(s): Aggarwal Ravi; Jin Chunming; Pant Punam; et al.

Source: APPLIED PHYSICS LETTERS Volume: 93 Issue: 25 Article Number: 251905 DOI:

10.1063/1.3050529 Published: DEC 22 2008

45. Defect dependent ferromagnetism in MgO doped with Ni and Co

Author(s): Narayan J.; Nori Sudhakar; Pandya D. K.; et al.

Source: APPLIED PHYSICS LETTERS Volume: 93 Issue: 8 Article Number: 082507 DOI:

10.1063/1.2977614 Published: AUG 25 2008

46. Deformation twin formed by self-thickening, cross-slip mechanism in nanocrystalline Ni Author(s): Wu

X. L.; Narayan J.; Zhu Y. T.

Source: APPLIED PHYSICS LETTERS Volume: 93 Issue: 3 Article Number: 031910 DOI:

10.1063/1.2949685 Published: JUL 21 2008

47. Observation of room temperature ferromagnetism in Ga : ZnO: A transition metal free transparent

ferromagnetic conductor

Author(s): Bhosle V.; Narayan J.

Source: APPLIED PHYSICS LETTERS Volume: 93 Issue: 2 Article Number: 021912 DOI:

10.1063/1.2953705 Published: JUL 14 2008

48. Plasma instabilities in magnetically assisted pulsed laser deposition

Author(s): Haverkamp J. D.; Bourham M. A.; Du S.; et al.

Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 41 Issue: 11 Article Number: 115206

DOI: 10.1088/0022-3727/41/11/115206 Published: JUN 7 2008

49. Self-thickening, cross-slip deformation twinning model

Author(s): Narayan J.; Zhu Y. T.

Source: APPLIED PHYSICS LETTERS Volume: 92 Issue: 15 Article Number: 151908 DOI:

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10.1063/1.2911735 Published: APR 14 2008

50. Structure-magnetic property correlations in the epitaxial FePt system

Author(s): Trichy G. R.; Chakraborti D.; Narayan J.; et al.

Source: APPLIED PHYSICS LETTERS Volume: 92 Issue: 10 Article Number: 102504 DOI:

10.1063/1.2883933 Published: MAR 10 2008

51. Magnetic properties of epitaxial oxide heterostructures

Author(s): Ramachandran S.; Prater J. T.; Sudhakar N.; et al.

Source: SOLID STATE COMMUNICATIONS Volume: 145 Issue: 1-2 Pages: 18-22 DOI:

10.1016/j.ssc.2007.10.005 Published: JAN 2008

52. The effect of oxygen annealing on ZnO : Cu and ZnO :(Cu,Al) diluted magnetic semiconductors

Author(s): Chakraborti D.; Trichy G. R.; Prater J. T.; et al.

Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 40 Issue: 24 Pages: 7606-7613 DOI:

10.1088/0022-3727/40/24/002 Published: DEC 21 2007

53. Epitaxial FePt thin films and nanodots integrated with Si (1 0 0)

Author(s): Trichy G. R.; Chakraborti D.; Narayan J.; et al.

Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 40 Issue: 23 Pages: 7273-7280 DOI:

10.1088/0022-3727/40/23/003 Published: DEC 7 2007

54. Effect of Al doping on the magnetic and electrical properties of Zn(Cu)O based diluted magnetic

semiconductors

Author(s): Chakraborti D.; Trichy G.; Narayan J.; et al.

Source: JOURNAL OF APPLIED PHYSICS Volume: 102 Issue: 11 Article Number: 113908 DOI:

10.1063/1.2817824 Published: DEC 1 2007

55. Nanostructured GaN nucleation layer for light-emitting diodes

Author(s): Narayan J.; Pant P.; Wei W.; et al.

Source: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY Volume: 7 Issue: 8 Pages: 2719-

2725 DOI: 10.1166/jnn.2007.670 Published: AUG 2007

56. Growth, characterization, and magnetic properties of FePt nanodots on Si (100)

Author(s): Trichy G. R.; Chakraborti D.; Narayan J.; et al.

Source: JOURNAL OF APPLIED PHYSICS Volume: 102 Issue: 3 Article Number: 033901 DOI:

10.1063/1.2761832 Published: AUG 1 2007

57. Gallium-doped zinc oxide films as transparent electrodes for organic solar cell applications

Author(s): Bhosle V.; Prater J. T.; Yang Fan; et al.

Source: JOURNAL OF APPLIED PHYSICS Volume: 102 Issue: 2 Article Number: 023501 DOI:

10.1063/1.2750410 Published: JUL 15 2007

58. Anisotropic magnetic properties in [110] oriented epitaxial La0.7Sr0.3MnO3 films on (0001) sapphire

Author(s): Bhosle V.; Prater J. T.; Narayan J.

Source: JOURNAL OF APPLIED PHYSICS Volume: 102 Issue: 1 Article Number: 013527 DOI:

10.1063/1.2751118 Published: JUL 1 2007

59. Room temperature ferromagnetism and magnetotransport properties of the layered manganite system

La1.2Ba1.8Mn2-xRuxO7 (0 <= x <= 1-0)

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Author(s): Sudhakar N.; Rajeev K. P.; Tiwari A.; et al.

Source: SOLID STATE COMMUNICATIONS Volume: 142 Issue: 9 Pages: 519-524 DOI:

10.1016/j.ssc.2007.03.041 Published: JUN 2007

60. Magnetic properties of Ni-doped MgO diluted magnetic insulators

Author(s): Ramachandrana S.; Narayan J.; Prater J. T.

Source: APPLIED PHYSICS LETTERS Volume: 90 Issue: 13 Article Number: 132511 DOI:

10.1063/1.2717574 Published: MAR 26 2007

61. Epitaxial growth and magnetic properties of La0.7Sr0.3MnO3 films on (0001) sapphire

Author(s): Bhosle V.; Narayan J.

Source: APPLIED PHYSICS LETTERS Volume: 90 Issue: 10 Article Number: 101903 DOI:

10.1063/1.2472537 Published: MAR 5 2007

62. Structural, magnetic, and electron transport studies on nanocrystalline layered manganite

La1.2Ba1.8Mn2O7 system

Author(s): Sudhakar N.; Ningthoujam R. S.; Rajeev K. P.; et al.

Conference: International Symposium on Soft-Nanotechnology Location: Hokkaido Univ, Sapporo,

JAPAN Date: 2005

Source: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY Volume: 7 Issue: 3 Pages: 965-969

DOI: 10.1166/jnn.2007.405 Published: MAR 2007

63. Structural, magnetic, and electron transport studies on nanocrystalline layered manganite

La1.2Ba1.8Mn2O7 system

Author(s): Sudhakar N.; Ningthoujam R. S.; Rajeev K. P.; et al.

Source: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY Volume: 7 Issue: 3 Pages: 965-969

DOI: 10.1166/jnn.2007.405 Published: MAR 2007

64. Magnetic, electrical, and microstructural characterization of ZnO thin films codoped with Co and Cu

Author(s): Chakraborti D.; Ramachandran S.; Trichy G.; et al.

Source: JOURNAL OF APPLIED PHYSICS Volume: 101 Issue: 5 Article Number: 053918 DOI:

10.1063/1.2711082 Published: MAR 1 2007

65. Room temperature ferromagnetism in Zn1-xCuxO thin films

Author(s): Chakraborti D.; Narayan J.; Prater J. T.

Source: APPLIED PHYSICS LETTERS Volume: 90 Issue: 6 Article Number: 062504 DOI:

10.1063/1.2450652 Published: FEB 5 2007

66. Photoluminescence study of ZnO films codoped with nitrogen and tellurium

Author(s): Porter HL, Muth JF, Narayan J, et al.

Source: JOURNAL OF APPLIED PHYSICS Volume: 100 Issue: 12 Article Number: 123102 Published:

DEC 15 2006

67. Transmission electron microscopy observations on the microstructure of naturally aged Al-Mg-Si alloy

AA6022 processed with an electric field

Author(s): Conrad H, Ramachandran S, Jung K, et al.

Source: JOURNAL OF MATERIALS SCIENCE Volume: 41 Issue: 22 Pages: 7555-7561 Published:

NOV 2006

68. Phase transition and critical issues in structure-property correlations of vanadium oxide

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Author(s): Narayan J, Bhosle VM

Source: JOURNAL OF APPLIED PHYSICS Volume: 100 Issue: 10 Article Number: 103524 Published:

NOV 15 2006

69. Microstructure and electrical property correlations in Ga : ZnO transparent conducting thin films

Author(s): Bhosle V, Narayan J

Source: JOURNAL OF APPLIED PHYSICS Volume: 100 Issue: 9 Article Number: 093519 Published:

NOV 1 2006

70. Regular and high resolution transmission electron microscopy observations on the precipitates in a naturally

aged Al-Mg-Si alloy AA6022

Author(s): Ramachandran S, Jung K, Narayan J, et al.

Source: MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES

MICROSTRUCTURE AND PROCESSING Volume: 435 Pages: 693-697 Published: NOV 5 2006

71. Methods for processing tantalum films of controlled microstructures and properties

Author(s): Narayan J, Bhosle V, Tiwari A, et al.

Source: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A Volume: 24 Issue: 5 Pages: 1948-

1954 Published: SEP-OCT 2006

72. L1(0) ordered epitaxial FePt (001) thin films on TiN/Si (100) by pulsed laser deposition

Author(s): Trichy GR, Narayan J, Zhou H

Source: APPLIED PHYSICS LETTERS Volume: 89 Issue: 13 Article Number: 132502 Published: SEP 25

2006

73. Electrical properties of transparent and conducting Ga doped ZnO

Author(s): Bhosle V, Tiwari A, Narayan J

Source: JOURNAL OF APPLIED PHYSICS Volume: 100 Issue: 3 Article Number: 033713 Published:

AUG 1 2006

74. Critical size for defects in nanostructured materials

Author(s): Narayan J

Source: JOURNAL OF APPLIED PHYSICS Volume: 100 Issue: 3 Article Number: 034309 Published:

AUG 1 2006

75. Effect of oxygen annealing on Mn doped ZnO diluted magnetic semiconductors

Author(s): Ramachandran S, Narayan J, Prater JT

Source: APPLIED PHYSICS LETTERS Volume: 88 Issue: 24 Article Number: 242503 Published: JUN 12

2000

76. Growth of highly conducting epitaxial ZnO-Pt-ZnO heterostructure on alpha-Al2O3 (0001)

Author(s): Ramachandran S, Chugh A, Tiwari A, et al.

Source: JOURNAL OF CRYSTAL GROWTH Volume: 291 Issue: 1 Pages: 212-217 Published: MAY 15

2006

77. Epitaxial ZnO/Pt layered structures and ZnO-Pt nanodot composites on sapphire (0001)

Author(s): Chugh A, Ramachandran S, Tiwari A, et al.

Source: JOURNAL OF ELECTRONIC MATERIALS Volume: 35 Issue: 5 Pages: 840-845 Published:

MAY 2006

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26

78. Co-doped ZnO dilute magnetic semiconductor

Author(s): Prater JT, Ramachandran S, Tiwari A, et al.

Source: JOURNAL OF ELECTRONIC MATERIALS Volume: 35 Issue: 5 Pages: 852-856 Published:

MAY 2006

79. Ferromagnetism in Co doped CeO2: Observation of a giant magnetic moment with a high Curie

temperature

Author(s): Tiwari A, Bhosle VM, Ramachandran S, et al.

Source: APPLIED PHYSICS LETTERS Volume: 88 Issue: 14 Article Number: 142511 Published: APR 3

2006

80. Growth and observation of low-field giant magnetoresistance in La0.7Sr0.3MnO3/ZnO superlattice

structures

Author(s): Tiwari A, Narayan J

Source: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY Volume: 6 Issue: 3 Pages: 612-

617 Published: MAR 2006

81. Characteristics of nucleation layer and epitaxy in GaN/sapphire heterostructures

Author(s): Narayan J, Pant P, Chugh A, et al.

Source: JOURNAL OF APPLIED PHYSICS Volume: 99 Issue: 5 Article Number: 054313 Published:

MAR 1 2006

82. Metallic conductivity and metal-semiconductor transition in Ga-doped ZnO

Author(s): Bhosle V, Tiwari A, Narayan J

Source: APPLIED PHYSICS LETTERS Volume: 88 Issue: 3 Article Number: 032106 Published: JAN 16

2006

83. Epitaxial growth and properties of Zn1-xVxO diluted magnetic semiconductor thin films

Author(s): Ramachandran S, Tiwari A, Narayan J, et al.

Source: APPLIED PHYSICS LETTERS Volume: 87 Issue: 17 Article Number: 172502 Published: OCT

24 2005

84. Grain size softening in nanocrystalline TiN

Author(s): Conrad H, Narayan J, Jung K

Source: INTERNATIONAL JOURNAL OF REFRACTORY METALS & HARD MATERIALS Volume: 23

Issue: 4-6 Pages: 301-305 Published: 2005

85. Enhanced photoconductivity of ZnO films Co-doped with nitrogen and tellurium

Author(s): Porter HL, Cai AL, Muth JF, et al.

Source: APPLIED PHYSICS LETTERS Volume: 86 Issue: 21 Article Number: 211918 Published: MAY

23 2005

86. Epitaxial growth and properties of MoOx(2 < x < 2.75) films

Author(s): Bhosle V, Tiwari A, Narayan J

Source: JOURNAL OF APPLIED PHYSICS Volume: 97 Issue: 8 Article Number: 083539 Published:

APR 15 2005

87. Epitaxial growth of zinc oxide thin films on silicon

Author(s): Jin CM, Narayan R, Tiwari A, et al.

Source: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED

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27

TECHNOLOGY Volume: 117 Issue: 3 Pages: 348-354 Published: MAR 25 2005

88. Electrical transport in ZnO(1-delta)films: Transition from band-gap insulator to Anderson localized

insulator (vol 96, pg 3827, 2004)

Author(s): Tiwari A, Jin C, Narayan J, et al.

Source: JOURNAL OF APPLIED PHYSICS Volume: 97 Issue: 5 Article Number: 059902 Published:

MAR 1 2005

89. Effect of UV/VUV enhanced RTP on process variation and device performance of metal gate high-kappa

gate stacks for the sub-90-nm CMOS regime

Author(s): Damjanovic D, Bolla HK, Singh R, et al.

Source: IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING Volume: 18 Issue: 1

Pages: 55-62 Published: FEB 2005

90. New frontiers in thin film growth and nanomaterials

Author(s): Narayan J

Source: METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND

MATERIALS SCIENCE Volume: 36A Issue: 2 Pages: 277-294 Published: FEB 2005

91. Growth of single-phase c-axis aligned La1.2Ca1.8Mn2O7 films on SrTiO3(001)

Author(s): Tiwari A, Narayan J, Sudhakar N, et al.

Source: SOLID STATE COMMUNICATIONS Volume: 132 Issue: 12 Pages: 863-866 Published: DEC

2004

92. Origin of room-temperature ferromagnetism in cobalt-doped ZnO

Author(s): Ramachandran S, Tiwari A, Narayan J

Source: JOURNAL OF ELECTRONIC MATERIALS Volume: 33 Issue: 11 Pages: 1298-1302 Published:

NOV 2004

93. Novel methods of forming self-assembled nanostructured materials: Ni nanodots in Al2O3 and TiN

matrices

Author(s): Narayan J, Tiwari A

Source: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY Volume: 4 Issue: 7 Pages: 726-

732 Published: SEP 2004

94. Electrical transport in ZnO1-delta films: Transition from band-gap insulator to Anderson localized

insulator

Author(s): Tiwari A, Jin C, Narayan J, et al.

Source: JOURNAL OF APPLIED PHYSICS Volume: 96 Issue: 7 Pages: 3827-3830 Published: OCT 1

2004

95. The effect of interfacial layers on high-performance gate dielectrics processed by RTP-ALD

Author(s): Fakhruddin M, Singh R, Poole KF, et al.

Source: JOURNAL OF THE ELECTROCHEMICAL SOCIETY Volume: 151 Issue: 8 Pages: G507-G511

Published: 2004

96. Epitaxial GaN on Si(111): Process control of SiNx interlayer formation

Author(s): Rawdanowicz TA, Narayan J

Source: APPLIED PHYSICS LETTERS Volume: 85 Issue: 1 Pages: 133-135 Published: JUL 5 2004

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28

97. Zn0.9Co0.1O-based diluted magnetic semiconducting thin films

Author(s): Ramachandran S, Tiwari A, Narayan J

Source: APPLIED PHYSICS LETTERS Volume: 84 Issue: 25 Pages: 5255-5257 Published: JUN 21 2004

98. Pulsed laser deposition assisted novel synthesis of self-assembled magnetic nanoparticles

Author(s): Kumar D, Yarmolenko S, Sarkar J, et al.

Source: COMPOSITES PART B-ENGINEERING Volume: 35 Issue: 2 Pages: 149-155 Published: 2004

99. TaN-TiN binary alloys and superlattices as diffusion barriers for copper interconnections (vol 33, pg 1,

2004)

Author(s): Wang H, Gupta A, Tiwari A, et al.

Source: JOURNAL OF ELECTRONIC MATERIALS Volume: 33 Issue: 1 Pages: L5-L5 Published: JAN

2004

100. Role of self-assembled gold nanodots in improving the electrical and optical characteristics of zinc oxide

films

Author(s): Tiwari A, Chugh A, Jin C, et al.

Source: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY Volume: 3 Issue: 5 Pages: 368-

371 Published: OCT 2003

101. TaN-TiN binary alloys and superlattices as diffusion barriers for copper interconnects

Author(s): Wang H, Gupta A, Tiwari A, et al.

Source: JOURNAL OF ELECTRONIC MATERIALS Volume: 32 Issue: 10 Pages: 994-999 Published:

OCT 2003

102. Growth and characteristics of TaN/TiN superlattice structures

Author(s): Wang H, Zhang X, Gupta A, et al.

Source: APPLIED PHYSICS LETTERS Volume: 83 Issue: 15 Pages: 3072-3074 Published: OCT 13

2003

103. Formation of self-assembled epitaxial nickel nanostructures

Author(s): Zhou H, Kumar D, Kvit A, et al.

Source: JOURNAL OF APPLIED PHYSICS Volume: 94 Issue: 8 Pages: 4841-4846 Published: OCT 15

2003

104. A novel technique for making self-encapsulated and self-aligned copper films

Author(s): Chugh A, Tiwari A, Kvit A, et al.

Source: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED

TECHNOLOGY Volume: 103 Issue: 1 Pages: 45-48 Published: SEP 25 2003

105. Rectifying electrical characteristics of La0.7Sr0.3MnO3/ZnO heterostructure

Author(s): Tiwari A, Jin C, Kumar D, et al.

Source: APPLIED PHYSICS LETTERS Volume: 83 Issue: 9 Pages: 1773-1775 Published: SEP 1 2003

106. Synthesis of bulk nanostructured Zn by combinations of cryomilling and powder consolidation by room

temperature milling: optimizing mechanical properties

Author(s): Zhu XK, Zhang X, Wang H, et al.

Source: SCRIPTA MATERIALIA Volume: 49 Issue: 5 Pages: 429-433 Published: SEP 2003

107. Role of silver addition in the synthesis of high critical current density MgB2 bulk superconductors

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29

Author(s): Kumar D, Pennycook SJ, Narayan J, et al.

Source: SUPERCONDUCTOR SCIENCE & TECHNOLOGY Volume: 16 Issue: 4 Pages: 455-458

Published: APR 2003

108. Effect of microstructure on diffusion of copper in TiN films

Author(s): Gupta A, Wang H, Kvit A, et al.

Source: JOURNAL OF APPLIED PHYSICS Volume: 93 Issue: 9 Pages: 5210-5214 Published: MAY 1

2003

109. Plasma plume characteristics and properties of pulsed laser deposited diamond-like carbon films

Author(s): Haverkamp J, Mayo RM, Bourham MA, et al.

Source: JOURNAL OF APPLIED PHYSICS Volume: 93 Issue: 6 Pages: 3627-3634 Published: MAR 15

2003

110. Weak-localization effect in single crystal TaN(001) films

Author(s): Tiwari A, Wang H, Kumar D, et al.

Source: MODERN PHYSICS LETTERS B Volume: 16 Issue: 28-29 Pages: 1143-1149 Published: DEC

20 2002

111. Evolution of microstructure and mechanical properties of in situ consolidated bulk ultra-fine-grained and

nanocrystalline Zn prepared by ball milling

Author(s): Zhang X, Wang H, Scattergood RO, et al.

Source: MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES

MICROSTRUCTURE AND PROCESSING Volume: 344 Issue: 1-2 Pages: 175-181 Published: MAR 15

2003

112. Growth, characterization,, and electrical properties of PbZr0.52Ti0.48O3 thin films on buffered silicon

substrates using pulsed laser deposition

Author(s): Gilmore WM, Chattopadhyay S, Kvit A, et al.

Source: JOURNAL OF MATERIALS RESEARCH Volume: 18 Issue: 1 Pages: 111-114 Published: JAN

2003

113. Domain epitaxy: A unified paradigm for thin film growth

Author(s): Narayan J, Larson BC

Source: JOURNAL OF APPLIED PHYSICS Volume: 93 Issue: 1 Pages: 278-285 Published: JAN 1 2003

114. Formation of misfit dislocations in thin film heterostructures

Author(s): Narayan J, Oktyabrsky S

Source: JOURNAL OF APPLIED PHYSICS Volume: 92 Issue: 12 Pages: 7122-7127 Published: DEC 15

2002

115. Synthesis and atomic-level characterization of Ni nanoparticles in Al2O3 matrix

Author(s): Kumar D, Pennycook SJ, Lupini A, et al.

Source: APPLIED PHYSICS LETTERS Volume: 81 Issue: 22 Pages: 4204-4206 Published: NOV 25

2002

116. Mechanisms for grain size hardening and softening in Zn

Author(s): Conrad H, Narayan J

Source: ACTA MATERIALIA Volume: 50 Issue: 20 Pages: 5067-5078 Published: DEC 3 2002

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117. Formation of epitaxial Au/Ni/Au ohmic contacts to p-GaN

Author(s): Narayan J, Wang H, Oh TH, et al.

Source: APPLIED PHYSICS LETTERS Volume: 81 Issue: 21 Pages: 3978-3980 Published: NOV 18

2002

118. Studies of deformation mechanisms in ultra-fine-grained and nanostructured Zn

Author(s): Zhang X, Wang H, Scattergood RO, et al.

Source: ACTA MATERIALIA Volume: 50 Issue: 19 Pages: 4823-4830 Published: NOV 14 2002

119. Epitaxial growth of ZnO films on Si(111)

Author(s): Tiwari A, Park M, Jin C, et al.

Source: JOURNAL OF MATERIALS RESEARCH Volume: 17 Issue: 10 Pages: 2480-2483 Published:

OCT 2002

120. Z-contrast imaging of dislocation cores at the GaAs/Si interface

Author(s): Lopatin S, Pennycook SJ, Narayan J, et al.

Source: APPLIED PHYSICS LETTERS Volume: 81 Issue: 15 Pages: 2728-2730 Published: OCT 7 2002

121. Modulated oscillatory hardening and dynamic recrystallization in cryomilled nanocrystalline Zn

Author(s): Zhang X, Wang H, Scattergood RO, et al.

Source: ACTA MATERIALIA Volume: 50 Issue: 16 Pages: 3995-4004 Published: SEP 20 2002

122. Mechanism for grain size softening in nanocrystalline Zn

Author(s): Conrad H, Narayan J

Source: APPLIED PHYSICS LETTERS Volume: 81 Issue: 12 Pages: 2241-2243 Published: SEP 16 2002

123. Structure and properties of nanocrystalline zinc films

Author(s): Narayan J, Venkatesan RK, Kvit A

Source: JOURNAL OF NANOPARTICLE RESEARCH Volume: 4 Issue: 3 Pages: 265-269 Published:

JUN 2002

124. Copper diffusion characteristics in single-crystal and polycrystalline TaN

Author(s): Wang H; Tiwari A; Zhang X; et al.

Source: APPLIED PHYSICS LETTERS Volume: 81 Issue: 8 Pages: 1453-1455 DOI: 10.1063/1.1502193

Published: AUG 19 2002

125. Mechanical properties of cyromilled nanocrystalline Zn studied by the miniaturized disk bend test

Author(s): Zhang X; Wang H; Scattergood RO; et al.

Source: ACTA MATERIALIA Volume: 50 Issue: 13 Pages: 3527-3533 Article Number: PII S1359-

6454(02)00176-3 DOI: 10.1016/S1359-6454(02)00176-3 Published: AUG 1 2002

126. Tensile elongation (110%) observed in ultrafine-grained Zn at room temperature

Author(s): Zhang X; Wang H; Scattergood RO; et al.

Source: APPLIED PHYSICS LETTERS Volume: 81 Issue: 5 Pages: 823-825 DOI: 10.1063/1.1494866

Published: JUL 29 2002

127. Tensile elongation (110%) observed in ultrafine-grained Zn at room temperature

Author(s): Zhang X; Wang H; Scattergood RO; et al.

Source: APPLIED PHYSICS LETTERS Volume: 81 Issue: 5 Pages: 823-825 DOI: 10.1063/1.1494866

Published: JUL 29 2002

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31

128. Effect of thickness variation in high-efficiency InGaN/GaN light-emitting diodes

Author(s): Narayan J; Wang H; Ye JL; et al.

Source: APPLIED PHYSICS LETTERS Volume: 81 Issue: 5 Pages: 841-843 DOI: 10.1063/1.1496145

Published: JUL 29 2002

129. Structure and properties of nanocrystalline zinc films

Author(s): Narayan J; Venkatesan RK; Kvit A

Source: JOURNAL OF NANOPARTICLE RESEARCH Volume: 4 Issue: 3 Pages: 265-269 DOI:

10.1023/A:1019925315398 Published: JUN 2002

130. Strain-induced tuning of metal-insulator transition in NdNiO3

Author(s): Tiwari A; Jin C; Narayan J

Source: APPLIED PHYSICS LETTERS Volume: 80 Issue: 21 Pages: 4039-4041 DOI:

10.1063/1.1480475 Published: MAY 27 2002

131. Preparation of bulk ultrafine-grained and nanostructured Zn, Al and their alloys by in situ

consolidation of powders during mechanical attrition

Author(s): Zhang X; Wang H; Kassem M; et al.

Source: SCRIPTA MATERIALIA Volume: 46 Issue: 9 Pages: 661-665 Article Number: PII S1359-

6462(02)00048-9 DOI: 10.1016/S1359-6462(02)00048-9 Published: MAY 10 2002

132. Epitaxial growth of TaN thin films on Si(100) and Si(111) using a TiN buffer layer

Author(s): Wang H; Tiwari A; Kvit A; et al.

Source: APPLIED PHYSICS LETTERS Volume: 80 Issue: 13 Pages: 2323-2325 DOI:

10.1063/1.1466522 Published: APR 1 2002

133. Improved magnetic properties of self-assembled epitaxial nickel nanocrystallites in thin-film

ceramic matrix

Author(s): Kumar D; Zhou H; Nath TK; et al.

Source: JOURNAL OF MATERIALS RESEARCH Volume: 17 Issue: 4 Pages: 738-742 DOI:

10.1557/JMR.2002.0107 Published: APR 2002

134. Low-temperature resistivity minima in colossal magnetoresistive La0.7Ca0.3MnO3 thin films

Author(s): Kumar D; Sankar J; Narayan J; et al.

Source: PHYSICAL REVIEW B Volume: 65 Issue: 9 Article Number: 094407 DOI:

10.1102/PhysRevB.65.094407 Published: MAR 1 2002

135. Growth of epitaxial NdNiO3 and integration with Si(100)

Author(s): Tiwari A; Narayan J; Jin C; et al.

Source: APPLIED PHYSICS LETTERS Volume: 80 Issue: 8 Pages: 1337-1339 DOI: 10.1063/1.1451984

Published: FEB 25 2002

136. Low temperature electrical transport in La1-xNdxNiO3-delta

Author(s): Tiwari A; Rajeev KP; Narayan J

Source: SOLID STATE COMMUNICATIONS Volume: 121 Issue: 6-7 Pages: 357-361 Article Number:

PII S0038-1098(01)00007-8 DOI: 10.1016/S0038-1098(02)00007-8 Published: 2002

137. Structural, optical and magnetic properties of diluted magnetic semiconducting Zn1-xMnxO films

Author(s): Tiwari A; Jin C; Kvit A; et al.

Source: SOLID STATE COMMUNICATIONS Volume: 121 Issue: 6-7 Pages: 371-374 Article Number:

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PII S0038-1098(01)00464-1 DOI: 10.1016/S0038-1098(01)00464-1 Published: 2002

138. Integration of single crystal La0.7Sr0.3MnO3 films with Si(001)

Author(s): Tiwari A; Chug A; Jin C; et al.

Source: SOLID STATE COMMUNICATIONS Volume: 121 Issue: 12 Pages: 679-682 Article Number:

PII S0038-1098(02)00029-7 DOI: 10.1016/S0038-1098(02)00029-7 Published: 2002

139. Novel cubic ZnxMg1-xO epitaxial hetero structures on Si (100) substrates

Author(s): Narayan J; Sharma AK; Kvit A; et al.

Source: SOLID STATE COMMUNICATIONS Volume: 121 Issue: 1 Pages: 9-13 Published: 2002

140. Origins of stored enthalpy in cryomilled nanocrystalline Zn

Author(s): Zhang XH; Wang HY; Kassem M; et al.

Source: JOURNAL OF MATERIALS RESEARCH Volume: 16 Issue: 12 Pages: 3485-3495 DOI:

10.1557/JMR.2001.0479 Published: DEC 2001

141. Self-assembled epitaxial and polycrystalline magnetic nickel nanocrystallites

Author(s): Kumar D; Zhou H; Nath TK; et al.

Source: APPLIED PHYSICS LETTERS Volume: 79 Issue: 17 Pages: 2817-2819 DOI:

10.1063/1.1412428 Published: OCT 22 2001

142. Mechanical properties of nanocrystalline and epitaxial TiN films on (100) silicon

Author(s): Wang H; Sharma A; Kvit A; et al.

Source: JOURNAL OF MATERIALS RESEARCH Volume: 16 Issue: 9 Pages: 2733-2738 DOI:

10.1557/JMR.2001.0373 Published: SEP 2001

143. Magnetic properties of self-assembled nanoscale La(2/3)Ca(1/3)MnO(3) particles in an alumina

matrix

Author(s): Katiyar P; Kumar D; Nath TK; et al.

Source: APPLIED PHYSICS LETTERS Volume: 79 Issue: 9 Pages: 1327-1329 DOI: 10.1063/1.1399001

Published: AUG 27 2001

144. High coercivity and superparamagnetic behavior of nanocrystalline iron particles in alumina

matrix

Author(s): Kumar D; Narayan J; Kvit AV; et al.

Source: JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS Volume: 232 Issue: 3 Pages: 161-

167 DOI: 10.1016/S0304-8853(01)00191-3 Published: JUL 2001

145. Low temperature synthesis and electrical properties of epitaxial Sr0.8Bi2.2Ta2O9 thin films

Author(s): Chattopadhyay S; Kvit A; Kumar D; et al.

Source: APPLIED PHYSICS LETTERS Volume: 78 Issue: 22 Pages: 3514-3516 DOI:

10.1063/1.1374226 Published: MAY 28 2001

146. Evidence for the formation mechanism of nanoscale microstructures in cryomilled Zn powder

Author(s): Zhang X; Wang H; Narayan J; et al.

Source: ACTA MATERIALIA Volume: 49 Issue: 8 Pages: 1319-1326 DOI: 10.1016/S1359-

6454(01)00051-9 Published: MAY 8 2001

147. Structural and magnetoresistance properties of La2/3Ca1/3MnO3 thin films on buffered silicon

substrates

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Author(s): Kumar D; Chattopadhyay S; Gilmore WM; et al.

Source: APPLIED PHYSICS LETTERS Volume: 78 Issue: 8 Pages: 1098-1100 DOI: 10.1063/1.1350603

Published: FEB 19 2001

148. Microstructural changes due to heat-treatment of annealing and their effect on the creep behavior

of self-reinforced silicon nitride ceramics

Author(s): Wei Q; Sankar J; Narayan J

Source: MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES

MICROSTRUCTURE AND PROCESSING Volume: 299 Issue: 1-2 Pages: 141-151 DOI:

10.1016/S0921-5093(00)01403-9 Published: FEB 15 2001

149. Carbon nanotube composites synthesized by ion-assisted pulsed laser deposition

Author(s): Sharma AK; Kalyanaraman R; Narayan RJ; et al.

Source: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED

TECHNOLOGY Volume: 79 Issue: 2 Pages: 123-127 DOI: 10.1016/S0921-5107(00)00558-4 Published:

JAN 22 2001

150. Thin film of aluminum oxide through pulsed laser deposition: a micro-Raman study

Author(s): Misra A; Bist HD; Navati MS; et al.

Source: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED

TECHNOLOGY Volume: 79 Issue: 1 Pages: 49-54 DOI: 10.1016/S0921-5107(00)00554-7 Published:

JAN 4 2001

151. Effect of chamber pressure and atmosphere on the microstructure and nanomechanical properties

of amorphous carbon films prepared by pulsed laser deposition

Author(s): Wei Q; Sankar J; Sharma AK; et al.

Source: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND

FILMS Volume: 19 Issue: 1 Pages: 311-316 DOI: 10.1116/1.1322641 Published: JAN-FEB 2001

152. Tunable magnetic properties of metal ceramic composite thin films

Author(s): Kumar D; Narayan J; Nath TK; et al.

Source: SOLID STATE COMMUNICATIONS Volume: 119 Issue: 2 Pages: 63-66 DOI: 10.1016/S0038-

1098(01)00213-7 Published: 2001

Citation Classics: Most Cited Journal Papers with Citations over 100-1250 (* Seminal

Papers from Google Scholar/Web of Science)

1) *III–nitrides: Growth, characterization, and properties

SC Jain, M Willander, J Narayan, RV Overstraeten

Journal of Applied Physics 87 (3), 965-1006 (2000) 997 Times Cited

2) *Pulsed-laser evaporation technique for deposition of thin films: Physics and theoretical model

RK Singh, J Narayan

Physical Review B 41 (13), 8843 (1990) 850

3) *Optical and structural properties of epitaxial< equation>< font face='verdana'> Mg</font>< sub>

x</sub>< font face='verdana'> Zn</font>< sub> 1-x</sub>< font face='verdana'> O</font></equation>

alloys

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34

AK Sharma, J Narayan, JF Muth, CW Teng, C Jin, A Kvit, RM Kolbas, OW Holland

Applied physics letters 75 (21), 3327-3329 (1999) 377

4) ZnCoO-based diluted magnetic semiconducting thin films

S Ramachandran, A Tiwari, J Narayan

Applied physics letters 84, 5255-5257 (2004) 288

5) Excitonic structure and absorption coefficient measurements of ZnO single crystal epitaxial films

deposited by pulsed laser deposition

JF Muth, RM Kolbas, AK Sharma, S Oktyabrsky, J Narayan

Journal of Applied Physics 85 (11), 7884-7887(1999) 291

6) On the grain size softening in nanocrystalline materials

H Conrad, J Narayan

Scripta materialia 42 (11), 1025-1030(2000) 281

7) Structural, optical and magnetic properties of diluted magnetic semiconducting Zn< sub> 1− x</sub> Mn<

sub> x</sub> O films

A Tiwari, C Jin, A Kvit, D Kumar, JF Muth, J Narayan

Solid state communications 121 (6), 371-374 (2002) 232

8) Theoretical model for deposition of superconducting thin films using pulsed laser evaporation technique

RK Singh, OW Holland, J Narayan

Journal of applied physics 68 (1), 233-2472 (1990) 237

9) Epitaxial growth of TiN films on (100) silicon substrates by laser physical vapor deposition

J Narayan, P Tiwari, X Chen, J Singh, R Chowdhury, T Zheleva

Applied physics letters 61 (11), 1290-1292 (1992) 221

10) *Domain epitaxy: A unified paradigm for thin film growth

J Narayan, BC Larson

Journal of applied physics 93 (1), 278-2852 (2003) 263

11) *Formation of thin superconducting films by the laser processing method

J Narayan, N Biunno, R Singh, OW Holland, O Auciello

Applied physics letters 51 (22), 1845-1847 (1987) 216

12) *In situ processing of epitaxial Y‐Ba‐Cu‐O high T c superconducting films on (100) SrTiO 3 and (100)

YS‐ZrO 2 substrates at 500–650° C

RK Singh, J Narayan, AK Singh, J Krishnaswamy

Applied Physics Letters 54 (22), 2271-2273 (1989) 210

13) *Defects and interfaces in epitaxial ZnO/α-Al 2 O 3 and AlN/ZnO/α-Al 2 O 3 heterostructures

J Narayan, K Dovidenko, AK Sharma, S Oktyabrsky

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35

Journal of applied physics 84 (5), 2597-2601 (1998) 205

14) Laser annealing of boron‐implanted silicon

RT Young, CW White, GJ Clark, J Narayan, WH Christie, M Murakami, PW King ...

Applied Physics Letters 32 (3), 139-141 (1978) 205

15) Refractive indices and absorption coefficients of< equation>< font face='verdana'> Mg</font>< sub>

x</sub>< font face='verdana'> Zn</font>< sub> 1-x</sub>< font face='verdana'> O</font></equation>

alloys

CW Teng, JF Muth, U Ozgur, MJ Bergmann, HO Everitt, AK Sharma, C Jin, J Narayan

Applied Physics Letters 76 (8), 979-981(2000) 197

16) Epitaxial growth of AlN thin films on silicon (111) substrates by pulsed laser deposition

RD Vispute, J Narayan, H Wu, K Jagannadham

Journal of applied physics 77 (9), 4724-4728 (1995) 164

17) *Electrical properties of transparent and conducting Ga doped ZnO

V Bhosle, A Tiwari, J Narayan

Journal of applied physics 100 (3), 033713 (2000) 172

18) Room temperature ferromagnetism in< equation>< font face='verdana'> Zn</font>< sub> 1-x</sub>< font

face='verdana'> Cu</font>< sub> x</sub>< font face='verdana'> O</font></equation> thin films

D Chakraborti, J Narayan, JT Prater

Applied physics letters 90 (6), 062504 (2007) 172

19) *Interface structures during solid‐phase‐epitaxial growth in ion implanted semiconductors and a

crystallization model

J Narayan

Journal of Applied Physics 53 (12), 8607-8614 (1982) 155

20) High quality epitaxial aluminum nitride layers on sapphire by pulsed laser deposition

RD Vispute, H Wu, J Narayan

Applied physics letters 67 (11), 1549-1551 (1995) 149

21) Metallic conductivity and metal-semiconductor transition in Ga-doped ZnO

V Bhosle, A Tiwari, J Narayan

Applied physics letters 88 (3), 032106 (2006) 168

22) *Thin‐film deposition by a new laser ablation and plasma hybrid technique

J Krishnaswamy, A Rengan, J Narayan, K Vedam, CJ McHargue

Applied Physics Letters 54 (24), 2455-2457 (1989) 144

23) Ferromagnetism in Co doped CeO: Observation of a giant magnetic moment with a high Curie

temperature

A Tiwari, VM Bhosle, S Ramachandran, N Sudhakar, J Narayan, S Budak, A Gupta

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Applied physics letters 88, 142511 (2006) 153

24) *Novel cubic Zn< sub> x</sub> Mg< sub> 1− x</sub> O epitaxial heterostructures on Si (100) substrates

J Narayan, AK Sharma, A Kvit, C Jin, JF Muth, OW Holland

Solid state communications 121 (1), 9-13 (2001) 130

25) Nondestructive depth profiling by spectroscopic ellipsometry

K Vedam, PJ McMarr, J Narayan

Applied physics letters 47 (4), 339-341 (1985) 134

26) *Laser method for synthesis and processing of continuous diamond films on nondiamond substrates

J Narayan, VP Godbole, CW White

Science 252 (5004), 416-418 (1991) 131

27) Spectroscopic ellipsometry: A new tool for nondestructive depth profiling and characterization of

interfaces

PJ McMarr, K Vedam, J Narayan

Journal of applied physics 59 (3), 694-701 (1986) 129

28) Aluminum nitride films on different orientations of sapphire and silicon

K Dovidenko, S Oktyabrsky, J Narayan, M Razeghi

Journal of applied physics 79 (5), 2439-2445 (1996) 132

29) Subsurface heating effects during pulsed laser evaporation of materials

RK Singh, D Bhattacharya, J Narayan

Applied physics letters 57 (19), 2022-2024 (1990) 128

30) Effect of oxygen annealing on Mn doped ZnO diluted magnetic semiconductors

S Ramachandran, J Narayan, JT Prater

Applied physics letters 88 (24), 242503 (2006) 135

31) *Laser annealing of ion-implanted semiconductors

CW White, J Narayan, RT Young

Science 204 (4392), 461-468 (1979) 133

32) Epitaxial growth in large‐lattice‐mismatch systems

T Zheleva, K Jagannadham, J Narayan

Journal of applied physics 75 (2), 860-871 ( 1994) 105

33) Dislocation density reduction in gallium arsenide on silicon heterostructures

J Narayan, JCC Fan

US Patent 5,208,1829100 1993

34) p‐n junction formation in boron‐deposited silicon by laser‐induced diffusion

J Narayan, RT Young, RF Wood, WH Christie

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Applied Physics Letters 33 (4), 338-340 ( 1978) 105

35) Gallium-doped zinc oxide films as transparent electrodes for organic solar cell

applications, V Bhosle, JT Prater, F Yang, D Burk, SR Forrest, J Narayan, Journal of Applied

Physics 102 (2), 350

36) Ion implantation damage and annealing in germanium

OW Holland, BR Appleton, J Narayan

Journal of Applied Physics 54 (5), 2295-2301 (1983) 100

37) Effect of the chemical nature of transition‐metal substrates on chemical‐vapor

deposition of diamond, X Chen, J Narayan, Journal of applied physics 74 (6), 4168-4173

38) Low-temperature resistivity minima in colossal magnetoresistive La 0.7 Ca 0.3

MnO 3 thin films, D Kumar, J Sankar, J Narayan, RK Singh, AK Majumdar, Physical Review

B 65 (9), 094407

39) p‐n junction formation in boron‐deposited silicon by laser‐induced diffusion, J

Narayan, RT Young, RF Wood, WH Christie, Applied Physics Letters 33 (4), 338-340

40) Structural characteristics of AlN films deposited by pulsed laser deposition and

reactive magnetron sputtering: A comparative study, K Jagannadham, AK Sharma, Q

Wei, R Kalyanraman, J Narayan, Journal of Vacuum Science & Technology A 16 (5), 2804-2815

41) Studies of deformation mechanisms in ultra-fine-grained and nanostructured Zn,

X Zhang, H Wang, RO Scattergood, J Narayan, CC Koch, AV Sergueeva,, Acta materialia 50

(19), 4823-4830

42) On epitaxial growth of diamond films on (100) silicon substrates, J Narayan, AR

Srivatsa, M Peters, S Yokota, KV Ravi, Applied physics letters 53 (19), 1823-1825

43) Dislocation–twin interactions in nanocrystalline fcc metals, YT Zhu, XL Wu, XZ Liao,

J Narayan, LJ Kecskes, SN Mathaudhu, Acta Materialia 59 (2), 812-821

44) High quality optoelectronic grade epitaxial AlN films on α-Al 2 O 3, Si and 6H-

SiC by pulsed laser deposition, RD Vispute, J Narayan, JD Budai, Thin Solid Films 299

(1), 94-103

45) A novel method for simulating laser-solid interactions in semiconductors and

layered structures, RK Singh, J Narayan, Materials Science and Engineering: B 3 (3), 217-

230

46) Effects of pulsed ruby‐laser annealing on As and Sb implanted silicon, CW White, PP Pronko, SR Wilson, BR Appleton, J Narayan, RT Young, Journal of Applied Physics 50 (5), 3261-3273 (1979).

47) Semiconductor-metal transition characteristics of VO 2 thin films grown on c-and r-sapphire

substrates, TH Yang, R Aggarwal, A Gupta, H Zhou, RJ Narayan, J Narayan, Journal of Applied

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Physics 107 (5), 053514 (2010).

48) Characterization of damage in ion implanted Ge, BR Appleton, OW Holland, J Narayan, OE

Schow III, JS Williams, KT Short, Applied Physics Letters 41 (8), 711-712 (1982).

Important US PATENTS of Professor Narayan (from USPTO Website) (Total: 40)

1 8,222,740

Zinc oxide based composites and methods for their fabrication

2 7,994,105

Lubricant having nanoparticles and microparticles to enhance fuel efficiency,

and a laser synthesis method to create dispersed nanoparticles

3 7,803,717

Growth and integration of epitaxial gallium nitride films with silicon-based

devices

4 7,122,841

Bonding pad for gallium nitride-based light-emitting devices

5 7,105,118

Methods of forming three-dimensional nanodot arrays in a matrix

6 6,955,985

Domain epitaxy for thin film growth

7 6,881,983

Efficient light emitting diodes and lasers

8 6,847,052

Light-emitting diode device geometry

9 6,734,091

Electrode for p-type gallium nitride-based semiconductors

10 6,518,077

Method for making optoelectronic and microelectronic devices including cubic

ZnMgO and/or CdMgO alloys

11 6,423,983

Optoelectronic and microelectronic devices including cubic ZnMgO and/or

CdMgO alloys

12 5,453,153

Zone-melting recrystallization process

13 5,406,123

Single crystal titanium nitride epitaxial on silicon

14 5,221,411

Method for synthesis and processing of continuous monocrystalline diamond

thin films

15 5,208,182

Dislocation density reduction in gallium arsenide on silicon heterostructures

16 5,063,202

High transition temperature superconductors

17 5,021,119

Zone-melting recrystallization process

18 4,885,052

Zone-melting recrystallization process

19 4,863,877

Ion implantation and annealing of compound semiconductor layers

20 4,774,630

Apparatus for mounting a semiconductor chip and making electrical connections

thereto

21 4,376,755

Production of crystalline refractory metal oxides containing colloidal metal

precipitates and useful as solar-effective absorbers

22 4,261,764

Laser method for forming low-resistance ohmic contacts on semiconducting

oxides

23 4,181,538

Method for making defect-free zone by laser-annealing of doped silicon

24 4,147,563

Method for forming p-n junctions and solar-cells by laser-beam processing

PUB.

APP. NO. Title

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1 20100102450 ZINC OXIDE BASED COMPOSITES AND METHODS FOR

THEIR FABRICATION

2 20090042751 Lubricant having nanoparticles and microparticles to enhance fuel

efficiency, and a laser synthesis method to create dispersed

nanoparticles

3 20070280848 Methods Of Forming Alpha And Beta Tantalum Films With

Controlled And New Microstructures

4 20060266442 Methods of forming three-dimensional nanodot arrays in a matrix

5 20060130745 Domain epitaxy for thin film growth

6 20060016388 Domain epitaxy for thin film growth

7 20050161689 Efficient light emitting diodes and lasers

8 20050124161 Growth and integration of epitaxial gallium nitride films with silicon-

based devices

9 20040262621 Bonding pad for gallium nitride-based light-emitting devices

10 20040119064 Methods of forming three-dimensional nanodot arrays in a matrix

11 20040077135 Light-emitting diode device geometry

12 20040072381 Domain epitaxy for thin film growth

13 20040000671 Electrode for p-type gallium nitride-based semiconductors

14 20030160246 Efficient light emitting diodes and lasers

15 20030160229 Efficient light emitting diodes and lasers

16 20020084466 Optoelectronic and microelectronic devices including cubic ZnMgO

and/or CdMgO alloys

17. 2015 62245018 Q- carbon discovery and conversion of carbon into diamond

18. 2015 62202202 Q-BN discovery and conversion of h-BN into c-BN

(19) J. Narayan, Lubricant having nanoparticles and microparticles to enhance fuel

efficiency, and a laser synthesis method to create dispersed nanoparticles, China patent #

ZL200880105592.6 (8/28/2013)

(20) J. Narayan, Lubricant having nanoparticles and microparticles to enhance fuel

efficiency, and a laser synthesis method to create dispersed nanoparticles, India Patent No.

258967(2/18/2014)

Recent Research News Releases of Prof. Narayan High Points of Q-carbon and Q-BN Discovery

Materials Research Society: http://www.materials360online.com/newsDetails/60077

NSF Science 360: http://news.science360.gov/archives/20160205 IEEE Spectrum on c-BN: http://spectrum.ieee.org/nanoclast/semiconductors/materials/cheap-cubic-boron-nitride-for-power-transistors-and-switches Christian Science Monitor: http://www.csmonitor.com/Science/2015/1203/A-replacement-for-diamonds-Scientists-discover-Q-carbon Newsweek: http://www.newsweek.com/scientists-create-material-stronger-diamonds-400777

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NBC: http://www.nbcnews.com/tech/innovation/scientists-create-substance-harder-diamond-n473476 NY Times: http://www.nytimes.com/2015/12/03/science/q-carbon-harder-than-diamond.html?_r=1 Discovery: http://news.discovery.com/tech/nanotechnology/new-form-of-carbon-is-harder-than-diamonds-151203.htm Fox News: http://www.foxnews.com/tech/2015/12/02/scientists-discover-new-form-carbon-harder-than-diamonds.html Smithsonian: http://www.smithsonianmag.com/science-nature/weird-new-type-carbon-harder-brighter-than-diamond-180957433/?no-ist CNN: http://www.cnn.com/2015/12/01/tech/super-diamond-q-carbon-scientists-laser/ Popular Science: http://www.popsci.com/new-form-carbon-is-harder-than-diamonds-and-glows Gizmodo: http://gizmodo.com/theres-a-new-form-of-carbon-thats-harder-than-diamond-1745437658 Forbes: http://www.forbes.com/sites/ericmack/2015/11/30/scientists-create-new-kind-of-diamond-at-room-temperature/

ITV: https://www.youtube.com/watch?v=vFyCGf0XcA4 https://www.dropbox.com/s/wm04naodo4w214l/Jay%20Narayan%2012-29%20Edited.mpg?dl=0

http://www.rdmag.com/news/2013/11/researchers-integrate-single-crystal-bfo-silicon-chip

http://news.science360.gov/obj/story/ba3b22c3-9f57-4395-9dc3-5c66a1075e27/nanodots-

breakthrough-lead-library-one-chip

http://www.eetimes.com/document.asp?doc_id=1151135

http://news.ncsu.edu/releases/wmsnarayannanodots/

http://www.mse.ncsu.edu/news/multifunctional-smart-sensors-high-power-devices

http://www.mse.ncsu.edu/news/faculty-amongst-top-25

http://www.mse.ncsu.edu/news/functional-oxide-thin-films-create-new-field-of-oxide-

electronics

http://www.mse.ncsu.edu/news/narayan-article-most-downloaded

http://www.mse.ncsu.edu/news/narayan-discovers-new-more-efficient-transparent-conductors

http://www.mse.ncsu.edu/news/promise-for-spintronics

http://www.eetimes.com/document.asp?doc_id=1151137 (nanodots)

http://www.sciencedaily.com/releases/2004/09/040901092526.htm (Self assembly of Novel

Nanodots)

http://chronicle.com/article/Electronics-Pioneer-Sheds/65783/

http://www.rediff.com/news/report/jay-narayan-feted-as-michael-jordan-of-

microelectronics/20100625.htm Expertise:

Narayan’s expertise and technical interests include defects in solids, laser processing and pulsed

laser deposition of novel materials and thin film heterostructures across the misfit scale. Precise

controls of epitaxy and defects in oxides integrated with silicon substrates have resulted in novel

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functionality and smart device structures. His invention of domain epitaxy is practiced

universally to fabricate solid state devices, including high-efficiency light emitting diodes on

practical substrates such as silicon and sapphire. His currently funded research projects focus on

synthesis and processing of novel vanadium oxide and perovskite based thin film

heterostructures for smart sensors, and new phases of Q-carbon and Q-BN and direct conversion

of carbon into diamond and h-BN into c-BN in the form of nano- and micrdiamonds, nano- and

microneedles, and large-area single crystal films. These diamond and c-BN structures can be

doped with p- and n-type dopants and integrated for next-generation high-power devices and

transistors. Pure and doped Q-carbon can be made ferromagnetic, while doping can lead to

diamagnetism and high-temperature superconductivity with record transition temperatures.