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Condensed Résumé with Most Cited and Recent Publications
Jagdish (Jay) Narayan
The John C. C. Fan Family Distinguished Chair Professor and
ORNL Distinguished Visiting Scientist
Room 3030, Engineering Building I, Centennial Campus
Department of Materials Science and Engineering
North Carolina State University
Raleigh, NC 27695-7907, USA
Phone: (919) 515-7874; Fax: (919) 515-7642; E-mail: [email protected]
Birth Place : Kanpur, India, Naturalization Date : March 18, 1981
Education
Ph.D. (1971) and M.S. (1970) University of California, Berkeley; B. Tech. (1969 Univ First
Rank Medalist, Highest Hons. & Dist.) I.I.T., Kanpur, India, 1997 Distinguished Alumnus
Award
Major field- Materials Science and Engineering; Minor fields- Electrical and Computer
Engineering and Solid State Physics
Employment
2002- The John C. C. Fan Family Distinguished Chair Professor
1990- NCSU Distinguished University Professor (Materials Science and Engineering,
Electrical and Computer Engineering and Physics) and Director of Center for
Advanced Materials and Smart Structures
2007- ORNL Distinguished Guest Scientist
1990-92 National Science Foundation, Division of Materials Research, Director
1983- North Carolina State University, Professor
1984-86 Microelectronics Center of North Carolina, Director
1972-84 Oak Ridge National Lab., Senior Scientist and Leader of Thin Film and Electron
Microscopy Group
1971-72 Lawrence Berkeley National Lab., Research Metallurgist
Professional Affiliations:
Member: Albert Sauveur Achievement Award, ASM International; Member TMS Awards
Committee; Star Nanotech, LLC Board Chair; Q-Carbon, LLC Board Chair
Past Member: MRS Fellow Committee; MRS Governing Board Member; ASM Awards Policy
Committee Chair; ASM Gold Medal Committee Chair; Edward DeMille Campbell Lecture and
Prize Committee Chair; Kopin Corporation Board Member
Professional Association/Society Membership:
Materials Research Society (Member and Inaugural Fellow); American Physical Society (Life
Member and Fellow); The Metals, Minerals and Materials Society (TMS Life Member and
Fellow); American Association for the Advancement of Science (AAAS Fellow); ASM
International (Fellow); MRS-I (Honorary Member); Bohmische Physical Society (Fellow);
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National Academy of Sciences, India (Life Member and Fellow); National Academy of
Inventors (Life Fellow)
Summary of Recent Accomplishments:
Narayan discovered recently Q-carbon and direct conversion of carbon into diamond, in
addition to sequel discovery of Q-BN and direct conversion of h-BN into c-BN and related
nanostructured materials. This discovery started with his seminal papers in Science (Vol.
252,416 (1991) and Vol. 204, 461 (1979)) which culminated in 2015-16 with series of papers in
APL Materials 3, 100702 (2015); APL Materials 4, 202701 (2016); J. Appl. Phys. 118, 215303
(2015); J. Appl. Phys. 119, 185302 (2016); Materials Res. Letters 2016;
http://dx.doi.org/10.1080/21663931.2015.1126865; Materials Res. Letters, 2016
http://dx.doi.org/10.1080/21663831.2016.1249805; and ten US Patents and two International
Patents Pending (62/245,108 (2015); 62/202,202 (2015); and 62/331.217 (2016).
Discoveries of Q-carbon and Q-BN and direct conversion of carbon into diamond and h-BN into
c-BN at ambient temperatures and pressures in air, represent unparalleled contributions to the
field of materials science and new materials with greatest anticipated impact on advanced
technology ranging from high-power devices and quantum computing to bio-nano- and magnetic
sensors and targeted drug therapies. Narayan’s group has bypassed thermodynamics with the
help of kinetics and time control by nanosecond laser melting and created super undercooled
state of carbon and h-BN. The quenching of super undercooled state leads to formation novel Q-
carbon and Q-BN with many unique properties, including super hardness, room-temperature
ferromagnetism, and very large negative electron affinity. Diamond and phase-pure c-BN
microstructures are created in the form of nanodots, microcrystals, nanoneedles, and
microneedles. Large-area singles are grown by providing a template for epitaxial growth during
quenching of super undercooled liquid. A remarkable aspect of this discovery is that heating can
be confined to the carbon layer in such a way that while it melts underlying substrate remains
close to the ambient. Thus, direct conversion of carbon into diamond and h-BN into c-BN is
achieved at ambient temperatures and pressures in air. This leads to pure and doped diamond
and c-BN depositions on heat sensitive polymer substrates, thus facilitating next-generation of
flexible electronics. Controlled introduction of nitrogen-vacancy (NV) center defects (higher
than solubility limits) in diamond has potential for single-photon sensors, nanoscale electronic
and magnetic sensing, single-spin nuclear magnetic resonance, nanoscale thermometry,
fluorescent biomarkers and nanosensors. The group has also grown diamond on c-BN by pulsed
laser deposition of carbon at 500C without the presence of hydrogen, and created c-BN and
diamond epitaxial composites. This research represents a major breakthrough for diamond and
c-BN based high-power electronic and photonic devices, and host of other applications related
to high-speed machining, deep-sea drilling, field-emission displays and biomedical applications.
Narayan has published over 500 papers in archival journals (Science, Physical Review Letters,
Physical Review B, Applied Physics Letters, Journal of Applied Physics, Acta Materialia,
Philosophical Magazine..) and equal number in Conference Proceedings with over 23,000
citations (Google Scholar), h-index over 75, and 46 Citation Classics with citations over 100 to
1200, in addition to 40 Patents and 9 edited books. His top twelve highly cited papers have over
5,500 citations with seminal contributions in laser annealing and pulsed laser deposition, domain
matching epitaxy across the misfit scale, defects and interfaces in thin film heterostructures, and
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novel nonequilibrium and nanostructured materials. He has published over 235 papers in Applied
Physics Letters and Journal of Applied Physics alone, which ranked as top journals among the 95
journals in the Applied Physics and Materials Science Category tracked by Thomson Reuters.
Narayan’s research has been duly recognized by the American Institute of Physics (AIP) in last
year's Nobel Prize in Physics on Blue Light Emitting Diodes (LEDs) made from Gallium
Nitrides (III-nitrides) based materials. The AIP has singled out Narayan’s highly cited paper (J.
Appl. Phys. 87, 965 (2000) with over twelve hundred citations) on the development of GaN
based materials used in the Nobel Laureates' work. In fact, all high efficiency GaN- based
LEDs are manufactured today using a process made possible by Narayan’s invention of
quantum nanostructuring or Nano-Pocket LEDs (AIP Publishing http://aip-info.org/1XPS-2V90F-
B8C9LRLX04/cr.aspx).
Narayan’s pioneering contributions in laser-solid interactions and transient thermal processing,
pulsed laser deposition, defects in semiconductors, and domain matching epitaxy have resulted in
new materials and thin film heterostructures across the misfit scale integrated with practical
substrates such as silicon and sapphire. The following scientific contributions by Professor
Narayan and his group have impacted profoundly advanced materials and technologies thereof.
1) New Era in Oxide Electronics
Groundbreaking innovations (J. Narayan, US Patent # 8, 222,740 B2 (2012)) by Professor
Narayan and his group in nanostructured transparent conducting oxides have lowered the cost
of flat panel display devices and launched a new era in oxide electronics. The ZnO based
transparent conductors enhance optical power and lower manufacturing cost and switching
voltage of GaN based LEDs. He has also developed the first functional oxide thin films that can
be used efficiently in electronics, opening the door to an array of new high-power devices and
smart sensors. This is the first time that researchers have been able to produce positively
charged (p-type) conduction and negatively charged (n-type) conduction in a single oxide
material, launching a new era in oxide electronics. (For latest breaking news, Google: new era
in oxide electronics narayan)
2) Multifunctional Smart Sensors and High-Power Devices on a Computer Chip
The researchers have developed the means to, for the first time, integrate gallium nitride (GaN)
sensors and devices directly into silicon-based computer chips. “This enables the development
of high-power – high-voltage and high-current – devices that are critical for the development of
energy distribution devices, such as smart grid technology and high-frequency military
communications.” Professor Narayan and his students have patented (US Patent # 7,803,717,
(2010)) a new technology which is expected to revolutionize the global energy and
communications infrastructure. (For fast breaking news, Google: Multifunctional Smart
Sensors and High-Power Devices on a Computer Chip narayan)
3) Nanotechnology solutions to enhance fuel efficiency of automobiles and trucks and reduce
exhaust pollution
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Narayan has invented (US Patent # 7,994,105 (2011) and Patents in India, Turkey, China
granted) nano-oil and nano-fuel additives to improve fuel efficiency as much as 25% and reduce
exhaust pollution as much as 50%. While nano-oil additives reduce friction by hardening and
smoothening the internal surfaces of the combustion engines, the fuel additives further enhance
the efficiency by improving the combustion efficiency. These products are being tested in USA
and abroad for major marketing and sales through his company Star Nanotech, Inc.
4) High-efficiency Nano-Pocket LEDs for Solid State Lighting
Narayan’s inventions have shown that by quantum confining the carriers in Nano-Pockets by
thickness variation of quantum wells, it is possible to enhance internal quantum efficiency of
III-nitride and II-oxide based light emitting diodes (LEDs) to match and exceed the luminosity
of conventional fluorescent light sources. Today most of the high-efficiency LEDs in the market
are being manufactured by using the Narayan’s inventions of quantum confinement of carriers
by thickness variation of quantum wells containing Nano-Pockets. These patents (US Patents #
7122841, 6881983, 6847052, 6734091) have been licensed by the Kopin and Kobrite
Corporations.
5) Domain Epitaxy and Self-Assembled Nanostructures
Narayan’s discoveries in this area have led to three-dimensional epitaxial nanodot structures of
magnetic materials, opening a new gateway for information storage over 6 Tbits per chip. One
Tbits per chip corresponds to 250 million pages of information. This groundbreaking discovery
was hailed as one of the scientific breakthroughs of the year 2004 by the US National Science
Foundation. Following these discoveries, this technology is being used to create super data
storage disks (US Patents # 5,406,123; 6,955,985; 7,105,118). The first two patents on domain
matching epitaxy have been licensed by the Kopin Corporation.
Summary of Overall Scientific and Technological Accomplishments:
Narayan has made fundamental contributions in defects, diffusion, ion implantation and laser-
solid interactions, which have led to precise determination of activation energies for diffusion in
bulk and along dislocations and grain boundaries, critical energy for amorphization, and
quantitative crystallization and solute trapping and laser annealing models. These seminal
contributions have resulted in technological breakthroughs: (1) Formation of laser-diffused p-n
junctions and solar cells by laser processing (US patent # 4,147, 563 and IR-100 Award); (2)
Defect-free annealing of semiconductors (Science paper, US-DOE Award, US Patent #
4,181,538, and IR-100 Award); and (3) Laser method for forming low-resistance Ohmic
contacts, diamond and diamondlike films (Science paper and US Patent # 4,261,764).
Narayan pioneered the concept of solute trapping in semiconductors by his discoveries of laser
annealing in the late seventies and the formation of supersaturated semiconductor alloys for
which he received 1981 US-DOE Award and 1983 IR-100 on Supersaturated Semiconductor
Alloys that form the backbone of modern Integrated Circuits. Narayan received the 2011 Acta
Materialia Gold Medal for these pioneering contributions and his leadership in materials science
worldwide. The concept of solute trapping, which was introduced by John Cahn in the early
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seventies, resulted in the 2011 Kyoto Prize for Cahn and the 2011 Nobel Prize for Dan
Shechtman for his work on quasicrystals which formed due to Mn solute trapping in aluminum-
manganese alloys.
Narayan’s laser annealing research transitioned to pulsed laser deposition which led to: (1) First
key experiments and highly cited theoretical model, leading to PLD of high-transition
temperature superconductors (US Patent # 5,063,202); (2) Single-crystal TiN on Si with lattice
misfit over 22% (US patent # 5,406,123); (3) Novel ZnMgO and CdMgO alloys and thin film
heterostructures (US Patents # 6,423,983 & 6,518,077).
Narayan invented domain matching epitaxy (DME), which is based upon matching of integral
multiples of lattice planes across the film-substrate interface, to address epitaxial growth of
heterostructures across the misfit scale. The proposed DME paradigm and strain relaxation
mechanisms were verified by in-situ X-ray diffraction studies in a Synchrotron. Thus, 2% misfit
is accommodated by 49/50, and 25% by 3/4domain matching. The misfit in between such as
22.5% (which is close to TiN/Si) is accommodated by the principle of domain variation where
3/4 and 4/5 domains alternate with equal frequency (US Patents # 5,406,123 & 6,955,985).
The DME paradigm is revolutionizing the growth and integration of III-nitrides and II-oxides
on polar (c-sapphire) and nonpolar (r-sapphire and Si(100)), where fully relaxed films can be
grown on substrates involving large misfits. Kopin ( and Kobrite) Corp have licensed Narayan’s
dozen patents on DME and novel ZnMgO-ZnCdO materials , in addition to his patents on
Quantum confined NanoPocket LEDs and low-resistivity transparent epitaxial Ohmic contacts
to manufacture high efficiency LEDs for solid state lighting(US Patents # 6,881,983;
6,847,052; 6,734,091; 7,122,841).
Narayan invented integrated smart sensors and 3-D self-assembled nanostructures with oriented
magnetic nanodots formed by the DME paradigm for information storage which NSF hailed as
one of the breakthroughs of the year 2004 (US Patent # 7,105,118). Narayan’s work on bulk
nanocrysatlline materials, which started with Phys. Rev. Lett. 46, 1491 (1981); US Patent #
4,376,755 and IR-100 Award (1982), started nanotechnology revolution in metal-ceramic
nanocomposites. His most recent work on inverse Hall-Petch and grain softening, and twinning
deformation in nanocrystalline materials has been highly cited and duly recognized as a seminal
contribution to the field of nanomaterials.
Recent Honors and Awards:
1) Member of National Academy of Engineering (2017)
2) Life Member and of Fellow National Academy of Inventors (2014)
3) Life Member and Fellow National Academy of Sciences, India (1982, Limited to 100
Foreign Members)
4) 2014 North Carolina Science Award (Highest Civilian Honor of the State of North
Carolina) bestowed by the Governor of North Carolina, first Materials Scientist and
the sole winner at the Golden Jubilee Celebrations of North Carolina Awards. Past
winners included seven Nobel Laureates in Science, and others: Maya Angelou,
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Charlie Rose Andy Griffith, Charles Kuaralt, John Hope Franklin in literature,
Fine Arts and Public Service.
5) 2014 TMS Robert Franklin Mehl Gold Medal, Pinnacle Honor from The Materials
Society (most prestigious honor from World’s oldest -143 years old- professional
society) for Pioneering Contributions in Nanomaterials and Nanotechnology leading to
useful commercial products.
6) 2015 Professor SC Jain Memorial Lecture and Prize, 2015 IWPSD, December 7-10,
2015, IISc Bangalore, India.
7) 2016 ECE Emerging Materials Research Prize
8) 2015 Emerging Materials Research Prize (Best Paper in the Journal):
Mutlifunctional Heterostructures Integrated on Si(100), Emerging Materials Research 4,
50-70 (2015).
9) 2014 Mehl Medal from the Brazilian ABM-TMS and presented plenary keynote talk at
its 69th Annual ABM-TMS Meeting in Sao Paulo, July 20-24, 2014.
10) 2014 The Institute of Metals Lecture Award of TMS on Frontiers in Thin Epitaxy
and Novel Nanostructured Materials delivered at the 143rd TMS Annual Meeting in
San Diego, California, February 16-20, 2014
11) 2014 TMS International Symposium on Frontiers in Nanostructured Electronic and
Structural Materials and Their applications, Honoring Professor Narayan, at the 143rd
TMS Annual Meeting in San Diego, California, February 16-20, 2014
12) 2014 O. Max Gardner Award and Prize, Highest Award of the UNC System
The O. Max Gardner Award is the Highest Faculty Honor of The University of North
Carolina System comprising of 17 universities, given annually to one faculty member
whose academic and research contributions have made maximum impact on the human
race. The Winner receives a medallion and Prize of $35K. Professor Narayan is
recognized for his groundbreaking contributions in nanoscience and nanotechnology
leading to useful products for the society at large. This is the first in the field of
materials science in the 66 year history of the award named after 57th Governor of
North Carolina who also served in Roosevelt and Truman administrations. Past winners
included Nobel Laureate Oliver Smithies of UNC Chapel Hill. There was a thirty-
minute documentary on UNC-TV (April 16, 2014), covering the unprecedented
academic and research accomplishments of Professor Narayan in nanoscience and
nanotechnology, which have impacted the society. In addition, NCSU Memorial Bell
Tower (Prominent Historical Landmark in Raleigh) was lighted in Professor Narayan’s
honor on May 2 2014, after the Chancellor’s reception. The award announcement was
covered by The News & Observer on April 12, 2014. There was a special ceremony on
the platform by the NCSU Chancellor and the UNC Board of Governors to celebrate O.
Max Gardner Award Winner at the 2014 NCSU Convocation on May 10, 2014.
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13) Journal of Materials Research Volume 28, 2013 devoted to Professor Narayan’s
research on FRONTIERS IN THIN FILM EPITAXY AND NANOSTRUCTURED
MATERIALS, part of 2011 MRS Forum in honor of Prof. Narayan
14) Acta Materialia Special Issue Volume 61, Issue 8, Pages 2703-3140 (May 2013)
Devoted to Professor Narayan’s Gold Medal
(http://www.sciencedirect.com/science/journal/13596454/61/8)
15) 2012 Alexander Holladay Medal (Highest NC State Faculty Honor)
16) 2011 Acta Materialia Gold Medal and Prize for pioneering contributions and
leadership in materials science worldwide, an international prize sponsored by the
federation of 33 professional societies
17) 2011 MRS Forum: 2011 MRS Spring Meeting, San Francisco, April 25-30, 2011.
Acta Materialia Gold Medal Forum: Frontiers in Thin Film Epitaxy and
Nanostructured Materials (Honoring Professor Jay Narayan): Forum Chairs -Amit
Goyal (Oak Ridge National Lab); Bill Appleton (University of Florida, Gainesville);
Sungho Jin (UC San Diego); Justin Schwartz (NCSU). Funded by Kopin Corp and
Army Research Office
18) 2011 MS&T Meeting, Columbus, Ohio, October 17-20, 2011. International
Symposium on Advances in Nanostructured Materials and Applications (Honoring
Professor Jay Narayan). Co-Chairs: Haiyan Wang and Xinghang Zhang (Texas A&M);
Ravi Ravindra (NJIT); Yuntian Zhu (NC State); Rajiv Singh (University of Florida);
Alan Ardell (NSF); and John Prater (ARO). Funded by Army Research Office and
Acta Materialia (Elsevier), Special Volume 61 (8) of Acta Materialia devoted to this
Sympoium
19) 2011 Reynolds Prize, highest NCSU honor for excellence in research, teaching and
extension
20) 2011 Lee Hsun Lecture Award from the Chinese Academy of Sciences
21) Acta Materialia Award Forum Chair: Materials Research for Advancing Science and
Society (Honoring Professor Millie Dresselhaus): Forum Chair- Jay Narayan (NC State).
Funded by Army Research Office and Acta Materialia (Elsevier) at 2012 MRS Fall
Meeting, Boston, November 25-30, 2012.
Other Honors: 2004 ASM Edward DeMille Campbell Lecture (New Frontiers in Thin Film
Growth and Nanomaterials) and Prize; 1999 ASM-International Gold Medal (Highest honor
from world’s largest materials science and technology society); 2008 MRS Inaugural Fellow
(one of the first 34 materials researchers in the world); 2005 TMS Symposium on NEW
FONTIERS IN THIN FILM GROWTH AND NANOMATERIALS held in honor of Professor
Narayan at the 134th TMS Annual Meeting in San Francisco; Journal of Electronic Materials
(May 2006 Issue) Published honoring Professor Narayan; 2003 Electronic Products Magazine’s
“Product of the Year” Award; ASM Best-in-Class Award (1971); DOE (Div. of Materials
Sciences) Award for Outstanding Research (1981); IR-100 Award (1979) for Laser Diffused p-
n Junctions and Devices; IR-100 Award (1981) for Novel Supersaturated Semiconductor
Alloys; IR-100 Award (1982) for New Nanocrystalline Metal-Ceramic Composites; 1992 NSF
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Distinguished Service Award; 1997 IIT/K Distinguished Alumnus Award; NCSU –
Distinguished University Research Professorship (1990- ); 2001ASM-International Best
Paper Award; EMSA – Best Paper Award (1994); One of the most cited authors for Journal
articles published 1980 through 1997 (Max-Planck Citation Index), Google Scholar Citation
Index: over 25,000 Citations, h-index >79, Citation Classics 50 (Citations: >100-1220).
http://chronicle.com/article/Electronics-Pioneer-Sheds/65783/.
Recent Plenary and Invited Talks at International Conferences
1) Invited Talk: Self-Assembly of Epitaxial Magnetic Nanostructures
2010 MRS Spring Meeting, San Francisco, April 5-9, 2010.
First Place Prize: Poster Paper on Mechanism of Semiconductor to Metal Transition of
VO2 Thin Films (Symposium N) 2010 MRS Spring Meeting, San Francisco, April 5-9,
2010
2) Plenary Invited Talk: Frontiers in Nanoscience and Nanotechnology,”
2010 Materials Conclave, The IITK Golden Jubilee Conference, December 19-21, 2010
3) Plenary Invited Talk : Defects and Interfaces in nanostructured Materials: Opportunities
and Challenges
2011 MRS Spring Meeting April 24-29, 2011
7) Plenary Invited Talk: Frontiers in Nanomaterials Processing and Characterization
2009 IWPSD: Fifteenth International Workshop on the Physics of Semiconductor
Devices,
Dec 15-19, 2009, New Delhi, India.
8) Plenary Invited Talk : Frontiers in Nanostructured Materials for Next-Generation
nanotechnology
Indo-US Conference on Fabrionics: Science of Advanced Fabrication, December 9-12,
2009, IIT, Kanpur, India.
Session Chair at Indo-US Conference on Fabrionics: Science of Advanced Fabrication,
December 9-12, 2009, IIT, Kanpur, India.
9) Keynote Address, Plenary Invited Talk: Transition from Nanoscience to
Nanotechnology to Manufacturing
Indo-French Workshop on Nanoscience and Nanotechnology, October 12-14, 2009,
Ansal Institute of Technology, Gurgaon, India.
Panel Chair on Future Directions in Nanoscience, Nanotechnology and Manufacturing
10) Keynote Address, Plenary Invited Talk: Nanoscience and Nanotechnology Impact on
Energy and Environment
International Conference on Nanoscience and Nanotechnology (AIT NANO- 2009),
October 14-17, 2009, Gurgaon, India.
Panel Chair on Future Directions in Nanoscience, Nanotechnology
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11) Keynote address: Twenty-fifth Anniversary of Kopin Corporation, Gillette Stadium,
Foxboro, MA.
Nanotechnology Innovations for Next Generation (April 28, 2010)
12) Plenary Invited Talk: Frontiers in Nanostructured and Nanotechnology and Impact on
Society
ICONSAT 2012, International Conference on Nanoscience and Nanotechnology,
Jan 20-23, Hyderabad, India.
13) Chair: Indo-US Forum on Nanoscience and Nanotechnology at 2012 ICONST, Jan
21, 2012. 14) Plenary Session Chair at the ICONSAT 2012, International Conference on Nanoscience
and Nanotechnology, Jan 20-23, Hyderabad, India.
15) Plenary Invited Talk: Frontiers in Nanostructured Materials for Next-Generation
Nanotechnology
2012 VMN, International Conference on VLSI, MEMS and NEMS, Jan 24-25, 2012,
Amity University, Noida, India
16) Plenary Session Chair at the 2012 VMN (VLSI, MEMS & NEMS) Conference
17) Invited Talk: 2012 MRS Fall Meeting, November 25-30, 2012, Boston, MA
Title: Designing Novel Nanostructured Materials with Improved Properties
18) Chair: MRS Forum at the 2012 MRS Fall Meeting, November 25-30, 2012, Boston,
MA
19) Plenary Invited Talk, 2011 MS&T Meeting, October 16-20, 2011, Columbus, Ohio
20) Plenary Keynote Speaker, ICCE-20, Twentieth Annual International Conference on
Composites and Nanoengineering, July 22-28, 2012, Beijing, China.
Title: Frontiers of Nanostructured Materials and Nanocomposites
21) The 2012 Lee Hsun Award Lecture, July 20, 2012, Shenyang, China, Sponsored by
Chinese Academy of Sciences, IMR and Shenyang National Laboratory
Title: Frontiers in Nanostructured Materials for Next-generation Nanotechnology
22) The 2014 TMS (The Materials Society) Institute of Metals Lecture on the Frontiers
in Thin Film Epitaxy and Novel Nanostructured Materials in the Symposium on
Frontiers in Nanostructured Electronic and Structural Materials and Their Applications,
held in his honor at the 143rdTMS Annual Meeting in San Diego, February 16-20, 2014.
23) Plenary Invited Talk on Frontiers in Nanomaterials and Impact on Nanotechnology
at The 2014 Pan American Materials Conference, ABM, July 21-25, Sao Paulo,
Brazil.
24) 2014 MRS Spring Meeting, San Francisco, April 20-25, 2014: Plenary Talk (in
Symposium K) on Novel Two-dimensional Multifunctional Nanostructured Materials),
Invited Talk VV on Tuning of electrical and magnetic Properties of nanostructured
oxides, and Invited Talk FFF on Holistic approach to training and mentoring of next-
generation materials scientists.
25) 2015 MRS Spring Meeting, April 6-10, Invited Talk on Defects and Interfaces in Oxide
Thin Film Heterostructures
26) 2015 MRS Fall Meeting, November 29-December 4, Invited Talk on Discovery of Q-
carbon and Direct Conversion of Carbon into Diamond
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27) 2015 SC Jain Memorial Lecture and Prize, Plenary Talk at the 2015 IWPSD
(International Workshop on Physics of Semiconductor Devices, Dec 7-10, IISc,
Bangalore, India
28) JNCASR-Cambridge University Winter School-2015 on Frontiers in Materials
Science, Dec 7-11, Bangalore, India, Plenary Talk Novel Two Dimensional
Multifunctional Materials and Discovery of Q-carbon
29) Third International Conference on Nanostructured Materials and nanocomposites,
December 12-14, 2015, Opening Plenary Talk and Session Chair
30) 2016 MRS Spring Meeting, March 28-April 1, Phoenix, Invited Talk on Discovery of
Q-carbon and Q-BN and Direct Conversion of Carbon into Diamond and h-BN into c-BN
(Invited Lecture Recorded by MRS and Paper Published in MRS Advances) .
Impact of Work
Profound impact on thin film epitaxy across the misfit scale, defects and interfaces, laser processing,
semiconductor doping and novel materials processing which led to a record three IR-100 Awards for
new materials and technologies. Narayan holds forty patents on domain matching epitaxy, defect
reduction in thin film heterostructures, new materials, and processing of semiconductor devices. His
patents on domain epitaxy (US Patents # 6955985 & 5406123) are being used to form the nucleation
or foundation layer of all the LEDs manufactured today. Narayan’s patent (US Patent # 6881983) on
quantum nanostructuring (Nano-Pocket LEDs) by thickness variation of quantum wells is used
universally to enhance internal quantum efficiency and brightness. He holds ten patents with Kopin
Corp (and Kobrite Corp), which are pivotal to their highly successful CYBER display,
nanostructured LEDs and solid state lighting and high-power device business. The Kopin Corp, MIT
spin-off and Massachusetts based multinational Corp, has licensed patents related to domain epitaxy
and new cubic ZnMgO and ZnCdO alloys from NCSU to manufacture III-nitride and II-oxide based
light emitting diodes and lasers covering the entire range of the visible spectrum. Using DME and 3-
D thin-film growth concepts (Volmer-Weber growth), Narayan invented 3-D self-assembled
nanostructures with oriented nanodots (US Patent # 7,105,118, Sept 12, 2006), which NSF hailed as
one of the breakthroughs of the year (2004). He founded Star Nanotech, Inc. to successfully
commercialize Narayan’s US Patent #7994105 for nanotech solutions to enhance fuel efficiency;
www.starnanotechnology.com) and Q-Carbon LLC (www.q-carboninc.com) has licensed twelve of
Narayan’s patents to manufacture Q-carbon, diamond, Q-BN and c-BN based products. A large
fraction of these companies have been bought by private investors.
Landmark Research Areas and Publications
Properties of Vacancies and Interstitials in MgO – Scripta Met 6, 259 (1972) and Phil Mag. 26, 1179
(1972); J. Appl. Phys 43, 4862(1972); Acta Met 21, 533(1973).
Laser Annealing of Ion Implanted Semiconductors – Appl. Phys. Lett. 32, 139 (1978) Citation Classic, and
(Invited) Science 204, 461 (1979) Citation Classic; Pulsed Laser Melting – Phil Mag 43, 1515 (1981) and
Phys. Rev. Lett. 52, 561 (1983).
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Interface Instability and Formation of Supersaturated Semiconductor Alloys – J. Appl. Phys. 52, 1289
(1981) and Appl. Phys. Lett. 41, 239 (1982).
Pulsed Laser Deposition and Processing of Thin Films – Appl. Phys. Lett. 51, 1845 (1987) and Physical
Review B41, 8843 (1990) Citation Classic, and Science 252, 416 (1991) and (Invited) International Materials
Reviews 42, 137 (1997).
Atomic Structure of Dislocations and Grain Boundaries – Phil. Mag. A71, 537 (1995); Phil Mag. A72,
297 (1995) and Phil Mag. A73, 767 (1996); J. Appl. Phys.92, 7122(2002) and Recent Papers below.
Domain Epitaxy and Thin Films – Appl. Phys. Lett. 61, 1290 (1992); J. Appl. Phys. 84, 2597 (1998); J.
Appl Phys. (Invited Review) 87, 965 (2000); J. Appl. Phys.93,278(2003) and Met and Mat Trans 36, 5
(2005)- Edward DeMille Campbell Lecture and Recent Papers below.
Novel Nanocrystalline Materials – Phys. Rev. Lett. 46, 1491 (1981); Phil Mag A 49,287(1984); Phil Mag
49, 475(1984); US Patent 4,376,755(1984); Appl. Phys. Lett. 76, 43 (2000); J. Nanoparticle Research 2,
91(2000);4,265(2002); Acta materialia 50, 3527 (2002); Acta Materialia 50, 5067(2002); Acta Materialia 50,
3995(2002); Acta Materialia 50, 4823(2002); J. Nanoscience and Nanotechnology 4, 726 (2004); J. Appl.
Phys. 89, 132502 (12006); J. Appl Phys 100, 034309 (2006) and Recent Papers below.
III-nitride and II-oxide Based Materials- Appl. Phys Lett 67, 1549(1995); J. Appl Phys. 84,2597(1998);
Appl Phys. Lett. 74, 2465(1999); J. Appl Phys, 85, 7884(1999); Solid State Comm 121, 9(2002); Appl. Phys
Lett 81,841(2002); Sold State Comm 121, 371(2002); Appl. Phys Lett 81, 3978(2002) and Recent Papers
below.
Perovskite Based Materials- J. Appl. Phys. 80,6720(1996); Appl. Phys Lett 71, 1709(1997); Appl. Phys Lett
76, 1458(2000); Appl. Phys Lett 80,4039(2002); Solid State Comm 121, 357(2002) and 121 357(2002); Appl
Phys Lett 80,1337(2002) and Recent Papers below.
Diluted Magnetic Semiconductors- Solid State Comm 121, 371 (2002); Appl. Phys Lett 88, 142503 (2006);
J. Elect Mat 35, 852 (2006); Appl. Phys Lett 88, 142511 (2006); Applied Phys Lett 84, 5255(2004); Appl
Phys Lett 87, 172502 (2005) and Recent Papers below.
Smart Materials and Transparent Conducting Oxides- J. Appl. Phys 100, 103524 (2006); J. Appl. Phys
100, 123 102 (2006); J. Appl Phys 100, 093519 (2006); J. Appl Phys 100, 033713 (2006); Appl Phys Lett 88,
032106 (2006); J. Appl Phys 97, 083539 (2005) and Recent Papers below.
Principal Technical Society Membership and Activities
Inaugural MRS Fellow; Life Member and Fellow TMS (The Materials Society) and National
Academy of Sciences, India – both limited to 100 members; Life Member and Fellow of APS;
Fellow of ASM International; Fellow of AAAS; Materials Research Society Governing Board
Councillor (1984-87); MRS Fall Meeting Co-chair (1984), MRS Long-Range Planning (1987-89);
Executive council-Electronic, Magnetic and Photonic Materials Division of TMS; DOE-National
Labs. and NSF-major facilities reviewer; TMS Awards Chair-EMPMD; Board member Kopin
(Highly Successful Advanced Materials and Display Devices Co.); Consultants at H. C. Starck, Inc.,
Advanced Ceramics, Lockheed Martin, Honeywell and Spire Corp.; Director – Division of Materials
Research, NSF (1990-92); NSF Representative to NRC Committees; NSF Chair for the Presidential
Materials (AMPP) Initiative; Member – University of Alabama Advisory Committee; Member –
Visiting Committee (School of Materials Science and Engineering) Georgia Tech.; TMS Bruce
11
Chalmers Award Committee Member and Chair (2000-03); Army Research Office (ARO) Board
Member and Chairman of the Board (2002); ASM Nominating Committee Member; ASM Gold
Metal Committee Member and Chair (2001-04); International Materials Reviews Committee
Member: TMS John Bardeen Committee Member and Chair (2004-07).
Research Training and Mentoring of Students
Narayan has graduated over 70 Ph.D. students and trained 40 Postdocs who are employed in leading
companies such as IBM, INTEL, Motorola, Texas Instruments, AMD; National Labs., and
universities. Fourteen of them are in tenured and tenure-track faculty positions, six of these students
received NSF-NYI/CAREER Award, One Presidential Early CAREER (PECASE) Award, five
MRS-Best Graduate Student Medal, one TMS Hardy Gold Medal, three TMS Young Scientist
Award, one IBM Faculty Awards, EMSA and ASM Best Paper Awards, etc. Some his students have
received Fellow Honors from premier professional societies: AAAS, APS, ASM, IEEE, MRS and
ECS. In 2013-14, he graduated five PhD students who joined INTEL Corporation.
Teaching Accomplishments
Since his tenure at NCSU in 1983, Professor Narayan has developed a total of eight graduate-level
courses which are intimately connected with his research:
1. MSE 702 – Defects in Solids
2. MSE-465/565 – introduction to Nanomaterials
3. MSE 760 – Materials Science and Processing of Semiconductor Devices
4. MSE 770 – Defects, Diffusion and Ion Implantation in Semiconductors
5-6. MSE 791 A & B – Advanced Materials and Smart Structures I & II
7-8 MSE 791 J & K – Advanced Materials Processing I & II
Three of them MSE-760, MSE-702 and MSE-465/565 are taught on Distance-Education Network,
Engineering Online Network. These courses MSE-465/565 (Introduction to Nanomaterials), MSE
760 (Materials Science and Processing of Semiconductor Devices) and MSE -702 (Defects in
Solids) are very popular among NCSU students and practicing engineers in microelectronics and
Photonics industry such as IBM, INTEL, Motorola, AMD, to update their skills and finish the M.S.
degrees. Narayan pioneered Distance-Education teaching in North Carolina, starting with his first
course in 1985. The GA/Office of the President has provided a special grant as a part of the UNC E
learning Initiative to incorporate these courses into a special degree program in Photonics and
Microelectronics. Narayan also obtained the GA grant to develop MS in Nanoengineering which is
offered via Engineering Online nationally and internationally starting fall 2014 under his direction.
Publications in Archival Journals (Total over 500 papers in Journals and equal number in
Conf Proceedings; 9 Books edited, and 40 US Patents): Total Citations 25,000, h-index >79
Recent (2016-2014) Archival Journal papers
1) Multifunctional epitaxial systems on silicon substrates By: Singamaneni, Srinivasa Rao;
Prater, John Thomas; Narayan, Jagdish APPLIED PHYSICS
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REVIEWS Volume: 3 Issue: 3 Article Number: 031301 Published: SEP 2016 (One of the Most Cited Papers: Impact factor 15)
2) Wafer scale integration of reduced graphene oxide by novel laser processing at room temperature in air By: Bhaumik, Anagh; Narayan, Jagdish JOURNAL OF APPLIED
PHYSICS Volume: 120 Issue: 10 Article Number: 105304 Published: SEP 14 2016
3) Dependence of grain size and defect density on the magnetic properties of mechanically alloyed Fe90W10 powder By: Yamoah, N. K.; Koten, M. K.; Thompson, D.; J.
Narayan, JOURNAL OF APPLIED PHYSICS Volume: 120 Issue: 14 Article Number: 143903 Published: OCT 14 2016
4) Defect mediated room temperature ferromagnetism and resistance minima study in epitaxial ZnGa0.002Al0.02O transparent conducting oxide films By: Temizer, Namik K.;
Nori, Sudhakar; Kumar, D.; J. Narayan. JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 49 Issue: 34 Article Number: 345302 Published: SEP 1 2016
5) Mechanical properties of copper/bronze laminates: Role of interfaces
By: Ma, Xiaolong; Huang, Chongxiang; Moering, Jordan; J. Narayan. ACTA MATERIALIA Volume: 116 Pages: 43-52 Published: SEP 1 2016
6) Multi-frequency ferromagnetic resonance investigation of nickel nanocubes
encapsulated in diamagnetic magnesium oxide matrix, Saritha Nellutla, Sudhakar
Nori, Srinivasa R. Singamaneni, John T. Prater, Jagdish Narayan, and Alex I. Smirnov, J.
Appl. Phys 120, 223902 (2016).
7) Two-Dimensional Layered Oxide Structures Tailored by Self Assembled Layer
Stacking via Interfacial Strain By: Zhang, Wenrui; Li, Mingtao; Chen, Aiping; J.
Narayan. ACS APPLIED MATERIALS &
INTERFACES Volume: 8 Issue: 26 Pages: 16845-16851 Published: JUL 6 2016
8) Research Update: Direct conversion of amorphous carbon into diamond at ambient pressures and temperatures in air By: Narayan, Jagdish; Bhaumik, Anagh APL
MATERIALS Volume: 3 Issue: 10 Article Number: 100702 Published: OCT 2015 9) Direct Conversion of h-BN into c-BN and Formation of Epitaxial c-BN/Diamond
Heterostructures By: Narayan, Jagdish; Bhaumik, Anagh JOURNAL OF APPLIED PHYSICS 119,185302 (2016).
10) Novel synthesis and properties of pure and NV nanodiamonds and other nanostructures, : Narayan, Jagdish; Bhaumik, Anagh; Materials Res. Letters, 2016 http://dx.doi.org/10.1080/21663831.2016.1249805.
11) Novel phase of carbon, ferromagnetism, and conversion into diamond By: Narayan, Jagdish; Bhaumik, Anagh JOURNAL OF APPLIED PHYSICS Volume: 118 Issue: 21 Article Number: 215303 Published: DEC 7 2015
12) Research Update: Direct conversion of h-BN into pure c-BN at ambient temperatures and pressures in air By: Narayan, Jagdish; Bhaumik, Anagh, APL
MATERIALS Volume: 4 Issue: 2 Article Number: 020701 Published: FEB 2016 13) DISCOVERY OF Q-PHASES AND DIRECT CONVERSION OF CARBON INTO DIAMOND
AND h-BN INTO c-BN By: Narayan, Jagdish; Bhaumik, Anagh; Narayan, Roger ADVANCED
MATERIALS & PROCESSES Volume: 174 Issue: 3 Pages: 24-28 Published: MAR 2016
14) Q-carbon discovery and formation of single-crystal diamond and nano- and microneedles and thin films by: Narayan, Jagdish; Bhaumik, Anagh;
Materials Research Letters 2016; http://dx.doi.org/10.1080/21663931.2015.1126865.
15) Fundamental Discovery of New Phases and Direct Conversion of Carbon into Diamond and hBN into cBN and Properties By: Narayan, Jagdish; Bhaumik, Anagh
METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE Volume: 47A Issue: 4 Pages: 1481-1498 Published: APR 2016
16) Epitaxial growth of rutile TiO2 thin films by oxidation of TiN/Si{100} heterostructure
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By: Moatti, A.; Bayati, R.; Narayan, J., ACTA MATERIALIA Volume: 103 Pages: 502-511 Published: JAN 15 2016
17) Diamagnetism to ferromagnetism in Sr-substituted epitaxial BaTiO3 thin films By: Singamaneni, Srinivasa Rao; Punugupati, Sandhyarani; Prater, John T.; Narayan, J. APPLIED PHYSICS LETTERS Volume: 108 Issue: 14, 142404 (2016).
18) Stacking-fault energy effect on zero-strain deformation twinning in nanocrystalline Cu-Zn alloys, By: Ma, X. L.; Zhou, H.; Narayan, J.; et al., SCRIPTA MATERIALIA Volume: 109 Pages: 89-93 Published: DEC 2015
19) Strain induced room temperature ferromagnetism in epitaxial magnesium oxide thin films, By: Jin, Zhenghe; Nori, Sudhakar; Lee, Yi-Fang; et al., JOURNAL OF APPLIED PHYSICS Volume: 118 Issue: 16 Article Number: 165309 Published: OCT 28 2015
20) Magnetic exchange coupling in bilayers of two epitaxial ferromagnetic oxides,
By: Singamaneni, Srinivasa Rao; Prater, John T.; Narayan, Jagdish, CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE Volume: 19 Issue: 5 Pages: 301-304 Published: OCT 2015
21) Microstructure and transport properties of epitaxial topological insulator Bi2Se3 thin films grown on MgO (100), Cr2O3 (0001), and Al2O3 (0001) templates, By: Lee, Y. F.; Kumar, R.; Hunte, F.; et al. JOURNAL OF APPLIED PHYSICS Volume: 118 Issue: 12 Article Number: 125309 Published: SEP 28 2015
22) Fabrication of epitaxial Cu3Ge on sapphire with controlled crystallinity and planar defects, By: Wu, F.; Zheng, J. K.; Cai, W.; et al., JOURNAL OF ALLOYS AND COMPOUNDS Volume: 641 Pages: 238-243 Published: AUG 25 2015
23) Control of intrinsic defects and magnetotransport properties of Bi2Se3/c-sapphire epitaxial heterostructures, By: Lee, Y. F.; Kumar, R.; Hunte, F.; et al., ACTA MATERIALIA Volume: 95 Pages: 57-64 Published: AUG 15 2015
24) Multifunctional heterostructures integrated on Si (100), By: Singamaneni, Srinivasa Rao;
Narayan, Jay; Prater, John T., EMERGING MATERIALS RESEARCH Volume: 4 Issue: 1 Pages: 50-70 Published: JUN 2015
25) Room temperature ferromagnetism in epitaxial Cr2O3 thin films grown on r-sapphire,
By: Punugupati, Sandhyarani; Narayan, Jagdish; Hunte, Frank, JOURNAL OF APPLIED PHYSICS Volume: 117 Issue: 19 Article Number: 193907 Published: MAY 21 2015
26) Complete vertical M-H loop shift in La0.7Sr0.3MnO3/SrRuO3 thin film heterostructures, By: Singamaneni, Srinivasa Rao; Fan, Wu; Prater, J. T.; et al., JOURNAL OF
APPLIED PHYSICS Volume: 117 Issue: 17 Article Number: 17B711 Published: MAY 7 2015
27) Ferroelectric and magnetic properties of multiferroic BiFeO3-La0.7Sr0.3MnO3 heterostructures integrated with Si (100), By: Singamaneni, Srinivasa Rao; Prater, J. T.;
Nori, S.; et al., JOURNAL OF APPLIED PHYSICS Volume: 117 Issue: 17 Article Number: 17D908 Published: MAY 7 2015
28) Dependence of Semiconductor to Metal Transition of VO2(011)/NiO{100}/MgO{100}/TiN{100}/Si{100} Heterostructures on Thin Film Epitaxy and Nature of Strain, By: Bayati, Reza; Molaei, Roya; Wu, Fan; et al., JOURNAL OF THE AMERICAN CERAMIC SOCIETY Volume: 98 Issue: 4 Pages: 1201-1208 Published: APR 2015
29) Alloying effect on grain-size dependent deformation twinning in nanocrystalline Cu-Zn alloys, By: Ma, X. L.; Xu, W. Z.; Zhou, H.; et al., PHILOSOPHICAL MAGAZINE Volume: 95 Issue: 3 Pages: 301-310 Published: JAN 22 2015
30) Integration and structural analysis of strain relaxed bi-epitaxial zinc oxide (0001) thin
film with silicon(100) using titanium nitride buffer layer, P. Gupta, J. Narayan, , Journal
of Applied Physics 115, 043513 (2014). 31) Two-dimensional metamaterials for epitaxial heterostructures
By: Zhou, H.; Chisholm, M. F.; Gupta, A.; J. Narayan CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE Volume: 18 Issue: 1 Special Issue: SI Pages: 46-52 Published: FEB 2014
14
32) Ga and Al doped Zinc oxide thin films for transparent conducting oxide applications:
Structure-property correlations, N. K. Temizer, Sudhakar Nori and J. Narayan, Journal
of Applied Physics 115, 023705 (2014).
33) Modification of properties of yttria stabilized zirconia epitaxial thin films, R. Bayati, R.
Molaei, A. Richmond, J. Narayan, ACS Applied Materials and Interfaces 6, 22316
(2014).
34) Magnetic properties of BaTiO3/La0.7Sr0.3MnO3 thin films integrated on Si(100), S.
Rao, F. Wu, JT Prater, J. Narayan, J. Appl. Phys 116, 224104 (2014).
35) Tunable electronic structure in dilute magnetic semiconductor Sr3SnO/c-YSZ/Si(001)
epitaxial heterostructures, YF Lee, J. Narayan and J. Schwartz, J. Appl. Phys. 116,
164903 (2014).
36) Strain induced ferromagnetism in epitaxial Cr2O3 thin films integrated on Si(001), S.
Punugupati, J. Narayan, and F. Hunte, Appl. Phys. Lett. 105, 132401 (2014).
37) Thermal misfit strain relaxation in Ge/(001)Si heterostructures, J. Bharathan, H. Zhou, J.
Narayan, J. Electronic Materials 43, 3196 (2014).
38) Nanosecond laser switching of surface wettability and epitaxial integration of c-axis ZnO
thin films with Si(111) substrates, R. Molaei, M.R. Bayati, H.M. Alipour, N.A. Estrich,
and J. Narayan, Journal of Physics: Condensed Matter. 26, 015004 (2014).
39) Integration of epitaxial permalloy on Si(100) through domain matching epitaxy
paradigm, S.S. Rao, J.T. Prater, F. Wu, Sudhakar Nori, D. Kumar, J. Narayan Curr.
Opin. Solid State Mater. Sci. 18, 1 (2014).
40) Positive exchange bias in epitaxial permalloy/MgO integrated with Si (100), S.S. Rao,
J.T. Prater, F. Wu, Sudhakar Nori, D. Kumar, L. Yue, S.-H. Liou and J. Narayan, Curr.
Opin. Solid State Mater. Sci. (in press) (2014).
41) Oxygen vacancy enhanced room temperature ferromagnetism in Sr3SnO/c-YSZ/Si (001)
heterostructures, Y lee, F. Wu, J. Narayan, J. Schwartz, MRS Communications 4, 7
(2014).
42) A microstructural approach toward the effect of thickness on semiconductor-to-metal
transition of VO2 epitaxial layers, R. Molaei, R. Bayati, F. Wu, and J. Narayan, J. Appl.
Phys 115, 164311(2014).
43) Oxygen vacancy enhanced toom-temperature ferromagnetism in Sr3SnO/c-YSZ/Si(001)
heterostructures, Y. F. Lee, F. Wu, J. Narayan and J. Schwartz, MRS Communications
4(1) 7 (2014).
44) Structural and resistance switching properties of epitaxial Pt/ZnO/TiN/Si(100)
heterostructures, S. Punigupati, N. K. Temizer, J. Narayan, and F. Hunte, J. Appl. Phys.
115 ,234501(2014).
15
45) Evidence for topological surface states in epitaxial Bi2Se3 thin film grown by pulsed
laser deposition through magneto-transport measurements, Y. F. Lee.., J. Narayan and J.
Schwartz, COSSMS 18, 279(2014).
46) Ferroelectric and ferromagnetic properties in BaTiO3 thin films on Si(100), S. S.
Rao,..J.T. Prater and J. Narayan, J. Appl. Phys. 116, 094103 (2014).
47) Laser annealing induced ferromagnetism in SrTiO3 single crystals, S. S. Rao, Y. F. Lee,
J. T. Prater, A. Smirnov and J. Narayan, Applied Physics Letters 105, 042403(2014).
48) Effect of substrate temperature on the physical and corrosion properties of TiN
nanowires grown by pulsed laser deposition, S. Gbordzoe, R. Kotoka, E. Craven, D.
Kumar F. Wu and J. Narayan, J. Appl. Phys. 116, 064310 (2014).
49) Tuning exchange bias in epitaxial Ni/MgO/TiN heterostructures integrated on Si(100),
Fan Wu, S. S. Rao, J. T. Prater, Y. T. Zhu and J. Narayan, COSSMS (2014).
Archival Journal Papers 2001-2013 50) Diamagnetic to ferromagnetic switching in VO2 epitaxial films by nanosecond excimer
laser treatment, R. Molaei, M.R. Bayati, Sudhakar Nori, D. Kumar, J.T. Prater and J.
Narayan, Applied Physics Letters 103, 252109 (2013).
51) Interface Magnetism in Epitaxial BiFeO3‑La0.7Sr0.3MnO3 Heterostructures Integrated on
Si(100), S. S. Rao, J. T. Prater, Fan Wu, C. T. Shelton, J.-P. Maria, and J. Narayan;
Nano Letters 13, 5814 (2013).
52) Correlation between Structure and Semiconductor to Metal Transition Characteristics of
VO2/TiO2/sapphire Thin Film Heterostructures, M.R. Bayati, R. Molaei, F. Wu, J.D.
Budai, Y. Liu, R.J. Narayan, .F. Wu, et al., Acta Materialia 61, 7805 (2013).
53) Crystallographic characteristics and p-type to n-type transition in epitaxial NiO thin film,
R. Molaei, M.R. Bayati, and J. Narayan, , Crystal Growth and Design 13, 5459 (2013).
54) Grain size effect on twin density in as-deposited nanocrystalline Cu film, F. Wu, Y.T.
Zhu and J. Narayan, Philosophical Magazine, 93, 4355 (2013)
55) Twin intersection mechanisms in nanocrystalline fcc metals, F. Wu, H.M. Wen, E.J.
Lavernia, J. Narayan, Y.T. Zhu, Materials Science and Engineering: A 585, 292 (2013).
56) Research Updates: Epitaxial strain relaxation and associated interfacial reconstructions:
The driving force for creating new structures with integrated functionality, Y.Y. Zhu,
A.P. Chen, H. Zhou, W. R. Zhang, J. Narayan, J.L. MacManus-Driscoll, Q. Jia, H.Wang,
APL Materials 1, 050702 (2013).
57) Controlled epitaxial growth of bcc and fcc Cu on MgO for integration on Si, F. Wu and
J. Narayan, Crystal Growth & Design, 13, 5018 (2013).
58) Defect Characterization in Ge/(001)Si Epitaxial Films Grown by Reduced-Pressure
Chemical Vapor Deposition, J. Bharathan, J. Narayan, G. Rozgonyi, G. Bulman, J.
16
Electronic Materials 42, 2888 (2013).
59) Epitaxial integration of dilute magnetic semiconductor Sr3SnO with Si (001), Y.F.
Lee, F. Wu, R. Kumar, F. Hunte, J. Schwartz, and J. Narayan, Appl. Phys. Lett. 103,
112101 (2013).
60) Field-assisted selective-melt sintering: a novel approach to high-density ceramics, J.
Narayan, MRS Commincations 3, 139 (2013).
61) Selective-Melt Sintering Brings Speed and Efficiency to Creating High-Density
Ceramics, J. Narayan, Advanced Materials & Processes 171, 29 (2013).
62) Role of substrate crystallographic characteristics on structure and properties of rutile
TiO2 epilayers, M.R. Bayati, R. Molaei, J.D. Budai, R.J. Narayan and J. Narayan,
Journal of Applied Physics 114, 044314 (2013).
63) FRONTIERS IN THIN FILM EPITAXY AND NANOSTRUCTURED MATERIALS
Introduction, J. Narayan, J. Schwartz, A. Goyal, H. Wang, S. Jin, X. Liao, Journal.
Materials Research 28, 1625 (2013).
64) Low-temperature processing and control of structure and properties of TiO2/c-sapphire
epitaxial heterostructures, M.R. Bayati, S. Joshi, R.J. Narayan and J. Narayan, J.
Materials Research 28, 1669 (2013).
65) Deposition and characterization of nanostructured Cu2O thin-film for potential
photovoltaic applications, N. Gupta, R Singh, F. Wu, J. Narayan, et al., Journal of
Materials Research 28, 1740 (2013).
66) A new mechanism for field-assisted processing and flash sintering of materials, J.
Narayan, Scripta Materialia 69, 107 (2013).
67) Grain size effect on deformation twinning and detwinning, Y.T. Zhu, X. Liao, X. Wu
and J. Narayan, Journal of Materials Research 48, 4467 (2013).
68) Enhanced photocatalytic efficiency in zirconia buffered n-NiO/p-NiO single crystalline
heterostructures by nanosecond laser treatment, R. Molaei, M.R. Bayati, H.M. Alipour,
S. Nori, and J. Narayan, Journal of Applied Physics 113, 233708 (2013).
69) Recent progress in thin film epitaxy across the misfit scale (2011 Acta Gold Medal
Paper), J. Narayan, Acta Materialia 61, 2703 (2013).
70) Misfit accommodation in oxide thin film heterostructures, S.J. Pennycook, H. Zhou,M.F.
Chisholm, A.Y. Borisevich, M. Varela, J. Gazquez, T.J. Pennycook and J. Narayan, Acta
Materialia 61, 2725 (2013).
71) In situ X-ray microdiffraction studies inside individual VO2 microcrystals, J.D. Budai,
A. Tselev, J.Z. Tischler, E. Strelcov, A. Kolmakov, W.J. Liu, A. Gupta and J. Narayan,
Acta Materialia 61, 2751 (2013).
72) Ion-irradiation-induced ferromagnetism in undoped ZnO thin films, S. Mal, S. Nori, J.
Narayan, J.T. Prater,D.K. Avasthi, Acta Materialia 61, 2763 (2013).
73) Grain growth model for electric field-assisted processing and flash sintering of materials,
J. Narayan, Scripta Materialia 68, 785 (2013).
17
74) Thin-Film Epitaxy and Enhancement of Photocatalytic Activity of Anatase/Zirconia
Heterostructures by Nanosecond Excimer Laser Treatment, M.R. Bayati, H.M. Alipour,
S. Joshi, R. Molaei, R.J. Narayan, J. Narayan and S.T. Misture, Journal of Physical
Chemistry C 117, 7138 (2013).
75) Controlled epitaxial integration of polar ZnO(0001) with Si(001), R. Molaei, M.R.
Bayati, H.M. Alipour, and J. Narayan, Applied Physics Letters 102, 101602 (2013).
76) A New Class of Room-Temperature Multiferroic Thin Films with Bismuth-Based
Supercell Structure, A.P. Chen, H.H. Zhou, Z. Bi,Y.Y. Zhu,.. J. Narayan et al. Advanced
Materials 25, 1028 (2013).
77) Ultrafast switching in wetting properties of TiO2/YSZ/Si(001) epitaxial heterostructures
induced by laser irradiation, M.R. Bayati, S. Joshi, R. Molaei, R.J. Narayan and J.
Narayan, Journal of Applied Physics 113, 063706 (2013).
78) Poisson Ratio of Epitaxial Germanium Films Grown on Silicon ,J. Bharathan, J.
Narayan, G. Rozgonyi, G. Bulman, J. Electronic Materials 42, 40 (2013).
79) Macroscopic strain caused by twinning in multilayer Cu/Ta thin films, F. Wu, Y.T. Zhu,
J. Narayan, Materials Research letters, 2 63 (2013).
80) Epitaxial integration of topological insulator SrSnO with c-YSZ/Si(001), Y. lee, F. Wu,
J. Narayan, et al., Applied Physics Letters, 103 112101 (2013).
81) Ultrafast switching in wetting properties of TiO2/YSZ/Si(001) epitaxial heterostructures induced by
laser irradiation: Author(s): Bayati, M. R.; Joshi, S.; Molaei, R.; et al.: Source: JOURNAL OF APPLIED
PHYSICS Volume: 113 Issue: 6 Article Number: 063706 DOI: 10.1063/1.4790327, FEB 14 2013
82) Poisson Ratio of Epitaxial Germanium Films Grown on Silicon: Author(s): Bharathan,
Jayesh; Narayan, Jagdish; Rozgonyi, George; et al.: Source: JOURNAL OF ELECTRONIC
MATERIALS Volume: 42 Issue: 1 Pages: 40-46 DOI: 10.1007/s11664-012-2337-6 Published: JAN
2013
83) Defect mediated reversible ferromagnetism in Co and Mn doped zinc oxide epitaxial films:
Author(s): Mal, Siddhartha; Nori, Sudhakar; Mula, Suhrit; et al.: Source: JOURNAL OF APPLIED
PHYSICS Volume: 112 Issue: 11 Article
Number: 113917 DOI: 10.1063/1.4768721 Published: DEC 1 2012
84) Thin film epitaxy and near bulk semiconductor to metal transition in VO2/NiO/YSZ/Si(001)
heterostructures: Author(s): Molaei, Roya; Bayati, Mohammad Reza; Narayan, Jagdish:
Source: JOURNAL OF MATERIALS RESEARCH Volume: 27 Issue: 24 Pages: 3103-
3109 DOI: 10.1557/jmr.2012.374: DEC 2012
85) Defect mediated photocatalytic decomposition of 4-chlorophenol on epitaxial rutile thin films under
visible and UV illumination: Author(s): Bayati, M. R.; Ding, J.; Lee, Y. F.; et al.: Source: JOURNAL OF
PHYSICS-CONDENSED MATTER Volume: 24 Issue: 39 Article
Number: 395005 DOI: 10.1088/0953-8984/24/39/395005 Published: OCT 3 2012
86) Nanoscience to nanotechnology to manufacturing transition: Author(s): Narayan, Jagdish:
Source: INTERNATIONAL JOURNAL OF NANOTECHNOLOGY Volume: 9 Issue: 10-12 Special
18
Issue: SI Pages: 914-941 DOI: 10.1504/IJNT.2012.049456 Published: 2012
1. Controlled p-type to n-type conductivity transformation in NiO thin films by ultraviolet-laser
irradiation
Author(s): Gupta Pranav; Dutta Titas; Mal Siddhartha; J. Narayan et al.
Source: JOURNAL OF APPLIED PHYSICS Volume: 111 Issue: 1 Article Number: 013706 DOI:
10.1063/1.3671412 Published: JAN 1 2012
2. Defects in room-temperature ferromagnetic Cu-doped ZnO films probed by x-ray absorption
spectroscopy Author(s): Ma, Q.; Prater, J. T.; Sudakar, C.; et al.; Source: JOURNAL OF PHYSICS-
CONDENSED MATTER Volume: 24 Issue: 30 Article Number: 306002 DOI: 10.1088/0953-
8984/24/30/306002 Published: AUG 1 2012
3. Domain epitaxy in TiO2/alpha-Al2O3 thin film heterostructures with Ti2O3 transient layer; Author(s):
Bayati, M. R.; Molaei, R.; Narayan, J.; et al,Source: APPLIED PHYSICS LETTERS Volume: 100 Issue: 25
Article Number: 251606 DOI: 10.1063/1.4729937 Published: JUN 18 2012
4. Structure-property correlation in epitaxial (200) rutile films on sapphire substrates Author(s): Bayati, M.
R.; Joshi, Sh; Molaei, R.; et al.; Source: JOURNAL OF SOLID STATE CHEMISTRY Volume: 187 Pages:
231-237 DOI: 10.1016/j.jssc.2012.01.031 Published: MAR 2012
5. Thin film epitaxy and magnetic properties of STO/TiN buffered ZnO on Si(0 0 1) substrates
Author(s): Mal Siddhartha; Yang Tsung-Han; Gupta P.; J. Narayan et al.
Source: ACTA MATERIALIA Volume: 60 Issue: 1 Pages: 457-457 DOI: 10.1016/j.actamat.2011.08.010
Published: JAN 2012
6. Role of interfacial transition layers in VO2/Al2O3 heterostructures
Author(s): Zhou H.; Chisholm M. F.; Yang Tsung-Han; et al.
Source: JOURNAL OF APPLIED PHYSICS Volume: 110 Issue: 7 Article Number: 073515 DOI:
10.1063/1.3642980 Published: OCT 1 2011
7. d(0) Ferromagnetism in undoped ZnO thin films: Effect of thickness, interface and oxygen annealing
Author(s): Mal Siddhartha; Yang Tsung-Han; Jin Chunming; et al.
Source: SCRIPTA MATERIALIA Volume: 65 Issue: 12 Pages: 1061-1064 DOI:
10.1016/j.scriptamat.2011.09.016 Published: DEC 2011
8. Intrinsic Room-Temperature Ferromagnetic Properties of Ni-Doped ZnO Thin Films
Author(s): Jin C.; Aggarwal R.; Wei W.; et al.
Source: METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND
MATERIALS SCIENCE Volume: 42A Issue: 11 Pages: 3250-3254 DOI: 10.1007/s11661-010-0479-9
Published: NOV 2011
9. VO2 Thin Films: Defect Mediation in Room Temperature Ferromagnetic Switching Characteristics
Author(s): Nori Sudhakar; Yang T. -H.; Narayan Jagdish
Source: JOM Volume: 63 Issue: 10 Pages: 29-33 Published: OCT 2011
10. Control of room-temperature defect-mediated ferromagnetism in VO(2) films
Author(s): Yang Tsung-Han; Nori Sudhakar; Mal Siddhartha; et al.
Source: ACTA MATERIALIA Volume: 59 Issue: 16 Pages: 6362-6368 DOI:
10.1016/j.actamat.2011.06.047 Published: SEP 2011
19
11. Defect-mediated ferromagnetism and controlled switching characteristics in ZnO
Author(s): Mal Siddhartha; Nori Sudhakar; Narayan Jagdish; et al.
Source: JOURNAL OF MATERIALS RESEARCH Volume: 26 Issue: 10 Pages: 1298-1308 DOI:
10.1557/jmr.2011.74 Published: MAY 2011
12. Thin film epitaxy and magnetic properties of STO/TiN buffered ZnO on Si(001) substrates
Author(s): Mal Siddhartha; Yang Tsung-Han; Gupta P.; et al.
Source: ACTA MATERIALIA Volume: 59 Issue: 6 Pages: 2526-2534 DOI:
10.1016/j.actamat.2010.12.058 Published: APR 2011
13. Epitaxial VO(2)/Cr(2)O(3)/sapphire heterostructure for multifunctional applications
Author(s): Yang Tsung-Han; Mal S.; Jin C.; et al.
Source: APPLIED PHYSICS LETTERS Volume: 98 Issue: 2 Article Number: 022105 DOI:
10.1063/1.3541649 Published: JAN 10 2011
14. SELF-ASSEMBLY AND DIRECTED ASSEMBLY OF ADVANCED MATERIALS Introduction
Author(s): Goyal Amit; Narayan Jagdish; Lin Qinghuang
Source: JOURNAL OF MATERIALS RESEARCH Volume: 26 Issue: 2 Pages: 109-110 DOI:
10.1557/jmr.2010.103 Published: JAN 2011
15. Dislocation-twin interactions in nanocrystalline fcc metals
Author(s): Zhu Y. T.; Wu X. L.; Liao X. Z.; et al.
Source: ACTA MATERIALIA Volume: 59 Issue: 2 Pages: 812-821 DOI: 10.1016/j.actamat.2010.10.028
Published: JAN 2011
16. Effect of Li doping in NiO thin films on its transparent and conducting properties and its application in
heteroepitaxial p-n junctions
Author(s): Dutta Titas; Gupta P.; Gupta A.; et al.
Source: JOURNAL OF APPLIED PHYSICS Volume: 108 Issue: 8 Article Number: 083715 DOI:
10.1063/1.3499276 Published: OCT 15 2010
17. Near bulk semiconductor to metal transition in epitaxial VO(2) thin films
Author(s): Gupta Alok; Narayan Jagdish; Dutta Titas
Source: APPLIED PHYSICS LETTERS Volume: 97 Issue: 15 Article Number: 151912 DOI:
10.1063/1.3503632 Published: OCT 11 2010
18. Reversible room temperature ferromagnetism in undoped zinc oxide: Correlation between defects and
physical properties
Author(s): Mal Siddhartha; Nori Sudhakar; Jin Chunming; et al.
Source: JOURNAL OF APPLIED PHYSICS Volume: 108 Issue: 7 Article Number: 073510 DOI:
10.1063/1.3491037 Published: OCT 1 2010
19. Atomic structure of misfit dislocations in nonpolar ZnO/Al(2)O(3) heterostructures
Author(s): Zhou H.; Chisholm M. F.; Pant P.; et al.
Source: APPLIED PHYSICS LETTERS Volume: 97 Issue: 12 Article Number: 121914 DOI:
10.1063/1.3489687 Published: SEP 20 2010
20. Defect-mediated room temperature ferromagnetism in zinc oxide
Author(s): Mal Siddhartha; Narayan J.; Nori Sudhakar; et al.
Source: SOLID STATE COMMUNICATIONS Volume: 150 Issue: 35-36 Pages: 1660-1664 DOI:
20
10.1016/j.ssc.2010.06.030 Published: SEP 2010
21. Role of twin boundaries in semiconductor to metal transition characteristics of VO(2) films
Author(s): Yang Tsung-Han; Jin Chunming; Zhou Honghui; et al.
Source: APPLIED PHYSICS LETTERS Volume: 97 Issue: 7 Article Number: 072101 DOI:
10.1063/1.3481075 Published: AUG 16 2010
22. Mott transition in Ga-doped Mg(x)Zn(1-x)O: A direct observation
Author(s): Wei Wei; Nori Sudhakar; Jin Chunming; et al.
Source: MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE
MATERIALS Volume: 171 Issue: 1-3 Pages: 90-92 DOI: 10.1016/j.mseb.2010.03.078 Published: JUL
25 2010
23. Semipolar r-plane ZnO films on Si(100) substrates: Thin film epitaxy and optical properties
Author(s): Aggarwal Ravi; Zhou Honghui; Jin Chunming; et al.
Source: JOURNAL OF APPLIED PHYSICS Volume: 107 Issue: 11 Article Number: 113530 DOI:
10.1063/1.3406260 Published: JUN 1 2010
24. High work function (p-type NiO(1+x))/Zn(0.95)Ga(0.05)O heterostructures for transparent conducting
oxides
Author(s): Dutta Titas; Gupta Pranav; Gupta Alok; et al.
Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 43 Issue: 10 Article Number: 105301
DOI: 10.1088/0022-3727/43/10/105301 Published: MAR 17 2010
25. On growth of epitaxial vanadium oxide thin film on sapphire (0001)
Author(s): Yang Tsung-Han; Jin Chunming; Aggarwal Ravi; et al.
Source: JOURNAL OF MATERIALS RESEARCH Volume: 25 Issue: 3 Pages: 422-426 DOI:
10.1557/JMR.2010.0059 Published: MAR 2010
26. Semiconductor-metal transition characteristics of VO(2) thin films grown on c- and r-sapphire
substrates
Author(s): Yang Tsung-Han; Aggarwal Ravi; Gupta Alok; et al.
Source: JOURNAL OF APPLIED PHYSICS Volume: 107 Issue: 5 Article Number: 053514 DOI:
10.1063/1.3327241 Published: MAR 1 2010
27. Nonpolar ZnO film growth and mechanism for anisotropic in-plane strain relaxation
Author(s): Pant P.; Budai J. D.; Narayan J.
Source: ACTA MATERIALIA Volume: 58 Issue: 3 Pages: 1097-1103 DOI:
10.1016/j.actamat.2009.10.026 Published: FEB 2010
28. Optical and electrical properties of gallium-doped Mg(x)Zn(1-x)O
Author(s): Wei Wei; Jin Chunming; Narayan Jagdish; et al.
Source: JOURNAL OF APPLIED PHYSICS Volume: 107 Issue: 1 Article Number: 013510 DOI:
10.1063/1.3271415 Published: JAN 1 2010
29. Effect of annealing on atomic ordering of amorphous ZrTaTiNbSi alloy
Author(s): Yang Tsung-Han; Huang Rong-Tang; Wu Cheng-An; et al.
Source: APPLIED PHYSICS LETTERS Volume: 95 Issue: 24 Article Number: 241905 DOI:
10.1063/1.3273387 Published: DEC 14 2009
21
30. Optical and electrical properties of bandgap engineered gallium-doped Mg(x)Zn(1-x)O films
Author(s): Wei Wei; Jin Chunming; Narayan Jagdish; et al.
Source: SOLID STATE COMMUNICATIONS Volume: 149 Issue: 39-40 Pages: 1670-1673 DOI:
10.1016/j.ssc.2009.06.021 Published: OCT 2009
31. Semiconductor to metal transition characteristics of VO(2) thin films grown epitaxially on Si (001)
Author(s): Gupta A.; Aggarwal R.; Gupta P.; et al.
Source: APPLIED PHYSICS LETTERS Volume: 95 Issue: 11 Article Number: 111915 DOI:
10.1063/1.3232241 Published: SEP 14 2009
32. Defect-mediated room temperature ferromagnetism in vanadium dioxide thin films
Author(s): Yang Tsung-Han; Nori Sudhakar; Zhou Honghui; et al.
Source: APPLIED PHYSICS LETTERS Volume: 95 Issue: 10 Article Number: 102506 DOI:
10.1063/1.3224202 Published: SEP 7 2009
33. Thin film epitaxy and structure property correlations for non-polar ZnO films
Author(s): Pant P.; Budai J. D.; Aggarwal R.; et al.
Source: ACTA MATERIALIA Volume: 57 Issue: 15 Pages: 4426-4431 DOI:
10.1016/j.actamat.2009.05.031 Published: SEP 2009
34. Raman studies of GaN/sapphire thin film heterostructures
Author(s): Hushur Anwar; Manghnani Murli H.; Narayan Jagdish
Source: JOURNAL OF APPLIED PHYSICS Volume: 106 Issue: 5 Article Number: 054317 DOI:
10.1063/1.3213370 Published: SEP 1 2009
35. Formation of single and multiple deformation twins in nanocrystalline fcc metals
Author(s): Zhu Y. T.; Narayan J.; Hirth J. P.; et al.
Source: ACTA MATERIALIA Volume: 57 Issue: 13 Pages: 3763-3770 DOI:
10.1016/j.actamat.2009.04.020 Published: AUG 2009
36. Twinning partial multiplication at grain boundary in nanocrystalline fcc metals
Author(s): Zhu Y. T.; Wu X. L.; Liao X. Z.; et al.
Source: APPLIED PHYSICS LETTERS Volume: 95 Issue: 3 Article Number: 031909 DOI:
10.1063/1.3187539 Published: JUL 20 2009
37. Magnetic Properties of Self-Assembled Ni Nanoparticles in Two Dimensional Structures
Author(s): Gupta A.; Narayan J.; Kumar Dhananjay
Source: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY Volume: 9 Issue: 6 Pages: 3993-
3996 DOI: 10.1166/jnn.2009.214 Published: JUN 2009
38. The synthesis and magnetic properties of a nanostructured Ni-MgO system
Author(s): Narayan J.; Nori Sudhakar; Ramachandran S.; et al.
Source: JOM Volume: 61 Issue: 6 Pages: 76-81 DOI: 10.1007/s11837-009-0093-8 Published: JUN 2009
39. Structural characterization of two-step growth of epitaxial ZnO films on sapphire substrates at low
temperatures
Author(s): Pant P.; Budai J. D.; Aggarwal R.; et al.
Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 42 Issue: 10 Article Number: 105409
DOI: 10.1088/0022-3727/42/10/105409 Published: MAY 21 2009
22
40. Magnetic properties and their dependence on deposition parameters of Co/Al(2)O(3) multilayers grown
by pulsed laser deposition
Author(s): Aggarwal Ravi; Nori Sudhakar; Jin Chunming; et al.
Source: ACTA MATERIALIA Volume: 57 Issue: 6 Pages: 2040-2046 DOI:
10.1016/j.actamat.2009.01.018 Published: APR 2009
41. MoO(x) modified ZnGaO based transparent conducting oxides
Author(s): Dutta Titas; Gupta P.; Bhosle V.; et al.
Source: JOURNAL OF APPLIED PHYSICS Volume: 105 Issue: 5 Article Number: 053704 DOI:
10.1063/1.3078812 Published: MAR 1 2009
42. Plasma plume dynamics in magnetically assisted pulsed laser deposition
Author(s): Haverkamp J. D.; Bourham M. A.; Du S.; et al.
Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 42 Issue: 2 Article Number: 025201
DOI: 10.1088/0022-3727/42/2/025201 Published: JAN 21 2009
43. New frontier in thin film epitaxy and nanostructured materials
Author(s): Narayan Jagdish
Source: INTERNATIONAL JOURNAL OF NANOTECHNOLOGY Volume: 6 Issue: 5-6 Pages: 493-510
Published: 2009
44. Growth of biepitaxial zinc oxide thin films on silicon (100) using yttria-stabilized zirconia buffer layer
Author(s): Aggarwal Ravi; Jin Chunming; Pant Punam; et al.
Source: APPLIED PHYSICS LETTERS Volume: 93 Issue: 25 Article Number: 251905 DOI:
10.1063/1.3050529 Published: DEC 22 2008
45. Defect dependent ferromagnetism in MgO doped with Ni and Co
Author(s): Narayan J.; Nori Sudhakar; Pandya D. K.; et al.
Source: APPLIED PHYSICS LETTERS Volume: 93 Issue: 8 Article Number: 082507 DOI:
10.1063/1.2977614 Published: AUG 25 2008
46. Deformation twin formed by self-thickening, cross-slip mechanism in nanocrystalline Ni Author(s): Wu
X. L.; Narayan J.; Zhu Y. T.
Source: APPLIED PHYSICS LETTERS Volume: 93 Issue: 3 Article Number: 031910 DOI:
10.1063/1.2949685 Published: JUL 21 2008
47. Observation of room temperature ferromagnetism in Ga : ZnO: A transition metal free transparent
ferromagnetic conductor
Author(s): Bhosle V.; Narayan J.
Source: APPLIED PHYSICS LETTERS Volume: 93 Issue: 2 Article Number: 021912 DOI:
10.1063/1.2953705 Published: JUL 14 2008
48. Plasma instabilities in magnetically assisted pulsed laser deposition
Author(s): Haverkamp J. D.; Bourham M. A.; Du S.; et al.
Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 41 Issue: 11 Article Number: 115206
DOI: 10.1088/0022-3727/41/11/115206 Published: JUN 7 2008
49. Self-thickening, cross-slip deformation twinning model
Author(s): Narayan J.; Zhu Y. T.
Source: APPLIED PHYSICS LETTERS Volume: 92 Issue: 15 Article Number: 151908 DOI:
23
10.1063/1.2911735 Published: APR 14 2008
50. Structure-magnetic property correlations in the epitaxial FePt system
Author(s): Trichy G. R.; Chakraborti D.; Narayan J.; et al.
Source: APPLIED PHYSICS LETTERS Volume: 92 Issue: 10 Article Number: 102504 DOI:
10.1063/1.2883933 Published: MAR 10 2008
51. Magnetic properties of epitaxial oxide heterostructures
Author(s): Ramachandran S.; Prater J. T.; Sudhakar N.; et al.
Source: SOLID STATE COMMUNICATIONS Volume: 145 Issue: 1-2 Pages: 18-22 DOI:
10.1016/j.ssc.2007.10.005 Published: JAN 2008
52. The effect of oxygen annealing on ZnO : Cu and ZnO :(Cu,Al) diluted magnetic semiconductors
Author(s): Chakraborti D.; Trichy G. R.; Prater J. T.; et al.
Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 40 Issue: 24 Pages: 7606-7613 DOI:
10.1088/0022-3727/40/24/002 Published: DEC 21 2007
53. Epitaxial FePt thin films and nanodots integrated with Si (1 0 0)
Author(s): Trichy G. R.; Chakraborti D.; Narayan J.; et al.
Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 40 Issue: 23 Pages: 7273-7280 DOI:
10.1088/0022-3727/40/23/003 Published: DEC 7 2007
54. Effect of Al doping on the magnetic and electrical properties of Zn(Cu)O based diluted magnetic
semiconductors
Author(s): Chakraborti D.; Trichy G.; Narayan J.; et al.
Source: JOURNAL OF APPLIED PHYSICS Volume: 102 Issue: 11 Article Number: 113908 DOI:
10.1063/1.2817824 Published: DEC 1 2007
55. Nanostructured GaN nucleation layer for light-emitting diodes
Author(s): Narayan J.; Pant P.; Wei W.; et al.
Source: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY Volume: 7 Issue: 8 Pages: 2719-
2725 DOI: 10.1166/jnn.2007.670 Published: AUG 2007
56. Growth, characterization, and magnetic properties of FePt nanodots on Si (100)
Author(s): Trichy G. R.; Chakraborti D.; Narayan J.; et al.
Source: JOURNAL OF APPLIED PHYSICS Volume: 102 Issue: 3 Article Number: 033901 DOI:
10.1063/1.2761832 Published: AUG 1 2007
57. Gallium-doped zinc oxide films as transparent electrodes for organic solar cell applications
Author(s): Bhosle V.; Prater J. T.; Yang Fan; et al.
Source: JOURNAL OF APPLIED PHYSICS Volume: 102 Issue: 2 Article Number: 023501 DOI:
10.1063/1.2750410 Published: JUL 15 2007
58. Anisotropic magnetic properties in [110] oriented epitaxial La0.7Sr0.3MnO3 films on (0001) sapphire
Author(s): Bhosle V.; Prater J. T.; Narayan J.
Source: JOURNAL OF APPLIED PHYSICS Volume: 102 Issue: 1 Article Number: 013527 DOI:
10.1063/1.2751118 Published: JUL 1 2007
59. Room temperature ferromagnetism and magnetotransport properties of the layered manganite system
La1.2Ba1.8Mn2-xRuxO7 (0 <= x <= 1-0)
24
Author(s): Sudhakar N.; Rajeev K. P.; Tiwari A.; et al.
Source: SOLID STATE COMMUNICATIONS Volume: 142 Issue: 9 Pages: 519-524 DOI:
10.1016/j.ssc.2007.03.041 Published: JUN 2007
60. Magnetic properties of Ni-doped MgO diluted magnetic insulators
Author(s): Ramachandrana S.; Narayan J.; Prater J. T.
Source: APPLIED PHYSICS LETTERS Volume: 90 Issue: 13 Article Number: 132511 DOI:
10.1063/1.2717574 Published: MAR 26 2007
61. Epitaxial growth and magnetic properties of La0.7Sr0.3MnO3 films on (0001) sapphire
Author(s): Bhosle V.; Narayan J.
Source: APPLIED PHYSICS LETTERS Volume: 90 Issue: 10 Article Number: 101903 DOI:
10.1063/1.2472537 Published: MAR 5 2007
62. Structural, magnetic, and electron transport studies on nanocrystalline layered manganite
La1.2Ba1.8Mn2O7 system
Author(s): Sudhakar N.; Ningthoujam R. S.; Rajeev K. P.; et al.
Conference: International Symposium on Soft-Nanotechnology Location: Hokkaido Univ, Sapporo,
JAPAN Date: 2005
Source: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY Volume: 7 Issue: 3 Pages: 965-969
DOI: 10.1166/jnn.2007.405 Published: MAR 2007
63. Structural, magnetic, and electron transport studies on nanocrystalline layered manganite
La1.2Ba1.8Mn2O7 system
Author(s): Sudhakar N.; Ningthoujam R. S.; Rajeev K. P.; et al.
Source: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY Volume: 7 Issue: 3 Pages: 965-969
DOI: 10.1166/jnn.2007.405 Published: MAR 2007
64. Magnetic, electrical, and microstructural characterization of ZnO thin films codoped with Co and Cu
Author(s): Chakraborti D.; Ramachandran S.; Trichy G.; et al.
Source: JOURNAL OF APPLIED PHYSICS Volume: 101 Issue: 5 Article Number: 053918 DOI:
10.1063/1.2711082 Published: MAR 1 2007
65. Room temperature ferromagnetism in Zn1-xCuxO thin films
Author(s): Chakraborti D.; Narayan J.; Prater J. T.
Source: APPLIED PHYSICS LETTERS Volume: 90 Issue: 6 Article Number: 062504 DOI:
10.1063/1.2450652 Published: FEB 5 2007
66. Photoluminescence study of ZnO films codoped with nitrogen and tellurium
Author(s): Porter HL, Muth JF, Narayan J, et al.
Source: JOURNAL OF APPLIED PHYSICS Volume: 100 Issue: 12 Article Number: 123102 Published:
DEC 15 2006
67. Transmission electron microscopy observations on the microstructure of naturally aged Al-Mg-Si alloy
AA6022 processed with an electric field
Author(s): Conrad H, Ramachandran S, Jung K, et al.
Source: JOURNAL OF MATERIALS SCIENCE Volume: 41 Issue: 22 Pages: 7555-7561 Published:
NOV 2006
68. Phase transition and critical issues in structure-property correlations of vanadium oxide
25
Author(s): Narayan J, Bhosle VM
Source: JOURNAL OF APPLIED PHYSICS Volume: 100 Issue: 10 Article Number: 103524 Published:
NOV 15 2006
69. Microstructure and electrical property correlations in Ga : ZnO transparent conducting thin films
Author(s): Bhosle V, Narayan J
Source: JOURNAL OF APPLIED PHYSICS Volume: 100 Issue: 9 Article Number: 093519 Published:
NOV 1 2006
70. Regular and high resolution transmission electron microscopy observations on the precipitates in a naturally
aged Al-Mg-Si alloy AA6022
Author(s): Ramachandran S, Jung K, Narayan J, et al.
Source: MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES
MICROSTRUCTURE AND PROCESSING Volume: 435 Pages: 693-697 Published: NOV 5 2006
71. Methods for processing tantalum films of controlled microstructures and properties
Author(s): Narayan J, Bhosle V, Tiwari A, et al.
Source: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A Volume: 24 Issue: 5 Pages: 1948-
1954 Published: SEP-OCT 2006
72. L1(0) ordered epitaxial FePt (001) thin films on TiN/Si (100) by pulsed laser deposition
Author(s): Trichy GR, Narayan J, Zhou H
Source: APPLIED PHYSICS LETTERS Volume: 89 Issue: 13 Article Number: 132502 Published: SEP 25
2006
73. Electrical properties of transparent and conducting Ga doped ZnO
Author(s): Bhosle V, Tiwari A, Narayan J
Source: JOURNAL OF APPLIED PHYSICS Volume: 100 Issue: 3 Article Number: 033713 Published:
AUG 1 2006
74. Critical size for defects in nanostructured materials
Author(s): Narayan J
Source: JOURNAL OF APPLIED PHYSICS Volume: 100 Issue: 3 Article Number: 034309 Published:
AUG 1 2006
75. Effect of oxygen annealing on Mn doped ZnO diluted magnetic semiconductors
Author(s): Ramachandran S, Narayan J, Prater JT
Source: APPLIED PHYSICS LETTERS Volume: 88 Issue: 24 Article Number: 242503 Published: JUN 12
2000
76. Growth of highly conducting epitaxial ZnO-Pt-ZnO heterostructure on alpha-Al2O3 (0001)
Author(s): Ramachandran S, Chugh A, Tiwari A, et al.
Source: JOURNAL OF CRYSTAL GROWTH Volume: 291 Issue: 1 Pages: 212-217 Published: MAY 15
2006
77. Epitaxial ZnO/Pt layered structures and ZnO-Pt nanodot composites on sapphire (0001)
Author(s): Chugh A, Ramachandran S, Tiwari A, et al.
Source: JOURNAL OF ELECTRONIC MATERIALS Volume: 35 Issue: 5 Pages: 840-845 Published:
MAY 2006
26
78. Co-doped ZnO dilute magnetic semiconductor
Author(s): Prater JT, Ramachandran S, Tiwari A, et al.
Source: JOURNAL OF ELECTRONIC MATERIALS Volume: 35 Issue: 5 Pages: 852-856 Published:
MAY 2006
79. Ferromagnetism in Co doped CeO2: Observation of a giant magnetic moment with a high Curie
temperature
Author(s): Tiwari A, Bhosle VM, Ramachandran S, et al.
Source: APPLIED PHYSICS LETTERS Volume: 88 Issue: 14 Article Number: 142511 Published: APR 3
2006
80. Growth and observation of low-field giant magnetoresistance in La0.7Sr0.3MnO3/ZnO superlattice
structures
Author(s): Tiwari A, Narayan J
Source: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY Volume: 6 Issue: 3 Pages: 612-
617 Published: MAR 2006
81. Characteristics of nucleation layer and epitaxy in GaN/sapphire heterostructures
Author(s): Narayan J, Pant P, Chugh A, et al.
Source: JOURNAL OF APPLIED PHYSICS Volume: 99 Issue: 5 Article Number: 054313 Published:
MAR 1 2006
82. Metallic conductivity and metal-semiconductor transition in Ga-doped ZnO
Author(s): Bhosle V, Tiwari A, Narayan J
Source: APPLIED PHYSICS LETTERS Volume: 88 Issue: 3 Article Number: 032106 Published: JAN 16
2006
83. Epitaxial growth and properties of Zn1-xVxO diluted magnetic semiconductor thin films
Author(s): Ramachandran S, Tiwari A, Narayan J, et al.
Source: APPLIED PHYSICS LETTERS Volume: 87 Issue: 17 Article Number: 172502 Published: OCT
24 2005
84. Grain size softening in nanocrystalline TiN
Author(s): Conrad H, Narayan J, Jung K
Source: INTERNATIONAL JOURNAL OF REFRACTORY METALS & HARD MATERIALS Volume: 23
Issue: 4-6 Pages: 301-305 Published: 2005
85. Enhanced photoconductivity of ZnO films Co-doped with nitrogen and tellurium
Author(s): Porter HL, Cai AL, Muth JF, et al.
Source: APPLIED PHYSICS LETTERS Volume: 86 Issue: 21 Article Number: 211918 Published: MAY
23 2005
86. Epitaxial growth and properties of MoOx(2 < x < 2.75) films
Author(s): Bhosle V, Tiwari A, Narayan J
Source: JOURNAL OF APPLIED PHYSICS Volume: 97 Issue: 8 Article Number: 083539 Published:
APR 15 2005
87. Epitaxial growth of zinc oxide thin films on silicon
Author(s): Jin CM, Narayan R, Tiwari A, et al.
Source: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED
27
TECHNOLOGY Volume: 117 Issue: 3 Pages: 348-354 Published: MAR 25 2005
88. Electrical transport in ZnO(1-delta)films: Transition from band-gap insulator to Anderson localized
insulator (vol 96, pg 3827, 2004)
Author(s): Tiwari A, Jin C, Narayan J, et al.
Source: JOURNAL OF APPLIED PHYSICS Volume: 97 Issue: 5 Article Number: 059902 Published:
MAR 1 2005
89. Effect of UV/VUV enhanced RTP on process variation and device performance of metal gate high-kappa
gate stacks for the sub-90-nm CMOS regime
Author(s): Damjanovic D, Bolla HK, Singh R, et al.
Source: IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING Volume: 18 Issue: 1
Pages: 55-62 Published: FEB 2005
90. New frontiers in thin film growth and nanomaterials
Author(s): Narayan J
Source: METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND
MATERIALS SCIENCE Volume: 36A Issue: 2 Pages: 277-294 Published: FEB 2005
91. Growth of single-phase c-axis aligned La1.2Ca1.8Mn2O7 films on SrTiO3(001)
Author(s): Tiwari A, Narayan J, Sudhakar N, et al.
Source: SOLID STATE COMMUNICATIONS Volume: 132 Issue: 12 Pages: 863-866 Published: DEC
2004
92. Origin of room-temperature ferromagnetism in cobalt-doped ZnO
Author(s): Ramachandran S, Tiwari A, Narayan J
Source: JOURNAL OF ELECTRONIC MATERIALS Volume: 33 Issue: 11 Pages: 1298-1302 Published:
NOV 2004
93. Novel methods of forming self-assembled nanostructured materials: Ni nanodots in Al2O3 and TiN
matrices
Author(s): Narayan J, Tiwari A
Source: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY Volume: 4 Issue: 7 Pages: 726-
732 Published: SEP 2004
94. Electrical transport in ZnO1-delta films: Transition from band-gap insulator to Anderson localized
insulator
Author(s): Tiwari A, Jin C, Narayan J, et al.
Source: JOURNAL OF APPLIED PHYSICS Volume: 96 Issue: 7 Pages: 3827-3830 Published: OCT 1
2004
95. The effect of interfacial layers on high-performance gate dielectrics processed by RTP-ALD
Author(s): Fakhruddin M, Singh R, Poole KF, et al.
Source: JOURNAL OF THE ELECTROCHEMICAL SOCIETY Volume: 151 Issue: 8 Pages: G507-G511
Published: 2004
96. Epitaxial GaN on Si(111): Process control of SiNx interlayer formation
Author(s): Rawdanowicz TA, Narayan J
Source: APPLIED PHYSICS LETTERS Volume: 85 Issue: 1 Pages: 133-135 Published: JUL 5 2004
28
97. Zn0.9Co0.1O-based diluted magnetic semiconducting thin films
Author(s): Ramachandran S, Tiwari A, Narayan J
Source: APPLIED PHYSICS LETTERS Volume: 84 Issue: 25 Pages: 5255-5257 Published: JUN 21 2004
98. Pulsed laser deposition assisted novel synthesis of self-assembled magnetic nanoparticles
Author(s): Kumar D, Yarmolenko S, Sarkar J, et al.
Source: COMPOSITES PART B-ENGINEERING Volume: 35 Issue: 2 Pages: 149-155 Published: 2004
99. TaN-TiN binary alloys and superlattices as diffusion barriers for copper interconnections (vol 33, pg 1,
2004)
Author(s): Wang H, Gupta A, Tiwari A, et al.
Source: JOURNAL OF ELECTRONIC MATERIALS Volume: 33 Issue: 1 Pages: L5-L5 Published: JAN
2004
100. Role of self-assembled gold nanodots in improving the electrical and optical characteristics of zinc oxide
films
Author(s): Tiwari A, Chugh A, Jin C, et al.
Source: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY Volume: 3 Issue: 5 Pages: 368-
371 Published: OCT 2003
101. TaN-TiN binary alloys and superlattices as diffusion barriers for copper interconnects
Author(s): Wang H, Gupta A, Tiwari A, et al.
Source: JOURNAL OF ELECTRONIC MATERIALS Volume: 32 Issue: 10 Pages: 994-999 Published:
OCT 2003
102. Growth and characteristics of TaN/TiN superlattice structures
Author(s): Wang H, Zhang X, Gupta A, et al.
Source: APPLIED PHYSICS LETTERS Volume: 83 Issue: 15 Pages: 3072-3074 Published: OCT 13
2003
103. Formation of self-assembled epitaxial nickel nanostructures
Author(s): Zhou H, Kumar D, Kvit A, et al.
Source: JOURNAL OF APPLIED PHYSICS Volume: 94 Issue: 8 Pages: 4841-4846 Published: OCT 15
2003
104. A novel technique for making self-encapsulated and self-aligned copper films
Author(s): Chugh A, Tiwari A, Kvit A, et al.
Source: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED
TECHNOLOGY Volume: 103 Issue: 1 Pages: 45-48 Published: SEP 25 2003
105. Rectifying electrical characteristics of La0.7Sr0.3MnO3/ZnO heterostructure
Author(s): Tiwari A, Jin C, Kumar D, et al.
Source: APPLIED PHYSICS LETTERS Volume: 83 Issue: 9 Pages: 1773-1775 Published: SEP 1 2003
106. Synthesis of bulk nanostructured Zn by combinations of cryomilling and powder consolidation by room
temperature milling: optimizing mechanical properties
Author(s): Zhu XK, Zhang X, Wang H, et al.
Source: SCRIPTA MATERIALIA Volume: 49 Issue: 5 Pages: 429-433 Published: SEP 2003
107. Role of silver addition in the synthesis of high critical current density MgB2 bulk superconductors
29
Author(s): Kumar D, Pennycook SJ, Narayan J, et al.
Source: SUPERCONDUCTOR SCIENCE & TECHNOLOGY Volume: 16 Issue: 4 Pages: 455-458
Published: APR 2003
108. Effect of microstructure on diffusion of copper in TiN films
Author(s): Gupta A, Wang H, Kvit A, et al.
Source: JOURNAL OF APPLIED PHYSICS Volume: 93 Issue: 9 Pages: 5210-5214 Published: MAY 1
2003
109. Plasma plume characteristics and properties of pulsed laser deposited diamond-like carbon films
Author(s): Haverkamp J, Mayo RM, Bourham MA, et al.
Source: JOURNAL OF APPLIED PHYSICS Volume: 93 Issue: 6 Pages: 3627-3634 Published: MAR 15
2003
110. Weak-localization effect in single crystal TaN(001) films
Author(s): Tiwari A, Wang H, Kumar D, et al.
Source: MODERN PHYSICS LETTERS B Volume: 16 Issue: 28-29 Pages: 1143-1149 Published: DEC
20 2002
111. Evolution of microstructure and mechanical properties of in situ consolidated bulk ultra-fine-grained and
nanocrystalline Zn prepared by ball milling
Author(s): Zhang X, Wang H, Scattergood RO, et al.
Source: MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES
MICROSTRUCTURE AND PROCESSING Volume: 344 Issue: 1-2 Pages: 175-181 Published: MAR 15
2003
112. Growth, characterization,, and electrical properties of PbZr0.52Ti0.48O3 thin films on buffered silicon
substrates using pulsed laser deposition
Author(s): Gilmore WM, Chattopadhyay S, Kvit A, et al.
Source: JOURNAL OF MATERIALS RESEARCH Volume: 18 Issue: 1 Pages: 111-114 Published: JAN
2003
113. Domain epitaxy: A unified paradigm for thin film growth
Author(s): Narayan J, Larson BC
Source: JOURNAL OF APPLIED PHYSICS Volume: 93 Issue: 1 Pages: 278-285 Published: JAN 1 2003
114. Formation of misfit dislocations in thin film heterostructures
Author(s): Narayan J, Oktyabrsky S
Source: JOURNAL OF APPLIED PHYSICS Volume: 92 Issue: 12 Pages: 7122-7127 Published: DEC 15
2002
115. Synthesis and atomic-level characterization of Ni nanoparticles in Al2O3 matrix
Author(s): Kumar D, Pennycook SJ, Lupini A, et al.
Source: APPLIED PHYSICS LETTERS Volume: 81 Issue: 22 Pages: 4204-4206 Published: NOV 25
2002
116. Mechanisms for grain size hardening and softening in Zn
Author(s): Conrad H, Narayan J
Source: ACTA MATERIALIA Volume: 50 Issue: 20 Pages: 5067-5078 Published: DEC 3 2002
30
117. Formation of epitaxial Au/Ni/Au ohmic contacts to p-GaN
Author(s): Narayan J, Wang H, Oh TH, et al.
Source: APPLIED PHYSICS LETTERS Volume: 81 Issue: 21 Pages: 3978-3980 Published: NOV 18
2002
118. Studies of deformation mechanisms in ultra-fine-grained and nanostructured Zn
Author(s): Zhang X, Wang H, Scattergood RO, et al.
Source: ACTA MATERIALIA Volume: 50 Issue: 19 Pages: 4823-4830 Published: NOV 14 2002
119. Epitaxial growth of ZnO films on Si(111)
Author(s): Tiwari A, Park M, Jin C, et al.
Source: JOURNAL OF MATERIALS RESEARCH Volume: 17 Issue: 10 Pages: 2480-2483 Published:
OCT 2002
120. Z-contrast imaging of dislocation cores at the GaAs/Si interface
Author(s): Lopatin S, Pennycook SJ, Narayan J, et al.
Source: APPLIED PHYSICS LETTERS Volume: 81 Issue: 15 Pages: 2728-2730 Published: OCT 7 2002
121. Modulated oscillatory hardening and dynamic recrystallization in cryomilled nanocrystalline Zn
Author(s): Zhang X, Wang H, Scattergood RO, et al.
Source: ACTA MATERIALIA Volume: 50 Issue: 16 Pages: 3995-4004 Published: SEP 20 2002
122. Mechanism for grain size softening in nanocrystalline Zn
Author(s): Conrad H, Narayan J
Source: APPLIED PHYSICS LETTERS Volume: 81 Issue: 12 Pages: 2241-2243 Published: SEP 16 2002
123. Structure and properties of nanocrystalline zinc films
Author(s): Narayan J, Venkatesan RK, Kvit A
Source: JOURNAL OF NANOPARTICLE RESEARCH Volume: 4 Issue: 3 Pages: 265-269 Published:
JUN 2002
124. Copper diffusion characteristics in single-crystal and polycrystalline TaN
Author(s): Wang H; Tiwari A; Zhang X; et al.
Source: APPLIED PHYSICS LETTERS Volume: 81 Issue: 8 Pages: 1453-1455 DOI: 10.1063/1.1502193
Published: AUG 19 2002
125. Mechanical properties of cyromilled nanocrystalline Zn studied by the miniaturized disk bend test
Author(s): Zhang X; Wang H; Scattergood RO; et al.
Source: ACTA MATERIALIA Volume: 50 Issue: 13 Pages: 3527-3533 Article Number: PII S1359-
6454(02)00176-3 DOI: 10.1016/S1359-6454(02)00176-3 Published: AUG 1 2002
126. Tensile elongation (110%) observed in ultrafine-grained Zn at room temperature
Author(s): Zhang X; Wang H; Scattergood RO; et al.
Source: APPLIED PHYSICS LETTERS Volume: 81 Issue: 5 Pages: 823-825 DOI: 10.1063/1.1494866
Published: JUL 29 2002
127. Tensile elongation (110%) observed in ultrafine-grained Zn at room temperature
Author(s): Zhang X; Wang H; Scattergood RO; et al.
Source: APPLIED PHYSICS LETTERS Volume: 81 Issue: 5 Pages: 823-825 DOI: 10.1063/1.1494866
Published: JUL 29 2002
31
128. Effect of thickness variation in high-efficiency InGaN/GaN light-emitting diodes
Author(s): Narayan J; Wang H; Ye JL; et al.
Source: APPLIED PHYSICS LETTERS Volume: 81 Issue: 5 Pages: 841-843 DOI: 10.1063/1.1496145
Published: JUL 29 2002
129. Structure and properties of nanocrystalline zinc films
Author(s): Narayan J; Venkatesan RK; Kvit A
Source: JOURNAL OF NANOPARTICLE RESEARCH Volume: 4 Issue: 3 Pages: 265-269 DOI:
10.1023/A:1019925315398 Published: JUN 2002
130. Strain-induced tuning of metal-insulator transition in NdNiO3
Author(s): Tiwari A; Jin C; Narayan J
Source: APPLIED PHYSICS LETTERS Volume: 80 Issue: 21 Pages: 4039-4041 DOI:
10.1063/1.1480475 Published: MAY 27 2002
131. Preparation of bulk ultrafine-grained and nanostructured Zn, Al and their alloys by in situ
consolidation of powders during mechanical attrition
Author(s): Zhang X; Wang H; Kassem M; et al.
Source: SCRIPTA MATERIALIA Volume: 46 Issue: 9 Pages: 661-665 Article Number: PII S1359-
6462(02)00048-9 DOI: 10.1016/S1359-6462(02)00048-9 Published: MAY 10 2002
132. Epitaxial growth of TaN thin films on Si(100) and Si(111) using a TiN buffer layer
Author(s): Wang H; Tiwari A; Kvit A; et al.
Source: APPLIED PHYSICS LETTERS Volume: 80 Issue: 13 Pages: 2323-2325 DOI:
10.1063/1.1466522 Published: APR 1 2002
133. Improved magnetic properties of self-assembled epitaxial nickel nanocrystallites in thin-film
ceramic matrix
Author(s): Kumar D; Zhou H; Nath TK; et al.
Source: JOURNAL OF MATERIALS RESEARCH Volume: 17 Issue: 4 Pages: 738-742 DOI:
10.1557/JMR.2002.0107 Published: APR 2002
134. Low-temperature resistivity minima in colossal magnetoresistive La0.7Ca0.3MnO3 thin films
Author(s): Kumar D; Sankar J; Narayan J; et al.
Source: PHYSICAL REVIEW B Volume: 65 Issue: 9 Article Number: 094407 DOI:
10.1102/PhysRevB.65.094407 Published: MAR 1 2002
135. Growth of epitaxial NdNiO3 and integration with Si(100)
Author(s): Tiwari A; Narayan J; Jin C; et al.
Source: APPLIED PHYSICS LETTERS Volume: 80 Issue: 8 Pages: 1337-1339 DOI: 10.1063/1.1451984
Published: FEB 25 2002
136. Low temperature electrical transport in La1-xNdxNiO3-delta
Author(s): Tiwari A; Rajeev KP; Narayan J
Source: SOLID STATE COMMUNICATIONS Volume: 121 Issue: 6-7 Pages: 357-361 Article Number:
PII S0038-1098(01)00007-8 DOI: 10.1016/S0038-1098(02)00007-8 Published: 2002
137. Structural, optical and magnetic properties of diluted magnetic semiconducting Zn1-xMnxO films
Author(s): Tiwari A; Jin C; Kvit A; et al.
Source: SOLID STATE COMMUNICATIONS Volume: 121 Issue: 6-7 Pages: 371-374 Article Number:
32
PII S0038-1098(01)00464-1 DOI: 10.1016/S0038-1098(01)00464-1 Published: 2002
138. Integration of single crystal La0.7Sr0.3MnO3 films with Si(001)
Author(s): Tiwari A; Chug A; Jin C; et al.
Source: SOLID STATE COMMUNICATIONS Volume: 121 Issue: 12 Pages: 679-682 Article Number:
PII S0038-1098(02)00029-7 DOI: 10.1016/S0038-1098(02)00029-7 Published: 2002
139. Novel cubic ZnxMg1-xO epitaxial hetero structures on Si (100) substrates
Author(s): Narayan J; Sharma AK; Kvit A; et al.
Source: SOLID STATE COMMUNICATIONS Volume: 121 Issue: 1 Pages: 9-13 Published: 2002
140. Origins of stored enthalpy in cryomilled nanocrystalline Zn
Author(s): Zhang XH; Wang HY; Kassem M; et al.
Source: JOURNAL OF MATERIALS RESEARCH Volume: 16 Issue: 12 Pages: 3485-3495 DOI:
10.1557/JMR.2001.0479 Published: DEC 2001
141. Self-assembled epitaxial and polycrystalline magnetic nickel nanocrystallites
Author(s): Kumar D; Zhou H; Nath TK; et al.
Source: APPLIED PHYSICS LETTERS Volume: 79 Issue: 17 Pages: 2817-2819 DOI:
10.1063/1.1412428 Published: OCT 22 2001
142. Mechanical properties of nanocrystalline and epitaxial TiN films on (100) silicon
Author(s): Wang H; Sharma A; Kvit A; et al.
Source: JOURNAL OF MATERIALS RESEARCH Volume: 16 Issue: 9 Pages: 2733-2738 DOI:
10.1557/JMR.2001.0373 Published: SEP 2001
143. Magnetic properties of self-assembled nanoscale La(2/3)Ca(1/3)MnO(3) particles in an alumina
matrix
Author(s): Katiyar P; Kumar D; Nath TK; et al.
Source: APPLIED PHYSICS LETTERS Volume: 79 Issue: 9 Pages: 1327-1329 DOI: 10.1063/1.1399001
Published: AUG 27 2001
144. High coercivity and superparamagnetic behavior of nanocrystalline iron particles in alumina
matrix
Author(s): Kumar D; Narayan J; Kvit AV; et al.
Source: JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS Volume: 232 Issue: 3 Pages: 161-
167 DOI: 10.1016/S0304-8853(01)00191-3 Published: JUL 2001
145. Low temperature synthesis and electrical properties of epitaxial Sr0.8Bi2.2Ta2O9 thin films
Author(s): Chattopadhyay S; Kvit A; Kumar D; et al.
Source: APPLIED PHYSICS LETTERS Volume: 78 Issue: 22 Pages: 3514-3516 DOI:
10.1063/1.1374226 Published: MAY 28 2001
146. Evidence for the formation mechanism of nanoscale microstructures in cryomilled Zn powder
Author(s): Zhang X; Wang H; Narayan J; et al.
Source: ACTA MATERIALIA Volume: 49 Issue: 8 Pages: 1319-1326 DOI: 10.1016/S1359-
6454(01)00051-9 Published: MAY 8 2001
147. Structural and magnetoresistance properties of La2/3Ca1/3MnO3 thin films on buffered silicon
substrates
33
Author(s): Kumar D; Chattopadhyay S; Gilmore WM; et al.
Source: APPLIED PHYSICS LETTERS Volume: 78 Issue: 8 Pages: 1098-1100 DOI: 10.1063/1.1350603
Published: FEB 19 2001
148. Microstructural changes due to heat-treatment of annealing and their effect on the creep behavior
of self-reinforced silicon nitride ceramics
Author(s): Wei Q; Sankar J; Narayan J
Source: MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES
MICROSTRUCTURE AND PROCESSING Volume: 299 Issue: 1-2 Pages: 141-151 DOI:
10.1016/S0921-5093(00)01403-9 Published: FEB 15 2001
149. Carbon nanotube composites synthesized by ion-assisted pulsed laser deposition
Author(s): Sharma AK; Kalyanaraman R; Narayan RJ; et al.
Source: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED
TECHNOLOGY Volume: 79 Issue: 2 Pages: 123-127 DOI: 10.1016/S0921-5107(00)00558-4 Published:
JAN 22 2001
150. Thin film of aluminum oxide through pulsed laser deposition: a micro-Raman study
Author(s): Misra A; Bist HD; Navati MS; et al.
Source: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED
TECHNOLOGY Volume: 79 Issue: 1 Pages: 49-54 DOI: 10.1016/S0921-5107(00)00554-7 Published:
JAN 4 2001
151. Effect of chamber pressure and atmosphere on the microstructure and nanomechanical properties
of amorphous carbon films prepared by pulsed laser deposition
Author(s): Wei Q; Sankar J; Sharma AK; et al.
Source: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND
FILMS Volume: 19 Issue: 1 Pages: 311-316 DOI: 10.1116/1.1322641 Published: JAN-FEB 2001
152. Tunable magnetic properties of metal ceramic composite thin films
Author(s): Kumar D; Narayan J; Nath TK; et al.
Source: SOLID STATE COMMUNICATIONS Volume: 119 Issue: 2 Pages: 63-66 DOI: 10.1016/S0038-
1098(01)00213-7 Published: 2001
Citation Classics: Most Cited Journal Papers with Citations over 100-1250 (* Seminal
Papers from Google Scholar/Web of Science)
1) *III–nitrides: Growth, characterization, and properties
SC Jain, M Willander, J Narayan, RV Overstraeten
Journal of Applied Physics 87 (3), 965-1006 (2000) 997 Times Cited
2) *Pulsed-laser evaporation technique for deposition of thin films: Physics and theoretical model
RK Singh, J Narayan
Physical Review B 41 (13), 8843 (1990) 850
3) *Optical and structural properties of epitaxial< equation>< font face='verdana'> Mg</font>< sub>
x</sub>< font face='verdana'> Zn</font>< sub> 1-x</sub>< font face='verdana'> O</font></equation>
alloys
34
AK Sharma, J Narayan, JF Muth, CW Teng, C Jin, A Kvit, RM Kolbas, OW Holland
Applied physics letters 75 (21), 3327-3329 (1999) 377
4) ZnCoO-based diluted magnetic semiconducting thin films
S Ramachandran, A Tiwari, J Narayan
Applied physics letters 84, 5255-5257 (2004) 288
5) Excitonic structure and absorption coefficient measurements of ZnO single crystal epitaxial films
deposited by pulsed laser deposition
JF Muth, RM Kolbas, AK Sharma, S Oktyabrsky, J Narayan
Journal of Applied Physics 85 (11), 7884-7887(1999) 291
6) On the grain size softening in nanocrystalline materials
H Conrad, J Narayan
Scripta materialia 42 (11), 1025-1030(2000) 281
7) Structural, optical and magnetic properties of diluted magnetic semiconducting Zn< sub> 1− x</sub> Mn<
sub> x</sub> O films
A Tiwari, C Jin, A Kvit, D Kumar, JF Muth, J Narayan
Solid state communications 121 (6), 371-374 (2002) 232
8) Theoretical model for deposition of superconducting thin films using pulsed laser evaporation technique
RK Singh, OW Holland, J Narayan
Journal of applied physics 68 (1), 233-2472 (1990) 237
9) Epitaxial growth of TiN films on (100) silicon substrates by laser physical vapor deposition
J Narayan, P Tiwari, X Chen, J Singh, R Chowdhury, T Zheleva
Applied physics letters 61 (11), 1290-1292 (1992) 221
10) *Domain epitaxy: A unified paradigm for thin film growth
J Narayan, BC Larson
Journal of applied physics 93 (1), 278-2852 (2003) 263
11) *Formation of thin superconducting films by the laser processing method
J Narayan, N Biunno, R Singh, OW Holland, O Auciello
Applied physics letters 51 (22), 1845-1847 (1987) 216
12) *In situ processing of epitaxial Y‐Ba‐Cu‐O high T c superconducting films on (100) SrTiO 3 and (100)
YS‐ZrO 2 substrates at 500–650° C
RK Singh, J Narayan, AK Singh, J Krishnaswamy
Applied Physics Letters 54 (22), 2271-2273 (1989) 210
13) *Defects and interfaces in epitaxial ZnO/α-Al 2 O 3 and AlN/ZnO/α-Al 2 O 3 heterostructures
J Narayan, K Dovidenko, AK Sharma, S Oktyabrsky
35
Journal of applied physics 84 (5), 2597-2601 (1998) 205
14) Laser annealing of boron‐implanted silicon
RT Young, CW White, GJ Clark, J Narayan, WH Christie, M Murakami, PW King ...
Applied Physics Letters 32 (3), 139-141 (1978) 205
15) Refractive indices and absorption coefficients of< equation>< font face='verdana'> Mg</font>< sub>
x</sub>< font face='verdana'> Zn</font>< sub> 1-x</sub>< font face='verdana'> O</font></equation>
alloys
CW Teng, JF Muth, U Ozgur, MJ Bergmann, HO Everitt, AK Sharma, C Jin, J Narayan
Applied Physics Letters 76 (8), 979-981(2000) 197
16) Epitaxial growth of AlN thin films on silicon (111) substrates by pulsed laser deposition
RD Vispute, J Narayan, H Wu, K Jagannadham
Journal of applied physics 77 (9), 4724-4728 (1995) 164
17) *Electrical properties of transparent and conducting Ga doped ZnO
V Bhosle, A Tiwari, J Narayan
Journal of applied physics 100 (3), 033713 (2000) 172
18) Room temperature ferromagnetism in< equation>< font face='verdana'> Zn</font>< sub> 1-x</sub>< font
face='verdana'> Cu</font>< sub> x</sub>< font face='verdana'> O</font></equation> thin films
D Chakraborti, J Narayan, JT Prater
Applied physics letters 90 (6), 062504 (2007) 172
19) *Interface structures during solid‐phase‐epitaxial growth in ion implanted semiconductors and a
crystallization model
J Narayan
Journal of Applied Physics 53 (12), 8607-8614 (1982) 155
20) High quality epitaxial aluminum nitride layers on sapphire by pulsed laser deposition
RD Vispute, H Wu, J Narayan
Applied physics letters 67 (11), 1549-1551 (1995) 149
21) Metallic conductivity and metal-semiconductor transition in Ga-doped ZnO
V Bhosle, A Tiwari, J Narayan
Applied physics letters 88 (3), 032106 (2006) 168
22) *Thin‐film deposition by a new laser ablation and plasma hybrid technique
J Krishnaswamy, A Rengan, J Narayan, K Vedam, CJ McHargue
Applied Physics Letters 54 (24), 2455-2457 (1989) 144
23) Ferromagnetism in Co doped CeO: Observation of a giant magnetic moment with a high Curie
temperature
A Tiwari, VM Bhosle, S Ramachandran, N Sudhakar, J Narayan, S Budak, A Gupta
36
Applied physics letters 88, 142511 (2006) 153
24) *Novel cubic Zn< sub> x</sub> Mg< sub> 1− x</sub> O epitaxial heterostructures on Si (100) substrates
J Narayan, AK Sharma, A Kvit, C Jin, JF Muth, OW Holland
Solid state communications 121 (1), 9-13 (2001) 130
25) Nondestructive depth profiling by spectroscopic ellipsometry
K Vedam, PJ McMarr, J Narayan
Applied physics letters 47 (4), 339-341 (1985) 134
26) *Laser method for synthesis and processing of continuous diamond films on nondiamond substrates
J Narayan, VP Godbole, CW White
Science 252 (5004), 416-418 (1991) 131
27) Spectroscopic ellipsometry: A new tool for nondestructive depth profiling and characterization of
interfaces
PJ McMarr, K Vedam, J Narayan
Journal of applied physics 59 (3), 694-701 (1986) 129
28) Aluminum nitride films on different orientations of sapphire and silicon
K Dovidenko, S Oktyabrsky, J Narayan, M Razeghi
Journal of applied physics 79 (5), 2439-2445 (1996) 132
29) Subsurface heating effects during pulsed laser evaporation of materials
RK Singh, D Bhattacharya, J Narayan
Applied physics letters 57 (19), 2022-2024 (1990) 128
30) Effect of oxygen annealing on Mn doped ZnO diluted magnetic semiconductors
S Ramachandran, J Narayan, JT Prater
Applied physics letters 88 (24), 242503 (2006) 135
31) *Laser annealing of ion-implanted semiconductors
CW White, J Narayan, RT Young
Science 204 (4392), 461-468 (1979) 133
32) Epitaxial growth in large‐lattice‐mismatch systems
T Zheleva, K Jagannadham, J Narayan
Journal of applied physics 75 (2), 860-871 ( 1994) 105
33) Dislocation density reduction in gallium arsenide on silicon heterostructures
J Narayan, JCC Fan
US Patent 5,208,1829100 1993
34) p‐n junction formation in boron‐deposited silicon by laser‐induced diffusion
J Narayan, RT Young, RF Wood, WH Christie
37
Applied Physics Letters 33 (4), 338-340 ( 1978) 105
35) Gallium-doped zinc oxide films as transparent electrodes for organic solar cell
applications, V Bhosle, JT Prater, F Yang, D Burk, SR Forrest, J Narayan, Journal of Applied
Physics 102 (2), 350
36) Ion implantation damage and annealing in germanium
OW Holland, BR Appleton, J Narayan
Journal of Applied Physics 54 (5), 2295-2301 (1983) 100
37) Effect of the chemical nature of transition‐metal substrates on chemical‐vapor
deposition of diamond, X Chen, J Narayan, Journal of applied physics 74 (6), 4168-4173
38) Low-temperature resistivity minima in colossal magnetoresistive La 0.7 Ca 0.3
MnO 3 thin films, D Kumar, J Sankar, J Narayan, RK Singh, AK Majumdar, Physical Review
B 65 (9), 094407
39) p‐n junction formation in boron‐deposited silicon by laser‐induced diffusion, J
Narayan, RT Young, RF Wood, WH Christie, Applied Physics Letters 33 (4), 338-340
40) Structural characteristics of AlN films deposited by pulsed laser deposition and
reactive magnetron sputtering: A comparative study, K Jagannadham, AK Sharma, Q
Wei, R Kalyanraman, J Narayan, Journal of Vacuum Science & Technology A 16 (5), 2804-2815
41) Studies of deformation mechanisms in ultra-fine-grained and nanostructured Zn,
X Zhang, H Wang, RO Scattergood, J Narayan, CC Koch, AV Sergueeva,, Acta materialia 50
(19), 4823-4830
42) On epitaxial growth of diamond films on (100) silicon substrates, J Narayan, AR
Srivatsa, M Peters, S Yokota, KV Ravi, Applied physics letters 53 (19), 1823-1825
43) Dislocation–twin interactions in nanocrystalline fcc metals, YT Zhu, XL Wu, XZ Liao,
J Narayan, LJ Kecskes, SN Mathaudhu, Acta Materialia 59 (2), 812-821
44) High quality optoelectronic grade epitaxial AlN films on α-Al 2 O 3, Si and 6H-
SiC by pulsed laser deposition, RD Vispute, J Narayan, JD Budai, Thin Solid Films 299
(1), 94-103
45) A novel method for simulating laser-solid interactions in semiconductors and
layered structures, RK Singh, J Narayan, Materials Science and Engineering: B 3 (3), 217-
230
46) Effects of pulsed ruby‐laser annealing on As and Sb implanted silicon, CW White, PP Pronko, SR Wilson, BR Appleton, J Narayan, RT Young, Journal of Applied Physics 50 (5), 3261-3273 (1979).
47) Semiconductor-metal transition characteristics of VO 2 thin films grown on c-and r-sapphire
substrates, TH Yang, R Aggarwal, A Gupta, H Zhou, RJ Narayan, J Narayan, Journal of Applied
38
Physics 107 (5), 053514 (2010).
48) Characterization of damage in ion implanted Ge, BR Appleton, OW Holland, J Narayan, OE
Schow III, JS Williams, KT Short, Applied Physics Letters 41 (8), 711-712 (1982).
Important US PATENTS of Professor Narayan (from USPTO Website) (Total: 40)
1 8,222,740
Zinc oxide based composites and methods for their fabrication
2 7,994,105
Lubricant having nanoparticles and microparticles to enhance fuel efficiency,
and a laser synthesis method to create dispersed nanoparticles
3 7,803,717
Growth and integration of epitaxial gallium nitride films with silicon-based
devices
4 7,122,841
Bonding pad for gallium nitride-based light-emitting devices
5 7,105,118
Methods of forming three-dimensional nanodot arrays in a matrix
6 6,955,985
Domain epitaxy for thin film growth
7 6,881,983
Efficient light emitting diodes and lasers
8 6,847,052
Light-emitting diode device geometry
9 6,734,091
Electrode for p-type gallium nitride-based semiconductors
10 6,518,077
Method for making optoelectronic and microelectronic devices including cubic
ZnMgO and/or CdMgO alloys
11 6,423,983
Optoelectronic and microelectronic devices including cubic ZnMgO and/or
CdMgO alloys
12 5,453,153
Zone-melting recrystallization process
13 5,406,123
Single crystal titanium nitride epitaxial on silicon
14 5,221,411
Method for synthesis and processing of continuous monocrystalline diamond
thin films
15 5,208,182
Dislocation density reduction in gallium arsenide on silicon heterostructures
16 5,063,202
High transition temperature superconductors
17 5,021,119
Zone-melting recrystallization process
18 4,885,052
Zone-melting recrystallization process
19 4,863,877
Ion implantation and annealing of compound semiconductor layers
20 4,774,630
Apparatus for mounting a semiconductor chip and making electrical connections
thereto
21 4,376,755
Production of crystalline refractory metal oxides containing colloidal metal
precipitates and useful as solar-effective absorbers
22 4,261,764
Laser method for forming low-resistance ohmic contacts on semiconducting
oxides
23 4,181,538
Method for making defect-free zone by laser-annealing of doped silicon
24 4,147,563
Method for forming p-n junctions and solar-cells by laser-beam processing
PUB.
APP. NO. Title
39
1 20100102450 ZINC OXIDE BASED COMPOSITES AND METHODS FOR
THEIR FABRICATION
2 20090042751 Lubricant having nanoparticles and microparticles to enhance fuel
efficiency, and a laser synthesis method to create dispersed
nanoparticles
3 20070280848 Methods Of Forming Alpha And Beta Tantalum Films With
Controlled And New Microstructures
4 20060266442 Methods of forming three-dimensional nanodot arrays in a matrix
5 20060130745 Domain epitaxy for thin film growth
6 20060016388 Domain epitaxy for thin film growth
7 20050161689 Efficient light emitting diodes and lasers
8 20050124161 Growth and integration of epitaxial gallium nitride films with silicon-
based devices
9 20040262621 Bonding pad for gallium nitride-based light-emitting devices
10 20040119064 Methods of forming three-dimensional nanodot arrays in a matrix
11 20040077135 Light-emitting diode device geometry
12 20040072381 Domain epitaxy for thin film growth
13 20040000671 Electrode for p-type gallium nitride-based semiconductors
14 20030160246 Efficient light emitting diodes and lasers
15 20030160229 Efficient light emitting diodes and lasers
16 20020084466 Optoelectronic and microelectronic devices including cubic ZnMgO
and/or CdMgO alloys
17. 2015 62245018 Q- carbon discovery and conversion of carbon into diamond
18. 2015 62202202 Q-BN discovery and conversion of h-BN into c-BN
(19) J. Narayan, Lubricant having nanoparticles and microparticles to enhance fuel
efficiency, and a laser synthesis method to create dispersed nanoparticles, China patent #
ZL200880105592.6 (8/28/2013)
(20) J. Narayan, Lubricant having nanoparticles and microparticles to enhance fuel
efficiency, and a laser synthesis method to create dispersed nanoparticles, India Patent No.
258967(2/18/2014)
Recent Research News Releases of Prof. Narayan High Points of Q-carbon and Q-BN Discovery
Materials Research Society: http://www.materials360online.com/newsDetails/60077
NSF Science 360: http://news.science360.gov/archives/20160205 IEEE Spectrum on c-BN: http://spectrum.ieee.org/nanoclast/semiconductors/materials/cheap-cubic-boron-nitride-for-power-transistors-and-switches Christian Science Monitor: http://www.csmonitor.com/Science/2015/1203/A-replacement-for-diamonds-Scientists-discover-Q-carbon Newsweek: http://www.newsweek.com/scientists-create-material-stronger-diamonds-400777
40
NBC: http://www.nbcnews.com/tech/innovation/scientists-create-substance-harder-diamond-n473476 NY Times: http://www.nytimes.com/2015/12/03/science/q-carbon-harder-than-diamond.html?_r=1 Discovery: http://news.discovery.com/tech/nanotechnology/new-form-of-carbon-is-harder-than-diamonds-151203.htm Fox News: http://www.foxnews.com/tech/2015/12/02/scientists-discover-new-form-carbon-harder-than-diamonds.html Smithsonian: http://www.smithsonianmag.com/science-nature/weird-new-type-carbon-harder-brighter-than-diamond-180957433/?no-ist CNN: http://www.cnn.com/2015/12/01/tech/super-diamond-q-carbon-scientists-laser/ Popular Science: http://www.popsci.com/new-form-carbon-is-harder-than-diamonds-and-glows Gizmodo: http://gizmodo.com/theres-a-new-form-of-carbon-thats-harder-than-diamond-1745437658 Forbes: http://www.forbes.com/sites/ericmack/2015/11/30/scientists-create-new-kind-of-diamond-at-room-temperature/
ITV: https://www.youtube.com/watch?v=vFyCGf0XcA4 https://www.dropbox.com/s/wm04naodo4w214l/Jay%20Narayan%2012-29%20Edited.mpg?dl=0
http://www.rdmag.com/news/2013/11/researchers-integrate-single-crystal-bfo-silicon-chip
http://news.science360.gov/obj/story/ba3b22c3-9f57-4395-9dc3-5c66a1075e27/nanodots-
breakthrough-lead-library-one-chip
http://www.eetimes.com/document.asp?doc_id=1151135
http://news.ncsu.edu/releases/wmsnarayannanodots/
http://www.mse.ncsu.edu/news/multifunctional-smart-sensors-high-power-devices
http://www.mse.ncsu.edu/news/faculty-amongst-top-25
http://www.mse.ncsu.edu/news/functional-oxide-thin-films-create-new-field-of-oxide-
electronics
http://www.mse.ncsu.edu/news/narayan-article-most-downloaded
http://www.mse.ncsu.edu/news/narayan-discovers-new-more-efficient-transparent-conductors
http://www.mse.ncsu.edu/news/promise-for-spintronics
http://www.eetimes.com/document.asp?doc_id=1151137 (nanodots)
http://www.sciencedaily.com/releases/2004/09/040901092526.htm (Self assembly of Novel
Nanodots)
http://chronicle.com/article/Electronics-Pioneer-Sheds/65783/
http://www.rediff.com/news/report/jay-narayan-feted-as-michael-jordan-of-
microelectronics/20100625.htm Expertise:
Narayan’s expertise and technical interests include defects in solids, laser processing and pulsed
laser deposition of novel materials and thin film heterostructures across the misfit scale. Precise
controls of epitaxy and defects in oxides integrated with silicon substrates have resulted in novel
41
functionality and smart device structures. His invention of domain epitaxy is practiced
universally to fabricate solid state devices, including high-efficiency light emitting diodes on
practical substrates such as silicon and sapphire. His currently funded research projects focus on
synthesis and processing of novel vanadium oxide and perovskite based thin film
heterostructures for smart sensors, and new phases of Q-carbon and Q-BN and direct conversion
of carbon into diamond and h-BN into c-BN in the form of nano- and micrdiamonds, nano- and
microneedles, and large-area single crystal films. These diamond and c-BN structures can be
doped with p- and n-type dopants and integrated for next-generation high-power devices and
transistors. Pure and doped Q-carbon can be made ferromagnetic, while doping can lead to
diamagnetism and high-temperature superconductivity with record transition temperatures.