Abstract

Keywords— silicon carbide switch; static characteristic; switching characteristics; reverse recovery; commutation

Rdson [m ] (25°C)

Id [A] (25°C) Structure

978-1-5386-1180-7/18/$31.00 ©2018 IEEE 2704

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A. Comparison of commutation with body-diode and SiC SBD

B. Comparison between SiC MOSFET with different Rds(on)

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A. Comparison between SiC MOSFET and cascode SiC JFET

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B. Comparison between planar and trench SiC MOSFET

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2010 Twenty-Fifth Annual IEEE Applied Power Electronics Conference and Exposition

2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)

The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications

2014 Twenty-ninth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)

2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and Exposition (APEC)

2013 IEEE Energy Conversion Congress and Exposition (ECCE)

2009 IEEE Energy

Conversion Congress and Exposition (ECCE)

Journal of Electronic Materials

2010 Twenty-Fifth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)

2015 Thirtieth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)

2013 IEEE ECCE Asia Downunder, IEEE Annual International Energy Conversion Congress and Exhibition

2009 IEEE Energy Conversion Congress and Exposition (ECCE)

in IEEE Trans. on Power Electronics

2017 Power Conversion and Intelligent Motion (PCIM Europe)

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