compact models for nanoowire transistors.pdf

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    Nanowire structure

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    Landauer-Buttikerformalism

    Electrodes: macroscopic reservoirs (L>>Lphi); experience inelasticscattering; thermalize and reach an equilibrium distribution function(Fermi distribution function)

    Channel (mesoscopic system): L

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    Process (secondquantization)

    In second quantization, the hamiltonian operator can be written

    Single-particle first quantization hamiltonian for aChannel with one impurity

    Time evolution of the field operator

    Equation to be solved

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    Process (secondquantization)

    Introducing Energy instead of momentum k, and integrating over all energies range

    The general solution of this differential equation is

    a's and b's are called amplitude operators.

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    Scattering formalism

    Scattering matrix

    Transmission and Reflection coefficients

    Scattering matrix coefficients depend solely on the channel andare computed imposing boundary conditions to thedifferential equation.

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    Examples

    For one impurityin the channel

    For two impuritiesin the channel

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    Current operator

    In second-quantized form

    Where we can use the field operator we just found (usually we compute current in the leads)

    In the left lead

    After linearization around Ef

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    Current calculation

    To compute the current we average over many samples (canonical ensemble)

    Where and

    From scattering matrixEnergy Density operator inSecond quantization

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    Landauer-Buttiker formula

    Finally one gets the Landauer-Buttiker formula for the current in the leads

    As simple results one can compute the linear conductance of a sample

    Even if there are no impurities in the channel (T=1), a resistance arises anyway.It is related to the coupling of the mesoscopic (ballistic) system with the macroscopiccontacts.

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    Self-consistent field

    Source and drain are macroscopic contacts with fermi distribution functionsf1(E) and f2(E).

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    Effect of Vg on the channel

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    What makes current flow?

    When a voltage V is applied between source and drain

    An energy level E inside the channel sees two differentCharge flows: Source would like to fill it with electrons to see f1(E); Drain would like to empty it to see f2(E).

    Equilibrium is never reached.

    Current from the source Current from the drain

    At steady-state

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    Broadening of the level

    Part of the energy level spreads outside the energy range between the electrochemicalPotentials where current flows.The current is then reduced by a factor

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    Density of level D(E)

    Considering the density of level D(E) inside the channel, with broadening becomes

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    Current and number ofelectrons

    To compute the current in presence of broadening, we have to integrate over all theEnergy range

    Similarly, the number of electrons N at steady-state becomes

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    Potential profile

    To inlcude the effect of gate voltage, potential inside the channel must be computed.

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    Iterative procedure

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    A simple comparison

    From Landauer-Buttiker theory

    Datta