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This is information on a product in full production.
May 2014 DocID022286 Rev 2 1/15
ECMF02-4CMX8
Common mode filter with ESD protection for USB 2.0 interface
Datasheet − production data
Features• Integrated common mode filter• Differential pair ESD protection• 16 V VBUS ESD and EOS protection• ID pin ESD protection• Low profile micro QFN-8L package• High bandwidth: > 6 GHz• Optimized for high speed USB 2.0 • High common mode attenuation at 900 MHz
and 1.8 GHz
• Support of audio over USB 2.0 thanks to bidirectional ESD protection
• Ultra compact, low board space • Low height: < 0.55 mm
Complies with the following standards:
• IEC 61000-4-2 level 4:– ±15 kV (air discharge)– ±8 kV (contact discharge)
• RoHS2 compliant
ApplicationsWhere transient over-voltage protection in ESD sensitive equipment is required, such as:
• Computers• Printers• Communication systems• Cellular phone handsets and accessories• Video equipment
DescriptionECMF02-4CMX8 affords key component integration such as common mode filter D+ and D- lines and ESD protection on all lines. This device offers an optimized flow-through footprint for USB 2.0 applications.
Figure 1. Pin configuration (top view)
Micro QFN-8 L(pin view)
D+
D- D-
GNDVBUS
GNDID
D+
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Characteristics ECMF02-4CMX8
2/15 DocID022286 Rev 2
1 Characteristics
Figure 2. Electrical characteristics - definitions
Table 1. Absolute maximum ratings (Tamb = 25 °C)
Symbol Parameter Value Unit
VPP Peak pulse voltage(1)
ESD discharge IEC 61000-4-2, level 4
Contact discharge on D+/D- pinsContact discharge on VBUS and ID pinsAir discharge on all pins
10
2030
kV
PPP Peak pulse power (8/20µs) on VBUS 150 W
IPP Peak pulse current (8/20µs) on VBUS 4.8 A
Top Operating temperature -30 to +85 °C
Tj Maximum junction temperature 125 °C
Tstg Storage temperature range - 55 to +150 °C
1. Measurements done on IEC 61000-4-2 test bench. For further details see Application note AN3353.
I
V
IPPIPP
VCLVCLVBRVBRVRMVRM
IRIRIRMIRM
IRMIRMIRIR
IPPIPP
VRMVRMVBRVBRVCLVCL
Symbol ParameterV = Breakdown voltageI = Leakage current @ VV = Stand-off voltageV = Clamping voltageI = Peak pulse currentI = Breakdown current
BR
RM RM
RM
CL
PP
R
DocID022286 Rev 2 3/15
ECMF02-4CMX8 Characteristics
15
Figure 3. SDD21 differential attenuation measurement (Z0 diff = 90 Ω ) for data lines D+ and D-
Table 2. Electrical characteristics (values, Tamb = 25 °C)
Symbol Test conditions Min. Typ. Max. Unit
Data Lines
VBR IR = 1 mA 6 V
IRM VRM = 5.5 V per line 100 nA
RDC DC serial resistance on data line 3 4 Ω
VBUS
VBR IR = 1 mA 15 16.5 18 V
IRM VRM = 12 V 50 nA
VCL Clamping voltage. IPP = 1 A, tp = 8/20 µs 20 V
VCL Clamping voltage. IPP = 2.5 A, tp = 8/20 µs 24 V
ID
VBR IR = 1 mA 6 V
IRM VRM = 1.5 V per line 100 nA
SDD21 (dB)
100k 1M 10M 100M 1G
-3
-2.5
-2
-1.5
-1
-0.5
0
F (Hz)
Characteristics ECMF02-4CMX8
4/15 DocID022286 Rev 2
Figure 4. SCC21 common mode attenuation measurement (Z0 com = 45 Ω )
Figure 5. ID frequency response measurement (Z0 = 75 Ω )
SCC21 (dB)
100k 1M 10M 100M 1G
-40
-35
-30
-25
-20
-15
-10
-5
0
F (Hz)
100k 1M 10M 100M 1G-30
-25
-20
-15
-10
-5
0
F (Hz)
S21 (dB)
DocID022286 Rev 2 5/15
ECMF02-4CMX8 Characteristics
15
Figure 6. ESD test conditions
Figure 7. ESD response to IEC 61000-4-2 (+8 kV contact discharge) on VBUS
- 20 dB - 20 dB
D+
D- D-
GNDVBUS
GNDID
D+
Attenuators
Oscilloscope 50 Ω
V : ESD peak voltageV :clamping voltage @ 30 nsV :clamping voltage @ 60 ns
PP
CL
CL
V :clamping voltage @ 100 nsCL
1234
85.6 V
46.3 V
30.7 V 23.5 V
1
2
43
Characteristics ECMF02-4CMX8
6/15 DocID022286 Rev 2
Figure 8. ESD response to IEC 61000-4-2 (-8 kV contact discharge) on VBUS
Figure 9. ESD response to IEC 61000-4-2 (+8 kV contact discharge) on ID
-83.5 V
-46.0 V
-30.4 V-22.0 V
1
2
43
V : ESD peak voltageV :clamping voltage @ 30 nsV :clamping voltage @ 60 ns
PP
CL
CL
V :clamping voltage @ 100 nsCL
1234
V : ESD peak voltageV :clamping voltage @ 30 nsV :clamping voltage @ 60 ns
PP
CL
CL
V :clamping voltage @ 100 nsCL
1234
47.2 V 19.0 V
17.6 V 15.5 V1
2
43
DocID022286 Rev 2 7/15
ECMF02-4CMX8 Characteristics
15
Figure 10. ESD response to IEC 61000-4-2 (-8 kV contact discharge) on ID
Figure 11. ESD response to IEC 61000-4-2 (+8 kV contact discharge) on differential lane
-56.0 V
-25.1 V
-25.2 V-21.2 V
1
2
43
V : ESD peak voltageV :clamping voltage @ 30 nsV :clamping voltage @ 60 ns
PP
CL
CL
V :clamping voltage @ 100 nsCL
1234
V : ESD peak voltageV :clamping voltage @ 30 nsV :clamping voltage @ 60 ns
PP
CL
CL
V :clamping voltage @ 100 nsCL
1234
54.7 V
33.1 V
20.6 V 13.2 V
1
2
43
Characteristics ECMF02-4CMX8
8/15 DocID022286 Rev 2
Figure 12. ESD response to IEC 61000-4-2 (-8 kV contact discharge) on differential lane
-49.5 V-27.3 V
-17.0 V-11.4 V
12
43
V : ESD peak voltageV :clamping voltage @ 30 nsV :clamping voltage @ 60 ns
PP
CL
CL
V :clamping voltage @ 100 nsCL
1234
Figure 13. Eye diagram (loaded by Zdiff = 90 Ω) with USB2.0 [mask 1] board only
Figure 14. Eye diagram (loaded by Zdiff = 90 Ω) with USB2.0 [mask 1] board with ECM02-4CMX8
Rise time (ps) Fall time (ps) Eye height (mv) Eye width (ns)347 347 721 2.04
Rise time (ps) Fall time (ps) Eye height (mv) Eye width (ns)432 432 674 2.03
DocID022286 Rev 2 9/15
ECMF02-4CMX8 Characteristics
15
Figure 15. TDR measurement (loaded by Zdiff = 90 Ω), rise time 400 ps
Figure 16. HS sync
88
90
92
94
96
98
100
0 1 2 3 4
t (ns)
Zdiff ( )Ω
Characteristics ECMF02-4CMX8
10/15 DocID022286 Rev 2
Figure 17. Total harmonic distortion on differential lanes
Figure 18. Crosstalk on differential lanes
DocID022286 Rev 2 11/15
ECMF02-4CMX8 Application schematic
15
2 Application schematic
Figure 19. Application schematic
Micro - USBreceptaclereceptacle
ECMF02-4CMX8
Tow
ard
s U
SB
tra
nsc
eive
r
D+
D- D-
GNDVBUS
GNDID
D+
Package information ECMF02-4CMX8
12/15 DocID022286 Rev 2
3 Package information
• Epoxy meets UL94, V0• Lead-free packages
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
Figure 20. Micro QFN-8L dimension definitions
Table 3. Micro QFN-8L dimension values
Ref.
Dimensions
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 0.45 0.50 0.55 0.018 0.020 0.022
A1 0.00 0.02 0.05 0.00 0.0008 0.002
b 0.15 0.20 0.25 0.006 0.008 0.010
D 2.45 2.50 2.55 0.096 0.098 0.100
E 1.15 1.20 1.25 0.045 0.047 0.049
e 0.45 0.50 0.55 0.018 0.020 0.022
L 0.30 0.40 0.50 0.012 0.016 0.020
L0.20
b
PIN 1#
A
A1
D
e
E
0.40
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DocID022286 Rev 2 13/15
ECMF02-4CMX8 Package information
15
Figure 23. Tape and reel specifications
Note: More packing information is available in the application notes: AN1751: “EMI Filters: Recommendations and measurements”
Figure 21. Footprint Figure 22. Marking
0.50
2.10
0.20
0.40
0.60
0.20
0.40
1.60
XXWW
Y P
Dot: Pin 1XX: MarkingWW: Assembly weekY: Assembly yearP: Assembly plant
Dot identifying Pin A1 location
User direction of unreelingAll dimensions are typical values in mm
Ø 0.80
4.0 0.1±
4.0 ± 0.1
2.0 0.05±
8.0
+0.3
/-0.1
1.7
5±
0.1
3.5
±0.0
5
Ø 1.55 ± 0.05
0.70 ± 0.051.45 ± 0.05
0.30 0.02±
2.8
0±
0.0
5
Ordering information ECMF02-4CMX8
14/15 DocID022286 Rev 2
4 Ordering information
Figure 24. Ordering information scheme
For the latest information on available order codes see the product pages on: www.st.com.
5 Revision history
Table 4. Ordering information
Order code Marking Package Weight Base qty Delivery mode
ECMF02-4CMX8 KG Micro QFN-8L 3,7 mg 3000 Tape and reel
ECMF 02 - 4 C MX8
FunctionESD common mode filter
Number of lines02 = 2 lines
Number of ESD protected lines
4 = 4 ESD protected lines
Version
C = 16 V V for VBR BUS
PackageMX8 = Micro QFN-8L
Table 5. Document revision history
Date Revision Changes
19-Sep-2012 1 Initial release.
27-May-2014 2 Updated Figure 23, Figure 24 and reformatted the document.
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DocID022286 Rev 2 15/15
ECMF02-4CMX8
15
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Figure 1. Pin configuration (top view)1 CharacteristicsTable 1. Absolute maximum ratings (Tamb = 25 °C)Figure 2. Electrical characteristics - definitionsTable 2. Electrical characteristics (values, Tamb = 25 °C)Figure 3. SDD21 differential attenuation measurement (Z0 diff = 90 Ω) for data lines D+ and D-Figure 4. SCC21 common mode attenuation measurement (Z0 com = 45 Ω)Figure 5. ID frequency response measurement (Z0 = 75 Ω)Figure 6. ESD test conditionsFigure 7. ESD response to IEC 61000-4-2 (+8 kV contact discharge) on VBUSFigure 8. ESD response to IEC 61000-4-2 (-8 kV contact discharge) on VBUSFigure 9. ESD response to IEC 61000-4-2 (+8 kV contact discharge) on IDFigure 10. ESD response to IEC 61000-4-2 (-8 kV contact discharge) on IDFigure 11. ESD response to IEC 61000-4-2 (+8 kV contact discharge) on differential laneFigure 12. ESD response to IEC 61000-4-2 (-8 kV contact discharge) on differential laneFigure 13. Eye diagram (loaded by Zdiff = 90 W) with USB2.0 [mask 1] board onlyFigure 14. Eye diagram (loaded by Zdiff = 90 W) with USB2.0 [mask 1] board with ECM02-4CMX8Figure 15. TDR measurement (loaded by Zdiff = 90 W), rise time 400 psFigure 16. HS syncFigure 17. Total harmonic distortion on differential lanesFigure 18. Crosstalk on differential lanes
2 Application schematicFigure 19. Application schematic
3 Package informationFigure 20. Micro QFN-8L dimension definitionsTable 3. Micro QFN-8L dimension valuesFigure 21. FootprintFigure 22. MarkingFigure 23. Tape and reel specifications
4 Ordering informationFigure 24. Ordering information schemeTable 4. Ordering information
5 Revision historyTable 5. Document revision history