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Cobham MicrowaveDiodes BU presentation0
Cobham Microwave …
The most important thing we build is trust
Diodes BU Presentation
January 2013
Cobham MicrowaveDiodes BU presentation1
• Basis• Main parameters• Manufacturing step• Packaging• Applications• Diodes dedicated to MRI• Diodes dedicated to Space market
Silicon Diodes
January 2013
Cobham Microwave
•I layer determines Vbr•I layer thickness (W):
1 to 300 µm• Mesa technology• Oxide or glass passivation• Gold based pads• Normal polarity : PIN• Reverse polarity : NIP
1- PIN diodes basis:
Metal pad (anode)
Glass or oxide
passivation
Metal pad (cathode)
I Layer
N+ Layer
P+ Layer
2 January 2013Diodes BU presentation
Cobham MicrowaveJanuary 2013Diodes BU presentation3
1- PIN diodes basis:
Reverse Mode:• Vbr: breakdown voltage, large increase of reverse current over 10µA • Vbr is directly related to W• Vbr measured @ Ir=10 µA • Vr: maximum applied reverse voltage defined about 0.9Vbr• Ir @ Vr
Cobham Microwave
Forward Bias :
• Diode is similar to a variable resistance • Rs depends of the current If• Rs will impact:
loss in serie switch design
isolation in shunt design
January 2013Diodes BU presentation4
2- Main parameters: Rs
-ICurrent Generator
+
LCR meter
Rs
0,1
1,0
10,0
1 10 100
Rs [
Oh
ms]
If [mA]
Rs versus If 120 MHz
Cobham Microwave
Reverse Bias :
• Cj is junction capacitance• Ct=Cj+Cpakaging• Cj decreases untill punch-through voltage
• Cj min is related to 1/W and Surface S : (ɛS/W)• Cj will impact: loss in shunt design
isolation in serie design
January 2013Diodes BU presentation5
-R
VCapacitance
meter
+
Ct
2- Main parameters: Cj, Ct
0
0,2
0,4
0,6
0,8
1
0 5 10 15 20
Ct
[pF]
Vr [V]
Ct versus Vr@ 1 MHz DH50101DH50103DH50104DH50106
Cobham Microwave
Reverse Bias :
• Rp shunts parallel Cj capacitance• For VVpt Rp max• Higher Rp is requested for better performances
January 2013Diodes BU presentation6
-R
VVoltage
Generator
+
LCR meter
Rp
2- Main parameters: Rp
1E+03
1E+04
1E+05
1E+06
1E+07
0 5 10 15 20 25 30
Rp
[O
hm
s]
Vr [V]
Rp versus Vr120 MHz
30 MHz
Cobham Microwave
The parasitic inductance, Lp :
• added by the bonding • limits the lowest impedance value.• Values from 0.1nH to 1.0nH depending on
the package and type of bonding
• No important influence on PIN diode behaviour at frequency below 1GHz.
• More important than Rs at high frequency Z=Rs+Lp.ω
January 2013Diodes BU presentation7
2- Main parameters: Lp
Cobham MicrowaveJanuary 2013Diodes BU presentation8
2- Main parameters: l
Minority carrier lifetime
TlV2
V1=10%V2
• Physical property of semi conductor• Electrons/holes lifetime before recombination when diode turns from
forward to reverse
• Release on quality of material and diode volume (W & S)• Measured @ If=10mA & Ir=6mA
Cobham MicrowaveJanuary 2013Diodes BU presentation9
2- Main parameters: Pin & Pd
Power handling and Power dissipating:
PIN diode control RF power: PinA small part of power is dissipated inside the diode Pd=Pin- Pout+ PDC increase of junction temperature
Pin, Pout : CW or pulse power with
• Pd=(Tj-Ta)/Rth (thermal resistance)Ta: ambient temperature usually 25°C
Tj: maximum junction temperature usually 175°C
• Pd = IRF2 Rs + IDCVDC IDC & VDC are negligible
≈ IRF2 Rs (serie design forward bias)
(shunt design forward bias)
avs P
Z
R
0
avPZ0
sR4
%*DCPP inav
Cobham MicrowaveJanuary 2013Diodes BU presentation10
2- Main parameters: Rth
Thermal Resistance
• Measures the removal of heat by conduction from the diode through the package• Measured with 0.25 to 1Watt & If=3mA • Depends on die size and package
M208 ~ 50°C/W MELF ~ 30°C/W BH158 ~ 3°C/W
Rth
If
Vr
Vr1
Vr2
Cobham MicrowaveJanuary 2013Diodes BU presentation11
Min frequency :
Must be higher than the I region transit time frequency (The transit time = time for carrier to cross the I region)
(f : MHz ; w= I layer, µm),
Using a diode at a too low frequency will increase the distortion
Example EH80210 : I layer 200µm fmin= 32.5kHzEH50033 : I layer 3µm fmin =144MHz
Max frequency :
When the diode is reverse biased, it should not dis-adapt the system
(Ct, total capacitance, pF)
Example DH80210 : Cj(50V) = 3pF fmax 1 GHzEH50033 : Cj(50V) = 0.1pF fmax 30 GHz
2- Main parameters: frequency limits
t0 C.Z..2
1f
W²
1300f
Cobham MicrowaveDiodes BU presentation12
3- Manufacturing Steps:
– Step 1: Epitaxy• Growth of N+ , I & P+ layer on a bulk material
– Result : a complete and homogeneous wafer
– Step 2: Front End
• Photolithography• Etching of the wafer• Oxide or Glass Passivation• Rear & Back side metallization• Dicing• Test & characterization
– Result : a bare die
– Step 3: Back end• For packaged diodes only
– Result : a packaged diode
Bulk
material
Shipment to
customer
Packaged
diodes
Step 1:
Epitaxy
Step 2:
Front End
Step 3:
Back End(Option)
Bare Die
Epitaxied wafer
Shipment to
customer
January 2013
Cobham Microwave
Protection layer
P+
I
N+
Protection layer
P+
N
N+
P+
N2
N1
N+
PIN
VARICAP
VARACTOR
VPH
Step 1 : Epitaxial layers For Diodes:
3- Manufacturing Steps:
January 201313 Diodes BU presentation
Cobham Microwave
Step 1Epitaxy
Step 2Front End
Step 3Back End
Shipment to
customer
Shipment to
customer
Shipment to
customer
Packaged diodes
Bare Die
Bulk
material
Epitaxied wafer
– Step 2: Front End
• Photolithography
• Etching of the wafer
• Glass Passivation
January 2013
3- Manufacturing Steps:
14 Diodes BU presentation
Cobham Microwave
Step 1Epitaxy
Step 2Front End
Step 3Back End
Shipment to
customer
Shipment to
customer
Packaged diodes
Bare Die
Bulk
material
Epitaxied wafer
– Step 2: Front End • Photolithography
• Rear Metallization
• Back metallization
• Dicing
– Step 3: Back end• Packaging of the die
Shipment to
customer
January 2013
3- Manufacturing Steps:
15 Diodes BU presentation
Cobham MicrowaveDiodes BU presentation16
• Assembly Capability
– Bonding:
• Thermocompression bonding: 12, 18 & 25 µm wires• Ball, Thermosonic or Wedge bonding:
– Gold only, Up to 200 µm ribbon
• Thermocompression: – From 12 µm wire diameter
– up to 2 mm ribbon width
– Brazing:
• AuSn (280°C), AuGe (345°C)
– Gluing:
• Conductive (84-1 LMISR4), Insulated (84-3)…
– Sealing:
• AuSn Brazing sealing,• Electrical sealing
3- Manufacturing Steps:
January 2013
Cobham MicrowaveDiodes BU presentation17
High Rel. Screening
•Reliability
– ESA Standard• Generic specification ESCC5010
(discrete microwave semiconductor)• Detail specifications
– Customer specifications
High Rel Screening capability
– Climatic chambers– Life tests (HTRB, PBI,…)– Die shear tests– Pull tests– Gross and fine leakage– Vibrations and accelerations test– PIND tests (Particle Impact Noise
detection)
Die share
PIND test
Pull test
Acceleration test
Leakage test
January 2013
3- Manufacturing Steps:
Cobham Microwave
4- Diodes Packaging options:
2 CERAMIC MELF
1 CERAMIC PILL
4 Ceramic SURFACE MOUNT
3 PLASTIC
5 SWITCH
January 201318 Diodes BU presentation
http://www.google.fr/imgres?imgurl=http://upload.wikimedia.org/wikipedia/de/thumb/d/d9/EADS_Astrium_Logo.svg/800px-EADS_Astrium_Logo.svg.png&imgrefurl=http://de.wikipedia.org/wiki/Datei:EADS_Astrium_Logo.svg&h=337&w=800&sz=23&tbnid=XKv0DBo-kXQi7M:&tbnh=60&tbnw=143&prev=/images?q=astrium+logo&usg=__awSuCXaF1xnk2TpQI-vYh25KjdU=&ei=VrCcS4KvDpPy0gTdl-niAQ&sa=X&oi=image_result&resnum=6&ct=image&ved=0CCAQ9QEwBQ
Cobham Microwave
T Standard Microwave Package For Hi-rel (-> 18 Ghz)
T Very Good Electrical And Thermal Performances
T Hermetic
T Expensive
T Round Shape, Smd Nightmare !
M208b F27d
4- PIN Diodes Packaging options:
1-Ceramic pills
January 201319 Diodes BU presentation
Cobham Microwave
T Standard Pin Diode Package For Power Applications (-> 2 GHz)
T Good Electrical And Thermal Performances
T Hermetic
T High Volume Capability / Moderate Cost
T SMD, Lead Free
T Only For Selected P/N
2-Ceramic MELF
4- PIN Diodes Packaging options:
January 201320 Diodes BU presentation
Cobham Microwave
SOT23
DHxxxxx-51
DHxxxxx-53
DHxxxxx-54
DHxxxxx-55
T Standard Economical Package For Low Power Applications (-> 2 GHz)
T Not Hermetic But MSL1 Qualified
T High Volume Capability / Low Cost
T SMD, Lead Free
T For Less Critical Applications
3-Plastic SMD
4- PIN Diodes Packaging options:
January 201321 Diodes BU presentation
Cobham Microwave
4- PIN Diodes Packaging options:
T Plastic Package For Extended
Frequency Applications (6 GHz)
T High Integration Capability
T High Volume Capability / Low Cost
(Collective Process)
T SMD, Lead Free, MLS1
T Design Flexibility, Footprints Available
4- High Density Surface Mount/ DFN
January 201322 Diodes BU presentation
Cobham Microwave
4- PIN Diodes Packaging options:
T Microwave Package For power handling
T Very Good Electrical And Thermal Performances :
- Grounded heat sink
- isolated heat sink, with or without connection
T Hermetic
T Expensive
5- High power package
BH141 BH300
January 201323 Diodes BU presentation
Cobham Microwave
Ceramic Pill
(M208a)
MELF SOT/SOD DFN
Surface Mount No Yes Yes Yes
Automatic
Pick&Place
No Yes Yes Yes
Moisture Sensitivity Hermetic Hermetic MSL1 MSL1
Integration Capability + + + +++
Electrical
performances
+++ ++ + ++
Power dissipation ++++ +++ + ++
Cost 10 4 1.0 1.5
Design flexibility + - ++ +++
4- PIN Diodes Packaging options:
January 201324 Diodes BU presentation
Cobham MicrowaveJanuary 2013Diodes BU presentation25
Diodes main popular package types
M208B BMH76
BH141
BH194
F27d BH142
BH158 BH300 BH204
SMD 4/6/8 (Melf) SOT143SOD323
All diodes can be supplied in bare dies
M208A
BH405
DFN 2L1
Cobham MicrowaveDiodes BU presentation
D H 8 0 1 2 0 - xx
EH for Die
DH for packaged Diode
Vbr class for PIN orcapacitance class for varactors
Capacitance Class
Package designation or SCD
Diode Class
DH2xx /multiplierDH5xx /SRDDH40xxx/AttenuatorDH50xxx/Pin low powerDH60xxx/limiterDH7xxxx/tuning VaractorDH80xxx/High power
Diodes reference construction :
DH80 serie :05 for 500V 10 for 1000V etc...
DH50 or DH60 serie :05 for 50V10 for 100V etc...
January 201326
Cobham MicrowaveDiodes BU presentation27
Silicon Diodes Product Range1. Switch application2. Limiter application3. Attenuator Application4. Tuning Varactors5. Frequency Multiplication6. Voltage Multiplier7. MOS Capacitors
5- Applications:
January 2013
Cobham MicrowaveDiodes BU presentation28
1. Switching application :– Antenna switching,
– Filter bank, agile filters…
– Market : military radio, PMR, IF control devices …
5- Applications:
January 2013
Switching
Cobham MicrowaveJanuary 2013
loss & Isolation
29 Diodes BU presentation
5- Applications: Serie Switch
Cobham MicrowaveJanuary 201330 Diodes BU presentation
5- Applications: Shunt Switch
loss & Isolation
Cobham MicrowaveDiodes BU presentation31
Fast switching, low & medium power: DH50xxx series
• Thin I layer: from 2 to 50 µm• Oxide (≤100V) or glass passivation (>100V)• Breakdown voltage : from 30V to 400 V• Junction capacitance : from 25 fF to 0.8 pf typical• Serie resistance: down to 0.5 @ 10 mA• l : from 20 ns to 2 µs typical• Application from L to Ku band, power handling up 50W
Available : in die form, hermetic ceramic package, strip line and plastic packages
* Example DH50256
5.1 Switching application
January 2013
Cobham MicrowaveDiodes BU presentation32
High power PIN diodes : DH80xxx series• Thick I layer: from 50 to 300 µm• Mesa design and glass passivation• Breakdown voltage : 500V to 3000 V• Low Cj for a good isolation: from 0.1 pF to 3 pF • low Rs for lower insertion Loss: Rs: 0.25 to 0.7 @ 100mA• Large minority carrier life time for low distortion
Available in die or various packages : series, shunt, flat mounted or with grounded or electrically isolated heat sink for optimal thermal behavior
High power switches : SH90xxx serie• SP2T, SP3T• Pin : 10 W to 1000W CW• 1 Mhz to 1 GHz
Pill
Stud
Isolated stud
5.1 Switching application
January 2013
Cobham MicrowaveDiodes BU presentation33
Stud
Pill
Isolated stud
New Items: 3000V High power Diode– DH80307 & DH80309 diodes for kiloVolt range application
– High voltage : Ir < 10 µA @ 3000V capability
– High current : up to 25A handling
– Resistance as low as 0.15Ω @ 500 mA (ref: DH80309-01)
– Capacitance as low as 2.5 pF @ - 200V (DH80307-01)
– High Carrier life time 45 µs min for low distortion
– Thermal resistance less than 3°C/W (DH80309-01)
– High power handling typical 1kW CW
– High power handling above 30kW with DC 4% tested
– Small size comparing to MACOM Diode
Available with grounded or electrically isolated heat sink for optimal thermal behavior
Switch
5.1 Switching application
MACOM Cobham
January 2013
Cobham MicrowaveDiodes BU presentation34
• Breakdown voltage : 50V to 1000 V• Low loss, low distortion :
– Ct from 0.3 pF to 3 pF
– Rs: 0.25 to 0.7 @ 100mA
– low inductance
– High minority carrier lifetime
• High power dissipation up to 10W
• Glass passivated PIN diode chip• Hermetically sealed package• Various Sizes SMD4, SMD6,
SMD8
• Non magnetic package option• With connection option
• DH80xx series in MELF SMD package
0
2
4
6
8
10
12
0 25 50 75 100 125 150 175
Pd [
W]
Tcase [°C]
Square MELF Diodes Maximum Dissipated Power Rating*
DH50209DH80050DH80051DH80052DH80053DH80054DH80055DH80082DH80100DH80101DH80102DH80106
*diode brazed on infinite copper heat
5.1 Switching application
January 2013
Cobham MicrowaveDiodes BU presentation35
New Items: DFN diodes
– Dual Flat No-lead package
– Cost effective, SMD, high volume
• Miniaturized• Flexibility (size, diode combinations)• Adaptability to board design
– Low parasitic:
• Capacitance package < 0.1 pF– Non hermetic, high reliability: MSL1 level
1 2 3 4 50 6
-25
-20
-15
-10
-5
-30
0
freq, GHz
dB
(S(2
,1))
Isolation at -10V
1 2 3 4 50 6
-0.8
-0.6
-0.4
-0.2
-1.0
0.0
freq, GHz
dB
(S(2
,1))
Insertion loss 10mA
Now available in serie and shunt configuration
Variable package size 2L1, 2L2, 3L2, and 2L0603
– Large range of Vbr: 50V to 1000 V
– Good thermal performance : 25 to 60°C/W
– Frequency up to 10 Ghz
– Complete data sheets with DC & RF characteristics
– Equivalent circuit Available
* Example DH50401-90N
5.1 Switching application
January 2013
Cobham MicrowaveDiodes BU presentation36
New Items: Antiparallel pair PIN Diodes:available now
– Effective passive rectifier to tune and de tune MRI tank circuit
– 2 options: single and dual antiparallel pair
– Capacitance: Ct (0V) = 1 pF typical (single pair)
– Resistance: Rsf = 1.2 Ω @ 10 mA
– Full non magnetic package
– Surface mount package BH60 & BH61
– Ref DH52076 (single pair) DH54076 (dual pair)Block diagram
BH60 BH61
January 2013
5.1 Switching application: MRI Market
Cobham MicrowaveDiodes BU presentation37
– Radio receiver protector
– Mainly military: radar application
5.2 Limiter application
January 2013
F
AntennaDuplexer
Low Noise Amplifier
Switch (diodes)
Tx Amplifier
Attenuator
Medium Power Amplifier
Switch (diode)
Phase shifter
Medium Power Amplifier
Load
CIL (Circulator/Isolator/Limiter)
Limiter
Cobham MicrowaveDiodes BU presentation38
Limiter : DH60xxx series
– Breakdown voltage : 25V to 200V
– Junction capacitance : from 0.1 pF to 0.7pF typical
– Low loss
– threshold @ 2.7 GHz : from + 10 to + 25 dBm
– leakage power @ 2.7 Ghz from : + 20 to + 30 dBm
– Pin CW max (W) : from 2 to up to 15W, New P/N DH60154
5.2 Limiter application
0
5
10
15
20
25
30
35
0 10 20 30 40 50
Pou
t [d
Bm
]
Pin [dBm]
Pout Vs Pin Pout
Frequency (GHz)
Inse
rtio
n Lo
ss (d
B)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
-0.75
-0.7
-0.65
-0.6
-0.55
-0.5
-0.45
-0.4
-0.35
-0.3
-0.25
-0.2
-0.15
-0.1
-0.05
0.0
-10 V
-20 V
-35 V
-5V
0 V
January 2013
Cobham MicrowaveJanuary 2013Diodes BU presentation39
5.2 Limiter application
DH60154 -62N: Equivalent circuit
Wire bonding
diode
Metallic hole inductance
and Cathode brazing Alumina
substrate
Equivalent circuit is done for DFN 3L2 package in forward modeDiode is brazed on Alumina substrate
Cobham MicrowaveDiodes BU presentation40
DH60154 -62N: Equivalent circuit
Forward bias
5.2 Limiter application
January 2013
Reverse biasLbonding = 0.62 nH
Cp = 51 fF
Lpar = 11.2 nH
Rpar = 184 Ohms
Lvia = 0.094 nH
Rdiode = 0.33 Ohms
Cj = 328 fF
Cobham MicrowaveJanuary 2013Diodes BU presentation41
5.2 Limiter application
Forward bias
Reverse bias
Black:Measure , Red: Simulation
Cobham MicrowaveDiodes BU presentation42
Attenuator : DH40xx series
– Main application : Automatic Gain Control
– Market : CATV, repeater, radio links, UFH radio, IF control devices …
5.3 Attenuator application
January 2013
Attenuator
Cobham MicrowaveDiodes BU presentation43
Attenuator : DH40xxx series
– wide dynamic range :
• From : 10 up to 700 (@ If = 100 mA down to 0.1 mA)• 3 types of diodes
– junction capacitance :
• 0.3 pF to 0.10 pF typical– Telecom, Defense & Space applications
5.3 Attenuator application
January 2013
Cobham MicrowaveDiodes BU presentation44
Tuning Varactor applications:
– Main application : VCO, tunable filter
– Market : almost all telecom system
• Space• Military• Telecom …
5.4 Tuning Varactor
January 2013
Cobham MicrowaveDiodes BU presentation45
Varactor hyperabrupt: DH76xxx series
– Breakdown voltage: 20V min
– Cj (4V) : from 1.2 to 15 pF
– Tuning ratio: Ct(0)/Ct(20) : 5 to 7
– Q factor: 140 to 2200
0
1
10
100
1000
0.1 1 10 100
Ct
[pF
]
V[V]
Typical total capacitance versus reverse voltage
DH71004_m208 DH71008_m208 DH71012_m208 DH71020_m208 DH71030_m208 DH71045_m208
DH71067_m208 DH71100_m208 DH71120_m208 DH71330_m208 DH71560_m208 DH71999_m208
Varactor abrupt: DH71xxx series
– Breakdown voltage: 30V min
– Cj (4V) : from 0.4 to 100 pF
– Tuning ratio: Ct(0) / Ct(30) : 3 to 5.2
– Q factor : 300 to 4500
5.4 Tuning Varactor
January 2013
Cobham MicrowaveDiodes BU presentation46
SRD diodes: DH54x & DH2xx series
– SRD : DH54x series :
• Vbr : 15 V to 50 V
• Snap off time : 60ps to 150 ps typical
• Cj(6v) : from 0.3 pF to 1.5 pF
– Multiplier : DH2xx series :
• up to 25 GHz output Frequency
• 200 mW to 20 W Pout
• Snap off time : 60 to 1000 ps
Application : comb generator
5.5 Frequency multiplication application
January 2013
Cobham MicrowaveDiodes BU presentation47
DH85050 & DH85100
Now available in DFN-3L1 package
– High voltage dual diode
– Vbr: 500V & 1000 V
– Very low leakage current : less than 5nA @ 1000V @ 25°C
– Low capacitance 50fF or 150fF typical
– Low reverse recovery time
Cobham MicrowaveDiodes BU presentation48
Single and Multi-Pad MOS capacitors :
– up to 30 GHz
– 40 to 500V voltage range
– 0,1 to 470 pF
– temperature coefficient : 50ppm / °C
– tolerance : • standard : 20%• option : down to 2 %
– multi-pad bar series available
– standard parts and specific on request : bare die only
5.7 MOS capacitors
January 2013
Cobham MicrowaveJanuary 2013Diodes BU presentation49
Diodes main popular package types
M208B BMH76
BH141
BH194
F27d BH142
BH158 BH300 BH204
SMD 4/6/8 (Melf) SOT143SOD323
All diodes can be supplied in bare dies
M208A
BH405
DFN 2L1
Cobham MicrowaveDiodes BU presentation50
Types Applications Vbr Junction Capacitance AdvantagesSeries Ref.
PIN
High power switching
500 to 3000 V Low Cj for a good isolation Cj(50V): 0,15 pF to 3 pF
Low Rs for lower ILRs : from 0,3 W to 0,7 W
DH80xxx
Fast switching 150 to 400 V Cj(50V): 0,04 pF to 0,17 pF I layer < 50µmt l : from 200 ns to 2000ns
DH50xxx
Ultra fast switching
30 to 100 V Cj(6V): 0,08 pF to 0,17 pF I layer < 10 µmt l : from 20 ns to 500 ns typical
DH50xxx
AGC,Attenuator
100V Cj(50V) : 0,1pF to 0,3 pF 1 W @ If=10 mA up to 100 W @ If=0,1 mA,10 W @ If=10 mA up to 300 W @ If=0,1 mA
DH40xxx
Limiter25 to 200 V Cj(0V): 0,14 pF to 0,45 pF Threshold @2,7 GHz:+10 to +20 dBm
Leak. power @2,7 GHz:+20 to +35 dBmPin max: 2 to 7 W
DH60xxx
Varactor
VCO (Voltage
Controlled Oscillators)
30 V, Q-factor: 300 to 4500
Cj(Vr4v): 0,4 to 100 pF Ct0/Ct30: 3,3 to 5,2 DH71xxx
45 V, Q-factor: 250 to 3000
Cj(Vr4v): 0,4 to 100 pF Ct0/Ct45: 3 to 6 DH72xxx
20 V Cj(Vr4v): 1,2 to 15 pF Ct0/Ct20: 5 to 7 DH76xxx
SRD Frequency Multiplier
25 V to 30 V Cj(6v): 0,3 pF to 12,5 pFSnap off time: 60ps to 150 ps DH54x
Up to 25 GHz Fout, 200 mW to 20 W Pout,Snap off time: 60 to 1000 ps
DH2xx
MOS Cap MOS Capacitor Up to 500V 0,1 to 470 pF Low temperature coefficient
Silicon Diode Product Line Summary
January 2013
Cobham MicrowaveCompany restricted
PIN Diode memento
Technical specificationsItems Conditions To be specify Unit Min Typical Max
Breakdown voltage : @ I r < 10 µA - V
Total capacitance : @ f = 1 MHz @ Vr = pF
Forward resistance Rsf : @ f = 120 MHz @ If = W
Minority carrier life time : If = 10 mA, Ir = 6 mA - µs
Package style :
Application :
• Switch (serie ? Parallel ?)
• Attenuator
• limiter
Frequency range
Input power : Peak W - -
Input power : CW W - -
Duty cycle :
Temperature range : °C
Cobham MicrowaveCompany restricted
Silicon Tuning Varactor memento
Items : Conditions To be specify at Unit Min Typical Max
Breakdown voltage : @ I r < 10 µA - V
Total capacitance :@ f = 1 MHz
@ Vr = 4V pF
@ Vr = 12V pF
@ Vr = 20V pF
@ Vr = 30V pF
Tuning ratio : @ f = 1 MHz
Ct 1V/Ct12V - - -
Ct 1V/Ct20V - - -
Ct 1V/Ct30V - - -
Figure of Merit : @f = 50 MHz, Vr=4V -
Temperature range : °C -
Package style :
Technical specifications
Cobham MicrowaveDiodes BU presentation53
Diodes dedicated toMRI market
January 2013
Cobham Microwave
6-Diodes dedicated to MRI
PIN diodes are used as the switching element in MRI coil switches
Diodes BU presentation54
Key figures for a diode dedicated for MRI :
•avoid to distort the magnetic field linked to coils must not contain any magnetic material•must not degrade Signal to Noise Ratio when switch is off •high parallel resistance at reverse bias•low loss when switch is on•low series resistance at forward bias•High RF power handling•low thermal resistance
January 2013
Cobham Microwave
Cobham P/N case
Anti parallel diodes DH52076-01DH54076-01
BH60BH61
High voltage diode SQM1250-40NDH80052-40NDH80055-40NDH80100-40N
SMD4AM
High voltage diode SQM1450-44NDH80106-44N
SMD8AM
High voltage diode DH80106-11NDH80159-11
BH158AMBH141 (mag)
3kV diodes DH80309DH80307
DH80289 (2800V)
BH158AMAlso availableBH141 (mag)BH300 (mag)
Diodes BU presentation55
BH60 BH158AMSMD8AMSMDxAM+LEADBH61
Stud
Isolated stud
6- Diodes dedicated to MRI
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Cobham MicrowaveDiodes BU presentation56
Diodes dedicated toSpace market
January 2013
Cobham MicrowaveJanuary 2013Diodes BU presentation57
Most popular packages :
M208
F27d
SILICON DIODES, MOS CAPACITOR : ESA QPL LIST
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Cobham MicrowaveJanuary 2013Diodes BU presentation58
ESCC5010 Generic normSILICON DIODES: ESA QPL LIST
ESCC web site: https://escies.org/
Sub-Families Types Detail Spec. Status
Tuning Varactors DH 76 XXX 5512/023Certificate 273D
Extended
Multipliers Varactors, DH 267, 252, 256, 292, 294 5512/016
Certificate 225EExtended
PIN, Fast Switching
DH 50151 – DH 50157 5513/031
DH 50201 – DH 50209 5513/033
DH 50251 – DH 50256 5513/034
PIN, Ultra Fast Switching
DH 50033 – DH 50037 5513/032
DH 50052 – DH 50057 5513/036
DH 50071 – DH 50077 5513/037
DH 50101 – DH 50107 5513/038
MOS CapacitorsTypes 101M, 201M, 400M
and 401M5711/002
Certificate 286A VOQ in progress
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file:///F:/Certificats & QPL/QPL MOS DH50xx DH2xx DH76xx.pdf
Cobham Microwave
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www.cobham.com/microwave
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