CMPEN411 Memory Chip Design Project ReportTHE PENNSYLVANIA STATE UNIVERSITY CMPEN411 Memory Chip Design Project Report RAM64X6,SERIAL RAM 64X4 and DPRAM64X4 Qianqian Zhang 3/9/2012

THE PENNSYLVANIA STATE UNIVERSITY

CMPEN411 Memory Chip Design Project Report

RAM64X6,SERIAL RAM 64X4 and DPRAM64X4

Qianqian Zhang

3/9/2012

A chip fabricated through MOSIS

1

Table of Content

Chapter 1 Introductory ........................................................................................................... 4

1.1 Project overview ................................................................................................................ 4

1.2 Objective ............................................................................................................................ 5

1.3 Memory Architectures ...................................................................................................... 6

1.4 Specifications ................................................................................................................... 12

1.5 Pin out and Pads .............................................................................................................. 12

1.6 Limitations of Design ..................................................................................................... 17

Chapter 2 Circuit Design ...................................................................................................... 18

2.1 Schematics and Layouts ...................................................................................................... 18

2.1.1RAM64x6 ...................................................................................................................... 18

2.1.2 SERIAL RAM 64X4 ..................................................................................................... 20

2.1.3 DPRAM64X4 .............................................................................................................. 22

2.1.4 RAMWORD64X1 ........................................................................................................ 24

2.1.5 SRAMWORD64X1 ..................................................................................................... 25

2.1.6 DPRAMWORD64X1 ................................................................................................... 26

2.1.7 RAMCELL ................................................................................................................... 27

2.1.8 SRAMCELL ................................................................................................................ 28

2.1.9 DPRAMCELL .............................................................................................................. 29

2.1.10 AND64X2 ............................................................................................................... 30

2.1.11 Address Decoder 6to64 ........................................................................................ 31

2

2.1.12 D Flip Flop ............................................................................................................ 32

2.1.13 And2 ....................................................................................................................... 34

2.1.14 And6 .......................................................................................................................... 35

2.1.15 Tristate buffer .......................................................................................................... 36

2.1.16 Inverter ...................................................................................................................... 37

Chapter 3 Circuit Performance ............................................................................................ 38

3.1 simulation result ................................................................................................................... 38

3.1.1 RAM64X6 .................................................................................................................... 38

3.1.2 SERIAL RAM 64X4 ..................................................................................................... 39

3.1.3 DPRAM64X4 ............................................................................................................... 40

3.2 Discussion of the simulation results .................................................................................... 41

Chapter 4 Verification .......................................................................................................... 42

4.1 DRC and LVS Verification .................................................................................................... 42

4.2 Simulation of Extracted View .............................................................................................. 43

4.2.1 RAM64X6 ...................................................................................................................... 43

4.2.2 Serial RAM 64X4 ............................................................................................................ 44

4.2.3 DPRAM64x4 .................................................................................................................. 44

4.2.4 Input Pad ..................................................................................................................... 46

4.2.5 Inout Pad ..................................................................................................................... 47

Chapter 5 Experimental Results .......................................................................................... 48

Chapter 6 Summary and Conclusion .................................................................................. 50

3

Appendix A ............................................................................................................................ 51

Appendix B ............................................................................................................................ 53

Appendix C ............................................................................................................................ 55

Appendix D ............................................................................................................................ 56

4

Chapter 1 Introductory 1.1 Project overview

This is a memory chip design project with CMPEN 411 class and extended to independent

study with design, fabrication, and testing. This chip design has three memories: a RAM64X6, a

SERIAL RAM 64X4 and a Dual Port Ram 64x4 based on ami06 (λ=0.3) technology. The logic

structure had been tested in VHDL running on Xilinx ISE 12.2 first. Due to the three memory

designs contains too many I/Os and fabrication pin number is fixed to be 40, some signals need

to share the same pin. However, the three memory chip can still work individually.

Figure 1.1 Final Layout Design

5

1.2 Objective

In Computer Architecture, memory is the device used to storage instructions or data. Memories

can be divided into volatile and non-volatile memory. And modern volatile semiconductor

memory is either static memory or dynamic memory. SRAM is generally more expensive and

faster than DRAM; so it always been designed for Cache in Memory Hierarchy system.

However, SRAM has a disadvantage compared to DRAM, that is, each SRAM cell takes more

space than a single DRAM cell. Therefore, to exploit more space for CPU processing while

ensure the memory itself can work properly, computer engineer have to work on squeeze

SRAM space but maintain the signal quality; this project is aiming at working on high quality

and fast memories.

qz1chip

1 d1p2

2 d2p3

3 d1p3

4 a1d3/i0(RAM)

5 a1d1/i1(RAM)

6 a1d2/i2(RAM)

7 a1d3/i3(RAM)

8 a1d4/I4(RAM)

9 a1d5/i5(RAM)

10 oe2

11 oe1

12 a2d5/a5(RAM)

13 a2d4/a4(RAM)

14 a2d3/a3(RAM)

15 a2d2/a2(RAM)

16 a2d1/a1(RAM)

17 a2d0/a0(RAM)

18 W

19 VDD

20 GND

d2p2 40

d1p1 39

d2p1 38

d1p0 37

d2p0 36

i3 (DPRAM) 35

i2 (DPRAM) 34

i1 (DPRAM) 33

i0 (DPRAM)/ i(ROM) 32

Q 31

Z3 (ROM) 30

Z2 (ROM) 29

Z1 (ROM) 28

Z0 (ROM) 27

D5 (RAM) 26

D4 (RAM) 25

D3 (RAM) 24

D2 (RAM) 23

D1 (RAM) 22

D0 (RAM) 21 Figure 1.2 Chip Package

6

1.3 Memory Architectures

Figure 1.3 RAM64X6 Logic Block

This RAM has 6 bit inputs and outputs, 64 address location. Inputs are i0 – i5 and

outputs are d0 – d5. AND Gate 64x2 module contains 64 AND Gates; for all the 64

AND Gates, they share the same input B from W signal and different input A from

the outputs of address decoder 6 to 64, which is t0 – t63. And the ramword64x1’s

logic structure is presented below:

7

Figure 1.4 ramword64x1 logic block

Each ramword64x1 has 64 ramcell. When the ramword been put together to form

the whole ram64x6, the input D0-D63 will be all connected to one bit of the input of

RAM; and the output Z0 – Z63 will also be connected to one bit of the output of

RAM. Besides, the CK signal will be controlled by the 6 to 64 address decoder and

the e0 – e63 signal will be all connected to OE signal.

8

Figure 1.5 SERIAL RAM 64X4 logic block

SERIAL RAM 64X4 has only one input i and five outputs. Outputs are Z0 – Z3 and

Q; Output Q is the output of the 64th address location. So only after 64 shift terms, Q

will equal to i. Z0 continues shifting one bit after input i, Z1 shifts one bit after Z0,

Z2 shifts one bit after Z1 and Z3 shifts one bit after Z2. T0-63 will be connected to

the W signal in SRAMWORD64x1. Below is the logic block for Serial Ram 64x1:

9

Figure 1.6 SRAMWORD64x1 logic block

Serial Ramword 64x1 logic block contains 64 data inputs D0 – D63 and 64 data

outputs Q0 – Q63. Each cell has an Output Enable signal. All the 64 SRAMCELL is

controlled by one single W signal. The difference between output Q and Z is, Q is

the output before tristate buffer but Z is the output after tristate buffer; so Z is

controlled by Output Enable signal but Q is not. And all the Z are actually also 64

bit but connected to a 64 bit bus.

10

Figure 1.7 DPRAM64X4 logic block

This dual port ram has 4 bit inputs and outputs. There are three address decoders

and they are all 6 to 64; one is for write, two for read. For the write address decoder,

its input is a0-a5; two read address decoders are for the two ports. At Port 1, the

address inputs are a1d0 – a1d5; at Port 2, the address inputs are a2d0 – d2d5. And

the data output from Port 1 is d0p1 – d5p1; and the data output from Port 2 is d0p2

– d5p2. In addition, a dpramword64x1 logic block is presented below

11

Figure 1.8 dpramword64x1 logic block

The module above has 64 dpramcells. All 64 dpramcells share the same D input, W

input does Write function when is it 1 and does read function when it is 0, two

different output enable signals individually control the two different output ports.

12

1.4 Specifications

Table 1.1 Specification

Name Specification

VSS GND

VDD 2.5V – 6V

1.5 Pin out and Pads Pin Pad Type Name Description

1 Inout d1p2 D2 of Port1 (DPRAM)

2 Inout d2p3 D3 of Port2 (DPRAM)

3 Input d1p3 D3 of Port1 (DPRAM)

4 Input a1d0/i0(RAM) a3 of Port 1(DPRAM) and i0 (RAM)

5 input a1d1/i1(RAM) a1 of Port 1(DPRAM) and i1 (RAM)

6 Input a1d2/i2(RAM) a2 of Port 1 (DPRAM) and i2 (RAM)


8 input a1d4/i4(RAM) a4 of Port 1 (DPRAM) and i4 (RAM)


10 Input Oe2 Output enable of port 2 of DPRAM

11 input Oe1 Output enable of RAM and ROM/output enable of the Port 1 of DPRAM

12 Input a2d5/a5 a5 of Port 2(DPRAM) and a5(RAM and ROM)


14 input a2d3/a3 a3 of Port 2(DPRAM) and a3(RAM and ROM)



17 input a2d0/a0 a0 of Port 2(DPRAM) and a0(RAM and ROM)

18 Input W W signal of DPRAM, RAM and ROM

19 VDD VDD VDD

20 GND GND GND

21 Inout D0(RAM) Data output of RAM



24 inout D3(RAM) Data output of RAM



27 Inout Z0(ROM) D0 of ROM

28 inout Z1(ROM) D1 of ROM



31 Inout Q Output of ROM

13

32 Input i0(DPRAM) Input of DPRAM




36 inout d2p0 D0 of Port 2 (DPRAM)

37 Input d1p0 D0 of Port 1 (DPRAM)



40 input d2p2 D2 of Port 2 (DPRAM)

14

Pin 15

Pin14 Pin 13

Pin 12

Pin 11

Pin 10

Pin 9 Pin 8 8

Pin 7

Pin 6

a2d2 a2 a2

a2d3 a3 a3

a2d4 a4 a4

a2d5 a5 a5

oe1 oe oe

oe2 a1d5 i5

a1d4 i4

a1d3 i3

a1d2 i2

Pin 16

a2d1 a1 a1

input input input input input input input input input

Input a1d1 i1)

Pin 5

Pin 17

a2d0 a0 a0

input Input a1d0 i0

Pin 4

Pin

18

W W W

Input Inout d1p3 Pin

3

Pin 19

VDD Input Inout d2p3 Pin 2

Pin 20

GND Input RAM 64X6

ROM 64X4

DPRAM 64X4

Inout d1p2 Pin 1

Pin 21

D0

Inout Inout d2p2 Pin 40

Pin

22

D1

Inout Inout d1p1 Pin

39

Pin 23

D2


Pin 24

D3


Pin 25

D4

Inout inout inout inout inout inout input input input

Inout input

d2p0 Pin 36

D5

Z0

Z1

Z2

Z3

Q i0

i

i1

i2

i3

Pin 26

Pin 27

Pin 28

Pin 29

Pin 30

Pin 31

Pin 32

Pin 33

Pin 34

Pin 35

Figure 1.9 overall pin layout

15

Figure 1.10 Pad_Input

Figure 1.11 Pad_Inout

16

Figure 1.12 Pin_VDD

Figure 1.13 Pin_gnd

17

1.6 Limitations of Design

Long poly wire had been used in address decoder to connect signals, which is

not good for signal connection quality.

Too many tristate buffer used. Since the pad design already equipped with

buffers, the output buffer used in the memory circuit design will be redundant.

To maintain enough voltage in all the components, a lot of contact should be

used. However, in this design, in order to put all three memory designs into the

limited size of layout (.9mm2 x .9mm2),

18

Chapter 2 Circuit Design

2.1 Schematics and Layouts

2.1.1RAM64x6

Figure 2.1.1 RAM64X6 schematic

The schematic above presents 8 symbols represents for address decoder 6 to 64, And

Gate 64x2 and 6 ramword64x1 separately. And they are connected with 64 bit buses.

Ramword64x1

And64x2 Address

Decoder

6 to 64

19

The output of each ramword64x1 is connected to a inverter buffer and those buffers are

controlled by a common output enable signal.

Figure 2.1.2 RAM64X6 Layout

On the module above, there are 8 long columns combined together. From the left to the

right, address decoder 6 to 64, and gate 64x2, and 6 ramword64x1. Also, there are 6

inverter buffers on the top of ramword64x1 which connect to the output.

20

2.1.2 SERIAL RAM 64X4

Figure 2.2.1 SERIAL RAM 64X4 Schematic

On the schematic, four big square symbols are representing SRAMWORD64x1 and

one big rectangular symbol on the left bottom side is representing address decoder 6

to 64. The buses connecting them are 64 bit. The outputs from each

SRAMWORD64x1 all goes to an inverter buffer which controlled by a common

output enable signal.

SRAMWORD64

x1

Address

Decoder

6 to 64

21

Figure 2.2.2 Serial RAM 64X4 Layout

This module consists of 5 long columns. From left to right, address decoder 6 to 64 and

4 romword64x1. On the top of 4 romword64x1, there are four tristate buffers.

22

2.1.3 DPRAM64X4

Figure 2.3.1 DPRAM64X4 schematic

On the schematic showed above, the four square symbols in the middle represents

four dpramword64x1. Three rectangular symbols represent address decoder 6 to 64.

The square symbol on the top is AND Gate 64x2. The difference between dpram and

ram is dpram has two output ports. Port 1 and Port 2 both have 4 bit outputs; and

they all goes to tristate buffers controlled by a common output enable signal.

Write address

Decoder 6 to 64

Port1 Read

address

Decoder

6 to 64

Port2 Read

address

Decoder

6 to 64

Dpramword64x1

AND Gate

64x2

23

Figure 2.3.2 DPRAM64X4 Layout

This module consists of 8 long columns. From the left to right, read port 1 address decoder 6 to

64, address decoder 6 to 64 write port, and gate 64x2, 4 dual port ramwords, and read port 2

address decoder 6 to 64.

24

2.1.4 RAMWORD64X1

Figure 2.4.1 ramword64x1 schematic

Figure 2.4.2 ramword64x1 layout

This module consists of 64 ramcells which form a column. Both the schematics and

layout pictures well present how the 64 ramcells are connected by buses.

25

2.1.5 SRAMWORD64X1

Figure 2.5.2 SRAMWORD64x1 schematic Figure 2.5.1 serial ram 64x1 layout

26

2.1.6 DPRAMWORD64X1

Figure 2.6.1 dpramword64x1 schematic

Figure 2.6.2 dpramword64x1 layout

27

2.1.7 RAMCELL

Figure 2.7.1 ramcell schematic

The ramcell is basically a D Flip Flop plus an inverter and a tristate buffer. To put all

the transistors in a minimum area, I even used metal 3 to connect some signals.

Figure 2.7.2 ramcell layout

28

2.1.8 SRAMCELL

Figure 2.8.1 SRAMCELL schematic

Figure 2.8.2 Serial RAM cell layout

29

2.1.9 DPRAMCELL

Figure 2.9.1 dpramcell schematic

Figure 2.9.2 Dual Port RAM cell Layout

Dual Port Ram cell is obviously larger than ramcell and serial ram cell because it

has two output ports. Even though I used metal 1, metal 2 and metal 3 to connect

this single cell, I only use metal 3 to connect signals vertically and metal 2 to

connect signals horizontally.

30

2.1.10 AND64X2

Figure 2.10.1 And Gate 64x2 schematic Figure 2.10.2 AND Gate 64x2 layout

This module is different from the other 64 bit module that I built before; the 64 AND

Gates in the column does not connected to each other, they are individually working

component.

31

2.1.11 Address Decoder 6to64

Figure 2.11.1 6 to 64 address decoder schematic

Figure 2.11.2 address decoder 6 to 64 layout

This module consists 64 AND Gates and 6 inverters on the top for the inputs. 6 inveters

works as decoder to specify 64 address location.

32

2.1.12 D Flip Flop

Figure 2.12.1 D Flip Flop Schematic

33

Figure 2.12.2 D Flip Flop Layout

34

2.1.13 And2

Figure 2.13.1 AND2 Gate schematic

Figure 2.13.2 AND 2 Gate layout

35

2.1.14 And6

Figure 2.14.1 AND6 Gate schematic

Figure 2.14.2 AND 6 Gate layout

To reduce delay due to fan-in, I used two 3 input AND Gate, and connect them to a 2

input AND Gate.

36

2.1.15 Tristate buffer

Figure 2.15.1 inverter buffer schematic

Figure 2.14.2 Tristate Buffer

Layout

37

2.1.16 Inverter

Figure 2.16.1 inverter schematic Figure 2.16.2 Inverter

layout From the schematic to layout, even though this is a simple component, I tried my best to put the two transistors within the minimum area. In the layout, the distance between PMOS and NMON is the minimum distance required. Also, for all the connecting wires used such as poly and metal 1, they are all built with minimum width. Because this component will be

used very often in larger component, it naturally has a larger demand in smaller size design.

38

Chapter 3 Circuit Performance

3.1 simulation result

3.1.1 RAM64X6

Figure 3.1 RAM64X4 Schematic Simulation

In the simulation above, the first four clock cycles are writing cycles and the last four

clock cycles are reading cycles. I wrote data #101010, #010101, #000000 and #111111

into address location 0, 1, 2 and 3 sequentially; and then reading from address location 0,

1, 2 and 3, result datum are #101010, #010101, #000000 and #111111 which confirmed

what I stored into the memory.

39

3.1.2 SERIAL RAM 64X4

Figure 3.2 Serial RAM 64x4 Schematic Simulation

This Serial RAM 64x4 has an input i, and Z0 outputs shift one bit after it; Z1 shifts one

bit after Z0, Z2 shifts one bit after Z1; Z3 shifts one bit after Z2. Q is supposed to output

I after 64 cycles but did not show on the simulation result due to timing is not long

enough.

40

3.1.3 DPRAM64X4

Figure 3.3 DPRAM64x4 schematic simulation

In the first four cycles are writing cycles, the last four cycles are reading cycles. During

the writing cycles, I wrote #1011, #0100, #1001 and #0010 into address location 000000,

010101, 101010 and 111111 sequentially. Then I read data from memory address location

000000, 010101, 101010 and 111111 from both ports at the same time. The resulting data

are corresponded to those that I input.

41

3.2 Discussion of the simulation results

On the simulation result of RAM64X4 schematic, the worst delay is 10ns at the reading

cycle. For Serial RAM 64x4, the worst delay is 2.5 ns. And the DPRAM 64X4 has a worst

delay of 12ns.

42

Chapter 4 Verification

4.1 DRC and LVS Verification

All the components of the three memory chip design had passed DRC checking and the

netlists and schematics matched in the LVS Verification. No error found. The net list

generated by LVS Verification of all three memory designs are listed in Appendix D.

43

4.2 Simulation of Extracted View

4.2.1 RAM64X6

Figure 4.1 RAM64X6 extracted file simulation

44

4.2.2 Serial RAM 64X4

4.2.3 DPRAM64x4

Figure 4.2 Serial RAM 64x4 extracted file simulation

Figure 4.3 DPRAM64X4 extracted file simulation

46

4.2.4 Input Pad

Figure 4.4 Input Pad layout extracted file simulation

47

4.2.5 Inout Pad

Figure 4.5 Inout Pad extracted file simulation

48

Chapter 5 Experimental Results

I used PIC18F4550 microprocessor to send out input lines and wrote PicBasic Code to

run the test circuit. The microprocessor is a EEPROM and the code was written in PICit

2 software and programmed to the chip from a USB port connected to my laptop. The

test circuit layout (See Appendix C) was designed on Multisim and Ultiboard.

Figure 5.1 Rising edge

On the oscilloscope screen shot, each grid is 10ns. So the delay of the rising edge is

approximately 15ns.

49

Figure 5.2 Falling Edge

On the screen shot above, each grid is 10ns. Therefore, the delay of the falling edge is

approximately 20ns.

Due to the limited test time, our recent testing result has not yet showed the memory chip

functioning as expected. The output from oscilloscope only shows it will be up and down with

OE signal but it did not show any reading or writing from the memory chip. If we still have

some time in the future, a full complete testing will be conducted to fully test the chip’s

functionality.

50

Chapter 6 Summary and Conclusion

This is a large project and it still worth to optimize. The delay measured from the real

experiment test is greater the simulation test. I think one of the advantages of this

memory design is the D Flip Flop design. A good D Flip Flop design will squeeze the

whole memory area and maintain the good quality signal processing. Also, 64-cell

column model design plays an important role in each memory’s floor plan.

The designing cost for this project is almost free because I did work on Solaris Machine

provided by CSE department of Pennsylvania State University. A test circuit board cost

$25 ordered on PCBnet.com; the PIC18F4550 chip and chip programming board is from

the tool that I used in my Embedded Systems Course. A power consumption analysis

of each memory is listed below:

Memory Aear(um2) T(ns) Power dissipation(um2•ns2)

RAM64x6 213.85x873.45 10 1860448.5

Serial RAM 64x4 151.85x860.7 2.5 326743.2375

DPRAM 64x4 280.05x878.7 12 2952959.22

However, due to long poly wire used and redundant tristate buffers used in the circuit

design, this project still have obvious defects. If I had one more chance to redesign this

chip, I will test the inner circuit with pad together and see the real delay in simulation.

Furthermore, there is still a lot to think about improvement in the memory floor plan.

Because memory is a basic device in processor, the inputs and outputs need to be

connected to the controls of the processor; a vertical rectangular shape of memory

might not be a good shape to adjust to the other component of processors. Next time, I

will try to design the memory in square shape (approximately) which can be laid in the

middle of a processor and easily have inputs and outputs connected to other controls.

51

Appendix A

Figure A.1 real chip side

Figure A.2 real chip top face

52

Figure A.3 real chip top2

53

Appendix B

Figure B.3.2x

54

Figure B.10x

55

Appendix C

Figure C.1 test PCB layout view

56

Appendix D

RAM64X6

@(#)$CDS: LVS version 6.1.4-64b 03/30/2011 00:45 (sjfdl230) $

Command line: /home/software/cadence-2009/IC610/tools.lnx86/dfII/bin/64bit/LVS -dir

/home/noncse/qxz5010/c411/pj/LVS -l -s -t /home/noncse/qxz5010/c411/pj/LVS/layout

/home/noncse/qxz5010/c411/pj/LVS/schematic

Like matching is enabled.

Net swapping is enabled.

Using terminal names as correspondence points.

Compiling Diva LVS rules...

Net-list summary for /home/noncse/qxz5010/c411/pj/LVS/layout/netlist

count

3246 nets

22 terminals

3608 pmos

3608 nmos

Net-list summary for /home/noncse/qxz5010/c411/pj/LVS/schematic/netlist

count

3246 nets

22 terminals

3608 pmos

3608 nmos

Terminal correspondence points

N3231 N140 W

N3237 N150 a0

N3236 N141 a1

N3235 N151 a2

57

N3234 N143 a3

N3233 N155 a4

N3232 N139 a5

N3229 N100 d0

N3228 N138 d1

N3227 N88 d2

N3226 N152 d3

N3225 N137 d4

N3224 N146 d5

N3230 N0 gnd!

N3244 N153 i0

N3243 N131 i1

N3242 N147 i2

N3241 N144 i3

N3240 N148 i4

N3239 N93 i5

N3245 N133 oeb

N3238 N1 vdd!

Devices in the netlist but not in the rules:

pcapacitor

Devices in the rules but not in the netlist:

cap nfet pfet nmos4 pmos4

The net-lists match.

layout schematic

instances

un-matched 0 0

rewired 0 0

size errors 0 0

pruned 0 0

active 7216 7216

total 7216 7216

58

nets

un-matched 0 0

merged 0 0

pruned 0 0

active 3246 3246

total 3246 3246

terminals

un-matched 0 0

matched but

different type 0 0

total 22 22

Probe files from /home/noncse/qxz5010/c411/pj/LVS/schematic

devbad.out:

netbad.out:

mergenet.out:

termbad.out:

prunenet.out:

prunedev.out:

audit.out:

Probe files from /home/noncse/qxz5010/c411/pj/LVS/layout

devbad.out:

59

netbad.out:

mergenet.out:

termbad.out:

prunenet.out:

prunedev.out:

audit.out:

Serial RAM 64x4










count

2273 nets

16 terminals

2514 pmos

2514 nmos


count

60

2273 nets

16 terminals

2514 pmos

2514 nmos


N2261 N332 Q

N2260 N329 W

N2268 N335 a0

N2267 N7 a1

N2266 N63 a2

N2265 N6 a3

N2264 N5 a4

N2263 N4 a5

N2259 N0 gnd!

N2258 N333 i

N2262 N334 oe

N2269 N1 vdd!

N2273 N336 z0

N2272 N337 z1

N2271 N338 z2

N2270 N62 z3


pcapacitor




layout schematic

instances

un-matched 0 0

rewired 0 0

61

size errors 0 0

pruned 0 0

active 5028 5028

total 5028 5028

nets

un-matched 0 0

merged 0 0

pruned 0 0

active 2273 2273

total 2273 2273

terminals

un-matched 0 0

matched but

different type 0 0

total 16 16


devbad.out:

netbad.out:

mergenet.out:

termbad.out:

prunenet.out:

prunedev.out:

audit.out:

62


devbad.out:

netbad.out:

mergenet.out:

termbad.out:

prunenet.out:

prunedev.out:

audit.out:

DPRAM 64X4










count

4173 nets

35 terminals

4650 pmos

63

4650 nmos


count

4173 nets

35 terminals

4650 pmos

4650 nmos


N4169 N20 a1d0

N4168 N30 a1d1

N4167 N194 a1d2

N4166 N195 a1d3

N4165 N102 a1d4

N4164 N76 a1d5

N4148 N124 a2d0

N4147 N182 a2d1

N4146 N183 a2d2

N4145 N184 a2d3

N4144 N185 a2d4

N4143 N31 a2d5

N4154 N297 ai0

N4153 N35 ai1

N4152 N298 ai2

N4151 N37 ai3

N4150 N151 ai4

N4149 N29 ai5

N4161 N34 d0p1

N4160 N32 d0p2

N4140 N19 d1p1

N4139 N190 d1p2

N4163 N122 d2p1

N4162 N191 d2p2

64

N4142 N36 d3p1

N4141 N192 d3p2

N4138 N0 gnd!

N4159 N189 i0

N4158 N33 i1

N4157 N186 i2

N4156 N187 i3

N4171 N188 oe1

N4170 N296 oe2

N4155 N1 vdd!

N4172 N28 w


pcapacitor




layout schematic

instances

un-matched 0 0

rewired 0 0

size errors 0 0

pruned 0 0

active 9300 9300

total 9300 9300

nets

un-matched 0 0

merged 0 0

pruned 0 0

active 4173 4173

total 4173 4173

65

terminals

un-matched 0 0

matched but

different type 0 0

total 35 35


devbad.out:

netbad.out:

mergenet.out:

termbad.out:

prunenet.out:

prunedev.out:

audit.out:


devbad.out:

netbad.out:

mergenet.out:

termbad.out:

prunenet.out:

66

prunedev.out:

audit.out:

Documents

CMPEN411 Memory Chip Design Project ReportTHE PENNSYLVANIA STATE UNIVERSITY CMPEN411 Memory Chip Design Project Report RAM64X6,SERIAL RAM 64X4 and DPRAM64X4 Qianqian Zhang 3/9/2012