Characterization of 150m thick epitaxial silicon pad detectors from different producers

after 24 GeV/c proton irradiation

Herbert HoedlmoserHerbert Hoedlmoser(1)(1), , Michael MollMichael Moll(1)(1), , Jaako HaerkoenenJaako Haerkoenen(2)(2), Katharina Kaska, Katharina Kaska(1)(1), , Matthias KronbergerMatthias Kronberger(1)(1), Julia Trummer, Julia Trummer(1)(1), Pierre Rodeghiero, Pierre Rodeghiero(3)(3)

(1)(1) CERN- PH-DT2 - Geneva – Switzerland CERN- PH-DT2 - Geneva – Switzerland(2) (2) Helsinki Institute of Physics – Helsinki - FinlandHelsinki Institute of Physics – Helsinki - Finland

(3) (3) UniversitUniversitéé Catholique de Louvain – Louvain - Belgium Catholique de Louvain – Louvain - Belgium

10th RD50 Workshop on Radiation hard semiconductor devices for very high luminosity colliders, Vilnius, Lithuania, 4-6 June 2007

Material, Detectors, Irradiation and Measurements Detector Characterization (IV, CV, CCE, TCT) Comparison to previous work Preliminary conclusions, open questions and further work

Outline:

Michael Moll – 10th RD50 Workshop, June 2007 -2-

RD50 The epitaxial silicon Produced by ITME (Institute of Electronic Materials Technology, Warzawa, Poland)

100 mm wafer n-type silicon

Epi-layer: 150m, <111>, P-doped, ~500 cm Substrate: 525m, <111>, Sb-doped, 0.015 cm

p-type silicon Epi-layer: 150m, <111>, P-doped, ~1000 cm Substrate: 525m, <111>, B-doped, 0.015 cm

0 50 100 150 200depth [m]

10-210-1100101102103

resi

stiv

ity [c

m]

p-type

n-type

[M.Moll]

Spreading Resistance Measurement (ITME)

Michael Moll – 10th RD50 Workshop, June 2007 -3-

RD50 The detectors

Detectors produced from epi-wafers of same batch by: CNM (Centro National de Microelectronics, Barcelona, Spain) ITC-IRST (Microsystems Division, Povo, Trento, Italy) HIP (Helsinki Institute of Physics, Helsinki, Finland)

different masks used (some containing also strip detectors)

Michael Moll – 10th RD50 Workshop, June 2007 -4-

RD50 Detectors from CNM Barcelona Detectors from pure pad mask (CERN-RADMON project)

CNM-11 & CNM-22 size 0.5 x 0.5 cm2

9 guard rings p-type: p-stop ring

Detectors from strip mask (RD50 project) RD50-16 & RD50-23 size 0.5 x 0.5 cm2

x guard rings x-type: x-spray

0.5 cm

0.5 cm

Michael Moll – 10th RD50 Workshop, June 2007 -5-

RD50 Detectors from IRST and HIP HIP detectors - pure pad mask (CERN-RADMON project)

HIP-004 size 0.5 x 0.5 cm2

17 guard rings only n-type used

Detectors from strip mask (SMART-RD50 project) ITC-W11 size 0.37 x 0.37 cm2

11 guard rings only n-type used

Michael Moll – 10th RD50 Workshop, June 2007 -6-

RD50 Before irradiation

Detector series Depletion Voltage (CV)

Vdep [V]

HIP-004 (n-type) 147.4 + 3.6

ITC-W11 (n-type) 150.0 + 4.9

CNM-11 (n-type) 154.6 + 7.5

RD50-23 (n-type) 155.0 + 3.8

CNM-22 (p-type) 213.7 + 12.7

Michael Moll – 10th RD50 Workshop, June 2007 -7-

RD50 Experimental procedure C/V and I/V measurements

measured at room temperature (and at -10C); parallel mode 10KHz (and at 120Hz)

CCE measurements NIKHEF setup (details in presentation of H.Hoedlmoser - last RD50 Workshop) 90Sr – source; 2.5 s shaping time; noise 567e- + 4.26e-/pF measured mainly at -22±1C

TCT measurements RD39 setup at CERN used (details given in Jaakko’s talk) 2 lasers used:

• infrared laser – simulation of mips• red laser – front illumination only

Irradiation 24 GeV/c protons at the CERN PS

Annealing 4min at 80C

Michael Moll – 10th RD50 Workshop, June 2007 -8-

RD50 leakage current after irradiation

CNM detectors: Increase of leakage current around 300V caused noise problems for CCE measurements

0 100 200 300 400 500 60010-6

1x10-5

1x10-4

10-3

HIP-004-B (4min 80C)

4.78e13 p/cm2 1.32e14 2.27e14 5.10e14 1.30e15 2.64e15 3.06e15 3.06e15

I[A]

bias voltage [V]

0 100 200 300 400 500 6001E-6

1E-5

1E-4

1E-3

CNM-11-E (4min 80C)

4.78e13 1.32e14 p/cm2

2.27e14 5.10e14 1.30e15 2.64e15 3.06e15 3.06e15

I [A

]

bias voltage [V]

Michael Moll – 10th RD50 Workshop, June 2007 -9-

RD50 Leakage current

1013 1014 101510-3

10-2

10-1

I

/Vo

l [A

cm-3]

eq

[cm-2]

CNM-11 HIP-004-B ITC-W11 CNM-22 (p-type) RD50-23-P linear fit through (0/0):

= 4.1x10-17 A cm-1

4 min 80°C

Michael Moll – 10th RD50 Workshop, June 2007 -10-

RD50 Depletion Voltage

0.0 5.0x1014 1.0x1015 1.5x1015 2.0x1015 2.5x1015

0

1x1013

2x1013

3x1013

4x1013

5x1013

gy=0.0125 cm-1

gy=0.024 cm-1

gy=0.019 cm-1

gy=0.018 cm-1

|N

eff|

[cm

-3]

eq

[cm-2]

HIP-004 n-type ITC-W11 n-type CNM-11 n-type RD50-23 n-type CNM-22 p-type

0

100

200

300

400

500

600

700

800

VD

EP [V

]

4 min 80°C

Michael Moll – 10th RD50 Workshop, June 2007 -11-

RD50 TCT measurements (red laser)

0 2 4 6 8 10 12 14 16 18 20

0.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

0.22

0.24CNM-22-42 150 m EPI p-type

2.3x1014 p/cm2

4 min @ 80 OC

am

plit

ud

e [V

]

time [ns]

0 V 20 V 40 V 60 V 80 V 100 V 120 V 140 V 160 V 180 V 200 V

p-type epi silicon after 2.3x1014 p/cm2

data not corrected for trapping demonstrating that p-type has been inverted to n-type

Michael Moll – 10th RD50 Workshop, June 2007 -12-

RD50 CCE measurements

0 50 100 150 200 250 3000

2000

4000

6000

8000

10000

12000

14000CNM-11

colle

cte

d c

ha

rge

[e- ]

bias voltage [V]

reference 1 (CNM-11-49) meas. 1 reference 1 (CNM-11-49) meas. 2 reference 2 (CNM-11-35) meas. 1 reference 2 (CNM-11-35) meas. 2

= 4.8x1013 p/cm2 (CNM-11-29)

= 1.3x1014 p/cm2 (CNM-11-81)

0 50 100 150 200 250 300 350 400 4500

2000

4000

6000

8000

10000

12000

14000RD50-23-p

reference (RD50-23-p10) meas. 1 reference (RD50-23-p10) meas. 2

= 4.8x1013 p/cm2(RD50-23-p05)

= 1.3x1014 p/cm2(RD50-23-p08)

= 2.3x1014 p/cm2(RD50-23-p06)

= 5.1x1014 p/cm2(RD50-23-p03)

= 1.3x1015 p/cm2(RD50-23-p07)

colle

cte

d c

ha

rge

[e- ]

bias voltage [V]

Michael Moll – 10th RD50 Workshop, June 2007 -13-

RD50 CCE measurements

0.0 2.0x1014 4.0x1014 6.0x1014 8.0x1014

6000

8000

10000

12000

co

llect

ed

ele

ctro

ns

(fu

lly d

ep

lete

d)

eq

[cm-2]

W-11 (n-type) HIP-004 (n-type) CNM-22 (p-type) RD50-23 (n-type) CNM-11 (n-type)

Michael Moll – 10th RD50 Workshop, June 2007 -14-

RD50 TCT – Infrared laser

Sharp drop in CCE at low fluences observed also with infrared laser (RD39 TCT setup)

Michael Moll – 10th RD50 Workshop, June 2007 -15-

RD50 Depletion Voltage (CV)

0.0 5.0x1014 1.0x1015 1.5x1015 2.0x1015 2.5x1015

0

1x1013

2x1013

3x1013

4x1013

5x1013

gy=0.0125 cm-1

gy=0.024 cm-1

gy=0.019 cm-1

gy=0.018 cm-1

|Nef

f| [c

m-3

]

eq

[cm-2]

HIP-004 n-type ITC-W11 n-type CNM-11 n-type RD50-23 n-type CNM-22 p-type

0

100

200

300

400

500

600

700

800

VD

EP [V

]

4 min 80°C

Neutron irradiation

0

100

200

300

400

500

600

700

800

0.0E+00 1.0E+15 2.0E+15 3.0E+15

fluence [cm-2]

Vd

ep [

V]

HIP-004-B

CNM-11CNM-22

gc=0.83x10-13 Vcm-2

gy =0.0048 cm-1

gc=0.73x10-13 Vcm-2

gy =0.0043 cm-1

24 GeV/c protons Neutrons (Ljubljana)

preliminary data(1.6.2007)

Michael Moll – 10th RD50 Workshop, June 2007 -16-

RD50 Summary

leakage current increase as expected (same for all detectors) increase of Vdep (donor generation) depending on processing – different for

different manufacturers net space charge remains positive for n-type epi (no type inversion) net space charge becomes positive for p-type epi (inversion to n-type) unusual drop in CCE observed in low fluence range

neutron irradiated samples under investigation preliminary data presented (less pronounced increase in depletion voltage !)

24 GeV/c proton irradiated n- and p-type 150 m thick epitaxial detectors manufactured by 3 different producers have been investigated:

ongoing work:

Michael Moll – 10th RD50 Workshop, June 2007 -17-

RD50

0 100 200 300 400 500 6001E-6

1E-5

1E-4

1E-3

W11 (4 min @ 80oC) 4.78e13 1.32e14 p/cm2

2.27e14 5.10e14 1.30e15 2.64e15 3.06e15 3.06e15

I [A

]

bias voltage [V]

IV – ITC samples

Michael Moll – 10th RD50 Workshop, June 2007 -18-

RD50

0 100 200 300 400 500 6001E-6

1E-5

1E-4

1E-3

CNM-11-E (4min 80C)

4.78e13 1.32e14 p/cm2

2.27e14 5.10e14 1.30e15 2.64e15 3.06e15 3.06e15

I [A

]

bias voltage [V]

IV – CNM samples