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Changing Device Parameters in PSpice
Device Model: Diode
PSpice
• Simplest diode model in PSpice uses only the ideal diode equation
• More complex diode models in PSpice include:– Parasitic resistances to account for the linear regions– Breakdown voltage with current multipliers to map the
knee between Io and the current at breakdown
– Temperature dependences of various parameters– Parasitic capacitances to account for the frequency
dependence
PSpice
• Device Simulation packages– Capture– Schematics
• The calculations performed will be identical when using the same device models.
• The GUIs are not the same.• There are minor differences in how the programs
interprets some changes that you make to the device models.
PSpice Schematics
Device Parameters*** Power Diode *** Type of Diode
.MODEL D1N4002-X D Part Number
( IS=14.11E-9 Reverse Saturation Current
N=1.984 Ideality Factor
RS=33.89E-3 Forward Series Resistance
IKF=94.81 High-Level Injection Knee Current in Forward Bias
XTI=3 Temperature Dependence of Reverse Saturation Current
EG=1.110 Energy Bandgap of Si
CJO=51.17E-12 Junction Capacitance at Zero Applied Bias
M=.2762 Grading Coefficient Inversely Proportional to Zener Resistance
VJ=.3905 Turn-on Voltage
FC=.5 Coefficient Associated with Forward Bias Capacitance
ISR=100.0E-12 Reverse Saturation Current During Reverse Bias
NR=2 Ideality Factor During Reverse Bias
BV=100.1 Breakdown Voltage
IBV=10 Current at Breakdown Voltage
TT=4.761E-6 ) Transit Time of Carriers Across p-n Juntion
PSpice Capture
Editing Device Model
• The device parameters can be changed, but will only be changes for the file that you are currently working on. – In Schematics, the changes only apply to the specific
part that you had highlighted when you made the changes.
– In Capture, the changes apply to all components in the file that share the same part model.
– To simulate the Ideal Diode Equation, you can delete the other parameters or set them to zero or a very large number, depending on what would be appropriate to remove their effect from the simulation