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    2006-11-091

    TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

    2SC2383

    Color TV Vertical Deflection Output Applications

    Color TV Class-B Sound Output Applications

    High breakdown voltage: VCEO= 160 V

    Large continuous collector current capability

    Recommended for vertical deflection output & sound output

    applications for line-operated TVs.

    Complementary to 2SA1013

    Absolute Maximum Ratings (Ta = 25C)

    Characteristics Symbol Rating Unit

    Collector-base voltage VCBO 160 V

    Collector-emitter voltage VCEO 160 V

    Emitter-base voltage VEBO 6 V

    Collector current IC 1 A

    Base current IB 0.5 A

    Collector power dissipation PC 900 mW

    Junction temperature Tj 150 C

    Storage temperature range Tstg 55 to 150 C

    Note: Using continuously under heavy loads (e.g. the application of high

    temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

    decrease in the reliability significantly even if the operating conditions (i.e. operating

    temperature/current/voltage, etc.) are within the absolute maximum ratings.

    Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

    (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

    and estimated failure rate, etc).

    Unit: mm

    JEDEC TO-92MOD

    JEITA

    TOSHIBA 2-5J1A

    Weight: 0.36 g (typ.)

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    Electrical Characteristics (Ta = 25C)

    Characteristics Symbol Test Condition Min Typ. Max Unit

    Collector cut-off current ICBO VCB= 150 V, IE= 0 1.0 A

    Emitter cut-off current IEBO VEB= 6 V, IC= 0 1.0 A

    Collector-emitter breakdown voltage V (BR) CEO IC= 10 mA, IB= 0 160 V

    DC current gainhFE

    (Note)VCE= 5 V, IC= 200 mA 60 320

    Collector-emitter saturation voltage VCE (sat) IC= 500 mA, IB= 50 mA 1.5 V

    Base-emitter voltage VBE VCE= 5 V, IC= 5 mA 0.45 0.75 V

    Transition frequency fT VCE= 5 V, IC= 200 mA 20 100 MHz

    Collector output capacitance Cob VCB= 10 V, IE= 0, f = 1 MHz 20 pF

    Note: hFEclassification R: 60 to 120, O: 100 to 200, Y: 160 to 320

    Marking

    C2383

    Lot No.

    A line indicateslead (Pb)-free package orlead (Pb)-free finish.

    Characteristicsindicator

    Part No. (or abbreviation code)

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    Colle

    ctor-emittersaturationvoltage

    VCE

    (sat)

    (V)

    Collector-emitter voltage VCE (V)

    IC VCE

    Collectorcurrent

    IC

    (A)

    Collector current IC (mA)

    hFE IC

    DC

    currentgain

    h

    FE

    Collector current IC (mA)

    VCE (sat) IC

    Collector current IC (mA) Base-emitter voltage VBE (V)

    IC VBE

    Collectorcurrent

    IC

    (A)

    Collector current IC (mA)

    hFE IC

    D

    C

    currentgain

    hFE

    Collector-emittersaturationvoltage

    VCE

    (sat)

    (V)

    VCE (sat) IC

    3010 100 300

    500

    100

    10

    30

    50

    1000

    300

    Common emitter

    Ta = 25C

    VCE= 2 V

    5

    10

    1.0

    00

    0.6

    0.4

    0.2

    0.2 0.4 0.6

    Common emitter

    IC/IB= 10

    Ta = 100C

    0.8

    025

    1.0 1.2 1.4

    0.8

    105 30 100 300

    0.5

    0.1

    0.01

    0.03

    0.05

    1000

    0.3Common emitter

    IC/IB= 10

    Ta = 100C

    25

    0

    3010 100 300

    500

    100

    10

    30

    50

    1000

    300

    Common emitter

    VCE= 10 V

    VCE= 5 V

    Ta = 100C

    250

    1.0

    00

    0.6

    0.4

    0.2

    4 8 12

    Common emitter

    Ta = 25C10

    6

    IB= 0.5 mA

    15

    16

    4

    3

    2.5

    20 24 28

    0.8

    2

    1.5

    1

    0

    105 30 100 300

    0.5

    0.1

    0.01

    0.03

    0.05

    1000

    0.3Common emitter

    Ta = 25C

    IC/IB= 10

    5

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    Collector-base voltage VCB (V)

    Collectoroutputca

    pacitance

    Cob

    (pF

    )

    Cob VCB

    Transitionfrequency

    fT

    (MHz)

    Collector current IC (mA)

    Collector-emitter voltage VCE (V)

    Safe Operating Area

    Collectorcurrent

    IC

    (A)

    fT IC

    500

    10

    100

    30

    50

    3 10 30

    Common emitter

    Ta = 25C

    VCE= 5 V

    2

    100 300

    300

    31 10 30

    100

    30

    2

    5

    10

    100

    50

    Common emitter

    f = 1 MHz

    Ta = 25C

    3 10 30

    3

    0.5

    0.005

    0.1

    0.3

    300

    1

    *: Single nonrepetitive pulse

    Ta = 25C

    Curves must be derated linearly

    with increase in temperature. VCEOmax

    ICmax (pulsed)*

    1 ms*100 ms*

    ICmax = 1 A

    DC operation Ta = 25C

    10 ms*

    0.03

    0.01

    0.05

    100

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    RESTRICTIONS ON PRODUCT USE20070701-EN

    The information contained herein is subject to change without notice.

    TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor

    devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical

    stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of

    safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure ofsuch TOSHIBA products could cause loss of human life, bodily injury or damage to property.

    In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as

    set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and

    conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability

    Handbook etc.

    The TOSHIBA products listed in this document are intended for usage in general electronics applications

    (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,

    etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires

    extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or

    bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or

    spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,

    medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in hisdocument shall be made at the customers own risk.

    The products described in this document shall not be used or embedded to any downstream products of which

    manufacture, use and/or sale are prohibited under any applicable laws and regulations.

    The information contained herein is presented only as a guide for the applications of our products. No

    responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which

    may result from its use. No license is granted by implication or otherwise under any patents or other rights of

    TOSHIBA or the third parties.

    Please contact your sales representative for product-by-product details in this document regarding RoHS

    compatibility. Please use these products in this document in compliance with all applicable laws and regulations

    that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses

    occurring as a result of noncompliance with applicable laws and regulations.