BYM36E.pdf

DATA SHEET

Product specificationSupersedes data of 1996 May 30

1996 Sep 18

DISCRETE SEMICONDUCTORS

BYM36 seriesFast soft-recoverycontrolled avalanche rectifiers

handbook, 2 columns

M3D118

1996 Sep 18 2

Philips Semiconductors Product specification

Fast soft-recoverycontrolled avalanche rectifiers BYM36 series

FEATURES Glass passivated High maximum operating

temperature Low leakage current Excellent stability Guaranteed avalanche energy

absorption capability Available in ammo-pack Also available with preformed leads

for easy insertion.

DESCRIPTIONRugged glass SOD64 package, usinga high temperature alloyedconstruction.

This package is hermetically sealedand fatigue free as coefficients ofexpansion of all used parts arematched.

Fig.1 Simplified outline (SOD64) and symbol.

2/3 page (Datasheet)

MAM104

k a

LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CONDITIONS MIN. MAX. UNITVRRM repetitive peak reverse voltage

BYM36A 200 VBYM36B 400 VBYM36C 600 VBYM36D 800 VBYM36E 1000 VBYM36F 1200 VBYM36G 1400 V

VR continuous reverse voltageBYM36A 200 VBYM36B 400 VBYM36C 600 VBYM36D 800 VBYM36E 1000 VBYM36F 1200 VBYM36G 1400 V

IF(AV) average forward current Ttp = 55 C; lead length = 10 mm;see Figs 2; 3 and 4averaged over any 20 ms period;see also Figs 14; 15 and 16

BYM36A to C 3.0 ABYM36D and E 2.9 ABYM36F and G 2.9 A

IF(AV) average forward current Tamb = 65 C; PCB mounting (seeFig.25); see Figs 5; 6 and 7averaged over any 20 ms period;see also Figs 14; 15 and 16

BYM36A to C 1.25 ABYM36D and E 1.20 ABYM36F and G 1.15 A

1996 Sep 18 3



ELECTRICAL CHARACTERISTICSTj = 25 C unless otherwise specified.

IFRM repetitive peak forward current Ttp = 55 C; see Figs 8; 9 and 10BYM36A to C 37 ABYM36D and E 33 ABYM36F and G 27 A

IFRM repetitive peak forward current Tamb = 65 C; see Figs 11; 12 and 13BYM36A to C 13 ABYM36D and E 11 ABYM36F and G 10 A

IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj maxprior to surge; VR = VRRMmax

65 A

ERSM non-repetitive peak reverseavalanche energy

L = 120 mH; Tj = Tj max prior to surge;inductive load switched off

10 mJ

Tstg storage temperature 65 +175 CTj junction temperature see Figs 17 and 18 65 +175 C

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITVF forward voltage IF = 3 A; Tj = Tj max;

see Figs 19; 20 and 21BYM36A to C 1.22 VBYM36D and E 1.28 VBYM36F and G 1.24 V

VF forward voltage IF = 3 A;see Figs 19; 20 and 21BYM36A to C 1.60 V

BYM36D and E 1.78 VBYM36F and G 1.57 V

V(BR)R reverse avalanche breakdownvoltage

IR = 0.1 mA

BYM36A 300 VBYM36B 500 VBYM36C 700 VBYM36D 900 VBYM36E 1100 VBYM36F 1300 VBYM36G 1500 V

IR reverse current VR = VRRMmax; see Fig.22 5 AVR = VRRMmax;Tj = 165 C; see Fig.22

150 A

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

1996 Sep 18 4



THERMAL CHARACTERISTICS

Note1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 m, see Fig.25.

For more information please refer to the General Part of associated Handbook.

trr reverse recovery time when switched fromIF = 0.5 A to IR = 1 A;measured at IR = 0.25 A;see Fig. 26

BYM36A to C 100 nsBYM36D and E 150 nsBYM36F and G 250 ns

Cd diode capacitance f = 1 MHz; VR = 0 V;see Figs 23 and 24BYM36A to C 85 pF

BYM36D and E 75 pFBYM36F and G 65 pF

maximum slope of reverse recoverycurrent

when switched fromIF = 1 A to VR 30 V anddIF/dt = 1 A/s;see Fig.27

BYM36A to C 7 A/sBYM36D and E 6 A/sBYM36F and G 5 A/s

SYMBOL PARAMETER CONDITIONS VALUE UNITRth j-tp thermal resistance from junction to tie-point lead length = 10 mm 25 K/WRth j-a thermal resistance from junction to ambient note 1 75 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

dIRdt--------

1996 Sep 18 5



GRAPHICAL DATA

BYM36A to Ca = 1.42; VR = VRRMmax; = 0.5.Switched mode application.

Fig.2 Maximum average forward current as afunction of tie-point temperature (includinglosses due to reverse leakage).

handbook, halfpage

0 2000

MSA884

100 T ( C)o

I F(AV)(A)

3

1

2

lead length (mm)20 15 10

tp

BYM36D and Ea = 1.42; VR = VRRMmax; = 0.5.Switched mode application.


handbook, halfpage

0 2000

MSA885

100

I F(AV)(A)

3

1

2

lead length (mm)20 15 10

T ( C)otp

BYM36F and Ga = 1.42; VR = VRRMmax; = 0.5.Switched mode application.


handbook, halfpage

0 200

4.0

0

0.8

3.2

MBD418

100

I F(AV)(A)

T ( C)otp

1.6

2.4

lead length 10 mm

BYM36A to Ca = 1.42; VR = VRRMmax; = 0.5.Device mounted as shown in Fig.25.Switched mode application.

Fig.5 Maximum average forward current as afunction of ambient temperature (includinglosses due to reverse leakage).

0 200

2.0

0

0.4

1.6

MLB492

100

I F(AV)(A)

T ( C)oamb

0.8

1.2

1996 Sep 18 6



BYM36D and Ea = 1.42; VR = VRRMmax; = 0.5.Device mounted as shown in Fig.25.Switched mode application.


0 200

2.0

0

0.4

1.6

MLB493

100

I F(AV)(A)

T ( C)oamb

0.8

1.2

BYM36F and Ga = 1.42; VR = VRRMmax; = 0.5.Device mounted as shown in Fig.25.Switched mode application.


0 200

2.0

0

0.4

1.6

MBD417

100

I F(AV)(A)

T ( C)oamb

0.8

1.2

Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

BYM36A to CTtp = 55C; Rth j-tp = 25 K/W.VRRMmax during 1 ; curves include derating for Tj max at VRRM = 600 V.

0

20

10 2 10 1 1 10 102 103 104

MSA89040

10

30

t (ms)p

I FRM(A)

= 0.05

0.1

0.2

0.5

1

1996 Sep 18 7



BYM36D and ETtp = 55C; Rth j-tp = 25 K/W.VRRMmax during 1 ; curves include derating for Tj max at VRRM = 1000 V.


0

20

10 2 10 1 1 10 102 103 104

MSA88940

10

30

t (ms)p

I FRM(A)

= 0.05

0.1

0.2

0.5

1

BYM36F and GTtp = 55C; Rth j-tp = 25 K/W.VRRMmax during 1 ; curves include derating for Tj max at VRRM = 1400 V.


30

0

10

10 2 1 10 10 2 10 3 10 4

MBD450

20

t (ms)p10 1

I FRM(A)

5

15

25 = 0.05

0.1

0.2

0.5

1

1996 Sep 18 8




BYM36A to CTamb = 65 C; Rth j-a = 75 K/W.VRRMmax during 1 ; curves include derating for Tj max at VRRM = 600 V.

0

8

10 2 10 1 1 10 102 103 104

MSA88716

4

12

t (ms)p

I FRM(A)

= 0.05

0.1

0.2

0.5

1


BYM36D and ETamb = 65 C; Rth j-a = 75 K/W.VRRMmax during 1 ; curves include derating for Tj max at VRRM = 1000 V.

010 2 10 1 1 10 102 103 104

MSA888

t (ms)p

I FRM(A)

12

4

8

2

6

10

1

= 0.05

0.1

0.2

0.5

1996 Sep 18 9




BYM36F and GTamb = 65 C; Rth j-a = 75 K/W.VRRMmax during 1 ; curves include derating for Tj max at VRRM = 1400 V.

12

0

4

10 2 1 10 10 2 10 3 10 4

MBD445

8

t (ms)p10 1

I FRM(A)

2

6

10= 0.05

0.1

0.2

0.5

1

Fig.14 Maximum steady state power dissipation(forward plus leakage current losses,excluding switching losses) as a function ofaverage forward current.

BYM36A to Ca = IF(RMS)/IF(AV); VR = VRRMmax; = 0.5.

5

0 1 30

MSA882

2

1

2

3

4

I F(AV) (A)

P(W)

a = 3

2.5 2

1.42

1.57

BYM36D and Ea = IF(RMS)/IF(AV); VR = VRRMmax; = 0.5.


handbook, halfpage5

0 1 30

MSA883

2

1

2

3

4

I F(AV) (A)

P(W)

a = 3

2.5 2

1.421.57

1996 Sep 18 10



BYM36F and Ga = IF(RMS)/IF(AV); VR = VRRMmax; = 0.5.


handbook, halfpage5

0 1 30

MLB560

2

1

2

3

4

I F(AV) (A)

P(W)

a = 3

2.5 2

1.42

1.57

Fig.17 Maximum permissible junction temperatureas a function of reverse voltage.

BYM36A to ESolid line = VR.Dotted line = VRRM; = 0.5.

handbook, halfpage200

0 400 12000

MSA873

800

100

V (V)R

A B C D E

Tj(C)

Fig.18 Maximum permissible junction temperatureas a function of reverse voltage.

BYM36F and GSolid line = VR.Dotted line = VRRM; = 0.5.

handbook, halfpage200

0 20000

MLB601

1000

100

V (V)R

T j( C)o

F G

Fig.19 Forward current as a function of forwardvoltage; maximum values.

BYM36A to CDotted line: Tj = 175 C.Solid line: Tj = 25 C.

handbook, halfpage

0

12

IF

8

(A)

4

01 2 VF (V)

3

MSA880

1996 Sep 18 11




BYM36D and E.Dotted line: Tj = 175 C.Solid line: Tj = 25 C.

handbook, halfpage

0

12

8

4

01 2 4

MSA881

3

IF(A)

VF (V)


BYM36F and G.Dotted line: Tj = 175 C.Solid line: Tj = 25 C.

handbook, halfpage

0

12

8

4

01 2 3

MBD425

IF(A)

VF (V)

Fig.22 Reverse current as a function of junctiontemperature; maximum values.

handbook, halfpageMGC550

0 100 200

103

102

10

1

(A)IR

Tj (C)

VR = VRRMmax.BYM36A to Ef = 1 MHz; Tj = 25 C.

Fig.23 Diode capacitance as a function of reversevoltage, typical values.

1

MSA886

10 102 1031

10 2

10

V (V)R

Cd(pF) BYM36A,B,C

BYM36D,E

1996 Sep 18 12



BYM36F and Gf = 1 MHz; Tj = 25 C.

Fig.24 Diode capacitance as a function of reversevoltage, typical values.

1

MBD438

10 102 10 41

10 2

10

V (V)R

Cd(pF)

10 3

Fig.25 Device mounted on a printed-circuit board.

Dimensions in mm.

handbook, halfpage

MGA200

3

2

7

50

25

50

handbook, full pagewidth

10

1 50

25 V

DUT

MAM057

+t rr

0.5

0

0.5

1

IF(A)

IR(A)

t0.25

Fig.26 Test circuit and reverse recovery time waveform and definition.

Input impedance oscilloscope: 1 M, 22 pF; tr < 7 ns.Source impedance: 50 ; tr 15 ns.

1996 Sep 18 13



Fig.27 Reverse recovery definitions.

andbook, halfpage

10%

100%

dIdt

t

trr

IF

IR MGC499

F

dIdt

R

1996 Sep 18 14



PACKAGE OUTLINE

DEFINITIONS

LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices, or systems where malfunction of theseproducts can reasonably be expected to result in personal injury. Philips customers using or selling these products foruse in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from suchimproper use or sale.

Data Sheet StatusObjective specification This data sheet contains target or goal specifications for product development.Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.Product specification This data sheet contains final product specifications.Limiting valuesLimiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one ormore of the limiting values may cause permanent damage to the device. These are stress ratings only and operationof the device at these or at any other conditions above those given in the Characteristics sections of the specificationis not implied. Exposure to limiting values for extended periods may affect device reliability.Application informationWhere application information is given, it is advisory and does not form part of the specification.

Fig.28 SOD64.

Dimensions in mm.The marking band indicates the cathode.

handbook, full pagewidth

MBC049

4.5max

k a

28 min28 min 5.0 max

1.35max

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BYM36E.pdf