Bt151 Series c 1

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Philips Semiconductors Product specification

Thyristors BT151 series C

GENERAL DESCRIPTION QUICK REFERENCE DATA

Passivated thyristors in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT

envelope, intended for use inapplications requiring high BT151- 500C 650C 800Cbidirectional blocking voltage VDRM, Repetitive peak off-state 500 650 800 Vcapability and high thermal cycling VRRM voltagesperformance. Typical applications IT(AV) Average on-state current 7.5 7.5 7.5 Ainclude motor control, industrial IT(RMS) RMS on-state current 12 12 12 Aand domestic lighting, heating and ITSM Non-repetitive peak on-state 100 100 100 Astatic switching. current

PINNING - TO220AB PIN CONFIGURATION SYMBOL

PIN DESCRIPTION

1 cathode

2 anode

3 gate

tab anode

LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 60134).

SYMBO PARAMETER CONDITIONS MIN. MAX. UNITL

-500C -650C -800CVDRM, Repetitive peak - 500

1 6501 800 VVRRM off-state voltages

IT(AV) Average on-state half sine wave; Tmb 109 C - 7.5 Acurrent

IT(RMS) RMS on-state current all conduction angles - 12 AITSM Non-repetitive peak half sine wave; Tj = 25 C

on-state current prior to surget = 10 ms - 100 At = 8.3 ms - 110 A

I2t I2t for fusing t = 10 ms - 50 A2sdIT/dt Repetitive rate of rise of I TM = 20 A; IG = 50 mA; - 50 A/ s

on-state current after dIG/dt = 50 mA/striggering

IGM Peak gate current - 2 AVGM Peak gate voltage - 5 VVRGM Peak reverse gate - 5 V

voltagePGM Peak gate power - 5 WPG(AV) Average gate power over any 20 ms period - 0.5 WTstg Storage temperature -40 150 CTj Operating junction - 125 C

temperature

a k

g1 2 3

tab

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor mayswitch to the on-state. The rate of rise of current should not exceed 15 A/s.

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THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Rth j-mb Thermal resistance - - 1.3 K/Wjunction to mounting base

Rth j-a Thermal resistance in free air - 60 - K/Wjunction to ambient

STATIC CHARACTERISTICSTj = 25 C unless otherwise stated


IGT Gate trigger current VD = 12 V; IT = 0.1 A - 2 15 mAIL Latching current VD = 12 V; IGT = 0.1 A - 10 40 mAIH Holding current VD = 12 V; IGT = 0.1 A - 7 20 mAVT On-state voltage IT = 23 A - 1.44 1.75 VVGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.6 1.5 V

VD = VDRM(max); IT = 0.1 A; Tj = 125 C 0.25 0.4 - VID, IR Off-state leakage current VD = VDRM(max); VR = VRRM(max); Tj = 125 C - 0.1 0.5 mA

DYNAMIC CHARACTERISTICSTj = 25 C unless otherwise stated


dVD/dt Critical rate of rise of V DM = 67% VDRM(max); Tj = 125 C;off-state voltage exponential waveform;

Gate open circuit 50 130 - V/ sRGK = 100 200 1000 - V/ s

tgt Gate controlled turn-on ITM = 40 A; VD = VDRM(max); IG = 0.1 A; - 2 - stime dIG/dt = 5 A/s

tq Circuit commutated VD = 67% VDRM(max); Tj = 125 C; - 70 - s

turn-off time ITM = 20 A; VR = 25 V; dITM/dt = 30 A/s;dVD/dt = 50 V/s; RGK = 100

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Fig.1. Maximum on-state dissipation, Ptot, versusaverage on-state current, IT(AV), where

a = form factor = IT(RMS)/ IT(AV).

Fig.2. Maximum permissible non-repetitive peakon-state current ITSM, versus pulse width tp, for

sinusoidal currents, tp 10ms.

Fig.3. Maximum permissible rms current IT(RMS) ,versus mounting base temperature Tmb.

Fig.4. Maximum permissible non-repetitive peakon-state current ITSM, versus number of cycles, for

sinusoidal currents, f = 50 Hz.

Fig.5. Maximum permissible repetitive rms on-statecurrent IT(RMS), versus surge duration, for sinusoidal

currents, f = 50 Hz; Tmb 109C.

Fig.6. Normalised gate trigger voltageVGT(Tj)/ VGT(25C), versus junction temperature Tj.

0 1 2 3 4 5 6 7 80

5

10

15

a = 1.571.9

2.2

2.8

4

IT(AV) / A

Ptot / W Tmb(max) / C

125

118.5

112

105.5conductionangle

formfactor

degrees30

60

90

120

180

4

2.8

2.2

1.9

1.57

a

1 10 100 10000

20

40

60

80

100

120

Number of half cycles at 50Hz

ITSM / A

TITSM

time

I

Tj initial = 25 C max

T

10

100

1000

10us 100us 1ms 10ms

T / s

ITSM / A

TITSM

time

I

Tj initial = 25 C max

T

dI /dt limitT

0.01 0.1 1 100

5

10

15

20

25

surge duration / s

IT(RMS) / A

-50 0 50 100 1500

5

10

15BT151

Tmb / C

IT(RMS) / A

109 C

-50 0 50 100 1500.4

0.6

0.8

1

1.2

1.4

1.6

Tj / C

VGT(Tj)VGT(25 C)

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Fig.7. Normalised gate trigger currentIGT(Tj)/ IGT(25C), versus junction temperature Tj.

Fig.8. Normalised latching current IL(Tj)/ IL(25C),versus junction temperature Tj.

Fig.9. Normalised holding current IH(Tj)/ IH(25C),versus junction temperature Tj.

Fig.10. Typical and maximum on-state characteristic.

Fig.11. Transient thermal impedance Zth j-mb, versuspulse width tp.

Fig.12. Typical, critical rate of rise of off-state voltage,dVD/dt versus junction temperature Tj.

-50 0 50 100 1500

0.5

1

1.5

2

2.5

3

Tj / C

IGT(Tj)IGT(25 C)

0 0.5 1 1.5 20

10

20

30

VT (V)

IT

typ

max

(A)

Vo = 1.06 V

Rs = 0.0304 ohms

Tj = 125 C

T

j

= 25 C

-50 0 50 100 1500

0.5

1

1.5

2

2.5

3BT145

Tj / C

IL(Tj)IL(25 C)

0.001

0.01

0.1

1

10

tp / s

Zth j-mb (K/W)

10us 0.1ms 1ms 10ms 0.1s 1s 10s

tpP

t

D

-50 0 50 100 1500

0.5

1

1.5

2

2.5

3

Tj / C

IH(Tj)IH(25 C)

0 50 100 15010

100

1000

10000

Tj / C

dVD/dt (V/us)

gate open circuit

RGK = 100 Ohms

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MECHANICAL DATA

Dimensions in mm

Net Mass: 2 g

Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base.

Notes1. Refer to mounting instructions for SOT78 (TO220) envelopes.2. Epoxy meets UL94 V0 at 1/8".

10,3

max

3,7

2,8

3,03,0 max

not tinned

1,3

max

(2x)

1 2 3

2,4

0,6

4,5max

5,9min

15,8max

1,3

2,54 2,54

0,9 max (3x)

13,5min

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DEFINITIONS

DATA SHEET STATUS

DATA SHEET PRODUCT DEFINITIONSSTATUS2 STATUS3

Objective data Development This data sheet contains data from the objective specification forproduct development. Philips Semiconductors reserves the right tochange the specification in any manner without notice

Preliminary data Qualification This data sheet contains data from the preliminary specification.Supplementary data will be published at a later date. PhilipsSemiconductors reserves the right to change the specification withoutnotice, in order to improve the design and supply the best possibleproduct

Product data Production This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time inorder to improve the design, manufacturing and supply. Changes willbe communicated according to the Customer Product/ProcessChange Notification (CPCN) procedure SNW-SQ-650A

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above oneor more of the limiting values may cause permanent damage to the device. These are stress ratings only andoperation of the device at these or at any other conditions above those given in the Characteristics sections ofthis specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Electronics N.V. 2004

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of thecopyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to beaccurate and reliable and may be changed without notice. No liability will be accepted by the publisher for anyconsequence of its use. Publication thereof does not convey nor imply any license under patent or otherindustrial or intellectual property rights.

LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of theseproducts can be reasonably expected to result in personal injury. Philips customers using or selling these productsfor use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resultingfrom such improper use or sale.

2 Please consult the most recently issued datasheet before initiating or completing a design.

3 The product status of the device(s) described in this datasheet may have changed since this datasheet waspublished. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

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Bt151 Series c 1