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BJT Band diagram
Analysisتجزيه وتحليل دياگرام
باند انرژي
W
PN
The “typical” electron travels into the p-type region a distancegiven by DL
D is the diffusion coefficient (technically, the minority carrier diffusion coefficient)t is the lifetimetime (technically, the minority carrier lifetime)
W
The diffusion length L can easily by ~100 x times larger than the depletion width W
Diffusion (injection)
Recombination(excess e- combinewith holes)
How far does an electron go into the p-type region before it finds a “hole” to recombine with?
Transistors (Transfer Resistor)
Transistors
Junction-FETs (JFETS)
Field Effect TransistorsBipolar transistors
Insulated Gate FET’s
MOSFETs
NPN,PNP
N-channel, P-channel
Enhancement, DepletionN-channel, P-channel
The bipolar junction transistor (BJT)
NP
P
B
C
E
C
B
E
PN
N
B
C
E
B
C
E
B
C
E
C
B
ENPN
PNP
Arrow always points away from base and toward emitterMy pneumonic: No Point iN
Arrow always points away from emitter towards baseMy pneumonic: Points IN
Diffusion
Drift
Diffusion
Drift
At equilibrium:
BaseCollector Emitter
CB
E
+
-
+
-
PN N
+
-+
-} }
This junction isreverse-biased
This junction isforward-biased
BC E
“Quasi”-Fermi level
Since we are not at thermodynamic equilibrium, we cannotdefine a single chemical potential (Fermi level) is everywhere
A Quasi – fermi-level can be used to describe the local equilibrium ofelectrons and holes
In Use: Forward bias one p-n junction, and reverse-bias the other
PN N
+
-
+ -
BC E--
++
W (Width of depletion region)
LDiffusion
Physical thickness of base
There are three important length scales that are relevant to understandinghow a transistor operates:
DiffusionDrift
PN N
+
-
+
-
} }
This junction isreverse-biased
This junction isforward-biased
BC E
Basis of bipolar transistor operation: 1) The Base-emitter junction is forward-biased: Electrons flow from the emitter
to the base, just like in a normal forward-biased diode
2) Because the base is very thin, electrons continue to move through the baseand find themselves at the collector-base junction. Once they ‘feel’ the large electricfield at this junction, they are pushed downhill to the collector. Only a very smallfraction (typically ~ 1% - 3%) of the electrons come out through the base; theremaining 97%-99% come out through the collector.
When base is made very thin, IC>>IB--
++
VC
VB
VEIBIB
IE
VBEVCB
PN N
+
-
+ -
BC E
VC
IB
VE
IE
IB
When base is made very thin, IC>>IBand IC~IE
Bipolar transistor can be considered a current amplifier: If one can control thebase current, then this will induce a much larger change in the current in the collector and in the emitter.
a=IC/IE 1-a=IB/IE
B
C
I
I
1is the current gain of a transistor. b is commonly ~30-100
--
++
VC
VB
VEIBIB
IE
VBEVCB
If VCB constant, then as VBE is increased, current IC and IB increase exponentially
VBE
IC~IE
B
+-
+
-DVB
Small wiggle in VB, DVB, induces large change in IC. By Ohm’s Law, the voltage across RC shows a big change. So,Small DVB Big DVRE
Bipolar transistor as a voltage amplifier = Transistor + resistor(s)
VRE
Collector resistor
Field-effect Transistors
Main differences from bipolar transistors:
1) Use an electric field, established by applying a voltage to a “gate” electrode, to control current flow (voltage in Voltage out)
2) Ideally, no current flow at all into the “gate” electrode. Important: No current implies no power dissipation, at least under
certain conditions Two fundamentally different types:
1) Junction FET (J-FET)
2) IGFET (insulated-gate FET)
The MOSFET (Metal-oxide-semiconductor FET) is the most common type
Relies on a reverse-biased PN junction to prevent current flow in the gate
n
p
p
Depletion region
Depletion region
e- e- e- e- e-
+-
Source (S) Drain (D)
Gate (G)
Gate (G)
Gate forms a diode (p-n) junction with source and drain
JFET is always operated under conditions where this diode junctionis reverse-biased, so that only very little current flows from the gateto the source or the drain
N-channel JFET
Depletion region is larger on the right-hand side because thegreen region is more positive on the right than on the left (due to VSD),so the Gate-Drain junction is reverse-biased more strongly than thegate-source junction is.
np
pDepletion region
Depletion region
e- e- e- e-
+-
S D
G
G
+
VSD
VGS
connection so both gate electrodes have the same voltage-
np
pe- e- e- e-
+-
S D
G
G
+
VSD
VGS
-
“Pinch-off”Larger (more negative) VGS
Small, negative VGS
n-channel
SYMBOL:
V”pinch-off”
IDS
V”pinch-off”
Larger (more positive) VDS
VDS
IDS
Purely resistive here (silicon actslike a resistor)
Current goes up less quicklyas depetion region narrows
Once pinch-off occurs, nofurther increase i n current
pinch-off
VDS
IDS
pinch-off
VGS~0
VGS~ -1.0 V
VGS~ -2.0 V
VGSn-channel
SYMBOL:
Everywhere switch N, PSwitch signs of all voltage sources and currents
p
n
n
Depletion region
Depletion region
+ -
Source (S) Drain (D)
Gate (G)
Gate (G)
h+ h+ h+ h+ h+
pn
nh+
+-
S D
G
G
+
VSD
VGS
- “Pinch-off”
VDS
-IDS
pinch-off
VGS~0
VGS~ +1.0 V
VGS~ +2.0 V
IGFET (Insulated-gate FET)
InsulatorMetal (G)
SiO2
Metal
S D
Semiconductor
CB
VB
Gate (G)
Body
p-Silicon
S D
n-Si n-Si
4 terminals: Source, Drain, Gate, and “Body” (sometimes called “Substrate”)
SiO2
Metal
Gate (G)
Body
p-Silicon
S D
n-Si n-Si
diode-like junctionhere (and similarly at drain)
For VG<0, the p-type silicon is in depletion or possibly accumulation. It formsresistive p-n junctions with the source and drain.
For VG>0, the p-type silicon goes into depletion.
When VG is large and positive, enough electrons are attracted to the near-surfaceregion that the region right under the SiO2 becomes inverted, and electrons canfrom from the source to the drain.
SiO2
Metal
Gate (G)
Body
p-Silicon
S D
n-Si n-Si
Inverted region
With VG=0 With VG>0
CB
VB
CB
VB
Depletion
CB
VB
Inversion
CB
Accumulation
VB
Small negative gate(for n-type sample)Surface becomes resistive, but electronsstill majority carrier
Large negative gate(for n-type sample)Surface becomesp-type, as holes become majority carrierat surface
positive gate(for n-type sample)Surface remains n-type, but becomes more conductive
“flat-band” condition
As a function of gate voltage, three different characteristic behaviors:
CB
VBe-
CB
VB
If metal has smaller work function, then when connected by a wire,Electrons move from metal to semiconductor, making semiconductor Negaitve and metal positive until their Fermi levels line up
CB
VB
CB
VB
Depletion
CB
VB
Inversion
CB
Accumulation
VB
Small positive gate(for p-type sample)Surface becomes resistive, but holesstill majority carrier
Large positive gate (for p-type sample) surface becomes n-type, as electrons become majority carrier at surface
negative gate(for p-type sample)Surface remains p-type, but becomes more conductive
“flat-band” condition
As a function of gate voltage, three different characteristic behaviors:
CB
VB
SiO2
Metal
Gate (G)
Body
p-Silicon
S D
n-Si n-Si
diode-like junctionhere (and similarly at drain)
Body is always held at potential of drain or possibly biased more negatively(to reverse bias the S and D junctions to the p-type Body)
Applying a voltage to the gate controls whether the near-surface regionis in accumulation, depletion, or inversion
SiO2
Metal
Gate (G)
Body
p-Silicon
S D
n-Si n-Si
diode-like junctionhere (and similarly at drain)
For VG<0, the p-type silicon is in depletion or possibly accumulation. It formsresistive p-n junctions with the source and drain.
For VG>0, the p-type silicon goes into depletion.
When VG is large and positive, enough electrons are attracted to the near-surfaceregion that the region right under the SiO2 becomes inverted, and electrons canfrom from the source to the drain.
SiO2
Metal
Gate (G)
Body
p-Silicon
S D
n-Si n-Si
Inverted region
With VG=0 With VG>0