Upload
gloria-melton
View
216
Download
0
Tags:
Embed Size (px)
Citation preview
Background on Gigabit Ethernet
ECE 4006 C
G3: Karen Cano, Scott Henderson, Di Qian
Dec, 5 2002
Ethernet History (Timeline)
• 1973 – (2.94Mbps) First developed at Xerox’s Palo Alto Lab (Robert Metcalfe and David Boggs)
• 1979 - (10Mbps) Improvement by DEC, Intel and Xerox. The DIX standard. Thick Ethernet System
• 1983 - Formally standardized as IEEE 802.3
Timeline (con’t)
• 1983–1989 – Improvements on bus topology and transmission distance.
• 1990 – version IEEE 802.3i, 10Base-T technology.
• 1995 - (100Mbps) version IEEE 802.3u, also call “Fast Ethernet”.
Timeline (con’t)
• 1998 – (1 Gbps) version IEEE 802.3z, fiber optics; and IEEE 802.3ab, twisted pair. Also know as “Gigabit Ethernet”.
• Present – (10 Gbps) standard completed in 2002.
Project Tasks
• 1. Research on the transmitting and receiving modules.
• 2. Examine the testing board • 3. Search for the components• 4. Testing the evaluation board with
purchased components• 5. Connecting the purchased components
with parts from other groups.
Project Goal
• Duplicate the data transmitting and receiving module functionality of the Gigabit Ethernet technology with purchased components that provide optimum performance at a minimum price.
Possible Solutions• Transmitting module (laser source)
– VCSEL
• Receiving module (Photo-detector) – PIN photodiode
• Other Specs: - SC connectorized (optical)- SMA connectorized (electrical)- 850nm
- Multimode (fiber) - relatively low cost
Laser Basics• What is a Laser?
– Light Amplification by Stimulated Emission of Radiation
• How? 1) Electrons in low-energy levels bumped into high levels by injection of energy
2) When an electron drops to a lower energy level, excess energy is given off as light.
VCSELs
• Vertical Cavity Surface Emitting Lasers
• Physical makeup– Bragg mirrors– Active region
• Fabrication techniques– Molecular beam epitaxy– Vapor phase epitaxy
VCSELs
• In EELs no pre-cleaving tests can be performed, testing VCSELs is much cheaper
• Less current required for VCSELs
• Output beam easier couple into fiber and much less divergent than EELs
• Smaller and faster than EELs
VCSELs vs. EELs
• Edge Emitting Lasers - give out their light from the sides or edges, therefore no pre-cleaving tests can be performed
• Since VCSELs emit light from the top and bottom, they do not have this problem. Testing them is much cheaper
Interesting Facts
• In a typical VCSEL, as many as 60 individual semiconductor layers are stacked within a structure 10 microns thick.
• 20,000 individual laser die can be fabricated on a single 3 inch wafer.
Multimode
• Multimode- light is injected into the core and can travel many paths through the cable (i.e. rattling in a tube).
• Each path is slightly different in length, so the time variance this causes, spreads pulses of data out and limits the bandwidth.
Singlemode
• Fiber has such a narrow core that light takes one path only through the glass.
• Not limited to modal-bandwidth.
• Very small amount of pulse-spreading is consequential only in Gigabit speed applications.
Photodetectors
• Necessary for light pulse detection
• Wide variety of of types – Photoconductors– Avalanche photodiodes– PIN photodiodes– MSM photodiodes
Photoconductors
• Operation based on varying conduction
• Many important factors affecting bandwidth– Transit time– Surface area of photon acceptor region– Noise ratio (Johnson noise)– Quantum efficiency
Avalanche Photodiodes
• Exemplify the “gain-bandwidth” tradeoff
• Use the p-n junction model to operate
• Take advantage of the avalanche effect– Carrier multiplication– Associated gain– Time constant associated with avalanche– Bandwidth penalty
PIN Photodiode
• PIN– Reason for name– Doped region, undoped region, doped region– Unity gain– Functions under reverse bias
• Most important parameter for operation– Transit time
Bandwidth vs. Depletion Width
• Transit time– Time for subatomic
particle to get from one electrode to the other
• Based on quickest, typically electron– e- mobility > h+ mobility
• Capacitance limited
Transit Time (continued)
• Dependence on intrinsic region length
• Minimizing this region
• High bandwidth applications
MSM Photodiode
• Metal-Semiconductor-Metal– Associated work functions– Atomic level metal-semiconductor marriage
• High speed (up to 100GHz)
• Majority carrier devices
• Not developed for Gigabit Ethernet on scale as large as PIN
Concluding, thus far…..
• Obvious choices for devices:– VCSEL@850nm
– PIN photodiode w/ acceptable bandwidth
– Multimode fiber
– SC optical connectors
– SMA electrical connectors
• Gigabit Ethernet is a popular application• If you are buying less than five-million devices
then be prepared to stand at the end of the line.