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 SLIDE 1-Opening slide Good evening ladies and gentlemen, my name is arviza from UI and I would like to present you about design of GaN bas ed S-Bend Y - Bran! power splitter wit! ""I struture# SLIDE 2-presentation outline $ere is t!e outline, first , I want to talk about GaN "aterial, Seond, t!e B%" t!eory w!i! is used in &ptiB%", t!en about proess to design power splitter and t!e last is about t!e result of t!e simulations in t!is work# SLIDE 3-Introduction to GaN 'eently GaN !as attrated many resear!er beause of its superior properties, su! as( wide band gap w!i! means only few absorptions in I' region, !as temperature stability in e)treme ondition w!i! is re*uirement for !ig! power devie, t!e most enviromental friendly omparing to III-+ ompounds# s far as we know, many resear! work using GaN material, su! as( ., /., et# But only a few resear!er w!o resear! about waveguide based devie using GaN, t!erefore, t!is situation motivate us to design GaN based power splitter# 0!e funtion of %ower splitter is to split lig!t into several bran!es and an be used in teleommuniation devie to bring information from one system to anot!er system# In t!is work, to simulate t!e design we use &ptiB%" 12 SLIDE 4-BPM !eor" 0o simulate t!e design, &%tiB%" use 330B%" to alulate propagation of lig!t in 4., as you an see !ere, t!ese are 4 e*uation of 330B%" SLIDE #-design de$ine %aterial 3irst step in designing power splitter is defining t!e material, In t!is work, we use parameter GaN on sapp!ire from previous resear! w!o !as already done  by 0U .armstadt, 0!is is t!e omposition, it onsist of sapp!ire, lN low temp and $ig! 0emp, lN5GaN, GaN# 0!ere is several layer t!at we alled Buffer layer Between top GaN layer and Sapp!ire, it is used to redue mismat! lattie  between GaN and Sapp!ire SLIDE &-design si'e o$ (a$er

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SLIDE 1-Opening slideGood evening ladies and gentlemen, my name is arviza from UI and I would like to present you about design of GaN based S-Bend Y-Branch power splitter with MMI structure.

SLIDE 2-presentation outlineHere is the outline, first , I want to talk about GaN Material, Second, the BPM theory which is used in OptiBPM, then about process to design power splitter and the last is about the result of the simulations in this work.SLIDE 3-Introduction to GaNRecently GaN has attracted many researcher because of its superior properties, such as: wide band gap which means only few absorptions in IR region, has temperature stability in extreme condition which is requirement for high power device, the most enviromental friendly comparing to III-V compounds.As far as we know, many research work using GaN material, such as: LD, LED, etc. But only a few researcher who research about waveguide based device using GaN, therefore, this situation motivate us to design GaN based power splitter. The function of Power splitter is to split light into several branches and can be used in telecommunication device to bring information from one system to another system. In this work, to simulate the design we use OptiBPM 12SLIDE 4-BPM TheoryTo simulate the design, OPtiBPM use FFTBPM to calculate propagation of light in 3D, as you can see here, these are 3 equation of FFTBPMSLIDE 5-design define materialFirst step in designing power splitter is defining the material, In this work, we use parameter GaN on sapphire from previous research who has already done by TU Darmstadt, This is the composition, it consist of sapphire, AlN low temp and High Temp, AlN/GaN, GaN. There is several layer that we called Buffer layer Between top GaN layer and Sapphire, it is used to reduce mismatch lattice between GaN and Sapphire

SLIDE 6-design size of waferThe next step is defining size of wafer, the length of the wafer is 1000 um and the width is 70 umSLIDE 7 dan 8- width and thicknessTo obtain the optimum size of the waveguide, we did many simulations, it is shown that the optimum size of Waveguide is 4 um length and 4 um width.SLIDE 9-type of wvThere are many type of waveguides but in this work, we only use linear wv, rectangular waveguide as MMI and S-Bend waveguide, MMI waveguide is used as transition to split mode from single mode into two separating mode. S-Bend is used because it is low loss and has S shaped structure which can make shorter device comparing to Y linear junction, therefore the fabrication is easier.

SLIDE 10-MMI designThe next step is we combine the linear waveguide with the rectangular waveguide, the width of MMI is 8 um to split two separating waveguide and we did simulation to obtain the optimum length of waveguide and the result is 25 um.

SLIDE 11 s-bend designNext step, we combine S-bend with previous simulation, we use s-bend cosine and did many simulation to obtain the optimum radius of the s-bend, the optimum radius is 25 um, SLIDE 12-final designThis is the final design in this work, SLIDE 13-relative powerAs you can see here, this is the power relative output, starting from 0 um to 600 um in z-axis direction, the power is maximum 100 %, start from 600 um to 1000 um, the power decrease almost linearly to 94,5 %, this means that the losses only occured in the S-Bend waveguide, we believe this happen because at bending waveguide, the light field is pressed slightly to the outer core cladding interface and deformed from its original profile, however it can be reduced by adding offset. SLIDE 14-optical power distribution Here is the optical power distribution of our power splitter, the red color indicates 100 % of power and the yellow color shown on s-bend waveguide, the shape of mode in the input, MMI and output are shown around the picture, the form is uniform and in the MMI structure the mode is widen.

SLIDE 15-CONCLUSIONFrom the simulation, it can be concluded that the size of straight waveguide is 4 um for both length and width, the size of MMI 25 um for its length and 8 um for its width and the optimum radius of S-bend is 10,5 um, thats all, thank you