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EE201 Semiconductor DeviceEE201 Semiconductor Device 11
TOPIC 2
~DIODES~
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Doa mula kelasDoa mula kelas
Ya Tuhan, lapangkanlah dadaku, mudahkanlahYa Tuhan, lapangkanlah dadaku, mudahkanlah
segala urusanku, dan lepaskanlah kekakuan lidahku,segala urusanku, dan lepaskanlah kekakuan lidahku,
agar mereka mengerti perkataanku.agar mereka mengerti perkataanku.(Thaha: 27)(Thaha: 27)
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By the end of this class, studentsBy the end of this class, students
should be able to:should be able to:~~ Understand the characteristics of diode and diode as a semiconductorUnderstand the characteristics of diode and diode as a semiconductor
device.device.
~~ Determine !" characteristic curve for silicon diode and e#$lain:Determine !" characteristic curve for silicon diode and e#$lain:
a. %nee "olta&e (Threshold volta&e )a. %nee "olta&e (Threshold volta&e )
b. 'orard current (in milli m$ere scale)b. 'orard current (in milli m$ere scale)
c. *everse current (in microm$ere scale)c. *everse current (in microm$ere scale)
d. Brea+don volta&ed. Brea+don volta&e
e. Burnin& level (hen d, "d e#ceeds ma#)e. Burnin& level (hen d, "d e#ceeds ma#)
~~ %no diode a$$lications as rectifiers.%no diode a$$lications as rectifiers.
~~ Diode as cli$$er and clam$er circuits.Diode as cli$$er and clam$er circuits.
~~ Understand other ty$es of diode:Understand other ty$es of diode:
a. -ener diodea. -ener diode
b. i&ht emittin& diode (/D)b. i&ht emittin& diode (/D)
c. hotodiodec. hotodiode
d. aser dioded. aser diode
EE201-semiconductor deviceEE201-semiconductor device 33
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DiodesDiodes
~~ n effect, diodes act li+e a fla$$er valven effect, diodes act li+e a fla$$er valve ote: this is the sim$lest $ossible model ofote: this is the sim$lest $ossible model of
a diodea diode
EE201 Semiconductor DeviceEE201 Semiconductor Device 55
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DiodesDiodes
~ 'or the fla$$er valve, a small $ositive~ 'or the fla$$er valve, a small $ositive$ressure is reuired to o$en.$ressure is reuired to o$en.
~ i+eise, for a diode, a small $ositive~ i+eise, for a diode, a small $ositive
volta&e is reuired to turn it on. Thisvolta&e is reuired to turn it on. This
volta&e is li+e the volta&e reuired tovolta&e is li+e the volta&e reuired to
$oer some electrical device. t is used u$$oer some electrical device. t is used u$
turnin& the device on so the volta&es atturnin& the device on so the volta&es at
the to ends of the diode ill differ.the to ends of the diode ill differ. The volta&e reuired to turn on a diode isThe volta&e reuired to turn on a diode is
ty$ically around 8.9!8. volt for a standardty$ically around 8.9!8. volt for a standard
silicon diode and a fe volts for a li&ht emittin&silicon diode and a fe volts for a li&ht emittin&
diode (/D)diode (/D)EE201 Semiconductor DeviceEE201 Semiconductor Device 66
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t the ;unction, free electrons from the !ty$e
material fill holes from the !ty$e material. This
creates an insulatin& layer in the middle of the
diode called the de$letion
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EE201 Semiconductor DeviceEE201 Semiconductor Device 88
DIODE-FORWARD BIAS
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EE201 Semiconductor DeviceEE201 Semiconductor Device99
DIODE-REVERSE BIAS
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Diode !" 5haracteristicDiode !" 5haracteristic~ 'or ideal diode, current flos only one ay~ 'or ideal diode, current flos only one ay
~ *eal diode is close to ideal~ *eal diode is close to ideal
EE201 Semiconductor DeviceEE201 Semiconductor Device 1010
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Diode !" 5haracteristicDiode !" 5haracteristic
EE201 Semiconductor DeviceEE201 Semiconductor Device 1111
'orard current'orard current == current flo hen forard bias volta&e arecurrent flo hen forard bias volta&e are&iven. (in milim$ere scale)&iven. (in milim$ere scale)
*everse current*everse current ==small lea+a&e current, flo hen reverse biassmall lea+a&e current, flo hen reverse bias
volta&e (in microm$ere scale (volta&e (in microm$ere scale (>>))))
%nee "olta&e%nee "olta&e == threshold volta&e.(0i!8.7", ?e! 8.@"). "oltaðreshold volta&e.(0i!8.7", ?e! 8.@"). "olta&e
that current flo immediately.that current flo immediately.Brea+don volta&eBrea+don volta&e == volta&e that reverse current flo immediately.volta&e that reverse current flo immediately.
ea+a&e 5urrentea+a&e 5urrent == Ahen a diode is reverse biased, a very smallAhen a diode is reverse biased, a very small
amount of current can and does &o in reverseamount of current can and does &o in reverse directiondirection
(i.e.o$$osite to conventional direction)(i.e.o$$osite to conventional direction) &ivin& rise to lea+a&e&ivin& rise to lea+a&e
current.current.Burnin& evelBurnin& evel !! Ahen Ahen dd and "and "dd e#ceed ma#imum, thee#ceed ma#imum, the
com$onents ill burn.com$onents ill burn.
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deal Diodedeal Diode 'orard bias'orard bias= diode as a close sitch (3)= diode as a close sitch (3)
because no resistance and volta&e dro$.because no resistance and volta&e dro$.
*everse bias*everse bias== diode as o$en sitch (3''), infinitydiode as o$en sitch (3''), infinity
resistance.resistance.
EE201 Semiconductor DeviceEE201 Semiconductor Device 1212
*everse bias
3$en sitch (3'')
5athodenode
'orard bias
5lose sitch (3)
5athodenode
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1313
DIODE APPLICATIONSDIODE APPLICATIONS
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2-1 Half-Wave Rectiers
DIODEDIODE ability to conduct current in one direction andability to conduct current in one direction andbloc+ current in other direction bloc+ current in other direction
used in circuit calledused in circuit called */5T'/* (ac dc)
rectifierrectifieris an electrical device thatis an electrical device that
converts alternatin& current (5), hichconverts alternatin& current (5), hich
$eriodically reverses direction, to direct current$eriodically reverses direction, to direct current
(D5), hich is in only one direction, a $rocess(D5), hich is in only one direction, a $rocess+non as+non as rectification.rectification.
11
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The basic function of a DC power supply isto convert an AC voltage to a constant DCvoltage (AC DC)
Either half or full-wave
rectier convert ac inputto a pulsating dc voltage.
Eliminates the uctuations- produce smooth dc voltage
Maintains a constavoltage
The basic DC power supply
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~~ The a$$lied a.c si&nal across the secondary indin& chan&eThe a$$lied a.c si&nal across the secondary indin& chan&e
$olarities after each half !cycle of su$$ly a.c volta&e.$olarities after each half !cycle of su$$ly a.c volta&e.
~~ t the time of the $ositive half!cycle of su$$ly a.c volta&e,t the time of the $ositive half!cycle of su$$ly a.c volta&e,
diode is in forard biased and it conduct current in the circuits.diode is in forard biased and it conduct current in the circuits.
~~ t the time of ne&ative half!cycle of in$ut a.c volta&e, diodet the time of ne&ative half!cycle of in$ut a.c volta&e, diodebecomes reverse biased and it does not conduct current in thebecomes reverse biased and it does not conduct current in the
circuits.circuits.
~~ n this ay, current flos via the load at the time of $ositiven this ay, current flos via the load at the time of $ositive
half!cycle of in$ut a.c volta&e only here as no conduct currenthalf!cycle of in$ut a.c volta&e only here as no conduct current
throu&h the load at the time of ne&ative half!cycle in the samethrou&h the load at the time of ne&ative half!cycle in the samedirection is obtain across load for other ne#t cycle.direction is obtain across load for other ne#t cycle.
~~ But this out$ut is $ulsatin& d.c .But this out$ut is $ulsatin& d.c .
EE201 Semiconductor DeviceEE201 Semiconductor Device 1616
Half-Wave Rectier
Operation
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1!1!
A half wave
rectier(ideal) allowsconduction for only180 or half of aco!plete cycle""
During rst one cycle#
Vingoes positive $diode FB$ conductcurrent
Vin goes negative $diode RB $ no
current% 0& The output fre'uencyis the sa!e as the input(sa!e shape)"
The averaevalue !DC or
!A!"#
deal diode
!odel
p
AVG
VV =
$$ %easure on &c volt'eter
The Half-Wave Rectier
ac source load resistor
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ractical Diode barrier potential of 0"*& (+i) ta,en into account"
During -ve half%cycle &in!ust overco!e &potentialfor forward bias"
Example 1: Calculate the peak o/p voltage, VExample 1: Calculate the peak o/p voltage, Vp(oup(out!t!
The pea, o.p voltage# VVV inpoutp 7.0)()( =
1"1"
()ect of the *arrier +otential onthe Half-Wave Rectier Output
V
VV
VVV inpoutp
30.4
7.05
7.0)()(
=
=
=
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1#1#
Example ":
+,etch the output V0 and deter!ine the output level v
networ, in above gure"
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2020
ea,inversevoltage(&) is themaximumvoltageacross thediodewhen it isin reverse
bias.
The diode !ustbe capable of
withstandingthis a!ount ofvoltage"
)(inpVPIV=
+ea, nverse !oltae .+!/
Half Wave Rectier with
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2121
Transfor!ers are often used for voltagechange and isolation" The turns ratio, nof the pri!ary to secondary
deter!ines the output versus the input.
The advantages of transfor!er coupling# 1) allows the source voltage to be stepped
up or down /) the ac source is electrically isolated fro!the rectier thus
prevents shoc, haards in thesecondary circuit"to couple ac input
to the rectier
VVV poutp 7.0(sec))( =
(sec)pVPIV=priN
Nn sec=
prinVV =sec
Half-Wave Rectier withTransfor'er-Couple& nput
!oltae
If n1! "sec is #re$ter t%$n "&ri.
If n'1! "sec is ess t%$n "&ri.
If n1! "sec "&ri.
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Example #:
2222
Deter!ine the pea, value of output voltage asshown in 2igure below"
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2323
Twice oup
AVG
V
V
2
=
A full-wave rectier allows current to ow duringboth the positive and negative half ccles or thefull !"0#whereas half-wave rectier allows onlduring one-half of the ccle.
$he no. of %ve alternations is twice the half
wave for the sa&e ti&e interval. $he output fre'uenc is twice the input
fre'uenc.
$he average value ( the value &easured on a
)* volt&eter.
63.7% of Vp
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~~ t the time of $ositive half!cycle of secondary indin& volta&e,t the time of $ositive half!cycle of secondary indin& volta&e,
the u$$er end of secondary indin& becomes $ositive.the u$$er end of secondary indin& becomes $ositive.
~~ Under this condition, u$$er diode is in forard biased hereasUnder this condition, u$$er diode is in forard biased hereas
loer diode is in reverse biased.loer diode is in reverse biased.
~~ 6ence u$$er diode conduct $ositive half!cycle of the in$ut of6ence u$$er diode conduct $ositive half!cycle of the in$ut of
the a.c volta&e here as loer diode does not conducts.the a.c volta&e here as loer diode does not conducts.
~~ t the time of ne&ative half!cycle of secondary indin&, u$$ert the time of ne&ative half!cycle of secondary indin&, u$$er
end of secondary indin& become ne&ative.end of secondary indin& become ne&ative.
~~ Under this condition, loer diode is in forard biased here asUnder this condition, loer diode is in forard biased here as
u$$er diode is in reverse biased.u$$er diode is in reverse biased.
~~ 6ence the loer diode conduct current via load of the ne&ative6ence the loer diode conduct current via load of the ne&ative
half!cycle of in$ut a.c volta&e and u$$er diode does nothalf!cycle of in$ut a.c volta&e and u$$er diode does notconducts current.conducts current.
~~ The current in the load is in same direction for both half!cycle ofThe current in the load is in same direction for both half!cycle of
in$ut a.c volta&e. n this ay d.c out$ut is obtain across thein$ut a.c volta&e. n this ay d.c out$ut is obtain across the
load.load.
EE201 Semiconductor DeviceEE201 Semiconductor Device 2424
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2$2$
Coupled inputolt!"e
$his ðod of rectication e&plos twodiodesconnected to a secondar center-tapped transfor&er.
$he i+p voltage is coupled through thetransfor&er to the center-tapped secondar.
The Center-Tapped Full-ave!ectier
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2%2%
%ve half-ccle input voltage forward-bias ) reverse-bias )/-the current patch through the) and R1
-ve half-ccle input voltage reverse-bias ) forward-bias )/-the current patch through )/
and R1 $he output current on both portions of the input
ccle ( sa&e direction through the load.
$he o+p voltage across the load resistors ( full-
wave rectiers
The Center-Tapped Full-ave!ectier
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- ()ect of the Turns Ratio on the Output !oltae -- ()ect of the Turns Ratio on the Output !oltae -
priVV 2
sec =
7.0)()( = pripoutp VV
2!2!
&' n(1, )p*out+()p*pri+- 0.7V 2
)p*sec+()p*pri+
&' n(2,
priVV 2sec =
2n an case, the o+p voltage is alwasone-half of the total secondar voltage&inus the diode drop barrier potential,no &atter what the turns ratio.
V
V
Vout 7.02sec
=
The Center-Tapped Full-ave!ectier
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-"ea# $nverse %oltage &"$%'-
3a4i&u& anode3a4i&u& anode
voltage5voltage5 2
(sec)
1
pVD +=
2
(sec)
2
pVD =
)5 forward-bias ( its cathode is at the sa&e voltageof its anode &inus diode drop6 $his is also the
voltage on the cathode of )/.PIV across D2:
VV
VV
VPIV
p
pp
7.0
27.0
2
(sec)
(sec)(sec)
=
=
VVV
VV
V
outpp
p
outp
4.12
7.02
)((sec)
(sec)
)(
+=
=
#e#e$now$now
t!tt!t TuTu
&'&' VVPIV outp 7.02 )( +=
The Center-Tapped Full-ave!ectier
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Brid&e *ectifierBrid&e *ectifier
EE201 Semiconductor DeviceEE201 Semiconductor Device 2929
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Brid&e *ectifier 3$erationBrid&e *ectifier 3$eration~~ t the time of $ositive half!cycle of secondary indin& volta&e thet the time of $ositive half!cycle of secondary indin& volta&e the
u$$er end of the secondary indin& becomes $ositive.u$$er end of the secondary indin& becomes $ositive.~~ Under this condition diode D4 and DC are in forard biased here asUnder this condition diode D4 and DC are in forard biased here as
other diode are in reverse biased.other diode are in reverse biased.
~~ 6ence the diode D4 and DC conduct current throu&h the load resistor.6ence the diode D4 and DC conduct current throu&h the load resistor.
t the time of ne&ative half !cycle of the secondary indin& volta&e,t the time of ne&ative half !cycle of the secondary indin& volta&e,
the loer end of the secondary indin& is $ositive.the loer end of the secondary indin& is $ositive.
~~ Under this condition, D2 and D@ are in forard biased and here asUnder this condition, D2 and D@ are in forard biased and here as
other diode are in reverse biased.other diode are in reverse biased.
~~ 6ence the diode D2 and D@ conduct current throu&h the load resistor.6ence the diode D2 and D@ conduct current throu&h the load resistor.
~~ This flos of current is in same direction as for $ositive half !cycle ofThis flos of current is in same direction as for $ositive half !cycle of
the secondary indin& volta&e.the secondary indin& volta&e.
~~ 6ence d.c out$ut is obtain across load resistor.6ence d.c out$ut is obtain across load resistor.
EE201 Semiconductor DeviceEE201 Semiconductor Device 3131
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*ectifiers in 5 meter*ectifiers in 5 meter To measure 5 current, the 5 current must first be convertedTo measure 5 current, the 5 current must first be converted
to D5 current.to D5 current.
This is accom$lished ith diodes calledThis is accom$lished ith diodes called rectifiers.rectifiers.
The $rocess of convertin& 5 to D5 is calledThe $rocess of convertin& 5 to D5 is called rectification.rectification.
The rectifiers are $laced beteen the meter in$ut and theThe rectifiers are $laced beteen the meter in$ut and themeter movement and allo current to flo in only one direction.meter movement and allo current to flo in only one direction.
(refer fi&ure 4@.@)(refer fi&ure 4@.@)
The rectifiers convert the sine ave into a $ulsatin& D5 currentThe rectifiers convert the sine ave into a $ulsatin& D5 current
that is a$$lied to the meter movement.that is a$$lied to the meter movement.
EE201 Semiconductor DeviceEE201 Semiconductor Device 3232
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*ectifiers in 5 meter*ectifiers in 5 meter
EE201 Semiconductor DeviceEE201 Semiconductor Device 3333
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5li$$er circuits5li$$er circuits
circuit hich removes the $ea+ of a aveform is +non as a circuit hich removes the $ea+ of a aveform is +non as aclipperclipper..
5li$$er circuits have the ability to cli$E off a $ortion of the in$ut5li$$er circuits have the ability to cli$E off a $ortion of the in$ut
si&nal ithout distortin& the remainin& $art of the alternatin&si&nal ithout distortin& the remainin& $art of the alternatin&
aveform.aveform.
There are to ty$es of cli$$er circuit, namely series andThere are to ty$es of cli$$er circuit, namely series and
$arallel.$arallel.
The series confi&uration is defined as the one here the diodeThe series confi&uration is defined as the one here the diode
is in series ith the load hile the $arallel confi&uration has theis in series ith the load hile the $arallel confi&uration has the
diode in a branch $arallel to the load.diode in a branch $arallel to the load.
EE201 Semiconductor DeviceEE201 Semiconductor Device 3434
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The res$onse of the series confi&uration of 'i&ure 2.44(a) due to theThe res$onse of the series confi&uration of 'i&ure 2.44(a) due to thealternatin& aveforms is $rovided in 'i&ure 2.44(b). lthou&h it as firstalternatin& aveforms is $rovided in 'i&ure 2.44(b). lthou&h it as first
introduced as a half!ave rectifier (for sinusoidal aveforms), there areintroduced as a half!ave rectifier (for sinusoidal aveforms), there are
no boundaries on the ty$e of si&nals that can be a$$lied to a cli$$er.no boundaries on the ty$e of si&nals that can be a$$lied to a cli$$er.
EE201 Semiconductor DeviceEE201 Semiconductor Device 3535
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5li$$er circuits5li$$er circuits
The netor+ of 'i&ure 2.42 is the sim$lest $arallel diode confi&urationsThe netor+ of 'i&ure 2.42 is the sim$lest $arallel diode confi&urationsith the out$ut aveform obtained due to the suare aveform in$ut.ith the out$ut aveform obtained due to the suare aveform in$ut.
The analysis of $arallel confi&uration is very similar to that a$$lied toThe analysis of $arallel confi&uration is very similar to that a$$lied to
series confi&urations.series confi&urations.
EE201 Semiconductor DeviceEE201 Semiconductor Device 3636
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The clam$in& netor+ clam$E a si&nal to different dc level. TheThe clam$in& netor+ clam$E a si&nal to different dc level. The
netor+ ill have a ca$acitor, a diode and a resistive element.netor+ ill have a ca$acitor, a diode and a resistive element. The ma&nitude ofThe ma&nitude of and must e chosen such and must e chosen such that the timethat the time
constantconstant t ( is large enough to ensure that the voltaget ( is large enough to ensure that the voltage
across the capacitoracross the capacitor does not dischar&e si&nificantly durin& thedoes not dischar&e si&nificantly durin& the
interval the diode is non!conductin&.interval the diode is non!conductin&.
Throu&hout the analysis e ill assume that for all $racticalThrou&hout the analysis e ill assume that for all $ractical
$ur$oses the ca$acitor ill be fully char&ed.$ur$oses the ca$acitor ill be fully char&ed.
EE201 Semiconductor DeviceEE201 Semiconductor Device 3737
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EE201 Semiconductor DeviceEE201 Semiconductor Device 3838
Durin# t%e interv$ 0 *+2 t%e net,or- ,i $&&e$r $s s%o,n in i#ure
2.14($) ,it% t%e diode in t%e /on st$te effective /s%ortin# out t%eeffect of t%e resistor .
Durin# t%is interv$ t%e out&ut vot$#e is direct $cross t%e s%ort
circuit $nd v0 0 ". %en t%e in&ut s,itc%es to t%e " st$te! t%e net,or- ,i $&&e$r $s
s%o,n in i#ure 2.14() ,it% t%e o&en circuit euiv$ent for t%e diode
determined t%e $&&ied si#n$. Since v0 is in &$r$e ,it% t%e diode $nd resistor. &&in# irc%%offs vot$#e $, $round t%e in&ut oo& ,i resut in
*%e ne#$tive si#n resutin# from t%e f$ct t%$t t%e &o$rit of 2" is
o&&osite to t%e &o$rit defined for v0. *%e out&ut si#n$ is c$m&ed to 0 " for t%e interv$ 0 to *+2 ut
m$int$ins t%e s$me tot$ s,in# (2") $s t%e in&ut. i#ure 2.15 s%o,s t%e
out&ut ,$veform for t%e c$m&er.
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EE201 Semiconductor DeviceEE201 Semiconductor Device 3939
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00
* Clamper *pplication(
A cla&ping circuit is often used in $V
receivers as a dc restorer.$he inco&ing co&posite video signal is
nor&all processed through capacitivelcoupled a&pliers that eli&inate the dcco&ponent, thus losing blac8 and whitereference levels and the blan8ing level.Before applied to the picture tube, thesereference level &ust be restored.
+iode Clampers
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11
$he data sheet for diodes and other devicesgives detailed information about speciccharacteristics such as the various
maximum current and voltage ratings,temperature range, and voltage versuscurrent curves V-2 characteristic.
2t is so&eti&es a ver valuable piece of
infor&ation, even for a technician. $here arecases when ou &ight have to select areplace&ent diode when the tpe of diodeneeded &a no longer be available.
$hese are the absolute &a4. values under
The +iode +ata heet
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22
3ating3ating +y!bo+y!bo
ll1450014500
111450014500
//14501450
060674T74T
ea, repetitive reverseea, repetitive reversevoltagevoltage
or,ing pea, reverseor,ing pea, reverse
voltagevoltage
DC bloc,ing voltageDC bloc,ing voltage
VVRR3RR3
VVR73R73
VVRR
9090 100100 /00/00 &&
4onrepetitive pea,4onrepetitive pea,reverse voltagereverse voltage
VVR;3R;3 :0:0 1/01/0 /50/50 &&
r!s reverse voltager!s reverse voltage VVRr&sRr&s 6969 *0*0 150150 &&
Average rectiedAverage rectied
forward current (single%forward current (single%phase resistive loadphase resistive load
:0; T:0; TAA< *9< *9ooCC
22oo
11
AA
4onrepetitive pea,4onrepetitive pea,surge current (surgesurge current (surge
applied at rated loadapplied at rated load
22F;3F;360 (for60 (for
11
AA
Maximum !ating
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33$I%&'E "()*$I%&'E "()*
selection of rectifier diodes based on ma#imum ratin&s of selection of rectifier diodes based on ma#imum ratin&s of
33, , '0F'0F, and , and **F**F..
Maximum !ating
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-//* D3D/-//* D3D/
~ used to $roduce a stabili
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!" characteristics!" characteristics
EE201 Semiconductor DeviceEE201 Semiconductor Device 4545
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dvanta&es of Diode
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?@a!ple 1#?@a!ple 1#
145*50 10& ener diode145*50 10& ener diode
!int!in
o)p olt!"e
i)p !*+ f*o,-.//V 0 31V
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-ight Emitting Dioe -ED-ight Emitting Dioe -ED~~ are often used as small indicator li&hts on electronic devicesare often used as small indicator li&hts on electronic devices
and increasin&ly in hi&her $oer a$$lications such as flashli&htsand increasin&ly in hi&her $oer a$$lications such as flashli&htsand area li&htin&.and area li&htin&.
~ 0chematic Dia&ram~ 0chematic Dia&ram
EE201 Semiconductor DeviceEE201 Semiconductor Device 4848
5atho
de node
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/D 5haracteristics/D 5haracteristics~~ Ahen a /D is forard biased (sitched on), electrons areAhen a /D is forard biased (sitched on), electrons are
able to recombine ith electron hole ithin the device,able to recombine ith electron hole ithin the device,
releasin& ener&y in the form of $hotons.releasin& ener&y in the form of $hotons.
~~ This effect is called electroluminescene and the color of theThis effect is called electroluminescene and the color of the
li&ht is determined by the ener&y &a$ of the semiconductor.li&ht is determined by the ener&y &a$ of the semiconductor.~~ /Ds $resent many advanta&es over incandescent li&ht/Ds $resent many advanta&es over incandescent li&ht
sources includin& loer ener&y consum$tion, lon&er lifetime,sources includin& loer ener&y consum$tion, lon&er lifetime,
im$roved robustness, smaller si
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/D $$lication/D $$lication
EE201 Semiconductor DeviceEE201 Semiconductor Device 5050
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hotodiodehotodiode
EE201 Semiconductor DeviceEE201 Semiconductor Device 5151
http://www.google.com.my/imgres?imgurl=http://4.bp.blogspot.com/_RA2btAL9GeE/SL1ReSw_DjI/AAAAAAAAAPA/hmpVOR-h0eA/s400/Photodiode.jpg&imgrefurl=http://ssecganesh.blogspot.com/2008/09/introduction-to-photodiodes.html&usg=__L98yHT8dn-ryG8M8GMI5NqIPubQ=&h=359&w=359&sz=8&hl=en&start=1&zoom=1&tbnid=8g5Di02jhfl43M:&tbnh=121&tbnw=121&prev=/images%3Fq%3Dphotodiode%26hl%3Den%26gbv%3D1%26tbs%3Disch:1&itbs=1http://www.google.com.my/imgres?imgurl=http://www.epn-online.com/lib/image.php%3Furi%3D/content/USER/jhappich/.bin.WEB.1190625884184.jpg&imgrefurl=http://www.epn-online.com/page/new51544/photodiode-detector-for-photon-counting-applications.html&usg=__Rlzuu1uVfay5a7SzRFMYgaaaNic=&h=300&w=365&sz=29&hl=en&start=20&zoom=1&tbnid=w3z71NZW29I0LM:&tbnh=99&tbnw=121&prev=/images%3Fq%3Dphotodiode%26hl%3Den%26gbv%3D1%26tbs%3Disch:1&itbs=1http://www.google.com.my/imgres?imgurl=http://rocky.digikey.com/weblib/Optek/Web%2520photos/OP950.jpg&imgrefurl=http://parts.digikey.com/uk/4/indexd329.html&usg=__EUXjgCNPvAiC8GWM9_eXVjVEYQY=&h=640&w=640&sz=233&hl=en&start=19&zoom=1&tbnid=JsxnBV08Znd7gM:&tbnh=137&tbnw=137&prev=/images%3Fq%3Dphotodiode%26hl%3Den%26gbv%3D1%26tbs%3Disch:1&itbs=18/9/2019 bab 2 EE201
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hotodiode 5haracteristicshotodiode 5haracteristics
0hotoioe0hotoioeis a ty$e of $hotodetector ca$able of convertin&is a ty$e of $hotodetector ca$able of convertin&
li&ht into either current or volta&e, de$endin& u$on the mode ofli&ht into either current or volta&e, de$endin& u$on the mode of
o$eration.o$eration.
~~ hotodiodes are similar to re&ular semiconductor diodeshotodiodes are similar to re&ular semiconductor diodese#ce$t that they may be either e#$osed (to detect vacuum U"e#ce$t that they may be either e#$osed (to detect vacuum U"
or H!rays) or $ac+a&ed ith a indo or o$tical fiberor H!rays) or $ac+a&ed ith a indo or o$tical fiber
connection to allo li&ht to reach the sensitive $art of theconnection to allo li&ht to reach the sensitive $art of the
device.device.
~~ Fany diodes desi&ned for use s$ecifically as a $hotodiode illFany diodes desi&ned for use s$ecifically as a $hotodiode illalso use a ;unction rather than the ty$ical ;unction.also use a ;unction rather than the ty$ical ;unction.
EE201 Semiconductor DeviceEE201 Semiconductor Device 5252
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hotodiode $$licationhotodiode $$lication
! $hotodiodes are used in similar a$$lications to other! $hotodiodes are used in similar a$$lications to other
$hotodetectors, such as $hotoconductors, char&e!cou$led$hotodetectors, such as $hotoconductors, char&e!cou$led
devices , and $hotomulti$lier tubes.devices , and $hotomulti$lier tubes.
hotodiodes are used in consumer electronics devices such ashotodiodes are used in consumer electronics devices such ascom$act disc $layers, smo+e detectors, and the receivers forcom$act disc $layers, smo+e detectors, and the receivers for
remote controls in "5*s and televisions.remote controls in "5*s and televisions.
EE201 Semiconductor DeviceEE201 Semiconductor Device 5353
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aser Diode 5haracteristicsaser Diode 5haracteristics mall si+e an 2eight mall si+e an 2eight: ty$ical laser diode measures less: ty$ical laser diode measures less
than one millimeter across and ei&hs a fraction of a &ram,than one millimeter across and ei&hs a fraction of a &ram,
ma+in& it ideal for use in $ortable electronic eui$ment.ma+in& it ideal for use in $ortable electronic eui$ment.
-o2 current, voltage, an po2er re3uirements: -o2 current, voltage, an po2er re3uirements:Fost laserFost laser
diodes reuire only a fe mill atts of $oer at @ to 42 voltsdiodes reuire only a fe mill atts of $oer at @ to 42 volts
D5 and several mill am$eres. Therefore, they can o$erateD5 and several mill am$eres. Therefore, they can o$erate
usin& small battery $oer su$$lies.usin& small battery $oer su$$lies.
-o2 intensit4: -o2 intensit4: laser diode cannot be used for s$ectacular laser diode cannot be used for s$ectacular
$ur$oses such as burnin& holes in metal, brin&in& don$ur$oses such as burnin& holes in metal, brin&in& don
satellites, or blindin& aircraft $ilots. evertheless, its coherentsatellites, or blindin& aircraft $ilots. evertheless, its coherent
out$ut results in hi&h efficiency and ease of modulation forout$ut results in hi&h efficiency and ease of modulation for
communications and control a$$lications.communications and control a$$lications.
5ie(angle 6eam: 5ie(angle 6eam: laser diode $roduces a GconeG rather laser diode $roduces a GconeG rather
than a G$encilG of visible li&ht or *, althou&h this GconeG can bethan a G$encilG of visible li&ht or *, althou&h this GconeG can be
collimated usin& conve# lenses.collimated usin& conve# lenses.
EE201 Semiconductor DeviceEE201 Semiconductor Device 5555
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aser Diode $$licationaser Diode $$lication~~ aser diodes find ide use in telecommunication as easilyaser diodes find ide use in telecommunication as easily
modulated and easily cou$led li&ht sources for fiber o$ticsmodulated and easily cou$led li&ht sources for fiber o$ticscommunication.communication.
~ They are used in various measurin& instruments, such as~ They are used in various measurin& instruments, such as
ran&efinders. nother common use is in barcode readers.ran&efinders. nother common use is in barcode readers.
~ "isible lasers, ty$ically red but later also &reen, are common~ "isible lasers, ty$ically red but later also &reen, are common
as laser $ointers.as laser $ointers.
~ Both lo and hi&h!$oer diodes are used e#tensively in the~ Both lo and hi&h!$oer diodes are used e#tensively in the
$rintin& industry both as li&ht sources for scannin& (in$ut) of$rintin& industry both as li&ht sources for scannin& (in$ut) of
ima&es and for very hi&h!s$eed and hi&h!resolution $rintin&ima&es and for very hi&h!s$eed and hi&h!resolution $rintin&
$late (out$ut) manufacturin&.$late (out$ut) manufacturin&.
~ nfrared and red laser diodes are common in 5D $layers, 5D!~ nfrared and red laser diodes are common in 5D $layers, 5D!
*3Fs and D"D technolo&y. "iolet lasers are used in 6D D"D*3Fs and D"D technolo&y. "iolet lasers are used in 6D D"D
and Blu!ray technolo&y.and Blu!ray technolo&y.
EE201 Semiconductor DeviceEE201 Semiconductor Device 5656
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IU5% */"031.IU5% */"031.
EE201 Semiconductor DeviceEE201 Semiconductor Device 5757
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5onclusion5onclusion~~ Understand the characteristics of diode and diode as a semiconductorUnderstand the characteristics of diode and diode as a semiconductor
device.device.
~~ Determine !" characteristic curve for silicon diode and e#$lain:Determine !" characteristic curve for silicon diode and e#$lain:
a. %nee "olta&e (Threshold volta&e )a. %nee "olta&e (Threshold volta&e )
b. 'orard current (in milli m$ere scale)b. 'orard current (in milli m$ere scale)
c. *everse current (in microm$ere scale)c. *everse current (in microm$ere scale)
d. Brea+don volta&ed. Brea+don volta&e
e. Burnin& level (hen d, "d e#ceeds ma#)e. Burnin& level (hen d, "d e#ceeds ma#)
~~ %no diode a$$lications as rectifiers.%no diode a$$lications as rectifiers.
~~ Diode as cli$$er and clam$er circuits.Diode as cli$$er and clam$er circuits.
~~
Understand other ty$es of diode:Understand other ty$es of diode:
a. -ener diodea. -ener diode
b. i&ht emittin& diode (/D)b. i&ht emittin& diode (/D)
c. hotodiodec. hotodiode
d. aser dioded. aser diode
EE201 Semiconductor DeviceEE201 Semiconductor Device 5858
?*3U D05U003?*3U D05U003
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?*3U D05U003?*3U D05U003
6alf ave rectifier!fahmi,afi,a+mal6alf ave rectifier!fahmi,afi,a+mal
'ull ave rectifier!lo+man,hafi