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Author Krupanidhi, S. B.; Hudait, M. K.

Author Affiliation

Mater. Res. Centre, Indian Inst. of Sci., Bangalore, India

Title Interface characterization of GaAs/Ge heterostructure grown by metalorganic vapor phase epitaxy

Appears In Proceedings of the SPIE - The International Society for Optical Engineering. vol.3975, pt.1-2 2000. p. 171-8.

Journal Abbr. Proc. SPIE - Int. Soc. Opt. Eng. (USA)

Conference Tenth International Workshop on the Physics of Semiconductor Devices. New Delhi, India. 14-18 Dec. 1999.

Publisher SPIE-Int. Soc. Opt. Eng , 2000.

Abstract GaAs/Ge heterostructures having abrupt interfaces were grown under different growth conditions and investigated by atomic force microscopy (AFM), cross sectional high resolution transmission electron microscopy (HRTEM), low temperature photoluminescence (LTPL) spectroscopy, electrochemical capacitance voltage (ECV) profiling and current/voltage (I/V) characteristics. Our results indicate that a 6 degrees off cut Ge substrate coupled with a growth temperature of ~675 degrees C, growth rate of ~3 mu m/hr and a V/III ratio of ~88 is an optimum growth condition for the buffer layer growth of GaAs/Ge heterostructure solar cells. The surface morphology was found to be very good on 6 degrees off oriented Ge substrate and rms roughness was ~30.8 nm over 10 * 10 mu m/sup 2/ area scan over 2 degrees and 9 degrees off oriented Ge substrates. The lattice indexing of HRTEM exhibited an excellent lattice line matching between GaAs and Ge substrates. The ECV profiler shows an excellent abruptness between the film/substrate interface of GaAs/Ge and also between various layers of the complete solar cell structures. Finally, the I/V characteristics of GaAs/Ge solar cells were analysed under AM0 condition. Abstract no. A2001-10-6848-002B2001-05-2530B-017.

Identifers heterostructure solar cells. metalorganic vapor phase epitaxy. MOVPE. interface characterization. atomic force microscopy. AFM. high resolution transmission electron microscopy. HRTEM. low temperature photoluminescence. LTPL spectroscopy. electrochemical capacitance voltage profiler. ECV. current/voltage characteristics. optimum growth condition. buffer layer growth. surface morphology. lattice indexing. lattice line matching. AM0 condition. 67 degC. GaAs-Ge. Ge

Subjects atomic force microscopy capacitance gallium arsenide

172

germanium III-V semiconductors interface roughness MOCVD photoluminescence semiconductor heterojunctions solar cells transmission electron microscopy

Classification Codes

A6848 ; A7340L ; A6855 ; A8115H ; A8630J ; A7855E ; B2530B ; B2520D ; B8420 ; B0520F

Chemical Indexing

GaAs-Ge/int GaAs/int As/int Ga/int Ge/int GaAs/bin As/bin Ga/bin Ge/el. Ge/sur Ge/el

Numerical Indexing

temperature 3.40E+02 K

Material Identity No.

C574-2000-225

Record Type Conference Paper

Number of References

29

ISSN 0277-786X

CODEN PSISDG

SICI 0277-786X(2000)3975:1/2L.171:ICGH;1-I

Treatment Experimental

Language English

Country of Publication

USA

INSPEC Accession

Number

6888428

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