As appearing in Microwave Journal, Microwaves & RF and ... · Empower RF Systems, Inc. ¬ 316 West Florence Ave. Inglewood, CA 90301 Phone: +1 (310) 412-8100 Fax: +1 (310) 412-9232

As appearing in Microwave Journal, Microwaves & RF and Microwave Product Digest

© 2008 Rev. 09/08

Em

power R

F Systems, Inc. ¬

316 West Florence Ave.Inglewood, CA 90301

Phone: +1 (310) 412-8100Fax: +1 (310) 412-9232Email: [email protected]

Empower RF Systems, Inc.

www.EmpowerRF.com

Solid state power amplifier based solutions serving the defense, commercial and industrial markets since 1999

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rdering Information ¬

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Table of Contents IntroductionMission

Empower RF Systems, Inc. was founded in 1999 with the mission to design, develop and manu-facture the highest quality solid-state high power amplifiers, and to become an industry leading supplier by applying the latest technologies and amplifier features in innovative ways.

Expertise Combining our superior engineering capabilities,

expertise and industry experience with the com-pany’s advanced manufacturing processes allows us to provide our customers with a comprehensive line of products and services. Our technical staff has been designing high power amplifiers and re-lated components since the 1960s. We have an ex-tensive library of PA building blocks and designs to access for solutions to your requirements.

Selection We offer a large selection of ruggedized multi-

octave RF amplifiers for communications, coun-ter-communications, radar, resonance imaging and other lab and medical uses. We offer tight control over output bandwidth and harmonics, high power efficiency and virtually zero maintenance. Exten-sive experience with military, government and commercial clients worldwide allows us to offer solutions for any RF need.

Quality Empower RF is dedicated to anticipate our

customers’ high quality requirements through the creative integration of engineering and manufac-turing technologies. This is achieved by utilizing a comprehensive, timely, and cost-effective qual-ity system, which has been the foundation of this company since its inception.

Empower RF successfully received accreditation by ISO9001:1994 shortly after starting business. This was upgraded to ISO9001:2000.

Introduction 3Mission . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Expertise . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3Selection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3Quality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Technology 4Advantages 4

Engineering Design capability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4Integration Assistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4Strong Customer Relationships . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4Efficient Manufacturing and Volume Production . . . . . . . . . . . . . . . . . . . . . . 5

Markets Served 6Military and Aerospace . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6Force Protection and National Security . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6Commercial . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7Industrial, Scientific and Medical (ISM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Global Presence 9Amplifier Products 10

Amplifier Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10Amplifier Systems . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14Custom Engineering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Broadcast Products 18Transmitters/ translators. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18DTV Amplifier Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Systems and Modules Options 20Added Functionality and Features 22Application Notes on Module Use 23Technical Reference Material 26

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Additional Features ¬4 5

Empower RF product lines incorporate state-of-the-art bipolar, MOSFET, LDMOS, GaAsFET and GaN device technologies. Our extensive library of product designs includes over four hundred docu-mented solutions ranging from basic-function PA modules to complete, multifunction PA assemblies with embedded software and controllers. Empower RF leverages its founders’ extensive experience in high power devices, amplifier technology, and pertinent market knowledge to react swiftly to new requirements and to offer a variety of cost-effec-tive, value-added solutions.

The core expertise of Empower RF’s engineer-ing team lies in ultra broadband HPA design. The use of unique matching networks, device selec-

tion, and low-loss combining techniques allows the company to design and deliver state-of-the-art products to our growing markets. Our expertise encompasses general communication, MIL STD, government, and specialty projects where high reliability and financially viable solutions are es-sential.

For the personal communications market, Em-power RF is continually developing products to meet the strict linearity and efficiency re-quirements imposed by the cellular, WiMAX, CDMA2000 and 3GPP operations. Empower RF employs linearization techniques such as pre dis-tortion, Direct Injection Pre Distortion TM, and feed forward.

Technology

AdvantagesEngineering Design Capability

Our engineering team has extensive experience in the industry in designing broadband and band-specific solid state power amplifiers. Our ampli-fiers are used in an array of systems applications that cover mission critical requirements for de-fense, commercial, and ISM customers. Empower is especially effective at creating low cost modular designs that can be adapted to meet specific cus-tomer requirements. Additionally, our engineer-ing team can, at a minimal cost, add extra func-tionality features. A non-exhaustive list includes ultra-fast blanking, weight reduction (for airborne applications), TX/RX switching, multiple bands in a single chassis with internal RF switching, battery operation with push-to-talk (PTT) capability for battery life extension, RF envelope tracking for RF immunity waveform preservation (EMC) and BIT.

Integration AssistanceOur engineering team will support you during

the integration process of our products into your system, helping you to iron out any unforeseen in-terfacing or other type of amplifier related issues.

Strong Customer Relationships

At Empower RF, we pride ourselves in forming excellent working relationships with our custom-ers, starting from the initial inquiry stage and continuing through delivery and integration. Engi-neering support is available through all phases of the relationship and our assurance that our products consistently meet required specifications has led to strong customer loyalty.

Efficient Manufacturing and Volume Production Since its inception, Empower RF has utilized an advanced

design and manufacturing system that starts with a thorough contract review. Once the requirements are fully understood, design activities are planned with scheduled preliminary (PDR) and critical (CDR) design reviews. Highly efficient manufacturing processes are employed throughout the process. These processes utilize unique RF assembly and test methods that ensure repeatable RF performance. This manufacturing process is at the heart of Empower RF’s ISO9001 quality system.

We recognize that selecting a product from our extensive list of released designs can be difficult and sometimes an exact match does not exist. In those situations we let our expert team help. Simply attach a “design requirement” document to an email request to [email protected] and our technolo-gists will help find the best solution for your needs.

Interactive web siteEmpower’s web site provides detailed product information and parametric search function that connects the user to our extensive library of released designs.

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Markets ServedEmpower RF’s product versatility, design expertise,

and readily available added functionality allows us to effectively serve the commercial, industrial and military

markets, both domestically and internationally.

Military and Aerospace Empower RF Systems has established itself as a premier design,

development and manufacturing center of excellence in high-pow-er solid state radio frequency amplifiers. Specializing in extreme wideband linear amplifiers, Empower offers products suitable for virtually any RF, microwave and radar application.

Communications: Use of cutting-edge technology allows us to offer compact, lightweight amplifiers covering wideband and band-specific frequencies up to 6 GHz. Empower amplifiers are presently used in airborne, shipboard, vehicle mount and ground programs.

Electronic Warfare: Empower amplifiers are currently used in communications and radar jamming systems covering HF through S-band frequencies at power levels to several kilowatts. Transmit/receive switches and harmonic filters can be incorporated in these high-power amplifier systems for maximum range and selectivity without problems of self-jamming.

Radar: Our frequency-agile product line is ideal to support the demands of today’s radar systems. Systems to support applications such as synthetic aperture, fire control and phased-array radar are immediately available.

TACAN, IFF and DME: Utilized by various domestic and inter-national OEMs for their tactical air navigation (TACAN), distance measuring equipment (DME) and identification friend or foe (IFF) requirements. Power levels range from 250 watts to 6 kilowatts.

Intelligence: Enhanced small-signal performance and extensive internal shielding make Empower amplifiers top choices for all types of encrypted and digital wireless monitoring. Ease of con-cealment, electrical power economy, compact envelope and robust construction are ideal for battery-powered overwatch systems.

Force Protection and National Security IEDs: “Improvised explosive devices” have been a fast-evolving

threat in modern warfare. Amplifiers from Empower RF are impor-tant building blocks in OEM systems that are designed to counter this threat.

Domestic Security: With the threat of terrorist attacks greater than ever, Empower offers the ability for complete interdiction of illicit wireless signals—while allowing unparalleled security for authorized transmissions.

Commercial Electromagnetic and RF Interference (EMI/RFI): With the

prevalence of wireless transmitters in the modern urban environ-ment, Empower’s amplifiers permit verifying products for hardness against EM/RF interference. Highly linear performance across multiple octaves allow us to supply a compact, user-friendly pack-age that can handle interference simulations at multiple frequencies and at field strengths to 600 volts per linear meter.

Communications: Empower’s 7000 series amplifiers are specifi-cally designed to meet the stringent multitone performance re-quired for clearest communications in today’s congested RF bands. Compact, power-efficient designs maximize valuable space in towers and network operations centers.

Broadcasting: Empower has met head-on the challenges of pow-er amplification for emerging digital commercial broadcast such as DTV and high-definition radio. Tight control of output bandwidth and harmonics enables Empower’s amplifiers to provide broadcast engineers excellent control over RF coverage and long MTBF ensure a reliable, low-maintenance network. We have an existing line of ATSC DTV transmitters/ translators that are FCC certified, and we continue to release modules and systems optimized for these applications.

Industrial, Scientific and Medical (ISM) Industrial: Empower is proud to offer the power and flexibil-

ity for diverse applications such as semiconductor processing, thin-film and diamond vapor deposition, plasma processing and microwave-based heating. Lowest cost of ownership, virtually zero maintenance and high duty cycles make Empower products ideal enterprise solutions.

Scientific: Enhance the output of any science program with the reliability, power and precision of Empower amplifiers whether transmitting critical instructions in a billion-dollar space program, taking ultra-precise Doppler measurements or boosting the data yield of linear accelerator experiments.

Medical: MRI, NMR: Capable of sustaining average power requirements

over 1 kilowatt into a variety of loads makes Empower’s broad-band amplifiers ideal for resonance imaging of all types.

Oncology Treatment Systems: Extremely high peak-power S-band amplifiers are available for directed-energy malignancy treatment systems.

Ultrasound: Ultra-low frequency RF amplifiers are available for early detection of tumors, emboli, cysts, calcifications and cracks or defects in implants.

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Greenland

French Guiana

CUBA

COLOMBIA

PERU

BOLIVIA

CHILE

C A N A D A

MEXICO

R U S S I A

C H I N A

SURINAME

ZIMBABWE

ZAMBIA

ANGOLA

TANZANIA

AFRICASOUTH

KENYAUGANDA

CENTRALAFRICAN REPUBLIC

YEMENN I G E R

CAMEROON

GABON

GUINEA

M A L IMAURITANIA

SENEGAL

NORWAYSWEDEN

FINLAND

FRANCE

SPAIN

EST.

LAT.

LITH.

ITALY

LAOS

JAPAN

PHILIPPINES

THAILAND

MALDIVES

SRILANKA

M A L A Y S I A

I N D O N E S I A

A U S T R A L I A

NORTH KOREA

MOROCCO

(FRANCE)

PARAGUAY

ICELAND

UNITED

KINGDOMIRELAND

CZECH REP.SLOVAKIA

ROMANIA

ALB.

BELARUS

SYRIA

(DENMARK)

U K R A I N EMOLDOVA

GEORGIA

AZERBAIJANARMENIA

U N I T E D S T A T E S

I R A N

IRAQAFGHANISTAN

PAKISTAN

AUSTRIAHUNGARY

SERBIA

MONT.

BURMAI N D I A

T U R K E Y

B R A Z I L

A L G E R I AL I B Y A

E G Y P T

BOS. &HER.

NIGERIA

JORDAN

ISRAEL

OMAN

GERMANY POLAND

M O N G O L I A

BOTSWANA

NAMIBIA

TURKMENISTANUZBEKISTAN

KYRGYZSTAN

TAJIKISTAN

BULGARIA

GUYANA

URUGUAY

BENIN

TOGOD'IVOIRE

CÔTE

SAUDI

ARABIA

KOREA

GREECE

MACEDONIA

MADAGASCAR

U. S.

ARGENTINA

CHAD

VENEZUELAGHANA

S U D A N

MALAWI

MOZAMBIQUE

ETHIOPIA

SOMALIA

REP. OFTHE

CONGODEMOCRATIC

REPUBLIC

OF THE CONGO

K A Z A K H S T A N

Cayenne

QUEEN ELIZABETH

ISLANDS

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Global Presence

Offices and Manufacturing Facilities

6 Empower RF Systems - Corporate Headquarters, Engineering, Production

6 Empower RF Systems - New York Design Center

6 Empower RF Korea - Engineering, Production

Representatives and Customer EngagementsNorth America � Middle East � Japan �

South America � Russia � China �

United Kingdom � Australia � Korea �

Scandinavia � Southeast Asia �

Europe � India �


66 6

For a complete listing and contact information for our manufacturer’s representatives, go to www.EmpowerRF.com

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Amplifier Products

10 11

Modules from 10 KHz to 520 MHz SKU Model Start (MHz) Stop (MHz) Psat (Watt) Gain (dB) Device Type1102 BBM2E3CNP 20 100 200 52 MOSFET1058 BBM1C3CP8 1 100 300 18 MOSFET1037 BBM0D3F6H 0.15 230 4 36 MOSFET1063 BBM0D3FAJ 0.15 230 10 40 MOSFET1024 BBM0D3FEL 0.15 230 25 44 MOSFET1020 BBM0D3FK7 0.15 230 100 16 MOSFET1038 BBM0D3FO7 0.15 230 250 16 MOSFET1099 BBM0D3FHM 0.15 250 50 46 MOSFET1028 BBM1C3KAJ 1 500 10 40 MOSFET1067 BBM0A3KEL 0.01 500 25 44 MOSFET1059 BBM1C3KFL 1 500 30 44 MOSFET1006 BBM2E3KHM 20 500 50 46 MOSFET1042 BBM2E3KQB 20 500 350 24 MOSFET1112 BBM1C3KCK 1 520 13 42 MOSFET1095 BBM2E3KHM 20 520 60 46 MOSFET1094 BBM2E3KKO 20 520 100 50 LDMOS

Modules up to 1000 MHzSKU Model Start (MHz) Stop (MHz) Psat (Watt) Gain (dB) Device Type1121 BBM3C3QHM 100 800 50 46 GaN1053 BBM0D4A3F 0.15 1000 2 30 MOSFET1035 BBM1C4A3E 1 1000 2 30 MOSFET1036 BBM1C4A6F 1 1000 4 32 MOSFET1023 BBM0K4AAJ 0.5 1000 10 40 MOSFET1118 BBM2E4ACK 20 1000 15 42 GaN1004 BBM1C4AEL 1 1000 25 44 MOSFET1133 BBM2E4AEM 20 1000 25 46 GaN1097 BBM2E4AEM 20 1000 25 46 MOSFET1021 BBM1C4AHB 1 1000 50 24 MOSFET1025 BBM3I4AHM 400 1000 50 46 LDMOS

Amplifier Modules Most Popular Models �For complete specifications on these standard models

and access to information from our extensive library of over 400 amplifier designs,visit www.EmpowerRF.com

SKU Model Start (MHz) Stop (MHz) Psat (Watt) Gain (dB) Device Type1100 BBM2E4AIN 20 1000 60 46 LDMOS1034 BBM1C4ALP 1 1000 120 52 MOSFET1077 BBM3K4APQ 500 1000 300 54 LDMOS

Modules up to 4200 MHzSKU Model Start (MHz) Stop (MHz) Psat (Watt) Gain (dB) Device Type1109 BBM2E5KEL 20 2500 8 40 GaN1105 BBM4A5KAM 1000 2500 12 46 GaAsFET1117 BBM3K5KEL 500 2500 25 44 GaN1107 BBM3Q5KEL 800 2500 25 44 GaAsFET1122 BBM3Q5KHM 800 2500 50 46 GaN1119 BBM3K5KHM 500 2500 50 46 GaN1113 BBM4A5KHM 1000 2500 50 46 GaN1139 BBM4A5KK5 1000 2500 100 12 GaN1132 BBM3T6AMP 960 3000 160 50 GaN1002 BBM3Q7E1E 800 4200 1.3 30 GaAsFET1030 BBM3Q7E9I 800 4200 8 38 GaAsFET1046 BBM3Q7ECK 800 4200 15 42 GaAsFET1033 BBM3Q7EEL 800 4200 25 44 GaAsFET1078 BBM3Q7EHM 800 4200 50 46 GaAsFET1082 BBM3Q7EKO 800 4200 80 50 GaAsFET

Modules up to 6 GHzSKU Model Start (MHz) Stop (MHz) Psat (Watt) Gain (dB) Device Type1138 BBM5A8CAJ 2500 6000 10 40 GaN1131 BBM5K8CGM 2500 6000 35 48 GaN

TETRA Band ModulesSKU Model Start (MHz) Stop (MHz) P1dB (Watt) Gain (dB) Device Type7006 PCM3F3H7M 292 320 25 46 LDMOS7073 PCM3J3KEM 390 395 25 46 LDMOS7071 PCM3J3KFO 390 395 60 50 LDMOS3002 GCM3E3IFL 200 400 30 44 MOSFET3033 GCM3E3IKO 200 400 100 50 MOSFET7072 PCM3I3IFO 420 425 60 50 LDMOS7063 PCM4Q5AFO 390 430 60 50 LDMOS7069 PCM3I3JDO 420 430 60 50 LDMOS

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SKU Model Start (MHz) Stop (MHz) P1dB (Watt) Gain (dB) Device Type3054 GCM3I3JNB 400 450 200 23 MOSFET3040 GCM3I3KKO 420 475 60 50 MOSFET3055 GCM3I3KEM 400 485 25 46 LDMOS3056 GCM3I3KOQ 400 500 200 54 MOSFET3026 GCM3I3KEL 400 512 15 44 MOSFET7005 PCM3J3KEM 465 514 25 46 LDMOS7054 PCM3J3LDO 450 520 60 50 LDMOS3006 GCM3I3L7I 400 550 3 38 MOSFET3065 GCM3J3SNQ 440 900 200 54 LDMOS3077 GCM3J4BNQ 450 1050 200 54 LDMOS

Cell Band ModulesSKU Model Start (MHz) Stop (MHz) P1dB (Watt) Gain (dB) Device Type7044 PCM3Q4A6M 850 870 25 46 LDMOS7068 PCM3R3SAO 850 870 500 50 LDMOS7043 PCM3Q4A6J 869 894 25 40 LDMOS7040 PCM3Q4AAL 869 894 100 44 LDMOS7018 PCM3R3SDQ 869 894 300 54 LDMOS7013 PCM3R3SGQ 869 894 500 54 LDMOS7029 PCM3Q4ACL 800 960 12 44 LDMOS7046 PCM3Q4A6M 935 960 25 46 LDMOS7017 PCM3Q4AFQ 935 960 80 54 LDMOS7001 PCM3Q4AAL 950 970 40 44 LDMOS7007 PCM3Q4AAM 800 1000 8 44 GaAsFET7021 PCM3Q4AHM 800 1000 50 46 LDMOS3066 GCM3Q4ANQ 800 1000 200 54 LDMOS3003 GCM3Q4E7I 800 1200 4 38 MOSFET

High Cell Band ModulesSKU Model Start (MHz) Stop (MHz) P1dB (Watt) Gain (dB) Device Type7008 PCM4Q4SDO 1800 1860 200 50 LDMOS7032 PCM4O4S9K 1700 1900 5 42 LDMOS7010 PCM4S5ADO 1930 1990 200 50 LDMOS7062 PCM4Q5AFO 1930 1990 300 50 GaAsFET3052 GCM4O5ANQ 1700 2000 150 54 GaAsFET7026 PCM5C5EDM 2110 2170 200 46 LDMOS7028 PCM5C5EFO 2110 2170 300 46 LDMOS3041 GCM4Q5EAJ 1800 2200 8 40 LDMOS

SKU Model Start (MHz) Stop (MHz) P1dB (Watt) Gain (dB) Device Type3014 GCM4Q5EFM 1800 2200 25 46 LDMOS3029 GCM4Q5EIN 1800 2200 45 48 LDMOS3070 GCM4P5LJN 1745 2550 50 48.5 LDMOS

WiMAX Band ModulesSKU Model Start (MHz) Stop (MHz) P1dB (Watt) Gain (dB) Device Type5004 MBM2527AJ 2500 2700 6 40 GaAsFET5005 MBM2527FL 2500 2700 25 44 GaAsFET5014 MBM2227HM 2200 2700 40 46 GaAsFET5006 MBM2527HM 2500 2700 50 46 GaAsFET5008 MBM3435KO 3400 3500 80 50 GaAsFET5002 MBM343679 3400 3600 4 20 GaAsFET5009 MBM36373F 3600 3700 20 32 GaAsFET5011 MBM3537GM 3500 3700 40 46 GaAsFET

Available Feature Set

Reverse polarity protection �

Over-voltage and power spike protection �

Temperature protection �

Temperature monitoring �

Current limit �

Current monitoring �

Overdrive protection �

Graceful degradation (temp, VSWR, Pout and overdrive simultaneously) �

For complete specifications on these standard modelsand access to information from our extensive library of over 400 amplifier designs,

visit www.EmpowerRF.com

Amplifier ProductsMost Popular Models (Continued) �

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For complete specifications on these standard modelsand access to information from our extensive library of over 400 amplifier designs,

visit www.EmpowerRF.com

High Band SystemsSKU Model Start (MHz) Stop (MHz) Psat (Watt) Gain (dB) Device Type2055 BBS3Q7E9I 800 4200 7 38 GaAsFET2001 BBS3Q7ECK 800 4200 13 42 GaAsFET2026 BBS3Q7EEL 800 4200 25 44 GaAsFET2025 BBS3Q7EHM 800 4200 45 46 GaAsFET2030 BBS3Q7EKO 800 4200 80 50 GaAsFET

Microwave Band SystemsSKU Model Start (MHz) Stop (MHz) Psat (Watt) Gain (dB) Device Type2097 BBS5A8C3G 2000 6000 2 34 GaAsFET2092 BBS5K8CAJ 2500 6000 10 40 GaN2098 BBS7A8CHM 4000 6000 50 46 GaAsFET

High Power Pulse AmplifiersSKU Model Start (MHz) Stop (MHz) Pulse Power Duty Cycle Device Type4040 GCS0C2CRR 0.1 10 2000 MOSFET2103 BBS3E4AUT 200 1000 1000 50% LDMOS4046 GCS4A4DYV 1025 1150 2500 8% PULSE4039 GCS4E4I4T 1200 1400 1000 PULSE6009 MBS6C6KUT 3100 3500 1000 10% PULSE6012 MBS6C6KVI 3100 3500 1300 5% PULSE

Amplifier Systems

High Power Systems SKU Model Start (MHz) Stop (MHz) Psat (Watt) Gain (dB) Device Type4054 GCS1D2GYV 1.5 31.5 2500 64 MOSFET2073 BBS1C3CUT 1 100 1000 60 MOSFET2087 BBS0A3EVT 0.01 200 1200 60 MOSFET2095 BBS0D3FUT 0.15 230 1000 60 MOSFET2064 BBS3E4AUT 200 1000 1000 60 LDMOS2103 BBS3E4AUT 200 1000 1000 60 MOSFET2066 BBS3K4AUT 500 1000 1000 60 LDMOS4018 GCS4M4OUT 1600 1700 1000 60 GaN4015 GCS4P4RUT 1750 1850 1000 60 GaN4058 GCS4P4RXU 1750 1850 2000 62 GaN4057 GCS4S5KUT 1900 2500 1000 60 MOSFET

Low Band SystemsSKU Model Start (MHz) Stop (MHz) Psat (Watt) Gain (dB) Device Type2061 BBS0D3FAJ 0.15 230 10 40 MOSFET2013 BBS0D3FHM 0.15 230 50 46 MOSFET2005 BBS0A3FKO 0.01 230 100 50 MOSFET2036 BBS0A3FOQ 0.01 230 300 54 MOSFET2075 BBS0A3KEL 0.01 500 25 44 MOSFET2077 BBS0D4A3F 0.15 1000 2 32 MOSFET

Mid Band SystemsSKU Model Start (MHz) Stop (MHz) Psat (Watt) Gain (dB) Device Type2082 BBS0K4AAJ 0.5 1000 10 40 MOSFET2042 BBS1C4AEL 1 1000 25 44 MOSFET2023 BBS1C4AHM 1 1000 50 46 MOSFET2024 BBS1C4ALP 1 1000 120 52 MOSFET4056 GCS4E4SQR 1200 1900 400 56 GaN

Amplifier ProductsMost Popular Models �

Note: The product specifications listed here have been summarized in order to fit the format of this brochure.

Individual product datasheets with much more detail can be found on our website www.EmpowerRF.com

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Custom Engineering

16 17

Amplifier ProductsCustomization Example

Amplifier Design Consideration

Touch ScreenMonitor and Control

LCD control function,switching andalarm/ control

To individualamplifiers

RS232

Ethernet

RS422

AC or DC power supply(select to the voltage)

Input overdrive protection

Thermalprotection

OutputRF connector

InputRF connector

Linearization

Automaticlevel control

Manualgain control

Transmitdisable (mute)

Select EitherManual orAutomatic

Outputpower detection

Reversepower protection

Supplyvoltage protection

Octavefilters

1600

1200

20002500

4000

6000

F/RMonitor

TestLoad

Monitor Point

ALC Loop

Temperature Controlled Fans

Driver and Control High Power Devices Octave Filters Output Protection

GainControlledDriver Amp

TransmitDisable

3000 to 6000 MHz

3000 to 6000 MHz

1000 to 3000 MHz

1000 to 3000 MHz

LCD control function,switching andalarm/ control

RS232

Ethernet

RS422

Transmit Enable

AC Power Supply

Full customization projects require detailed performance specifications and review of end application.

To help start that process, tell us about your needs via our interactive design questionnaire and Empower experts will contact you to initiate a preliminary design review:

http://www.empowerrf.com/ident/design_request_amplifier.php

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Highest tolerance to poor load VSWR �

Automatic linearization for superior harmonic content �

Efficient design ideal for restricted power budgets �

Broad frequency response �

High power output in a ruggedized package �

CNC-machined housing for perfect fit and RF-tight seal �

Fully customizable – inquire with our sales team �

ApplicationsIntegration into new or existing wireless equipment �

Driver for high power amplifier systems �

Based on our advanced microstrip amplifier technology, the GCS series ATSC transmitter/translators represent good value-for-dollar ATSC broadcast equipment.

Value-leading cost of ownership provides low power TV (LPTV) licensees opportunities to own multiple transmitter sites. As a stand alone transmitter, the GCS can directly accept SMPTE 310M digital A/V from the studio or a pre-recorded programming source.

When configured as a booster or coverage gap filler, any number of GCS transmitters can be synchronized with the main broadcast to enhance on-channel signal propagation and distribution. When translating to a different channel than the main broadcast, a precise internal clock maintains channel IF. Full signal error correction is provided to ensure the cleanest output.

Transmitters / Translators

DTV Amplifier Modules

18 19

Broadcast Products

As appearing in Broadcasters Show Daily

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Systems and Modules OptionsSystem ChassisOption Number Picture Description

B2U 011 Bench Top 2U - 8.5”x3.5”x16”

B3U 012 Bench Top 3U - 8.5”x5.25”x16”

R2U 021 Rack Mount 2U - 19”x3.5”x18”

R3U 022 Rack Mount 3U - 19”x5.25”x22”

R4U 023 Rack Mount 4U - 19”x7.0”x22”

R5U 024 Rack Mount 5U - 19”x8.75”x22”

R6U 025 Rack Mount 6U - 19”x10.5”x22”

RMS 026 Rack Mount Chassis Slides

C19U 027 Cabinet 19U - 21.79”x33.53”x30.71”

System Option PackagesOpt01 B2U, FCN, FGAOpt02 B2U, RCN, FGA

Opt03 R2U, FCN, FGAOpt04 R2U, RCN, FGAOpt05 R2U, FCN, LCDOpt06 R2U, RCN, LCD

Opt07 R3U, FCN, FGAOpt08 R3U, RCN, FGAOpt09 R3U, FCN, LCD

Opt10 R3U, RCN, LCD



Supply VoltagesOption Number DescriptionACA 031 100-240 VAC, Single PhaseACB 032 180-260 VAC, Single PhaseACC 033 208 VAC, 3-PhaseACD 034 380 VAC, 3-Phase

DCA 041 12-15 VDCDCB 042 24 VDCDCC 043 28 VDCDCD 044 32 VDCDCE 045 48 VDCDCF 046 18-36 VDC

ConnectorsOption Number Description

FCN 051 Front Panel Type-NRCN 052 Rear Panel Type-N

FSP 053Front Panel SMA-F Sample Port

RSP 054Rear Panel SMA-F Sample Port

Modules OptionsOption Number Description

HS0 071 HeatsinkHSF 072 Heatsink with built in fan(s)VVA 073 Built in Gain AdjustmentSHD 074 Shutdown: F, M, S

NTO 075N-Type Female Output Connector

NIO 076N-Type Female In/Out Connector

FTB 077 Feed-Thru Bracket

TRA 078Heatsink Assembly with T/R Switch

RSD 079Reverse Shutdown Polarity (TTL Hi - Enable)

DOP 080 Dual Output

STO 081SMA Female Right Angle Output Connector

Control OptionsOption Number Picture Description

FGA 061 Front panel 10 turns manual gain adjustment.

LCD 062

Touchscreen digital display, including fwd/rev power indica-tion (dB or watt scale), gain adjustment, ALC fast/slow, on/off, standby mode, fault indication, rear panel HPIB IEEE-488.2 or full duplex RS232 remote interface. Note: Output power is lowered by 0.5 – 0.75 dB.

INT 063Rear panel interlock function - Shutdown [F<1 µs; M<50 µs; S=50 µs to 50 ms]

LPS 064 Harmonics rejection low pass filter switchDBS 065 Dual Band Switching - TTL

RGA 066Rear panel gain adjustment via 9-pin DSUB connector. [0-5 volt external voltage source.]

ALC 067 Internal analog level controlTRS 068 Tx / Rx switch system

HSOHSF NIO

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Application Notes on Module UseUsage and Implementation Tips from the Experts

Important Considerations to Amplifier Integration:

Heat dissipation �

Adequate electrical power availability �

Chassis/earth ground �

Controls and alarms �

RF impedance matching �

Cooling RequirementsEmpower’s amplifiers rely on passive cooling

techniques due to their simplicity, reliability and cost. When planning an amplifier implementation, consider the following cooling methods:

ConductionThis is when thermal energy moves through the

heatsinking material from hot to cold. It occurs any time a temperature difference exists between items in contact. Fastening amplifiers to a suffi-cient mass of copper could be an effective conduc-tion cooling system. In any case, cooling system designs based purely on conduction rely on materi-als with excellent thermal conductivity and/or high specific heat. This can be as simple as attaching the amplifier to a sufficiently massive bulkhead or as complex as a system of heat pipes and heat exchangers.

Convection/RadiationIn most amplifier systems, heat is conducted from

the amplifier directly into a finned heatsink, where the thermal energy is radiated into the ambient air, or a fan forces cool air into the heatsink fins for convective cooling. This type of cooling system

is easy to design and its mechanics are well under-stood.

Empower’s amplifier housings are CNC-ma-chined to provide the most precise mating surfaces practicable, which gives greater metal-to-metal contact and helps to transfer heat away from the amplifier more efficiently. “The Microscopic View” drawing (below) shows a representation of the tiny peaks and valleys that naturally occur on any surface. The air gap between the two mated surfaces, though small, can represent a significant thermal barrier. A thin layer of thermal transfer compound applied between the two surfaces helps to bridge the gap and is an inexpensive way to improve cooling efficiency.

In most cases the amplifiers are attached to their heatsinks with screws. Empower amplifiers are designed with multiple screw holes located in pre-cise bolt patterns to more easily allow them to be fastened to their respective equipment. Screws and other fasteners should be tightened to the torque specification provided by the manufacturer to provide optimal clamping force without danger of distortion of the heatsink or amplifier chassis.

Reduced Weight ChassisDesigned for airborne applications, weight reduc-

tion is achieved through novel design and fabrication techniques that remove unnecessary material yet retain mechanical strength.

We also employ the latest in heatsink technology combining low weight with excellent thermal transfer.

Dual-Band AmplifiersWhen more than one amplifier is required to cover the

frequency span, external RF switch boxes can increase system losses due to the need for long RF cables be-tween the box and the amplifiers.

Mounting two amplifiers in one system chassis results in major savings since inter-nal

RF switching creates short cable runs, and the added benefit in system components (such as the DC power supply) can be shared.

Internal switching arrangement showing shared DC power supply

Internally switched 0.8-6.0 GHz amplifier

Reduced Weight Module Chassis

Ultralight System Chassis

Added Functionality & Features

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Designing for the EnvironmentAltitude and humidity can be a significant factor

in convective cooling system design. The basis of convective cooling is the number of air molecules passing the heatsink fins, so the lack of air pressure (altitude) or presence of water vapor (humidity) re-duces the number of air molecules per unit volume available to cool the amplifier.

The following table can be used as a preliminary guideline for heatsink sizing on amplifiers that will see altitude extremes:

Altitude (Metres)

Altitude (Feet)

Derating Factor

0 (sea level) 0 1.001,000 3,000 0.951,500 5,000 0.902,000 7,000 0.863,000 10,000 0.803,500 12,000 0.75

Altitude Derating Factors

Usually, shortcomings in heat dissipation can be made up by selecting a larger and/or more massive heatsink, a copper/alu-minum heatsink, and/or higher per-formance cooling fans. In all cases, fans with the highest airflow volume should be used that fit within the DC current consumption budget. Keep-ing the amplifier(s) as cool as possible also helps increase their operating lifetime.

Empower amplifier modules have precision internal temperature sensors with a real-time temperature output in the 9-pin DSUB connector. If fail-ure of a cooling fan could cause a critical system failure, the temperature sensor can be used to con-trol an external fan speed controller, which helps increase fan life by moderating its usage to periods of high heat.

Power SupplyEmpower RF amplifiers typically utilize supply

voltages at 12 or 28 volts DC. In order to prevent tripping the built-in over-voltage and over-current

shutdown routines, DC power supplies should utilize circuitry to protect against voltage spikes, and should be held to 150 mV peak-to-peak ripple (12/28 volt systems ±1% voltage tolerance).

Power Supply Impedance

A power supply with the lowest impedance should be selected, as higher impedance power supplies introduce additional unwanted noise to the system. Under dynamic loading, a sudden high-current demand from the amplifier could cause a high-impedance power supply to introduce enough noise to appear as an intermittent problem.

Additional decoupling techniques should be em-ployed as deemed fit by the system’s engineer.

Transmitter System Power-Up Sequence

The power amplifier should be the final RF component to be powered-up in order to prevent transients from damaging the amplifier, to prevent RF transmission during the modulator or exciter startup, and to prevent RF transmission before the modulator has stabilized.

An amplifier in many applications can oper-ate in a burst style of RF transmission, where the transition from idle use to max power can be rapid. This will create a similar require-ment on the power supply system. If the supply cannot sup-ply the instantaneous current requirement,

the high power output devices get presented with a transient half on state. This can both destabilize the amplifier or damage the device due to a biasing condition it was not designed for.

Good system design requires either batteries or high value capacitors in the supply circuit. Smoothing capacitors should also be mounted close to the amplifier to prevent hum, ripple and RF to be injected to the amplifier via the DC sup-ply circuit.

Chassis Earth/GroundingEmpower amplifier products require a low-

impedance path to electrical ground as with any electrical equipment. Keeping the amplifier at the same ground potential as other connected equip-ment is a consideration in ground system design, but also consider that the amplifier may eventually be connected to an external antenna, which could present a significant electrical shock hazard due to lightning strike. A properly designed ground system minimizes hazards from lightning strike, transient energy delivered via the AC power trans-mission lines, and other shock hazards due to other electrical wiring faults.

RF Matching Empower amplifiers are highly tolerant to im-

pedance mismatch; however, a 50 ohm load will transfer RF power most efficiently.

Control Circuit DesignAmplifier internal controls and monitoring can

be accessed via a 9-pin DSUB connector located on the side of the amplifier chassis. Typical func-tions available are real-time current consumption, real-time operating temperature, gain control and RF mute.

Parameter Value UnitHeatsink flatness 0.012 inch per foot in

Thermal transfer compoundSilicone-free synthetic grease, e.g. Sil-Free™ 1020

Thermal compound thickness Apply as thinly as possibleHeatsink mounting screw torque Per manufacturer specifications N-mPower-up delay 100 µsGround impedance As low as possible OhmPower supply impedance As low as possible Ohm“Amplifier case” max temperature See datasheet (typical 60°C) °C

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Start Frequency

The frequency where the amplifier’s low end response is tuned to 1 dB roll off.

Stop Frequency

The frequency where the amplifier’s high end response is tuned to 1 dB roll off.

Bandwidth (BW)

The frequency range covered between the start and stop frequencies.

Power Output PCW (Watts)This is commonly stated as the CW power

output. The modulated power output is re-rated according to the crest factor of a specified modula-tion scheme to maintain linearity.

Measurement Units for Power and GainMicrowave amplifier power output is commonly

rated in dBm, or decibels relative to one milliwatt (0 dBm = 1 mW) See the table below.

Example:

Power10 mW +10 dBm

100 mW + 20 dBm

1000 mW + 30 dBm

100 W + 50 dBm

GainGain is defined as the ratio of input to output

power in dB. An amplifier taking a 10 mW (10 dBm) input, and providing 1 watt (30 dBm) output has a gain of 20 dB.

Example: A low noise amp (30 dB gain) is cascaded with a driver amp (20 dB gain) and a power amp (10 dB

gain). The total gain will be 30+20+10 = 60 dB.

Gain is measured at +25°C unless otherwise specified.

Small Signal Gain Variance ΔG (dB)The difference between the maximum and mini-

mum gain is the gain across the bandwidth (BW) of the amplifier at a constant ambient temperature, as measured below the 1dB compression point (P1dB). It can be written as xx dB peak to peak or ± xx/2 dB.

Example: High gain 33 dB, low gain 30 dB. The gain flat-ness will be (33-30)/2 = ±1.5 dB.

Minimum GainThe gain specified in this catalog is minimum

gain, which is defined as the lowest gain point in the amplifier’s operating frequency range. Gain is measured at +25°C unless otherwise specified.

Gain Variation Over TemperatureIn some applications the temperature range may

change from -54° to +85°C or -20° to +70°C.

Gain will typically drop at higher operating tem-peratures; as a general rule of thumb the amplifier loses 0.015 dB/stage/ °C.

The gain variation over temperature of a standard four stage amplifier will be -0.015*4*(20+70) = -5.4 dB from -20 to +70 °C. This gain variation over temperature (gain var. OT or VS temp) can be written as -5.4 dB p-p or ±2.7 dB.

Temperature Compensated AmplifierIn order to compensate for excess gain at low

temperatures, and gain loss at high temperatures, a temperature compensated-amplifier can be made. This amplifier will have a built-in PIN-based at-tenuator stage, which reserves gain at lower tem-

Technical Reference Materialperatures and releases gain at higher temperatures. The result is an amplifier with tighter gain control over specified frequency and temperature ranges.

Noise FigureAs with any electrical component, an amplifier

introduces some noise, and is rated in dB. Noise figure is rated at 25°C unless otherwise noted.

P1dBAmplifier output is commonly rated at the point

where its gain is compressed by 1 dB, or P1dB. In the linear region the output power is the sum of the input power and the gain (= 0 dBm, Gain 20 dB, +20 dBm). As input power increases, the output power will increase proportionately until the difference between the small signal gain to the actual gain is 1 dB. When selecting an amplifier, consider that most communication systems are operated 7 to 10 dB below P1dB.

Input level Pin (dBm)Generally speaking, Empower’s amplifier power

output is achieved with 0 dBm input power or drive level.

Crest factorCrest factor (CF) is the ratio of the peak and

average power in dB. This is the most important measurement as communication systems move into the digital age. For CDMA and similar modu-lation types the CF may reach 10 dB. If the crest factor is too large, the transmitter will not be able to handle the peak powers and amplitude distor-tion will occur. Crest factor can also reflect over-drive and overshoot problems. Knowing the CF allows designers to more accurately set amplifier power and lower operating costs.

CCDFCCDF is the amount of time the power is above

a threshold. CCDF indicates the health of a power amplifier and its ability to sustain rated power over an appropriate timeframe. This is most ap-

plicable in pre-distortion amplifier systems.

Input Return Loss (S11)Empower amplifiers are designed to operate in

an environment with poor RF impedance match-ing. However, a poor match will increase heat and reduce operating efficiency.

Harmonics H (dBc)At the stated power output (Pm) and frequency

(f1) the harmonics (2f, 3f, 4f) will be below the carrier by the stated amount.

Spurious signals Spur (dBc) Any signal which comes out of an amplifier

other than the desired signal. The spurious emis-sions include harmonics and out of band mixed products.

Operating Voltage VDDThe voltage required to be supplied to the mod-

ule to meet the specified output specifications.

Supply Current IDD This is the steady state supply current at the rated

RF output Power at room temperature.

Operating Case TemperatureThis is stated for heatsink design purposes, the

power consumed (VDD x IDD) must be dissipated by the heatsink so the case temperature is main-tained below the specified value.

Thermal OverloadCircuitry is integrated into all Empower amplifi-

ers to ensure they do not operate beyond their safe rated temperature. In over-temperature situations the amplifier shuts down (usually 85°C).

Input Over driveOverdriving the amplifier within the range stated

will not cause damage.

Explanation of Terms

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Documents

As appearing in Microwave Journal, Microwaves & RF and ... · Empower RF Systems, Inc. ¬ 316 West Florence Ave. Inglewood, CA 90301 Phone: +1 (310) 412-8100 Fax: +1 (310) 412-9232