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Artificial pinning in films, melt-textured and MgB 2 Adrian Crisan School of Metallurgy and Materials, University of Birmingham, UK and National Institute of Materials Physics, Bucharest, Romania

Artificial pinning in films, melt-textured and MgB 2

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Artificial pinning in films, melt-textured and MgB 2. Adrian Crisan School of Metallurgy and Materials, University of Birmingham, UK a nd National Institute of Materials Physics, Bucharest, Romania. CONTENTS. Motivation YBCO (REBCO) films and coated conductors MgB 2 Melt-textured 123. - PowerPoint PPT Presentation

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Page 1: Artificial pinning in films, melt-textured and MgB 2

Artificial pinning in films, melt-textured and MgB2

Adrian CrisanSchool of Metallurgy and Materials, University of Birmingham, UK

andNational Institute of Materials Physics, Bucharest, Romania

Page 2: Artificial pinning in films, melt-textured and MgB 2

CONTENTS

• Motivation

• YBCO (REBCO) films and coated conductors

• MgB2

• Melt-textured 123

Page 3: Artificial pinning in films, melt-textured and MgB 2

MotivationEnergy efficient devices and equipment (magnets, motors, transformers, power lines)

High Tc superconductors Low cost, High critical current

Losses (dissipation): Movement of flux lines (Lorenz force, Thermal fluctuations)

Solution: blocking flux lines (pinning) on various types of defects, natural and/or artificial

Nanoengineered pinning centres

Page 4: Artificial pinning in films, melt-textured and MgB 2

YBCO(REBCO) films and coated conductors

YBCO films (Coated Conductors) have many types of natural pinning centres (i.e., they may occur naturally during growth process

However, for many foreseen applications, especially in high magnetic fields, critical current still need improvement, hence larger FP, hence ARTIFICIAL PINNING CENTRES

S.R. Foltyn et al, Nat Mater 6/9 (2007) 631.

Page 5: Artificial pinning in films, melt-textured and MgB 2

Substrate decoration

1

2

4

3

5

1- substrate; 2- nanodots; 3- SC film; 4- columnar defects; 5- dislocations

2001 – A. C. and H. Ihara, Jap. Patent #3622147, EU and USA; A. C. et al. APL 79, 4547 (2001), APL 80, 3566 (2002), IEEE Trans. Appl. Supercond. 13, 3726 (2003); M. Ionescu,…, and A.C. J. Phys. D: Appl. Phys. 37, 1824 (2004)

Page 6: Artificial pinning in films, melt-textured and MgB 2

Quasi-superlattices (quasi-multilayers)2002 – A. C., seminar AIST (unpublished)

2004 – T. Haugan et al, (USAFRL), Nature, 430, 867

2005 – B. Holzapfel group (Dresden) J. Appl. Phys. 98, 123906.

Page 7: Artificial pinning in films, melt-textured and MgB 2

Nanostructured targets (secondary phase nano-inclusions)

Page 8: Artificial pinning in films, melt-textured and MgB 2

Materials used up to now on Tl-based films, YBCO, ErBCO• substrate decoration: Ag – AIST Tsukuba (A. C.), Univ. Wollongong Australia (Ionescu, Dou,

A. C.); MgO - AIST Japan (Badica and A. C.); Y2O3 – CREST Japan (Matsumoto), Barcelona (Puig,

Obradors), Dresda (Holzapfel); Ce2O3 – AIST Tsukuba (Nie, Yamasaki); Ir – USA Univ. and Nat. Lab.

consortium.; Au, Pd, LaNiO3 – Univ. Birmingham (A. C.)

• quasi-superlattices approach: Y2BaCuO5 – USAFR, Wright-Patterson (Houghan); Y2O3 – USAFR, Dresda; YSZ; BaTMO3 (TM = transition metal = Ir, Ti, Zr, Hf); TM – Dresda;

Au, Ag, Pd, LNO, PrBCO, ns-YBCO - Univ. Birmingham (A. C.)

• impurity addition to targets: BaZrO3 – many groups (Cambridge & Los Alamos,

ORNL, CREST-Japan, Univ. Birmingham & Univ. Turku Finland, etc..); BaNb2O6 ,BaSnO3 – CREST

Japan (Matsumoto); RE3TaO7 (RE = rare earth = Er, Gd, Yb); - Univ. Cambridge & Los Alamos (J.

McManus-Driscoll); double-perovskites YBa2NbO6 (Cambridge) Gd2Ba4CuWOy – Univ. Birmingham & Cambridge (A. C.); combination of two-three types of impurities

Page 9: Artificial pinning in films, melt-textured and MgB 2

Dimensionality and strength of PCs

Page 10: Artificial pinning in films, melt-textured and MgB 2

Pinning centres in films obtained by PLD

Page 11: Artificial pinning in films, melt-textured and MgB 2
Page 12: Artificial pinning in films, melt-textured and MgB 2

Substrate decoration

Distribution of the Ag nano particles deposited at 400o C by 15 laser pulses

Page 13: Artificial pinning in films, melt-textured and MgB 2

Field dependence of critical current density at 77.3 K of pure YBCO film (open squares) and of the film grown on substrate decorated with 15 laser pulses substrate (full circles).

Page 14: Artificial pinning in films, melt-textured and MgB 2

Columnar growth of YBCO on Ag Nanodots

YBCO

STO

AFM-side view- of YBCO grown on (from left to right): Au nano—dots decorated substrate, Ag nano—dots decorated substrate and on bare substrate.

Page 15: Artificial pinning in films, melt-textured and MgB 2

Ag/YBCO quasi-multilayer films

Page 16: Artificial pinning in films, melt-textured and MgB 2

Y2O3

HRTEM showing the Cu-O planes and a large Y2O3 precipitate

Page 17: Artificial pinning in films, melt-textured and MgB 2

Cross-sectional TEM image, showing c-axis correlated defects, arrow indicates c-axis.

Mis-orientation in the boundary area

Page 18: Artificial pinning in films, melt-textured and MgB 2

High-resolution cross-sectional TEM image of the substrate-film boundary. A nano-particle can be seen near the substrate

High-resolution cross-sectional TEM image of the substrate-film boundary.

Page 19: Artificial pinning in films, melt-textured and MgB 2

Columnar structure formed from the substrate Columnar structure

Page 20: Artificial pinning in films, melt-textured and MgB 2

Nanoscale particles

Page 21: Artificial pinning in films, melt-textured and MgB 2

a) STEM image and element mapping of b) O2, c) Ba, d) Ag, e) Cu, f) Y

Page 22: Artificial pinning in films, melt-textured and MgB 2

PBCO/YBCO quasi-multilayer films

Page 23: Artificial pinning in films, melt-textured and MgB 2

High-resolution TEM image of PBCO/YBCO multilayer near the film substrate interface, arrow and circle point to a PBCO nano-particle.

A grain boundary along the c-axis.

Page 24: Artificial pinning in films, melt-textured and MgB 2

Mis-orientated grain observed in the cross section TEM image.

Defects in the middle of the film

Page 25: Artificial pinning in films, melt-textured and MgB 2

BZO-doped YBCO and multilayer architectures of BZO-doped YBCO films

BZO nano-particles in the YBCO matrix of the film deposited at 780o C

High resolution of cross section TEM image of the film deposited at low temperature, BZO nano-particles are visible, and marked by circles.

Page 26: Artificial pinning in films, melt-textured and MgB 2

Cross section TEM image of BZO-doped YBCO film deposited at 800o C, clearly visible columnar structures (nano-rods) along the c-axis are formed

Formation of Cu-O nano-particle found in the YBCO matrix of the film

Cu-O

Page 27: Artificial pinning in films, melt-textured and MgB 2

EDX mapping of the BZO-doped YBCO film using STEM mode, a) STEM image, b) mapping of Ba, c) mapping of Cu, d) mapping of O, e) mapping of Y and f) mapping of Zr

Page 28: Artificial pinning in films, melt-textured and MgB 2

Cross section TEM image of BZO-doped YBCO film near the substrate, arrow shows the c-axis of YBCO

Formation of BZO nano-rods in the mildle area of the film, arrow shows c-axis

Page 29: Artificial pinning in films, melt-textured and MgB 2

Short and long nano-rods grows together inside the YBCO matrix, along the c-axis.

The BZO nano-rods started growing from the STO substrate, along the c-axis (arrow)

Page 30: Artificial pinning in films, melt-textured and MgB 2

Some of the nano-rods are long, larger than the cross section of the image, arrow indicates c-axis

Stacking fault found in high resolution TEM image

Page 31: Artificial pinning in films, melt-textured and MgB 2

15Ag/BZO-doped YBCO multilayer architecture

Cross section image of (15Ag/1 μm BZO-doped YBCO)x2, arrow shows c direction

BZO nano-rods and nanoparticles in the YBCO matrix

Page 32: Artificial pinning in films, melt-textured and MgB 2

Co-existence of Y2O3 (circle) and Cu rich phase (rectangular) and/or BZO phase.

Defects caused by CuO2 and/or BZO phase observed in the middle area of the film.

Page 33: Artificial pinning in films, melt-textured and MgB 2

A cross section TEM image near the STO substrate, arrow show the c-axis of YBCO A distorted area near the STO substrate,

the c-axis is indicated by arrow

Page 34: Artificial pinning in films, melt-textured and MgB 2

BZO nanoparticles and nano-rodsBZO nano-rods entangled with columns of YBCO due to Ag-induced columnar growth

Page 35: Artificial pinning in films, melt-textured and MgB 2

1.5 μm BZO doped YBCO / 30 nm STO/ 1.5 μm BZO doped YBCO on Ag decorated (15 pulses) STO substrates

Page 36: Artificial pinning in films, melt-textured and MgB 2

Pinning in MgB2

• MgB2 wires are produced by various variants of Powder-In-Tube (PIT) process

• Increase of Hc2 and Jc using nano—phase additions in the precursors in the initial stage

• Carbon doping: amorphous, nano-diamond, carbon nanotubes

• Ta, Ti, Zr impurity atoms used for absorbtion of H, to form e.g., ZrH2, preventing the formation of harmful MgH2 impurity

Page 37: Artificial pinning in films, melt-textured and MgB 2

• Addition of nano-Silicon• Best doping: SiC nanoparticles

(up to 13-14 mol%)- B-rich phase- Mg2Si secondary phase- O- and Si- containing matrix

• Silicon oil liquid precursor- Si formed Mg2Si- C substitutes B sites

• Many other substitutions tried

Page 38: Artificial pinning in films, melt-textured and MgB 2

Melt-textured REBa2Cu3O7

• Elemental 123: YBa2Cu3O7, NdBa2Cu3O7

• Mixed ternary light rare earth LRE–Ba2Cu3Oy (LRE = Nd, Eu, Sm, Gd) compounds (NEG-123, NSG-123, SEG-123) have twice irreversibility line (critical current density).

• All these elements tend to sit on both the rare earth- and Ba-sites in the matrix and to form so called LRE/Ba solid solution.

• Moreover, one can vary the LRE elemental ratio. Due to differences in the LRE ion sizes, the LRE ratio variation, especially in ternary composites can affect the local tensions in the matrix and contribute to the pinning performance.

• Microstructure observations clarified that one can create nanoscale arrays in these materials and dramatically improve pinning at high magnetic fields

Page 39: Artificial pinning in films, melt-textured and MgB 2

• Besides, the melt-process technology enables introduction of non-superconducting secondary phase particles, RE2BaCuO5 “RE-211” that were found to enhance pinning at low magnetic fields.

• ZrO2 ball milling of LRE-211 particles led to nanoscale 211 phase

• Such particles (in the size of 70–150 nm) not only survived the melt-texturing process but also further reduced their size up to 20–50 nm.

• Micro-chemical analysis identified these defects as Zr-rich ZrBaCuO and (NEG, Zr) BaCuO ones

Page 40: Artificial pinning in films, melt-textured and MgB 2

• The effect of Zr in the particles size diminution stacks obviously in the chemical inertia of Zr in the superconductor matrix

• Creating nanoscale particles based on some other inert elements, like MgO or adding fine Y2Ba4CuZrOy particles to RE-123 confirmed validity of this hypothesis.

• Use of the initial powder composed of the nano-sized REBa2CuZrOy particles and 35 mol% of sub-micron Gd-211 precipitates led to the super-current density around 270 kA/cm2 at 77 K.

Page 41: Artificial pinning in films, melt-textured and MgB 2

• nanoparticles from the same chemical group, namely Mo, and Nb: MoO3 and Nb2O5

• Other family of nanoscale inclusions (RE)2Ba4CuMOy (where RE = Y, Sm, Gd, Nd, and M = Nb, Ta, W, Mo, Zr, Hf, Ag, Sb, Sn, Bi) were shown to improve drastically the properties of melt-textured 123