Archie L. Holmes, Jr.taxonomy.engin.umich.edu/wp-content/uploads/2013/02/CV...2013/02/22 · Course ECE 200: Science of Information Course Type 200-level (second-year) Enrollment

Archie L. Holmes, Jr.

University of Virginia Phone: 434-924-7770

School of Engineering and Applied Science Fax: 434-924-8818

Department of Electrical and Computer Engineering Email: [email protected]

Thornton Hall, PO Box 400743

Charlottesville, VA 22904-4743

Education

Ph.D., Electrical Engineering, University of California at Santa Barbara, June 1997.

Dissertation: "Improved Performance of 1.55 µm Semiconductor Lasers Using Wafer Fused

Cladding Layers"

Advisor: Dr. Steven P. DenBaars

Co.-Advisor: Dr. John E. Bowers

M.S., Electrical Engineering, University of California at Santa Barbara, December 1992.

B.S., Electrical Engineering (Highest Honors), University of Texas at Austin, May 1991.

Academic Experience

University of Virginia, Electrical and Computer Engineering Department

1/07 to Present Professor

University of Texas at Austin, Electrical and Computer Engineering Department

9/02 – 12/06 Associate Professor

6/97 – 8/02 Assistant Professor

Professional Membership

Institute of Electrical and Electronic Engineers

Laser and Electro-optics Society

Senior Member, 2005 to Present

General Member, 1992 - 2005

American Society for Engineering Education

General Member, 1997 - Present

Advising and Related Student Services

The University of Texas at Austin

Undergraduate Advisor, ECE Department: August 2002 – Fall 2006

Faculty Advisor, Electrical Engineering Honors Society (Eta Kappa Nu), Spring 2000 – Fall 2006

Faculty Mentor, EPS Program, College of Engineering, Fall 1998 – Spring 2003.

Faculty Advisor, Student Engineering Council, Fall 2002 - Fall 2006

mailto:[email protected]

Archie Holmes, Jr.

Page 2

Administrative and Committee Service

University of Virginia

U.Va. Strategic Planning Steering Committee Member, 2012

Sexual Misconduct Board Member, 2012

Director of the Virginia Center for Translational & Regulatory Sciences (VCTRS) Search Committee

Member - 2012

Executive Vice President & Provost Search Committee Member – 2011

Leadership in Academic Matters Advisory Committee Member – 2011 to Present

Faculty Forum for Scientific Research

Member – 2010 to Present

Executive Director & Associate Vice President for Innovation Partnerships & Commercialization

Search Committee Member – Spring 2010

Public Occasions Subcommittee of the Commencement and Convocations Committee

Member – 2010 to Present

Vice President for Research Search Committee, Member – Spring 2008

University of Virginia, School of Engineering and Applied Sciences

Technology Leaders Program (TLP) Lecturer Search Committee Member – 2012

Common Reading Committee

Co-Chair – Fall 2009 to Present

Member – Fall 2007 to Present

University of Virginia, Charles L. Brown Department of Electrical and

Computer Engineering

Ad-hoc Committee on Graduate Student Culture

Chair: Spring 2008 to Present

Graduate Recruiting Committee

Member: Fall 2007 to Present

Faculty Recruiting Committee

Member: Fall 2007 to Present

Eminent Speaker Committee

Chair: Fall 2008 to Spring 2011

Member : Fall 2007 to Present

Archie Holmes, Jr.

Page 3

University of Texas at Austin

Faculty Council, Fall 2002 – Spring 2006

Faculty Council Executive Committee, Fall 2003 – Spring 2006

Educational Policy Committee

Co-Chair, 2003-2004

Chair, 2004 – 2005, 2005-2006 academic years; Fall 2006

CLIPs Faculty Advisory Committee, Fall 2003 – Fall 2006

Technology-Enhanced Learning Committee, Spring 2004 – Fall 2004

Men’s Intercollegiate Athletics Council, Fall 2003 – Fall 2006

Task Force on Curriculum Reform, 2005-2006

Chair, Outcomes and Core Curriculum Sub-committee

Member, Final Report Drafting Committee

University of Texas at Austin, College of Engineering

ECE Chair Review Committee Member, 2005-2006

Engineering Honors Committee, Fall 2002 – Fall 2006

Advising, Admission, and Retention Committee, Fall 2002 – Fall 2006

Equal Opportunity in Engineering Committee, Fall 1997-Summer 2003

MS&E Executive Committee Member, Fall 2000 – Fall 2006

University of Texas at Austin, Department of Electrical and Computer

Engineering

Undergraduate Academic Advising

Director, Fall 2002 – Fall 2006

Appeals Committee Member: Fall 1998-Summer 2002

Appeals Committee Chair: Fall 2002 – Fall 2006

Curriculum & Quality Committee Member: Fall 2002 – Fall 2004

Minority Liaison Officer: Fall 1999-Fall 2006

Chairman Search Committee Member: Spring 2001

Faculty Metric Committee: Member, 2002

Solid-State Electronics Graduate Advisor: Spring 2000 – Fall 2001

Solid-State Electronics Graduate Admissions Head: Spring 2000 – Fall 2001

Archie Holmes, Jr.

Page 4

Professional Public Service

Guest Editor

Special Issue on Narrow Band-Gap Semiconductors, to be published in Journal of Electronic

Materials, 2008

WOCSEMMAD

Committee Member: 2007 to present

Electronic Materials Conference

Secretary: 2008 to 2011

Committee Member: 2005 to 2011

Invited Organizer for Conference: 2003, 2004, 2005, 2012

North American MBE Conference

Program Chair, 2003

Program Committee Member: 2001

American Society for Engineering Education (ASEE) Abstract Reviewer: 2010 to Present

Frontiers in Education Conference

Steering Committee Member: 2012 to present

ASEE/ERM Program Co-Chair: 2012

Abstract Reviewer: 2003 to Present

Member Of LED Working Group on “Recommendations for Liberal Education in Engineering”,

ASEE (2000-2001)

Honors and Recognition

Thomas E. Hutchinson Faculty Award Winner, 2013

The Hartfield–Jefferson Scholars Teaching Prize, 2012

Founding Member, University Academy of Teaching, The University of Virginia (2011)

Outstanding New Advisor Award from the National Academic Advising Association (Fall 2005)

Dad’s Association Centennial Teaching Fellowship, The University of Texas – Austin (Fall 2003)

Texas Excellence Teaching Award in Engineering, The University of Texas – Austin (Fall 2002)

Gordon T. Lepley IV Endowed Memorial Teaching Award, The University of Texas – Austin (Fall

2001)

Engineering Foundation Young Faculty Award, The University of Texas – Austin (Summer 2000)

Faculty Appreciation Award from Student Engineering Council, The University of Texas – Austin

(Fall 1999)

Eastman Faculty Teaching Excellence Award, The University of Texas – Austin (1998)

National Defense Science and Engineering Graduate Fellowship Recipient (1991-1994)

National Science Foundation Graduate Fellowship Honorable Mention (1991)

Archie Holmes, Jr.

Page 5

Teaching: The University of Virginia

Ratings at The University of Virginia are based on a scale from 1 (low) to 5 (high). The comparative data

are from courses of the same level taught throughout the School of Applied Sciences and Engineering.

2012-2013

Semester Fall 2012

Course ENGR 1620: Introduction to Engineering

Course Type 100-level (first year)

Enrollment 40

Overall (Comparative) Course Rating 3.96 (3.84)

Overall (Comparative) Instructor Rating 4.67 (4.04)

Semester Fall 2012

Course ECE 2630: Introductory Circuit Analysis

Course Type 200-level (second-year)

Enrollment 119



2011-2012

Semester Fall 2011



Enrollment 40



Semester Fall 2011



Enrollment 121



2010-2011

Semester Fall 2010



Enrollment 33



Semester Fall 2010



Enrollment 124


Archie Holmes, Jr.

Page 6


2009-2010

Semester Fall 2009



Enrollment 36



Semester Fall 2009



Enrollment 104



2008-2009

Semester Spring 2009

Course ECE 200: Science of Information


Enrollment 87



Semester Fall 2008



Enrollment 89



2007-2008

Semester Spring 2008

Course ECE 200: Science of Information


Enrollment 91



Semester Fall 2007



Enrollment 70



Archie Holmes, Jr.

Page 7

Teaching: The University of Texas at Austin

Ratings at The University of Texas at Austin are based on a scale from 1 (low) to 5 (high).

2006-2007

Sem. Course Course Type Overall Instructor Rating Fall 2006 EE 302H: Introduction to ECE - Honors Required Freshman 4.5

2005-2006

Sem. Course Course Type Overall Instructor Rating Spring 2006 EE 155: Engineering Design Seminar Required Junior 4.2

Fall 2005 EE 302: Introduction to ECE Required Freshman 4.6

2004-2005

Sem. Course Title Course Type Overall Instructor

Rating Fall 2004 EE 339: Solid-State Electronic Devices Required Junior 4.2


Fall 2004 EE 155: Engineering Design Seminar Required Junior 4.1

2003-2004


Rating Spring 2004 EE 396K: Semiconductor Heterostructures Graduate 4.4


2002-2003


Rating Spring 2003 EE 339: Solid-State Electronic Devices Required Junior 4.8


2001-2002


Rating Spring 2002 EE 396K: Semiconductor Heterostructures Graduate 4.6

Spring 2002 EE 339: Solid-State Electronic Devices Required Junior 4.7


2000-2001


Rating Summer 2001 EE 339: Solid-State Electronic Devices Required Junior 4.2

Spring 2001 EE 339: Solid-State Electronic Devices Required Junior 4.4


Fall 2000 EE 396K: Semiconductor Heterostructures Graduate 4.3

Archie Holmes, Jr.

Page 8

1999-2000


Rating Spring 2000 EE 339: Solid-State Electronic Devices Required Junior 4.5



1998-1999


Rating Spring 1999 EE 302: Introduction to ECE Required Freshman 4.0


1997-1998

Sem. Course Title Course Type Overall Instructor Rating Spring 1998 EE 339: Solid-State Electronic Devices Required Junior 4.2

Fall 1997 EE 339: Solid-State Electronic Devices Required Junior 4.0

Archie Holmes, Jr.

Page 9

Research Funding

Total Secured to Date (my share): $3.30 Million

Current Grants

Title: Characterization of Traps in GaInAs/GaAsSb MQW Structures

Sponsor: National Science Foundation

Role: PI (Co-PI: Patrick Fay (ECE, Notre Dame))

Amount: $369,525

Dates: 6/2009 – 5/2013

Title: Extended Wavelength Geiger Mode Photodetectors

Sponsor: MIT Lincoln Labs

Role: PI

Dates: 3/2012 – 1/2013

Amount: $86,000

Title: RIGEE: Improving Problem Solving in Electric Circuits using Cognitive Task Analysis

Sponsor: NSF

Role: PI (co-PI: David Feldon, University of Virginia)

Dates: 9/2011 – 8/2013

Amount: 131,093 (60% share)

Archie Holmes, Jr.

Page 10

Publications

h-index: 25

i10 index: 55

Calculations courtesy of Google Scholar

Summary: Over 110 publications in refereed journals. Papers in this section are separted by topic.

Photodiodes

1. B. Chen, Q. Zhou, D. C. McIntosh, J. Yuan, Y. Chen, W. Sun, et al., "Natural lithography

nano-sphere texturing as antireflective layer on InP-based pin photodiodes," Electronics

Letters, vol. 48, pp. 1340-1341, 2012.

2. B. Chen, J. Yuan, and A. L. Holmes, "Dark current modeling of InP based SWIR and

MWIR InGaAs/GaAsSb type-II MQW photodiodes," Optical and Quantum Electronics,

pp. 1-7, 2012.

3. B. Chen and A. L. Holmes, "Optical gain modeling of InP based InGaAs (N)/GaAsSb

type-II quantum wells laser for mid-infrared emission," Optical and Quantum

Electronics, pp. 1-8, 2012.

4. Yuan, J. , Chen, B. , Holmes, A.L., “Near-infrared quantum efficiency of uncooled

photodetectors based on InGaAs/GaAsSb quantum wells lattice-matched to InP”, Electronics

Letters 47(20), 1144 (2011)

5. Chen, B.; Weiyang Jiang; Jinrong Yuan; Holmes, A.L.; Onat, B.M.; “SWIR/MWIR InP-Based p-

i-n Photodiodes with InGaAs/GaAsSb Type-II Quantum Wells”, IEEE Journal of Quantum

Electronics 47(9), 1244 (2011)

6. Baile Chen; Jiang, W.Y.; Jinrong Yuan ; Holmes, A.L., Jr. ; Onat, B.M., “Demonstration of a

Room-temperature InP-based Photodetector Operating Beyond 3 μm”, IEEE Photonics

Technology Letters, 23(4), 218, (2011)

7. Jiang, W.Y. ; Baile Chen; Jinrong Yuan; Holmes, A.L., Jr., “Design and characterization of

strain-compensated InGaAs/GaAsSb type-II MQW structure with operation wavelength at

~3μm”, Proceedings of the SPIE - The International Society for Optical Engineering, v 7660, p

76603O (2010)

8. Ning Li, Hao Chen, Ning Duan, Mingguo Liu, S. Demiguel,, R. Sidhu, A.L. Holmes, Jr., and J.C.

Campbell, “High power photodiode wafer bonded to Si using Au with improved responsivity and

output power”, IEEE Photonics Technology Letters 18(23), 2526 (2006)

9. Sidhu, R.; Zhang, L.; Tan, N.; Duan, N.; Campbell, J.C.; Holmes, A.L.; Hsu, C.-F.; Itzler, M.A.,

“2.4 µm cutoff wavelength avalanche photodiode on InP substrate”, Electronics Letters 42(3),

181 (2006)

10. Sidhu, R.; Ning Duan; Campbell, J.C.; Holmes, A.L., Jr., “A long-wavelength photodiode on InP

using lattice-matched GaInAs-GaAsSb type-II quantum wells”, IEEE Photonics Technology

Letters 17(12), 2715 (2005)

11. Sidhu, R.; Chen, H.; Duan, N.; Karve, G.V.; Campbell, J.C.; Holmes, A.L., Jr., “GaAsSb

resonant-cavity enhanced avalanche photodiode operating at 1.06 m”, Electronics Letters,

40(20), 1296 (2004)

Archie Holmes, Jr.

Page 11

12. Zheng, X.G.; Hsu, J.S.; Hurst, J.B.; Li, X.; Wang, S.; Sun, X.; Holmes, A.L., Jr.; Campbell, J.C.;

Huntington, A.S.; Coldren, L.A , "Long-wavelength In0.53Ga0.47As-In0.52Al0.48As large-area

avalanche photodiodes and arrays", IEEE Journal of Quantum Electronics 40 (8), 1068 (2004)

13. N. Li, R. Sidhu, X.W. Li, F. Ma, S. Demiguel, X.G. Zheng, A.L. Holmes, J.C. Campbell, D.A.

Tulchinsky, and K.J. Williams, “High-saturation-current InGaAs/InAlAs charge-compensated

uni-traveling-carrier photodiode”, Physica Status Solidi A – Applied Research, 201(13), 3037

(2004)

14. Gauri Karve, Xiaoguang Zheng, Xiaofeng Zhang, Xiaowei Li, Ning Li, Shuling Wang, Feng Ma,

Archie Holmes, Jr., Joe C. Campbell, G. S. Kinsey, J. C. Boisvert, T. D. Isshiki, R. Sudharsanan,

Donald S. Bethune, and William P. Risk, “Geiger Mode Operation of an In0.53Ga0.47As–

In0.52Al0.48As Avalanche Photodiode”, Journal of Quantum Electronics 39(10), 1281 (2003)

15. Oh-Hyun Kwon, Majeed M. Hayat, Shuling Wang, Joe C. Campbell, Archie Holmes, Jr., Yi Pan,

Bahaa E. A. Saleh, and Malvin C. Teich, “Optimal Excess Noise Reduction in Thin

Heterojunction Al0.6Ga0.4As–GaAs Avalanche Photodiodes”, Journal of Quantum Electronics

39(10), 1287 (2003)

16. Ning Li, Rubin Sidhu, Xiaowei Li, Feng Ma, Xiaoguang Zheng, Shuling Wang, Gauri Karve,

Stephane Demiguel, Archie L. Holmes, Jr., and Joe C. Campbell, “InGaAs/InAlAs avalanche

photodiode with undepleted absorber”, Applied Physics Letters 82(13), 2175 (2003)

17. Shuling Wang, Feng Ma, Xiaowei Li, Sidhu, R., XiaoGuang Zheng, Xiaoguang Sun, A.L.

Holmes, Jr., and J.C. Campbell, “Ultra-low noise avalanche photodiodes with a "centered-well"

multiplication region”, IEEE Journal of Quantum Electronics 39(2), 375 (2003)

18. X. Sun, S. Wang, X. G. Zheng, X. Li, J. C. Campbell, and A. L. Holmes, Jr., “1.31 µm GaAsSb

resonant-cavity-enhanced separate absorption, charge and multiplication avalanche photodiodes

with low noise”, Journal of Applied Physics 93(1), 774 (2003)

19. Mohammad A. Saleh, Majeed M. Hayat, Oh-Hyun Kwon, Archie L. Holmes, Jr., Joe C.

Campbell, Bahaa E. A. Saleh, and Malvin C. Teich, “Breakdown voltage in thin III-V avalanche

photodiodes”, Applied Physics Letters 79(24), p. 4037 (2002)

20. Xiaoguang Sun, Shuling Wang, Jean S. Hsu, Rubin Shidu, Xiaoguang Zheng, Xiaowei Li, Joe C.

Campbell, and Archie L. Holmes, Jr., “GaAsSb: A Novel Material for Near Infrared

Photodetectors on GaAs Substrates”, IEEE Journal of Selected Topics in Quantum Electronics,

8(4), 817 (2002).

21. X.G. Zheng, J.S. Hsu, X. Sun, J.B. Hurst, X. Li, S. Wang, A.L. Holmes, J.C. Campbell, A.S.

Huntington, and L.A. Coldren, “A 12x12 In0.53Ga0.47As/In0.52Al0.48As avalanche photodiode

array”, IEEE Journal of Quantum Electronics, 38(11), 1536 (2002)

22. S. Wang, J.B. Hurst, F. Ma, R. Shidu, X. Sun, X. Zheng, A.L. Holmes, A. Huntington, L.A.

Coldren, and J.C. Campbell, “Low-Noise impact-ionization-engineered avalanche photodiodes

grown on InP substrates”, IEEE Photonics Technology Letters, 14(12), 1722 (2002)

23. Feng Ma, Gauri Karve, Xiaoguang Zheng, Xiaoguang Sun, Archie L. Holmes, Jr., and Joe C.

Campbell, “Low-temperature breakdown properties of AlxGa1–xAs avalanche photodiodes”,

Applied Physics Letters 81(10),1908 (2002)

24. F. Ma, S. Wang, X. Li, K. A. Anselm, X. G. Zheng, A. L. Holmes, Jr., and J. C. Campbell,

“Monte Carlo simulation of low-noise avalanche photodiodes with heterojunctions”, Journal of

Applied Physics 92(8), 4791 (2002)

25. Shuling Wang; Sidhu, R.; Karve, G.; Feng Ma; Xiaowei Li; XiaoGuang Zheng; Hurst, J.B.;

Xiaoguang Sun; Ning Li; Holmes, A.L., Jr.; Campbell, J.C., “A study of low-bias photocurrent

gradient of avalanche photodiodes”, IEEE Transactions on Electron Devices 49(12), 2107 (2002)

Archie Holmes, Jr.

Page 12

26. G.S. Kinsey, R. Sidhu, A.L. Holmes, Jr., and J.C. Campbell,” Improved Optical Coupling in

waveguide photodetectors incorporating a wedge-shaped input facet”, Optics Letters 27(9), p.749

(2002)

27. X. Sun, J. Hsu, X.G. Zheng, J.C. Campbell, and A.L. Holmes, Jr.,”GaAsSb

resonant-cavity-enhanced photdetector operating at 1.3 m”, IEEE Photonics Technology Letters

14(5), p. 681 (2002)

28. X. G. Zheng, X. Sun, S. Wang, P. Yuan, G. S. Kinsey, A. L. Holmes, Jr., B. G. Streetman, and J.

C. Campbell, “Multiplication Noise of AlxGa1-xAs avalanche photodiodes with High Al

Concentration and Thin Multiplication Region,” Applied Physics Letters 78(24), 3833 (2001)

29. Joe C. Campbell, Shuling Wang, X.G. Xheng, G.S. Kinsey, A.L. Holmes, Jr., X.Sun, R. Shidu,

and P.Yuan, “Ultra-Low Noise Avalanche Photodiodes”, Proceedings of the SPIE 4283, 480

(2001)

30. David Gotthold, Sridhar Govindaraju, Jason Reifsnider, Geoff Kinsey, Joe Campbell, and Archie

Holmes, Jr., “Molecular-beam epitaxy growth of Ga(In)NAs/GaAs heterostructures for

photodiodes”, Journal of Vacuum Science and Technology B 19(4), 1400 (2001)

31. S. Wang, R. Shidu, X.G. Zheng, X. Li, A.L. Holmes, Jr., and J.C. Campbell, “Low-noise

avalanche photodiodes with graded impact-ionization-engineered multiplication region”, IEEE

Photonics Technology Letters 13(12), p1346 (2001).

32. M.A. Saleh, M.M. Hayat, P.P. Sotirelis, A.L. Holmes, Jr., J.C. Campbell, B.E.A. Saleh, and

M.C. Teich, “Impact-ionization and noise characteristics of thin III-V photodiodes”, IEEE

Transactions on Electron Devices 48(12), p. 2722 (2001).

33. P. Yuan, C.C. Hansing, K.A. Anselm, C.V. Lenox, H. Nie, A.L. Holmes, Jr., B.G. Streetman, and

J.C. Campbell, "Impact Ionization Characteristics of III-V Semiconductors for a Wide Range of

Multiplication Region Thicknesses", IEEE Journal of Quantum Electronics 36(2), 198 (2000).

34. G.S. Kinsey, D.W. Gotthold, A.L. Holmes, Jr., B.G. Streetman, and J.C. Campbell, “GaNAs

avalanch photodiode operating at 0.94 m”, Applied Physics Letters 76(20), 2824 (2000)

35. G. S. Kinsey, C. C. Hansing, A. L. Holmes, Jr., B. G. Streetman, J. C. Campbell, and A. G.

Dentai. “Waveguide In0.53Ga0.47As-In0.52Al0.48As Avalanche Photodiode”, IEEE Photonics

Technology Letters 12(4), 416 (2000)

36. P. Yuan, O. Baklenov, H. Nie, A.L. Holmes, Jr., B.G. Streetman, and J.C. Campbell, “High-

Speed and low-noise avalanche photodiode operating at 1.06 m”, IEEE Journal of Special

Topics in Quantum Electronics 6(3), 422 (2000).

37. S. Wang, T. Li, J.M. Reifsnider, B. Yang, C. Collins, A.L. Holmes, Jr., and J.C. Campbell,

“Schottky metal-semiconductor-metal photodetectors on GaN films grown on sapphire by

molecular beam epitaxy”, IEEE Journal of Quantum Electronics 36(11), 1262 (2000)

38. X.G. Zheng, P. Yuan, X. Sun, G.S. Kinsey, A.L. Holmes, Jr., B.G. Streetman, and J.C. Campbell,

“Temperature Dependence of the Ionization Coefficients of AlxGa1-xAs”, IEEE Journal of

Quantum Electronics 36(10), 1168 (2000)

39. P. Yuan, S. Wang, X. Sun, X.G. Zheng, A.L. Holmes, Jr., and J.C. Campbell, “Avalanche

Photodiodes with an impact-ionization-engineered multiplication region”, IEEE Photonics

Technology Letters 12(10), 1370 (2000)

40. G.S. Kinsey, D.W. Gotthold, A.L. Holmes, Jr., and J.C. Campbell, “GaNAs resonant-cavity

avalanche photodiode operating at 1.064 m”, Applied Physics Letters 77(10), 1543 (2000)

41. J.C. Campbell, H. Nie, C. Lenox, G. Kinsey, P. Yuan, A.L. Holmes, Jr., B.G. Streetman, “High

speed resonant-cavity InGaAs/InAlAs avalanche photodiodes”, International Journal of High

Speed Electronics and Systems 10(1), 327 (2000)

Archie Holmes, Jr.

Page 13

42. P. Yuan, K.A. Anselm, C. Hu, H. Nie, C. Lenox, A.L. Holmes, B.G. Streetmanm J.C. Campbell,

and R.J. McIntyre, "A New Look at Impact Ionization -- Part II: Gain and Noise in Short

Avalanche Photodiodes", IEEE Transactions on Electron Devices 46(8), 1632 (1999).

43. C. Lenox, H. Nie, P. Yuan, G. Kinsey, A.L. Holmes, Jr., B.G. Streetman, and J.C. Campbell,

"Resonant-Cavity InGaAs-InAlAs avalanche photodiodes with gain-bandwidth product of 290

GHz", IEEE Photonics Technology Letters 11(9), 1162 (1999)

44. C. Lenox, P. Yuan, H. Nie, O. Baklenov, C. Hansing, J.C. Campbell, A.L. Holmes, Jr., and B.G.

Streetman, “Thin Multiplication Region InAlAs Homojunction Avalanche Photodiodes,” Applied

Physics Letters 73(6), 783 (1998).

45. C. Lenox, H. Nie, G. Kinsey, P. Yuan, A.L. Holmes, B.G. Streetman, and J.C. Campbell,

“Improved Optical Response of Superlattice Graded InAlAs/InGaAs p-i-n Photodetectors,”

Applied Physics Letters 73(23), 3405 (1998).

Dilute Nitrides

46. Michael M. Oye, Seth R. Bank, Aaron J Ptak, Robert C Reddy, Mark S. Goorsky, and Archie L.

Holmes, Jr, “Role of Ion Damage on unintentional Ca incorporation during the plasma-assisted

molecular-beam epitaxy growth of dilute nitrides using N2/Ar source gas mixtures”, Journal of

Vacuum Science and Technology B 26(3), 1058 (2008)

47. Oye, MM; Mattord, TJ; Hallock, GA; Bank, SR; Wistey, MA; Reifsnider, JM; Ptak, AJ; Yuen,

HB; Harris, JS; Holmes, AL , “Effects of different plasma species (atomic N, metastable N-2(*),

and ions) on the optical properties of dilute nitride materials grown by plasma-assisted molecular-

beam epitaxy “, Applied Physics Letters 91, 191903-1-3 (2007)

48. Michael M. Oye, Sridhar Govindaraju, Rubin Sidhu, Jason M. Reifsnider, and Archie L. Holmes,

Jr., “Diffusion mechanisms of indium and nitrogen during the annealing of InGaAs quantum weft

with GaNAs barriers and GaAs spacer layers”, Applied Physics Letters 86, 151903 (2005)

49. Michael M. Oye, Mark A. Wistey, Jason M. Reifsnider, Sumit Agarwal, Terry J. Mattord, Sridhar

Govindaraju, Gary A. Hallock, and Archie L. Holmes, Jr., Seth R. Bank, Homan B. Yuen, and

James S. Harris, Jr., “Ion damage effects from negative deflector plate voltages during the

plasma-assisted molecular-beam epitaxy growth of dilute nitrides”, Applied Physics Letters 86,

221902 (2005)

50. M. A. Wistey, S. R. Bank, H. B. Yuen, and J. S. Harris, Jr. , M. M. Oye and A. L. Holmes, Jr.,

“Using beam flux monitor as Langmuir probe for plasma-assisted molecular beam epitaxy”,

Journal of Vacuum Science & Technology A 23(3), 460 (2005)

51. Jason M. Reifsnider, Michael M. Oye, Sridhar Govindaraju, and Archie L. Holmes, Jr., “Critical

RF damage conditions for the plasma-assisted molecular beam epitaxy growth of GaInNAs with

dilute N2/Ar gas mix”, Journal of Crystal Growth 280, 7-15 (2005)

52. Sridhar Govindaraju; Jason M. Reifsnider; Michael M. Oye; Archie L. Holmes, “Rapid Thermal

Annealing Effects on the Photoluminescence Properties of Molecular Beam Epitaxy–Grown

GaIn(N)As Quantum Wells with Ga(N)As Spacers and Barriers”, Journal of Electronic

Materials, 33(8), 851 (2004)

53. Sridhar Govindaraju, Jason M. Reifsnider, Michael M. Oye, and Archie L. Holmes, Jr., “Time

and Temperature Dependence on Rapid Thermal Annealing of Molecular Beam Epitaxy Grown

Ga0.8In0.2N0.01As0.99 Quantum Wells Analyzed Using Photoluminescence”, Journal of Electronic

Materials 32(1),29 -33 (2003)

54. Sridhar Govindaraju and Archie L. Holmes, Jr., “Growth and characterization of Ga0.8In0.2(N)As

quantum wells with GaNxAs1–x(x<0.05) barriers by plasma-assisted molecular beam epitaxy”,

Journal of Vacuum Science and Technology B 20(3), p. 1167 (2002)

Archie Holmes, Jr.

Page 14

55. Jason M. Reifsnider, Sridhar Govindaraju and Archie L. Holmes, Jr., “Use of optical emission

intensity to characterize an RF plasma source for MBE growth of GaAsN”, Journal of Crystal

Growth 243(3-4), 396 (2002)

56. David W. Gotthold, Sridhar Govindaraju, Archie L. Holmes, Jr, and Ben G. Streetman, “Growth

of GaInNAs by Plasma Assisted Molecular Beam Epitaxy”, Materials Research Society

Symposium Proceedings, Vol. 618, 315 (2000)

57. David W. Gotthold, Sridhar Govindaraju, Terry Mattord, Archie L. Holmes, Jr., and Ben G.

Streetman “Growth of GaNAs by molecular beam epitaxy using a N2/Ar RF Plasma”, Journal of

Vacuum Science and Technology A 18(2), 461 (2000)

Growth and Processing

58. J. B. Hurst, Shannon D. Lewis, Michael M. Oye, Archie L. Holmes, Jr., A. J. Ptak, and R. C.

Reedy, “Unintentional calcium incorporation in Ga(Al, In, N)As”, Journal of Vauum. Science

and Technology B 25(3), 1058 (2007)

59. Michael M. Oye, et al. “Atomic Force microscopy study of sapphire surfaces anneals with a H2O

flux from a baffled molecular-beam epitaxy effusion cell loaded with Al(OH)3”, Journal of


60. Michael M. Oye, J. Ahn, C. Cao, H. Chen, W. Fordyce, D. Gazula, S. Govindaraju, J. B. Hurst, S.

Lipson, D. Lu, J. M. Reifsnider, O. Shchekin, R. Sidhu, X. Sun, D. G. Deppe, A. L. Holmes, Jr.,

and Terry J. Mattord, “Inert gas maintenance for molecular-beam epitaxy systems”, Journal of

Vacuum Science & Technology B 23, 1257-1261 (2005)

61. Terry J. Mattord, Michael M. Oye, David Gotthold, Chad Hansing, Archie L. Holmes, Jr., and

Ben G. Streetman, “Construction of a variable aperture cell for source flux control in a molecular-

beam epitaxy environment”, Journal of Vacuum Science and Technology A 22, 735 (2004)

62. David Gotthold, Sridhar Govindaraju, Jason Reifsnider, Geoff Kinsey, Joe Campbell, and Archie

Holmes, Jr., “Molecular-beam epitaxy growth of Ga(In)NAs/GaAs heterostructures for

photodiodes”, Journal of Vacuum Science and Technology B 19(4), 1400 (2001)

63. C. Lenox, H. Nie, G. Kinsey, C. Hansing, J. C. Campbell, A. L. Holmes, Jr., and B. G. Streetman,

"Substrate preparation and interface grading in InGaAs/InAlAs photodiodes grown on InP by

molecular-beam epitaxy", Journal of Vacuum Science and Technolgy B 17(3), 1175, (1999)

64. J.M. Reifsnider, D.W. Gotthold, A.L. Holmes, Jr., B.G. Streetman, "Improved Quality GaN Films

Grown by Molecular Beam Epitaxy on Sapphire", Journal of Vacuum Science and Technology B

16(3), 1278 (1998)

65. D.G Yu, C. –H Chen, A.L. Holmes, Jr, S.P. DenBaars, and E.L. Hu, “Role of Defect Diffusion in

the InP damage profile”, Journal of Vacuum Science and Technology B 15(6), 2672 (1997)

66. D.G. Yu, C.-H. Chen, A.L. Holmes, Jr, E.L. Hu, and S.P. DenBaars, “Comparing ion damage in

GaAs and InP”, Microelectronic Engineering 35 (1-4), 95 (1997)

67. A.L. Holmes, Jr., M.E. Heimbuch, G. Fish, S.P. DenBaars, and L.A. Coldren, “InP-Based

Multiple Quantum Well Structures Grown with Tertiarybutylarsine and Tertiarybutylphosphine:

Effects of Growth Interruptions on Structural and Optical Properties”, Journal of Electronic

Materials 25, 965 (1996)

68. Monique S. Gaffney, Casper M. Reaves, Roy S. Smith, Archie L. Holmes, Jr. and Steven P.

DenBaars, "Control of III-V Epitaxy in a Metalorganic Chemical Vapor Deposition Process:

Impact of Source Flow Control on Composition and Thickness", Journal of Crystal Growth 167

(1-2), 8-16 (1996).

Archie Holmes, Jr.

Page 15

69. M.S. Gaffney, C.M. Reaves, A.L. Holmes, Jr., R.S. Smith, and S.P. DenBaars, "Real-time

Composition and Thickness Control Techniques in a Metalorganic Chemical Vapor Deposition

Process", Diagnostic Techniques for Semiconductor Materials Processing II., Materials Research

Society, p. 133-8, (1996).

70. D.G. Yu, C.-H Chen, B.P. Keller, A.L. Holmes, Jr, E.L. Hu, and S.P. DenBaars, “Investigation of

improved regrown material on InP surfaces etched with methane/hydrogen/argon”, Journal of


71. S.P. DenBaars, A.L. Holmes, M.E. Heimbuch, V.J. Jayaraman, C.M. Reaves, J.B. Shealy, U.

Mishra, L.A. Coldren, and J.E. Bowers, "Indium Phosphide (InP) Based Heterostructure

Materials and Devices Grown by MOCVD using Tertiarybutylarsine (TBA) and

Tertiarybutylphosphine (TBP)", Journal of the Korean Physical Society 28, pp. S37 - S42 (1995).

72. Monique S. Gaffney, Roy S. Smith, Archie L. Holmes, Jr., Casper M. Reaves, and Steven P.

DenBaars, "Improved Composition and Thickness Control of III-V Epitaxy in a Metalorganic

Chemical Vapor Deposition Process", Proceedings of the 34th IEEE Conference on Decision and

Control, New Orleans, LA, pp. 2490-2495 (1995)

73. D.G. Yu, B.P. Keller, A.L. Holmes, Jr., E.L. Hu, and S.P. DenBaars, "Analysis of InP Etched

Surfaces using Metalorganic Chemical Vapor Deposition Regrown Quantum Well Structures",

Journal of Vacuum Science and Technology B 13 (6), 2381 - 2385 (1995).

74. B.P. Keller, J.C. Yen, A.L. Holmes, S.P. DenBaars, and U. Mishra "Flow Modulation Epitaxy of

GaxIn1-xAs/AlAs Heterostructures on InP for Resonant Tunneling Diodes", Applied Surface

Science 82-83, pp. 179-88 (1994).

Quantum Dots

75. H. Eisele, P. Ebert, N. Liu, A. L. Holmes, and C. K. Shih, "Reverse mass transport during

capping of In0.5Ga0.5As/GaAs quantum dots," Applied Physics Letters, vol. 101, pp.

233107-233107-4, 2012.

76. X.-D. Wang, N. Liu, C. K. Shih, S. Govindaraju, and A. L. Holmes, Jr. . "Spatial correlation-

anticorrelation in strain-driven self-assembled InGaAs quantum dots," Applied Physics Letters

85, 1356 (2004).

77. H. Htoon, T. Takagahara, D. Kulik, O. Baklenov, A.L. Holmes, Jr., and C.K. Shih, “Interplay of

Rabi Oscillations and Quantum Interferences in Semiconductor Quantum Dots”, Physical Review

Letters 88(8), 087401 (2002)

78. H. Htoon, D. Kulik, O. Baklenov, A.L. Holmes, Jr., T. Takagahara, and C.K. Shih, “Carrier

Relaxation and quantum dechoerence of excited states in self-assembled quantum dots”, Physical

Review B 63,241303(R), (2001)

79. H. Htoon, J. Keto, O. Baklenov, A.L. Holmes, Jr., and C.K. Shih, "Cross-sectional

Nanophotoluminesce Studies of Stark Effects in Self-Assembled Quantum Dots", Applied

Physics Letters 76(6), 700 (2000)

80. N. Liu, J. Tersoff, O. Baklenov, A.L. Holmes, Jr., and C.K. Shih, “Nonuniform Composition

Profile in In0.5Ga0.5GaAs Alloy Quantum Dots”, Physical Review Letters 84(2), 334 (2000)

81. S. Govindaraju, R. Sidhu, and A.L. Holmes, Jr., “MEE-grown InGaAs quantum dots embedded in

an InxGa1-xAs (x 0.2) matrix for 1.3 m emission”, Materials Research Society Symposium

Proceedings, Vol. 642, 315 (2000)O. Baklenov, H. Nie, J.C. Campbell, B.G. Streetman, and A.L.

Holmes, Jr., "Long-Wavelength luminescence from In0.5Ga0.5As/GaAs quantum dots grown by

migration enhanced epitaxy", Journal of Vacuum Science and Technolgy B 17(3), 1124 (1999).

Archie Holmes, Jr.

Page 16

82. Htoon, H., Hongbin, Yu, Kulik, D., Keto, W. J., Baklenov, O., Holmes, A. L., Jr., Streetman, B.

G., and Shih, C. K, "Quantum dots at the nanometer scale: Interdot carrier shuffling and

multiparticle states", Physical Review B (Condensed Matter) 60(15), 11026 (1999)

Semiconductor Lasers

83. J. Y. T. Huang, L. J. Mawst, T. F. Kuech, X. Song, S. E. Babcock, C. S. Kim, I. Vurgaftman, J.

R. Meyer, and A. L. Holmes, "Design and characterization of strained InGaAs/GaAsSb type-II

'W' quantum wells on InP substrates for mid-IR emission," Journal of Physics D-Applied Physics,

vol. 42, Jan 2009.

84. D. Tauber, M. Horita, J. Piprek, P. Abraham, A. L. Holmes, Jr., and J. E. Bowers, “The

Microstrip Laser,” IEEE Photonics Technology Letters, vol. 10, pp. 478-80, (1998).

85. K. Itaya, A.L. Holmes, S. Keller, S.G. Hummel, L.A. Coldren, and S.P. DenBaars, “Lasing

Characteristics of InGaP/InGaAlP Visible Lasers Grown by Metalorganic Chemical Vapor

Deposition with Tertiarybutylphosphine (TBP)”, Japanese Journal of Applied Physics Part

2 - Letters 34 (11B), L1540-1542 (1995).

86. Rangchen Yu, Radhakrishnan Nagarajan, T. Reynolds, A. Holmes, J.E. Bowers, S.P. DenBaars,

and Chung-En Zah, "Ultrahigh Speed Performance of a Quantum Well Laser at Cryogenic

Temperatures", Applied Physics Letters 65 (5), 528-530 (1994).

87. Daniel A. Tauber, Ralph Spickermann, Radhakrishnan Nagarajan, Thomas Reynolds, Archie L.

Holmes, Jr., and John E. Bowers, "Inherent Bandwidth Limits in Semiconductor Lasers due to

Distributed Microwave Effects", Applied Physics Letters 64 (13), pp. 1610 - 1612 (1994)

88. S.P. DenBaars, A.L. Holmes, Jr., and M.E. Heimbuch, "Compressively Strained 1.55 µm

InxGa1-xAsyP1-y/InP Quantum Well Laser Diodes Grown by MOCVD with Tertiarybutylarsine

(TBA) and Tertiarybutylphosphine (TBP)", Proceedings of SPIE Intl. Symposium on

Optoelectronics for Information and Microwave Systems, Laser Diode Technology VI, Los

Angeles CA, pp. 179-188 (1994).

89. M.E. Heimbuch, A.L. Holmes, Jr., C.M. Reaves, M.P. Mack, S.P. DenBaars, and L.A. Coldren,

"Tertiarybutylarsine and Tertiarybutylphosphine for the MOCVD Growth of Low Threshold 1.55

µm InxGa1-xAs/InP Quantum-Well Lasers", Journal of Electronic Materials 23 (2), pp. 87-91

(1994).

90. A.L. Holmes, Jr., M.E. Heimbuch, and S.P. DenBaars, "Strained GaInAsP Single-Quantum-Well

Lasers Grown with Tertiarybutylarsine and Tertiarybutylphosphine", Applied Physics Letters 63

(25),pp. 3417-3419 (1993).

91. M.E. Heimbuch, A.L. Holmes, Jr., M.P. Mack, S.P. DenBaars, L.A. Coldren, and J.E. Bowers,

"Low Threshold 1.5 µm Quantum Well Lasers Grown by Atmospheric Pressure MOCVD with

Tertiarybutylarsine (TBA) and Tertiarybutylphosphine (TBP)", Electronics Letters 29 (4), pp.

340-341 (1993).

92. M.E. Heimbuch, A.L. Holmes, Jr., M.P. Mack, S.P. DenBaars, L.A. Coldren, and J.E. Bowers,

"High Quality Long Wavelength Lasers Grown by Atmospheric Pressure MOCVD with Liquid

Group V Sources", IEEE Proceedings of the 5th Intl. InP and Related Materials Conf., Paris,

France,pp. 239-242 (1993).

93. S.P. DenBaars, A.L. Holmes, Jr., M.E. Heimbuch, and C.M. Reaves, "Low Threshold Strained

InxGa1-xAsyP1-y/InP Quantum Well Lasers Grown with TBA and TBP", paper LE-19,

Extended Abstracts of European Workshop on MOVPE-V, Malmo, Sweden (1993).

Direct Wafer Bonding

94. A. Black, A.R. Hawkins, N.M. Margalit, D.I. Babic, A.L. Holmes, Jr., Y.-L. Chang, P. Abraham,

J.E. Bowers, and E.L. Hu, "Wafer Fusion: Materials Issues and Device Results", IEEE Journal of

Special Topics in Quantum Electronics 3(3), 943-51 (1997).

Archie Holmes, Jr.

Page 17

95. R.K. Sink, S. Keller, B. Keller, D.I. Babic, A.L. Holmes, D. Kapolnek, S.P. DenBaars, J.E.

Bowers, X.H. Wu, J.S. Speck, “Cleaved GaN facets by wafer fusion of GaN to InP”, Applied

Physics Letters 68, 2147 (1996)

96. I-Hsing Tan, C.M. Reaves, A.L. Holmes, Jr., E.L. Hu, J.E. Bowers, and S. DenBaars,

"Low-Temperature Pd bonding of III-V semiconductors", Electronics Letters 31 (7), pp. 588-589

(1995).

97. I-Hsing Tan, C.M. Reaves, James Dudley, Archie L. Holmes, Jr., Dubravco Babic, Evelyn Hu,

John Bowers, and Steven P. DenBaars, "Low-Temperature Pd Direct Bonding and Electrical

Transport Across InP-Pd-GaAs Interfaces", IEEE Proceedings of the 6th Intl. InP and Related

Materials Conf., Santa Barbara, California, pp. 628-31 (1994).

Other/Misc.

98. Wenjie Chen, Baile Chen, Jinrong Yuan, Archie Holmes, and Patrick Fay, "Bulk and interfacial

deep levels observed in In0.53Ga0.47As/GaAs0.5Sb0.5 multiple quantum well photodiode",

Applied Physics Letters 101, 052107 (2012), DOI:10.1063/1.4740275

99. W. Chen, J. Yuan, A. Holmes, and P. Fay, "Evaluation of deep levels in In0.53Ga0.47As and

GaAs0.5Sb0.5 using low‐frequency noise and RTS noise characterization," Physica Status Solidi C

1-4, 2011

100. Oye, Michael M., Shahrjerdi, Davood, Ok, Injo, Hurst, Jeffrey B., Lewis, Shannon D.,Dey,

Sagnik,Kelly, David Q., Joshi, Sachin, Mattord, Terry J., Yu, Xiaojun, Wistey, Mark A., Harris,

James S., Jr., Holmes, Archie L., Jr., Lee, Jack C., Banerjee, Sanjay K., “Molecular-beam epitaxy

growth of device-compatible GaAs on silicon substrates with thin (similar to 80 nm) Si1-xGex

step-graded buffer layers for high-kappa III-V metal-oxide-semiconductor field effect transistor

applications”, Journal of Vacuum Science and Technology B25, 1098 (2007)

101. M. H. Zhang, M. Oye, B. Cobb, F. Zhu, H. S. Kim, I. J. Ok, J. Hurst, S. Lewis, A. Holmes, J. C.

Lee, S. Koveshnikov, W. Tsai, M. Yakimov, V. Torkanov, and S. Oktyabrsky, “Importance of

controlling oxygen incorporation into HfO2/Si/n-GaAs gate stacks”, Applied Physics Letters 101,

034103 (2007)

102. Xiao-Ping Yang, Richard A. Jones, Michael M. Oye, Archie L. Holmes, and Wai-Kwok Wong,

“Near Infrared Luminescence and Supramolecular Structure of a Helical Triple-Decker Yb(III)

Schiff Base Cluster”, Crystal Growth & Design 6(9), 2122 (2006)

103. Davood Shahrjerdi, Michael M. Oye, Archie L. Holmes, Jr., and Sanjay K. Banerjee, “Unpinned

metal gate/high-k GaAs capacitors: Fabrication and Characterization”, Applied Physics Letters

89, 043501 (2006)

104. Oye, M.M.; Hurst, J.B.; Shahrjerdi, D.; Kulkarni, N.N.; Muller, A.; Beck, A.L.; Sidhu, R.; Shih,

C.K.; Banerjee, S.K.; Campbell, J.C.; Holmes, A.L., Jr.; Mattord, T.J.; Reifsnider, J.M., “Atomic

force microscopy study of sapphire surfaces annealed with a H2O flux from a baffled molecular-

beam epitaxy effusion cell loaded with Al(OH) 3”, Journal of Vacuum Science & Technology B

(Microelectronics and Nanometer Structures), 24(3), 1572 (2006)

105. WK Wong, Xp Yang, RA Jones, JH Rivers, V Lynch, WK Lo, D Xiao, MM Oye, and AL

Holmes, “Multinuclear luminescent Schiff-Base-Zn-Nd sandwich complexes”, Inorganic

Chemmistry 45(11), 4340 (2006)

106. Yang XP, Jones RA, Lai RJ, Waheed A, Oye MM, Holmes AL, “Supramolecular assembly of

nanometer-sized heterobimetallic 3d-4f complexes formed with benzimidazole based N,O-donor

ligands”, Polyhedron 25(4), pp. 881-887 (2006)

107. Yang XP, Jones RA, Wu QY, Oye MM, Lo WK, Wong WK, Holmes AL, “Synthesis, crystal

structures and antenna-like sensitization of visible and near infrared emission in heterobimetallic

Zn-Eu and Zn-Nd Schiff base compounds”, Polyhedron 25(2), pp. 271-278 (2006)

Archie Holmes, Jr.

Page 18

108. Yang XP, Jones RA, Wong WK, Lynch V, Oye MM, Holmes AL, “Design and synthesis of a

near infra-red luminescent hexanuclear Zn-Nd prism”, Chemical Communications 17,1836

(2006)

109. X.P. Yang, R.A. Jones, V. Lynch, M. Oye, and A.L. Holmes, “Synthesis and near infrared

luminescence of a tetrametallic Zn2Yb2 architecture from a trinuclear Zn3L2 Schiff base

complex”, Dalton Transactions 5, p. 849 (2005).

Education-Related

110. M.K. Markey, A. Holmes, Jr., T.F. Edgar, and K.J. Schmidt, “Student-driven Learning in

Integrated Lecture-lab Classroom Environments: The Role of Mobile Computing”, The

International Journal of Engineering Education 23(3), 483 (2007).

Archie Holmes, Jr.

Page 19

Conference Presentations

Summary: Over 75 conference contributions. Talks are organized by year.

2012

1. W. Chen, B. Chen, J. Yuan, A. Holmes, and P. Fay, "Characterization and impact of traps

in lattice-matched and strain-compensated In1- xGaxAs/GaAs1-ySby multiple quantum well

photodiodes," in Device Research Conference (DRC), 2012 70th Annual, 2012, pp. 251-

252.

2. Baile Chen, Archie L. Holmes, Jr., Viktor Khalfin, Igor Kudryashov, and Bora M. Onat,

“Modeling of the type-II InGaAs/GaAsSb quantum well designs for mid-infrared laser diodes by

k*p method”, Proc. SPIE 8381, 83810F (2012)

2011

1. Baile Chen, AL Holmes, WY Jiang, and Jinrong Yuan, “Design of strain compensated

InGaAs/GaAsSb type-II quantum well structures for mid-infrared photodiodes”, presented at the

2011 11th International Conference on Numerical Simulation of Optoelectronic Devices

(NUSOD), October 2011, Rome, Italy.

2. Baile Chen, Wenlu Sun, Joe C Campbell, and AL Holmes, “Quantum efficiency modeling of PIN

photodiodes with InGaAs/GaAsSb quantum wells absorption region”, presented at the 2011 IEEE

Photonics Conference, October 2011, Washington, D.C.

3. Zhiwen Lu, Wenlu Sun, Chong Hu, Archie Holmes, Joe C Campbell, Yimin Kang, and Han-Din

Liu, “Ge on Si and InP/InGaAs single photon avalanche diodes”, presented at the SPIE Defense,

Security, and Sensing Conference, April 2011, Orlando, FL.

4. Wenlu Sun; Xiaoguang Zheng; Zhiwen Lu; Baile Chen; Holmes, A.L.; Campbell, J.C.; ,

"Numerical simulation of InAlAs/InAlGaAs tandem avalanche photodiodes," presented at the

2011 IEEE Photonics Conference, October 2011, Washington, D.C.

5. Baile Chen; Jinrong Yuan ; Holmes, A.L., Jr., “Modeling of the electrical characteristics of

SWIR/MWIR InGaAs/GaAsSb type-II MQW photodiodes” presented at the SPIE Defense,

Security, and Sensing Conference, April 2011, Orlando, FL

6. Archie L Holmes, Jr., “InP-Based Mid-infrared Photodiodes”, presented at the WOCSEMMAD

2011, Savannah, GA.

2010

1. Jiang, W.Y.; Baile Chen; Jinrong Yuan; Holmes, A.L., Jr.,” Design and characterization of strain-

compensated InGaAs/GaAsSb type-II MQW structure with operation wavelength at ~3μm”,

presented at the SPIE Defense, Security, and Sensing Conference, April 2010, Orlando, FL

2009

1. A.L. Holmes, “ Work in Progress – Quantifying Intrinsic Cognitive Load in DC Circuit

Problems”, presented at the Frontiers in Education Coferences 2009, San Antonio, TX

2. Archie L Holmes, Jr., “Near-Infrared Single Photon Counting Detectors”, presented at the

Quantum Limited Detector Workshop, RIT, Rochester, NY.

3. Archie L Holmes, Jr., “Use of SI-InP (Caps) for low dark current in small-diameter InGaAs

Photodiodes”, presented at the WOCSEMMAD 2009, Fort Meyers, Florida.

Archie Holmes, Jr.

Page 20

2008

1. Archie L Holmes, Jr., “InP-Based Mid-infrared Photodiodes”, presented at the WOCSEMMAD

2008, Palm Springs, CA.

2007 or earlier

1. (Invited) Archie L Holmes, Jr., “InP-based MIR Avalanche Photodiodes: Current Status and

Future Prospects”, presented at the 2006 IEEE LEOS Annual Meeting, Montreal, CA, paper TuI3

(2006).

2. (Invited) A.L. Holmes, Jr., J.C. Campbell, Xiaoguang Sun, Shuling Wang, R. Sidhu.; X.G.

Zheng, and Xiaowei Li, “Low noise telecommunications APDs”, presented at Semiconductor

Optoelectronic Devices for Lightwave Communication, Orlando, FL, USA (2003).

3. Archie L Holmes, Jr., “Strained GaAsSb/GaInAs quantum wells for MIR InP-based lasers”,

presented at the WOCSEMMAD 2007, Savannah, GA.

4. Michael Oye; Mark Wistey; Jason Reifsnider; Homan Yuen; Aaron Ptak; Paul May; Terry

Mattord; Sumit Agarwal; Jack Lee; Sanjay Banerjee; Gary Hallock; James Harris; Archie

Holmes; and Seth Bank, “Effects of Different Plasma Species on the Optical Properties of Dilute

Nitrides Grown by Plasma-Assisted Molecular-Beam Epitaxy”, presented at the 2007 Electronic

Materials Conferece, South Bend, In, paper GG3

5. Archie L Holmes, Jr., “Advanced InP-Based APDs for MWIR Applications”, presented at the

WOCSEMMAD 2006, Scottsdale, AZ.

6. Rubin Sidhu and Archie L Holmes, Jr., “Mid Infrared InP-based Photodiodes Operating At/Near

Room Temperature”, presented at the 2006 IEEE Summer Topicals, Quebec City, CA, paper

TuD2.3

7. Michael M. Oye; Davood Shahrjerdi; Xiaojun Yu; Sagnik Dey; David Q. Kelly; Shannon D.

Lewis; Mark A. Wistey; Jeffrey B. Hurst; Sachin Joshi; Terry J. Mattord; James S. Harris; Archie

L. Holmes; and Sanjay K.Banerjee, “GaAs Growth on Silicon Substrates Using a Thin (~80 Nm)

SiXGe1-X Step-Graded Buffer Layer for High-k III-V MOSFET Applications”, presented at the

2006 Electronic Materials Conferece, College Park, PA, paper BB3.

8. Archie L Holmes, Jr., “Strained GaAsSb/GaInAs quantum wells for Photodiodes”, presented at

the WOCSEMMAD 2005, Miami, FL.

9. Rubin Sidhu, Ning Duan, Joe C. Campbell, and Archie L. Holmes, Jr., “A 2.3 µm Cutoff

Wavelength Photodiode on InP Using Lattice Matched GaInAs-GaAsSb Type-II Quantum

Wells”, presented at the 2005 Indium Phosphide and Related Materials Conference, Glasgow,

Scotland

10. Michael M. Oye, Mark A. Wistey, Jason M. Reifsnider, Sumit Agarwal, Sridhar Govindaraju,

Seth R. Bank, Homan B. Yuen, Terry J. Mattord, James S. Harris, Gary A. Hallock, and Archie

L. Holmes, “Influence of Ion Flux and Ion Energy Distribution on the OpticalProperties of Dilute

Nitride Materials”, presented at the 2005 Electronic Materials Conference, Santa Barbara, CA,

paper L5.

11. Rubin Sidhu; Ning Duan; Joe C. Campbell; and Archie L. Holmes, “InP Based Photodiodes

Operating Beyond 2µm Using Lattice-Matched GaInAs-GaAsSb Type-II Quantum Wells”,

presented at the 2005 Electronic Materials Conference, Santa Barbara, CA, paper M8.

12. Rubin Sidhu, Ning Duan, Joe Campbell, and Archie Holmes, “2.4 µm cutoff wavelength

avalanche photodiode on Iindium Phosphide”, presented at the 18th Annual Meeting of the IEEE

Lasers and Electro-optics Society, Sydney, Australia, post-deadline paper (2005)

Archie Holmes, Jr.

Page 21

13. Sidhu, R., Chen, H., Duan, N., Karve, G.V., Campbell, J.C., Holmes, A.L., Jr., “GaAsSb

resonant-cavity-enhanced avalanche photodiode operating at 1.06 µm”, presented at the 17th

Annual Meeting of the IEEE Lasers and Electro-Optics Society (2004)

14. Karve, G., Zheng, X., Holmes, A.L., Jr., Campbell, J.C., Kinsey, G.S., Boisvert, J.C., Isshiki,

T.D., Sudharsanan, R., Bethune, D.S., Risk, W.P., “In0.53Ga0.47As/In0.52Al0.48As SACM

APDs for single photon detection”, presented at the 16th Annual Meeting of the IEEE Lasers and

Electro-Optics Society, (2003)

15. X. Sun, S. Wang, R. Sidhu, X. G. Zheng, X. Li, J. C. Campbell, and A. L. Holmes, Jr., “MBE

Growth and Device Performance of GaAsSb Resonant-Cavity-Enhanced Avalanche Photodiodes

with Separate Absorption, Charge and Multiplication Regions”, presented at the 2002 Electronic

Materials Conference, Santa Barbara, CA, USA, paper D3, June 2002.

16. J. B. Hurst, X. G. Zheng, X. Sun, S. Wang, Joe C. Campbell, and Archie L. Holmes, “Long

Wavelength InGaAs/InAlAs/InP-GaAs/AlGaAs Avalanche Photodiode Implemented by Direct

Wafer Bonding”, presented at the 2002 Electronic Materials Conference, Santa Barbara, CA,

USA, paper K4, June 2002.

17. Rubin Sidhu, Xiaoguang Sun, and Archie L. Holmes, “Influence of Growth Parameters on

Antimony Incorporation During Molecular Beam Epitaxy of III-Arsenide-Antimonides”,

presented at the 2002 Electronic Materials Conference, Santa Barbara, CA, USA, paper R4, June

2002.

18. Sridhar Govindaraju, Jason M. Reifsnider, Michael M. Oye, and Archie L. Holmes, “Analysis of

Rapid Thermal Annealing of MBE–Grown GaIn(N)As Quantum Wells with GaNAs Barriers”,

presented at the 2002 Electronic Materials Conference, Santa Barbara, CA, USA, paper HH8,

June 2002.

19. S. Wang, J. B. Hurst, F. Ma, R. Sidhu, X. Sun, X. Zheng, A. L. Holmes, J. C. Campbell, A. S.

Huntington and L. A. Coldren “Low-Noise InP-based Avalanche Photodiodes with an Impact-

Ionization-Engineered Multiplication Region”, presented at the 2002 LEOS Annual Meeting,

paper WP3.

20. Sridhar Govindaraju and Archie L. Holmes, Jr., “Growth and characterization of Ga0.8In0.2(N)As

quantum wells with GaNxAs1–x(0.05) barriers by plasma-assisted molecular beam epitaxy”,

presented at the North American MBE Conference 2001, Providence, RI.

21. G.S. Kinsey, R. Sidhu, A.L. Holmes, Jr., J.C. Campbell, and A.G. Dentai, “High Speed

Waveguide Avalanche Photodetectors”, presented at the Device Research Conference 2001,

Notre Dame, IN, June 2001

22. H. Htoon, D. Kulik, W. Wasicek, J. W. Keto, O. Baklenov, A. L Holmes Jr. and C. K.

Shih,"Cross-sectional Nano-Photoluminescence Studies of Self Assembled Quanutm Dots." ,

APS March Meeting, Minneapolis (2000)

23. J.C. Campbell, A.L. Holmes, Jr., and R.D. Dupuis, “Ultra low-noise avalanche Photodetectors

and AlxGa1-xN/GaN photodetectors”, presented at the 24th Workshop on Compound

Semiconductor

24. Joe C. Campbell, Shuling Wang, X.G. Xheng, G.S. Kinsey, A.L. Holmes, Jr., X.Sun, R. Shidu,

and P.Yuan, “Ultra-Low Noise Avalanche Photodiodes”, presented at Physics and Simulation of

Optoelectronic Devices IX, San Jose, CA, USA, 22-26 January 2001.

25. Sridhar Govindaraju and Archie L. Holmes, Jr., “Growth and Characterization of

Ga0.8In0.2(N)As Quantum Wells with GaNxAs1-x (x 0.05) barriers by Plasma-Assisted

Archie Holmes, Jr.

Page 22

MBE”, presented at the 20th Annual North American Molecular Beam Epitaxy Conference,

Providence, RI, October 2001.

26. Archie L. Holmes, Jr., R.P. Mirin, Y.J. Chiu, S.P. DenBaars, and J.E. Bowers, "1.55 Micron

In-Plane Lasers with p-Al0.7Ga0.3As Cladding Layers", oral presentation, LEOS 1997, paper

TuQ4, San Francisco, CA., November 1997.A.L. Holmes, M.E. Heimbuch, , C.M. Reaves, S.P.

DenBaars, and L.A. Coldren, "Strained and Unstrained InxGa1-xAs/InP and

InxGa1-xAsyP1-y/InP Quantum Well grown by Non-Hydride MOCVD with TBA and TBP,"

oral presentation, Electronic Materials Conference, Santa Barbara CA, June 1993.

28. S. Wang, X. Sun, X.G. Zheng, A.L. Holmes, Jr., J.C. Campbell, and P. Yuan, “Avalanche

photodiodes with an impact-ionization-engineered multiplication region”, presented at the Lasers

and Electro-Optics Society 2000 Annual Meeting, paper MA1

29. J.C. Campbell, H. Nie, C. Lenox, P. Yuan, A.L. Holmes, Jr., B.G. Streetman, “High-speed, low-

noise avalanche photodiodes”, oral presentation, Optical Fiber Communication Conference,

Baltimore, MD, 2000.

30. H. Htoon, D. Kulik, W. Wasick, C.K. Shih, O. Baklenov, A.L. Holmes, Jr., “Structure of Excited

States and Quantum DeCoherence in Self-Assembled Semiconductor Quantum Dots”, oral

presentation, Fall 2000 MRS Conference, paper J5.7, Boston, MA, November 2000.

31. X.-D. Wang, N. Liu, C.K. Shih, S. Govindaraju, A.L. Holmes, Jr., “Interlayer Spatial Correlations

in Self-Assembled Quantum Dots: A Scanning Probe Microscopy Study”, oral presentation, Fall

2000 MRS Conference, paper J6.9, Boston, MA, November 2000.

32. Sridhar Govindaraju, Rubin Shidu, and A.L. Holmes, Jr., “MEE-Grown InGaAs Quantum Dots

Embedded in an InxGa1-xAs (x 0.2) Matrix for 1.3 m emission”, oral presentation, Fall 2000

MRS Conference, paper J9.8, Boston, MA, November 2000.

33. S. Wang, X. Sun, X.G. Zheng, A. Holmes, Jr, J. Campbell, P. Yuan, “Avalanche Photodiodes

with an Impact-Ionization-Engineered Multiplication Region”, oral presentation, LEOS 2000,

paper MA1, Rio Grande, Puerto Rico, November 2000.

34. G. Kinsey, D. Gotthold, A. Holmes, and J. Campbell, “GaNAs Avalanche Photodiodes Operating

at 1.064 m”, oral presentation, LEOS 2000, paper MA3, Rio Grande, Puerto Rico, November

2000.

35. David W. Gotthold, Sridhar Govindaraju, Archie L. Holmes, Jr, and Ben G. Streetman, “Growth

of GaInNAs by Plasma Assisted Molecular Beam Epitaxy”, presented at the Spring 2000 MRS

Conference, San Francisco, CA, April 1999.

36. Ning Liu, Chih-Kang Shih, Oleg Baklenov, Archie L. Holmes Jr., "Cross-sectional Scanning

Tunneling Microscopy Studies of Size, Shape, Strain, and Composition Profile of Self-

Assembled InGaAs Quantum Dots", Talk I3.6 presented at the Fall 1999 MRS Conference,

November 29 - December 3, 1999, Boston.

37. H. Htoon, Hongbin Yu, D. Kulik, J. Keto, C.K. Shih. O. Baklenov, and A.L. Holmes Jr., "Nano-

photoluminescence studies of self-assembled quantum dots”, Poster I7.27 presented at the Fall

1999 MRS Conference, November 29 - December 3, 1999, Boston.

38. N. Liu, C. K. Shih, O. Baklenov, A. L. Holmes Jr., "Size, Shape, Composition Inhomogeneities

of In0.5Ga0.5As QDs Grown by Migration Enhanced Epitaxy", The 46th International Symposium

and Topical Conferences of the American Vacuum Society, October 25-29, 1999, Seattle,

Washington.

39. N. Liu, C. K. Shih, O. Baklenov, A. L. Holmes Jr., B. G. Streetman, "Cross-sectional Scanning

tunneling microscopy study of InGaAs/GaAs quantum dots grown by migration Enhanced

Archie Holmes, Jr.

Page 23

epitaxy", Centennial Meeting of The American Physical Society, March 20-26, 1999, Atlanta,

Georgia.

40. N. Liu, C. K. Shih, O. Baklenov, A. L. Holmes Jr., and B. G. Streetman, "Cross-sectional

Scanning tunneling microscopy study of In0.5Ga0.5As/GaAs quantum dots grown by Migration

enhanced epitaxy", 26th Conference on the Physics and Chemistry of Semiconductor Interfaces,

January 17-21, 1999, San Diego, California.

41. H. Htoon, D. Kulik, W. Wasicek, J. W. Keto, O. Baklenov, A. L Holmes Jr. and C. K.

Shih,"Cross-sectional Nano-Photoluminescence Studies of Self Assembled Quanutm Dots." ,

APS March Meeting, Minneapolis (2000)

42. H. Htoon, Hongbin Yu, D. Kulik, J. W. Keto, O. Baklenov, A. L Holmes Jr. and C. K. Shih,

"Nanoscopic Spectroscopy of Self-Assembled Quantum Dot:Inter-Dot Population Shuffling and

its Effects on Many-Body States", APS Centennial Meeting, Atlanta (1999).

43. P. Yuan, O. Baklenov, H. Nie, A.L. Holmes, Jr., B.G. Streetman, and J.C. Campbell, "High

Speed Quantum-Dot Resonant-Cavity SACM Avalanche Photodiodes Operating at 1.06 m",

presented at the Device Research Conference, Santa Barbara, CA, June 1999.

44. P. Yuan, O. Baklenov, H. Nie, A.L. Holmes, B.G. Streetman, and J.C. Campbell, “High-Speed

quantum-dot resonant-cavity SACM avalanche photodiodes operating at 1.06 m”, presented at

the 1999 LEOS Summer Topical Meetings.

45. J.C. Campbell, A.L. Holmes, Jr., and R.D. Dupuis, “Ultra low-noise avalanche Photodetectors

and AlxGa1-xN/GaN photodetectors”, presented at the 24th Workshop on Compound

Semiconductor Devices and Integrated Circuits, Aegean Sea, Greece, May 2000.

46. H. Nie, C. Lenox, G. Kinsey, P. Yuan, A. L. Holmes, B. G. Streetman, and J. C. Campbell, "High

speed and high gain-bandwidth-product resonant-cavity InGaAs/InAlAs avalanche photodiodes",

Optical Fiber Conference, San Diego, CA, 1999.

47. H. Nie, C. Lenox, G. Kinsey, P. Yaun, A.L. Holmes, Jr., B.G. Streetman, J.C. Campbell,

"Resonant-Cavity InGaAs/InAlAs Separate Absorption, Charge, Multiplication Avalanche

Photodiodes", oral presentation, LEOS 1998, paper TuJ4, Orlando, FL., December 1998.

48. C. Lenox, H. Nie, P. Yuan, G. Kinsey, C. Hansing, J.C. Campbell, A.L. Holmes, Jr., B.G.

Streetman, “Thin Multiplication-Region InAlAs Homojunction Avalanche Photodiodes Grown

on InP by MBE,” 40th Electronic Materials Conference, paper G7, Charlottesville, Virginia, June

24-26, 1998.

49. J.M. Reifsnider, D.W. Gotthold, A.L. Holmes, Jr., B.G. Streetman, "Improved Quality of GaN

Films Grown by MBE on Sapphire", 16th North American Molecular Beam Epitaxy Conference,

paper I.3, Ann Arbor, MI., 1997.

50. C. Lenox, H. Nie, P. Yuan, G. Kinsey, C. Hansing, J.C. Campbell, A.L. Holmes, Jr., B.G.

Streetman, “Growth of In0.53(AlxGa1-x)0.47As Avalanche Photodiodes on InP by MBE,” accepted

for presentation at the 17th North American Conference on Molecular Beam Epitaxy, University

Park, Pennsylvania, October 4-7, 1998.

51. O. Baklenov, H. Nie, A. Holmes Jr., J. Campbell, B. Streetman, "Long-wavelength luminescence

from In0.5Ga0.5As/GaAs Quantum Dots grown by Migration Enhanced Epitaxy" accepted for

presentation at the 17th North American Conference on Molecular Beam Epitaxy, University

Park, Pennsylvania, October 4-7, 1998.

52. S.P. DenBaars, A.L. Holmes, Jr., M.E. Heimbuch, , and C.M. Reaves, "Low Threshold Strained

InxGa1-xAsyP1-y/InP Quantum Well Lasers Grown with TBA and TBP," oral presentation, Fifth

European Workshop on MOVPE, Malmo, Sweden, June 1993.

Archie Holmes, Jr.

Page 24

53. M.E. Heimbuch, A.L. Holmes, Jr., C.M. Reaves, M.P. Mack, S.P. DenBaars, and L.A. Coldren,

"Tertiarybutylarsine (TBA) and Tertiarybutylphosphine (TBP) for the MOCVD Growth of Low

Threshold 1.55 µm InxGa1-xAs/InP Quantum Well Lasers," oral presentation, Organometallic

Vapor Phase Epitaxy Workshop, Palm Springs, CA, United States, March 1993.

54. I-H. Tan, C. Reaves, J.J. Dudley, A.L. Holmes, D.I. Babic, E.L. Hu, J.E. Bowers, and S.P.

DenBaars, "Low-Temperature Pd Direct Bonding and Electrical Transport Across InP-Pd-GaAs

Interfaces," oral presentation, Sixth International Conference on Indium Phosphide and Related

Materials, Santa Barbara CA, United States, March 27-31 (1994).

55. D.A. Tauber, R. Spickermann, R. Nagarajan, T. Reynolds, A.L. Holmes, Jr., and J.E. Bowers,

"Distributed Microwave Effects in High Speed Semiconductor Lasers", oral presentation, IEEE

MTT-S International Microwave Symposium Digest, paper TU1C-1, San Diego, CA, May 22-28

(1994).

56. R. Nagarajan, R. Yu, T. Reynolds, A. Holmes, J.E. Bowers, and Steve DenBaars, "Cryogenic

Microwave Optical Sources", Invited Paper, Engineering Foundation Third Conference on High

Speed Optoelectronic Devices for Communications and Interconnects, San Luis Obispo, CA,

August 14-18 (1994).


"Microwave Propagation Effects in Directly Modulated Semiconductor Lasers", oral

presentation, GOMAC '94 (Government Microcircuits Applications Conference), San Diego, CA,

November 7-10 (1994).

58. R. Yu, R. Nagarajan, T. Reynolds, A. Holmes, and J.E. Bowers, "An Ultrahigh Speed Cryogenic

Optical Fiber Link", oral presentation, CLEO 1994, paper CThJ2, Anaheim, CA, May 8-13

(1994).


"Inherent Bandwidth Limits in Semiconductor Lasers due to Distributed Microwave Effects", oral

presentation, CLEO 1994, paper CThB3, Anaheim, CA, May 8-13 (1994).

60. Monique S. Gaffney, Roy S. Smith, Archie L. Holmes, Jr., Casper M. Reaves, and Steven P.

DenBaars, "Improved Composition and Thickness Control of III-V Epitaxy in a Metalorganic

Chemical Vapor Deposition Process", 34th IEEE Conference on Decision and Control (1995).

61. Monique S. Gaffney, Casper M. Reaves, Roy S. Smith, Archie L. Holmes, Jr., Steven P.

DenBaars, "Composition Control in a Metalorganic Chemical Vapor Deposition Process", 13th

World Congress IFAC (1996).

62. M.S. Gaffney, C.M. Reaves, R.S. Smith, A.L. Holmes, Jr., and S.P. DenBaars, "Real-time

Composition Control Techniques in a Metalorganic Chemical Vapor Deposition Process",

Materials Research Society Symposium Proceedings 406, Pittsburgh, PA, 1995.

63. D.G. Yu, C.-H. Chen, A.L. Holmes, Jr., S.P. DenBaars, and E.L. Hu, “A Comparison of Ion

Damage in GaAs and InP”, presented to Micro and NanoEngineering 1996.

64. D. Tauber, M. Horita, A.L. Holmes, Jr., B.I. Miller, J. Piprek, and J.E. Bowers, “InGaAsP Metal

Fused Microstrip Laser”, Engineering Foundation High Speed Optoelectronics Conference,

Devices and Systems, Snowbird, Utah, August 1996.

65. M. Horita, D.A. Tauber, A.L. Holmes, Jr., B.I. Miller, and J.E. Bowers, “Metal Fused Microstrip

InGaAsP/InP MQW Lasers”, Technical Report of the Institute of Electronics, Information, and

Communications Engineers, ED96-70, OPE96-36, LQE96-38, p. 19, Tokyo, Japan, July 1996

66. D. Tauber, M. Horita, A.L. Holmes, Jr., B.I. Miller, and J.E. Bowers, “The Microstrip Laser”,

Proceedings of the Integrated Photonics Research Conference, Boston, MA, April 1996.

Archie Holmes, Jr.

Page 25

GRADUATE STUDENT RESEARCH

Dissertations Completed Under Faculty Member's Supervision


1. Oleg Baklenov (Electrical and Computer Engineering)

2. David Gotthold (Materials Science and Engineering), joint with Ben Streetman

3. Jason Reifsnider (Electrical and Computer Engineering)

4. Sridhar Govindaraju (Materials Science and Engineering)

5. Xiaoguang Sun (Electrical and Computer Engineering)

6. Rubin Shidu (Electrical and Computer Engineering)

7. Mike Oye (Materials Science and Engineering)

8. Jeff Hurst (Electrical and Computer Engineering)

The University of Virginia

1. Baile Chen (Electrical and Computer Engineering)

Theses/Reports Completed Under Faculty Member's Supervision


1. Katie Lipson (Electrical and Computer Engineering)

2. Sam Lipson (Electrical and Computer Engineering)

References: Available upon request

Documents

Archie L. Holmes, Jr.taxonomy.engin.umich.edu/wp-content/uploads/2013/02/CV...2013/02/22 · Course ECE 200: Science of Information Course Type 200-level (second-year) Enrollment