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A/Prof. C. Tripon-CanselietUPMC - Université Pierre et Marie Curie – Electronics and Electromagnetism Lab (L2E) - France
In cooperation with THALES Airborne Systems - France IEMN- Electronics , Micro and Nanotechnologies Institute – FranceNanyang Technological University/CINTRA – Singapore
Ultrafast sensors
For the Future
Ultrafast sensors for the Future
C. T
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Optics metrology for electronics: specific needs for industrial applications
o Electronics technological bottleneck: high frequency activation and functionality
– Electronics/Electronics: DC to microwave domain– Optics/Optics: Terahertz domain– Optics/Electronics: Microwave to sub-mm range
o Optics for classical electronic clock jitter limitations overcoming– Optical laser sources: highest resolution for electronic systems– Semiconductor technological procees: Integration access
o Optics for ultra short pulse bandwith generation– Femtosecond risetime– Speed of light – Few tens to hundred fs time bandwidth: Highest external control frequency
Demonstration of optics in RF electronic systems: Active research fieldo Ligth/matter interactionso Integration of optics for microwave fucntionalitieso Nanotechnologies for improvment
Introduction
Introduction PC effect RF carrier generation RF magnitude switching RF phase shifting RF amplificationResearch strategy
Ultrafast sensors for the Future
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Identified efficient RF functunalities for industrial applications: State-of-the-Art in microwave photonics
All optical signal processing Beam scanning of antennas arrays (True Time Delays) Very low noise generation (by signal injection) Radio over Fiber (RoF) systems (high data rates > 100 Gbits/s)
Technological support for systems integrationBuilding blocks
Sources (Lasers, LEDs) Receivers (Photodiodes, photo transistors) RF information transport on optical carriers (AM/PM/FM) Information support (Optical waveguides)
Physical limitations scanning: Why not Nanoscale?o Confinement of light/matter interactions with diffraction effectso Nanotechnology platform access
Introduction
Guided space
Micro integration
Free space
Nano integration ?
Introduction PC effect RF carrier generation RF magnitude switching RF phase shifting RF amplificationResearch strategy
Ultrafast sensors for the Future
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One example among others: High frequency sampling George Valley chart
« Three Ten law »: 10 GHz – 10 fs – 10 Bits
Introduction
Jitter
Opening time
Time
Sampling pulses
Openinguncertainty
V
Optical clock need
nsf
t22..2
1
Introduction PC effect RF carrier generation RF magnitude switching RF phase shifting RF amplificationResearch strategy
Ultrafast sensors for the Future
C. T
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Ligth/Matter interactions inventory: How we can play with light…. Light emission (Photoluminescence, Electroluminescence) Light Absorption Light scattering
Rayleigh scattering Brillouin scattering Raman scattering
Optical rotation
Case of bulk materials
Introduction
Bulk materials Dielectrics Semiconductors Metals
Reflection
Refraction Electro-optics (1st/2nd orders)Acousto-optics
Electro-absorption
Absorption Photoconductive effectPhotovoltaïc effect
Plasmonics
Diffraction Wave mixing Grating Grating
Critical parametersAnisotropy of mediaPolarisation state of light
Introduction PC effect RF carrier generation RF magnitude switching RF phase shifting RF amplificationResearch strategy
Ultrafast sensors for the Future
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Photoconductive effect description Photoconductivity of semiconconductor materials (GaAs, GaAs BT)
Generation of electron/hole pairs: Material conductivity enhancementLocal photoresistance
Semiconducting materials familyEnergy band gapAbsorption coeffcient( ~104 cm-1)Carriers dynamicsResistivity
Optical commandTime domain shapeSource compactnesswaveguide
Introduction
1.24
optgE eV
InP:Fe
Si
CW o
ptica
lcon
trol
GaAs
CW t
o ul
traf
ast
optic
alco
ntro
l
InGaAs
LTG - GaAs
GaAs:Cr
λ
GaAsSbN (% x)
SW CNTGaAs NW
Introduction PC effect RF carrier generation RF magnitude switching RF phase shifting RF amplificationResearch strategy
Ultrafast sensors for the Future
C. T
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Nano material-based microwave devices under optical control for next generation of EM sensors
Material and components approach :Physics, design, simulation, modeling
New semiconductors Carbon nanotubes Semiconductor Nanowires Metal/dielectric or Metal/semiconductor interfaces
Devices and functions approach Physics, design, simulation, modeling
Modulation by SPP generation Nano RF magnitude switching Nano RF beam scanning by nano antennas (RF au THz)
Characterization
Characterization
Associated signal processing functions
Research strategy
Introduction PC effect RF carrier generation RF magnitude switching RF phase shifting RF amplification
Ultrafast sensors for the Future
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Microwave photonic characterization platform (UPMC) Frequency and transient measurements (DC – 67 GHz) CW laser sources (0.8 – 1.3 and 1.55 µm) Femtosecond fibered and tunable laser source
(0.8 and 1.55 µm) Probe test environnement setup under specific thermal conditions
Electrical and electromagnetic multiscale and multiphysic Design platform (UPMC)
Photoconductive effect homemade transient modeling in ADS software– Carriers time varying density equivalent electrical modeling– Associated time varying photoresistance
Optical command characteristics power, spot size, wavelengthCarriers dynamics (mobilities and lifetimes)Semiconducting material dark resistivity
– Microwave circuit transient and frequency (after FFT) behaviour in microwave domain Photoconductive effect design tool in 3D electromagnetic software
Research strategy
Introduction PC effect RF carrier generation RF magnitude switching RF phase shifting RF amplification
Ultrafast sensors for the Future
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Actions plan (2008 – 2013)
Research strategy
Nano RF engineering
Architecture Design
Bulk materials
GaAs, GaAs BT (0.8 µm)GaAs Sb (1 µm)
GaAsSbN (1.55 µm)
Thrust 1
Classical RF engineering
Architecture Design
Nano materialsstudy
Nanowires (GaAs)SW and MW Nanotubes (C)
Surface effects (SPP)
Thrust 2
Nano RF engineering
Architecture Design
Nano materialsimplementation
Nanowires (GaAs)SW and MW Nanotubes (C)
Thrust 3
Carriers dynamics (Mobiliies, lifetimes)Dark resisitivityCarriers transport (balisitc regime)Integration with MMIC planar technology(Process or deposition methods eligibility)
Nano electromagnetism under infinite boundaries(Limitations of classical electromagnetics)Feasibilty of transmission of RF signals in nano accessInterconnections
Limitations under finite boundariesArrays functionalities – DensificationNanoscale coupling effects
Introduction PC effect RF carrier generation RF magnitude switching RF phase shifting RF amplification
Ultrafast sensors for the Future
C. T
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Photoconductive effect homemade modelling (1/2) Microwave signal processing by optics
Carrier density evolution in time under time-varying optical illumination
Photoconductive effect
Optical signal transient shape (magnitude, frequency modulation)Microwave switch dimensions (integrated technology)
Output parameters
Time domain photoresistance Rg(t)Input parameters
S-parameters (Fourier transform)
Substrate permittivity loss angle height carriers mobility + carriers lifetime + doping
Substrate parameters
Introduction PC effect RF carrier generation RF magnitude switching RF phase shifting RF amplification
Ultrafast sensors for the Future
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Photoconductive effect homemade modelling (2/2) Non linear electical modelling: Real-time control of microwave signals by
optics
fmod= 1 GHz
Car
riers
den
sitie
s (/
cm3 )
fRF = 10 GHz - fmod= 1 GHz Δτ = 50 ps
Demonstration of modulation signal carrier transfert from optics to microwave carrier
Photoconductive effect
Research strategyIntroduction PC effect RF carrier generation RF magnitude switching RF phase shifting RF amplification
Time (ns)
RF output signal
RF input signal
Time (ns)
Ultrafast sensors for the Future
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Photoconductive effect in microwave circuit: classical behaviour in microwave domain Integration in a microwave circuit with line discontinuity
Magnitude switching / Phase shifting (high pass filter behaviour)
Microwave functionalities demonstration Modulation transfer Ultrafast sampling
Digital coding with high data rate and Bits resolution access
Ultrafast clock trigerring thanks to very low jitter optical source Generation
Integration in MMIC ascillator on standard GaAs substrate
Side view of microwave photoconductive switch
ON / OFFi21ON / OFF ON / OFF
21
S ONR e
S OFF
Associated RF efficiency
Photoconductive effect
Research strategyIntroduction PC effect RF carrier generation RF magnitude switching RF phase shifting RF amplification
Ultrafast sensors for the Future
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Photoconductive effect for 5 GHz carrier generation Integration in MMIC ascillator on standard GaAs substrate
Measured transient Optically generated microwave carrier at a
frequency of 5GHz
MMIC top view (UMS PH25 foundry process)
Oscillator tuned spectrums obtained by triangular modulation of incident optical power
(fmod 50 KHz, λ = 800 nm,)(1) 0–80 mW, (2) 0–130 mW and (3) 0–180 mW
S. Faci, C. Tripon-Canseliet, A. Benlarbi-Delaï, G. Alquié, S. Formont, , J. Chazelas“Optical generation of microwave signal for FMCW radar applications”, Microwave and optical Technology Letters, Vol 51, Issue3, pp.690-693, March 2009
S. Faci, C. Tripon-Canseliet, G. Alquié, S. Formont, , J. Chazelas“Ook modulator using photoconductive feedback oscillator”Microwave and optical Technology Letters, Vol 52, Issue 9, pp.2010-2016, Sept 2010
Microwave carrier generation by optics
Research strategyIntroduction RF carrier generation RF magnitude switching RF phase shifting RF amplificationPC effect
Ultrafast sensors for the Future
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Photoconductive effect for 5 GHz carrier generation Ultrafast pulse illumination: Real-time control of microwave carrier
generation by optics
S. Faci, C. Tripon-Canseliet, A. Benlarbi-Delaï, G. Alquié, S. Formont, , J. Chazelas“Optical generation of microwave signal for FMCW radar applications”, Microwave and optical Technology Letters, Vol 51, Issue3, pp.690-693, March 2009
S. Faci, C. Tripon-Canseliet, G. Alquié, S. Formont, , J. Chazelas“Ook modulator using photoconductive feedback oscillator”Microwave and optical Technology Letters, Vol 52, Issue 9, pp.2010-2016, Sept 2010
MMIC top view (UMS PH25 foundry process)
Experimental results @ 5 GHz
Optional tunability by DC bias
RF signal setting time (50 ps)
RF signal time window
Optional tunability by optics
RF signal frequency
RF signal time window period
RF transient output (1ns/div)
RF transient output (200 ps/div)
Microwave carrier generation by optics
Research strategyIntroduction RF carrier generation RF magnitude switching RF phase shifting RF amplificationPC effect
Ultrafast sensors for the Future
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Photoconductive effect for ULB signal generation and emission Integration in a microwave circuit: Microwave functionalities demonstration
UWB signal generation by ultrafast optical control with optically-controlled signal waveform shaping
Experimental setup for optically-controlled UWB emitting system
Simulated and measured reflection coefficient of the UWB antenna Guldner, N.; Tripon-Canseliet, Faci, S., C.; Alquie, G.
“Optically-controlled UWB emission system” IEEE Microwave Conference, 2009 (EuMC), 2009, Page(s): 1916 - 1919
Transfer function of the system
Transient response of the emission antenna
Experimental UWB photogenerated signal
Microwave carrier generation by optics
Research strategyIntroduction RF carrier generation RF magnitude switching RF phase shifting RF amplificationPC effect
Ultrafast sensors for the Future
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ON/OFF ratio enhancement under CW illumination: Confinement intensification
Membrane material RF circuit mismatching (at OFF state)
Technology
On/Off ratio magnitude [dB]
@ 10 GHz @ 20 GHZ @ 40 GHz
Standard 1.45 0.45 0.04
Membrane 4.24 3.18 2.94
C. Tripon-Canseliet, S. Faci, K. Blary, G. Alquié, S. Formont, J. Chazelas
SPIE International Conference on Application of photonic Technology, Quebec, Canada, June 2006
Interaction volume: 20x20x2 µm3
Technology
On/Off ratio magnitude [dB]
@ 10 GHz @ 20 GHZ @ 40 GHz
RF confined 14.4 10.5 6.5
RF Confined 35.1 19.0 17.3
Interaction volume: 1x1x0.5 µm3
Carriers density increase Capacitive behaviour lowering Optimization of RF access design
DGA contract n° 07.34.014 (2007-2010)Partners: IEMN and THALES Airborne Systems
Microwave magnitude switching by optics
Research strategyIntroduction RF magnitude switching RF phase shifting RF amplificationPC effect RF carrier generation
Ultrafast sensors for the Future
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ON/OFF ratio enhancement under CW illumination: Confinement intensification
Nanotechnology-based MPCS @ 0.8 µm
Dielectric nano waveguide implementation
Active area dimensions R ON/OFF@ 20 GHz [dB]
R ON/OFF@ 40 GHz [dB]
1 x 1 x 0.5 µm3 (P1)(P2)
0.22.41
0.010.54
0.5 x 1 x 0.5 µm3 (P1)(P2)
0.175.13
0.281.55
0.3 x 1 x 0.5 µm3(P1)(P2)
1.598.65
0.233.13
Microwave magnitude switching by optics
Metal
GaAs standard
SiO2
Si3N4
Si, SiGe, GaAs nanowires implementation
IlluminationR = 40 µm, de = 2 µm
Nano-Wire
Air gap
GaAs substrate
Line
Line
Optical incident power[mW]
Resistivity[Ω.cm]
Conductivity[S.m-1]
0 1,13E+04 8,84E-034.3 5,84E+01 1,71E+007.7 7,60E+00 1,32E+0110 7,26E+00 1,38E+01
Experimental values of a SI GaAs photoconductivity under 0.8µm optical illumination
2009 MERLION program (French Embassy @ Singapore)– Nw-based electronicsPartnership: IEMN- UPMC- NTU
0.5 µm
Research strategyIntroduction RF magnitude switching RF phase shifting RF amplificationPC effect RF carrier generation
Ultrafast sensors for the Future
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Nanotechnology-based MPCS @ 1.55µm: Quaternary semiconducting material buk material
Study of photoconductivity of quaternary semiconductors (GaAsSbN) Design and tests of optically-controlled microwave switches
Experimental magnitude ON/OFF ratio @ 1.55 µm in frequency
2008 MERLION program (French Embassy) grantGaAsSbN process for optoelectronicsPartnership: IEMN-UPMC- NTU
K.H. Tan, C. Tripon-Canseliet, S. Faci, A.Pagies, M. Zegaoui, W. K.Loke, S. Wicaksono, S. F. Yoon , V. Magnin, D. Decoster, and J. Chazelas, IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 22, NO. 15, AUGUST 1, 2010
K. H. Tan, S. F. Yoon, C. Tripon-Canseliet, W. K. Loke, S. Wicaksono, S. Faci, N. Saadsaoud, J. F. Lampin, D. Decoster, and J. Chazelas, APPLIED PHYSICS LETTERS 93, 063509 2008
Carrier lifetime measurement @ 1.2 -1.55 µmMPCS substrate structure
2010ANR/ A star joined program grant novel dilute nitride III-V Compound sEmiconductoR for 1550nm
Ultra-Fast PhotoconductIve SwitchE (CERISE)Partnership: IEMN-UPMC – THALES - NTU
Microwave magnitude switching by optics
Research strategyIntroduction RF magnitude switching RF phase shifting RF amplificationPC effect RF carrier generation
Ultrafast sensors for the Future
C. T
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Nanotechnology-based MPCS @ 1.55µm: CNT-based technology Modeling and characterization of RF behaviour of MW or metallic SW CNTs Study of photoconductivity of semiconducting SW CNTs under polarized Design and test of CNT-based RF nano emitters Design and tests of optically-controlled microwave phase shifters
2010 DGA/DSTA joined program grantNano antennasPartnership: IEMN-UPMC – THALES - NTU
Microwave phase shifting by optics
A. Maiti, Caron Nanotubes: Band gap engineering with strain, Nature Materials 2 (2003) 440
C Cgap
CNT
t aE
d
J. Guo, M. A. Alam, Y. Yoon, Appl. Phys. Lett. 88, 133111 (2006).
SEM photograph of vertical MW CNT processed by PECVD @ NTU
CNT
Examples of RF reflective (a) and filtering (b) structures for CNT RF properties extraction
Research strategyIntroduction RF phase shifting RF amplificationPC effect RF carrier generation RF magnitude switching
Ultrafast sensors for the Future
C. T
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Research work focus (since 2007): Nanotechnology-based emitting system @ 1.55µm
Study of photoconductice of SW CNT-based FET with transparent electrodes (ITO) Design and tests of optically-controlled microwave amplifier with reported matching
circuit in hybrid technology
20
Microwave amplification by optics
2010 ANR program grantMicrowave Optically-Controlled Cnt-based emitting ArchitecturePartnership: IEMN-UPMC – THALES - NTU
Nano RF amplifier
S SDG G
aligned SW N Ts
Pd layer
H igh-k
SiO 2
H igh-resistiv ity S i substrate
Laser excitation
Active quadripole
Research strategyIntroduction RF amplificationPC effect RF carrier generation RF magnitude switching RF phase shifting
Ultrafast sensors for the Future
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Eligibility by experimental demonstration of nano material efficiency in dynamic regime
o Nano wires/tubesl arrayso Nano ribbons/cristals/shells
Extension of existing modeling and design tools to mutliscale components and devices
Prospect new technological process/deposition methodsto open access to low cost components fabrication
Optimization of existing nano materials integration for microwave photonic purposes
o Electronic accesso Light interaction effects (plasmonics)
Prospects
M. S. Islam, N. P. Kobayashi, S-Y. Huang
2008 2nd IEEE International Nanoelectronics Conference (INEC 2008), p.1009-1014
Research strategyIntroduction RF amplificationPC effect RF carrier generation RF magnitude switching RF phase shifting
Ultrafast sensors for the Future
C. T
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Collaboratorso G. Alquié (L2E)o D. Decoster (IEMN) - Professoro J. Chazelas (THALES) – Technical Directoro K.L. Pey (NTU previously - now @SUTD) - Professoro Yoon S.F. - Tay B. K (NTU/EEE school) - Professorso D. Baillargeat (CINTRA) - Professor
PhD students and Post Docs o S. Faci – K. Louertani - N. Guldner – B. Guillot (L2E)o N. Saassaoud / M. Zegaoui / A. Pagies/ (IEMN)o A. Olivier (CINTRA/IEMN)o Teo E. – Tan D.
22
Thank you for your attention
Acknowledgments
Mimicking the Human being
Nanotechnologies
Ultrafast sensors for the Future
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Trust 1 : Study of metallic/semiconducting interfacesDGA contract n°08.108.38 - Partners: IEMN – Thales Research and Technology
Solution for confinement of light for RF modulation of optical carriers
Design, fabrication and characterization of a fully-integrated device
θr
nd + ΔnR
ΔR
Δn(V) = nd cos(mt)
θ
n
d ki
kr
ktEt
Ei Er
kx
θi
θt
z
x
n1
n2
Prism
Metal
Dielectric
Prism
Metal
Dielectric
Incident beam
Attenuated beam
Incident beam
Surface plasmon
Kretschmann configuration Otto configuration
Research actions plan
Ultrafast sensors for the Future
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Nanotechnologies: performances attendues Propriétés électriques
Résistivité/conductivité, résistance de contact avec différents métaux
Propriétés électroniques Transport / Dynamique des électrons (mobilités, vitesse de transit, temps de vie)
Propriétés optiques Structure de bande / Sensibilité en longueur d’onde (Bande spectrale d’absorption)
Propriétés thermiques Propriétés mécaniques Techniques de fabrication
Nano objets: vers des propriétés surprenantes
Propriétés des CNTs compoarées aux matériaux semiconducteurs connus
P. Avouris, M. Radosavljevic, S. J. Wind, CNT electronics and optoelectronics, NanoScience and Technology, Applied Physics of Carbon Nanotubes, Fundamentals of Theory, ISBN 978-3-540-23110-3
Résisitivté de nanofils d’InN – Résistivité avec et sans résistance de contact (Méthode à 4 pointes en noir)
F. Werner, F. Limbach, M. Carsten, C. Denker, J.Malindretos, A. Rizzi,Nano Lett., Vol. 9, No. 4, 2009
Ultrafast sensors for the Future
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Nanofils: Méthodes de fabrication pour composants électroniques et optoélectroniques
Structures homogènes Jonctions PN Transistors
FETMOSFET
Nano engineering Approche « Bottom-up »: croissance catalysée Approche « Top-down »: gravure verticale
Mise en réseau de nanobjets
Nano objets: Propriétés optoélectroniques
Y. Li, F. Qian, J. Xiang, and C. M. LieberMaterialsToday, Oct. 2006, 9, 10
Ultrafast sensors for the Future
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Exemple de nanofils d’InP Caractérisation optique: Electroluminescence
Nano objets: Propriétés optoélectroniques
X. Duan, Y. Huang*², Y.Cui, J.Wang*& C.M. Lieber, Nature, 409, Jan 2001, p.66-68
5 µmp-n junction
Diam: 65 et 68 nm
5 µm
Diam: 39 et 49 nm
Ultrafast sensors for the Future
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Exemple de nanofils de Si Caractérisation optique : photoluminescence
Nano objets: Propriétés optoélectroniques
M.-H. Kim , T.-E. Park, U.-K. Kim, H.-J. Choi, G.-Y. Sung, J.- H. Shin, K. Suh2007 4th IEEE International Conference on group IV Photonics, Page(s): 1 - 3
Th Stelzner, M Pietsch, G Andra, F Falk, E Ose and S Christiansen
Nanotechnology 19 (2008) 295203
Ultrafast sensors for the Future
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Nanofils hétérostructurés (GaAs/GaP) Caractérisation statique I(V) et optique (électroluminescence)
Nano objets: Propriétés optoélectroniques
Gudiksen, M., et al.,
Nature (2002) 415, 617
Wu, Y., et al.,
Nature (2004) 430, 61
Ultrafast sensors for the Future
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Nanofils hétérostructurés (GaN/InGaN/GaN/AlGaN/GaN) Caractérisation statique I(V) et optique (électroluminescence)
Nano objets: Propriétés optoélectroniques
Qian, F., et al., Nano Lett. (2005) 5, 2287
Ultrafast sensors for the Future
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Nanotubes de Carbone Propriétés optoélectroniques
Jonctions PN: Electroluminescence
Nano objets: Propriétés optoélectroniques
Chen, J., et al., Science (2005) 310, 1171
Ultrafast sensors for the Future
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Nanotubes de Carbone Représentation par un enroulement d’une feuille de graphène (arrangement 2D
d’atomes de Carbone) Nature métallique ou semiconductrice déterminée par
Diamètre Type d’enroulement (mono/multi paroi) Chiralité
Propriétés électroniques Mobilités Résistivité
Nano objets: Propriétés optoélectroniques
Fig.2: Pictorial representation of (A) graphene sheet and (B) rolled carbon nanotube lattice structures (the
latter shows a (16,0) tube). Fig. 3: CNT energy gap and intrinsic doping ni
as a function of tube radius
C Cgap
CNT
t aE
d
(1)
Ultrafast sensors for the Future
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Nanotubes de Carbone Propriétés optoélectroniques
Photoconductivité: Dépendance en polarisation
Nano objets: Propriétés optoélectroniques
X. Qiu, M. Freitag, V. Perebeinos, P. AvourisNano Lett. 5, 749 (2005).
J. Guo, M. A. Alam, Y. Yoon, Appl. Phys. Lett. 88, 133111 (2006).
Ultrafast sensors for the Future
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Nano objets : Synthèse Composants électroniques: Diodes, Transistors
Applications industrielles: circuits logiques (Mémoires) Composants optoélectroniques: LEDs, (Photodiodes PIN)
Applications industrielles: Ecrans
Nano objets: Propriétés optoélectroniques
Composants pour applications RF Utilisation des propriétés optiques
Nano dispositifs intégrés à contrôle optique
Ultrafast sensors for the Future
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Commande optique CW: Commutation d’amplitude Recherche du confinement de l’interaction
Augmentation de la densité de porteurs Diminution du comportement capacitif RF du dispositif
Premiers travaux effectués au L2E (2006) Structure membrane Augmentation de l’impédance des lignes d’accès: Réduction de la zone d’interaction
Dispositifs intégrés RF à contrôle optique
Technology
On/Off ratio magnitude [dB]
@ 10 GHz @ 20 GHZ @ 40 GHz
Standard 1.45 0.45 0.04
Membrane 4.24 3.18 2.94
C. Tripon-Canseliet, S. Faci, K. Blary, G. Alquié, S. Formont,
J. Chazelas
SPIE International Conference on Application of photonic Technology,
Quebec, Canada, Juin 2006
Ultrafast sensors for the Future
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Commande optique CW: Commutation d’amplitudeRecherche du confinement de l’interaction lumière/matière pour la commutation d’amplitude par l’optique
Réduction de la zone d’éclairement
Dispositifs intégrés RF à contrôle optique
Optical wavelength: 800 nm - Incident optical power: 5.3 mW
0
5
10
15
20
25
0 1 2 3 4 5 6 7 8 9 10
Frequency [GHz]
ON
OF
F r
ati
o [
dB
]
Classical fiber - 4.7 mW
Lensed fiber - 5.3 mW
Ultrafast sensors for the Future
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Exemple de nanofils d’InP Caractérisations statiques I(V)
Application à des jonctions croisées
Nano objets: Propriétés optoélectroniques
X. Duan, Y. Huang, Y.Cui, J.Wang& C.M. Lieber, Nature, 409, Jan 2001, p.66-68
10 mm
10 nm
Diam: 47 nm
1 mm
Ni/In/Au contacts
Diam: 45 nm
1 mm
Ni/In/Au contact electrodes
2 mm
Diam: 29 nmDiam: 40 nm
n-n
p-p
n-p
Ultrafast sensors for the Future
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Exemple de nanofils de Si Caractérisation statique de transistors à effet de champ
Nano objets: Propriétés optoélectroniques
H. Lu et Al, Nano Letters(2008), 8, 925
100 nm channel length
500 nm
Vds@-10 mV
J. Martinez, R.V. Martinez, R. Garcia, IEEE-NANO 2009. 9th IEEE Conference on Nanotechnologies, Page(s): 442 - 443
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Exemple de nanofils de Si (méthode top-down améliorée) Caractérisation statique I(V)
Nano objets: Propriétés optoélectroniques
Jing Zhuge; Yu Tian; Runsheng Wang; Ru Huang; Yiqun Wang; Baoqin Chen; Jia Liu; Xing Zhang; Yangyuan Wang;
IEEE Transactions on Nanotechnology, 9 , Issue 1, 2010, Page(s): 114 - 122
Ultrafast sensors for the Future
C. T
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Hybridation et mise en réseau de Nanofils (méthode Bottom-up) Caractérisation statique I(V)
Nano objets: Propriétés optoélectroniques
M. S. Islam, N. P. Kobayashi, S-Y. Huang
2008 2nd IEEE International Nanoelectronics Conference (INEC 2008), p.1009-1014