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External Use
External Use SILICON SYSTEMS GROUP
Applied Centura® Tetra™ EUV Mask Etch System
Silicon Systems Group Sept 19th, 2011
Enabling EUV Photomask Technology
External Use
Applied’s Innovations Enabling Inflections
Mesa™ Etch
UVision® 4 Brightfield Raider-S™ ECD
InVia™ CVD
Avila™ CVD
Tetra™ X
Aera3™
Centris™ Etch
Silvia™ Etch
Centinel™ PVD / ALD
Reflexion® GT™ for Cu
Raider ® GT
DFinder™ Inspection
Astra™ DSA Anneal
Siconi™ for Epi
Avenir™ RF PVD Gate
Eterna™ FCVD
Avenir™ RF PVD Ni
Conforma™ Doping
Reflexion® GT™ for W
Vantage Vulcan™ RTP
SIP™ Co PVD
Versa™ XLR PVD
Nanocure™ 3
Black Diamond® 3
DPN HD
Centura High-k ALD
Tetra™ EUV
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TRANSISTOR INTERCONNECT ADVANCED PATTERNING
WAFER-LEVEL PACKAGING
External Use
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The Photomask transfers a patterned image onto a wafer
External Use
External Use
SILICON SYSTEMS GROUP SILICON SYSTEMS GROUP 4
EUVL* Infrastructure Is Under Development
Source Discharge-Produced Plasma
Laser-Produced Plasma
Optics Reflective Optics
6 Projection Mirrors
Vacuum Contained
Photomask Mask Blank
Mask Etch Mask Clean
Ready for Scanner
Mask Write
Mask Inspect
Resist Incoming Wafer
Ready for Scanner
Resist Deposition
Pattern Transfer
Photomask etch is a critical technology for EUVL transition * EUVL = Extreme Ultra-Violet Lithography
M1
M2
M3
M4
M5 M6
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SILICON SYSTEMS GROUP SILICON SYSTEMS GROUP 5
* ARC = Anti-Reflective Coating
Conventional lithography Transmission photomask
4 layers, 4 materials
EUV lithography Reflection photomask 106 layers, 8 materials
Backside Conducting Layer
Doped Fused Silica Substrate
Resist ARC Film
Absorber Layer Capping Layer Bragg Reflector (100 layers)
Photomask Sees Paradigm Change With EUVL
Fused Silica Substrate
Resist
Absorber Layer
ARC* Film
Short EUV wavelength would be absorbed in a transmission mask
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Mask
Wafer Resist
Source
Mirrors M1
M2
M3
M4
M5
M6
Mask
Projection Lens
Wafer Resist
Source
Conventional lithography Transmission-based
On-axis optics
EUV lithography Reflection-based
Off-axis optics
Reference: Banqiu Wu and Ajay Kumar, Applied Materials, Extreme Ultraviolet Lithography, May 2009
EUV Photomask As Deployed In Reflection Mode
Image transfer pathway has now changed
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External Use
SILICON SYSTEMS GROUP SILICON SYSTEMS GROUP
Image Resolution Drives Mask Evolution Increases Mask Etch Challenge
A. Altering features on mask to achieve desired feature shapes on wafer
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(a) No OPC* (b) Mild OPC Size adjustment
(c) Medium OPC Hammerheads + serifs
(d) Aggressive OPC Scatter bars + serifs
B. New materials on mask improve resolution using interference techniques
Absorber layer ARC layer
Resist
Fused silica substrate Fused silica substrate
Phase shift layer Absorber layer
ARC layer Resist
Fused silica substrate
C. Wavelength shrink requires complex reflector element Bragg Reflector
(100 layers)
* OPC = Optical Proximity Correction | Source: B. Enyon & B. Wu, Photomask Fabrication Technology, Lithography, 2005
Phase shift mask Includes phase shift layer
Binary mask
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Technology Node
Mas
k E
tch
Cha
lleng
e
130nm 90nm 32nm 15nm 65nm 45nm 22nm 10nm
Tetra 2001
Tetra II 2005
Tetra III 2007
Tetra X 2010
Tetra EUV 2011
Mild OPC
Moderate OPC
Aggressive OPC
Mean-to-Target
Binary mask Phase shift mask
Phase shift mask
Advanced binary mask Phase shift
mask
Reflective mask
Zero-loss cap layer
Vertical sidewalls
Zero defects
Mean-to-Target
EUVL* Regime Conventional Regime
* EUVL = Extreme Ultraviolet lithography | Mean-to-Target is a mask-to-mask repeatability measurement
A Decade Of Tetra Product Leadership Delivering Innovations For Customer Needs
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Patterned Mask Post ARC + Absorber Etch
Vertical sidewalls (90º ± 0.5º) needed for off-axis optics
Ultra-low defectivity enabled by new chemistry and chamber
Best-in-class CD* uniformity
New process to etch new materials; no cap layer removal
Resist
ARC Layer Absorber Layer Capping Layer Bragg Reflector (100 layers)
Leadership For The Next Decade Tetra EUV Offers The Ideal Anisotropic Etch
Doped Fused Silica Substrate
* CD = Critical dimension
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Best-in-class technology and product engineering teams
Focused on strong customer support with a global footprint
Advanced services offerings for high tool uptime & productivity
EUVL review papers in top tier journals like APL*, JVST*
Authored subject-matter-expertise books on EUVL
Characterization
Full suite of metrology and inspection tools in the lab
In-house demo tools to etch conventional and EUV masks
Technology Leadership Team
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Applied Mask Etch Lab Unequaled Customer Engagement Capability
* APL = Applied Physics Letters | * JVST = Journal of Vacuum Science and Technology
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