26
Applications of the 3D electromagnetic model to some challenging optical problems September 24, 2004 Xiuhong wei, Paul Urbach, Arther Wachters Supported by the Dutch Ministry of Economic Affairs under project TS01044

Applications of the 3D electromagnetic model to some challenging optical problems September 24, 2004 Xiuhong wei, Paul Urbach, Arther Wachters Supported

Embed Size (px)

Citation preview

Applications of the 3D electromagnetic model to

somechallenging optical

problemsSeptember 24, 2004

Xiuhong wei, Paul Urbach, Arther Wachters

Supported by the Dutch Ministry of Economic Affairs under project TS01044

• Configurations– 2D or 3D– Non-periodic structure (Isolated pit in

multilayer)– Periodic in one direction (row of pits)– Periodic in two directions (bi-gratings)– Periodic in three directions (3D crystals)

• Source– Unrestricted incident field (plane wave, focused

spot) – Imposed current density

• Materials

– Linear.– In general anisotropic, (absorbing) dielectrics

and/or conductors:– Magnetic anisotropic materials (for

completeness):– Materials could be inhomogeneous:

• Mathematical Model– Given field: incident field

imposed current – Total field:– Maxwell equations’ are equivalent to Vector Helmholtz

Equation:

– Scattered field:

– The scattered field satisfies the Sommerfeld radiation condition.

,)(

,)(ti

tii

erJ

erE

,)]()([)()( 01

002 JirErrΕr rr

)()()( rErErE is

titi erHerE )( ,)(

• Variational formulation– E=E0+Es

• Calculate E0 in Multilayer– S-polarization, i

– P-polarization, j

– is the source term

– Tangential field h(z), e(z) in basis (i,l)

k iz

i

j

l

HE and

– Up and down recursion

– Amplitude for planewave

– Where are the tangential source term.)( and )( zhze

lzClzhzZlze

izCizezYizh

lzClzhzZlze

izCizezYizh

)()()()(

)()()()(

)()()()(

)()()()(

• Numerical calculation– Construction of Matrix

– Matrix property• Complex symmetric

• indefinite

rd

'

321~1

002

rrA

WEA

on Efield zero with terms termSource 0 W

• Iterative solver– RCM(reversing Cuthill-Mckee) reordering– Precondition

• ILUTP(incomplete LU threshold pivoting)– to solve a problem with 300,000 unknows, a fill-in is

needed of more than 600, which takes about 25hours on a Hewlett Packard machine (CPU = 107 FLOPS/sec)..

• Compare with MRILU(Matries reordering ILU)– More suitable for Finite Difference Method– Complex problems give an extra complication

– Krylov subspace method: BICGSTAB (bi-conjugate gradient stabilized algorithm )

• Propagation outside of computational domain– The field of Electric Dipole in free space

– However we need the field of electric dipole in Multilayer

• Calculated by Fourier transformation plane wave expansion• Using recursion as for calculating E0

r

e

r

ik

rrrrrkr

rr

e

ikrkr

r

ikrEe

ikrHe

02

2

4

13 )0,(

4

11 )0,(

prp

rrp

rpG

pr

pG

• Stratton-Chu formula

)( ),()()(

)( ),()()(

)(

0

0

,

rSprrGrErEn

rSprrGrHrHn

prE

s

s

s

d

d

i

He

Ee

Js

Observation point

• Results: Near Field Optical Recording• Background

• Geometry

Cross section

In the SIL:

kx nSIL kx

kx nSIL kx

Hence, Saptially frequences of the spot are increased , which means the spot became smaller

/2 nSIL

= 405nm

• NAeffective= 1.9

• Spotsize

/2NAeff=106nm

• Grooves(track)

Track pitch=226nm

Top view

Top view

Energy density, wall angle 55, E // groove

Energy density , wall angle 55, E groove

Top view

Energy density, wall angle 85, E //groove

Energy density , wall angle 85, E groove

Cross section xz-plane

Energy density, wall angle 55, E//groove

Energy density , wall angle 55, E groove

Cross section yz-plane

Energy density, wall angle 55, E // groove

Energy density , wall angle 55, E groove

– Lithography• Background

• Geometry

Incoherent Light source

Condenser

Mask

Aperture stop

Photoresist wafer

Projection lens

• Material: Crome = 193nm

• High NA lithography

• nCr=0.86 + 1.65 I

• Perpendicular incident

planewave

100nm

720nm

260nm

340nm

Top view

Serif mask, ESquare mask, E

Square mask, E Square mask, E

Top view

Square mask,

finite conduct, E

Square mask,

Perfect conduct, E

Top view

Cross section yz-plane

Square mask,

finite conduct, E

Square mask,

Perfect conduct, E

Far field

Square mask, E Square mask, E

acknowledge

• Our cluster in Philips, Paul Urbach, Arthur wachters, Jan Veerman

• Delft mathematical department, Kees Vuik, Kees Oosterlee, Yogi Erlangga, Mari Berglund

• Shell staffs, Ren´e-Edouard Plessix, Wim Mulder