apm2030

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N-Channel Enhancement Mode MOSFET

Copyright ANPEC Electronics Corp.Rev. A.1 - Aug., 2002

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ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advisecustomers to obtain the latest version of relevant information to verify before placing orders.

APM2030N

Pin Description

Ordering and Marking Information

Features

Applications

• 20V/6A , R DS(ON) =35m Ω(typ.) @ V GS =4.5V

RDS(ON) =38m Ω(typ.) @ V GS =2.5V

••••• Super High Dense Cell Design for Extremely

Low R DS(ON)

••••• Reliable and Rugged

••••• TO-252 Package

• Power Management in Computer, Portable

Equipment and Battery Powered Systems.

Top View of TO-252

G D S

1 2 3

APM2030N

Handling Code

Temp. Range

Package Code

Package CodeU : TO-252

Operation Junction Temp. Range

C :-55 to 150 CHandling Code

TR : Tape & Reel

°

APM2030N U : XXXXX - Date CodeAPM2030NXXXXX

Absolute Maximum Ratings (TA = 25 °C unless otherwise noted)

Symbol Parameter Rating Unit

VDSS Drain-Source Voltage 20

VGSS Gate-Source Voltage ±10V

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APM2030N

Symbol Parameter Rating Unit

ID

*

Maximum Drain Current – Continuous 20IDM Maximum Drain Current – Pulsed 40

A

TA=25 °C 50P D Maximum Power Dissipation

TA=100 °C 10W

TJ Maximum Junction Temperature 150 °C

TSTG Storage Temperature Range -55 to 150 °C

Rθ jA Thermal Resistance – Junction to Ambient 50 °C/W

* Surface Mounted on FR4 Board, t ≤ 10 sec.

APM2030NSymbol Parameter Test Condition

Min. Typ. Max.Unit

Static

BVDSSDrain-Source BreakdownVoltage VGS =0V , I DS =250 µA 20 V

IDSSZero Gate Voltage DrainCurrent VDS =18V , V GS =0V 1 µA

VGS(th) Gate Threshold Voltage VDS =VGS , IDS =250 µA 0.5 1.5 V

IGSS Gate Leakage Current VGS =±10V , V DS =0V ±100 nAVGS =4.5V , I DS =6A 35 40R DS(ON)

aDrain-Source On-state

Resistance VGS =2.5V , I DS =2A 38 50m Ω

VSDa Diode Forward Voltage I SD =4A , V GS =0V 0.6 1.3 V

Dynamic b

Q g Total Gate Charge 9 18Q gs Gate-Source Charge 3.6Q gd Gate-Drain Charge

VDS =10V , I DS = 5A

VGS =4.5V ,1

nC

td(ON) Turn-on Delay Time 17T r Turn-on Rise Time 15

td(OFF) Turn-off Delay Time 45T f Turn-off Fall Time

VDD =10V , I DS =1A ,

VGEN =4.5V , R G=0.2 Ω

25

ns

C iss Input Capacitance 520C oss Output Capacitance 110C rss Reverse Transfer Capacitance

VGS =0V

VDS =15V

Frequency=1.0MHz 70pF

Electrical Characteristics (TA = 25 °C unless otherwise noted)

Absolute Maxim um R atings (Cont.) (TA = 25 °C unless otherwise noted)

Notesa : Pulse test ; pulse width ≤300 µs, duty cycle ≤ 2%b : Guaranteed by design, not subject to production testing

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APM2030N

0 1 2 3 4 5 6 7 8 9 100.0250

0.0275

0.0300

0.0325

0.0350

0.0375

0.0400

0.0425

0.0450

0.0475

0.0500

0 1 2 3 4 50

5

10

15

20

-50 -25 0 25 50 75 100 125 1500.00

0.25

0.50

0.75

1.00

1.25

1.50

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.50

2

4

6

8

10

12

14

16

18

20

Typical Characteristics

2V

I D - D r a i n

C u r r e n t ( A

)

Transfer Characteristics

TJ=-55°CTJ=25°C

TJ=125°C

VGS - Gate-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

Tj - Junction Temperature (°C)

V G S ( t h ) - T h r e s h o l d

V o l t a g e

( V )

( N o r m a l i z e d )

IDS =250uA

R D S ( O N ) - O n - R e s i s t a n c e

( Ω )

On-Resistance vs. Drain Current

ID - Drain Current (A)

VGS =4.5V

Output Characteristics

I D - D r a i n

C u r r e n t ( A

)VGS =2.5,3,4,5,6,7,8,9,10V

1.5V

VDS - Drain-to-Source Voltage (V)

VGS =2.5V

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APM2030N

1 2 3 4 5 6 7 8 9 100.000

0.025

0.050

0.075

0.100

0.125

0 5 10 15 200

125

250

375

500

625

750

0 2 4 6 8 10 12 14 16 18 200

2

4

6

8

10

-50 -25 0 25 50 75 100 125 1500.00

0.250.50

0.75

1.00

1.25

1.50

1.75

2.00


VGS - Gate-to-Source Voltage (V)

R D S

( O N ) - O n - R e s i s t a n c e

( Ω )

ID=6A

On-Resistance vs. Gate-to-Source Voltage

R D S ( O N ) - O n - R e s i s t a n c e

( Ω )

( N o r m a l i z e d )

On-Resistance vs. Junction Temperature

VGS =4.5VID=6A

TJ - Junction Temperature (°C)

VDS - Drain-to-Source Voltage (V)

Capacitance

C a p a c i t a n c e

( p F ) Ciss

Coss

Crss

Gate Charge

QG - Gate Charge (nC)

V G S - G a t e - S o u r c e

V o l t a g e

( V ) VDS =10V

ID=5AFrequency=1MHz

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APM2030N

1E-4 1E-3 0.01 0.1 1 10 100 10000.01

0.1

1

SINGLE PULSE

D=0.01D=0.02

D=0.05

D=0.1

D=0.2

Duty Cycle=0.5

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.60.1

1

10

20

Source-Drain Diode Forward Voltage

I S - S o u r c e

C u r r e n t ( A

)

TJ=150°C TJ=25°C

VSD -Source-to-Drain Voltage (V)


P o w e r ( W

)

Single Pulse Power

Time (sec)

Square Wave Pulse Duration (sec)

N o r m a l i z e d

E f f e c t i v e T r a n s i e n t

T h e r m a l I m p e d a n c e

Normalized Thermal Transient Impedence, Junction to Ambient

1.Duty Cycle, D=t1/t22.Per Unit Base=R thJA =50°C/W3.T JM-TA=P DMZthJA

1E-3 0.01 0.1 1 10 100 10000

50

100

150

200

250

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APM2030N

TO-252( Reference JEDEC Registration TO-252)

Mil l imeters InchesDim

Min. Max. Min . Max.A 2.18 2.39 0.086 0.094

A1 0.89 1.27 0.035 0.050b 0.508 0.89 0.020 0.035

b2 5.207 5.461 0.205 0.215C 0.46 0.58 0.018 0.023

C1 0.46 0.58 0.018 0.023

D 5.334 6.22 0.210 0.245E 6.35 6.73 0.250 0.265

e1 3.96 5.18 0.156 0.204H 9.398 10 .41 0.370 0.410L 0.51 0.020

L1 0.64 1.02 0.025 0.040

L2 0.89 2.032 0.035 0.080

L2

D

L1

b

b2

E

C1

A

H

L

C

A1e1

Packaging I nformation

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APM2030N

Reflow Condition (IR/Convection or VPR Reflow)

Physical Specifications

Pre-heat temperature

183 C

Peak temperature

Time

° t e m p e r a t u r e

Classification Reflow Profiles

Convection or IR/Convection

VPR

Average ramp-up rate(183 °C to Peak) 3 °C/second max. 10 °C /second max.Preheat temperature 125 ± 25 °C) 120 seconds maxTemperature maintained above 183 °C 60 – 150 secondsTime within 5 °C of actual peak temperature 10 –20 seconds 60 secondsPeak temperature range 220 +5/-0 °C or 235 +5/-0 °C 215-219 °C or 235 +5/-0 °CRamp-down rate 6 °C /second max. 10 °C /second max.Time 25 °C to peak temperature 6 minutes max.

P ackage Reflow Conditions

pkg. thickness ≥≥≥≥ 2.5mmand all bgas

pkg. thickness < 2.5mm andpkg. volume ≥≥≥≥ 350 mm³

pkg. thickness < 2.5mm and pkg.volume < 350mm³

Convection 220 +5/-0 °C Convection 235 +5/-0 °CVPR 215-219 °C VPR 235 +5/-0 °CIR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

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APM2030N

Carrier Tape & Reel Dimensions

Application A B C J T1 T2 W P E

330 ±3 100 ± 2 13 ± 0. 5 2 ± 0.5 16.4 + 0.3-0.2 2.5 ± 0.5 16+ 0.3

- 0.1 8 ± 0.1 1.75 ± 0.1

F D D1 Po P1 Ao Bo Ko tTO-252

7.5 ± 0.1 1.5 +0.1 1.5 ± 0.25 4.0 ± 0.1 2.0 ± 0.1 6.8 ± 0.1 10.4 ± 0.1 2.5 ± 0.1 0.3 ±0.05

A

J

B

T2

T1

C

t

Ao

E

W

Po P

Ko

Bo

D1

D

F

P1

Test item Method DescriptionSOLDERABILITY MIL-STD-883D-2003 245°C,5 SECHOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°CPCT JESD-22-B, A102 168 Hrs, 100% RH, 121°CTST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Reliabili ty test program

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APM2030N

Customer Service

Anpec Electronics Corp.Head Office :

5F, No. 2 Li-Hsin Road, SBIP,Hsin-Chu, Taiwan, R.O.C.Tel : 886-3-5642000Fax : 886-3-5642050

Taipei Branch :7F, No. 137, Lane 235, Pac Chiao Rd.,Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.Tel : 886-2-89191368Fax : 886-2-89191369

Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Per ReelTO- 252 16 13.3 2500

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apm2030