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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET

!!! ! Low On-Resistance BVDSS 30V!!! ! Simple Drive Requirement RDS(ON) 22m "

!!! ! Dual N MOSFET Package ID 7.8A

Description

Absolute Maximum Ratings

Symbol UnitsVDS V

VGS V

ID@T A=25 # A

ID@T A=70 # A

IDM A

P D@T A=25 # W

W/ #

TSTG #

TJ

#

Symbol Value Unit

Rthj-a Thermal Resistance Junction-ambient 3 Max. 62.5 # /W

Data and specifications subject to change without notice

Pb Free Plating Product

Thermal DataParameter

Total Power Dissipation 2

-55 to 150

Operating Junction Temperature Range -55 to 150

Linear Derating Factor

Storage Temperature Range

Continuous Drain Current 3 6.2

Pulsed Drain Current 1 30

Parameter Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current 3

200112051

AP4232GM

Rating30

20

7.8

0.016

S1G1

S2G2

D1D1

D2D2

SO-8

G2

D2

S2

G1

D1

S1

The Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, ultra low on-resistance andcost-effectiveness.

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Electr ical Characteris tics@T j=25o C(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units

BVDSS Drain-Source Breakdown Voltage V GS =0V, I D=250uA 30 - - V

$ BVDSS /$ T j Breakdown Voltage Temperature Coefficient Reference to 25 # , ID=1mA - 0.02 - V/ #

RDS(ON) Static Drain-Source On-Resistance2 VGS =10V, I D=7A - - 22 m"

VGS =4.5V, I D=5A - - 32 m"

VGS(th) Gate Threshold Voltage V DS =VGS , ID=250uA 1 - 3 V

g fs Forward Transconductance V DS =10V, I D=7A - 12 - SIDSS Drain-Source Leakage Current (T j=25 oC) VDS =30V, V GS =0V - - 1 uA

Drain-Source Leakage Current (T j=70o

C) VDS =24V, V GS =0V - - 25 uAIGSS Gate-Source Leakage V GS =20V - - nA

Qg Total Gate Charge2 ID=7A - 13 21 nC

Qgs Gate-Source Charge V DS =24V - 3 - nC

Qgd Gate-Drain ("Miller") Charge V GS =4.5V - 9 - nC

td(on) Turn-on Delay Time2 VDS =15V - 10 - ns

tr Rise Time I D=1A - 7 - ns

td(off) Turn-off Delay Time R G=3.3 " ,VGS =10V - 22 - ns

tf Fall Time R D=15 " - 8 - ns

C iss Input Capacitance V GS =0V - 720 1150 pFCoss Output Capacitance V DS =25V - 230 - pF

C rss Reverse Transfer Capacitance f=1.0MHz - 200 - pF

Rg Gate Resistance f=1.0MHz - 1.2 1.8 "

Source-Drain DiodeSymbol Parameter Test Conditions Min. Typ. Max. Units

VSD Forward On Voltage2 IS=1.7A, V GS =0V - - 1.2 V

trr Reverse Recovery Time2 IS=7A, VGS =0V, - 16 - ns

Qrr

Reverse Recovery Charge dI/dt=100A/s - 8 - nC

Notes:1.Pulse width limited by Max. junction temperature.

2.Pulse width

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AP4232GM

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature

0

10

20

30

40

0 1 2 3 4 5

V DS , Drain-to-Source Voltage (V)

I D , D

r a i n C u r r e n t

( A )

T A = 25 o C 10V

7.0V 5.0 V 4.5 V

V G =3.0V

0

10

20

30

40

0 1 2 3 4 5

V DS , Drain-to-Source Voltage (V)

I D , D

r a i n C u r r e n t

( A )

T A = 150 o C 10V

7.0V 5.0 V 4.5 V

V G =3.0V

15

20

25

30

2 4 6 8 10

V GS , Gate-to-Source Voltage (V)

R D S ( O N )

( m " "" " )

I D = 5 AT A =25 ### #

0.7

1.0

1.3

1.6

-50 0 50 100 150

T j , Junction Temperature ( o C)

N o r m a l

i z e d

R D S ( O N )

I D = 7 AV G =10V

0

2

4

6

8

0 0.2 0.4 0.6 0.8 1 1.2

V SD , Source-to-Drain Voltage (V)

I S ( A )

T j =25 o C T j =150

o C

0.0

0.5

1.0

1.5

2.0

-50 0 50 100 150

T j

, Junction Temperature ( o C)

N o r m a l

i z e d

V G S ( t h )

( V )

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Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform

AP4232GM

Q

VG

4.5V

Q GS Q GD

Q G

Charge

0

4

8

12

16

0 5 10 15 20 25 30

Q G , Total Gate Charge (nC)

V G S , G

a t e

t o S o u r c e

V o l

t a g e

( V )V DS =15V V DS =20V V DS =24V

I D = 7 A

100

1000

1 5 9 13 17 21 25 29

V DS , Drain-to-Source Voltage (V)

C ( p F )

=1.0MHz

C iss

C oss

C rss

0.01

0.1

1

10

100

0.1 1 10 100

V DS , Drain-to-Source Voltage (V)

I D ( A )

T A =25 o C

Single Pulse

100us1ms

10ms

100ms

1s

DC

0.001

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10 100 1000

t , Pulse Width (s)

N o r m a l

i z e d T h e r m a l

R e s p o n s e

( R t h j a

)

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

PDM

Duty factor = t/TPeak T j = P DM x R thja + T aR thja = 135 #### /W

tT

0.02

0

10

20

30

0 2 4 6

V GS , Gate-to-Source Voltage (V)

I D , D

r a i n C u r r e n t

( A ) T j =150

o C T j =25 o C

V DS

=5V