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1 “Atomistic modeling of Solid Phase Epitaxial Regrowth using Lattice Kinetic Monte Carlo: Facet formation and strain dependencies Ignacio Martin-Bragado and Victor Moroz Junction Technology Group Meeting May 5th

“Atomistic modeling of Solid Phase Epitaxial Regrowth ......Lett. 95, 123123 (2009) 24 The strain at the corner generates the trench. 25 •A LKMC model, based on existing qualitative

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Page 1: “Atomistic modeling of Solid Phase Epitaxial Regrowth ......Lett. 95, 123123 (2009) 24 The strain at the corner generates the trench. 25 •A LKMC model, based on existing qualitative

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“Atomistic modeling of Solid Phase

Epitaxial Regrowth using Lattice

Kinetic Monte Carlo: Facet

formation and strain dependencies

Ignacio Martin-Bragado and Victor Moroz

Junction Technology Group Meeting

May 5th

Page 2: “Atomistic modeling of Solid Phase Epitaxial Regrowth ......Lett. 95, 123123 (2009) 24 The strain at the corner generates the trench. 25 •A LKMC model, based on existing qualitative

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• The problem: introduction

• An atomistic solution: LKMC

• The model.

• Planar growth for different orientations.

• A look at time evolution

• Fin FETs

• SPER on rectangular shapes.– Why corners are different?

– Introducing strain

– Results

• Conclusions

Outline

Page 3: “Atomistic modeling of Solid Phase Epitaxial Regrowth ......Lett. 95, 123123 (2009) 24 The strain at the corner generates the trench. 25 •A LKMC model, based on existing qualitative

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• Typicall ultra-shallow junctions produce substrate amorphization.

• Subsequent recrystallization, or Solid Phase Epitaxial Regrowth (SPER) can significantly modified the implanted profiles: SPER simulation is critical.

• SPER depends on the substrate orientation, with ratios 20:10:1 for (100), (110) and (111).

Introduction

Page 4: “Atomistic modeling of Solid Phase Epitaxial Regrowth ......Lett. 95, 123123 (2009) 24 The strain at the corner generates the trench. 25 •A LKMC model, based on existing qualitative

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• Existing non Lattice KMC models

accurately predict the one-dimensional

SPER.

• Unfortunately, such models do not have

different speeds for different orientations,

much less faceting.

• In this work, a Lattice KMC model is

introduced to overcome these limitations.

An atomistic solution: LKMC

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• We introduce the silicon lattice in the amorphous/crystalline interface

• A flag “A”morphous or “C”rystalline is set for every of these lattice atoms.

• The transition of “A” atoms to “C” atoms is simulated following an Arrhenius rate

• We follow Drosd and Washburn ideas to define such a rate:– Activation energy is constant

– Prefactor depends on the atom neighborhood.

The model (I)

Drosd and Washburn, J. Appl. Phys. 53, 39 (1982)

Page 6: “Atomistic modeling of Solid Phase Epitaxial Regrowth ......Lett. 95, 123123 (2009) 24 The strain at the corner generates the trench. 25 •A LKMC model, based on existing qualitative

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The model (II)

• SPER rate is:

• K(1), prefactor for atoms with two undistorted bonds.

• K(2), prefactor for atoms needing another one to join in a cluster

• K(3), prefactor for atoms needing two more to join in a cluster

• Model implemented in Sentaurus Process KMC

Idea: Two undistorted

bonds needed

)/)(exp()( TKEnK Bxy

Page 7: “Atomistic modeling of Solid Phase Epitaxial Regrowth ......Lett. 95, 123123 (2009) 24 The strain at the corner generates the trench. 25 •A LKMC model, based on existing qualitative

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Planar growth for different orientations

(I)

Lines, our work: Appl. Phys. Lett. 95, 123123 (2009)

Symbols: G.L. Olson and J. A. Roth. Mater. Sci. Rep. 3 1 (1988)

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Planar growth for different orientations

(II)

• E = 2.7 eV

• K(1) = 9.0x1016 atoms/s

• K(2) = 2.3x1015 atoms/s

• K(3) = 1.1x1011 atoms/s

• K(1), K(2), K(3) related

with the microscopical

growth of (100), (110)

and (111)

Experimental results from Csepregi et al. J. Appl. Phys. 49, 3906 (1978)

Page 9: “Atomistic modeling of Solid Phase Epitaxial Regrowth ......Lett. 95, 123123 (2009) 24 The strain at the corner generates the trench. 25 •A LKMC model, based on existing qualitative

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A look at time evolution.

Page 10: “Atomistic modeling of Solid Phase Epitaxial Regrowth ......Lett. 95, 123123 (2009) 24 The strain at the corner generates the trench. 25 •A LKMC model, based on existing qualitative

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A look at time evolution. |

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A look at time evolution. -

Page 12: “Atomistic modeling of Solid Phase Epitaxial Regrowth ......Lett. 95, 123123 (2009) 24 The strain at the corner generates the trench. 25 •A LKMC model, based on existing qualitative

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A look at time evolution. |

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A look at time evolution. -

{100}

{110}

{111}

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A look at time evolution. |

Page 15: “Atomistic modeling of Solid Phase Epitaxial Regrowth ......Lett. 95, 123123 (2009) 24 The strain at the corner generates the trench. 25 •A LKMC model, based on existing qualitative

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A look at time evolution. -

Page 16: “Atomistic modeling of Solid Phase Epitaxial Regrowth ......Lett. 95, 123123 (2009) 24 The strain at the corner generates the trench. 25 •A LKMC model, based on existing qualitative

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A look at time evolution. |

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A closer look to the

amorphous/crystalline interface

{111} nano-islands

{111} plane

{100} plane {110} plane

Page 18: “Atomistic modeling of Solid Phase Epitaxial Regrowth ......Lett. 95, 123123 (2009) 24 The strain at the corner generates the trench. 25 •A LKMC model, based on existing qualitative

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SPER and fins: Faceted growth after fin

amorphization.

Experimental results from Duffy et al.

Appl. Phys. Lett. 90, 241912 (2007)

Page 19: “Atomistic modeling of Solid Phase Epitaxial Regrowth ......Lett. 95, 123123 (2009) 24 The strain at the corner generates the trench. 25 •A LKMC model, based on existing qualitative

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SPER and fins. Experiment vs.

simulation comparison.

Experimental results from Duffy et al. Appl. Phys. Lett. 90, 241912 (2007)

Lines: Experiment, symbols, LKMC simulation.

Page 20: “Atomistic modeling of Solid Phase Epitaxial Regrowth ......Lett. 95, 123123 (2009) 24 The strain at the corner generates the trench. 25 •A LKMC model, based on existing qualitative

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Recrystallization of rectangular shapes:

K.L. Saenger et al. J. Appl. Phys. 101, 084912 (2007)

Page 21: “Atomistic modeling of Solid Phase Epitaxial Regrowth ......Lett. 95, 123123 (2009) 24 The strain at the corner generates the trench. 25 •A LKMC model, based on existing qualitative

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Why corners are different? Stress/Strain

as a reason: lattice distortion

Page 22: “Atomistic modeling of Solid Phase Epitaxial Regrowth ......Lett. 95, 123123 (2009) 24 The strain at the corner generates the trench. 25 •A LKMC model, based on existing qualitative

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• The quality of the crystalline lattice

template degrades when distorted

• This is modeled by increasing SPER

activation energy by λ|εxy|

• The absolute value is issued because the

lattice is distorted regardless of clockwise

or counterclockwise shear strain.

Introducing strain dependency

)/)(exp()( TKEnK Bxy

Page 23: “Atomistic modeling of Solid Phase Epitaxial Regrowth ......Lett. 95, 123123 (2009) 24 The strain at the corner generates the trench. 25 •A LKMC model, based on existing qualitative

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Rectangular shape results: λ=5.

I Martin-Bragado and V. Moroz. Appl. Phys. Lett. 95, 123123 (2009)

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The strain at the corner generates the

trench

Page 25: “Atomistic modeling of Solid Phase Epitaxial Regrowth ......Lett. 95, 123123 (2009) 24 The strain at the corner generates the trench. 25 •A LKMC model, based on existing qualitative

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• A LKMC model, based on existing qualitative atomistic ideas, quantitatively explains and reproduces different planar SPER velocities

• The model also satisfactory reproduces facet formation in very thin amorphized fins.

• Finally, it explains anomalous regrowthpatters and facet formation in rectangular amorphized (001) and (011) Si substrates.

• Model included in sprocess KMC, 2010.03 release.

Conclusions

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Questions?