AO3407 [A79T]

AO340730V P-Channel MOSFET

General Description Product Summary

VDS ID (at VGS=10V) -4.1A RDS(ON) (at VGS=10V) < 52m RDS(ON) (at VGS = 4.5V) < 87m

SymbolVDSDrain-Source Voltage -30

The AO3407 uses advanced trench technology to provideexcellent RDS(ON) with low gate charge. This device issuitable for use as a load switch or in PWM applications.

VMaximum UnitsParameter

Absolute Maximum Ratings TA=25C unless otherwise noted

-30V

SOT23Top View Bottom View

D

G

SG

S

D

G

D

S

DS

VGS

IDM

TJ, TSTG

Symbolt 10sSteady-StateSteady-State RJL

0.9TA=70CJunction and Storage Temperature Range -55 to 150 C

Thermal Characteristics

Power Dissipation BPD

TA=25C W

Parameter Typ MaxC/WRJA

70100

90

V20Gate-Source Voltage

AID

-4.1-3.5-25

TA=25CTA=70C

Pulsed Drain Current C

Continuous DrainCurrent

1.4

Maximum Junction-to-Lead C/WC/WMaximum Junction-to-Ambient A D

6312580

Maximum Junction-to-Ambient AUnits

SOT23Top View Bottom View

D

G

SG

S

D

G

D

S

Rev 5: Nov 2011 www.aosmd.com Page 1 of 5

AO3407

Symbol Min Typ Max Units

BVDSS -30 VVDS=-30V, VGS=0V -1

TJ=55C -5IGSS 100 nAVGS(th) Gate Threshold Voltage -1.4 -1.9 -2.4 VID(ON) -25 A

34 52TJ=125C 52 73

54 87 mgFS 10 SVSD -0.7 -1 VIS -2 A

Ciss 520 pFCoss 100 pFCrss 65 pFRg 3.5 7.5 11.5

Qg(10V) 9.2 11 nCQg(4.5V) 4.6 6 nCQgs 1.6 nCQgd 2.2 nCtD(on) 7.5 nst 5.5 ns

Maximum Body-Diode Continuous Current

Input CapacitanceOutput Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

Turn-On Rise Time V =-10V, V =-15V,

Total Gate Charge

VGS=-10V, VDS=-15V, ID=-4.1AGate Source ChargeGate Drain Charge

Total Gate Charge

IS=-1A,VGS=0VVDS=-5V, ID=-4.1AVGS=-4.5V, ID=-3A

Forward TransconductanceDiode Forward Voltage

Gate resistance VGS=0V, VDS=0V, f=1MHz

A

VDS=VGS ID=-250AVDS=0V, VGS= 20V

Zero Gate Voltage Drain Current

Gate-Body leakage current

m

On state drain current

ID=-250A, VGS=0V

VGS=-10V, VDS=-5VVGS=-10V, ID=-4.1A

RDS(ON) Static Drain-Source On-Resistance

IDSS

Reverse Transfer CapacitanceVGS=0V, VDS=-15V, f=1MHz

SWITCHING PARAMETERS

Electrical Characteristics (TJ=25C unless otherwise noted)

STATIC PARAMETERSParameter Conditions

Drain-Source Breakdown Voltage

tr 5.5 nstD(off) 19 nstf 7 nstrr 11 nsQrr 5.3 nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Body Diode Reverse Recovery Charge IF=-4.1A, dI/dt=100A/s

Turn-On Rise TimeTurn-Off DelayTime

VGS=-10V, VDS=-15V,RL=3.65, RGEN=3

Turn-Off Fall TimeIF=-4.1A, dI/dt=100A/sBody Diode Reverse Recovery Time

A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design.B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance.C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initialTJ=25C.D. The RJA is the sum of the thermal impedence from junction to lead RJL and lead to ambient.E. The static characteristics in Figures 1 to 6 are obtained using

AO3407

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1752

10

018

0

5

10

15

20

25

30

0.5 1.5 2.5 3.5 4.5 5.5

-I D

(A)

-VGS(Volts)Figure 2: Transfer Characteristics (Note E)

10

20

30

40

50

60

70

80

0 2 4 6 8 10

RDS

(ON)

(m

)

-ID (A)Figure 3: On-Resistance vs. Drain Current and Gate

Voltage (Note E)

0.8

1

1.2

1.4

1.6

1.8

0 25 50 75 100 125 150 175

No

rma

lize

d O

n-R

es

ista

nc

e

Temperature (C)Figure 4: On-Resistance vs. Junction Temperature

(Note E)

VGS=-4.5VID=-3A

VGS=-10VID=-4.1A

25C125C

VDS=-5V

VGS=-4.5V

VGS=-10V

0

5

10

15

20

25

30

0 1 2 3 4 5

-I D

(A)

-VDS (Volts)Fig 1: On-Region Characteristics (Note E)

VGS=-3.5V

-4V

-6V

-10V-4.5V

40

0

5

10

15

20

25

30

0.5 1.5 2.5 3.5 4.5 5.5

-I D

(A)

-VGS(Volts)Figure 2: Transfer Characteristics (Note E)

10

20

30

40

50

60

70

80

0 2 4 6 8 10

RDS

(ON)

(m

)

-ID (A)Figure 3: On-Resistance vs. Drain Current and Gate

Voltage (Note E)

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

1.0E+00

1.0E+01

1.0E+02

0.0 0.2 0.4 0.6 0.8 1.0 1.2

-I S

(A)

-VSD (Volts)Figure 6: Body-Diode Characteristics (Note E)

25C

125C

0.8

1

1.2

1.4

1.6

1.8

0 25 50 75 100 125 150 175

No

rma

lize

d O

n-R

es

ista

nc

e

Temperature (C)Figure 4: On-Resistance vs. Junction Temperature

(Note E)

VGS=-4.5VID=-3A

VGS=-10VID=-4.1A

20

40

60

80

100

120

2 4 6 8 10

RDS

(ON)

(m

)

-VGS (Volts)Figure 5: On-Resistance vs. Gate-Source Voltage

(Note E)

25C125C

VDS=-5V

VGS=-4.5V

VGS=-10V

ID=-4.1A

25C

125C

0

5

10

15

20

25

30

0 1 2 3 4 5

-I D

(A)

-VDS (Volts)Fig 1: On-Region Characteristics (Note E)

VGS=-3.5V

-4V

-6V

-10V-4.5V


AO3407

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

0

2

4

6

8

10

0 2 4 6 8 10

-V G

S(V

olts

)

Qg (nC)Figure 7: Gate-Charge Characteristics

0

200

400

600

800

0 5 10 15 20 25 30

Capa

cita

nc

e (p

F)

-VDS (Volts)Figure 8: Capacitance Characteristics

Ciss

Coss

Crss

VDS=-15VID=-4.1A

0

10

20

30

40

0.0001 0.01 1 100

Pow

er

(W)

Pulse Width (s)Figure 10: Single Pulse Power Rating Junction-to-

Ambient (Note F)

TA=25C

0.0

0.1

1.0

10.0

100.0

0.01 0.1 1 10 100

I D(A

mps

)

VDS (Volts)Figure 9: Maximum Forward Biased Safe

Operating Area (Note F)

10s

10s

1ms

DC

RDS(ON) limited

TJ(Max)=150CTA=25C

100s

10ms10ms

0

2

4

6

8

10

0 2 4 6 8 10

-V G

S(V

olts

)

Qg (nC)Figure 7: Gate-Charge Characteristics

0

200

400

600

800

0 5 10 15 20 25 30

Capa

cita

nc

e (p

F)

-VDS (Volts)Figure 8: Capacitance Characteristics

Ciss

Coss

Crss

VDS=-15VID=-4.1A

0

10

20

30

40

0.0001 0.01 1 100

Pow

er

(W)

Pulse Width (s)Figure 10: Single Pulse Power Rating Junction-to-

Ambient (Note F)

TA=25C

0.0

0.1

1.0

10.0

100.0

0.01 0.1 1 10 100

I D(A

mps

)

VDS (Volts)Figure 9: Maximum Forward Biased Safe

Operating Area (Note F)

10s

10s

1ms

DC

RDS(ON) limited

TJ(Max)=150CTA=25C

100s

10ms10ms

0.001

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Z JA

No

rma

lize

d Tr

an

sie

nt

The

rma

l Re

sis

tan

ce

Pulse Width (s)Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Single Pulse

D=Ton/TTJ,PK=TA+PDM.ZJA.RJA

TonT

PD

In descending orderD=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

RJA=125C/W


AO3407

VDC

Ig

Vds

DUT

VDC

Vgs

VgsQg

Qgs Qgd

Charge

Gate Charge Test Circuit & Waveform

-

+

-

+

-10V

DUT

L

Vgs

Diode Recovery Test Circuit & Waveforms

Vds -

Vds + rrQ = - Idt

t rr-Isd -I

VDCDUT VddVgs

Vds

Vgs

RL

Rg

Resistive Switching Test Circuit & Waveforms

-

+

Vgs

Vds

t t

t

t t

t

90%

10%

r

on

d(off) f

off

d(on)

VDC

Ig

Vds

DUT

VDC

Vgs

VgsQg

Qgs Qgd

Charge

Gate Charge Test Circuit & Waveform

-

+

-

+

-10V

Ig

Vgs-

+VDC

DUT

L

Vgs

Isd

Diode Recovery Test Circuit & Waveforms

Vds -

Vds +

dI/dtRM

rr

VddVdd

Q = - Idt

t rr-Isd

-Vds

F-I

-I

VDCDUT VddVgs

Vds

Vgs

RL

Rg

Resistive Switching Test Circuit & Waveforms

-

+

Vgs

Vds

t t

t

t t

t

90%

10%

r

on

d(off) f

off

d(on)


Documents

AO3407 [A79T]