Aluminum Nitride Powder & GranuleAluminum Nitride Ceramics

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What's AlN?

Features

Applications

Differences among ceramic materials

1. High thermal conductivity (about 10 times that of alumina)2. Close thermal expansion coefficient to that of Silicon (Si)3. High insulation4. High mechanical strength (higher than alumina)5. High corrosion resistance (non-wetted by most molten

metals)

Feel free to ask us anything about AlN!

Comparison of thermal conductivity Comparison of thermal expansion coefficient

■ AlN has high thermal conductivity outstandingly among various substrate materials.

■ AIN has a thermal expansion coefficient close to that of various semiconductor substrate materials. Metals with large thermal expansion coefficients are not suitable for the mounting of large semiconductor devices. AIN has an advantage on thermal expansion coefficient.

　SSilicon carbide

iC　＜　SSilicon nitride

i₃N₄　＜　AAluminal₂O₃　＜　　A

Aluminum nitridelN　　

Comparison of halogen-plasma resistance

Substrate materials Wiring materials

0

50

100

150

200

250

300

350

400

450

20

70

237

419

293

398

0.4 0.3

Device materials

41

Sapphire

Al203

Si3N4

PCB

Polyimide film Al

Ag

Au

Cu

Typical values

Thermal Conductivity ［W／m • K］

230

140

Si

180

AIN(SH-30)

AIN(SS23)

54

GaAs

Semiconductor devicesubstrate materials

Metalsubstrates

AINsubstrates

Significant difference inexpansion and contraction

Large force is applied to the device⇨Device performance deteriorates

Turning on and off the devicechanges the temperature

Device and substrate expandand contract

Coefficient of Liner expansion（×10

-6／℃）

5.64.5

5.2

23.5

0

5

10

15

20

25

GaN InP

InAs

17

CuAl

7.5

Sapphire

Typical values

4.5

AIN

6.5

GaAs

4.1

Si

6. High purity (does not contaminate molten metal even at a high temperature)

7. Transparency (allows visible to infrared light to pass through easily)

8. High halogen-plasma resistance

Semiconductor manufacturing equipmentPlasma device parts(Electrostatic) wafer chuck partsStepper wafer holding jig, etc.

TransportationIGBT and GTO heat sink for Automotive power supply substrate (for hybrid cars, etc.) Electric train and locomotive power supply substrate

CommunicationLaser diode heat sink for Transmitters and amplifiers for optical fiber

communication

Lighting and displayLED heat sink

Information processingHeat dissipation sheetComputer heat sinkLaser diode heat sink for Optical disk pickup (CD-R, DVD, etc.)

Industrial machineryIGBT heat sink for Various types of inverter control power supply High-performance elevator High-performance mill

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Tokuyama's AlN line-upFrom "Powder" through "Ceramics"

▲

If you want to make AlN Ceramics, see...▲

1-1 Powder▲

1-2 Granule

▲

If you want to use AlN as filler, see...

▲

1-1 Powder

▲

1-3 Sintered Powder

▲

If you need AlN Ceramics, see...

▲

2-1 　

▲

2-2 Hi Msoft

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Powder & Granule

● High purity powder which is obtained by Carbo-thermal reduction process

● Many achievements and a wide variety of applications

● Quality product by feedback from our own ceramics production

1-2 High purity Aluminum Nitride Granule

SEM of AlN Granule H-T gradeProperties Units H-T gradeMean particle size µm 75Bulk density g/cm3 0.97Tap density g/cm3 1.09Relief angle ° 31

・Granuled with sintering additives and organic binder

・Ready for press as delivered　・Granule without sintering additives available

1-3 Sintered Aluminum Nitride Powder

Particle Size / µm101

0

5

10

15

100 1000

Freq

uenc

y / %

FAN-f80

FAN-f50

Spherical shape (e.g.: FAN-f80)Grade Units FAN-f50 FAN-f80Particle shape Spherical shape Spherical shapeMean particle size µm 35 〜 60 65 〜 90

・Sintered AlN Granule (H-T grade)

・For filler

1-1 High purity Aluminum Nitride Powder

・High purity

・Sharp distribution

・High sinterability

SEM of AlN Powder H grade

Item H grade E gradeSpecific surface area（m2/g） 2.50 〜 2.68 3.27 〜 3.47Mean particle size（μ m） 1.07 〜 1.17 0.96 〜 1.07

Impurity

O（wt%） 0.78 〜 0.86 0.79 〜 0.88C（ppm） 130 〜 270 220 〜 320Ca（ppm） 200 〜 240 10 〜 22Si（ppm） 39 〜 48 9 〜 13Fe（ppm） 10 〜 14 2 〜 9

Particle size distribution of AlN Powder

Particle Size / µm10.1

0

2

4

6

8

10

10 100

Freq

uenc

y / %

H grade

E grade

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Ceramics

2-2 Machinable ceramics Hi Msoft

2-1 Aluminum Nitride Ceramics

① SH-30・�High�mechanical�strength�AlN�ceramics�with�less�than�1mm�thickness

・�For�heat�sink�of�powder�devices,�LD�and�LED

② SH-15・�High�thermal�conductive�AlN�ceramics�with�more�than�2mm�thickness

・�For�parts�of�semiconductor�manufacturing�equipments

③ SH-50・�High�purity�(without�sintering�additives)�AlN�Ceramics�with�more�than�2mm�thickness

・�For�parts�of�semiconductor�manufacturing�equipments

・�Suitable�to�avoid�pollutions�of�heavy�metals�for�semiconductor�production�equipments

・�Composite�of�AlN�and�BN

・�Good�machinability

Properties Units SH-30 SH-15 SH-50

General properties Density g/cm3 3.34 3.33 3.24

Electrical properties

Volume resistivity Ω・cm 8.4 × 1013 1.1 × 1014 3.1 × 1013

Dielectric constant RT,1MHz − 9.1 9.1 8.9

Dielectric loss RT,1MHz − 2.5 × 10-4 3.0 × 10-4 2.6 × 10-4

Withstand Voltage kV/mm 36.7 31.3 18.7

Thermal properties Thermal conductivity 20℃ W/(m・K) 174 184 86

Mechanical properties Bending strength MPa 511 357 356

Properties Units Hi Msoft

Density g/cm3 2.88

Bending strength MPa 320

Thermal conductivity W/(m・K) 92

Volume resistivity Ω・cm 1.0 × 1014

Dielectric constant 25℃、1MHz − 6.8

Dielectric loss 25℃、1MHz − 1.0 × 10-5

Withstand Voltage kV/mm 56

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*The product specifications appearing in this catalog are subject to change without notice.*The values represented in this catalog are typical values and are not to be interpreted as specifications.

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Kasumigaseki 3-chome, Chiyoda-ku,

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2012. 03 WEB

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