Advanced wavelength dispersive XRF analysis

2830 ZT WAFER ANALYZER

Non-contact determination of layer thickness and composition

The Analytical X-ray Company

2830 ZT

Supporting the semiconductor and data storage industry – now and in the future

Semiconductor and data storage technology has advanced rapidly over recent years, and the rate of change continues to gather momentum. This places considerable pressure on the metrology techniques used to control production processes - instrumentation must keep pace with developments and meet ever more rigorous demands.

Deposited thin films and multi-layers continue to decrease in thickness while increasing in complexity. As new technologies emerge at an escalating rate, yield improvement (during process ramp up) must evolve accordingly. Flexible and cost-effective process monitoring has become increasingly critical to obtain optimal process conditions and maximum yield.

X-ray fluorescence (XRF) spectroscopy meets the key requirements of semiconductor and hard disk manufacturers. The technique is inherently suited to thin film analysis, offering exceptional precision and sensitivity for the simultaneous determination of layer thickness and composition. Moreover, XRF is compatible with a broad range of applications, facilitates straightforward stack analysis and is synonymous with high uptime and low running costs.

The 2830 ZT is designed for maximum uptime and capability. It features the latest X-ray technology, including:

•Zetatechnology,eliminatingX-raytube aging, greatly enhancing operational efficiency

•4kWSST-mAXtubeforoperationat 160 mA current to give the highest sensitivities and lowest detection limits

•FPMultisoftwareallowingsimultaneous analysis of film thickness and composition of stacks up to 16 layers

2830 ZT

Benefits

Ultimate capability for measuring film thicknessand composition

The 2830 ZT wavelength dispersive X-ray fluorescence (WDXRF) Wafer Analyzer is the successor to PANalytical’s highly acclaimed PW2830. Designed specifically for the industry, it enables the determination of layer composition, thickness, dopant levels and surface uniformity for a wide range of wafers up to 300 mm.

The2830ZTWaferAnalyzerisequippedwithPANalytical’sadvanced4kWSST-mAX X-ray tube, featuring groundbreaking ZETA technology which eliminates

the effects of X-ray tube aging – by far the largest contributor to instrument drift. As a result, the 2830 ZT attains the highest levels of productivity and sensitivity,withexcellentlightelementperformance.What’smore,thankstoZETA technology, the 2830 ZT maintains these qualities throughout its entire lifetime.

2830 ZT application examples:

• Dielectrics: BPSG, PSG, BSG, ASG

• Dopedpolysilicon

• Barrierfilmsandstacks: Ta, TaN, WCxNy, TiN, Si3N4

• Silicides/salicides: TiSix, CoSix, WSix, NiSix

• Metallizationfilmsandstacks: Cu, AlCu, Ti, W, Au, Pt, AuGe, Ag, Sn, etc.

• Low-kdielectrics:FSG, SiOF

• High-kdielectrics: HfO2, HfAlOx, Ta2O5, etc.

• TMRandGMRrelatedfilmsand stacks: CoFe(B), AlOx, Ru, NiFe, IrMn, CrPtMn, etc.

• PRAMandFeRAMfilms: PZT, SBT, BLT, GeSbTe

• SAWandBAWfilmsandstacks: Al, Cu, AlCu, Ti, Ta, Pt

• SiGe

Unrivalled productivity• Continuouscapabilityandspeed• Maximizeduptime• Superiorlightelementcapability

Fast and cost-effective multi-layer analysis• PowerfulFundamentalParameter

software• Analysisofstacksupto16layers• Simultaneousmeasurementofup

to24elements• Intuitiveoperation

Seamless fab integration• Efficient,compactsystemdesign• Frommanualtofullyautomated

wafer loading • Compliancetoallrelevant

standards

A complete solution• Excellenttoolmatching• Completesupport

2830 ZT

Unrivalled productivity

SST-mAXfeaturesgroundbreakingZETAtechnologywhicheliminatestheeffectsofX-raytubeaging.‘Newtube’performanceismaintainedthroughoutthetube’slifetime. Together with high sensitivity, ZETA technology ensures that rapid analysis and short measurement times are maintained across the lifetime of the tube. ZETA technology strongly reduces the need for drift correction and recalibration which increases productivity and uptime of the instrument.

Continuous capability and speed

Maximized uptime

ConventionalX-raytubessuffertungsten evaporation, which causes depositsontheinsideofthetube’sberyllium window. Instrumentation using such tubes requires regular drift correction to compensate for decreasing intensity, especially for light elements. ImplementationoftheSST-mAXinthe 2830 ZT solves this drift problem, therebymaximizinguptimeandmaintaining instrument precision over time.

50%0 2000 4000 6000 8000 10000 12000

60%

70%

80%

90%

100%

110%

Rh

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sity

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SST-mAX

Typical XRFend-windowtube

Stability of SST-mAX compared to a typical end-window tube

Zeta Technology

ZETA Technology

Unrivalled productivity

Superior light element performance

Consistent and stable measurement results

Arangeofcriticalfeaturesmaximizereproducibilityandminimizemeasurement times. For example, the laser-assisted wafer height positioning system guarantees consistent and stable measurement results. This feature also makes it possible for 2830ZTtoanalyzefilmsonalargerange of substrate materials in additiontoSiwafers,includingpiezo-andpyroelectric,glassandquartzsubstrates.

21

Sc44.96

4.0880.395

4.4600.400

THE PERIODIC TABLE OF THE ELEMENTS - WDXRF

R2O/RH

IA RO/RH2

IIA R2O3

IIIB RO2

IVB R2O5

VB RO3

VIB R2O7

VIIB VIII R2O

IB RO

IIB R2O3

IIIA RO2/RH4

IVA R2O5/RH3

VA R2O7/RH

VIIA

LA

1

2

3

4

5

6

7

1

2

3

4

5

6

RO3/RH2

VIA

11

Na22.990

1.041 1.067

55

Cs132.905

30.5814.286

34.9814.619

3

Li6.941

1

H1.008

19

K39.098

3.312 3.589

37

Rb85.47

13.3731.694

14.9591.752

87

Fr(223)

85.11012.029

97.46014.768

56

Ba137.33

32.0624.465

36.3724.827

88

Ra226.02

87.41912.338

100.1115.233

12

Mg24.31

1.253 1.302

20

Ca40.08

3.6900.341

4.0120.345

38

Sr87.62

14.1401.806

15.8331.871

21

Sc44.96

4.0880.395

4.4600.400

39

Y88.906

14.9311.922

16.7351.995

22

Ti47.90

4.5080.452

4.9310.458

40

Zr91.22

15.7442.042

17.6652.124

23

V50.94

4.9490.511

5.4260.519

41

Nb92.91

16.5812.166

18.6192.257

24

Cr52.00

5.4110.573

5.9460.583

42

Mo95.94

17.4412.293

19.6052.394

25

Mn54.94

5.8940.637

6.4890.649

26

Fe55.85

6.3980.705

7.0570.718

27

Co58.93

6.9240.776

7.6480.791

28

Ni58.71

7.4710.851

8.2630.869

29

Cu63.55

8.0400.930

8.9040.950

30

Zn65.37

8.6301.012

9.5701.043

31

Ga69.74

9.2411.098

10.2631.125

32

Ge72.59

9.8741.188

10.9801.218

33

As74.92

10.5301.282

11.7241.317

34

Se78.96

11.2071.379

12.4941.419

35

Br79.904

11.9071.480

13.2891.526

43

Tc98.91

18.3252.424

20.6152.536

2

He4.003

10

Ne20.179

0.848

18

Ar39.948

2.957 3.190

36

Kr83.80

12.6311.586

14.1101.636

54

Xe131.30

29.6664.109

33.619–

86

Rn(222)

82.84311.725

94.85014.313

72

Hf178.49

55.3827.898

63.2229.021

LA

89

Ac(227)

89.77312.650

102.8315.710

93

Np237.05

99.40713.942

113.7217.747

94

Pu(239)

101.8614.276

116.9418.291

95

Am(243)

104.4314.615

120.3518.849

96

Cm(247)

107.1414.953

122.7319.399

97

Bk(247)

109.9915.304

126.4919.961

98

Cf(251)

113.0015.652

127.7920.557

99

Es(254) 100

Fm(257) 101

Md(256) 102

No(254) 103

Lr(257)

13

Al26.98

1.486 1.557

14

Si28.09

1.739 1.836

15

P30.974

2.013 2.139

16

S32.064

2.307 2.464

17

Cl35.453

2.621 2.815

9

F19.000

0.677

8

O16.000

0.525

7

N14.007

0.392

6

C12.011

0.277

5

B10.81

0.183

4

Be9.012

0.109

0

44

Ru101.1

19.2332.558

21.6532.683

45

Rh102.905

20.1652.696

22.7202.834

46

Pd106.4

21.1212.838

23.8152.990

47

Ag107.87

22.1012.984

24.9383.150

48

Cd112.41

23.1063.133

26.0913.316

49

In114.82

24.1363.286

27.2713.487

50

Sn118.69

25.1913.443

28.4813.662

51

Sb121.75

26.2713.604

29.7213.843

52

Te127.60

27.3773.769

30.9904.029

53

I126.90

28.5083.937

32.2894.220

73

Ta180.95

57.0988.145

65.2129.342

74

W183.85

58.8568.396

67.2339.671

75

Re186.2

60.6488.651

69.29810.008

76

Os190.2

62.4778.910

71.40110.354

77

Ir192.2

64.3399.174

73.54810.706

78

Pt195.09

66.2419.441

75.73511.069

79

Au196.97

68.1779.712

77.97111.440

80

Hg200.59

70.1549.987

80.24011.821

81

Tl204.37

72.16710.267

82.56212.211

82

Pb207.19

74.22110.550

84.92212.612

83

Bi208.98

76.31510.837

87.32813.021

84

Po(209)

78.45211.129

89.78113.445

85

At(210)

80.62411.425

92.28713.874

90

Th232.04

92.17412.967

105.5916.199

91

Pa231.04

94.62713.288

108.4116.699

92

U238.03

97.13113.612

111.2817.217

57

La138.91

33.2994.650

37.7955.041

58

Ce140.12

34.5664.839

39.2515.261

59

Pr140.91

35.8605.033

40.7415.488

60

Nd144.24

37.1825.229

45.2645.721

61

Pm(147)

38.5325.432

43.8185.960

62

Sm150.35

39.9115.635

45.4056.204

63

Eu151.96

41.3205.845

47.0306.455

64

Gd157.25

42.7576.056

48.6886.712

65

Tb158.92

44.2666.272

50.3746.977

66

Dy162.50

45.7246.494

52.1107.246

67

Ho164.93

47.2536.719

53.8687.524

68

Er167.26

48.8136.947

55.6727.809

69

Tm168.93

50.4067.179

57.5068.100

70

Yb173.04

52.0307.414

59.3568.400

71

Lu174.97

53.6877.654

61.2728.708

Difficult to measure with X-rays

Measured usingK-lines

Measured usingL-lines

Z

Z

Z

11

Na22.990

Sodium

1.041 1.067

12

Mg24.31

Magnesium

1.253 1.302

9

F19.000

Fluorine

0.677

8

O16.000

Oxygen

0.525

7

N14.007

Nitrogen

0.392

6

C12.011

Carbon

0.277

5

B10.81

Boron

0.183

Thekeyfeaturestomaximizingsensitvity and stability of 2830 ZT for light elements include:

• 4kWoutputSST-mAX,operatingatahigh current of 160 mA

• Dedicatedhighperformancechannelsfor light elements in the range from boron to magnesium

• Dry(oil-free)pumpsmaintainingaclean,sub-Pascalvacuumwithinthemeasurement chamber

2830 ZT

Fast and cost-effective multi-layer analysis

Powerful Fundamental Parameter analysis

PANalytical’sFundamentalParameter(FP)softwarepackage,FPMulti,isfullyintegratedintotheSuperQthinfilmplatform of the 2830 ZT. It enables the direct calculation of chemical composition and thickness of layered materialsandisidealforanalyzingboth single layer thin films and complex multi-layer film stacks.

Analysis of stacks up to 16 layersFPmodelingallowsreliablethinfilmanalysis.PANalytical’sbest-in-classalgorithms model X-ray fluorescent behavior of the elements to calculate precise layer composition and thickness. This reduces the time and cost involved in setting up thin film and multi-layer analyses.Systemcalibrationrequiresonly a minimum number of reference samplestoanalyzecomplexstacksofupto 16 layers.

Simultaneous measurement of up to 24 elementsThe 2830 ZT can be fitted with up to 24fixedmeasurementchannels,fromboron onwards. These high performance channels allow for multi-layer analysis according to specific user requirements. Furthermore, as new channels can be added at any time, the 2830 ZT offers powerful flexibility, allowing the user to keep up with the latest technologies.

Keep track of your stack

FP Multi allows analysis of complex stacks in an easy and straightforward manner. Stacks can be simulated at the touch of a button, allowing the user to determine which lines should be used in the analysis.

CoNiFeTaCoFeTaCuNiFe

Fast and cost-effective multi-layer analysis

PANalytical’s SuperQ software makes it simple to set up spot patterns for uniformity measurement over the full surface area of wafers up to 300 mm.

Measurement programs are quickly selected via clearly labeled “speed buttons” on the built-in touch screen monitor.

Intuitive operation

The2830ZTutilizesPANalytical’sprovenSuperQThinFilmsoftwareplatform. This powerful, easy-to-use thin film data collection and analysis package is renowned for its highly intuitive interface and menu. It enables simple setup of standard measurement protocolsandindividuallycustomizedprograms. User-assigned function keys orlargeon-screen‘speedbuttons’permit rapid initiation of measurement for single wafers or complete batches.

Uniformity patterns and wafer maps are easily defined with user-friendly spotlocationselection.Click-and-dragcommands allow straightforward comparison with international wafer configuration standards.

Seamless fab integration

Efficient, compact system design Withafootprintcomparabletothatof200mmXRFwaferanalyzers,the2830 ZT occupies a minimum amount of valuable cleanroom space. A very narrow face print contributes further to space savings. The 2830 ZT can even be flush-mounted into a cleanroom wall, leaving only the loading port panel apparent within the workspace.

In accordance with normal fab procedures, the 2830 ZT measures wafers in a surface-up orientation. A transferrobotandnotch/flatalignmentunit position samples on the x-y wafer stage. Vacuum pumps can be installed remotely for convenient maintenance.

The system integrates readily into plant-wide process control and quality assurancenetworks,usingSECS/GEMprotocols to communicate with the host computer.

From manual wafer loading to full automation2830 ZT accepts 100 mm to 300 mm wafers, and smaller wafers or fragments can be measured using adaptors. To ensure integration into any fabrication environment, various wafer-handling options are available:

• Manualloading• Opencassetteloadingwiththerobot

in the cleanroom atmosphere• SingleordualFOUPloadingwith

robotandalignmentunitinanISOclass 1 mini-environment

• SingleordualSMIFloadingwithrobotandalignmentunitinanISOclass 1 mini-environment

• AnycombinationofSMIF,FOUPandopen cassette loading

SingleloadportFOUPandSMIFsystems can be equipped with an internal reference position which can harbor a cassette with frequently used reference wafers. The reference position accommodatesthreewafersizesinarange of 100 to 300 mm.

2830 ZT

Seamless fab integration

Compliance to all relevant standardsPANalytical’sPW2830wasthefirstX-ray metrology system to comply with all 300 mm standards. This led to its rapid establishment as the system of choice for automated waferanalysis.Now,the2830ZTbuilds on this reputation, and is designed to accommodate all relevant industry norms and standards.

Importantly, the 2830 ZT is fullycompliantwithSECS/GEM(SemiconductorEquipmentCommunicationStandards/GenericEquipmentModel),GEM300,andAMHS(AutomaticMaterialHandlingSystem).

Completing the solution

Metrology accuracy, reproducibility and repeatability are essential for accurate resultswithinafab.However,manyorganizationsoperatefabsatmultiplelocations.Withdifferentfabsmakingthe same product, consistency of results is essential. 2830 ZT can be placed at different fab locations and matched to a‘goldstandard’referencetoolusingauniversal set of reference wafers.

This provides easy multi-production line quality control of thin film deposition and other processes. Excellent tool matching is the result of the high quality optical components, in combination with robust software algorithms.

2830 ZT

Excellent tool matching

Completing the solution

PANalyticalunderstandstheimportanceof continuity in production control. The 2830 ZT is based on proven concepts, establishedthroughoutthecompany’sXRF thin film metrology product line.

However,technologyisonlypartofa successful process control solution. Tomakesurethatusersmaximizethebenefitofthe2830ZT,PANalyticalprovides excellent technical, software and application support.

2830 ZT users can take advantage of a large knowledge base when creating new applications, training new users, or solving technical issues.

PANalyticaltakesgreatprideinofferingoutstanding customer service, and values the trust users repeatedly place intheorganization.Arangeofservicecontracts,including24/7coverageinmost areas, is available, delivered by the largest X-ray support and service force in the market.

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PANalytical B.V.Lelyweg1,7602EAAlmeloP.O.Box13,7600AAAlmeloTheNetherlandsT +31(0)546534444F +31(0)546534598info@panalytical.comwww.panalytical.com

Regional sales offices

AmericasT +15086471100F +15086471115

Europe, Middle East, AfricaT +31(0)546834444F +31(0)546834499

AsiaPacificT +6567412868F +6567412166

Global and near

PANalytical PANalyticalistheworld’sleadingsupplierofanalyticalinstrumentationandsoftware for X-ray diffraction (XRD) and X-ray fluorescence spectrometry (XRF), withmorethanhalfacenturyofexperience.Thematerialscharacterizationequipment is used for scientific research and development, for industrial process control applications and for semiconductor metrology. PANalytical,foundedin1948aspartofPhilips,employsaround1000peopleworldwide.ItsheadquartersareinAlmelo,theNetherlands.FullyequippedapplicationlaboratoriesareestablishedinJapan,China,theUSA,andtheNetherlands.PANalytical’sresearchactivitiesarebasedinAlmelo(NL)andonthecampusoftheUniversityofSussexinBrighton(UK).SupplyandcompetencecentersarelocatedontwositesintheNetherlands:Almelo(developmentandproduction of X-ray instruments) and Eindhoven (development and production of X-ray tubes). A sales and service network in more than 60 countries ensures unrivalled levels of customer support. ThecompanyiscertifiedinaccordancewithISO9001:2000andISO14001.

The product portfolio includes a broad range of XRD and XRF systems and software widelyusedfortheanalysisandmaterialscharacterizationofproductssuchascement, metals and steel, nanomaterials, plastics, polymers and petrochemicals, industrial minerals, glass, catalysts, semiconductors, thin films and advanced materials, pharmaceutical solids, recycled materials and environmental samples.

Visit our website at www.panalytical.com for more information about our activities.

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