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A Trace-Embedded Coreless Substrate Technique Chang-Yi(Albert) Lan, 藍章益 SPIL (Siliconware Precision Industries Co., Ltd) No. 153, Sec. 3, Chung Shan Rd, Tantzu Dist, Taichung, Taiwan, R.O.C.

A Trace-Embedded Coreless Substrate Technique - SEMI Global Summit 2013... · A Trace-Embedded Coreless Substrate Technique Chang-Yi(Albert) Lan, 藍章益 SPIL (Siliconware Precision

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A Trace-Embedded Coreless Substrate Technique

Chang-Yi(Albert) Lan, 藍章益

SPIL (Siliconware Precision Industries Co., Ltd) No. 153, Sec. 3, Chung Shan Rd, Tantzu Dist, Taichung, Taiwan, R.O.C.

Outline

• Introduction of Embedded Technology

• Package Features & KEY Drivers

• Challenges & its Solutions

• Future Developing Roadmap

• Conclusions

Outline

• Introduction of Embedded Technology

• Package Features & KEY Drivers

• Challenges & its Solutions

• Future Developing Roadmap

• Conclusions

NOW

Thinner & Lighter Form Factors Outstanding Battery Life

Better Performance

Smartphone Evolution

Smartphone

9.3mm 7.6mm 140g 112g

Mobile Phone is going for several KEY features, including longer battery life, better performance with more functions, and small form factors (thinner & lighter).

Smartphone panel size will continue to increase, but thickness continue to decrease. Battery volume can only remained relatively SAME due to small factor constraints.

9.3mm 7.6mm 140g 112g

System Volume vs. Battery Volume Area vs. Thickness

Smartphone Thickness/Area Trend

Source: PRISMARK , 2013, Jan.

115.2x58.6 mm 123.8x58.6 mm

3.5” 4.0”

Advantages of Embedded & Coreless Technology

Portable Devices becoming smaller, thinner, and more complex driving the advantages of Embedded & Coreless Technology

PCB

C R L

PCB

IPD

Core ETS Coreless Substrate

Embedded Technology

Types of Embedded Technology

Embedded Passive

Embedded Active Die

Die Die

Embedded IPD

Embedded Trace

Embedded Technology

Types of Embedded Technology

Embedded Passive

Embedded Active Die

Die Die

Embedded IPD

Embedded Trace

Today!!!

4

Source: PRISMARK , Unimicron , 2013, Aug.

WHY EMBEDDED TRACE? 612.3/018KK

CORE

Normal Sub.

Embedded Sub.

PP

Outline

• Introduction of Embedded Technology

• Package Features & KEY Drivers

• Challenges & its Solutions

• Future Developing Roadmap

• Conclusions

Wire Bond / Flip Chip Type Package Structures

Package Characteristic:

– Using mold compound/Pre-preg material & lead-frame to build up

“Embedded trace” & “coreless” substrate.

– It allows lead-frame as routable traces Flexible I/O layout.

Wire Bond Type Package Flip Chip Type Package

Die

Bonding wire Compound

Package Features

Embedded trace & coreless substrate

Cu Pillar Bump

Die

Compound

Die

Die

Shrink PKG size by Design

– Design capability can shrink package size for low cost and small form factor

128 IO : TQFP 14X14 10x10 ( Due to Routable Trace)

256 IO : LQFP 24X24 12X12 or 13x13

– Flexible I/O layout and package outline as same as TFBGA.

TQFP 128, 14x14 DR-QFN 128, 12x12 Embedded Trace

128, 10x10

Product Drivers

Better Electrical Performance (Based on same 10*10mm2 PKG size)

Better Thermal Performance (Based on same 10*10mm2 PKG size)

Compared with QFN (w/ longer wire length), Product has much shorter wire length and better electrical performance.

Compared with TFBGA, Product has thicker stud via Cu volume and has much better thermal performance.

Product Drivers - continue

Product Sweet Spot (for Wire Bonding)

Mainly compete with current substrate based products(TFBGA)

Product Sweet Spot: Area III (8x8~15x15mm Body Size; 100~400 I/O Range)

Is working on bigger PKG size up to 18*18mm

PKG Size

I/O

100

200

300

6x6 12x12 18x18 3x3 9x9 15x15

400

500

x x x x x x x x

x x

x

x

x

x x

x x

x x

x

x x

x x

o o o x

o

o o

o

o o o

o o

o o o o

o

o o

o o

o o

o

Multi-row QFN sweet spot

DR-QFN

Body size v.s. I/O count Product

QFN

Under development

TFBGA

III

II I

FC type Sweet Spot: Area II (4x4~15x15mm Body Size ; 52~600 I/O Range)

– In sweep spot area, FC type product can replace FCCSP for low cost solution.

III II

I

Product Sweet Spot (for Flip Chip)

Outline

• Introduction of Embedded Technology

• Package Features & KEY Drivers

• Challenges & its Solutions

• Future Developing Roadmap

• Conclusions

Flip-Chip Substrate

(1)

(2)

Metal Carrier Pre-treatment

(Cu plating) Image transfer (For top trace)

Cu plating (1st layer)

Image transfer (For ball pad)

Cu plating (2nd Cu layer)

Dry Film Stripping Molding Window Etching and OSP coating

(1). Bottom view of real sample

(2). Side view of diagram

Pre-mold/Pre-PregLead-frame Process

– Using lithography and Cu plating on a carrier purposely to create routable lines.

– Plating Line(PL) and None Plating Line(NPL) all can design in.

Substrate Process Flow

(Cu trace + Pre-Mold)

same as (Cu trace + PP + S/M)

Embedded Trace & Coreless substrate

Supporting Frame

Mold Compound

Unit

Top side (1/4 Bock)

Back side (1/4 Bock)

Assembly Process Flow

Assembly Process Flow

FC – Type Product

Wafer Grinding / Saw Die Attach

PMC

B/P

S/G FVI

Packing / Shipping

Molding Marking

Confidential

PKG Comparison (Embedded Trace v.s. SAP)

ETS SBT Normal FCCSP SBT

Coreless Core

Lower Higher

much earlier induce non-wetting issue due to

poor warpage

more difficult induce non-wetting issue due to

better warpage

Trace below base line Trace above base line

Much earler to achieve finer L/S for more

routine-ability space

More difficult to achieve finer L/S for more

routine-ability space

Poor GoodNon-Wetting

Performance

Etch Process

Routine-ability

Photo

Item

Feature 1

Photo

Feature 2

Warpage

Cost

DF

Seed Layer

Seed Layer Etching

After Etching

Etchant

Etchant

15

15

15

5

PP Core

Process (PKG: 1.2mm)

Risk Level Risk Item

Die Attach ---

Wire Bonding ---

Molding * Warpage

Ball Placement ---

Final Inspection ---

Reliability Test ---

0

Process Risk Assessment & 1st ENG Run

Process Risk Assessment

Conclusion : Warpage issue is major concern. Actions : Go simulation & DOE study by different Pre-mold & Molding compound to find out better BOM material.

0

2

0

0

0 PCB Board

Warpage Schematic

Silicon

Substrate

116100

68

28

-15-40

-57 -62-49

-23

27

67

106135 140

-100

-50

0

50

100

150

200

28C 50C 100C 150C 183C 217C 245C 260C 245C 217C 183C 150C 100C 50C 32C

Sign

ed

War

pag

e [

um

]

Avg

SPEC: HT <=80um (=3.1mils) RT <=100um (=4mils)

1st ENG run

Warpage Simulation

Simulation Result

Simulation Results :

•Package Information :

•Package size: 13 mm x 13 mm

•Die size: 5 mm x 6 mm

Leg 1 2 3 4 5 6 9 10 11

Compound material MC-A MC-B

Tg (℃) 130 130

CTE (ppm/C) High Low

E (kg/mm2) Low High

Pre-mold material Pre-A Pre-B Pre-C Pre-A

Compound thickness (mm) 0.75 0.77 0.81 0.77 0.77 0.77

Die thickness (mil) 8 10 12 10 12 10 12 12 12

Simulation warpage (mil) +2.57 +2.25 +2.11 +2.24 +2.09 +2.29 +2.15 +2.17 +1.10

Pre-mold Pre-A Pre-B Pre-C

Tg (℃) 170 170 180

CTE (ppm/C) Low High Medium

E (kg/mm2) High Medium Low

Base on simulation, low CTE & high modulus of Pre-A and MC-B can get better warpage performance.

Simulation model

Pre-mold MC-A MC-B

Tg (℃) 130 130

CTE (ppm/C) High Low

E (kg/mm2) Low High

MC

Pre-mold

DOE for Warpage Performance

Screen DOE Result

Leg Pre mold

Type Compound

Type

Warpage Performance

Criterion Max Min Avg Stv Cpk

1 Pre-A MC-A 2.7 2.83 1.03 1.68 0.30 1.15

2 Pre-A MC-B 2.7 2.47 0.78 1.40 0.33 1.68

3 Pre-B MC-A 2.7 2.99 1.17 1.72 0.38 1.09

4 Pre-B MC-B 2.7 2.51 0.67 1.42 0.36 1.52

5 Pre-C MC-A 2.7 2.89 0.96 1.59 0.38 1.06

6 Pre-C MC-B 2.7 2.47 0.90 1.42 0.39 1.34

Base on DOE result, MC-B can get better warpage performance than MC-A (which

is aligned with the simulation data) since “MC” is much thicker than “Pre-mold”.

MC (thicker)

Pre-mold

Item 25 125 150 183 220 260 220 183 150 125 25

w/ 8mil die 2.5 2.0 2.0 1.3 0.8 -1.0 0.7 1.2 2.0 2.1 2.5

w/ 12mil die 2.5 2.0 1.9 1.4 0.9 -0.9 0.9 1.3 1.8 2.0 2.5

Crying (-)

Smiling (+)

Sign direction

Package information:

Package size 13x13 mm2

Device Name xxxx

Warpage measurement:

Test Result

– The result can meet criteria: < +/-4 mils (R/T) and <3.1mils(H/T)

after selecting Pre-A(as pre-mold) and MC-B(mold compound).

High Temp Shadow Moire Test

SPEC: HT <=80um (=3.1mils) RT <=100um (=4mils)

Board Level Reliability Test (for PP+S/M substrate)

Solder joint crack Solder joint crack

Test Result

The Drop test passed >30X, and TCT test passed >1000X

Board Level Reliability Test (for Pre-Mold substrate)

Solder crack

Test Result

The Drop test passed >30X, and TCT test passed >500X

Need to improve TCT performance!!!

Solder crack

Board Level TCT Improvement

Using Different Solder Ball for TCT Test Improvement

Type of Solder Ball

A (Data1)

B (Data2)

Baseline

C (Data3)

Composition

Ball-A (higher Ag% &

dopping)

Ball-B Ball-C

First Failure

1025 696 578

Characteristic Life

1117 980 870

Failure mode (Solder Crack)

Significant TCT capability improvement by using ball-A of solder ball

with higher Ag% w/ Bi & Ni doping (compared with ball-B PoR).

Board Level Drop Test

Using Different Solder Ball for Drop Test

Type of Solder Ball

A (Data1)

B (Data2)

C (Data3)

Composition Ball-A

(higher Ag% & dopping)

Ball-B

Baseline Ball-C

First Failure

47 65 92

Characteristic Life

270 376 363

Failure mode (Solder Crack)

Using Ball-A has a little worse drop performance than ball B & C, but still meet criteria.

Performance in Real Product

Device Information: Device: Application Processor Package: 12*12~15*15mm2

Quality check item _PASS

Item Measured Method Criteria Unit

Wire-pull WP tester >3 g

Ball-shear BS tester >8 g

Ball- size Microscope 500X 38+/-2 um

Al splash Microscope 500X <43 um

Ball -thickness Microscope 500X 8+/-2 um

Cratering Microscope 200X Not allow Crack

IMC Microscope 500X >80%

2nd Level Test

Drop test 30 times PASS

TCT 1000 PASS

BOM Substrate : Trace/Space – 25/35um Bonding Wire : 0.7mil CuPd & Ag wire Compound : XXXX Solder Ball : XXXX

FT Result

FT yield is compatible PASS on-board speed test

Reliability Test Items

MSL : Level 3a (60℃ / 60%RH / 40hrs) uHAST 96/192, PASS (45/45 units) TCT 1000, PASS (45/45 units) HTSL 1000, PASS (45/45 units)

Outline

• Introduction of Embedded Technology

• Package Features & KEY Drivers

• Challenges & its Solutions

• Future Developing Roadmap

• Conclusions

Package Roadmap

Roadmap: Wire Bond Flip Chip Hybrid (Wire bond + Flip Chip) PKG Structure: Single Die Stacked Die or Side-by-Side Hybrid or High Thermal Thickness Reduction: 1.2mm 1.0mm 0.8mm

Package Development Wire Bond Technology Performance

2013~2015 Production

CuPd Wire

Ag alloy Wire

Package Height

0.8/0.7 mm

1.0 mm

1.2 mm

Single Die

Stacked Die or Side-by-Side

More Dies, Mult-Pkg

Small Form Factor

Available

Hybrid type(WB+FC)

High Thermal

FC type

FC Type - Test Vehicle

Package Dimension:

Package size: 12*12~15*15 mm2

Mold thickness: 0.45mm

Ball stand off height: 0.18mm

Substrate thickness: 0.12mm

Bump pitch : 105um

BOM:

Bump composition: Cu pillar

Ball size /ball pitch : 0.25 / 0.4mm

Substrate

Substrate

32

Process Checking Items Criteria Sample Size Result

Die Bond

Non-wetting Not allow 100% Pass

Stand-off Height ±10% 4pcs/Lot Pass

Accuracy ±15um 4pcs/Lot Pass

Under-fill

Bleeding on chip <1.0mm 100% Pass

Fillet Height ≧1/2 chip thk. 100% Pass

Void ≦1% chip area 100% Pass

De-lamination Not allow 100% Pass

Molding Strip war-page <4mm 100% Pass

De-lamination Not allow 100% Pass

Inline Assembly

Reliability Test

FC Type -TV Internal Qualification PASS.

Condition Read point Judge Method Result

MSL3 /260 ℃ Post reflow 3X SAT ; O/S Pass

TCT (-65~150 ℃) 500X O/S test Pass

1000X O/S test Pass

HAST ( 130 ℃ / 85% RH ) 168hrs O/S test Pass

HTSL (150 ℃) 1000hrs O/S test Pass

Drop test 30X O/S test Pass

X-ray top view

X-Section (0hr) X & Y-direction

Y X

FC Type - Test Vehicle

PKG Structure FCCSP FC type FO

POD

Ball I/O 488 488 488

Body size 12*12 12*12 12*12

Trace L/S (um) 25 / 25 15 / 15 10 / 10

Substrate layer 2L 2L 2L

Min. PKG Height (mm) 0.90 0.7 0.55

Performance Ranking

Electrical

Thermal Dissipation

Cost Ranking High Low Low-Medium

FC Type PKG Benchmark

FC Type can provide the competitive device performance with lower cost benefits.

Outline

• Introduction of Embedded Technology

• Package Features & KEY Drivers

• Challenges & its Solutions

• Future Developing Roadmap

• Conclusions

Conclusions

• PKG Warpage performance can be improved by selecting the mold compounds

or Pre-preg material with the “fit” properties(ie. CTE or Modulus) .

• Board level reliability tests can be obviously improved by “fit” solder ball types.

• As a low cost PKG and small form factor solution, a PKG with routable

embedded trace and coreless substrate features has been well demonstrated in

both of wire-bond and flip-chip PKG solutions.

More work on FC type PKG with finer pitch line width & space.

Contact Information:

[email protected]

藍章益

Solution Providing Innovative Leader