A Spectrum of Aerospace and Defense Solutions

M/A-COM Technology Solutions

A Spectrum ofAerospace and

Defense Solutions

macomtech.com

Discrete Components, MMICs and Integrated Modules

Radar+EW brochure_Sep2011_r2-092611.qxd:Layout 1 9/28/11 8:35 AM Page 1

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A Spectrum of Aerospace and Defense Solutions

Aerospace and defense applications require a diverse suite of RF components thatsupport a broad range of system architectures. From military communications to radarand sensing to electronic warfare, today’s battlefield systems require high performance,the utmost in reliability and affordability to provide our warfighters with the tools theydeserve. M/A-COM Technology Solutions has supported the demanding needs of theaerospace and defense more than 60 years. Our engineers understand and deliverthe performance that keeps our warfighters safe. M/A-COM Tech offers a broad rangeof products and technical capabilities that meet today’s aerospace and defenserequirements support systems with both standard and custom solutions.

M/A-COM Tech uses high volume, dual use processes to create aerospaceand defense applications:• Si bipolar, LDMOS, and GaN power transistors• Si, GaAs and AlGaAs diodes• GaAs MESFET and pHEMT-based MMICs• Hybrid components—both passive and active• Hermetic and printed circuit board-based modules and assemblies

Our extensive design experience, coupled with our assembly and automatedtest capability, makes M/A-COM Tech uniquely qualified to address the most demandingaerospace and defense specifications.

About M/A-COM Technology Solutions Inc.

M/A-COMTechnology Solutions (macomtech.com) is a leading supplier of high performanceanalog semiconductor solutions for use in radio frequency (RF), microwave, and millimeterwave applications. Recognized for its broad portfolio of products, M/A-COMTech servesdiverse markets including CATV, wireless infrastructure, optical communications, aerospaceand defense, automotive, industrial, medical, and mobile devices. M/A-COMTech builds onmore than 60 years of experience designing andmanufacturing innovative productsolutions for customers worldwide.

Headquartered in Lowell, Massachusetts, M/A-COMTech is certified to the ISO9001international quality standard and ISO14001 environmental management standard.M/A-COMTech has design centers and sales offices throughout North America, Europe,Asia and Australia.

IntegratedModules and Discrete Componentsfor Radar and EW Applications

Quality and Reliability

The goal of M/A-COMTechnology Solutionsis to continually deliver effective, high qualityproducts and services that meet ourcustomers’and internal operations’needsin terms of delivery, performance, safetyand value.

Process controls are implemented such thatthe tasks are performed properly the firsttime, so that products and services meetestablished, agreed-to requirements.

It is the personal responsibility of everyemployee to ensure quality, customersatisfaction, continual improvement,maintenance of our quality managementsystem and compliance with customerand regulatory requirements. 3

Table of Contents

Military Communications

4 Solutions for Challenging MilitaryCommunications Applications

5 High Power MELF PIN Diodes6 High Performance SurfaceMount VCOs7 UHF and VHF High Power

Transistors and Modules10 RF and Microwave Broadband

Components for MILCOM and Radar

MillimeterWave and EW

12 High Frequency andUltra Broadband Solutions

13 High Performance AlGaAsPIN Diode Switches

Radar

14 Affordable Aerospaceand Defense Solutions

15 High Power GaN Transistors16 Components for Phased Array

Applications18 High Power Bipolar RF Transistors

and Pallets19 Digital Phase Shifters for

Active Antennas


Solutions for ChallengingMilitary Communications Applications

Military Communications Products

M/A-COMTechnology Solutions offers a broad portfolio of standard products whichsupport military and public radio applications.Whether for the transmit chain orthe receive chain, M/A-COMTech creates compelling components for thisdemandingmarket:

• Silicon-based power transistors andmodules• MMIC-based amplifiers and control components• Hybridmixers, couplers, transformers/baluns, power dividers, modulatorsand demodulators

For more details, contact your M/A-COMTech sales office or visit macomtech.com

M/A-COM Technology Solutions Inc.

Lowell, Massachusetts 01851• North America 800.366.2266• Europe +353.21.244.6400• India +91.80.43537383• China +86.21.5108.6464

macomtech.com

MMIC Amplifiers and Modules(HBT, pHEMT, MESFET)

MMIC Amplifiers and Modules(HBT, pHEMT, MESFET)

Attenuators: Variable and Digital(MMIC and PIN)Discrete Diodes

(Varactor and Schottky)

Power Transistorsand Amplifier Modules

T/R Switches(GaAs MMICs, Diode ICs

and Discretes)

E-Series MixersE-Series Passives

LowPhase NoiseVCOs

4




macomtech.com

High Power MELF PIN Diodes

250 V PIN Diode CMOS Driver


M/A-COMTechnology Solutions high powerMELF PIN diodes are well suited for thedemanding needs of today’s military radio systems. Our PIN diodes have been deployedin numerous battlefield radios for many years, providing the performance and reliabilityrequired for critical warfighter communications. MELF PIN diodes are:

• Ideal for applications from DC to 1GHz• Surfacemount hermetic package with low RF resistance (RS) and thermal resistance(θ)—the ultimate choice for power switch applications

• High breakdown voltage (VR)—ideal for high peak voltage applicationssuch as vehicular mounted radios

• Low distortion vs. forward current—optimal for stringent attenuator applications• Available in tape and reel for high volumemanufacturing• EAR99


MA4PH235-1072T 35 0.5 1.2 20MA4P1450-1091T 50 0.75 2.5 5MA4P1250-1072T 50 0.75 1.2 15MA4P4001F-1091T 100 0.5 2.2 20MA4P7101F-1072T 100 0.5 1 50MA4P7001F-1072T 100 0.8 0.7 50MA4P4301F-1091T 100 1 2 30MA4P4002F-1091T 200 0.5 2.2 20MA4P7102F-1079T 200 0.5 1.0 50MA4P7002F-1072T 200 0.9 0.7 50MA4PH236-1072T 200 3 0.5 25MA4P7104F-1072T 400 0.5 1 50MA4P506-1072T 500 0.3 1 10MA4P505-1072T 500 0.45 0.65 6MA4P504-1072T 500 0.6 0.5 15MA4P4006F-1091T 600 0.5 2.2 20MA4P7006F-1072T 600 0.9 0.7 50

To be released Early 2012 Forward Reverse CMOS LogicBias Bias Control

Part Number Current Voltage Voltage Package(mA) (V) (V)

MADR-010574 200 250 3 or 5 7 mm PQFN

5

Note: Part numbers are RoHS compliant

Detailed specifications for our standard parts can be found quicklyon our website at macomtech.com by typing the part number into the search box.All specifications are subject to change.


High Performance Surface Mount VCOs


M/A-COMTech surfacemount VCOs support applications from 45MHz to 4 GHz. They areideal for military and privatemobile radios. In addition to these state-of-the-art VCOs,M/A-COMTech also offers a broad range of diodes, transistors, MMICs, and passive products—a comprehensive solution set for military communications.

Our VCOs feature:• Low phase noise—Our specialty• Factory tested—Every part (Ensures the performance you require)• Cost—Extremely competitive• EAR99

For more details, contact your M/A-COMTech sales office or visit macomtech.com/VCOs

FrequencyPart Number (MHz)

VCOType

(Band)

TuneVoltage

(V)Min Max

Phase NoiseSSB (dBc/Hz) @

Offset Freq Typical10 kHz 25 kHz 1 MHz

TuningSensitivity(MHz/V)

PowerSupply

Vcc (V) Ic (mA)Nom Max

TempRange (°C)

Min Max

PackageStyle

PowerOutput(dBm)

Min Max

MAVC-010000-000458 433 - 484 3 7 0.5 10 -126 -134 -164 6 5 30 -30 85 Single LSM1

MAVC-130000-000534 490 - 580 -4 0 2.5 10.5 -124 -133 -161 6 5 30 -30 85 Dual LSM13

MAVC-110000-000626 536 - 716 0 3 0.5 11.5 -115 -124 -156 9.5 4.8 17 -30 85 Dual LSM11

MAVC-150000-000784 762 - 806 0 6 2 12 -125 -134 -164 5 5 25 -30 70 Single LSM15

MAVC-150000-000824 806 -841 0 6 2 12 -125 -134 -164 4 5 25 -30 70 Single LMS15

MAVC-150000-000856 841 - 871 0 6 2 12 -125 -134 -164 3.5 5 25 -30 70 Single LSM15

MAVC-130000-000986 896 - 1076 -4 2 2.5 10.5 -114 -124.5 -156 11 4.8 13 -40 85 Dual LSM13

MAVC-170000-001404 1399 -1410 -4.5 1.5 0.5 2.5 -102 -110 -142 12 2.5 10 -40 85 Single LSM17

MAVC-110000-001632 1445 - 1820 -3 3 2 15 -112 -121 -155 17 5 30 -30 85 Single LSM11

MAVC-110000-001802 1516 - 2088 -3 3 0.5 15 -109 -119 -151 22 4.8 20 -30 85 Dual LSM11

MAVC-170000-001620 1520 -1720 -5 3 0.7 4.3 -100 -108 -140 65 2.5 20 -25 70 Single LSM17

MAVC-170000-001946 1845 - 2045 -5 3 0.7 4.4 -99 -108 -140 65 2.5 20 -25 70 Single LSM17

MAVC-140000-002304 2304 4 9 0.5 5 -116 -126 -153 9 5 50 0 85 Single LSM14

14

10

5

2

4.012.7

12.7

0.0

3.0

5.5

8.0

10.512.7

0.0

2.2

4.7

7.2

9.7

12.7

0.0

2.2

4.7

7.2

9.7

12.7

1.5

0.8

11

12

9

6 7 8

16 15 13

1

3

4

14

10

5

2

7.012.7

12.7

0.0

3.0

5.5

8.0

10.512.7

0.0

2.2

4.7

7.2

9.7

12.7

0.0

2.2

4.7

7.2

9.7

12.7

1.5

0.8

11

12

9

6 7 8

16 15 13

1

3

4

14

10

5

2

5.5 12.7

12.7

0.0

3.0

5.5

8.0

10.512.7

0.0

2.2

4.7

7.2

9.7

12.7

1.5

0.8

11

12

9

6 7 8

16 15 13

1

3

4

0.0 2.2

4.7

7.2

9.7

12.7

8

1

2

3

7

6

5

4

2.9 MAXPIN 16.0

8.0

1 2 3 4 5

12 11 10 9 8

6

7

14

13

14.30

9.50

0.0

00.

261.5

0

4.0

4

6.59 9.13

11.6

712

.89

14.3

0

0.00

2.33

6.018.099.50

0.26

1.15x1.155.50 MAX

LSM112.7 x 12.7 x 4 mm

LSM1112.7 x 12.7 x 5.5 mm

1

5

10

13

5.5 12.7

12.7

0.0

3.0

5.5

8.0

10.512.7

0.0

2.2

4.7

7.2

9.7

12.7

1.5

0.8

4

3

6

9 8 7

15 16 2

14

12

11

0.0 2.2

4.7

7.2

9.7

12.7

nosoldermask

6.35 squarecentered

LSM1512.7 x 12.7 x 5.5 mm

LSM1314.3 x 9.5 x 5.5 mm

LSM1412.7 x 12.7 x 7 mm

LSM176.0 x 8.0 x 2.9 mm

A selection of our latest design releases is shown below.

6




macomtech.com

UHF andVHFHigh Power Transistors andModules


M/A-COMTechnology Solutions siliconMOS technology forms the foundation of our broadproduct portfolio of discrete UHF andVHF high power transistors andmodules. These devicesare ideal for transmit applications for military communications and privatemobile radios.Qualified toMIL-PRF-19500, these devices display the ruggedness and reliability requiredfor demanding battlefield applications.


MAPP-03040-100C2X (24-28 V)

MAPM-030400-060C00 (24-28 V)

MAPM-030400-010C00 (24-28 V)

MAPM-020512-100C28 (28 V)

MAPM-020512-040C00 (24-28 V)

MAPM-030088-020C12 (12-16 V)

MAPM-030512-010C24 (24 V)

MAPM-020512-010C00 (24-28 V)

20 30 88 400 512

200

100

60

40

20

10

7Frequency (MHz)

Power(W

)

RF Power Transistors: Bipolar

Frequency Operating Pout Minimum Gain Minimum Efficiency(MHz) Part Number Voltage (V) (W) (dB) (%) Package

1 - 30 MRF421 28 100 10 40 P208

1.5 - 30 MRF422 28 150 10 40 P208

1.5 - 30 MRF426 28 25 22 35 P-222

1.5 - 30 MRF428 50 150 13 45 P208

2 - 60 MRF429 28 150 13 45 P208

2 - 30 MRF448 50 250 12 45 P208

2 - 30 MRF454 12.5 80 12 50 P208A

2 - 30 MRF455 12.5 60 13 55 P-222

30 - 200 MRF314 28 30 10 50 P-222A

30 - 200 MRF316 28 80 10 55 P209

30 - 200 MRF317 28 100 9 55 P-210

Modules

7



Power Transistors: Bipolar


1 - 400 MRF313 28 1 15 45 P-227

30 - 500 MRF392 28 125 10 55 P-226

30 - 500 MRF393 28 100 9.5 55 P-226

150 - 400 MRF321 28 10 12 50 P-232

150 - 400 MRF323 28 20 10 50 P-221

225 - 400 2N6439 28 60 7.8 55 P209

100 - 500 MRF327 28 80 7.3 50 P209

850 - 1400 PH0814-40 28 42 6.8 40 BAL-3

Power Transistors: DMOS


2 - 88 FH2114 24 80 13 65 P-58

2 - 88 FH2164 12 8 13 55 P-82

2 - 175 DU1215S 12 15 9.5 60 P54

2 - 175 DU1230S 12 30 10 60 P54

2 - 175 DU1260T 12 60 8 60 P70

2 - 175 DU2805S 28 5 11 55 P54

2 - 175 DU2810S 28 10 13 55 P54

2 - 175 DU28120T 28 120 13 60 P-70

2 - 175 DU28120V 28 120 13 60 P-34A

2 - 175 DU28200M 28 200 13 55 P-25

2 - 175 DU2820S 28 20 13 60 P-54

2 - 175 DU2840S 28 40 13 60 P-54

2 - 175 DU2860T 28 60 13 60 P70

2 - 175 DU2860U 28 60 13 60 P-90

2 - 175 DU2880T 28 80 13 60 P-58

2 - 175 DU2880U 28 80 13 60 P-90

2 - 175 DU2880V 28 80 13 60 P34A

100 - 500 UF2805B 28 5 10 50 P-83B

100 - 500 UF28100H 28 100 10 50 BAL-3 (hermetic)

100 - 500 UF28100M 28 100 10 50 P-25

100 - 500 UF28100V 28 100 10 50 P-34A

100 - 500 UF2810P 28 10 10 50 P-82

100 - 500 UF28150J 28 150 8 55 P-84

100 - 500 UF2815B 28 15 10 50 P-83B

100 - 500 UF2820P 28 20 10 50 P-82

100 - 500 UF2820R 28 20 10 50 P-56

100 - 500 UF2840G � 28 40 10 50 SS-1E

100 - 500 UF2840P 28 40 10 50 P-82

100 - 1000 LF2802A � 28 2 10 40 SS-1D

100 - 1000 LF2805A � 28 5 10 50 SS-1D

100 - 1000 LF2810A � 28 10 10 50 SS-1D

Note: Part numbers are RoHS compliant � indicates non-RoHS compliant

Detailed specifications for our standard parts can be found quickly on our website at macomtech.com by typing the part number into the search box.All specifications are subject to change.8

UHF and VHF High Power Transistors and Modules (continued)



RF Power Transistors: TMOS


2 - 80 MRF154 50 600 17 45 P-214

2 - 80 MRF157 50 600 21 45 P-214

2 - 150 MRF140 28 150 15 40 P208

2 - 150 MRF150 50 150 17 45 P208

2 - 175 MRF141 28 150 18 40 P208

2 - 175 MRF141G 28 300 12 50 P-217

2 - 175 MRF148A 50 30 18 40 P-216

2 - 175 MRF151 50 150 13 40 P208

2 - 175 MRF151G 50 300 14 50 P-217

2 - 175 MRF173 28 80 11 60 P208

2 - 175 MRF173CQ 28 80 13 60 P209

2 - 200 MRF174 28 125 9 50 P208

2 - 200 MRF171A 28 45 17 60 P-216

2 - 225 MRF175GV 28 200 14 65 P-218

2 - 225 MRF176GV 50 200 17 55 P-218

2 - 400 MRF175GU 28 150 12 55 P-218

2 - 400 MRF134 28 5 11 50 P-222

2 - 400 MRF136 28 15 16 60 P-222

2 - 400 MRF136Y 28 30 14 54 P-215

2 - 400 MRF137 28 30 13 60 P-222

2 - 400 MRF175LU 28 100 10 55 P-225

2 - 400 MRF176GU 50 150 14 50 P-218

2 - 400 MRF177 28 100 12 60 P-226

2 - 500 MRF158 28 2 16 55 P-228

2 - 500 MRF160 28 4 16 55 P-221

2 - 500 MRF166C 28 20 13.5 50 P-204

2 - 500 MRF166W 28 40 14 50 P-202

2 - 500 MRF275G 28 150 10 50 P-218

2 - 500 MRF275L 28 100 8.8 55 P-225

MAGX-020512-025000 20 - 512 25 19

MAGX-020512-050000 20 - 512 50 19

MAGX-000035-010000 20 - 3500 10 12-30

MAGX-000035-030000 20 - 3500 30 12-30

MAGX-000035-100000 20 - 3500 100 12-30

MAGX-000035-150000 20 - 3500 150 12-30

GaN Transistors

Part Frequency Pout GainNumber (MHz) (W) (dB)

High Power GaN Transistors

M/A-COMTechnology Solutions is developinga full range of products utilizing GalliumNitride (GaN)on Silicon Carbide. GaN technology offersthe following advantages:

• Wider operational bandwidths• High voltage operation• Higher efficiency• Superior power density• Higher gain• Longer pulse widths• Easy to broadband

The GaN transistors in the table to the rightare scheduled to be released in 2011. 9

UHF and VHF High Power Transistors and Modules (continued)


RF and Microwave Broadband Componentsfor MILCOM and Radar

Commercial Off-The-Shelf (COTS)

M/A-COM Technology Solutions is a leading supplier of Commercial Off-The-Shelf (COTS)products for the aerospace and defense markets. Our broad product portfolio includesheritage-rich brands such as M/A-COM, Omni Spectra, Watkins-Johnson, and more.Our COTS products offer the same sophistication and performance as custom-designedproducts, but are available immediately. They are used in radar, communications,electronic warfare, andmissile guidance. Industry-wide, M/A-COMTech is recognized forthe high reliability performance of its component designs. We have a solid track recordin helping our customers reduce costs, shorten design cycles, and ramp up production.

• Strong global customer base• COTS products are commerce controlled EAR99• Lean manufacturing facilities in the US and Pacific Rim

M/A-COM Tech also offers customer-specific design capabilities. Environmentalscreening is available onmost products. Additionally, we offer expertise in replacementdesigns for obsolete or discontinued products. Our applications engineering supportteam is responsive, flexible, innovative, and ready to help you with your next project.


Class A Amplifiers

Frequency Part Gain Rev Isolation Noise VSWR P1dB OIP3 PhaseNoise Voltage Current(MHz) Number (dB) (dB) Figure (dB) In/Out (dBm) (dBm) (dBc/Hz) (Vdc) (mA) Package

-10 - 250 A70-2 8 11 2.2 1.9:1 19 38 -165 15 25 TO-8/SMT0-8/CA

5 - 300 A79 14 18 4.0 1.5:1 22 38 -165 15 88 TO-8/SMT0-8/CA

5 - 300 A59 11.8 16 3.9 1.6:1 22 36 -185 15 88 TO-8/SMT0-8/CA

5 - 500 AM-147-PIN 17 16 3.4 1.7:1 20 32 -170 15 52 TO-8-1/SMA

10 - 500 PA512 18 24 5.2 1.8:1 27.5 39 -165 15 200 TO-8/SMT0-8/CA

10 - 1000 A1021 26 35 3.8 1.4:1 14.5 26 -160 5 50 TO-8/SMT0-8/CA

10 - 1000 A19-1 11.5 16 5.5 1.5:1 22.5 35 -160 15 90 TO-8/SMT0-8/CA

100 - 1200 A1212 14 23 1.6 1.8:1 19 29 -160 5 50 TO-8/SMT0-8/CA

100- 2000 A32 13 20 2.1 1.8:1 21 32 -160 15 94 TO-8/SMT0-8/CA

10 kHz-2500 A3010 10.5 20 4.5 2.0:1 19 32 -160 +12/-5.2 140 TO-8/SMT0-8/CA

20 - 2700 MAAM-007501-SA2002 12.5 22 2.5 1.7:1 27 40 -165 9 165 TO-8/SMT0-8/CA

1000 - 4000 A4012 18 36 3.5 1.7:1 15.5 26 -165 5 65 TO-8/SMT0-8/CA

1000 - 4000 PA48 16 33 5.5 1.6:1 24 34 -160 15 225 TO-8/SMT0-8/CA

2000 - 6000 A6011 15 20 1.5 1.9:1 18 30 -165 5 58 TO-8/SMT0-8/CA

2000-12000 6884-700 27 50 2.7 1.8:1 14.2 25 -160 15 143 TO-8/SMT0-8/CA

Limiting Amplifiers

Frequency Part Gain Noise VSWR P1dB OIP3 Voltage Current(MHz) Number (dB) Figure (dB) In/Out (dBm) (dBm) (Vdc) (mA) Package

50 - 500 LA7 12.5 7.0 1.5:1 12 15.5 15 54 TO-8/SMT0-8/CA

10 - 1000 LA17 11.5 5.8 1.7:1 10 15.0 15 55 TO-8/SMT0-8/CA

1000 - 4000 LA45-1 14.0 7.5 1.8:1 17 18.5 15 110 TO-8/SMT0-8/CA

50 Ohm Hybrid Components

10


Commercial Off-The-Shelf (COTS)

Power Splitters / Combiners

Frequency Part Isolation Phase Balance Amplitude(MHz) Number Channels (dB) (degrees) Balance (dB) Package

1 - 100 MTH-50 2 30 1 0.1 TO-5-1

10 - 500 DS-112 4 25 5 0.2 FP-5

10 - 500 DS-109 2 35 1 0.15 FP-2

10 - 500 DS-319 2 25 1 0.2 TO-8-2

5- 1000 DS/DSS-327 2 20 3 0.2 FP-2/SF-1

25 - 1000 DS-323 3 24 4 0.4 FP-3

10 - 2000 DS/DSS-313 2 23 5 0.3 FP-2/SF-1

Signal Limiters

EvenOrderFrequency Part Insertion VSWR Output Limiting OIP3 (dBm) Harmonic Voltage Current(MHz) Number Loss (dB) In/Out Level* (dB) (dBm) Supression (dBc) (Vdc) (mA) Package

50 - 3000 L1 3 1.7:1 3.5 23 -60 15 7 TO-8/SMT0-8/CA

50 - 4000 L42 4 1.7:1 4.0 23 -60 15 7 TO-8/SMT0-8/CA

* Pin = +20 dBmMax

CouplersFrequency Part Coupling Insertion Maximum Isolation(MHz) Number (dB) Loss(dB) Power (W) (dB) Package

10 - 500 CH/CHS-134 10.8 1.6 1 20 FP-2/SF-1

5- 1000 CH-140 19.75 0.3 3 20 FP-2

1000 - 2000 JH-141 — 0.3 25 18 FP-2

Voltage Control Analog Attenuators

Part Insertion Attenuation Harmonic Switching LinearizerFrequency Number Loss Range Distortion Speed Module Voltage Current

(MHz) (dB) (dB) (dB) (dBc) (µsec) (Vdc) (mA) Package

5 - 2000 G1 2.5 25 -25 < 60, 10% - 90% LG1 0 to 15 4 TO-8/SMT0-8/CA

500 - 4000 G40 2.5 25 -25 < 500, 10% - 90% — 0 to 15 6 TO-8/SMT0-8/CA

MixersFrequency Frequency Part LO Drive Conversion Loss Isolation Compression Input P1dBRF/LO (MHz) IF (MHz) Number (dBm) (dB) LO/RF (dB) (dB) (dBm) Package

0.05 - 200 0 - 200 SM6D 7 7 45 — — SMT

1 - 3400 1 - 2000 SM4T17 17 8 35 13 3 SMT

1 - 3500 1 - 3500 MD-169 10 10 35 7 3 FP-2

5 - 1500 0 - 1000 MD-158 7 9 20 1 — FP

10 - 1500 0 - 800 M2A 7 7.5 40 7 12 TO-8/SMA

300 - 1500 0.1 - 3000 MD-154 10 10 11 7 — FP

2400 - 6000 0 - 2000 M8H-7 7 6 40 0 13 TO-8/SMA

5000 - 18000 0 - 3000 M79 10 7 32 4 14 Minpac/SMA

4500 - 9500 0 - 2000 MY76H 20 7 35 15 24 Versapac/SMA

5000 - 18000 0 - 3000 MZ7420 20 7.5 35 15 21 Versapac/SMA

2000 - 18000 1000 - 8000 MZ8813 13 7 25 8 19 Versapac/SMA

2000 - 18000 30 - 5000 MY83H 20 8.5 25 17 19 Versapac/SMA

2000 - 18000 1000 - 8000 MY89 10 8 28 4 18.5 Versapac/SMA

2000 - 18000 30 - 5000 MZ9313 13 7 24 8 19 Versapac/SMA

2000 - 24000 100 - 5000 M52 10 8 25 5 16 Minpac/SMA

2000 - 26000 1000 - 15000 MY50 10 8 30 5 15 Versapac/SMA

2000 - 26000 100 - 6000 M53 10 8.5 25 5 16 Minpac/SMA

Performance is typical @ +25°C. Sample list of available models from an extensive product line selectionM/A-COM Technology Solutions Inc.


macomtech.com 11

RF and Microwave Broadband Components for MILCOM and Radar (continued)




High Frequency and Ultra Broadband Solutions

mmWave and ElectronicWarfare

M/A-COMTechnology Solutions offers a comprehensive portfolio of millimeter waveMMIC products. Leveraging dual-use technology, we offer both discrete functions aswell as highly integrated soltutions.We also offer a range ofmulti-octave, broadbanddistributed amplifiers, ideal for manymillimeter wave or electronic warfare applications.

M/A-COMTech uses high volume, dual use processes to create compelling productsfor aerospace and defense applications:

• Si bipolar, LDMOS and GaN power transistors• Si, GaAs and AlGaAs diodes• GaAsMESFET and pHEMT basedMMICs• Hybrid components – both passive and active• Hermetic and printed circuit board-basedmodules and assemblies

Our extensive design experience coupled with our semiconductor processing,assembly and automated test capability make us uniquely qualified to addressthemost demanding aerospace and defense specifications.


Frequency Operating P1dB Gain OIP3(GHz) Part Number Description Voltage (V) (dBm) (dB) (dBm) Package

27 - 31 XP1027-BD Power Amplifier 5.5 34.5 21 43 Bare Die

27 - 31 XP1026-BD Power Amplifier 5.5 32 21 40 Bare Die

37 - 40 XP1080-QU Power Amplifier 4 27 25 38 7x7 Laminate

37 - 40 XB1014-QT Driver Amplifier 4 20 21 30.5 3x3QFN

15 - 45 XX1000-QT Doubler 5 18 (Psat) 12 — 3x3QFN

12 - 40 XM1001-BD IR Mixer — — 8 (Loss) 25 (IIP3) Bare Die

27 - 34 XR1019-QH Receiver 3 — 13 -2 (IIP3) 4x4QFN

Broadband Amplfiers

Frequency Gain Noise Figure Output P1dB Output IP3(GHz) Part Number (dB) (dB) (dBm) (dBm) Package

30 kHz - 40 GHz XD1008-BD 15 3.5 22.5 27 Bare Die

18 - 50 XD1001-BD 17 5 19 23 Bare Die

3.5 - 11 XB1007-BD/-QT 23 4.5 19 30 Bare Die/-QT


Detailed specifications for our standard parts can be found quickly on our website at macomtech.com by typing the part number into the search box.All specifications are subject to change.12


High Performance AlGaAs PIN Diode SwitchesExtreme Bandwidth

mmWave and ElectronicWarfare

M/A-COMTechnology Solutions AlGaAs-based diodes provide ultra broadbandperformance from 50MHz to 50 GHzwith functional performance to 70 GHz.Offering an array of standard products as well as custom solutions, AlGaAs diodeswitches are ideally suited for demandingmillimeter wave and broadbandapplications. The high electronmobility of AlGaAs coupled with the low capacitanceof the PIN diodemakes this switch technology ideal for fast switching, high frequency,multi-throw switch designs. Common uses include switching arrays for radarsystems, radiometers, EW receivers, and other multi-assembly components.

M/A-COMTech uses high volume, dual use processes to create compelling productsfor aerospace and defense applications:

• Si bipolar, LDMOS and GaN power transistors• Si, GaAs and AlGaAs diodes• GaAsMESFET and pHEMT basedMMICs• Hybrid components – both passive and active• Hermetic and printed circuit board-basedmodules and assemblies• EAR99

Our extensive design experience coupled with our semiconductor processing,assembly and automated test capability makes us uniquely qualified to addressthemost demanding aerospace and defense specifications.




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Switches

Frequency Insertion Loss Isolation Input IP3(MHz) Part Number Type (dB) (dB) (dBm) Package

50 - 70,000 MA4AGSW1 SPST 0.6 46 40 Die

50 - 70,000 MA4AGSW1A SPST 1.2 30 40 Die

50 - 70,000 MA4AGSW2 SPDT 0.9 33 40 Die

50 - 70,000 MA4AGSW3 SP3T 1.1 31 40 Die

50 - 70,000 MA4AGSW4 SP4T 1.4 32 40 Die

50 - 70,000 MA4AGSW5 SP5T 1.9 30 40 Die

50 - 70,000 MA4AGSW8 SP8T 2.3 32 40 Die

Tactical Missile Defense Radar

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Radar Products

Affordable Aerospace and Defense SolutionsApplying commercial manufacturing processes forhigh performance aerospace and defense applications

Phased array apertures have become the technology of choice for many defense radar,communications and electronic warfare applications. This technology is used insystems as diverse as ship-to-ship communications, UAV data links, high power volumesearch radar, andwideband electronic warfare systems. These systems, whiledisplaying very high performance, also can be very costly...until now.

Cost growth of phased array systems is limiting the deployment of the technologyfor defense applications while making it virtually impossible to realize commercialsystems. M/A-COMTechnology Solutions is actively applying commercial manufacturingpractices to create high performance, affordable phased array building blocks. There isa stark contrast between the worlds of defense and commercial manufacturing. In thecommercial world, themantra is speed tomarket and cost. To be a viable supplier, it ispresumed that youwillmeet specification. Commonly, in the defense world,technologymaturation programs are often implemented after the technology hasfailed to deliver—resulting in years of program delays with concomitant cost growth.

M/A-COMTech’swork on theMPAR (Multifunction Phased Array Radar) program isan excellent example of the application of commercial manufacturing practicesto a technically demanding radar application. In addition to the technical demands,implementation ofMPAR requires an order of magnitude ormore reduction in costas compared to previous defense phased array systems. To achieve these goals,M/A-COMTech has:

• Designed andmanufactured highly integratedMMICs tominimize the totalpart count and simplify manufacturing at the next level of assembly• Packaged all MMICs in industry standard surfacemount plastic packages• Designed andmanufactured printed circuit board (PCB) transmit/receive (T/R)modules to facilitate automated assembly and test• Designed andmanufactured PCB-based line replaceable unit (LRU)which forms the fundamental RF building block for the radar system

MPAR is a dual polarization S-band system. Similar approaches can be takenat other frequencies. We have applied similar methodologies to:

• Highly IntegratedMMICs• Plastic packaging• PCB-based T/Rmodules and higher level assembles• C, X, and Ku bands


Front view of MPAR LRUdisplaying the radiating elements

Back view of MPAR LRUdisplaying the active electronics

PCB-based T/R module

Multifunction transmit ICfor S-band radar containing multiplegain stages, two 6-bit phase shifters

and two 4-bit constant phasedigital attenuators

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High Power GaN TransistorsNext generation high power semiconductor technology

Radar Products

M/A-COMTechnology Solutions recently introducedGalliumNitride (GaN) RF power transistors.Our initial product offering targets S-band pulsed applications and leveragesM/A-COMTech's60-year heritage of providing both standard and custom solutions tomeet themost demandingcustomer needs. Our GaN on Silicon Carbide (SiC) products, offered as transistors and pallets,utilize a 0.5micron HEMT process and exhibit excellent RF performancewith respect to power,gain, gain flatness, efficiency and ruggedness over wide operating bandwidths.

Additional products that target applications such as L-band radar, avionics, EW, andMILCOM,as well as general purpose devices, will be released in 2011.

Why choose GaN?

GaN RF power devices combine the best properties of two technologies: high powerhandling and high-voltage operation of silicon LDMOS devices, with the high-frequencyperformance of GaAs. GaN also offers improved linearity and efficiency performancewhen compared to Si LDMOS. Other advantages include:

• High breakdown voltage • Easy to broadband• Superior power density • High frequency operation• High RF gain and efficiency • Excellent thermal conductivity properties




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GaN Transistors

Frequency Pulse / Duty Pout Gain Efficiency(GHz) Part Number (µs / %) (W) (dB) (%)

.03 - 3.5 MAGX-000035-010000 CW 10 12-30 60

2.7 - 3.1 MAGX-002731-030L00 500 / 10 30 11 55

2.7 - 3.1 MAGX-002731-100L00 500 / 10 100 12 53

2.7 - 3.1 MAGX-002731-180L00 300 / 10 180 11 50

3.1 - 3.5 MAGX-003135-030L00 500 / 10 30 11 55

3.1 - 3.5 MAGX-003135-120L00 300 / 10 120 12 50

3.1 - 3.5 MAGX-003135-180L00 300 / 10 180 11 40

0.96 - 1.2 MAGX-000912-250L00 128 / 10 250 18 60

0.96 - 1.2 MAGX-000912 128 / 10 125 18 60

1.2 - 1.4 MAGX-001214-125L00 300 / 10 125 18 60

1.2 - 1.4 MAGX-001214-250L00 2ms / 10 250 18 60

1.2 - 1.4 MAPG-001214-450L00 2ms / 10 450 17 55

2.7 - 3.1 MAPG-002731-330L00 300 / 10 330 11 40

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30 W

2X 180 W Device

340 W22 dB gain

30 W 1650 W

10 W 120 W 120 W25 dB gain

4X 450 W Pallet

Power Amplifier Line-Ups:

1.2 - 1.4 GHz

2.7 - 3.1 GHz

3.1 - 3.5 GHz


M/A-COMTechnology Solutions offers a comprehensive portfolio of components for phasedarray or active electronically scanned array (AESA) applications such as radar and data links.Our comprehensive product portfolio addressesmajor functions of the block diagram.Realized inM/A-COMTech’s proprietary GaAsMMIC, diode and hybrid technologies—high performance, cost-effective solutions can be achieved.

Component buildingblocks can becustomized to createunique, highlyintegratedT/R circuits.

Radar Products

Components for Phased Array Applications

LNA

ReceiverProtector

DigitalAttenuator

PhaseShifter

DigitalPhaseShifter

Tx

RxLimiter

Pre-driverAmp

DriverAmp

SPDT Switch

ThresholdDetector

BITE I/P

TTL

6 bit

6 bit 6 bit

Attenuator

FinalPowerAmp

to/fromAntenna Array

MASW-007921

MASW-000834

MASL-011022

MAPS-010144

MAPS-010164

MAAM37000

MAAP-010169

MAAP-010170

MAAP-010171

MA4L-Series

MAAD-010174MAAD-000523

MAPS-010143

MAPS-010163

MAPS-011007

MAAL-010704

MAAL-010705

MAAL-010706

MAAM-009560

MAAP-010168

MASW-008322

MASW-002100

MASW-002102

MAPS-010145

MAPS-010146

MAPS-011008

MAAM26100

XP1044

MAAP-011027

MADR-010410

MADR-010574

MASW-011021

MAPS-010146

MAPS-010166

MAAM71200

MAAL-010528

MAAM-010529

MAAM-010530

MAAM71200

XP1035

MAAP-011034

XP1043

Switches

Switch-Limiters

Limiters

Attenuators

Phase Shifters

Low NoiseAmplifiers

DriverAmplifiers

High PowerAmplifiers

CMOSControllers

L-band S-band C-band X-band Ku-band

Production Released

CY2012 Release

CY2011 Release

Future Development

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Radar Products

Components for Phased Array Applications (continued)

T/R Switches

Frequency Isolation Insertion Input IP3(MHz) Part Number Type (dB) Loss (dB) (dBm) Package

0 - 7000 MASW-007921 SPDT 27 0.7 58 2 mm PQFN 8

0.05 - 6000 MASW-000834 SPDT 36 0.4 65 4 mm PQFN 16

0 - 20000 MASW-008322 SPDT 52 1.9 48 4 mm PQFN 16

50 - 26500 MASW-002100 SPDT 65 0.7 40 Die

Limiter Diodes

Incident Peak Power Incident Peak Power Incident Peak Power Recovery Time Maximum Maximumfor 1 dB Limiting for 10 dB limiting for 15 dB Limiting (3 dB) @ Incident CW Input

Frequency Part Number @ 9.4 GHz @ 9.4 GHz @ 9.4 GHz 50W Peak Power Peak Power Power(GHz) (dBm) (dBm) (dBm) (ns) (W) (W)

DC to 20 MA4L011-134 7 30 40 10 80 2

DC to 20 MA4L021-134 8 31 41 15 90 3

DC to 20 MA4L022-134 8 31 41 15 90 3

DC to 20 MA4L031-134 10 33 48 25 125 4

DC to 20 MA4L032-134 11 34 44 25 125 4

DC to 20 MA4L062-134 15 38 50 75 200 5

DC to 20 MA4L101-134 20 45 53 100 250 6

DC to 20 MADL-000301-01340W 23 46 59 50 500 7

DC to 20 MA4L401-134 30 52 60 250 1000 10

Low Noise Amplifiers

Frequency Gain Noise Figure Output P1dB Output IP3(GHz) Part Number (dB) (dB) (dBm) (dBm)

3.5 - 7 MAAM-37000 17 2.2 14 8

7.5 - 12 MAAM71200 15.5 2.7 11 21

7 - 14 XL1018 20 1.7 10 20

Driver Amplifiers

Frequency Gain P1dB Psat(GHz) Part Number (dB) (dBm) (dBm)

0.25 - 4 MAAM-009560 15.5 28.5 —

2 - 6.5 MAAM26100 19 28 30.5

7 - 11 MAAM71100 18 28 31

3.5 - 7 XP1044 18.5 33 34.5

12 - 16 XP1043 21.5 30 32

High Power Amplifiers*

Frequency Gain P1dB Psat(GHz) Part Number (dB) (dBm) (dBm)

5.6 - 7.1 XP1039 17 33 34

7.1 - 8.5 XP1050 15.5 33 34

*All parts are EAR99 except High Power Amplifiers (XP1039 and XP1050)




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Radar Products



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Discrete Transistor: L-band Line-up

High Power Bipolar RF Transistors and Pallets

PH1214-2M MAPRST0002

PH1214-8M PH1214-300M

PH1214-300M

˜1000 Watts150µs, 10%

Part Freq Vcc Pout GainNumber (GHz) (V) (W) (dB)

PH1214-2M 1.2 - 1.4 28 2 7.0PH1214-8M 1.2 - 1.4 28 8 7.0MAPRST0002 1.2 - 1.4 36 50 9.5PH1214-300M 1.2 - 1.4 36 300 8.75

Discrete Transistor: S-band Line-up

PH2731-5M MAPR-002731-115M00

PH2731-20M

˜1300 Watts100µs, 10%

PHA2731-190M

Part Freq Vcc Pout GainNumber (GHz) (V) (W) (dB)

PH2731-5M 2.7 - 3.1 36 5 7.0PH2731-20M 2.7 - 3.1 36 20 8.2MAPR-002731-115M00 2.7 - 3.1 36 115 7.6PHA2731-190M 2.7 - 3.1 36 190 7.0

Pulsed and CW high powerRF transistors for radar applications

worldwide

M/A-COMTechnology Solutions offers a broad range of RF power transistor products—discrete devices and pallets from 1MHz to 3.5 GHz. Our use of goldmetallization resultsin the high reliability required for demanding radar applications. More than 40 years ofexperience and field tested performance in support of pulsed power applicationsmakeM/A-COMTech the ideal partner in solving your critical RF power challenges. Our engineershave in-depth knowledge of the critical requirements of radar systems and support solutionswith both standard and custom products.

M/A-COMTech offers complete transistor line-ups for both L- and S-band radar applications.The final high power stages can be implemented by the customer as discrete transistors orthrough the implementation ofM/A-COMTech integrated pallets.

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1.4-2.4 MAPS-010143 4 3.2 +/- 0.5 +/- 2 0.35 2 40 4 mm PQFN-24

2.3-3.8 MAPS-010144 4 2.5 +/- 0.5 +/- 4 0.35 2.5 47 4 mm PQFN-24

3.5-6.0 MAPS-010145 4 4.5 +/- 0.7 +/- 6 0.4 3 40 4 mm PQFN-24

8.0-12.0 MAPS-010146 4 6.5 +/- 1 +/- 10 0.4 5 40 4 mm PQFN-24

1.4-2.4 MAPS-010163 6 5 +/- 0.8 +/- 4 0.4 3 40 4 mm PQFN-24

2.3-3.8 MAPS-010164 6 3.2 +/- 0.6 +/- 5 0.3 3 45 4 mm PQFN-24

3.5-6.0 MAPS-010165 6 5.5 +/- 0.8 +/- 8 0.4 3 40 4 mm PQFN-24

8.0-12.0 MAPS-010166 6 6.5 +/- 1.2 +/- 8 1.4 5 40 4 mm PQFN-24

1.2-1.4 MAPS-011007 6 3.5 +/- 0.4 +/- 2 0.3 2 40 4 mm PQFN-24

5.0-6.0 MAPS-011008 6 4 +/- 0.4 +/- 3 0.2 2 40 4 mm PQFN-24

Radar Products

M/A-COMTechnology Solutions offers a comprehensive portfolio of digital phase shifters forcommunications, electronic warfare and phased array radar applications. These GaAs pHEMT4-Bit and 6-Bit digital phase shifters cover the 1.2 GHz to 12.0 GHz range. IntegratedwithCMOS Logic, theymeet the high performance requirements of systemmanufacturers byoptimizing for fast switching speed, low phase error, and serial or parallel control capability.M/A-COMTech offers complete transistor line-ups for both L- and S-band radar applications.The final high power stages can be implemented by the customer as discrete transistors orthrough the implementation ofM/A-COMTech integrated pallets.

• S-, L-, C-, and X-band coverage• 4-bit and 6-bit options• Low RMS phase error over 360° range and frequency band• Integrated CMOS logic• Serial or parallel control• Lead free 4mm24-lead PQFN package• EAR99

Digital Phase Shifters

To be released Fall 2011

Frequency Part Insertion Loss IL Variation Phase Accuracy RMS RMS Phase(GHz) Number Bits Any Phase All Bits All Bits Attenuation Error Input IP3 Package

(dB) (dB) (dB) Error (dB) (deg (dBm)

Digital Phase Shifters for Active AntennasGaAs pHEMTTechnologywith Integrated CMOS Logic Controller

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Copyright © 2011, M/A-COM Technology Solutions Inc. All Rights Reserved. This brochure is provided by M/A-COMTechnology Solutions asa service to its customers and may be used for informational purposes only by the customer. M/A-COM Technology Solutions assumes noresponsibility for errors or omissions in thebrochure.M/A-COMTechnologySolutions Inc. and itsaffiliates reserve the right to change any specifi-cation, designs, models and other information contained herein without notice. M/A-COM Technology Solutionsmakes no commitment toupdate the information and shall have no responsibility whatsoever for conflicts, incompatibilities, or other difficulties arising from futurechanges to its documentation, products, specifications and product descriptions.

The First Name in Microwave® is a registered trademark of M/A-COMTechnology Solutions Holdings, Inc.


Lowell, Massachusetts 01851North America 800.366.2266 • Europe +353.21.244.6400India +91.80.43537383 • China (Shanghai) +86.21.5108.6464

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MTS-L-0911027


Documents

A Spectrum of Aerospace and Defense Solutions