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a) Sensors for Biomedical Applicationsb) Electroluminescence of FeSi2 in Si
c) Polymer Light Emitting Diodes
Department of Electronic Engineering
The Chinese University of Hong Kong
Photonics Activities within Solid State Lab
EE – optoelectronics, guided-wave devices, biomedical electronics, signal processing, device fabrication
Photonic
Sensor
R&D
Biochemistry and Medicine – application area identification, supporting facilities, biomolecule selection, bio-material supply, field trials
ACAE – Centre for Micro and Nano Systems, MEMS, micro-fluidics, device modeling
Physics – laser optics, optical diagnostic facilities, novel materials
Academic units & industrial partners in support of photonic sensor R&D in CUHK
E-Care Company Ltd. (wireless healthcare devices)Automatic Mfg. Ltd. (high volume device manufacturing)Photonics Instruments (equipment R&D)Hong Kong Healthcare Services Ltd. (sales and marketing)Hong Kong Health Digit Co. Ltd. (diagnostic equipment)Chan & Hau Medical Laboratories (medical services)
Industrial Partners
Micro-Photonic Sensors for Biomedical Applications
Micro-Photonic Sensors for Biomedical Applications
Biomolecules to be detected
CUHK’s photonics technologies and techniques
Surface Plasmon Resonance, Integrated Optics (Prof. Aaron Ho, EE)
Optical Fibre Phosphorescence (Prof. Dennis Lo, Phys)
DNA, genomic fingerprints
body fluids/blood/urineVirus, cells,
bacteria
Toxins
Carcinogens
Oxygen
Antigen/antibody
Food ingredients
Pollutants
Application Examples: Health care diagnostics
Environmental monitoring
Food and drink industries
Drug R&D
Agriculture
Surface Plasmon Resonance Biosensors
Metal
kspSurfacePlasmon Wave
LowestReflectivity
Differential Phase SPR
Sensor
Biomolecule detection response curve
Reaction curve of BSA (bovine serum albumin) with non-BSA antibody with different concentrations of BSA antibody
-50 0 50 100 150 200 250 300 350 400 450
0
50
100
150
200
3.7ug/ml
37ug/ml
110ug/ml
BSA Antibody into flow cell =>specific binding
PBS
Non-BSA AntibodyInto flow cell
=>No binding
PBS
diff
eren
tial p
hase
(de
gree
s)
time (sec.)
Sensitivity limit of our SPR system
Phase change caused by varying concentration of glycerin/water mixture (Au surface)
020406080
100120140160
0 2 4 6 8 10Concentration of glycerin (%)
Rela
tive p
hase
ch
an
ge (
deg
ree)
glycerin (%)
refractive index
Relative phase
change (°)
0 1.3330 0
0.25 1.3333 21.75
0.5 1.3336 32.59
1 1.3342 57.53
2 1.3353 89.32
4 1.3400 112.59
8 1.3424 135.69
Sensitivity limit of our system: Au surface: 1.38 x 10-7 RIU (Refractive Index Unit) Au/Ag surface: 5.48 x 10-8 RIU
-60
-40
-20
0
20
40
60
0 50 100 150 200 250
Time (min)
Sensitivity Comparison Between Systems
Sensing Principle
BIAcore 3000 (prism-based SPR)
IBIS (vibrating mirror SPR)
Plasmoon (broad-range SPR)
SPREETA (prism-based SPR)
IASys (resonant mirror)
Refractive index range
1.33-1.40 1.33-1.43 1.33-1.48 1.33-1.40 -
Limit of detection (RIU)
*3 × 10-7 2 × 10-6 6 × 10-6 3 × 10-7 >1 × 10-6
Sensitivity limit of our system: Au surface: 1.38 x 10-7 RIU (Refractive Index Unit) Au/Ag surface: 5.48 x 10-8 RIU
0.7 0.8 0.9 1.0 1.1 1.20
5000
10000
15000
20000
PL
Inte
nsity
( w)
Photo energy (eV)
High strain low strain
PL spectra measured at 80K for two samples with different strain states.
Structural and optical properties of FeSi2 nano-crystal embedded in Si synthesized by MEVVA implantation
A simple structure of LED device containing FeSi2 nano-crystal
2μm
FZ n-Si
0.5μm2 nm
+ +-
bias+
FeSi2p+ Si
SiO2ITO
Al
Application of Low Level Birefringence Detection System for Stress Measurement in Semiconductor Materials and Structures
Photoelasticity (PE) method for stress analysis
By measuring the change in the state of polarization of light after passing through the sample, information on the stresses in the sample can be obtained
Low Level Birefringence Detection (LLBD) system
A high sensitive PE technique by using Photoelastic Modulation technique. The sensitivity of current LLBD system is: 0.02º
Application of Low Level Birefringence Detection System for Stress Measurement in Semiconductor Materials and Structures
Distribution of residual stress in the 2- inch bare (100) GaAs wafer
(11 0)
Unit: 107 dyne/cm2
tS iO2= 1.3 m
tSi = 380 mSiO2
Six
y
0
Plot of distribution of stress induced birefringence in silicon substrate under SiO2 film edge
-2000 -1000 0 1000 2000
45
50
55
60
65
70
75
80
85
x (m)
Ret
arda
tion
(D
egre
e)
OLED project team members
Prof. H. F. Chow Dept. of ChemistryProf. S. K. Hark Dept. of PhysicsProf. W. M. Lau Dept. of PhysicsProf. H. C. Ong Dept. of PhysicsDr. K. W. Wong Dept. of PhysicsProf. S. P. Wong Dept. of Electronic EngineeringProf. J. B. Xu Dept. of Electronic Engineering
Project Director: Prof. K. Y. Wong Dept. of Physics
CUHK’s areas of interest in PLED
Comprehensive in-house material characterization facilities (Physics and EE Depts.) to conduct research on:
a) Interface characterization and engineering
b) Degradation mechanisms and improvement
Development of new materials (Chemistry Dept.)
Device fabrication and technology transfer through collaboration with industry (Varitronix) and other local institutions (HKUST, HKBU)
ITF project in collaboration with Varitronix Ltd. (HK $ 4M)
Existing facility for PLED preparation and characterization
XPS, Auger, STM/AFM, SEM, TEM/EELS
PLEDs fabricated
“Green” PLED cell basedon PFO co-polymer from
DOW Chemicals
“Blue” PLED cell basedon PFO from
Prof. H. F. Chow
END