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APLApplied Physics Laboratory, Faculty of Electronic Engineering, University of Nis, A. Medvedeva 14, P.O. Box 73, 18001 Nis, Serbia
A new microcontroller-based RADFET dosimeter reader
A new microcontroller-based RADFET dosimeter readerNikola D. Vasović, Goran S. Ristić
Applied Physics Laboratory, Faculty of Electronic Engineering, University of Nis
APL
A new reader for radiation dose measurements using RADFET (pMOSFET) dosemeters has been developed. The threshold voltage (V ) of the pMOSFETs is measured using a “one-point” method that determines V as the gate voltage for a given drain current. Using V , the absorbed dose, which is directly proportional to the threshold T T T
voltage shift, is calculated. The reader is based on a low cost 8-bit PIC 18F4520 microcontroller (MCU), and works independently of a personal computer, uses a touch screen and stores the data in microcontroller memory. Good agreement in threshold voltage values, obtained using a high-quality source-measure unit and the reader, wasobtained. In addition, the reader can be used for threshold voltage measurement with other types of MOSFETs, especially in long duration experiments, as well as for the real-time measurements in radiotherapy, either as an autonomous system or integrated in a larger monitoring configuration.
ABSTRACT:
Radiation Measurements Vol. 47, pp. 272-276 (2012)
Fig. 1. Set-up for a measurement of VT in one point(a reader circuit configuration).
gatesource
bulk
drain
CurrentSource
+Vs
ID
V = Vmeasured
T G
A
EEPROM256by
GLCD
TouchPanel Micro Controller18F4520
MCP330413bit A/D
SP
I
TSC272
Lm33410μA
RC
S
B
D
G
RADFET
TouchPanelController
Power SupplyDs1820Pt100
+VS
VT
Fig. 2. Block diagram of the PDOS v1.0 reader. Fig. 4. The photograph of realized PDOS v1.0 reader.
+5V
110R
110R
110R
Wd3
Wd2
Wd1
PIC
18
F4
52
0
8 MHz
18 pF
Reset
+5V
10k 100n
TS272
+12V
Pt100
Lm334
+12V
1K3
56K
+5V
MC
P3
30
4
pMOS RADFETS
Lm334
+12V
Ds1
820
Ds1
820
GLCD+
TouchPanel
10k
100k
10k
10k 100k
JMP
+5V
64R
10K
+5V
+5V
+5V
4K
7
4K
7
10K
4K
7
4K
7
10K
4K
7
4K
7
10K
10K
100n
100n 1K
12VDC
330n
+5V
100u
+
LM7805
Fig. 3. Circuit diagram of PDOS v1.0 reader.
A new system, called gasmem v1.0, for the measurements of gas electrical breakdown time delay (t ), with significantly better characteristics than older systems, has been developed and realized. It is based on the PIC 18F4550 microcontroller and could measure the minimal td of about 1.5 μs with the resolution d
of 83.33 ns. The relaxation (afterglow) period (τ) could vary from 1 to 232 ms (≈ 50 days). The successive series of td measurements with various τ could be performed, giving very reliable td data that are stored on the personal computer (PC) hard drive via the USB interface. The td and τ values enable the drawing of memory curves (td = f (τ)) and the analysis of memory effects in the gases. The randomness of t values measured by the gasmem system for more τ values was tested using the nonparametric Wald–Wolfowitz test showing the stochastic nature of obtained results. The memory curves obtained by this d
system have shown very high reproducibility. In addition, the system has a capability of operating as a stand-alone system (independently of a PC), with the possibility for the implementation of a touch screen for controlling the system and additional memory (e.g. memory card) for data storage.
Fig. 1. The block diagram of the gasmem v1.0 system for the tdmeasuring and memory curve recordings.
US
B
Micro Controller18F4550
HIGH VOLTAGEswitching circuit
with optocouplers and mosfet driver
Power Supply
High VoltageSupply
0 V - 1 kV
PC Gas tube LCD
Micro Controller
16F887
Fig. 2. The modules of the realized gasmem v1.0 system
PIC18F4550
Controlmodule
Analogswitch
Switcher trigger
Stop signal
Voltmeter
PIC16F887
LCD 2x16
USB
V
R
Gas tube
A
LM393N
PIC
18
F4
55
0
15 pF
220 nF
8 MHz
15 pF
Vcc
22R
110R
110R
110RReset
Wd1
Wd2
Wd3
HCPL2631
Gejt H
+5V
Gejt L
Stop Voltmetar
Stop trimer
Vcc
+15V
+15V
+15V
Vcc
PstopA
1K 1K
470R
1K
100n
390R
22R
6N137
1K2
2K218p
10k
100n
220V50Hz
1A / Fast
Prekidac
100n
Lm7805Lm7815
0.2m 330n
+15V +5V
Lm7805
0.2m 330n
+5V
100n
1K
FBC
Fig. 3. The modules of the realized gasmem v1.0 system
IRG
4P
H40K
D
Gejt H
Gejt L
IRG
4P
H40K
D
470n
100u
+15V
10R
10R
100n
+5V
IR2213
0 - 1000 V
R3 R4 R12
mA
1M2/3W
Gas tube
10K
1K
Stoptrimer
250mA
LM393N +15V
+15V
PstopA
39
0R
6N137
FBC
1k5 X 1M
47K
+5V
IRG
4P
H40K
D
10 x 10K / 5WTc429
Pobuda tranzistora
+5V+5V
Fig. 4. The ASM of the gasmem v1.0 system.
Fig. 6. Photographs of the released system.
A new, low cost switching system based on PIC 18F4550 microcontroller (MCU), called APL-SM v1.0 system, which enables the successive measuring of both the electrical characteristics in midgap-subthreshold technique (MGT) and charge-pumping currents in charge-pumping technique (CPT) of metal-oxidesemiconductor field effect transistor (MOSFET), has been developed. The APL-SM v1.0 system, instead of expensive switching matrix which price is considerably higher, could be used for the switching from MGT to CPT and vice versa. Using the appropriate program, the system allows the monitoring of MOSFETs during long time periods, helping the performing of long lasting experiments. The good agreement in the electrical characteristics, as well as in the charge-pumping currents, obtained using ultra low current, high speed Keithley switching matrix (SM) and APL-SM system, was obtained.
Fig. 2. Block diagram of the experimental set-up for MGT and CPT of four-pin MOSFETs.
PC
SG
SMU1
1
2
3 SMU2G
D
S
B
MGT
CPT
SG
SMU1
1
2
3 SMU2G
D
S
B
GPIB 488 IEEE
Fig. 1. Block diagram of the experimental set-up for MGT and CPT of three-pin MOSFETs.
PC
SG
GPIB 488 IEEE
SMU1
SMU2G
D
S
MGT
A
CPT
Sw7Sw6Sw5Sw4Sw3Sw2Sw1Sw0
PCUSB
Power Supply
Micro Controller18F4550
Fig. 3. Block diagram of relay controls; Sw0, Sw1, ..., Sw7 are the relays (switchers).
Sw6
Sw4
G
D
S
B
G
B
S
D
SMU2
SG
Pt100
SMU1
Sw0
Sw1
Sw2
Sw3
Sw5
Sw7Sw6
Sw4
G
D
S
B
G
B
S
D
Pt100Sw0
Sw1
Sw2
Sw3
Sw5
Sw7
SMU1
SMU2
SG
GPIB 488 IEEE
PCBipolar
TransistorDriver
MGT
USB Micro Controller18F4550
CPT
Relay Controls: Sw0 - Sw7
Fig. 4. Switching system maps for four-pin MOSFETs in two modes.
Fig. 5. Electrical circuit of realized APL-SM v1.0 system.
Sw6
Sw4
Gate
Body
Source
Drain
SMU2
SG
Pt100
SMU1
Sw0
Sw1Sw2
Sw3
Sw5
Sw7
12 V
1K
1N4007
12 V
1K
1N4007
12 V
1K
1N4007
12 V
1K
1N4007
12 V
1K
1N4007
12 V
1K
1N4007
12 V
1K
1N4007
12 V
1K
1N4007
PIC
18F
4550
220 nF
8 MHz
15 pF
MCLRRA0RA1RA2RA3RA4RA5RE0RE1RE2VDDGNDOSC1OSC2RC0RC1RC2RC3RD0RD1
Rb7RB6RB5RB4RB3RB2RB1RB0VDDGNDRD7RD6RD5RD4RC7RC6RC5RC4RD3RD2
5V
220V / 50Hz2200uF 220 nF
LM7812
LM7805
12 V
5V
Sw6
Sw4
G
D
S
B
G
B
S
D
SMU2
SG
Pt100
SMU1
Sw0
Sw1
Sw2
Sw3
Sw5
Sw7Sw6
Sw4
G
D
S
B
G
B
S
D
Pt100Sw0
Sw1
Sw2
Sw3
Sw5
Sw7
SMU1
SMU2
SG
GPIB 488 IEEE
PCBipolar
TransistorDriver
MGT
USB Micro Controller18F4550
CPT
Relay Controls: Sw0 - Sw7
Fig. 6. Application of APL-SM v1.0 system on three-pin MOSFETs.
Fig. 7. Photographs of the released system.
ABSTRACT:
A system for gas electrical breakdown time delay measurements based on a microcontrollerMiomir Todorović, Nikola D. Vasović and Goran S. Ristić
Applied Physics Laboratory, Faculty of Electronic Engineering, University of Nis
Measurement Science and Technology Vol. 23, 9pp. 015901 (2012)
PIC
18
F8
87
15 pF
8 MHz
15 pF
Vcc
110R
110R
Reset
Vcc
+15V +5V
10k 100n
P1: Voltage U0P2: Current I0
Wd1Wd2
TS
272IN
4K7
4K7
4K7
4K7
AinHI1
AinHI2
39R
Fig. 5. The VM of the gasmem v1.0 system.
ABSTRACT:
A switching system based on microcontroller for successive applying of MGT and CPT on MOSFETsNikola D. Vasović, Goran S. Ristić
Applied Physics Laboratory, Faculty of Electronic Engineering, University of Nis
Measurement, (2012) DOI: 10.1016/j.measurement.2012.03.011