60V N-Channel MOSFETs PDL6912 · Potens semiconductor corp. Ver.1.04

Potens semiconductor corp. Ver.1.05

1

PDL6912 60V N-Channel MOSFETs

Symbol Parameter Rating Units

VDS Drain-Source Voltage 60 V

VGS Gate-Source Voltage ±20 V

ID Drain Current – Continuous (TA=25℃) 5 A

Drain Current – Continuous (TA=70℃) 4 A

IDM Drain Current – Pulsed1 20 A

EAS Single Pulse Avalanche Energy2 8 mJ

IAS Single Pulse Avalanche Current2 12.8 A

PD Power Dissipation (TA=25℃) 1.79 W

Power Dissipation – Derate above 25℃ 0.014 W/℃

TSTG Storage Temperature Range -55 to 150 ℃

TJ Operating Junction Temperature Range -55 to 150 ℃

BVDSS RDSON ID

60V 75m 5A

Symbol Parameter Typ. Max. Unit

RθJA Thermal Resistance Junction to ambient --- 70 ℃/W

These N-Channel enhancement mode power field effect

transistors are using trench DMOS technology. This

advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are

well suited for high efficiency fast switching applications.

60V,5A, RDS(ON) =75mΩ@VGS = 10V

Improved dv/dt capability

Fast switching

100% EAS Guaranteed

Green Device Available

General Description

Features

Applications

Motor Drive

Power Tools

LED Lighting

Absolute Maximum Ratings Tc=25℃ unless otherwise noted

Thermal Characteristics

SOT223 Pin Configuration

D

G

S

D

D G

S


2


Off Characteristics

Symbol Parameter Conditions Min. Typ. Max. Unit

BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 60 --- --- V

△BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.05 --- V/℃

IDSS Drain-Source Leakage Current VDS=60V , VGS=0V , TJ=25℃ --- --- 1 uA

VDS=48V , VGS=0V , TJ=125℃ --- --- 10 uA

IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA

On Characteristics

RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=5A --- 60 75 m

VGS=4.5V , ID=3A --- 70 90 m

VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA

1.2 1.8 2.5 V

△VGS(th) VGS(th) Temperature Coefficient --- -5 --- mV/℃

gfs Forward Transconductance VDS=10V , ID=3A --- 7 --- S

Dynamic and switching Characteristics

Qg Total Gate Charge2 , 3

VDS=30V , VGS=10V , ID=3A

--- 4.6 8

nC Qgs Gate-Source Charge2 , 3 --- 0.4 3

Qgd Gate-Drain Charge2 , 3 --- 2 4

Td(on) Turn-On Delay Time2 , 3

VDD=30V , VGS=10V , RG=6

ID=3A

--- 2.9 6

ns Tr Rise Time2 , 3 --- 9.5 18

Td(off) Turn-Off Delay Time2 , 3 --- 18.4 35

Tf Fall Time2 , 3 --- 5.3 10

Ciss Input Capacitance

VDS=30V , VGS=0V , F=1MHz

--- 360 540

pF Coss Output Capacitance --- 30 45

Crss Reverse Transfer Capacitance --- 20 30

Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 2 4

Symbol Parameter Conditions Min. Typ. Max. Unit

IS Continuous Source Current VG=VD=0V , Force Current

--- --- 5 A

ISM Pulsed Source Current --- --- 20 A

VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V

trr Reverse Recovery Time2 VR=50V, IS=3A

di/dt=100A/µs, TJ=25℃

--- 25 --- ns

Qrr Reverse Recovery Charge2 --- 15 --- nC

Note :

1. Repetitive Rating : Pulsed width limited by maximum junction temperature.

2. VDD=25V,VGS=10V,L=0.1mH,IAS=12.8A.,RG=25,Starting TJ=25℃

3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.

4. Essentially independent of operating temperature.

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Drain-Source Diode Characteristics and Maximum Ratings


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0

1

2

3

4

5

25 50 75 100 125 150

0.4

0.6

0.8

1

1.2

1.4

-50 0 50 100 150

0

0.5

1

1.5

2

2.5

-50 0 50 100 150

0

1

2

3

4

5

0 0.6 1.2 1.8 2.4 3

VGS=2.5V

VGS=2.7V

VGS=3VVGS=3.3V

55

58

61

64

67

70

0 2 4 6 8 10

Tc=25℃

ID=1A

ID=5A

57

60

63

66

69

72

1 2 3 4 5

Tc=25℃

VGS=6V

VGS=10V

VGS=4.5V

I D ,

Co

nti

nu

ou

s D

rain

Cu

rren

t (A

)

Fig.1 Typical Output Characteristics

I D

, C

on

tin

uou

s D

rain

Cu

rren

t (A

)

TC , Case Temperature (℃)

Fig.2 Continuous Drain Current vs. TC

No

rmal

ized

On

Res

ista

nce

TJ , Junction Temperature (℃)

Fig.3 Normalized RDSON vs. TJ

No

rmal

ized

Gat

e T

hre

sho

ld V

olt

age

TJ , Junction Temperature (℃)

Fig.4 Normalized Vth vs. TJ

RD

S(O

N) , T

urn

-On

Res

ista

nce

(m

oh

m)

Fig.5 Turn-On Resistance vs. VGS

Fig.6 Turn-On Resistance vs. ID

RD

S(O

N) , T

urn

-On

Res

ista

nce

(m

oh

m)

VDS ,Drain to Source Voltage (V)

VGS , Gate to Source Voltage (V)

ID , Drain Current (A)


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Fig.10 Maximum Safe Operation Area

Fig.11 Switching Time Waveform

Fig.12 EAS Waveform

Fig.8 Gate Charge Characteristics

Td(on) Tr

Ton

Td(off) Tf

Toff

VDS

VGS

90%

10%

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1

NOTES:DUTY FACTOR: D = t1/t2SINGLE PULSE

0.50.20.10.050.020.01

IAS

VGS

BVDSS

VDD

EAS=1

2L x IAS

2 x

BVDSS

BVDSS-VDD

0

2

4

6

8

10

0 1 2 3 4 5

ID=3AVDS=30V

0.01

0.1

1

10

100

0.1 1 10 100

TC=25℃DC100ms10ms

100us

10us

1ms

1

10

100

1000

0.1 1 10

Ciss

Coss

Crss

VDS , Drain to Source Voltage (V)

Qg , Gate Charge (nC)

No

rmal

ized

Th

erm

al R

esp

on

se

VG

S ,

Gat

e to

So

urc

e V

olt

age

(V)

(m

ohm

)

Fig.9 Normalized Transient Impedance

Square Wave Pulse Duration (s)

VDS , Drain to Source Voltage (V)

I D ,

Co

nti

nu

ou

s D

rain

Cu

rren

t (A

)

Cap

acit

ance

(p

F)

Fig.7 Capacitance Characteristics


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Symbol Dimensions In Millimeters Dimensions In Inches

MAX MIN MAX MIN

A 1.800 1.500 0.071 0.060

A1 0.120 0.000 0.005 0.000

A2 1.750 1.450 0.069 0.057

b 0.820 0.600 0.032 0.024

c 0.350 0.200 0.014 0.008

D 6.700 6.200 0.264 0.244

D1 3.100 2.900 0.122 0.114

E 3.700 3.300 0.146 0.130

E1 7.300 6.700 0.287 0.264

e 2.30(BSC) 0.091(BSC)

e1 4.700 4.400 0.185 0.173

L 1.150 0.900 0.045 0.035

θ 10° 0° 10° 0°

SOT223 PACKAGE INFORMATION

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60V N-Channel MOSFETs PDL6912 · Potens semiconductor corp. Ver.1.04