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3D Silicon Detectors for LHC Upgrades3D Silicon Detectors for LHC Upgrades20
09pgpgCinzia Da Viá,
The University of ManchesterFor the 3DATLAS project
S-21
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y 2
•Introduction
3D ili i l d
For the 3DATLAS project
ster
-SLA
C –A
DS •3D silicon pixel detectors:
-Radiation Hardness t d dissi ti
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ty o
f M
anch
e -current and power dissipation-C, noise, timewalk and overdrive with AtlasFE-I3-module design plans for the IBL for Atlas
aVi
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•Status of fabrication facilities
•Conclusions -Timescale and plans for 2009
Cinz
iaD Conclusions -Timescale and plans for 2009
C. Kenney, S. Parker (MBC, Hawaii), J. Hasi, S. Watts, J. Pater, J. Freestone, S. Kolya, S.Snow; R. Thompson (Manchester), M. Mathes M. Cristinziani, N. Wermes (Bonn), S. Stapnes, O. Rohne, E. Bolle (Oslo),G. Darbo, R. Beccherle (Genova), S. Pospisil, V. Linhart, T. Slaviceck (Praha), K. Einsweiler, M. Garcia-Sciveres (LBL) A. Kok, T-E Hansen (Sintef)– More generally the ATLAS-3D project team
Introduction20
09S-
21st
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ary
2st
er-S
LAC
–AD
Ser
sity
of
Man
che
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Cinz
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Track reconstruction at different luminositiesTrack reconstruction at different luminositiesd j f k kd j f k k
2009
need to reject fake tracksneed to reject fake tracksS-
21st
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2st
er-S
LAC
–AD
Ser
sity
of
Man
che
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CMS simulation-From Collins, VPI 2007
From J. Nash/IC SLHC R&D, Cern 9 April 200820
09S-
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2st
er-S
LAC
–AD
Ser
sity
of
Man
che
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The LHC and SLHC challenge20
09
at full luminosity L=1034 cm-2 s-1:• ~23 overlapping interactions in each bunch crossing every 25
g
1016
SUPER - LHC (5 years, 2500 fb-1)Pixel (?) Ministrip (?)
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y 2
ns ( = 40 MHz )
• inside tracker acceptance (|h|<2.5) 750 charged tracks per bunch crossing
5 1014 bb 1014 tt 20 000 hi b t l 10161015
51016
cm-2
] total fluence Φeqtotal fluence Φeq
Macropixel (?)
ster
-SLA
C –A
DS • per year: ~5x1014 bb; ~1014 tt; ~20,000 higgs; but also ~1016
inelastic collisions – impact parameter resolution important
• severe radiation damage to detectors:
– Fast Hadron dose at 4 cm after 10 years/500 fb-1 is 3 51014
5
Φeq
[c
neutrons Φeq
pions Φeq
th h d
ersi
ty o
f M
anch
e Fast Hadron dose at 4 cm after 10 years/500 fb is 3 x 1015 cm-2
– Fast Hadron Dose at 22 cm after 10 years/ 500 fb-1 is 1.5 x 1014 cm-2
0 10 20 30 40 50 60r [cm]
1013
other charged hadrons ΦeqATLAS SCT - barrelATLAS Pixel
(microstrip detectors)
[M.Moll, simplified, scaled from ATLAS TDR]
aVi
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–SLHC L=1035cm-2s-1
Fast Hadron dose at 4cm after 5 Years is 1 6x1016cm-2
Displacement Damage in Silcon for Different Particles
1.0E+04
Cinz
iaD Fast Hadron dose at 4cm after 5 Years is 1.6x10 cm
2500 fb-1 after 5 years
~230 overlapping interactions Primary vertex detection! 1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
D/(9
5MeV
mb)
protons
electrons
pions
~7000 ch-tracks/bc- (rejection)1.0E-05
1.0E-04
1.0E-03
1.0E-10 1.0E-08 1.0E-06 1.0E-04 1.0E-02 1.0E+00 1.0E+02 1.0E+04
particle energy [MeV]D neutrons
General considerations for the next generationGeneral considerations for the next generationf i l d t t t h lf i l d t t t h l
2009
of pixel detector technologyof pixel detector technologyS-
21st
Janu
ary
2
Radiation hardness : for the IBL 3x1015 n/cm3
( up to~2x 1016 n/cm2 for the upgrade) -Preserve tracking performance
ster
-SLA
C –A
DS Preserve tracking performance
Power budget and max current limited – cables (now Vmax=600V )Cooling - HV power distribution
ersi
ty o
f M
anch
e Cooling HV power distribution
Layout improvement - Active edge sensors,IBL radius - material budget
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IBL radius material budgetLorentz angle - MCM compatible –
Large scale production – industrial vendors availability
Cinz
iaD
g p yTimescale - Yield - Cost
Speed better than present planar technologyp p p yPileups, rate
Radiation Induced Bulk Damage in SiliconRadiation Induced Bulk Damage in Siliconin a ‘nut shell’in a ‘nut shell’
2009
From RD48/ROSERD50
in a nut shellin a nut shellS-
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Janu
ary
2
Primary Knock on Atom
Displacement threshold in Si:Frenkel pair E~25eV
ster
-SLA
C –A
DS p
Defect cluster E~5keV
Vacancy
ersi
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e
V,I MIGRATE UNTIL THEY MEETVan Lint 1980
Interstitial
Effect on sensors
aVi
a’-Th
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E
V,I MIGRATE UNTIL THEY MEETIMPURITIES AND DOPANTS TOFORM STABLE DEFECTS
CHARGED DEFECTS==>NEFF, VBIAS
DEEP TRAPS, RECOMBINATION
Cinz
iaD Ec
Ei V2(-/0)+Vn Ec-0.40eVV2(=/-)+Vn Ec-0.22eVVO- Ec - 0.17eVV6
V2O
CENTERS ==>CHARGE LOSS
GENERATION CENTERS==>LEAKAGE CURRENT
Ev
Ei
CIOI(0/+) EV+0.36eV
V2O
At higher fluencesTrapping dominates
φλ 1
∝∝L
SEBy solving Ramo’s equation20
09
200
ns)
T = -20 oC
500
Leff e 3V/micronLeff h 3V/micron)
φLλ=effective drift length = τeff x vdrift
S-21
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100
150
ft L
engt
h (m
icro Electrons
200
300
400
250K and 3V/micronScaled by 1.43 compared
to Kramberger data
ft Le
ngth
(mic
rons
)
ster
-SLA
C –A
DS
0
50
Fluence = 1015 protons cm-2
Eff
ectiv
e D
rif
Holes
0
100
200
Effe
ctiv
e D
rif
ersi
ty o
f M
anch
e 00 1 2 3 4
Electric Field ( Volt/micron )
Fox maximum Fox maximum
0 2 1015 4 1015 6 1015 8 1015 1 1016
24 GeV/c proton fluence
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•Collect electrons 3 times higher bilit th h l
Signal Efficiency in Si:Signal Efficiency in Si:
3D
Technologies:
Cinz
iaD mobility than holes
•Work at vdrift saturated (~3V/mm)
n-on-n, n-on-p, MCz thin epi
•Small inter-electrode spacing LMCz,, thin, epiThen:Diamond, Gossip
Some history..3D silicon sensors were originally proposed by Sherwood ParkerSome history..3D silicon sensors were originally proposed by Sherwood Parkerand fabricated at Stanford by C. Kenney (MBC) who proposed “active edges”. and fabricated at Stanford by C. Kenney (MBC) who proposed “active edges”. And since 2000 by J. And since 2000 by J. HasiHasi (Manchester) (Manchester)
2009
yy ( )( )
l
S-21
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y 2 Combine traditional VLSI processing and
MEMS (Micro Electro Mechanical Systems)technology.
h l h
ster
-SLA
C –A
DS Both electrode types are processed inside the
detector bulk instead of being implanted on the Wafer's surface.
h l f ll b
ersi
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anch
e The edge is an electrode (following an idea by C. Kenney). Dead volume at the Edge < 5 microns! Essential for forward physics experiments and material budget
aVi
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2006 3DC collaboration was formed
1. NIMA 395 (1997) 328 2. IEEE Trans Nucl Sci 46 (1999) 12243. IEEE Trans Nucl Sci 48 (2001) 1894 IEEE Trans Nucl Sci 48 (2001) 1629
Cinz
iaD Core Members: Brunel/Manchester, Hawaii
Oslo University, Sintef and Stanford (MBC)4. IEEE Trans Nucl Sci 48 (2001) 1629 5. IEEE Trans Nucl Sci 48 (2001) 2405 6. Proc. SPIE 4784 (2002)3657. CERN Courier, Vol 43, Jan 2003, pp 23-268. NIM A 509 (2003) 86-919. NIMA 524 (2004) 236-244
2007 3D Atlas R&D approved 10. NIM A 549 (2005) 12211. NIM A 560 (2006) 12712. NIM A 565 (2006) 27213. IEEE TNS 53 (2006) 167614. NIM A 587(2008) 243-249
ProcessingProcessing20
09
ProcessingProcessingS-
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2
Currently performed at the Stanford-Nanofabrication-
ster
-SLA
C –A
DS
Facility (CIS) Stanford USA
C. Kenney (MBC), J. Hasi (Manchester)
ersi
ty o
f M
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e (Manchester)
1000m2
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Manchester HAWAII
1000 1000m2
Cinz
iaD Manchester – HAWAII –
STANFORD (Molecular Biology Consortium)
SINTEF, Oslo, Praha form the 3DCConsortium, since February 2006
Aspect ratio:D:d = 11:1
Key processing steps (25Key processing steps (25--32)32)20
09
1- etching the 2-filling themelectrode with dopants
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Step 1-3 field implant oxidize
Step 9-13 dope and fill n+
Dd
ster
-SLA
C –A
DS
WAFER BONDING (mechanical stability)Si-OH + HO-Si -> Si-O-Si + H2O
implant, oxidize and fusion bond wafer
and fill n+electrodes LOW PRESSURE
CHEMICAL VAPOR DEPOSITION(Electrodes filling with conformal doped polysilicon
ersi
ty o
f M
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e
Step 4-6 pattern and etch p+ window contacts
Step 14-17 etch n+
window contacts and electrodes
conformal doped polysilicon SiH4 at ~620C)2P2O5 +5 Si-> 4P + 5 SiO22B2O3 +3Si -> 4 B +3 SiO2
Both electrodes appear on both surfaces
aVi
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290
μm
contacts
Step 18-23 dope and fill p+
p
Cinz
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DEEP REACTIVEION ETCHING (STS) (electrodes definition)
Step 7-8 etch p+
electrodes
and fill p+electrodes
nMETAL DEPOSITION(electrodes definition)
Bosh processSiF4 (gas) +C4F8 (teflon)
Step 24-25 deposit and pattern Aluminum
Shorting electrodes of the same type with Al for strip electronics readoutor deposit metal for bump-bonding
Next step: Dual readoutNext step: Dual readout20
09
From Kenney US Atlas Upgrade meetingSeptember 08
S-21
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Dual Readout – 3D Bump Side
ster
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C –A
DS
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e
C. Da Via et al., “Dual readout – strip/pixel systems”,NIM A594, pp. 7-12 (2008).
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Dual Readout – 3D Non-Bump SideDevices being presently processedPrototypes available in
Cinz
iaD Prototypes available in
spring-summer09. Might be used for trigger at AtlasFPtrigger at AtlasFP
Active edge processingActive edge processing20
09
Active edge processingActive edge processingS-
21st
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ary
2
A TRENCH IS ETCHED AND DOPED TO TERMINATE THE E-FIELD LINES
ster
-SLA
C –A
DS FIELD LINES
ersi
ty o
f M
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e
AFTER THE FULL PROCESS IS COMPLETED THE MATERIAL SURROUNDING
aVi
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AWAY AND THE SUPPORTWAFER REMOVED : NO SAWING NEEDED!!!
Cinz
iaD (NO CHIPS, NO CRACKS)
MBCMBC--MANCHESTERMANCHESTER--HAWAIIHAWAIIDesign and fabrication by:
Financial support:STFC-UK for the FP420 projectDOE, USA for ATLAS Upgrade
2009 2E
50 μm
Thickness <210 μm>p-type substrate 12kΩcm
Design and fabrication by:J. Hasi, ManchesterC. Kenney, MBC at CIS-Stanford
S-21
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y 2
400 μm50 μm
n
ster
-SLA
C –A
DS
3E
p 103μmVfd ~20V
Baby-2E Baby-3EATLAS pixel chip7.2 x 8 mm2
2880 pixels
ersi
ty o
f M
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e
400 μm50 μm
n Atlas chip picture from
aVi
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4E
p71 μm
Vfd ~8V
picture from Bekerle Vertex03
Cinz
iaD 4E
400 μm50 μm
56 μmp
n
Vfd ~5V10 wafers being competed. Yield~80% (1 wafer)
Radiation hardness testsRadiation hardness tests20
09
S l /fl A d 1M V P
Irradiation and measurements performed in PragueC. Da Viá, T. Slaviceck, V. Linhart, P. Bem, S. Parker, S. Pospisil, S. Watts (process J. Hasi, C. Kenney)
S-21
stJa
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y 2 Samples/fluence As measured
n/cm2
1MeV (1.784)n/cm2
Protons(1/0.51)p/cm2
2E, 3E, 4E 4.23 1014 7.55 1014 1.48 1015
2E 3E 4E 1 12 1015 2 00 1015 3 92 1015 amplifiers
ster
-SLA
C –A
DS 2E, 3E, 4E 1.12 1015 2.00 1015 3.92 1015
2E, 3E, 4E 4.94 1015 8.81 1015 1.73 1016
amplifiers
ersi
ty o
f M
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e
0 .0 01
0 .0 02
IR Laser1060nm
Oscilloscope Probeslaser
aVi
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-0 .0 04
-0 .0 03
-0 .0 02
-0 .0 01
0
Sign
al [V
]
bias
Cinz
iaD
-0 .0 06
-0 .0 05
-3 1 0 -7 -2 1 0 -7 -1 1 0 -7 0 1 1 0 -7 2 1 0 -7 3 1 0 -7
T im e [s ]
T=-20C Gain = ~10000T=-20C
sample
Radiation hardnessRadiation hardness 8.81x1015n/cm2
1.73x1016p/cm220
09 80
100
120
ncy
[%]
2E120
1602E NI7.55e142.00e158.81e15
tude
[mV]
2E 45%
Irradiation and measurements performed in PragueC. Da Viá, T. Slaviceck, V. Linhart, P. Bem, S. Parker, S. Pospisil, S. Watts (process J. Hasi, C. Kenney)
2E50 μm
S-21
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y 2
0
20
40
60
Sign
al e
ffici
en
C. Da Viá July 070
40
80
Sign
al A
mpl
it
C. Da Viá July 07
2E9000e-
Vb~130V
45%
threshold
400 μmμ
n
ster
-SLA
C –A
DS 0
0 2 1015 4 1015 6 1015 8 1015 1 1016
Fluence [n/cm2]
100
120
%]
120
140
1603E-NI7.55e142.00e158.81e15[m
V]
00 50 100 150 200
Bias Voltage [V]
3E 51%3E
50
p 103μmVfd ~20V
ersi
ty o
f M
anch
e
20
40
60
80
Sign
al e
ffici
ency
[%
3E
40
60
80
100
120 8.81e15
Sign
al A
mpl
itude
[3E10200e-
Vb~112V
51%400 μm
50 μm
pn
aVi
a’-Th
e U
nive
120
0
20
0 2 1015 4 1015 6 1015 8 1015 1 1016
S
Fluence [n/cm2]
C. Da Viá July 07
140
0
20
0 50 100 150 200Bias Voltage [V]
C. Da Viá July 07 threshold
4E
p71 μm
Vfd ~8V
Cinz
iaD
60
80
100
120
effic
ienc
y [%
]
4E
60
80
100
120
1404E NI7.55e142.00e15 8.81e15
Am
plitu
de [m
V]4E13200e-
Vb~94V
E
400 μm50 μm
0
20
40
0 2 1015 4 1015 6 1015 8 1015 1 1016
Sign
al e
Fluence [n/cm2]
C. Da Viá et al. July 070
20
40
0 50 100 150 200
Sign
al A
Bias Voltage [V]
C.DaVia July 07
Vb 94V66%
thresholdp
n
Vfd ~5V
Signal Efficiency and Signal Charge in 3DSignal Efficiency and Signal Charge in 3D20
09g y g gg y g g
structuresstructuresS-
21st
Janu
ary
2
particle3Dn+p+ n+n+n+ p+ p+p+ n+
⎤⎡λ
)exp(λx
dtdx
dxdVq
dtdS W −=
ster
-SLA
C –A
DS
--
--
++++
++
++
L Δ
⎥⎦⎤
⎢⎣⎡ −−= )exp(1
λλ xL
S
)(22 λλλ LSE ⎟
⎞⎜⎛
⎟⎞
⎜⎛
ersi
ty o
f M
anch
e
d
~50 μm
--
--
++ )exp(λ
λλλ LLLL
SE −⎟⎠⎞
⎜⎝⎛+⎟
⎠⎞
⎜⎝⎛−=
aVi
a’-Th
e U
nive ~ 500 μmActive edge ~4μm
Φ+= KL
SEτ6.01
1
Cinz
iaD
----
++
++++
L=Δi
Dv
L=Inter electrode distanceΔ thi k
PLANARn+
Trapping times from Kramberger et al. NIMA 481 (2002) 100 NIM A 501(2003) 138 (Vertex 2001)
Δ=thickness
Signal efficiency and signal chargeSignal efficiency and signal charge20
09
[9] C. Da Via et al.”, (NIMA-D-08-00587)[10] G. Kramberger at al., Nucl. Instr. Meths. A 554 (2005) 212-219[11] G. Kramberger, Workshop on Defect Analysis in Silicon Detectors, Hamburg, August2006. http://wwwiexp.desy.de/seminare/defect.analysis.workshop.august.2006.html[12] G. Casse et al., Nucl. Instr. Meths. A (2004) 362-365[14] T. Rohe et al. Nucl. Instr. Meths. A 552 (2005) 232-238
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100 56μm 3D - 4E [9]71μm 3D - 3E [9]103μm 3D 2E [9]
25000.0103μm 3D - 2E [9]71 3D 3E [9]
[ ] ( )[16] F. Lemeilleur et al., Nucl. Instr. Meths. A 360 (1995) 438-444
ster
-SLA
C –A
DS
60
80
103μm 3D - 2E [9]75μm epi [11]150μm epi [11]285μm n+n pixels [14]285μm n+p strips[12]300μm p+n strips [16]
ency
[%]
15000.0
20000.0
71μm 3D - 3E [9]56μm 3D - 4E [9]50μm epi [10]75μm epi [11]150μm epi [11]285μm n+p strips[12]285μm n+n pixels [14]
ge [e
- ]
71μm 3D
ersi
ty o
f M
anch
e
20
40
Sign
al E
ffici
e
5000 0
10000.0
Sign
al C
harg
75 m
aVi
a’-Th
e U
nive
0
20
0 2 1015 4 1015 6 1015 8 1015 1 1016
Fluence [1MeV Equivalent n/cm2]
C.DaVia; S. Watts Aug08
0.0
5000.0
0 2 1015 4 1015 6 1015 8 1015 1 1016
Fluence [1 MeV equivelent n/cm-2]
C. Da Via S. Watts April 08
75μmepi
Cinz
iaD Fluence [1 MeV equivelent n/cm ]
S l 80 (λ/L) Δ 80λ 80 30 2400
Example at 1016 ncm2
SMIP planar ~ 80 (λ/L) x Δ ~ 80λ ~ 80x30 ~ 2400e-
SMIP 3D ~ 80λ x (Δ/L) ~ 2400 x 210/(71-22electrode implant) ~ 10290e-
The geometrical dependence of the signal The geometrical dependence of the signal efficiency on the interefficiency on the inter--electrode spacing Lelectrode spacing L
2009 100
efficiency on the interefficiency on the inter electrode spacing Lelectrode spacing L
1
S-21
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80
1E153.5E158.8E15
y [%
] LSE 1
∝
ster
-SLA
C –A
DS
40
60
l Effi
cien
cy
L=Δ~300μm
ersi
ty o
f M
anch
e
20Sign
al
L=Δ~50μm epi
aVi
a’-Th
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00 50 100 150 200 250 300
Inter-electrode spacing [μm]
C. Da Via' April 08
L=~50μm 3D
Cinz
iaD
[3D- 56-71-103 μm] C. Da Via et al.”, (NIMA-D-08-00587)[epi 25 - 50μm ] G. Kramberger at al., Nucl. Instr. Meths. A 554 (2005) 212-219[epi 75 μm] G. Kramberger, Workshop on Defect Analysis in Silicon Detectors, Hamburg, August2006 http://wwwiexp desy de/seminare/defect analysis workshop august 2006 html2006. http://wwwiexp.desy.de/seminare/defect.analysis.workshop.august.2006.html[planar 285μm] G. Casse et al., Nucl. Instr. Meths. A (2004) 362-365[planar 285μm] T. Rohe et al. Nucl. Instr. Meths. A 552 (2005) 232-238[F planar 300μm]. Lemeilleur et al., Nucl. Instr. Meths. A 360 (1995) 438-444
Test beam at the CERN SPSTest beam at the CERN SPS20
09
Bonn telescope
S-21
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y 2
ster
-SLA
C –A
DS
ersi
ty o
f M
anch
ea
Via’-
The
Uni
veCi
nzia
D
Noise characterisation using the Noise characterisation using the ATLAS FEATLAS FE--I3 chip I3 chip –– bumpbump--bonding IZM through Bonn Universitybonding IZM through Bonn University
2009
Tests by E. Bolle, O. Rohne (Oslo)
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ster
-SLA
C –A
DS
ersi
ty o
f M
anch
e
Leakage currents 2
aVi
a’-Th
e U
nive
L a ag curr nts before irradiation~325 pA/pixel1.5
2E C (fF)3E C (fF)4E C (fF)
r mic
ron
(fF)
Cinz
iaD
Noise vsBias voltage0.5
1
Cap
acita
nce
pe simulation
10 20 30 40 50 60
Voltage (V)
Noise vscapacitance
Reproducibility -1 Leakage currents after bump-bonding20
09
•1uA correspond to 350pA/pixel
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ster
-SLA
C –A
DS
ersi
ty o
f M
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e
3E-F
aVi
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Noisy pixelsPossibly bump-bonding
Cinz
iaD
2E A
Possibly bump bonding
2E-A4E-B
Tracking efficiency June 06Tracking efficiency June 06bumpbump bonding at IZM (Bonn)bonding at IZM (Bonn)
2009
bumpbump--bonding at IZM (Bonn)bonding at IZM (Bonn)
M. Mathes1, C. DaVia2, J. Hasi2, S. Parker3, M. Ruspa4,L. Reuen1, J. Velthuis1, S. Watts2, M. Cristinziani1, K.Ei s il 4 M G i S i s4 K K 5 N W m s1 Data analyisis and silulation by M Mathes M Cristinziani (Bonn)
S-21
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y 2 Einsweiler4, M. Gracia-Sciveres4,K. Kenney5, N. Wermes1
1Bonn, Germany2Manchester University, UK3University of Hawaii, USA4LBL, Berkeley, USA5Molecular Biology Consortium, Stanford, USA
3E 3200 e-
threshold
Data analyisis and silulation by M. Mathes, M. Cristinziani (Bonn)S. Watts (Manchster)
data
ster
-SLA
C –A
DS
0obeam
data
ersi
ty o
f M
anch
e simulation
ε = (95.9 ± 0.1) %
aVi
a’-Th
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nive
bdata
ε (95.9 ± 0.1) %
Cinz
iaD 15obeam
simulation
ε = (99.9 ± 0.1) %
Tracking performance 3E configuration 20
09g p g
Correlation with telescope planes
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ster
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C –A
DS
ersi
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e
50μm direction:
aVi
a’-Th
e U
nive 50μm direction:
width (49.4±0.1)μm, sigma (4.8±0.1)μm
400μm direction:
Cinz
iaD 400μm direction
width (398.0±0.3)μm, sigma (6.4±0.2)μmM. Mathes1, C. DaVia2, J. Hasi2, S. Parker3, M. Ruspa4,L. Reuen1, J. Velthuis1, S. Watts2, M. Cristinziani1, K.Einsweiler4, M. Gracia-Sciveres4,K. Kenney5, N. Wermes11Bonn, Germany2Manchester University, UK3University of Hawaii, USA4LBL, Berkeley, USA5Molecular Biology Consortium, Stanford, USA
4E electrode angular response 4E electrode angular response –– preliminarypreliminary20
09
b
1 pixel cross section 50 x 250 Vbias= 20V Th. = 4000e-
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ea
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The
Uni
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Charge sharing 20
09
Charge sharing Measurements A. La Rosa/CERN 241Am .
S-21
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150
200
250
rons
)
Hole 1Hole 2 planar
ster
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DS
50
100
150
Y (M
icr
Electron 1 Electron 2
ersi
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e
0290 300 310 320 330 340 350 360
X (Microns)
de
aVi
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0
10
20
cron
s)
Electron 2
0.9
1
cent
ral e
lect
rod
3D
Cinz
iaD
-20
-10
0
Y (M
ic
Hole 1
Electron 1
Hole 2
Electron 2
0.6
0.7
0.8
Planar Y=50Planar Y=150Planar Y=2503D Y=-12.53D Y=-5
Frac
tion
to c
-30-50 -40 -30 -20 -10 0
X (Microns)
0.5-25 -20 -15 -10 -5 0
Distance from central electrode (Microns)
Preliminary results: Preliminary results: t t b J 2008t t b J 2008
Bump-bonding and telescope20
09 3E-40V 3E-10V
test beam June 2008test beam June 2008S-
21st
Janu
ary
2 3E 10V
ster
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Ed
Efficiency~92%
aVi
a’-Th
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nive Edge response
Cinz
iaD
10 90% 25Data presented at IEEE-NSS08 by O. Rohne, Olso Electrode efficiency~27%
10-90% ~25μmAnalysis ongoing
Radiation damage 3DRadiation damage 3D--FEFE--I3I320
09
I di ti diti
S-21
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y 2 Irradiation conditions:
Stanford 3E-device bonded to Atlas FE-I3 front end
ster
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DS
Irradiated at PS with 24GeV protons under 40V biasTotal fluence 9.8x1014pcm2
Partially annealed during testing
ersi
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e
y g g
Post irradiation:
aVi
a’-Th
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Bond wires destroyed by corrosionSeveral repair attempt including replacement on new boardBias voltage limited to ~3V by hot spot (caused by thermal choc)
Cinz
iaD Bias voltage limited to ~3V by hot spot (caused by thermal choc)
Cooling during test beam limited to 0oC
Test beam dataTest beam dataIrradiated sampleIrradiated sample
Comparison to same typeIrradiated with neutrons
2009
140
1603E-NI7 55e14]
Irradiated sampleIrradiated sample Irradiated with neutronsTested with IR light
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80
100
120
140 7.55e142.00e158.81e15
mpl
itude
[mV]
ster
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C –A
DS
Hot spot 20
40
60
Sign
al A
m
C Da Viá July 0720%
ersi
ty o
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e Hot spot 00 50 100 150 200
Bias Voltage [V]
C. Da Viá July 07
3V bias voltage!
20%
aVi
a’-Th
e U
nive 3V bias voltage!
T=0oC
TOT overall
Cinz
iaD
50%TOT overall
TOT
1x1015pcm-2
Power dissipationPower dissipation Processing: J. Hasi Manchesteri, C. Kenney, MBCMeasurements: M.Hoeferkamp UNMT. Slavicek PragueAnalysis and simulation C.DaVia, S.Watts, Manchester20
09 200
4E n1
S-21
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140
160
1804E n2E n3E n3E p
g Vo
ltage
[V]
0.1
4E at -10C neutrons3E at -10C neutrons2E at-10C neutronssimulation alpha 53E at -10C protonssimulation alpha 22 ]
ster
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DS
80
100
120
y = 88.075 + 7.4264e-15x R= 0.84247
y = 82.219 + 4.5391e-15x R= 0.99043
Ope
ratin
g
C DaVia and S J Watts July 08
0.01
s u at o a p a
wer
cm
-2 [
W/c
m2
ersi
ty o
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e
1.0 10-4
protons
600 5x1015 1x1016 1.5x1016 2x1016 2.5x1016
Equivalent neutron fluence [n/cm2]
C. DaVia and S. J. Watts July 08
0.001
Pow
aVi
a’-Th
e U
nive
6.0 10-5
8.0 10-5
pIfd 20C
Ifd 0C
Ifd -10C
Cur
rent
[A]
0.0001
1014 1015 1016 1017
Fluence [ncm-2]
C. DaVia et al. Oct. 08
Cinz
iaD
2.0 10-5
4.0 10-5
Leak
age
C Fluence [ncm ]
Power/cm2 at -10oC
At 1.0x1015 ncm-2 ~ 3 mWcm-2
0.00 5 1015 1 1016 1.5 1016 2 1016 2.5 1016
fluence ncm-2
C. DaVia, M. Hoeferkamp July 08At 5.0x1015 ncm-2 ~ 33 mWcm-2
At 1.0x1016ncm-2 ~ 120 mWcm-2
At 2.1x1016 ncm-2 ~ 443mWcm-2
Timewalk and overdrive with FETimewalk and overdrive with FE--I3+3DI3+3D20
09
3500
4000
3D-4E
3D Overdrive measurements: Bolle, Heinsweiler, Rohne
F t ti lk ( ll
S-21
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2000
2500
3000
3500IL68 IP68 standard
IL96 IP128 20%
IL64 IP192 40%
driv
e [e
-]
3D 2E
3D-3E
3D 4E
3D 3E
3D-4E
Faster timewalk (smalleroverdrive) by increasing FE current
ster
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C –A
DS
500
1000
1500
2000
Ove
rd
diamond
planar Si
3D-2E
3D-2E
3D-3E
3D-2E
3D-3E
3D-4E • Threshold triggered system• Difference between t and t gives the time walk• New bunch crossing every 25ns• Need to cross threshold within 20ns to be accepted
ersi
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0
500
0 50 100 150 200 250 300 350
Noise [e-]
C. Da Via Oct.08
3500
p• How much overdrive is needed to cross threshold within
20ns?
Timewalk dependence on sensor Capacitance
aVi
a’-Th
e U
nive
2500
3000
3500Overdrive-IL68IP68
OverdriveIL128IP128
OverdriveIL64IP296
y = 1189.4 + 16.478x R= 0.98309
y = 833.01 + 9.8693x R= 0.95153
tron
s)
2E 0.188 fF/micron 39.5 fF 210 micron3E 0.392 fF/micron 82.3 fF 210 micron4E 0.660 fF/micron 138.6 fF 210 micron
N t 1 Pl 8 4 fF 250 i
Cinz
iaD
1000
1500
2000 y = 616.98 + 7.6539x R= 0.91972
Ove
rdriv
e (e
lect Note1: Planar 8.4 fF 250 micron
Note2: Using thicknesses of actual detectors as we have noise data for these
0
500
-100 -50 0 50 100 150
Sensor Capacitance (fF)
FlexPDE simulation
S. Watts, Manchester
TimewalkTimewalk–– Overdrive Overdrive -- Required Signal and Required Signal and implications on the Power Budgetimplications on the Power Budget
2009 20000
4E-201um
0 8 1015 1.6 1016 2.4 1016Fluence [p/cm2]
Required Signal = (bare threshold d i ) 2
S-21
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Sensor BareThreshold[e ]
OverdriveIP68 IL68[e-]
In timeThreshold[e ]
Required signal[e-]
15000
4E 201um3E-210um2E-210um
rge
[e-]
+overdrive) x 2
ster
-SLA
C –A
DS [e-] [e ] [e-] [e ]
Si planar 2500 1250 3750 7500
3D-2E 2500 1800 4300 8600
3D-3E 3200 2800 6000 120005000
10000
Sign
al c
har
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ty o
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e
3D-4E 3200 3340 6540 13080
Diamond 1500 800 2300 46000 5 1015 1 1016 1.5 1016
Fluence [n/cm2]
C. Da Via'/ Oct08
3.5 1015Compilation Si planar+diamond - Sadrozinski
aVi
a’-Th
e U
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FE-I3 power/module = 3.6W = 3.6W/13cm2 = 280mWcm-2
At -10 oC1
3D worse caseplanar 900V
Cinz
iaD
P3D3.5 ~30 + 280 = 310mWcm-2
P3D10 ~100+ 280 = 380mWcm-2
P l (500V 40 A 4 ( 25C 10C) 280 360 W 2
0.01
0.1p
W/c
m2 a
t -25
C
Ppl.3.5 ~(500Vx40μAx4 (-25C->-10C) +280 = 360mWcm-2
Ppl.10 ~(500Vx170x4)+280=620mWcm-2Planar data from Affolder, Orsay October08 0.0001
0.001
1014 1015 1016 1017
Fluence [ncm-2]
Overdrive and power dissipationOverdrive and power dissipationIL68 IP68 STANDARD PLANAR SETTINGS A l t 91 A VDDA 1 6V d VDD 2 0V
2009
8 1015 1 6 1016 2 4 1016Fluence [p/cm2]
P 30 280 56 366 W 2 t 10C
IL68 IP68 – STANDARD PLANAR SETTINGS: Analogue current=91mA., VDDA = 1.6V and VDD = 2.0VIL96 IP128- Analogue current=126mA (+38%) VDDA = 1.6V VDD= 2.0VIL64 IP192 Analogue current =158mA (+76%) VDDA = 1.6V VDD= 2.0V
S-21
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Sensor Bare Threshold[e ]
OverdriveIP128 IL96[ ]
In timeThreshold[ ]
Required signal[e ]
15000
200004E-201um3E-210um2E-210um
e [e
-]
0 8 1015 1.6 1016 2.4 1016 P3.5 =30 + 280 + 56 = 366mWcm-2 at-10CP10 =100+ 280 + 56 = 436mWcm-2 at -10C
+20%
ster
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C –A
DS [e-] [e-] [e-] [e-]
Si planar 2500
3D-2E 2500 1120 3620 7240
3D-3E 3200 1830 5030 100605000
10000
Sign
al c
harg
e
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e
3D-4E 3200 2130 5330 10660
diamond 15000
0 5 1015 1 1016 1.5 1016
Fluence [n/cm2]
C. Da Via'/ Oct08
3.5 1015
aVi
a’-Th
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nive
Sensor Bare Threshold
OverdriveIP192 IL64
In timeThreshold
Required signal15000
200004E-201um3E-210um2E-210um
0 8 1015 1.6 1016 2.4 1016Fluence [p/cm2] P3.5 =30 + 280 + 112 = 422mWcm-2 at -10C
P10 =100+ 280 + 112 = 492mWcm-2 at -10C
+40%
Cinz
iaD [e-] [e-] [e-] [e-]
Si planar 2500
3D-2E 2500 820 3320 6640
3D 3E 3200 1440 4640 92805000
10000
Sign
al c
harg
e [e
-]
3D-3E 3200 1440 4640 9280
3D-4E 3200 1600 4800 9600
diamond 15000
5000
0 5 1015 1 1016 1.5 1016
Fluence [n/cm2]
C. Da Via'/ Oct08
3.5 1015
Capacitance simulationCapacitance simulation20
09Capacitance simulationCapacitance simulation
S. Watts/Manchester
S-21
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Flex-pde
Thi k d fl
Required Signal = (bare threshold +overdrive) x 2
ster
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C –A
DS
100
110
0 6
0.7
IE Distance (μm)
2 1016
ncm
-2]
Thickness and fluence
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80
90
100
0.4
0.5
0.6
C/ μm(fF)
trode
Dis
tanc
e Capacitance/ 1 1016
1.5 1016
time
Thre
shol
d [n
aVi
a’-Th
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60
70
80
0.2
0.3
0.4
Inte
r-E
lect
/micron (fF) 5 1015
1 10
2E - Phi N2E - Phi - 20%2E - Phi - 40%4E - Phi - Nen
ce fo
r tw
ice
In t
Cinz
iaD
50 0.12 3 4
Electrodes/cell
0180 200 220 240 260 280 300 320
4E - Phi -20%4E - Phi - 40%Fl
ue
Thickness [microns]
3D sensors currently developed in 3DAtlas3D sensors currently developed in 3DAtlas20
09
3DC Fabricated at Stanford and tested with Atlas pixel
Full 3DActive edge
S-21
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y 2
IRST Run n-on-p completed FE-I3 bump-bonded.
pReadout – and SLHC fluencesDesign at its 5thGeneration
3DC SINTEF
ster
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DS Run n on p completed FE I3 bump bonded.
Active edgeBeing included in layout
CNM n-on-p completed andFE-I3 waiting
3DC SINTEF FE-I3 n-on-n Bum-bonded. n-on-p withFE-I4 run started. Should be ready by spring 09
ersi
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e for bump-bonding
Double column design
aVi
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ICEMos- Being presently fabricatedWork performed in the RD50 frameworkno data available yet
Cinz
iaD
Full 3DNo active edge
The Atlas 3D projectThe Atlas 3D project20
09p jp j
Development, Testing and Industrialization of Full-3D Active-Edge d M difi d 3D Sili R di i Pi l S i h
S-21
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y 2 and Modified-3D Silicon Radiation Pixel Sensors with
Extreme Radiation Hardness Results, Plans.Proponents: C. Da Viá, S. Parker, G. Darbo
Status: APPROVED
ster
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2. Participating Institutions 10 Institutions, 4 Fabrication Facilities
ATLAS groups participating are from Bergen University, Bonn University, Freiburg University, University of Genova, Glasgow University, the
ersi
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e University of Hawaii, Lawrence Berkeley National Laboratory, Manchester University, the University of New Mexico, Oslo University and the Czech Technical University. At present C. Kenney (Molecular Biology Consortium) and Jasmine Hasi (Manchester University), working at the Stanford Nanofabrication Facility, made all of the Full-3D sensors. For this project industrial companies will join the above mentioned institutions to study the feasibility of a large volume production in time for the upgrade.
aVi
a’-Th
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nive
for the upgrade. They are: CNM/Valencia Spain, ,ICEMos, Ireland, IRST Italy and SINTEF Norway.
Topic(s) and goal(s) of the R&D proposal
The primary goal is the development fabrication characterization and testing with and without the front end readout
Cinz
iaD The primary goal is the development, fabrication, characterization, and testing, with and without the front-end readout
chip, of Full-3D – active-edge and Mod-3D silicon pixel sensors of extreme radiation hardness and high speed for the the Super-LHC ATLAS upgrade and, possibly, the ATLAS B-layer replacement. A secondary goal is to start design work for a reduced material B-layer detector module using these sensors.FP420 is used as a test bench for the technology
New groups since September 08: CERN and SLAC
Processing facility statusProcessing facility status20
09g yg y
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Site Technology Bump-Bonded Beam Test Comment
Stanford Full-3D Yes. 2006 2006/2007 Smallest hole diameter is around 17microns with 250 micron thick wafer.Best aspect ratio around 15:1.
ersi
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e SINTEF Full-3D Yes. 2008 Radioactive sources Has new and excellent DRIE machines(Alcatel) with expected aspect rationof 20:1 or better. Long track record ofworking with HEP producing planardetectors. Does not have all polysiliconfilling equipment (n and p doping) in-house Investigating suitable suppliers
aVi
a’-Th
e U
nive house. Investigating suitable suppliers.
Holes filled at Stanford at present.
CNM Double sided 3D (no active edge) Wafer ready Radioactive sources Use Alcatel etcher and reachedaspect ratio of 25:1. Holes are notfully filled. Plans to move to full3D
Cinz
iaD 3D.
IRST Double sided 3D (no active edge) Yes, 2008 2006 using microstrip readout
Use Alcatel etcher. Holes are not fullyfilled but plans to solve the problem.Plans to move to a full 3D design withactive edges in near future.
SINTEF/3DCSINTEF/3DCMounting Bonn - Bump-bonding IZM/BonnMeasurements O. Rohne, H Gjesdal
FE-I320
09S-
21st
Janu
ary
2st
er-S
LAC
–AD
Ser
sity
of
Man
che
Full3D with active edges10 assemblies bump-bondedn-on-n structuresHigh leakage after bump bondingdue to a missing oxide layer
241Am
Alcatel
aVi
a’-Th
e U
nive due to a missing oxide layer
Particles visible
FE-I4Process
etcher
Cinz
iaD ProcessJust started
Sintef layout mask containing FE-I4 chips20
09
Atlas FE I4 chips
Ready by summer 09
S-21
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y 2
1E, 2E, 3E, 4E, 5E test structuresAtlas FE- I4 chips 2E configuration
ster
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DS
Medipix chips CMS type structures, 14.6 % of wafer area
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ATLAS 1E, 2E, 3E, 4E, 5E chips
FBKFBK--IRST TrentoIRST Trento--ItalyItaly20
09 • 3D-DDTC concept
S-21
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y 2
(Double-side Double Type Column)
• Expected to have performance comparable
to standard 3D detectors (if d is small enough)
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C –A
DS
Batch DDTC 1 DDTC 2
• 2 batches under fabrication
ATLAS pixel, single-chip
ersi
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e Batch DDTC 1 DDTC 2
Substrate type n-type p-type
Subst. thickness (μm) 300 205 – 255
Column depth (μm) 200 180 – 200
(2, 3, 4 or 7 columns/pixel)
aVi
a’-Th
e U
nive
Column depth (μm) 200(not optimized)
180 200(optimized)
Strip design and pitch (μm)
AC/DC coupled, 80 – 100
AC/DC coupled, 80 – 100
Cinz
iaD
Pixel design ALICE, MEDIPIX ATLAS, CMS
Due by August September 2007Due by August 2007
September 2007
FBK/IRST FBK/IRST ––GenovaGenova--CERNCERN FE-I3
Measurements. A. La Rosa (Cern)And G. Darbo (Genova)
2009
FBK/IRST FBK/IRST GenovaGenova CERNCERN FE I3S-
21st
Janu
ary
2st
er-S
LAC
–AD
S
needle70V
80V1μA
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e 1μA
aVi
a’-Th
e U
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Cinz
iaD
Preliminary TOT needs calibration
FBK/IRST FBK/IRST ––GenovaGenova--CERNCERN20
09FBK/IRST FBK/IRST GenovaGenova CERNCERN
Measurements. A. La Rosa (Cern)And G. Darbo (Genova)
S-21
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-SLA
C –A
DS
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The
Uni
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CNM/ Glasgow : single column 3D sensors fabricated and future CNM/ Glasgow : single column 3D sensors fabricated and future production of partialproduction of partial--and fulland full--double column designdouble column design
Celeste Fleta Richard Bates, Chris Parkes, David Pennicard – University of Glasgow20
09
Manuel Lozano, Giulio Pellegrini – CNM (Barcelona)
S-21
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y 2
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C –A
DS
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The
Uni
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ICEMos Tech
CNMCNM--FreiburgFreiburg--GlasgowGlasgow20
09gg gg
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C –A
DS
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ea
Via’-
The
Uni
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Processing Facilities plans for 200920
09
IRST-FBK CNM-GlasgowATLAS PixelsS-
21st
Janu
ary
2st
er-S
LAC
–AD
Ser
sity
of
Man
che
aVi
a’-Th
e U
nive
Cinz
iaD Bump-bonded 08 batch being tested
09/09 200 μm n-on-p with180μm column04/09 full3D double sided
2008 batch completedSuccessfully and beingBump-bonded
04/09 full3D double sidedProcessTo start in fall09 full3D withActive edges
Test samples irradiated
Evolution of IB layer design20
09 Current
IBLEvolution of IB-layer designS-
21st
Janu
ary
2 Current
ster
-SLA
C –A
DS
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Via’-
The
Uni
ve
B-layer envelope
Cinz
iaD
y p45.5mm
From Neal Hartman, Nikef ATUW, 3 Nov. 08
3D active edges 3D active edges E x B = 0 at 0 angle in solenoidfield - Lorentz angle
In 3D20
09f Lor ntz ang
S-21
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NOW Big chips
Active edges
Effective Si thickness
680μ 605μ 515μC b
ster
-SLA
C –A
DS
~1.5 mm
thickness Can be pushed to 450u
ersi
ty o
f M
anch
e .5 mm
Present planar 2.2%Xo
aVi
a’-Th
e U
nive
11oWith active edgeCould aim at 1.6%X0
Cinz
iaD
~4μmModule looks the same, but there is no dead margin on the sensor perimeter, allowing less overlap Still 2 pixel radial overlap in phi This could be a good Single modules=>allowing less overlap. Still 2 pixel radial overlap in phi. This could be a good baseline starting point. From M. Garcia-Scieveres talkPresented at the ID ATLAS Upgrade Workshop. Liverpool 6-8 December 06
Single modules >High yield
See O. Rohne presentation20
09
http://indico.cern.ch/getFile.py/access?contribId=66&sessionId=2&resId=3&materialId=slides&confId=32084
Plan for testing in spring-summer 09
S-21
stJa
nuar
y 2 Etched sensors fabricated at Stanford
(Hasi, Kenney)-FEchips LBL, mounting Genova,Testing Oslo.
ster
-SLA
C –A
DS
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anch
ea
Via’-
The
Uni
veCi
nzia
D
M D d FE
Alignment system in Genova
SCM using 3D and FE-I3 3D stave
ATLASFP – 2011-2012Forward Detectors = use LHC beam-line as a spectrometerP t n n l ss sults in p t n t j ct h i nt l d p tu
2009
Proton energy loss results in proton trajectory horizontal departureS-
21st
Janu
ary
2
IP1
ster
-SLA
C –A
DS
y(m
m)
220m
���� y(m
m)
420m
ersi
ty o
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anch
e
x(mm)x(mm)
���
V. Avati/Totem
V. Avati/Totem
aVi
a’-Th
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Cinz
iaD
Tracking Detectors: at 420m 25x5mmTracking Detectors: at 420m 25x5mm2220
09
3D silicon with active edges
50 400
S-21
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y 2 50μmx400μm
ster
-SLA
C –A
DS
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ea
Via’-
The
Uni
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D
x,y50 m 14.4 m
12μσ μ= =
LHC EXPERIMENT
DIMENSIONS
RO SIGNAL
TRIGGER BUFFER
ATLAS 50x400 μm2
7.2x8mm2binary andti
Internal fast-OR
2 - 6.4μs40 MHz
R.ThompsonS.Kolya/Manchester
12time over threshold
FullFull--3D sensor speed3D sensor speed3D Tests with 0.13 3D Tests with 0.13 μμm CMOS Amplifier chipm CMOS Amplifier chip(A Kok, S. Parker, C. Da Viá, P. Jarron, M. Depeisse, G. Anelli), fabricated at StanfordBy J Hasi C Kenney
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By J. Hasi, C. KenneyS-
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High average e-field at low Vbias
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Conclusions and Plans for 2009Conclusions and Plans for 200920
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CNM-FBK-SINTEF successfully completed FE-I3 sensorsCERN and SLAC joined 3DAtlas pixel project
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Progress in understanding of 3D behaviour with FE-I3 crucial for FE-I4 well advancedD t i di t d d i b t t i i
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and power budget within specs– Turbodaq Systems being installed in labs to speed up systematic testing
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2009 plan:bump-bonding of existing sensors completed- preparation for test
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organisation of systematic testing and database
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ready for testing at Stanford
irradiation of sensors with protons and neutrons – testirradiation of sensors with protons and neutrons test
Test beams at CERN – May and Octoberdata analysis and report of systematic testing
Always keep an eye for new detector ideas....20
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borrowed from P. Le Compte at the LiverpoolAtlas Tracker Upgrade Workshop Dec 2006
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Production considerations Production considerations 20
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•B-layer is ~1500-1800 cm2. This is around 4000 FE-I3 ATLAS Pixel sensors. If FE-I4 chips areused (336 x 80 or ~20 x17mm2 for a total area of 3.4cm2), the sensors will be five times as big, but
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gthen the yield may reduce.
•The yield factor needs to be established. A combination of IRST, Sintef CNM and Stanford couldpossibly produce the required number of sensors (for b-layer ~1500 cm2 or ~1800 cm2 including
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spares for a total of ~520 FE-I4 sensors).
•IRST, Sintef and CNM would need to use 2009 to establish the process.
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•~12 FE-I4 sensors would fit in a 4inch wafer so one would need 43 4 inch wafers divided by the
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nive yield to produce the 520 needed. The yield is not known. If one assumes 50% then 86 wafers or 4
batches. A reasonable timescale is ~2 years.
• SINTEF could produce more batches per year, but would at present need the holes filled at
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per year for these steps). 100 wafers per year is considered aggressive but not impossible. Two orthree batches of 25 per year is reasonable. Currently they are processing 4 inch wafers for 3Dwork but could process 6 inch. This is a process change and would require further R&D.
•IRST and CNM could also contribute with 4 inch as soon as active edges are established (early09?)
3D signal modelling and data fit 3D signal modelling and data fit using a 0.25using a 0.25μμmmFE chip (Jarron Anelli Cern MIC)FE chip (Jarron Anelli Cern MIC)
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A. Kok PhD ThesisFE chip (Jarron, Anelli, Cern MIC)FE chip (Jarron, Anelli, Cern MIC)S-
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Simulation of signals rise and fall time distributions over a cell (full dot)distributions over a cell (full dot) and 90Sr data (open dot)
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3D – Time Response Using 0.25 µm CMOS amplifier(P. Jarron, G. Anelli, A. Kok, C. Da Via, in A. Kok thesis)
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After irradiation