3-Phase Inverter Automotive Power Module - RS …docs-europe.electrocomponents.com/webdocs/13a1/0900766b813a1e3… · Auto SPM ©2013 Fairchild Semiconductor Corporation 1 FTCO3V455A1

©20FT

FTCO

3V455A1 3-Phase Inverter A

utomotive Pow

er Module

April 2013

®

Auto SPMFTCO3V455A13-Phase Inverter Automotive Power ModuleGeneral DescriptionThe FTCO3V455A1 is a 40V low Rds(on) automotive qualified

Features• 40V-150A 3-phase trench MOSFET inverter bridge

• 1% precision shunt current sensing

• Temperature sensing

• DBC substrate

• 100% lead free and RoHS compliant 2000/53/C directive.

power module featuring a 3-phase MOSFET inverter optimized for 12V battery systems. It includes a precision shunt resistor for current sensing an NTC for temperature sensing and an RC snubber circuit.The module utilizes Fairchild's trench MOSFET technology and it is designed to provide a very compact and high performance variable speed motor drive for applications like electric powersteering, electro-hydraulic power steering, electric water pumps, electric oil pumps. The power module is 100% lead free, RoHSand UL compliant.

Benefits• Low junction-sink thermal resistance

• Compact motor design

• Low inverter electrical resistance

• High current handling

• Highly integrated compact design

• Better EMC and electrical isolation

• Easy and reliable installation • Improved overall system reliability

• UL94V-0 compliant

• Isolation rating of 2500Vrms/min

• Mounting through screws

• Automotive qualified

Applications• Electric and Electro-Hydraulic Power Steering

• Electric Water Pump

• Electric Oil Pump

• Electric Fan

Absolute Maximum Ratings (TJ = 25°C, Unless Otherwise Specified)

Symbol Parameter Rating UnitVDS(Q1~Q6) Drain to Source Voltage 40 V

VGS(Q1~Q6) Gate to Source Voltage ±20 V

ID(Q1~Q6) Drain Current Continuous(TC GS = 10V) 150 A

EAS(Q1~Q6) Single Pulse Avalanche Energy (*Note 1) 947 mJ

PD Power dissipation 115 W

TJ Maximum Junction Temperature 175 °C

TSTG Storage Temperature 125 °C

Figure 1.schematic

Figure 2. package

= 25°C, V

13 Fairchild Semiconductor Corporation 1 www.fairchildsemi.comCO3V455A1 Rev. C2

©2FT

FTCO


utomotive Pow

er Module

Pin Configuration

Pin DescriptionFigure 3.

Pin Number Pin Name Pin Descriptions1 TEMP 1 NTC Thermistor Terminal 12 TEMP 2 NTC Thermistor Terminal 23 PHASE W SENSE Source of HS W and Drain of LS W4 GATE HS W Gate of HS phase W MOSFET5 GATE LS W Gate of LS phase W MOSFET6 PHASE V SENSE Source of HS V and Drain of LS V7 GATE HS V Gate of HS phase V MOSFET8 GATE LS V Gate of LS phase V MOSFET9 PHASE U SENSE Source of HS U and Drain of LS U

10 GATE HS U Gate of HS phase U MOSFET11 VBAT SENSE Drain of HS U, V and W MOSFET12 GATE LS U Gate of LS phase U MOSFET13 SHUNT P Source of LS U, V W MOSFETS / Shunt +14 SHUNT N Negative shunt terminal (shunt -)15 VBAT Positive battery terminal16 GND Negative battery terminal17 PHASE U Motor phase U18 PHASE V Motor phase V19 PHASE W Motor phase W


©2013 Fairchild Semiconductor Corporation 3 www.fairchildsemi.comFTCO3V455A1 Rev. C2

FTCO


utomotive Pow

er Module

Internal Equivalent Circuit

Figure 4.

TEMP 1

TEMP 2

SHUNT N

SHUNT P

GATE HS W

GATE HS V

GATE HS U

VBAT SENSEVBAT

PHASE U

PHASE V

PHASE W

GND

GATE L S U

GATE L S V

GATE LS W

CSR

PHASE1 SENSE

PHASE2 SENSE

PHASE3 SENSE


FTCO


utomotive Pow

er Module

Flammability InformationAll materials present in the power module meet UL flammability rating class 94V-0 or higher.

SolderSolder used is a lead free SnAgCu alloy.

Compliance to RoHS The Power Module is 100% lead free and RoHS compiant with the 2000/53/C directive.


FTCO


utomotive Pow

er Module

Absolute Maximum Ratings (TJ = 25°C, Unless Otherwise Specified)

Symbol Parameter Rating UnitVDS(Q1~Q6) Drain to Source Voltage 40 V

VGS(Q1~Q6) Gate to Source Voltage ±20 V

ID(Q1~Q6) Drain Current Continuous(TC = 25°C, VGS = 10V) 150 A

EAS(Q1~Q6) Single Pulse Avalanche Energy (*Note 1) 947 mJ

PD Power dissipation 115 W

TJ Maximum Junction Temperature 175 °C

TSTG Storage Temperature 125 °C

Thermal Resistance

Symbol Parameter Min. Typ. Max. UnitRthjs Thermal Resis-tance Junction to case, Single Inverter FET, PKG center

(*Note 2)

Q1 Thermal Resistance J -C - 1.3 1.7 °C/W






TJ Maximum Junction Temperature - 175 °C

TS Operating Sink Temperature -40 120 °C

TSTG Storage Temperature -40 125 °C

Notes:.* Note 1 - Starting Tj=25°C,Vds=20V,Ias=64A,L= 480uH. * Note 2 -These values are based on Thermal simulations and PV level measurements. These values assume a single MOSFET is on, and the test condition for referenced temperature is “Package Center”. This means that the DT is measured between the Tj of each MOSFET and the bottom surface temperature immediately under

the thermal media in the center of the package.

©20FT

FTCO


utomotive Pow

er Module

Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified)

Symbol Parameter Test Conditions Min Typ Max Units

BVDSSD-S Breakdown Voltage

(Inverter MOSFETs) VGS=0, ID=250uA 40 - - V

VGSGate to Source Voltage

(Inverter MOSFETs) - -20 - 20 V

VTHThreshold Voltage

(Inverter MOSFETs) VGS=VDS, ID=250uA, Tj=25°C 2.0 2.8 4.0 V

VSD MOSFET Body Diode Forward Voltage VGS=0V, IS=80A, Tj=25°C 0.8 1.28 V

RDS(ON)Q1Inverter High Side MOSFETs Q1

(See *Note3)VGS=10V, ID=80A, Tj=25°C - mΩ





RDS(ON)Q4Inverter Low Side MOSFETs Q4






IDSSInverter MOSFETs

(UH,UL,VH,VL,WH,WL)VGS=0V, VDS=32V, Tj=25°C - - 1.0 uA

IGSSInverter MOSFETs

Gate to Source Leakage CurrentVGS=±20V - - ±100 nA

Total loop resistance VLINK(+) - V0 (-) VGS=10V,ID=80A,Tj=25°C - mΩ

Temperature Sense (NTC Thermistor)

Symbol Test Conditions Test Time Min Typ Max UnitsVoltage Current=1mA, Temperature=25°C T=0.5ms 7.5 - 12 V

Current Sense Resistor

Symbol Test Conditions Test Time Min Typ Max Units

Resistance Current Senset resistor current = 80A T=0.5ms 0.46 - 0.53 mΩ

1.15 1.66

1.22 1.73

1.31 1.82

1.36 1.87

1.57 2.08

1.86 2.32

4.69 5.5

* Note 3 - All Mosfets have same die size and Rdson. The different Rdson values listed in the datasheet are due to the different access points available inside the module for Rdson measurement. While the high side MOSFETs (Q1, Q2, Q3) have source sense wire bonds, the low side mosfets (Q4, Q5, Q6) do not have source sense wire bonds, thus resulting in higher Rdson values.


©2FT

FTCO


utomotive Pow

er Module

Figure 5.

10.1

1

10

100

1000

LB

I D, D

RA

IN C

UR

REN

T (A

)

V

OPERAREALIMITE

4000

Figur

2.00

40

80

120

160PULDUT

VD

I D, D

RA

IN C

UR

REN

T (A

)

Figure 9

30

10

20

30

40

50

r DS(

on),

DR

AIN

TO

SO

UR

CE

ON

-RES

ISTA

NC

E (m

Ω)

Variat

Figure

30

10

20

30

40

50

r DS(

on),

DR

AIN

TO

SO

UR

CE

ON

-RES

ISTA

NC

E (m

Ω)

Varia

Typical Characteristics (Generated using MOSFETs assembled in a TO263 package, for reference purposes only)

Figure 5.

1 10 1000.1

1

10

100

1000

LIMITEDBY PACKAGE

10us

100us

1ms

10ms I D, D

RA

IN C

UR

REN

T (A

)

VDS, DRAIN TO SOURCE VOLTAGE (V)

OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on)

SINGLE PULSETJ = MAX RATEDTC = 25oC DC

4000

Forward Bias Safe Operating Area

0.01 0.1 1 10 100 10001

10

100

500

STARTING TJ = 150oC

STARTING TJ = 25oC

I AS,

AVA

LAN

CH

E C

UR

REN

T (A

)

tAV, TIME IN AVALANCHE (ms)5000

tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)If R = 0

If R ≠ 0tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515Figure 6. Unclamped Inductive Switching

Capability

Figure 7.

2.0 2.5 3.0 3.5 4.0 4.5 5.00

40

80

120

160

TJ = -55oC

TJ = 25oC

TJ = 175oC

PULSE DURATION = 80μsDUTY CYCLE = 0.5% MAX

VDD = 5V

I D, D

RA

IN C

UR

REN

T (A

)

VGS, GATE TO SOURCE VOLTAGE (V)

Transfer Characteristics Figure 8.

0 1 2 3 40

40

80

120

160I D

, DR

AIN

CU

RR

ENT

(A)



VGS = 10VVGS = 5V

VGS = 4.5V

VGS = 3.5V

VGS = 4V

Saturation Characteristics

Figure 9.

3 4 5 6 7 8 9 100

10

20

30

40

50

r DS(

on),

DR

AIN

TO

SO

UR

CE

ON

-RES

ISTA

NC

E (m

Ω)


TJ = 25oC

TJ = 175oC


Drain to Source On-Resistance Variation vs Gate to Source Voltage

Figure 10.

-80 -40 0 40 80 120 160 2000.6

0.8

1.0

1.2

1.4

1.6

1.8

TJ, JUNCTION TEMPERATURE(oC)

NO

RM

ALI

ZED

DR

AIN

TO

SO

UR

CE

ON

-RES

ISTA

NC

E

ID = 80AVGS = 10V


Normalized Drain to Source On Resistance vs Junction Temperature


10 100

IMITEDY PACKAGE

10us

100us

1ms

10ms

DS, DRAIN TO SOURCE VOLTAGE (V)

ATION IN THIS MAY BE D BY rDS(on)



0.01 0.1 1 10 100 10001

10

100

500

STARTING TJ = 150oC

STARTING TJ = 25oC

I AS,

AVA

LAN

CH

E C

UR

REN

T (A

)





Capability

e 7.

2.5 3.0 3.5 4.0 4.5 5.0

TJ = -55oC

TJ = 25oC

TJ = 175oC

SE DURATION = 80μsY CYCLE = 0.5% MAX

D = 5V



0 1 2 3 40

40

80

120

160

I D, D

RA

IN C

UR

REN

T (A

)



VGS = 10VVGS = 5V

VGS = 4.5V

VGS = 3.5V

VGS = 4V


.

4 5 6 7 8 9 10VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 25oC

TJ = 175oC


Drain to Source On-Resistance ion vs Gate to Source Voltage

Figure 10.

-80 -40 0 40 80 120 160 2000.6

0.8

1.0

1.2

1.4

1.6

1.8


NO

RM

ALI

ZED

DR

AIN

TO

SO

UR

CE

ON

-RES

ISTA

NC

E

ID = 80AVGS = 10V



9.

4 5 6 7 8 9 10VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 25oC

TJ = 175oC


Drain to Source On-Resistance tion vs Gate to Source Voltage


FTCO


utomotive Pow

er Module

Typical Characteristics (Generated using MOSFETs assembled in a TO263 package, for reference purposes only)

Figure 5.

1 10 1000.1

1

10

100

1000

LIMITEDBY PACKAGE

10us

100us

1ms

10ms I D, D

RA

IN C

UR

REN

T (A

)


OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on)


4000


0.01 0.1 1 10 100 10001

10

100

500

STARTING TJ = 150oC

STARTING TJ = 25oC

I AS,

AVA

LAN

CH

E C

UR

REN

T (A

)





Capability

Figure 7.

2.0 2.5 3.0 3.5 4.0 4.5 5.00

40

80

120

160

TJ = -55oC

TJ = 25oC

TJ = 175oC


VDD = 5V

I D, D

RA

IN C

UR

REN

T (A

)



0 1 2 3 40

40

80

120

160

I D, D

RA

IN C

UR

REN

T (A

)



VGS = 10VVGS = 5V

VGS = 4.5V

VGS = 3.5V

VGS = 4V


Figure 9.

3 4 5 6 7 8 9 100

10

20

30

40

50

r DS(

on),

DR

AIN

TO

SO

UR

CE

ON

-RES

ISTA

NC

E (m

Ω)


TJ = 25oC

TJ = 175oC



Figure 10.

-80 -40 0 40 80 120 160 2000.6

0.8

1.0

1.2

1.4

1.6

1.8


NO

RM

AL I

ZED

DR

AIN

TO

SO

UR

CE

ON

-RES

ISTA

NC

E

ID = 80AVGS = 10V



Figure 9.

3 4 5 6 7 8 9 100

10

20

30

40

50

r DS(

on),

DR

AIN

TO

SO

UR

CE

ON

-RES

ISTA

NC

E (m

Ω)


TJ = 25oC

TJ = 175oC



Figure 11.

-80 -40 0 40 80 120 160 2000.4

0.6

0.8

1.0

1.2

NO

RM

ALI

ZED

GA

TE

THR

ESH

OLD

VO

LTA

GE


VGS = VDSID = 250μA

Normalized Gate Threshold Voltage vs Junction Temperature

Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature

-80 -40 0 40 80 120 160 2000.90

0.95

1.00

1.05

1.10

1.15

TJ, JUNCTION TEMPERATURE (oC)

NO

RM

ALI

ZED

DR

AIN

TO

SO

UR

CE

BR

EAK

DO

WN

VO

LTA

GE

ID = 250μA

Figure 13.

0.1 1 10100

1000

10000

f = 1MHzVGS = 0V

Crss

Coss

Ciss

CA

PAC

ITA

NC

E (p

F)

VDS, DRAIN TO SOURCE VOLTAGE (V)50

40000

Capacitance vs Drain to Source Voltage

Figure 14.

0 50 100 150 200 2500

2

4

6

8

10ID = 80A

VDD = 20V

VDD = 15V

VDD = 25V

V GS,

GA

TE T

O S

OU

RC

E VO

LTA

GE(

V)

Qg, GATE CHARGE(nC)

Gate Charge vs Gate to Source Voltage


FTCO


utomotive Pow

er Module

Mechanical Characteristics and Ratings

Fig. 15. Flatness Measurement Position

Package Marking and Ordering Information

Parameter ConditionLimits

UnitMin. Typ. Max.

Device Flatness Note Fig.15 0 - +200 um

Weight

Devi FTC Tube 11

1

- - g20

Mounting Torque Mounting Screw: - M3, Recommended 0.7N.m 0.6 0.7 0.8 N.m

QuantityPacking Type

ce Marking MOSFETPCF33478O3V455A1


FTCO


utomotive Pow

er Module

Detailed Package Outline Drawings

Figure 16.

VBAT

SEN

SE

GAT

E LS

U

GA

TE

HS

U

PH

AS

E U

SE

NS

E

GAT

E H

S V

PH

AS

E V

SE

NS

E

GA

TE

LS

V

TE

MP

2

TEM

P 1

GAT

E LS

W

GA

TE

HS

W

PH

AS

E W

SE

NS

E

SHUN

T N

SH

UN

T P

VBAT GND PHASE U PHASE V PHASE W


FTCO


utomotive Pow

er Module

Detailed Package Outline Drawings

Figure 17.

TRADEMARKSThe following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is notintended to be an exhaustive list of all such trademarks.

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVERELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANYPRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTYTHEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THEEXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used here in:1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body or (b) support or sustain life,and (c) whose failure to perform when properly used in accordance withinstructions for use provided in the labeling, can be reasonablyexpected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, orsystem whose failure to perform can be reasonably expected to causethe failure of the life support device or system, or to affect its safety oreffectiveness.

PRODUCT STATUS DEFINITIONSDefinition of Terms

2Cool™AccuPower™AX-CAP™*BitSiC®

Build it Now™CorePLUS™CorePOWER™CROSSVOLT™CTL™Current Transfer Logic™DEUXPEED®

Dual Cool™EcoSPARK®

EfficentMax™ESBC™

Fairchild®

Fairchild Semiconductor®FACT Quiet Series™FACT®

FAST®

FastvCore™FETBench™FlashWriter® *FPS™

F-PFS™FRFET®

Global Power ResourceSM

Green Bridge™Green FPS™Green FPS™ e-Series™Gmax™GTO™IntelliMAX™ISOPLANAR™Marking Small Speakers Sound Louderand Better™MegaBuck™MICROCOUPLER™MicroFET™MicroPak™MicroPak2™MillerDrive™MotionMax™Motion-SPM™mWSaver™OptoHiT™OPTOLOGIC®

OPTOPLANAR®

PowerTrench®

PowerXS™Programmable Active Droop™QFET®

QS™Quiet Series™RapidConfigure™

Saving our world, 1mW/W/kW at a time™SignalWise™SmartMax™SMART START™Solutions for Your Success™SPM®

STEALTH™SuperFET®

SuperSOT™-3SuperSOT™-6SuperSOT™-8SupreMOS®

SyncFET™Sync-Lock™

®*

The Power Franchise®

®

TinyBoost™TinyBuck™TinyCalc™TinyLogic®

TINYOPTO™TinyPower™TinyPWM™TinyWire™TranSiC®

TriFault Detect™TRUECURRENT®*μSerDes™

UHC®

Ultra FRFET™UniFET™VCX™VisualMax™VoltagePlus™XS™

®

™

tm

Datasheet Identification Product Status Definition

Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary First ProductionDatasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

ANTI-COUNTERFEITING POLICYFairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,www.Fairchildsemi.com, under Sales Support.Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of theirparts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failedapplication, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from theproliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized FairchildDistributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized FairchildDistributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range ofup-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address andwarranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild iscommitted to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

Rev. I61

tm®

Documents

3-Phase Inverter Automotive Power Module - RS …docs-europe.electrocomponents.com/webdocs/13a1/0900766b813a1e3… · Auto SPM ©2013 Fairchild Semiconductor Corporation 1 FTCO3V455A1