Nano Tech Co., Ltd.

3

CONTENTS

3-4. EXPOSURE FLOW SEQ.3-4-1. ALIGN TREE3-4-2. ALIGNMENT CROECTION3-4-3. SHOT & EXPOSURE AREA3-4-4. EXPOSURE TIME3-4-5. EXPOSURE TECHNOLOGY SYSTEM3-4-5-1. OFF AXIS ILLUMINATION3-4-5-2. PSM3-4-5-3. OPC3-4-5-4. NA3-4-5-5. CHOERENCE3-4-5-6. RESOLUTION & D.O.F3-4-5-7. ABERRATION3-4-5-8. DEVICE SHOT

3-1. PHOTO FLOW SEQ.

3-2. COATER FLOW SEQ.3-2-1. HMDS3-2-2. PR COATING CYCLE3-2-3. PR UNIFORMITY PARA.3-2-4. PR TARGET 3-2-5. PR SOLVENT

3-3. DEVELOPER FLOW SEQ.3-3-1. DEVELOPER PARAMETER(1)3-3-2. DEVELOPER PARAMETER(2)

Nano Tech Co., Ltd.

3-1 PHOTO FLOW SEQ.(1) - FLOW SEQ.

PHOTOWafer Pattern Design Reticle

.

Wafer

Film

Film

Wafer

Film

Photoresist

Wafer

Film

Photoresist

hv

Reticle

Wafer

Film

Wafer

Gas

Exposure EnergyFocus / AlignLens Distortion

Pattern Size ControlPattern Profile ControlLayer Align Control

Photo

JOB FACTOR

Nano Tech Co., Ltd.

3-1 PHOTO FLOW SEQ.(2) - FLOW SEQ.

HMDS Cooling1 PR Soft Bake Cooling2

Hard Bake P.E.B

CD

Align

DepositionCOATER

EXPOSURE

DEVELOPER

TRACKPR IN-LINE

Cooling

BARC TARCBAKE

Nano Tech Co., Ltd.

3-2 COATER FLOW SEQ. - TRACK

HMDS Wafer PR SUB . N2 Vapor Plate 130

Cooling1Baking Wafer Wafer .

PR 21~23/60"

PR

Soft Bake

Cooling2

PR Nozzle Spin Motor RPM PR .Wafer Edge Back PR Thinner Top/BackRinse . Cooling, Pr, , .

PR Solvent , Stress . Tg (80), Solvent B.P(150), PAC (130) .(90/120", B.P 150 Solvent )

S/B Wafer Scale Align Wafer .(In-line )

Nano Tech Co., Ltd.

3-2-1 HMDS - TRACK

ADHESIONWafer Sub Photoresist Sub HMDS

(Hexa Methylene DiSilazane) Chemical

Hydrophilic Surface

Sub Strate

Si Si Si Si

O O O O

(H3C)3Si (H3C)3Si (H3C)3Si (H3C)3Si

T -n NH3

Hydrophobic Surface

Low Contact Angle

High Contact Angle

Sub Strate

Si Si Si Si

OH OH OH OH

(H3C)3Si Si(CH3)#

NH

(H3C)3Si Si(CH3)#

NH

BubblingN2

N2HMDSIN

HMDSOUT

~ ~

N2 + HMDS

Bubbling System

HMDS Liquid N2 Bubbling Sys. ,Vapor Chamber .

Nano Tech Co., Ltd.

3-2-2 PR COATING CYCLE - TRACK

WAFER SPIN CHUCK WAFER

RESIST DISPENSE SPIN CHUCK .

2

3

1

t2

t1 t3

t4

SPIN SPEED

TIME

RESISTDISPENSING

EDGE BEADREMOVING

RESIST CYCLE

r1

r2 r3

r4

r5

t1 RESIST DISPENSE

r2 t2

2

RESIST SOLVENT

RESIST .

3 t3 EDGE

BEAD SOLVENT

DISPENSE SOLVENT

t4

r5 SLOPE .

t1 : RESIST DISPENSE TIME

t2 : HIGH RPM( )

t3 : SIDE/BACK RINSE TIME

t4 : SOLVENT DRY TIME

t = rpm

kSt : RESIST

S : RESIST

(%)

k : SPIN COATER

Nano Tech Co., Ltd.

3-2-3 PR UNIFORMITY PARAMETER - TRACK

ParameterPR PR (CP) High RPM

Uniformity WF .

Parameter

Cooling

PR

Exhaust

Chamber

Motor Flange

Center Edge

Chamber

Chuck

WF WF Coating

Resist vs WF

0

20

40

60

80

22 23 24 25 26Resist ()

PR

(

)

Cooling vs WF

0

20

40

60

80

100

120

21 22 23 24 25 26Cooling ()

PR

(

)

Nano Tech Co., Ltd.

3-2-4 PR TARGET - TRACK

PR Target .PR Target

S/W Curve , Target PR CD

.( )Standing Wave

CD Balance

Etch Selectivity

Resolution

Etching (Metal) PR .

I/I Dose

Sub Shot Monitoring CD Unbalance

.

High Dose Energy Masking Area

PR .

.

Energy

PR .

Nano Tech Co., Ltd.

3-2-5 PR SOLVENT - TRACK

RESIST 80% SOLVENT SOLVENT RESIST .

SOLVENT vs BAKE RESIST BAKE vs RESIST

SOLVENT

SOFT BAKE

SOLVENT

BEFORESOFT BAKE

AFTERSOFT BAKE

SUBSTRATE RESIST FILM LOSS RESIST

THICKNESS

SOFT BAKE

125~130

SOLVENT BAKE

SPINNING SOLVENT RESIST .SOFTBAKE SOLVENT RESIST .

SOLVENT RESIST .Tg RESISTSENSITIZER PLASICFLOW RESIST .

GLASS TRANSITIONTEMPERATURE

Nano Tech Co., Ltd.

3-3 DEVELOPER FLOW - TRACK

P.E.BPost Exposure Bake ProfileStanding Wave .

Standing Wave PR PAC Profile

Wave , PAC

Diffusion Profile .

PAC (130),S/B 20 110~120/120"

CoolingBaking Wafer . 23/60"

Hard BakePR Imide, Solvent Water . PAC (130) 110~120/120"

(2.38% TMAH) Nozzle Wafer DI(Diionized Water) Top/Back .( 23)

Bake

Nano Tech Co., Ltd.

3-3-1 DEVELOP PARAMETER(1) - TRACK

vs PR vs PROFILE vs

()

(sec)

PROFILE

50 6040

90

70

(sec)

Tpr

(sec)

E4E3

E2

E1

E1 < E2 < E3 < E4

PR DRM(DEVELOPMENT RATE MOTORING) .

RESIST PATTERN SCUM PROFILE PATTERN PROFILE . .

RESIST . PATTERNSIZE .

0

Nano Tech Co., Ltd.

3-3-2 DEVELOP PARAMETER(2) - TRACK

vs CONTRAST

NORMALIZDTpr

CONTRAST . RSIST PATTERN MICROPORE .

vs

DEVELOPRATE

TEMPERTURE

. SPRAY NOZZLE . CONTROL .

ABC

: A < B < CCONTRAST : C < B < CE/E : C < B < C

Nano Tech Co., Ltd.

3-4 EXPOSURE FLOW - EXPOSURE

Meca Pre Align TV Pre Align AGA Exposure

1 Shot

Mecanical Sensor Flatzone Align40um

Wafer Stage Wafer 2Key

12um

Advance Global Align ALignLaser 0.06um

Step & Repeat or Scan (Blade)

Leveling

Nano Tech Co., Ltd.

3-4-1 ALIGN TREE - EXPOSURE

Align TreeDEVICE CRITICAL

LOCOS

FG

I/I

SCNT

METAL1CONT TC

TG

PAD

SC1

UG

SCT1

SCT2

SG SC2

METAL2 UC

METAL3

MP

64M SD(D)

Nano Tech Co., Ltd.

ALIGNMENT CORRECTION3-4-2 - EXPOSURE

1

2

4

3

5

6

8

7

9

10

12

11

13

14

16

15

17

18

20

19

x

y

Reapting Size : Rx, Ry

OFFSETX

Y Y(n) AVG.

X(n) AVG.

SCALE

X-SCALE

Y-SCALE

X(13) - X(5)

(Rx * COLUM) * 10

Y(1) - Y(17)

(Ry * ROW) * 10

CHIP

ROTATION

(RETICLE)

CENTER SHOT Y(12) - Y(9)

Rx * 10 = A

X(10) - X(9)

Ry * 10 = B

(A+B) / 2 Tan = (Y12-Y9) / Rx

Rx

Y12-Y9

CHIP

MAG.

Y(12) - Y(9)

Ry * 10 = A

X(10) - X(9)

Rx * 10 = B

(A+B) / 2

CHIP

ROTATION

WAFER

ROTATION

X-Rot

Y-Rot

Y(13) - Y(5)

(Rx * COLUM)

X(1) - X(17)

(Ry * ROW)

ORTHOGONALITY (YRot - XRot)

Alignment Correction

WF 5Shot 20EA

Law Data

.

* 10

* 10

Nano Tech Co., Ltd.

3-4-3 SHOT & EXPOSURE AREA - EXPOSURE

Shot Shot Factor Device size, Field size, Reticle size, Reduction Lens Mag.

scribe line Cr

Reticle Design

Align KeyTeg

Monitoring Pad

ReticleAling key

CrGuard Ring

chip chip

chipchip

1 2

3 4

Shot / Scribe line Scribe line Pattern Pattren Cr Design 1 .

Guard Ring Blade .(5mm )

SHOT

Nano Tech Co., Ltd.

3-4-4 EXPOSURE TIME - EXPOSURE

Stepper Scanner

DUV

Exposure Time = Dose / Intensity(800W)

DUV

Exposure Time = Shutter Open TimeIntensity Lamp

Intensity Exposure Time

Pulse Control

1 Pulse Exposure Time

I-LINE

Scan Length Scan Speed ,Pulse Exposure Time

Scan Speed & Lenght & Pulse Control

LASER 10W / 1000Hz (1000Hz=1000Pulse/1sec)Setting 450mj / 1SEC ) 0.45mj/1Pulse

Exposure Time = DOSE / (0.45mj/1Pulse) / 1000Hz

Exposure Time(Scan Time)

= (Scan Lenght * DOSE)

/ (Intensity * Slit)

LASER 10W / 1000Hz 1000Hz=1000Pulse/1secSetting 450mj / 1SEC ) 0.45mj/1Pulse

Scan Speed = (Intensity x Slit) / DoseScan Time = Scan Length / Scan Speed

Nano Tech Co., Ltd.

3-4-5 EXPOSURE TECHNOLOGY SYSTEM - EXPOSURE

Off-Axis Illumination

Conventional Annular Quadrupol IlluminationApperture

Condenser Lens

Mask

Projection Lens

WaferWafer Stage

Aperture(Pupil)

Wavelength(g/i/KrF/ArF)

FLEX

NA/ OptimizationHigh Resolution MatrialResist Process Technoligy

Phase Shift Mask/OPC

Multiple Exposure

Orders

Mask

Phase 0 180 0 180 0 180 OPC* d=/2(n-1)

Nano Tech Co., Ltd.

3-4-5-1 OFF AXIS ILLUMINATION(1) -EXPOSURE-Technology

Aperture close Open . -1, 0, +1 -1 Apeture .0 & +1(or 0 & -1) Image . Define . Focus Margin , NA 2 .

Aperture

Mask

-1 +10

NAlens

Wafer

LensSin = n / Pn : 0, 1, 2..P : Pitch Size:

Conventional

Aperture

Mask

-1 +1

0NAlens

Wafer

Lens

Nano Tech Co., Ltd.