2N3553 el señor transistor 2N3553 (500Mhz 7W)

8/14/2019 2N3553 el seor transistor 2N3553 (500Mhz 7W)

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DATA SHEET

Product specification

Supersedes data of October 1981

File under Discrete Semiconductors, SC08a

1995 Oct 27

DISCRETE SEMICONDUCTORS

2N3553Silicon planar epitaxialoverlay transistor


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Philips Semiconductors Product specification

Silicon planar epitaxial

overlay transistor 2N3553

APPLICATIONS

The 2N3553 is intended for use in VHF and UHF

transmitting applications.

DESCRIPTION

The device is a silicon NPN overlay transistor in a TO-39

metal package with the collector connected to the case.

PINNING - TO-39/3

PIN DESCRIPTION

1 emitter

2 base

3 collector

Fig.1 Simplified outline.

handbook, halfpage

MBB199

1

2

3

QUICK REFERENCE DATA

RF performance

SYMBOL PARAMETER CONDITIONS MAX. UNIT

VCEX collector-emitter voltage IC 200 mA; VBE =1.5 V 65 V

VCEO collector-emitter voltage open base; IC 200 mA 40 V

ICM peak collector current 1.0 A

Ptot total power dissipation up to Tmb = 25C 7.0 W

Tj junction temperature 200 C

fT transition frequency IC = 125 mA; VCE = 28 V 500

f

(MHz)

VCE(V)

Po(W)

Gp(dB)

(%)

175 28 2.5 >10 >50

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.


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overlay transistor2N3553

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter 65 V

VCEX collector-emitter voltage IC 200 mA; VBE =1.5 V 65 V

VCEO collector-emitter voltage open base; IC 200 mA 40 V

VEBO emitter-base voltage open collector 4 V

IC collector current (DC) 0.35 A

ICM peak collector current 1 A

Ptot total power dissipation up to Tmb = 25C 7 W

Tstg storage temperature 65 +200 CTj junction temperature 200 C

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

Rth j-mb thermal resistance from junction to mounting base 25 K/W

Fig.2 DC SOAR.

(1) All frequencies, including DC.

(2) f 1 MHz.

(3) Allowed during switching off, provided the transistor is cut-offwith VBB 1.5 V; RBE 33; IC 200 mA and the transientenergy 0.5 mW.

handbook, halfpage

MGC928

10

1

10

102110-2

10-1

VCE(V)

IC(A)

(1)

(2)

(3)

Fig.3 Power derating curve.

handbook, halfpage

0

10

Ptot(W)

5

0100 200

Tmb(oC)

MGC927


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CHARACTERISTICS

Tj = 25C unless otherwise specified.

Note

1. Pulsed through an inductor of 25 mH; = 0.5; f = 50 Hz.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V(BR)CBO collector-base breakdown voltage open emitter; IC = 0.25 mA 65 V

V(BR)CEO collector-emitter breakdown voltage open base; ICup to 200 mA;

note 1

40 V

V(BR)CEX collector-emitter breakdown voltage ICup to 200 mA; VBE =1.5 V;

RB = 33; note 1

65 V

V(BR)EBO emitter-base breakdown voltage open collector; IE = 0.25 mA 4 V

VBE base-emitter voltage IC = 250 mA; VCE = 5 V 1.5 V

VCEsat collector-emitter saturation voltage IC = 250 mA; IB = 50 mA 1.0 V

ICEO collector leakage current open base; VCE = 3 0 V 0.1 mA

hFE DC current gain VCE = 5 V; IC = 125 mA 15 200

VCE = 5 V; IC = 250 mA 10 100

fT transition frequency IC = 125 mA; VCE = 28 V 500 MHz

Rhoie) real part of input impedance IC = 125 mA; VCE = 28 V;

f = 200 MHz

20

Cc collector capacitance VCB = 28 V; IE = ie = 0;

f = 1 M H z

10 pF

Fig.4 DC current gain as a function of collector

current; typical values.

handbook, halfpage

0 100 200 300 400

hFE

60

20

0

40

MGC935

500IC(mA)

Fig.5 Collector capacitance as a function of

collector-base voltage; typical values.

handbook, halfpage

0

5

20

15

10

0 20 40 60

(pF)

Cc

VCB(V)

MGC930


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APPLICATION INFORMATION

RF performance at Tmb = 25C.

Ruggedness

The transistor is capable of withstanding a load mismatch corresponding to VSWR = 3 : 1 varied through all phases,

under the conditions: VCE = 28 V; f = 175 MHz; Tmb = 25C; Po = 2.5 W.

f

(MHz)

VCE(V)

Po(W)

Gp(dB)

(%)

175 28 2.5 >10 >50

(1) The length of the external emitter wire is 1.6 mm.

Fig.6 Test circuit at 175 MHz.

handbook, full pagewidth

C1input

50

output50

L1

C2

C5

C3C4

MGC926L2

L4

L3

DUT

+VCC

(1)


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List of components (see Fig.6)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.

C1, C2, C3, C4 air trimmer capacitor 4 to 29 pF

C5 polyester capacitor 10 nF

L1 1 turn 1.0 mm copper wire int. diameter 10 mm;

leads 2 10 mm

L2 Ferroxcube choke coil Z = 550 20%;

f = 175 MHz

4312 020 36640

L3 15 turns enamelled 0.7 mm

copper wire

int. diameter 4 mm;

closely wound

L4 3 turns enamelled 1.5 mm

copper wire

int. diameter 12 mm;

leads 2 20 mm;closely wound

Fig.7 Transition frequency as a function of

collector current; typical values.

Tj = 25C.

(1) VCE = 28 V.

(2) VCE = 14 V.

(3) VCE = 7 V .

handbook, halfpage

0

600

fT(MHz)

400

(2)(3)

200100 200 300 400

IC(mA)

MGC937

(1)

Fig.8 Output power as a function of frequency;

typical values.

VCE = 28 V; Tmb = 25C.

(1) Pi = 0.5 W.

(2) Pi = 0.375 W.

(3) Pi = 0.25 W.

(4) Pi = 0.1 W.

(5) Pi = 0.05 W.

handbook, halfpage

0

10

Po(W)

5

(1)

(2)

(3)

(4)

(5)

0200100 400300

f(MHz)

MGC929


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PACKAGE OUTLINE

handbook, full pagewidth

45o

0.86max

1.0max

5.08

9.4 max

1

2

3

8.5max

6.6max

12.7 min

0.51max

MSA241

Fig.9 TO-39.

Dimensions in mm.


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DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the specification

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application informationWhere application information is given, it is advisory and does not form part of the specification.


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2N3553 el señor transistor 2N3553 (500Mhz 7W)